Dual-laser synchronous coaxial modification stripping device and dual-laser synchronous coaxial modification stripping method

Abstract

The invention relates to the technical field of wafer laser cutting, and provides a dual-laser synchronous coaxial modified stripping device and a dual-laser synchronous coaxial modified stripping method.The dual-laser synchronous coaxial modified stripping device comprises a mobile platform, a first pulse laser system, a second pulse laser system and a pulse delay regulation and control system; the moving platform can move the to-be-stripped part along a plurality of different directions; the first pulse laser system emits ultrashort pulse laser to the to-be-stripped part through a first light path, so that an initial modified layer is formed in the to-be-stripped part; the second pulse laser system synchronously emits continuous laser to the to-be-stripped part through a second light path, so that the initial modified layer is heated to form a cracked complete modified layer; the pulse delay regulation and control system is arranged in the first light path and used for regulating and controlling the pulse delay of the first pulse laser system. The latter can be suitable for the former, the stripping efficiency of the semiconductor crystal ingot can be improved, and quality stripping is improved.

Description

Technical Field

[0001] The present disclosure relates to the technical field of wafer laser cutting, and in particular to a dual-laser synchronous coaxial modification and stripping device and a dual-laser synchronous coaxial modification and stripping method. Background Art

[0002] The third generation of semiconductor materials represented by wide bandgap compound semiconductors such as silicon carbide, diamond, and gallium carbide have complex growth processes and high material hardness, which increases the difficulty of semiconductor wafer processing and hinders the application of semiconductor devices. Taking silicon carbide ingots as an example, the main stripping method is diamond wire saw cutting, but this method belongs to contact wire cutting, and there are cutting quality problems, such as wire breakage, ingot cracking, residual stress inside the ingot, and blade loss. Eliminating these defects requires expensive subsequent processes, such as grinding, mechanical polishing, and chemical polishing. It can be seen that traditional stripping methods are no longer sufficient to meet the market demand for silicon carbide wafers.

[0003] With the continuous development of laser processing technology, researchers have explored the use of lasers to modify the interior of silicon carbide ingots. After laser modification, the silicon carbide ingots can be stripped through cold cracking, mechanical stripping, and chemical etching. However, the existing stripping process requires processes such as gluing and debonding, which limits the stripping efficiency of the silicon carbide ingots.

[0004] In view of this, a new laser modification and stripping method is urgently needed in the market to improve the quality and efficiency of laser modification and stripping of semiconductors such as silicon carbide. Summary of the invention

[0005] The disclosed embodiments provide a dual-laser synchronous coaxial modification and stripping device and a dual-laser synchronous coaxial modification and stripping method, in order to solve the problems of complex stripping process and low stripping efficiency in laser modification and stripping of semiconductor ingots in the prior art.

[0006] The dual-laser synchronous coaxial reforming and stripping device provided in the embodiment of the present disclosure includes a mobile platform, a first pulse laser system, a second pulse laser system and a pulse delay control system; The moving platform can move the piece to be peeled along multiple different directions; The first pulse laser system emits an ultrashort pulse laser to the object to be peeled through a first optical path, so as to form an initial modified layer inside the object to be peeled; The second pulse laser system synchronously emits continuous laser light to the to-be-stripped piece through a second optical path, so that the initial modified layer is heated to form a cracked fully modified layer; The pulse delay control system is arranged in the first optical path, and is used to control the pulse delay of the first pulse laser system.

[0007] In one possible implementation manner, a beam splitter is provided in the front section of the first optical path, and a beam combiner is provided in the rear section of the first optical path; The beam splitter is used to split the first optical path into a first sub-optical path and a second sub-optical path, and the beam combiner is used to combine the first sub-optical path and the second sub-optical path into the first optical path; The pulse delay control system is arranged in the second sub-optical path, and is capable of adjusting the optical path difference between the second sub-optical path and the first sub-optical path, thereby generating a pulse delay with the first sub-optical path.

[0008] In one possible implementation, the pulse delay control system includes a plurality of reflectors arranged in the second light sub-path; A half-wave plate and a polarizing plate for regulating the energy of the ultrashort pulse laser are respectively arranged in the first sub-optical path and in the second sub-optical path at the front end of the pulse delay regulation system.

[0009] In one possible implementation manner, a second reflector for adjusting the direction of the light path and a second beam combiner for combining the light with the first light path are respectively provided in the second light path.

[0010] In one possible implementation manner, the dual-laser synchronous coaxial modification and stripping device further includes a beam focusing system; The beam focusing system comprises a focusing objective lens arranged above the moving platform; The focusing objective lens is used to focus the ultrashort pulse laser and the continuous laser together on the layer to be peeled off inside the object to be peeled off.

[0011] In one embodiment, the first pulse laser system includes one or more of a picosecond laser, a nanosecond laser, and a femtosecond laser.

[0012] In one possible implementation, the mobile platform includes an X-axis mobile sub-platform, a Y-axis mobile sub-platform, and a Z-axis mobile sub-platform.

[0013] In one possible implementation, the first pulse laser system can adjust and output different laser parameters according to the material properties of the to-be-peeled piece and the position of the to-be-peeled layer; The laser parameters include one or more of laser wavelength, single pulse energy, pulse width and focused spot size.

[0014] In addition, the embodiment of the present disclosure also provides a dual-laser synchronous coaxial modification and stripping method, which can be applied to the dual-laser synchronous coaxial modification and stripping device mentioned above, and includes: The first step is to determine the layer to be peeled off in the object to be peeled off; The first step is to emit an ultrashort pulse laser to the layer to be peeled off so that the layer to be peeled off forms an initial modified layer; The second step is to emit a continuous laser to the initial modified layer to heat the initial modified layer to form a cracked complete modified layer; The second step and the third step are performed simultaneously, or the second step and the third step are performed sequentially.

[0015] In one possible implementation, emitting continuous laser light to the initial modified layer includes: focusing the ultrashort pulse laser light on the layer to be peeled off, and performing scanning processing on the layer to be peeled off; The emitting of continuous laser light to the initial modified layer comprises: focusing the continuous laser light on the initial modified layer, and performing synchronous coaxial scanning processing on the initial modified layer; The scanning interval and scanning speed of the scanning process can be adjusted. Compared with the prior art, the technical solution provided by the embodiments of the present disclosure has the following advantages: The dual-laser synchronous coaxial modification and stripping device provided in the embodiment of the present disclosure can focus the ultrashort pulse laser on the layer to be stripped and scan and emit it, so that the ultrashort pulse laser can cause the silicon carbide ingot in the layer to be stripped to undergo a crystal transformation and a chain breaking reaction, and the single-crystal silicon carbide is transformed into amorphous silicon and amorphous carbon, thereby forming an initial modified layer with a certain thickness and certain microcracks; and then synchronously emit a continuous laser to the initial modified layer in the piece to be stripped through the second pulse laser system, the continuous laser heats the initial modified layer, and the initial modified layer absorbs the laser energy and the temperature rises and tensile stress is generated, so that the microcracks are uniformly distributed along the initial modified layer. The uniform expansion of the cracks results in a completely modified layer covered with microcracks, which completely cracks the interior of the silicon carbide ingot to be peeled off, omitting the bonding and debonding processes required for the peeling process. The ultrashort pulse laser and continuous laser work together efficiently, significantly reducing the time of modification and peeling, and improving the peeling efficiency of the silicon carbide ingot. The synchronously occurring initial modified layer and the completely modified layer of crack expansion can make the stress concentration of the silicon carbide ingot more uniform, and promote the stable expansion of cracks along the initial modified layer, thereby achieving higher quality peeling and lowering the surface roughness of the silicon carbide wafer finally peeled off, which is helpful for subsequent wafer grinding and polishing.

[0016] In addition, the dual-laser synchronous coaxial modification and stripping method provided in the embodiment of the present disclosure can be applied to the above-mentioned dual-laser synchronous coaxial modification and stripping device, and can achieve the same beneficial effects.

[0017] It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present disclosure, nor is it intended to limit the scope of the present disclosure. Other features of the present disclosure will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above and other objects, features and advantages of the exemplary embodiments of the present disclosure will become readily understood by reading the detailed description below with reference to the accompanying drawings. In the accompanying drawings, several embodiments of the present disclosure are shown in an exemplary and non-limiting manner, in which: In the drawings, the same or corresponding reference numerals represent the same or corresponding parts.

[0019] Figure 1 A schematic diagram of a dual-laser synchronous coaxial reforming and stripping device provided in an embodiment of the present disclosure is shown; Figure 2 A flow chart of a dual-laser synchronous coaxial modification and stripping method provided in an embodiment of the present disclosure is shown.

[0020] Explanation of the reference numerals in the figure: 1, first pulse laser system; 11, pulse delay control system; 111, reflector; 101, beam splitter; 102, beam combiner; 103, half-wave plate; 104, polarizer; 2. second pulse laser system; 21. second reflector; 22. second beam combiner; 3. Mobile platform; 4. Beam focusing system. DETAILED DESCRIPTION

[0021] In order to make the purpose, features, and advantages of the present disclosure more obvious and easy to understand, the technical solutions in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present disclosure.

[0022] The embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings.

[0023] Combination Figure 1 and Figure 2 As shown, an embodiment of the present disclosure provides a dual-laser synchronous coaxial modification and stripping device, which includes a moving platform 3, a first pulse laser system 1, a second pulse laser system 2 and a pulse delay control system 11; the moving platform 3 can move the piece to be stripped along multiple different directions; the first pulse laser system 1 emits an ultrashort pulse laser to the piece to be stripped through a first optical path, so that an initial modified layer is formed inside the piece to be stripped; the second pulse laser system 2 synchronously emits a continuous laser to the piece to be stripped through a second optical path, so that the initial modified layer is heated to form a cracked complete modified layer; the pulse delay control system 11 is arranged in the first optical path, and is used to control the pulse delay of the first pulse laser system 1.

[0024] The dual-laser synchronous coaxial modification and stripping device can be applied to the laser stripping of silicon carbide, diamond, gallium carbide and other ingots. The use process is specifically described using silicon carbide ingot as an example.

[0025] When the dual-laser synchronous coaxial modification and stripping device is actually used, the layer to be stripped inside the silicon carbide ingot to be stripped is first determined, and then an ultrashort pulse laser is emitted to the layer to be stripped inside the silicon carbide ingot through the first pulse laser system 1. Specifically, the ultrashort pulse laser can be focused on the layer to be stripped and scanned and emitted, so that the ultrashort pulse laser can cause the silicon carbide ingot in the layer to be stripped to undergo a crystal transformation and a chain breaking reaction, and the single-crystal silicon carbide is transformed into amorphous silicon and amorphous carbon, thereby forming an initial modified layer with a certain thickness and certain microcracks; and then a continuous laser is synchronously emitted to the initial modified layer in the piece to be stripped through the second pulse laser system 2, and the continuous laser heats the initial modified layer. After the initial modified layer absorbs the laser energy, the temperature rises and tensile stress is generated, so that the microcracks are uniformly extended along the initial modified layer, and a completely modified layer covered with microcracks is obtained, so that the inside of the silicon carbide ingot to be stripped is completely cracked, so that the direct separation of the wafer can be achieved.

[0026] Compared with the prior art method of laser modification and then cold cracking to peel off the silicon carbide ingot, the dual laser synchronous coaxial modification and stripping device provided in the embodiment of the present invention omits the processes such as gluing and debonding required in the stripping process, and the ultrashort pulse laser and continuous laser work together efficiently, which significantly reduces the modification and stripping time and improves the stripping efficiency of the silicon carbide ingot. The synchronous initial modified layer and the complete modified layer of crack extension can make the stress concentration of the silicon carbide ingot more uniform, promote the stable expansion of the crack along the initial modified layer, thereby achieving higher quality stripping and making the surface roughness of the silicon carbide wafer finally stripped lower, which is helpful for subsequent wafer grinding and polishing.

[0027] In addition, the dual-laser synchronous coaxial modification and stripping device provided in the embodiment of the present disclosure, wherein the pulse delay control system 11 can also adjust the pulse delay of the ultrashort pulse laser accordingly, thereby significantly increasing the number of excited electrons under the same energy and the interaction time between the excited electrons and photons inside the silicon carbide ingot to be stripped; wherein the moving platform 3 can move the silicon carbide ingot to be stripped in multiple different directions, thereby realizing efficient and precise stripping of different parts and different layers of the silicon carbide ingot by scanning.

[0028] In one embodiment, a beam splitter 101 is provided in the front section of the first optical path, and a beam combiner 102 is provided in the rear section of the first optical path; the beam splitter 101 is used to divide the first optical path into a first sub-optical path and a second sub-optical path, and the beam combiner 102 is used to combine the first sub-optical path and the second sub-optical path into the first optical path; the pulse delay control system 11 is provided in the second sub-optical path, and can control the optical path difference between the second sub-optical path and the first sub-optical path, thereby generating a pulse delay with the first sub-optical path.

[0029] Specific, combined Figure 1 To further explain in detail, a beam splitter 101 is provided in the front section of the first optical path, and the beam splitter 101 is used to divide the first optical path into a first sub-optical path and a second sub-optical path, and the pulse delay control system 11 is provided in the second sub-optical path, and can correspondingly control the optical path difference between the second sub-optical path and the first sub-optical path based on the Michelson interferometer principle, thereby controlling the pulse delay between the first sub-optical path and the second sub-optical path, so as to achieve the beneficial effect of significantly increasing the number of excited electrons at the same energy and the interaction between the excited electrons and photons inside the silicon carbide ingot to be stripped.

[0030] Moreover, a beam combiner 102 is provided in the rear section of the first optical path, and the beam combiner 102 can effectively combine the first sub-optical path and the second sub-optical path with optical path difference into the first optical path again, and emit them together into the to-be-stripped layer in the to-be-stripped silicon carbide ingot.

[0031] In one embodiment, the pulse delay control system 11 includes a plurality of reflectors 111 arranged in the second sub-optical path; a half-wave plate 103 and a polarizer 104 for controlling the ultrashort pulse laser energy are respectively arranged in the first sub-optical path and at the front end of the pulse delay control system 11 in the second sub-optical path.

[0032] Specific, combined Figure 1 To further explain in detail, at this time, the pulse delay control system 11 is configured as four reflectors 111 located in the second sub-optical path. The four reflectors 111 perform total reflection reversal on the second sub-optical path in turn, thereby forming an optical path difference between the second sub-optical path and the first sub-optical path.

[0033] Of course, the pulse delay control system 11 can be provided with a greater or lesser number of reflectors 111 to achieve the function of changing the optical path difference between the second sub-optical path and the first sub-optical path.

[0034] In addition, a half-wave plate 103 and a polarizer 104 for regulating the energy of the ultrashort pulse laser are respectively provided in the first sub-optical path and at the front end of the pulse delay control system 11 of the second sub-optical path. The half-wave plate 103 and the polarizer 104 can regulate the pulse energy, so that the first pulse laser system 1 can emit ultrashort pulse lasers with different pulse energies to adapt to the ingots to be peeled with different material properties.

[0035] Specifically, the parameters of the first pulse laser system 1 are output wavelength 1035nm, pulse width 220fs-100ns adjustable, output power 9W, repetition frequency 500kHz, laser output spot diameter 2μm, and the pulse delay control system 11 has a control pulse delay of 2ps; the parameters of the second pulse laser system 2 are output wavelength 1035nm, output power 200W, and laser output spot diameter 200μm.

[0036] The specific configuration of the pulse delay control system 11 has the beneficial effects of simple structure and being able to effectively change the optical path difference between the second sub-optical path and the first sub-optical path.

[0037] In one embodiment, a second reflector 21 for adjusting the direction of the light path and a second beam combiner 22 for combining the light with the first light path are respectively provided in the second light path.

[0038] Specific, combined Figure 1 To further explain in detail, at this time, three second reflectors 21 for adjusting the direction of the light path are respectively provided in the second light path to guide the light of the second light path to the processing platform, thereby saving space.

[0039] Moreover, a second beam combiner 22 for combining with the first optical path is provided in the second optical path, so that the ultrashort pulse laser in the first optical path and the continuous laser in the second optical path can be combined into one through the second beam combiner 22, coaxially arranged, and emitted together to the layer to be stripped in the silicon carbide ingot to be stripped, which helps to optimize the initial modified layer and the crack propagation process. Secondly, it can also better control the thermal distribution of the ultrashort pulse laser and the continuous laser, effectively control the expansion of microcracks in the plane of the initial modified layer, and improve the stripping efficiency.

[0040] In one embodiment, the dual-laser synchronous coaxial modification and stripping device also includes a beam focusing system 4; the beam focusing system 4 includes a focusing objective lens arranged above the movable platform 3; the focusing objective lens is used to focus the ultrashort pulse laser and the continuous laser together on the layer to be stripped inside the object to be stripped.

[0041] Specific, combined Figure 1 To further explain in detail, the beam focusing system 4 can be fixedly arranged above the moving platform 3, so that through the relative movement of the moving platform 3 and the silicon carbide ingot to be peeled off, the beam focusing system 4 can focus the ultrashort pulse laser and the continuous laser on the layer to be peeled off inside the piece to be peeled off, and scan and move the layer to be peeled off.

[0042] In one embodiment, the first pulse laser system 1 includes one or more of a picosecond laser, a nanosecond laser, and a femtosecond laser.

[0043] Picosecond lasers, nanosecond lasers and femtosecond lasers can all emit ultrashort pulse lasers stably and effectively, and when the first pulse laser system 1 is specifically configured to be a plurality of them, it can be flexibly selected when irradiating and stripping semiconductor ingots of different materials to be stripped.

[0044] In one embodiment, the mobile platform 3 includes an X-axis mobile sub-platform, a Y-axis mobile sub-platform and a Z-axis mobile sub-platform.

[0045] Specific, combined Figure 1 In further details, the mobile platform 3 is specifically configured to include an X-axis mobile sub-platform, a Y-axis mobile sub-platform and a Z-axis mobile sub-platform, and the X-axis mobile sub-platform, the Y-axis mobile sub-platform and the Z-axis mobile sub-platform can respectively scan and move along the X-axis, Y-axis and Z-axis in the spatial coordinates, and the scanning movement speed can be adjusted. In this way, the mobile platform 3 can flexibly drive the workpiece to be stripped to scan and move relative to the beam focusing system 4.

[0046] In one embodiment, the first pulse laser system 1 can adjust and output different laser parameters according to the material properties of the piece to be peeled off and the position of the layer to be peeled off; wherein the laser parameters include one or more of laser wavelength, single pulse energy, pulse width and focused spot size.

[0047] By adjusting one or more of the wavelength, single pulse energy, pulse width and focused spot of the ultrashort pulse laser, the parameters of the reflected laser of the first pulse laser system 1 can be changed, so that it can be more adapted to the material properties of different parts to be stripped, further improving the versatility of the dual-laser synchronous coaxial modification and stripping device.

[0048] In addition, the embodiment of the present disclosure also provides a dual-laser synchronous coaxial modification and stripping method, which can be applied to the above-mentioned dual-laser synchronous coaxial modification and stripping device, and includes: The first step S1 is to determine the layer to be peeled off in the object to be peeled off; The second step S2, emitting an ultrashort pulse laser to the layer to be peeled off, so that the layer to be peeled off forms an initial modified layer; The third step S3, emitting a continuous laser to the initial modified layer, so that the initial modified layer is heated to form a cracked complete modified layer; The second step and the third step are performed simultaneously, or the second step and the third step are performed sequentially.

[0049] Specific, combined Figure 2To further explain in detail, the dual laser synchronous coaxial modification and stripping method can be applied to the above-mentioned dual laser synchronous coaxial modification and stripping device, wherein the second step S2 is to form an initial modified layer with microcracks in the layer to be stripped, and the third step S3 is to heat the initial modified layer to form a cracked complete modified layer, and the second step and the third step can be performed simultaneously, or the second step and the third step can be performed sequentially.

[0050] In addition, when multiple layers of peeling are required, the multiple layers to be peeled can be numbered from top to bottom first, and then peeled in sequence by the above-mentioned dual-laser synchronous coaxial modification and peeling method.

[0051] The dual-laser synchronous coaxial modification and stripping method has simple steps and can improve the stripping processing efficiency of the silicon carbide ingot. The synchronously occurring initial modified layer and the completely modified layer of crack extension can make the stress concentration of the silicon carbide ingot more uniform, promote the stable expansion of the crack along the initial modified layer, thereby achieving higher quality stripping.

[0052] In one possible implementation, emitting continuous laser light to the initial modified layer includes: focusing an ultrashort pulse laser on the layer to be peeled off, and performing scanning processing on the layer to be peeled off; The emitting of continuous laser light to the initial modified layer includes: focusing the continuous laser light on the initial modified layer, and performing synchronous coaxial scanning processing on the initial modified layer; Among them, the scanning interval and scanning speed of the scanning processing can be adjusted.

[0053] The synchronous, coaxial and efficient synergy of ultrashort pulse laser and continuous laser significantly reduces the time of modification and stripping, and improves the overall processing efficiency; the synchronous initial modification layer and crack extension make the stress concentration more uniform, prompting the crack to expand stably along the initial modification layer, thereby achieving higher quality stripping.

[0054] In summary, the dual-laser synchronous coaxial modification and stripping method simplifies the process flow of laser stripping of semiconductor ingots, reduces dependence on subsequent processing, and makes the surface roughness of the semiconductor wafer finally stripped lower, which is helpful for subsequent wafer grinding and polishing.

[0055] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0056] The above are only specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A dual-laser synchronous coaxial modification and stripping device, characterized in that: include: A moving platform (3) capable of moving the piece to be peeled along a plurality of different directions; A first pulse laser system (1) emits an ultrashort pulse laser to the object to be peeled off through a first optical path, so as to form an initial modified layer inside the object to be peeled off; A second pulse laser system (2) synchronously emits continuous laser light to the to-be-stripped piece through a second optical path, so as to heat the initial modified layer to form a cracked fully modified layer; A pulse delay control system (11) is arranged in the first optical path and is used to control the pulse delay of the first pulse laser system (1).

2. The dual-laser synchronous coaxial modification and stripping device according to claim 1 is characterized in that: A beam splitter (101) is provided in the front section of the first optical path, and a beam combiner (102) is provided in the rear section of the first optical path; The beam splitter (101) is used to split the first optical path into a first sub-optical path and a second sub-optical path, and the beam combiner (102) is used to combine the first sub-optical path and the second sub-optical path into the first optical path; The pulse delay control system (11) is arranged in the second sub-optical path, and is capable of controlling the optical path difference between the second sub-optical path and the first sub-optical path, thereby generating a pulse delay with the first sub-optical path.

3. The dual-laser synchronous coaxial modification and stripping device according to claim 2 is characterized in that: The pulse delay control system (11) comprises a plurality of reflectors (111) arranged in the second sub-optical path; A half-wave plate (103) and a polarizing plate (104) for regulating the energy of the ultrashort pulse laser are respectively arranged in the first sub-optical path and at the front end of the pulse delay regulation system (11) of the second sub-optical path.

4. The dual-laser synchronous coaxial modification and stripping device according to claim 1 is characterized in that: The second light path is provided with a second reflector (21) for adjusting the direction of the light path, and a second beam combiner (22) for combining light with the first light path.

5. The dual-laser synchronous coaxial modification and stripping device according to claim 1 is characterized in that: The dual-laser synchronous coaxial modification and stripping device further comprises a beam focusing system (4); The beam focusing system (4) comprises a focusing objective lens arranged above the moving platform (3); The focusing objective lens is used to focus the ultrashort pulse laser and the continuous laser together on the layer to be peeled off inside the object to be peeled off.

6. The dual-laser synchronous coaxial modification and stripping device according to claim 1 is characterized in that: The first pulse laser system (1) comprises one or more of a picosecond laser, a nanosecond laser and a femtosecond laser.

7. The dual-laser synchronous coaxial modification and stripping device according to claim 1 is characterized in that: The mobile platform (3) comprises an X-axis mobile sub-platform, a Y-axis mobile sub-platform and a Z-axis mobile sub-platform.

8. The dual-laser synchronous coaxial modification and stripping device according to claim 1 is characterized in that: The first pulse laser system (1) is capable of adjusting and outputting different laser parameters according to the material properties of the object to be peeled off and the position of the layer to be peeled off; The laser parameters include one or more of laser wavelength, single pulse energy, pulse width and focused spot size.

9. A dual-laser synchronous coaxial modification and stripping method, which can be applied to the dual-laser synchronous coaxial modification and stripping device according to any one of claims 1 to 8, characterized in that: include: The first step is to determine the layer to be peeled off in the object to be peeled off; The second step is to emit an ultrashort pulse laser to the layer to be peeled off, so that the layer to be peeled off forms an initial modified layer; The third step is to emit a continuous laser to the initial modified layer to heat the initial modified layer to form a cracked complete modified layer; The second step and the third step are performed simultaneously, or the second step and the third step are performed sequentially.

10. The dual-laser synchronous coaxial modification and stripping method according to claim 9, characterized in that: The emitting of continuous laser light to the initial modified layer comprises: focusing the ultrashort pulse laser light on the layer to be peeled off, and scanning the layer to be peeled off; The emitting of continuous laser light to the initial modified layer comprises: focusing the continuous laser light on the initial modified layer, and performing synchronous coaxial scanning processing on the initial modified layer; Wherein, the scanning interval and scanning speed of the scanning process are adjustable.

Images