Chemical vapor deposition device and method

Abstract

The invention provides a chemical vapor deposition device and method.The chemical vapor deposition device comprises a reaction cavity and a gas nozzle, the gas nozzle is arranged at the top of the reaction cavity, a gas spraying ring assembly is arranged on the periphery of the gas nozzle, the gas spraying ring assembly is provided with at least one gas spraying channel, and the gas spraying channel is obliquely arranged outwards in the radial direction; an outlet of the gas injection channel arranged in the reaction cavity is used for injecting isolation gas to form a gas barrier, and the processing space of the reaction cavity is isolated from the outside of the processing space. According to the chemical vapor deposition device provided by the invention, disordered diffusion and deposition of reaction gas can be effectively prevented, the gas control precision and the film deposition quality are improved, meanwhile, the cleaning and maintenance frequency of the chemical vapor deposition device is reduced, the service life of the chemical vapor deposition device is prolonged, and the production cost is reduced. And the overall stability and reliability of the chemical vapor deposition process are improved.

Description

Technical Field

[0001] The present application relates to the field of chemical vapor deposition devices, and in particular to a chemical vapor deposition device and method. Background Art

[0002] Chemical vapor deposition (CVD) technology is widely used in thin film deposition processes in the fields of semiconductors, optoelectronics, photovoltaic materials, etc. CVD devices usually include components such as a reaction chamber and a gas nozzle. By introducing the reaction gas into the reaction chamber, a chemical reaction occurs on the surface of the substrate to form the desired thin film. However, in existing CVD devices, the diffusion and accumulation of the reaction gas easily lead to the formation of a byproduct deposition layer on the side wall of the reaction chamber. This deposition not only affects the heat transfer efficiency, but may also cause particles to fall off, thereby polluting the internal environment of the reaction chamber and affecting the quality and uniformity of the film.

[0003] In the prior art, in order to reduce the accumulation of byproducts and particle contamination, the environment in the reaction chamber is usually improved by optimizing the gas flow path, adding cleaning steps, or introducing complex gas flow control devices. However, these methods often increase the complexity, cost and maintenance difficulty of the process in actual operation. In addition, these improvements have limitations in effectiveness and adaptability, especially when dealing with more complex deposition processes, it is difficult to simultaneously take into account the requirements of gas uniformity and reaction efficiency.

[0004] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present application, and therefore may include information that does not constitute prior art known to ordinary technicians in the field. Summary of the invention

[0005] In response to the problems in the prior art, the purpose of the present application is to provide a chemical vapor deposition device and method, which aims to solve the problem in the prior art that the reaction gas diffuses disorderly to the side walls of the reaction chamber during the chemical vapor deposition process, resulting in by-product deposition and chamber contamination.

[0006] One aspect of an embodiment of the present application provides a chemical vapor deposition device, including a reaction chamber and a gas nozzle, the gas nozzle is arranged at the top of the reaction chamber, and a jet ring assembly is arranged on the periphery of the gas nozzle, the jet ring assembly has at least one jet channel, and the jet channel is arranged inside the reaction chamber, and the outlet of the jet channel is used to spray isolation gas to form a gas barrier.

[0007] In some embodiments, the chemical vapor deposition apparatus further includes an external gas source device, which is connected to the inlet of the jet channel through a pipeline, and transmits the isolation gas stored in the external gas source device to the outlet of the jet channel through the jet channel.

[0008] In some embodiments, the isolation gas of the external gas source device is an inert gas, and the inert gas is selected from nitrogen, argon, helium, neon, krypton or a mixture thereof.

[0009] In some embodiments, the outlet of the jet channel is inclined outward.

[0010] In some embodiments, the outlet of the jet passage has an inclination angle of 0° to 45° toward the outside.

[0011] In some embodiments, the inner wall of the air injection ring assembly is made of metal, ceramic, or a combination of the two.

[0012] In some embodiments, the gas flow rate of the injection isolation gas is 10,000 standard cubic centimeters per minute to 50,000 standard cubic centimeters per minute.

[0013] In some embodiments, a check valve is provided at the outlet of the jet passage.

[0014] In some embodiments, the gas injection channel is configured as an independent cavity structure inside the shell of the gas injection head.

[0015] In some embodiments, the chemical vapor deposition apparatus further includes an exhaust pipe disposed at the lower portion or side wall of the reaction chamber for exhausting the isolation gas ejected from the jet channel into the reaction chamber to prevent the isolation gas from accumulating inside the chemical vapor deposition apparatus.

[0016] In some embodiments, a vacuum pump is provided at the external outlet of the exhaust duct.

[0017] Another aspect of the embodiments of the present application provides a chemical vapor deposition method, using a chemical vapor deposition device as described in any of the above embodiments, the method comprising the following steps:

[0018] The isolation gas is injected through an injection ring assembly arranged on the periphery of the gas nozzle;

[0019] forming a gas barrier by the injected isolation gas to isolate the processing space of the reaction chamber from the outside of the processing space;

[0020] A chemical vapor deposition process is performed in a processing space of the reaction chamber.

[0021] The chemical vapor deposition device and method provided in this application have the following advantages:

[0022] The chemical vapor deposition device provided by the present application forms a gas barrier by spraying gas through a jet ring assembly, isolates the processing space of the reaction chamber from the outside, reduces the diffusion of the reaction gas to the side wall of the chamber, and reduces the deposition of by-products. This structural design not only improves the accuracy of reaction gas control and the quality of thin film deposition, but also reduces the cleaning and maintenance frequency of the chemical vapor deposition device, prolongs the service life of the chemical vapor deposition device, and improves the overall stability and reliability of the chemical vapor deposition process. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Other features, objects and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings.

[0024] Figure 1 is a schematic cross-sectional structure diagram of a chemical vapor deposition device according to an embodiment of the present application;

[0025] Figure 2 is a schematic diagram of a top view of a chemical vapor deposition device according to an embodiment of the present application;

[0026] Figure 3 is an enlarged schematic diagram of a local structure of a chemical vapor deposition device according to an embodiment of the present application;

[0027] Figure 4 4 is a flow chart of a chemical vapor deposition method according to an embodiment of the present application.

[0028] Among them, 110 is a gas nozzle, 210 is a jet channel, 211 is an outlet of the jet channel, and 300 is a processing space of the reaction chamber. DETAILED DESCRIPTION

[0029] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that the present application will be comprehensive and complete and the concepts of the example embodiments will be fully conveyed to those skilled in the art. The same reference numerals in the figures represent the same or similar structures, and thus their repeated descriptions will be omitted. "Or" and "or" in the specification may both mean "and" or "or". Nothing in this specification should be construed as requiring a specific three-dimensional orientation of the structure to fall within the scope of the present application.

[0030] The present application provides an improved chemical vapor deposition (CVD) device and method thereof, which aims to optimize the distribution of reaction gases, reduce the deposition of byproducts on the side walls of the reaction chamber, reduce the generation of particle defects, and improve the yield of the process and the service life of the chemical vapor deposition device. One of the core components of the chemical vapor deposition device is a gas showerhead 110, which is installed at the top of the reaction chamber and is mainly used to evenly distribute the reaction gas to the processing space 300 of the reaction chamber. The gas showerhead 110 is usually connected to a supply source of reactive gas. When the reactive gas passes through the showerhead, its distribution must be uniform to ensure that the chemical vapor deposition (CVD) process in the reaction chamber can be carried out under a uniform atmosphere. The distribution pattern of the gas showerhead 110 affects the gas flow direction in the reaction chamber and the deposition position of the reactants. The jet ring assembly proposed in the present invention is arranged along the periphery of the gas showerhead 110, and the jet ring assembly has at least one jet channel 210. The purpose of this structural design is to form a gas barrier inside the reaction chamber by spraying an isolation gas, especially an inert gas, to isolate the active area from the inactive area in the reaction chamber, thereby effectively preventing the reaction gas from diffusing to the side wall of the reaction chamber and forming by-products, and reducing particle contamination caused by film peeling. The gas nozzle 110 is responsible for evenly distributing the reaction gas to the processing space 300 of the reaction chamber to ensure uniform deposition of the film. The present invention significantly improves the efficiency and yield of the CVD process, while extending the service life of the chemical vapor deposition device.

[0031] like Figure 1 As shown, the present application provides a chemical vapor deposition device, including a reaction chamber and a gas nozzle 110, the gas nozzle 110 is arranged at the top of the reaction chamber, and a jet ring assembly is arranged on the periphery of the gas nozzle 110, and the jet ring assembly has at least one jet channel 210, and the outlet 211 of the jet channel arranged inside the reaction chamber is used to spray isolation gas to form a gas barrier, isolating the processing space 300 of the reaction chamber from the outside of the processing space. Specifically, as Figure 2As shown, the present invention forms a gas barrier inside the reaction chamber by using a jet ring assembly disposed on the periphery of the gas nozzle 110, using a jetted isolation gas such as an inert gas. The gas barrier can prevent the reaction gas in the reaction chamber from diffusing or migrating to the side wall of the reaction chamber, thereby preventing the reaction gas from forming a byproduct layer on the side wall. This design effectively solves the problem of particle contamination caused by the deposition of reaction gas on the side wall of the reaction chamber and the problem of reducing the film deposition rate in the prior art, reduces the frequency of the cleaning process, thereby improving the production capacity of the chemical vapor deposition (CVD) process, and extending the service life of key components such as the shower head system and the reaction chamber wall. Optionally, the jet channel 210 is tilted outward, and in actual use, the inclination angle of the outlet 211 of the jet channel relative to the reaction chamber can be set as needed. The inclination angle is defined here as the angle between the extension direction of the outlet 211 of the paint spray channel and the up and down direction ( Figure 3 By adjusting the inclination angle, the injection direction and gas flow pattern of the isolation gas, such as the inert gas, can be controlled to adapt to different types of reaction gases and process requirements. A larger inclination angle can make the isolation gas injection closer to the inner wall of the reaction chamber, enhancing the isolation effect of the gas barrier; while a smaller inclination angle can adjust the diffusion pattern of the inert gas in the cavity and provide a better flow field distribution. A plurality of jet channels 210 can be provided on the jet ring assembly, and these jet channels 210 can be evenly distributed along the circumference of the jet ring, or unevenly distributed according to the fluid dynamic characteristics in the reaction chamber. The provision of multiple jet channels 210 can make the gas barrier more uniform and stable, and improve the continuity and sealing of the gas barrier. At the same time, the internal structure of the jet channel 210 can be a circular, square or other polygonal cross-section to affect the direction and speed of the isolation gas flow and further optimize the gas flow pattern in the reaction chamber.

[0032] The chemical vapor deposition device of the present application can form a stable gas barrier in the reaction chamber, prevent the reaction gas from diffusing to the side wall of the chamber and forming a byproduct layer, and effectively reduce the risk of particle contamination. In addition, the optimized design of the jet channel 210 and the precise control of the isolation gas flow rate make the formation and maintenance of the gas barrier more stable, which helps to reduce the frequency of the cleaning process, improve production capacity, and extend the service life of the chemical vapor deposition device. The different selections and adjustments of each embodiment provide the device with greater flexibility and adaptability in different chemical vapor deposition process applications, thereby further improving the product yield and production efficiency of the chemical vapor deposition process.

[0033] Optionally, the chemical vapor deposition device also includes an external gas source device, which is connected to the jet channel 210 through a pipeline, and is used to transport the isolation gas stored in the external gas source device to the outlet 211 of the jet channel, thereby forming a gas barrier in the reaction chamber. The external gas source device is mainly used to provide gas to form a gas barrier, rather than a reactive gas, to form a protective gas flow barrier to prevent the reactive gas from diffusing to the side wall of the reaction chamber. Through the setting of the pipeline, the type and flow of the isolation gas of the external gas source device can be flexibly adjusted to form different gas flow distributions to meet different process requirements. By adjusting the flow of different isolation gases, a gas barrier with different densities and directions can be formed, thereby more accurately controlling the gas environment in the reaction chamber. Optionally, a valve or flowmeter is provided on the pipeline, and by adjusting the valve or flowmeter on the pipeline, the isolation gas flow entering the jet channel 210 can be accurately controlled, thereby realizing rapid adjustment of process parameters and enhancing the flexibility and stability of the process. The use of the external gas source device in this embodiment can provide different isolation gas flow rates and isolation gas type combinations to ensure that a stable gas barrier can be formed under various process conditions. Since the gas barrier can effectively prevent the reaction gas from diffusing to the side wall of the reaction chamber and producing by-products, the chemical vapor deposition device is not only suitable for silicon-based semiconductor materials, but can also be applied to the deposition process of other semiconductor materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond.

[0034] Optionally, the external gas source device can use an inert gas as a gas barrier. Because of its stable chemical properties, inert gases are not prone to chemical reactions and are suitable for forming a gas barrier in a chemical vapor deposition process to isolate the reaction zone from the external environment. The inert gas is ejected from the outlet 211 of the jet channel at a certain flow rate to form a stable gas flow barrier. In some chemical vapor deposition processes, inert gases can also be used as plasma maintenance gases to provide sufficient electrons to maintain the stability of the plasma. Different types of inert gases have their own unique physical properties, such as atomic weight and ionization energy, which affect the diffusion rate of the gas and the behavior of the plasma, thereby affecting the growth process of the film. Therefore, by selecting different inert gases, the gas flow distribution and reaction environment in the reaction chamber can be optimized to improve the deposition quality of the film. In this embodiment, the inert gas can be nitrogen (N2), argon (Ar), helium (He), neon (Ne), krypton (Kr) or a mixture thereof. According to process requirements, selecting a suitable inert gas can meet different process requirements and expand the scope of application of the process. The chemical stability of the inert gas helps to improve the stability of the process, reduce the impact of process parameter fluctuations on film quality, ensure the repeatability of the process, and reduce batch-to-batch differences. In addition, by selecting an inert gas type suitable for the CVD process, the generation of by-products can be reduced and the purity and uniformity of the film can be improved. By adjusting the type and flow rate of the inert gas, the process window can also be optimized to improve the flexibility of the process. The present invention is not limited to the inert gases listed above, and any other isolation gas with similar chemical properties may also be applicable to the present invention. The purity of the inert gas is not the only limiting condition, and even inert gases containing a small amount of impurities can be used in the present invention.

[0035] Optional, such as Figure 3As shown, the inclination angle of the outlet 211 of the jet channel relative to the up and down direction can be between 0° and 45°. By setting the outlet 211 of the jet channel to a certain inclination angle, the direction of the jet isolation gas can be precisely controlled. For example, when the inclination angle is 0°, the isolation gas will be sprayed vertically downward; and when the inclination angle is 45°, the isolation gas will be sprayed obliquely at an angle of 45°. Adjusting the inclination angle of the outlet of the jet channel 210 can achieve fine control of the gas flow distribution in the reaction chamber. When the outlet 211 of the jet channel sprays the isolation gas at a certain inclination angle, the formed gas flow forms an angle with the processing space 300 of the reaction chamber, which helps to establish a gas barrier in the reaction chamber, isolating the processing space 300 of the reaction chamber from the external space. The gas barrier can effectively confine the reaction gas to the reaction chamber processing space surrounded by it, prevent the reaction gas from directly impacting the inner wall of the reaction chamber, thereby reducing the generation of by-products on the inner wall. It should be pointed out that the present application is not limited to the above-mentioned specific inclination angle range. Different tilt angle ranges applicable to different types of chemical vapor deposition devices belong to the protection scope of this application as long as they can achieve the purpose of this application.

[0036] Optionally, the inner wall of the jet channel 210 of the jet ring assembly can be made of metal, ceramic or a combination of the two materials. Physical properties such as surface roughness, thermal conductivity and corrosion resistance of different materials will have different effects on the airflow. Metal materials usually have high thermal conductivity and can quickly dissipate heat to prevent the jet channel 210 from overheating. In addition, the surface of the metal material is relatively smooth, which can reduce the resistance of the airflow. Ceramic materials have good high temperature resistance and corrosion resistance and are suitable for high temperature and highly corrosive process environments. The surface roughness of ceramic materials can also increase the turbulence of the airflow, thereby enhancing the mixing effect of the isolation gas. By adopting a composite structure of metal and ceramic materials, the advantages of the two materials can be combined. For example, the use of metal materials in the inner layer can improve thermal conductivity, while the use of ceramic materials in the outer layer can improve corrosion resistance. The selection of the inner wall material of the jet ring assembly has an important influence on the performance of the CVD process. By selecting a suitable inner wall material, the airflow distribution in the jet channel 210 can be optimized, thereby improving the uniformity of the film. The use of an inner wall material with strong corrosion resistance can also extend the service life of the chemical vapor deposition device and reduce maintenance costs. Different processes have different requirements for the material of the jet channel 210. By selecting appropriate materials, various process requirements can be met and the application scope of the process can be expanded. It should be noted that the present application is not limited to the materials listed above, and other materials with similar properties can also be used in the present application.

[0037] Optionally, the gas flow rate of the injection isolation gas is 10000sccm (standard cubic centimeters per minute) to 50000sccm (standard cubic centimeters per minute). The gas flow rate directly affects the transmission rate, mixing degree and collision frequency of the reaction gas with the substrate in the reaction chamber, thereby affecting the effect of the gas barrier. The isolation gas with a high flow rate forms a high-speed airflow, which can accelerate the gas transport and increase the reaction rate. At the same time, it can reduce the residence time of the reaction gas in the gas phase and reduce the occurrence of side reactions. The dynamic pressure formed by the high-speed airflow can effectively prevent the particles in the cavity from migrating to the reaction zone. Even if particles fall off from the cavity wall or other locations, the high-speed airflow will take them away from the reaction zone, thereby reducing the probability of particle deposition on the film. The high-speed airflow flushes the cavity wall and the reaction table, which can take away the loose particles attached to the surface and reduce the source of particles. Low flow rate can increase the residence time of the reaction gas in the gas phase, which is conducive to the full mixing of the reaction gas and improves the uniformity of the film. For some reactions with slower reaction rates, low flow rates can promote the reaction to reach equilibrium and increase the yield. At low flow rates, the airflow has a weaker carrying capacity for particles, and particles are more likely to deposit in the reaction zone, thereby reducing the roughness of the film. The present application is not limited to the airflow rate range listed above, and airflow velocities within other ranges can also be used in the present application. The present application is not limited to a constant airflow rate, and can also be a pulsed or variable airflow rate.

[0038] Optionally, the outlet 211 of the jet channel is provided with a check valve. The check valve is a one-way flow valve that can only allow the isolation gas to flow in one direction from the jet channel 210 to the reaction chamber, while preventing it from flowing in the opposite direction. The check valve controls the flow direction of the gas by opening and closing the valve flap. When the jet isolation gas is ejected from the nozzle, the valve flap opens and the isolation gas flows out smoothly; when the pressure in the reaction chamber is higher than the nozzle outlet pressure, the valve flap closes to prevent the reaction gas from flowing back. The check valve can protect the chemical vapor deposition device, prevent the reaction gas from flowing back to corrode the pipeline or pollute other chemical vapor deposition devices, and extend the service life of the chemical vapor deposition device. Similarly, the check valve can also be made of high temperature resistant and corrosion resistant ceramic material. The present application is not limited to the installation position of the check valve, and the check valve can be installed at the outlet 211 of the jet channel or other suitable positions.

[0039] Optionally, the jet channel 210 is configured as an independent cavity structure inside the shell of the gas nozzle 110, isolating the jet channel 210 from other parts of the nozzle shell to form a relatively independent space. Integrating the jet channel 210 into the nozzle shell reduces additional pipe connections and installation steps, thereby simplifying the structure of the chemical vapor deposition device and saving installation space. At the same time, it also reduces the use of pipes and connectors, reducing the manufacturing cost of the chemical vapor deposition device. Configuring the jet channel 210 as an independent cavity structure can not only improve the airflow distribution, protect the nozzle, and improve the process stability, but also save installation space, reduce costs, and improve the reliability of the chemical vapor deposition device.

[0040] Optionally, the chemical vapor deposition device also includes an exhaust pipe, which is arranged at the lower part or side wall of the reaction chamber to discharge the isolation gas ejected from the jet channel 210 into the reaction chamber to prevent the isolation gas from accumulating inside the chemical vapor deposition device. After the isolation gas ejected from the jet channel 210 reacts in the reaction chamber, it is discharged from the reaction chamber through the exhaust pipe. The setting of the exhaust pipe helps to maintain the pressure balance in the reaction chamber and prevent the chemical vapor deposition device from being damaged due to excessive pressure. The exhaust pipe can also discharge the waste gas in the reaction chamber to prevent the isolation gas from accumulating in the chamber and affecting the reaction process. Combined with the inclined setting of the jet channel 210, the exhaust pipe can be arranged in alignment with the outlet 211 of the jet channel, which can further optimize the gas flow in the reaction chamber and improve the uniformity of the film and the stability of the process. Furthermore, a variety of devices can be arranged outside the exhaust pipe to further extract the isolation gas to improve the exhaust efficiency and improve the process environment. For example, a vacuum pump is arranged outside the exhaust pipe to reduce the pressure of the exhaust pipe to generate a vacuum, thereby accelerating the flow of the gas and improving the exhaust efficiency.

[0041] like Figure 4 As shown, another aspect of the embodiment of the present application provides a chemical vapor deposition method, using a chemical vapor deposition device as in any of the above embodiments. The method is particularly suitable for thin film deposition processes that require high uniformity and low contamination. Specifically, the method includes the following steps:

[0042] S100, injecting the isolation gas through the injection ring assembly disposed on the periphery of the gas nozzle 110. Optionally, the outlet 211 of the injection channel in the injection ring assembly is designed to be tilted outward, so that the isolation gas presents a certain tilt angle during the injection process, so that a uniform isolation gas flow field can be formed, ensuring the uniform distribution of the reaction gas in the deposition area, thereby improving the deposition quality.

[0043] S200, a gas barrier is formed by injecting the isolation gas to isolate the processing space 300 of the reaction chamber from the outside of the processing space. By controlling the flow rate and flow rate of the isolation gas, a stable gas barrier can be formed, which can effectively prevent external pollutants from entering the processing space 300 of the reaction chamber, and can also inhibit the diffusion of reaction by-products to the outside of the reaction chamber, thereby improving the purity of the deposition process and the quality of the film.

[0044] S300, a chemical vapor deposition process is performed in the processing space 300 of the reaction chamber. Specifically, by adjusting the composition, concentration and flow rate of the reaction gas, as well as the temperature and pressure in the reaction chamber, the thickness and composition uniformity of the deposited film can be controlled. The chemical vapor deposition process may include but is not limited to the formation of thin films such as silicide, nitride, oxide, etc., and is suitable for the manufacture of semiconductor devices, optoelectronic devices and other microelectronic devices.

[0045] The chemical vapor deposition (CVD) method provided by the above embodiment may have the following advantages:

[0046] Improve film uniformity and quality: The tilted injection design of the gas injection ring assembly and the formation of a gas barrier can ensure the uniform distribution and purity of the reaction gas, thereby improving the uniformity and quality of the film.

[0047] Reduce pollution and diffusion of by-products: The gas barrier can effectively prevent the entry of external impurities and the diffusion of reaction by-products, reducing the risk of contamination, and is particularly suitable for thin film deposition processes with high purity requirements.

[0048] Improving the applicability and stability of chemical vapor deposition equipment: The chemical vapor deposition equipment using this method can show excellent performance under a variety of material systems and process conditions, thereby improving the applicability and stability of the chemical vapor deposition equipment and being suitable for the manufacture of high-precision products such as semiconductor devices.

[0049] Flexible adjustment according to demand: The design of the jet ring assembly and the isolation gas injection parameters described in the first step can be adjusted according to different material systems and process requirements to meet different deposition requirements.

[0050] The above content is a further detailed description of the present application in combination with specific preferred implementation methods, and it cannot be determined that the specific implementation of the present application is limited to these descriptions. For ordinary technicians in the technical field to which the present application belongs, several simple deductions or substitutions can be made without departing from the concept of the present application, which should be deemed to fall within the scope of protection of the present application.

Claims

1. A chemical vapor deposition device, comprising a reaction chamber and a gas nozzle, wherein the gas nozzle is arranged at the top of the reaction chamber, characterized in that: The outer periphery of the gas nozzle is provided with a jet ring assembly, and the jet ring assembly has at least one jet channel, and the jet channel is arranged inside the reaction chamber, and the outlet of the jet channel is used to spray isolation gas to form a gas barrier.

2. The chemical vapor deposition device according to claim 1, characterized in that: The chemical vapor deposition apparatus further includes an external gas source device, which is connected to the inlet of the jet channel through a pipeline, and transmits the isolation gas stored in the external gas source device to the outlet of the jet channel through the jet channel.

3. The chemical vapor deposition device according to claim 2, characterized in that: The isolation gas provided by the external gas source device is an inert gas, and the inert gas is selected from nitrogen, argon, helium, neon, krypton or a mixed gas thereof.

4. The chemical vapor deposition device according to claim 1, characterized in that: The outlet of the jet passage is arranged to be inclined outward.

5. The chemical vapor deposition device according to claim 4, characterized in that: The outlet of the jet passage has an inclination angle toward the outside of 0° to 45°.

6. The chemical vapor deposition device according to claim 1, characterized in that: The inner wall of the jet ring assembly is made of metal, ceramic or a combination of the two.

7. The chemical vapor deposition device according to claim 1, characterized in that: The gas flow rate of the spraying isolation gas is 10,000 standard cubic centimeters per minute to 50,000 standard cubic centimeters per minute.

8. The chemical vapor deposition device according to claim 1, characterized in that: The outlet of the jet passage is provided with a check valve.

9. The chemical vapor deposition device according to claim 1, characterized in that: The chemical vapor deposition device further comprises an exhaust pipe, which is arranged at the lower part or the side wall of the reaction chamber and is used to exhaust the isolation gas ejected from the jet channel into the reaction chamber.

10. The chemical vapor deposition device according to claim 9, characterized in that: The external outlet of the exhaust pipe is provided with a vacuum pump.

11. A chemical vapor deposition method, characterized in that: Using the chemical vapor deposition apparatus according to any one of claims 1 to 10, the method comprises the following steps: The isolation gas is injected through an injection ring assembly arranged on the periphery of the gas nozzle; forming a gas barrier by the injected isolation gas to isolate the processing space of the reaction chamber from the outside of the processing space; A chemical vapor deposition process is performed in a processing space of the reaction chamber.

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