Multi-bonding wire test circuit and test method

Abstract

The invention provides a multi-bonding-wire test circuit and a test method, the multi-bonding-wire test circuit comprises an H-bridge drive circuit, a first drive module and a second drive module respectively comprise an upper power tube, an output pin and a lower power tube which are connected in series between a power supply pin and a grounding pin, the H-bridge driving circuit is connected with the power supply pin, the grounding pin and the output pins through the bonding wire group, and the internal switching circuit is connected in series between the two output pins; and a judgment unit in the pin voltage difference measurement module obtains the detection total resistance of the bonding wire group according to the detection voltage and the pull-out current, obtains the detection resistance of a single bonding wire according to the detection total resistance and the number of the bonding wires, and obtains the connection state information of the bonding wire group by comparing the detection resistance with a preset resistance. According to the invention, a test mode of a plurality of bonding wires can be realized, and the connection state of the bonding wire group can be accurately detected, so that the chip security is improved.

Description

Technical Field

[0001] The present invention relates to the field of chip detection, and in particular to a multi-bond wire test circuit and a test method. Background Art

[0002] In power and driver chips, there can be multiple bonding wires connecting power tubes with high current capability requirements and packages. Multiple bonding wires can reduce the resistance of the bonding wires and also reduce the open resistance of the power tubes seen outside the package. Multiple bonding wires have a safety issue. If one of the multiple bonding wires is not connected, the functional test cannot find this problem, but the current capability of the bonding wire decreases, which may cause problems such as disconnection of the bonding wire over time. Therefore, it is necessary to check whether multiple bonding wires are connected to improve the safety of multiple bonding wires.

[0003] In view of this, the present invention provides a multi-bond wire test circuit and a test method. Summary of the invention

[0004] In view of the problems in the prior art, the multi-bonding wire test circuit and test method of the present invention overcome the difficulties of the prior art, can implement a test mode for multiple bonding wires, accurately detect the connection status of the bonding wire group, and thus improve chip security.

[0005] An embodiment of the present invention provides a multi-bond wire test circuit, comprising:

[0006] An H-bridge driving circuit, the H-bridge driving circuit comprising an internal switch circuit and a first drive module and a second drive module that are identical, the first drive module and the second drive module each comprising an upper power tube, an output pin and a lower power tube connected in series between a power pin and a ground pin, the H-bridge driving circuit is connected to the power pin, the ground pin and the output pin respectively through a bonding wire group, and the internal switch circuit is connected in series between the two output pins;

[0007] At least one pin voltage difference measurement module, the pin voltage difference measurement module includes a storage, a current monitoring unit, a voltage monitoring unit and a judgment unit; the current monitoring unit detects the pull-out current through the pin to be tested, the voltage monitoring unit detects the detection voltage of the pin to be tested, the storage stores the number of bonding wires of the bonding wire group connected to the pin to be tested, the preset resistance of a single bonding wire and an error threshold, the judgment unit obtains the total detection resistance of the bonding wire group according to the detection voltage and the pull-out current, and obtains the detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires, and obtains the connection status information of the bonding wire group by comparing the detection resistance with the preset resistance.

[0008] Preferably, the first driving module includes a first high-side driving power tube, a first output driving pin and a first low-side driving power tube;

[0009] The first driving module includes a second high-side driving power tube, a second output driving pin and a second low-side driving power tube.

[0010] Preferably, when the difference between the detection resistance and the preset resistance is less than an error threshold, the bonding wire group is in a normal connection state;

[0011] When the difference between the detection resistance and the preset resistance is greater than an error threshold, a bonding wire break exists in the bonding wire group.

[0012] Preferably, it includes a first pin voltage difference measurement module, which includes a first storage, a first current monitoring unit, a first voltage monitoring unit and a first judgment unit; the first pin voltage difference measurement module is connected to the internal switch circuit and drives the internal switch circuit to maintain an open circuit state, the first current monitoring unit detects a first pull-out current between the power pin and the first output drive pin, the first voltage monitoring unit detects a first detection voltage difference between the power pin and an output pin, the first storage stores the number of bonding wires of the first bonding wire group connected to the power pin and a preset resistance of a single bonding wire, the first judgment unit obtains the total detection resistance of the first bonding wire group according to the first detection voltage difference and the first pull-out current, and obtains the detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires, and obtains the connection state information of the first bonding wire group connected to the power pin by comparing the detection resistance with the preset resistance.

[0013] Preferably, a second pin voltage difference measurement module is further included, and the second pin voltage difference measurement module includes a second storage, a second current monitoring unit, a second voltage monitoring unit and a second judgment unit; the second pin voltage difference measurement module is connected to the internal switch circuit and drives the internal switch circuit to maintain a closed and conducting state, the second current monitoring unit detects a second pull-out current between the power pin and the first output drive pin, the second voltage monitoring unit detects a second detection voltage difference between the first output drive pin and the second output drive pin, the second storage stores the number of bonding wires of the second bonding wire group connected to the first output drive pin and a preset resistance of a single bonding wire, the second judgment unit obtains the total detection resistance of the second bonding wire group according to the second detection voltage difference and the second pull-out current, and obtains the detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires, and obtains the connection state information of the second bonding wire group connected to the first output drive pin by comparing the detection resistance with the preset resistance.

[0014] Preferably, a third pin voltage difference measurement module is further included, and the third pin voltage difference measurement module includes a third storage, a third current monitoring unit, a third voltage monitoring unit and a third judgment unit; the third pin voltage difference measurement module is connected to the internal switch circuit and drives the internal switch circuit to maintain a closed and conducting state, the third current monitoring unit detects a third pull-out current between the first output drive pin and the ground pin, and the third voltage monitoring unit detects a third detection voltage difference between the second output drive pin and the ground pin, the third storage stores the number of bonding wires of the third bonding wire group connected to the ground pin and a preset resistance of a single bonding wire, the third judgment unit obtains the total detection resistance of the third bonding wire group according to the third detection voltage difference and the third pull-out current, and obtains the detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires, and obtains the connection state information of the third bonding wire group connected to the first output drive pin by comparing the detection resistance with the preset resistance.

[0015] Preferably, the internal switch circuit is a back-to-back MOS tube switch.

[0016] An embodiment of the present invention further provides a multi-bond wire testing method, using a chip including the multi-bond wire testing circuit described above, comprising the following steps:

[0017] S100, when the internal switch circuit is in an on state, obtaining a detection resistance of a single bonding wire according to a total detection resistance of a first bonding wire group connected to the power pin and the number of bonding wires, and obtaining connection state information of the first bonding wire group by comparing the detection resistance with a preset resistance;

[0018] S200, when the internal switch circuit is in a closed state, obtaining a detection resistance of a single bonding wire according to a total detection resistance of a second bonding wire group connected to the first output drive pin and the number of bonding wires, and obtaining connection state information of the second bonding wire group by comparing the detection resistance with a preset resistance;

[0019] S300, when the internal switch circuit is closed, obtaining a detection resistance of a single bonding wire according to a total detection resistance of a third bonding wire group connected to the ground pin and the number of bonding wires, and obtaining connection state information of the third bonding wire group by comparing the detection resistance with a preset resistance; and

[0020] S400: When the difference between the detection resistance of each of the first bonding wire group, the second bonding wire group, and the third bonding wire group and the corresponding preset resistance is less than an error threshold, the chip passes the test.

[0021] Preferably, the step S100 includes:

[0022] S101, driving the internal switch circuit to maintain an open circuit state;

[0023] S102, detecting a first pull-out current between the power pin and the first output drive pin;

[0024] S103, detecting a first detection voltage difference between the power pin and one of the output pins;

[0025] S104, obtaining a detection total resistance of the first bonding wire group according to the first detection voltage difference and the first pull-out current;

[0026] S105, obtaining a detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires; and

[0027] S106. Obtain connection status information of a first bonding wire group connected to the power pin by comparing the detection resistance with a preset resistance; when a difference between the detection resistance and the preset resistance is less than an error threshold, the first bonding wire group is in a normal connection state; and when a difference between the detection resistance and the preset resistance is greater than the error threshold, a bonding wire break exists in the first bonding wire group.

[0028] Preferably, the step S200 includes:

[0029] S201, driving the internal switch circuit to maintain a closed conducting state;

[0030] S202, detecting a second pull-out current from the power pin to the first output drive pin;

[0031] S203, the second voltage monitoring unit detects a second detection voltage difference between the first output drive pin and the second output drive pin;

[0032] S204, the second judgment unit obtains a detected total resistance of the second bonding wire group according to the second detected voltage difference and the second pull-out current;

[0033] S205, obtaining a detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires; and

[0034] S206. Obtain connection status information of a second bonding wire group connected to the first output drive pin by comparing the detection resistance with the preset resistance; when the difference between the detection resistance and the preset resistance is less than an error threshold, the second bonding wire group is in a normal connection state; when the difference between the detection resistance and the preset resistance is greater than the error threshold, a bonding wire break exists in the second bonding wire group.

[0035] Preferably, the step S300 includes:

[0036] S301, driving the internal switch circuit to maintain a closed conducting state;

[0037] S302, detecting a third pull-out current between the first output drive pin and the ground pin;

[0038] S303, detecting a third detection voltage difference between the second output drive pin and the ground pin;

[0039] S304, obtaining a detection total resistance of the third bonding wire group according to the third detection voltage difference and the third pull-out current;

[0040] S305, obtaining a detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires; and

[0041] S306. Obtain connection status information of a third bonding wire group connected to the ground pin by comparing the detection resistance with the preset resistance; when the difference between the detection resistance and the preset resistance is less than an error threshold, the third bonding wire group is in a normal connection state; when the difference between the detection resistance and the preset resistance is greater than the error threshold, a bonding wire break exists in the third bonding wire group.

[0042] The multi-bonding wire test circuit and test method of the present invention can realize a test mode for multiple bonding wires and accurately detect the connection status of the bonding wire group, thereby improving chip security. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Other features, objectives and advantages of the present invention will become more apparent from a reading of the detailed description of non-limiting embodiments made with reference to the following accompanying drawings.

[0044] Figure 1 is a circuit diagram of a multi-bond wire test circuit of the present invention.

[0045] Figure 2 It is a schematic diagram of the principle of implementing the first multi-bond wire testing method in the multi-bond wire testing method of the present invention.

[0046] Figure 3 It is a schematic diagram of the principle of implementing the second multi-bond wire testing method in the multi-bond wire testing method of the present invention.

[0047] Figure 4 It is a schematic diagram of the principle of implementing the third multi-bond wire testing method in the multi-bond wire testing method of the present invention.

[0048] Reference numerals

[0049] 1 Power pin

[0050] 2 Ground pins

[0051] 3. The first high-side drive power tube

[0052] 4 First output drive pin

[0053] 5 The first low-side drive power tube

[0054] 6 Second high-side drive power tube

[0055] 7 Second output drive pin

[0056] 8 Second low-side drive power tube

[0057] 9 Internal switch circuit DETAILED DESCRIPTION

[0058] The following describes the implementation methods of the present application through specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the content disclosed in the present application. The present application can also be implemented or applied through other different specific implementation methods, and the details in the present application can also be modified or changed in various ways according to different viewpoints and application systems without departing from the spirit of the present application. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0059] The following is a detailed description of the embodiments of the present application with reference to the accompanying drawings so that those skilled in the art can easily implement the present application. The present application can be embodied in a variety of different forms and is not limited to the embodiments described herein.

[0060] In the representations of the present application, the representations with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" etc. mean that the specific features, structures, materials or characteristics represented in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. Moreover, the represented specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples represented in the present application and the features of the different embodiments or examples, unless they contradict each other.

[0061] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the representation of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0062] In order to clearly describe the present application, components irrelevant to the description are omitted, and the same reference symbols are given to the same or similar components throughout the specification.

[0063] Throughout the specification, when a device is said to be "connected" to another device, this includes not only the case of "direct connection" but also the case of "indirect connection" by placing other elements therebetween. In addition, when a device is said to "include" a certain component, unless otherwise stated, it does not exclude other components, but means that other components may be included.

[0064] When a device is said to be "on" another device, it may be directly on the other device, but there may also be other devices between it. In contrast, when a device is said to be "directly" on another device, there are no other devices between it.

[0065] Although the terms first, second, etc. are used to represent various elements in some examples, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, the first interface and the second interface, etc. are represented. Moreover, as used in this article, the singular forms "one", "one" and "the" are intended to also include plural forms, unless there is an opposite indication in the context. It should be further understood that the terms "comprising" and "including" indicate the existence of features, steps, operations, elements, components, projects, kinds, and / or groups, but do not exclude the existence, occurrence or addition of one or more other features, steps, operations, elements, components, projects, kinds, and / or groups. The terms "or" and "and / or" used herein are interpreted as inclusive, or mean any one or any combination. Therefore, "A, B or C" or "A, B and / or C" means "any of the following: A; B; C; A and B; A and C; B and C; A, B and C". Only when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way, will there be an exception to this definition.

[0066] The technical terms used herein are only used to refer to specific embodiments and are not intended to limit the present application. The singular form used herein also includes the plural form unless the sentence clearly indicates the contrary meaning. The meaning of "including" used in the specification is to specify specific characteristics, regions, integers, steps, operations, elements and / or components, and does not exclude the existence or addition of other characteristics, regions, integers, steps, operations, elements and / or components.

[0067] Although not defined differently, all terms, including technical and scientific terms used herein, have the same meaning as those generally understood by those skilled in the art to which this application belongs. Terms defined in commonly used dictionaries are additionally interpreted as having meanings consistent with the relevant technical literature and the contents of the current disclosure, and unless defined, shall not be overly interpreted as ideal or very formal meanings.

[0068] Figure 1 : is a circuit diagram of a multi-bond wire test circuit of the present invention. Figure 1 As shown, the multi-bonding wire test circuit of the present invention includes: an H-bridge driving circuit and at least one pin voltage difference measurement module. Among them, the H-bridge driving circuit includes an internal switch circuit 9 and the same first driving module and second driving module, the first driving module and the second driving module each include an upper power tube, an output pin and a lower power tube connected in series between the power pin 1 and the ground pin 2, the H-bridge driving circuit is respectively connected to the power pin 1, the ground pin 2 and the output pin through a bonding wire group, and the internal switch circuit 9 is connected in series between the two output pins. The pin voltage difference measurement module includes a storage, a current monitoring unit, a voltage monitoring unit and a judgment unit. The current monitoring unit detects the pull-out current through the pin to be tested, the voltage monitoring unit detects the detection voltage of the pin to be tested, the storage stores the number of bonding wires of the bonding wire group connected to the pin to be tested, the preset resistance of a single bonding wire and the error threshold, the judgment unit obtains the total detection resistance of the bonding wire group according to the detection voltage and the pull-out current, and obtains the detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires, and obtains the connection status information of the bonding wire group by comparing the size of the detection resistance with the preset resistance.

[0069] In a preferred embodiment, the first driving module includes a first high-side driving power tube 3, a first output driving pin 4 and a first low-side driving power tube 5. The first driving module includes a second high-side driving power tube 6, a second output driving pin 7 and a second low-side driving power tube 8, but is not limited thereto.

[0070] In a preferred embodiment, when the difference between the detection resistance and the preset resistance is less than the error threshold, the bonding wire group is in a normal connection state. When the difference between the detection resistance and the preset resistance is greater than the error threshold, there is a bonding wire break in the bonding wire group, but the present invention is not limited thereto.

[0071] In a preferred embodiment, a first pin voltage difference measurement module is included, and the first pin voltage difference measurement module includes a first storage, a first current monitoring unit, a first voltage monitoring unit, and a first judgment unit. The first pin voltage difference measurement module is connected to the internal switch circuit 9 and drives the internal switch circuit 9 to maintain an open circuit state, the first current monitoring unit detects a first pull-out current between the power pin and the first output drive pin 4, the first voltage monitoring unit detects a first detection voltage difference between the power pin 1 and an output pin, the first storage stores the number of bonding wires of the first bonding wire group connected to the power pin 1 and a preset resistance of a single bonding wire, the first judgment unit obtains the total detection resistance of the first bonding wire group according to the first detection voltage difference and the first pull-out current, and obtains the detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires, and obtains the connection state information of the first bonding wire group connected to the power pin 1 by comparing the size of the detection resistance with the preset resistance, but is not limited to this.

[0072] In a preferred embodiment, a second pin voltage difference measurement module is further included, and the second pin voltage difference measurement module includes a second storage, a second current monitoring unit, a second voltage monitoring unit, and a second judgment unit. The second pin voltage difference measurement module is connected to the internal switch circuit 9 and drives the internal switch circuit 9 to maintain a closed and conducting state, the second current monitoring unit detects the second pull-out current between the power pin and the first output drive pin 4, the second voltage monitoring unit detects the second detection voltage difference between the first output drive pin 4 and the second output drive pin 7, the second storage stores the number of bonding wires of the second bonding wire group connected to the first output drive pin 4 and the preset resistance of a single bonding wire, the second judgment unit obtains the total detection resistance of the second bonding wire group according to the second detection voltage difference and the second pull-out current, and obtains the detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires, and obtains the connection state information of the second bonding wire group connected to the first output drive pin 4 by comparing the size of the detection resistance with the preset resistance, but is not limited to this.

[0073] In a preferred embodiment, a third pin voltage difference measurement module is further included, and the third pin voltage difference measurement module includes a third storage, a third current monitoring unit, a third voltage monitoring unit, and a third judgment unit. The third pin voltage difference measurement module is connected to the internal switch circuit 9 and drives the internal switch circuit 9 to maintain a closed conduction state, the third current monitoring unit detects the third pull-out current between the first output drive pin 4 and the ground pin 2, the third voltage monitoring unit detects the third detection voltage difference between the second output drive pin 4 and the ground pin 2, the third storage stores the number of bonding wires of the third bonding wire group connected to the ground pin 2 and the preset resistance of a single bonding wire, the third judgment unit obtains the total detection resistance of the third bonding wire group according to the third detection voltage difference and the third pull-out current, and obtains the detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires, and obtains the connection state information of the third bonding wire group connected to the first output drive pin 4 by comparing the size of the detection resistance with the preset resistance, but is not limited thereto.

[0074] In a preferred embodiment, the internal switch circuit 9 is a back-to-back MOS transistor switch, but not limited thereto.

[0075] The present invention reuses the circuit of the H-bridge driving circuit itself and adds an internal switch circuit, so that all the pins of the H-bridge with multiple bonding wires can be tested on ATE and the chips with problems can be screened out.

[0076] Figure 2 It is a schematic diagram of the principle of implementing the first multi-bond wire testing method in the multi-bond wire testing method of the present invention. Figure 3 It is a schematic diagram of the principle of implementing the second multi-bond wire testing method in the multi-bond wire testing method of the present invention. Figure 4 FIG. 1 is a schematic diagram of the principle of implementing the third multi-bond wire testing method of the present invention. Figures 2 to 4 As shown, an embodiment of the present invention further provides a multi-bond wire testing method, which uses the multi-bond wire testing circuit described above and includes the following steps:

[0077] S100, when the internal switch circuit 9 is in an open state, the detection resistance of a single bonding wire is obtained according to the total detection resistance of the first bonding wire group connected to the power pin 1 and the number of bonding wires, and the connection state information of the first bonding wire group is obtained by comparing the detection resistance with a preset resistance.

[0078] S200, when the internal switch circuit 9 is in a closed state, the detection resistance of a single bonding wire is obtained according to the total detection resistance of the second bonding wire group connected to the first output drive pin 4 and the number of bonding wires, and the connection state information of the second bonding wire group is obtained by comparing the detection resistance with the preset resistance.

[0079] S300, when the internal switch circuit 9 is closed, obtain the detection resistance of a single bonding wire according to the total resistance of the third bonding wire group connected to the ground pin 2 and the number of bonding wires, and obtain the connection status information of the third bonding wire group by comparing the detection resistance with the preset resistance.

[0080] S400: When the difference between the detection resistance of each of the first bonding wire group, the second bonding wire group, and the third bonding wire group and the corresponding preset resistance is less than an error threshold, the chip passes the test.

[0081] In a preferred embodiment, the order of steps S100, S200 and S300 can be replaced, but is not limited thereto.

[0082] In a preferred embodiment, the step S100 includes:

[0083] S101 , driving the internal switch circuit 9 to maintain an open circuit state.

[0084] S102: Detect a first pull-out current from the power pin to the first output drive pin.

[0085] S103, detecting a first detection voltage difference between the power pin and one of the output pins.

[0086] S104: Obtain a detected total resistance of the first bonding wire group according to the first detected voltage difference and the first pull-out current.

[0087] S105 . Obtain a detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires.

[0088] as well as

[0089] S106, by comparing the detection resistance with the preset resistance, obtaining the connection state information of the first bonding wire group connected to the power pin 1, when the difference between the detection resistance and the preset resistance is less than the error threshold, the first bonding wire group is in a normal connection state. When the difference between the detection resistance and the preset resistance is greater than the error threshold, there is a bonding wire break in the first bonding wire group.

[0090] In a preferred embodiment, the step S200 includes:

[0091] S201, driving the internal switch circuit 9 to maintain a closed conducting state.

[0092] S202 , detecting a second pull-out current between the power pin and the first output drive pin 4 .

[0093] S203 . The second voltage monitoring unit detects a second detection voltage difference between the first output drive pin 4 and the second output drive pin 7 .

[0094] S204: The second determining unit obtains a detected total resistance of the second bonding wire group according to the second detected voltage difference and the second pull-out current.

[0095] S205 . Obtain a detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires.

[0096] as well as

[0097] S206, by comparing the detection resistance with the preset resistance, obtaining the connection state information of the second bonding wire group connected to the first output drive pin 4, when the difference between the detection resistance and the preset resistance is less than the error threshold, the second bonding wire group is in a normal connection state. When the difference between the detection resistance and the preset resistance is greater than the error threshold, there is a bonding wire break in the second bonding wire group.

[0098] In a preferred embodiment, the step S300 includes:

[0099] S301, driving the internal switch circuit 9 to maintain a closed conducting state.

[0100] S302 , detecting a third pull-out current between the first output drive pin 4 and the ground pin 2 .

[0101] S303 , detecting a third detection voltage difference between the second output drive pin 4 and the ground pin 2 .

[0102] S304: Obtain a detected total resistance of the third bonding wire group according to the third detected voltage difference and the third pull-out current.

[0103] S305 , obtaining a detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires.

[0104] as well as

[0105] S306. Obtain connection status information of a third bonding wire group connected to the ground pin 2 by comparing the detection resistance with the preset resistance; when the difference between the detection resistance and the preset resistance is less than an error threshold, the third bonding wire group is in a normal connection state; when the difference between the detection resistance and the preset resistance is greater than the error threshold, a bonding wire break exists in the third bonding wire group.

[0106] refer to Figures 2 to 4 The implementation process of the multi-bond wire test method of the present invention uses a chip including the multi-bond wire test circuit described above, and the implementation process is as follows:

[0107] Continue to refer Figure 2 , for the test configuration of the bonding wire of the power pin, first, open the internal switch circuit 9 to disconnect. Pull out the current I_cur from the power pin to the first output drive pin 4 (PIN1) pin, then measure the voltage difference V_bond between the power pin and the second output drive pin 7 (PIN2) pin, and the bonding wire resistance of the power pin can be calculated. The measured value of the total resistance of multiple bonding wires is V_bond / I_cur. The resistance of a single bonding wire is R_bond_single, and m bonding wires are connected in parallel. And, R_bond = R_bond_single / m, this expected value is compared with V_bond / I_cur, if the value difference is small, it means that the bonding wire connected to the power pin 1 is not disconnected, if the expected value is less than the measured value, there is a bond wire that is not connected, so that the chips with problems in the connection of multiple bonding wires are screened out.

[0108] Continue to refer Figure 3 , for the test configuration of the bonding wire of the first output drive pin 4 (PIN1), first, close the internal switch circuit 9, and similarly, pull out the current I_cur from the power supply pin 1 (VCC) pin to the first output drive pin 4 (PIN1). At this time, measure the voltage difference V_bond between the first output drive pin 4 (PIN1) and the second output drive pin 7 (PIN2), and calculate the resistance of the bonding wire of the first output drive pin 4 (PIN1). The total resistance of multiple bonding wires is measured as V_bond / I_cur. The resistance of a single bonding wire is R_bond_single, m bonding wires are connected in parallel, R_bond = R_bond_single / m, and this expected value is compared with V_bond / I_cur. If the difference is small, it means that the bonding wire connected to the first output drive pin 4 is not disconnected. If the expected value is less than the measured value, there is a disconnection in the bonding wire, so that the chips with problems in the connection of multiple bonding wires are screened out.

[0109] Continue to refer Figure 4, for the test configuration of the bonding wire of the ground pin, first, open the internal switch circuit 9 to disconnect the circuit. Pull out the current I_cur from the ground pin to the first output drive pin 4 (PIN1) pin, and then measure the voltage difference V_bond between the ground pin and the second output drive pin 7 (PIN2) pin, and the bonding wire resistance of the ground pin can be calculated. The measured value of the total resistance of multiple bonding wires is V_bond / I_cur. The resistance of a single bonding wire is R_bond_single, m bonding wires are connected in parallel, R_bond = R_bond_single / m, and this expected value is compared with V_bond / I_cur. If the value difference is small, it means that the bonding wire connected to the ground pin is not disconnected. If the expected value is less than the measured value, there is a disconnection in the bonding wire, so that the chips with problems in the connection of multiple bonding wires can be screened out.

[0110] Finally, when the difference between the detection resistance of each of the first bonding wire group, the second bonding wire group, and the third bonding wire group and the corresponding preset resistance is less than the error threshold (equivalent to the first bonding wire group, the second bonding wire group, and the third bonding wire group in the same chip are all connected, and there is no disconnection of any bonding wire), the chip passes the test. Otherwise, there is a problem with the connection of the multiple bonding wires.

[0111] In summary, the multi-bonding wire test circuit and test method of the present invention can realize the test mode of multiple bonding wires, accurately detect the connection status of the bonding wire group, thereby improving the chip security, and has a simple design, low cost and good test effect.

[0112] The above contents are further detailed descriptions of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the protection scope of the present invention.

Claims

1. A multi-bond wire test circuit, characterized in that: include: An H-bridge driving circuit, the H-bridge driving circuit comprising an internal switch circuit (9) and identical first and second drive modules, the first and second drive modules each comprising an upper power tube, an output pin and a lower power tube connected in series between a power pin (1) and a ground pin (2), the H-bridge driving circuit being connected to the power pin (1), the ground pin (2) and the output pin respectively through a bonding wire group, and the internal switch circuit (9) being connected in series between the two output pins; and At least one pin voltage difference measurement module, the pin voltage difference measurement module includes a storage, a current monitoring unit, a voltage monitoring unit and a judgment unit; the current monitoring unit detects the pull-out current through the pin to be tested, the voltage monitoring unit detects the detection voltage of the pin to be tested, the storage stores the number of bonding wires of the bonding wire group connected to the pin to be tested, the preset resistance of a single bonding wire and an error threshold, the judgment unit obtains the total detection resistance of the bonding wire group according to the detection voltage and the pull-out current, and obtains the detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires, and obtains the connection status information of the bonding wire group by comparing the detection resistance with the preset resistance.

2. The multi-bond wire test circuit according to claim 1, wherein: The first driving module comprises a first high-side driving power tube (3), a first output driving pin (4) and a first low-side driving power tube (5); The first driving module comprises a second high-side driving power tube (6), a second output driving pin (7) and a second low-side driving power tube (8).

3. The multi-bond wire test circuit according to claim 2, characterized in that: When the difference between the detection resistance and the preset resistance is less than the error threshold, the bonding wire group is in a normal connection state; When the difference between the detection resistance and the preset resistance is greater than an error threshold, a bonding wire break exists in the bonding wire group.

4. The multi-bond wire test circuit according to claim 2, characterized in that: The invention comprises a first pin voltage difference measurement module, the first pin voltage difference measurement module comprises a first storage, a first current monitoring unit, a first voltage monitoring unit and a first judgment unit; the first pin voltage difference measurement module is connected to the internal switch circuit (9) and drives the internal switch circuit (9) to maintain an open circuit state; the first current monitoring unit detects a first pull-out current between the power pin and the first output drive pin (4); the first voltage monitoring unit detects a first detection voltage difference between the power pin (1) and an output pin; the first storage stores the number of bonding wires of a first bonding wire group connected to the power pin (1) and a preset resistance of a single bonding wire; the first judgment unit obtains a total detection resistance of the first bonding wire group according to the first detection voltage difference and the first pull-out current, and obtains a detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires; and obtains connection state information of the first bonding wire group connected to the power pin (1) by comparing the detection resistance with the preset resistance.

5. The multi-bond wire test circuit according to claim 4, characterized in that: Also includes: A second pin voltage difference measurement module, the second pin voltage difference measurement module comprising a second storage, a second current monitoring unit, a second voltage monitoring unit and a second judgment unit; the second pin voltage difference measurement module is connected to the internal switch circuit (9) and drives the internal switch circuit (9) to maintain a closed conductive state; the second current monitoring unit detects a second pull-out current between the power pin and the first output drive pin (4); the second voltage monitoring unit detects a second detection voltage difference between the first output drive pin (4) and the second output drive pin (7); the second storage stores the number of bonding wires of the second bonding wire group connected to the first output drive pin (4) and a preset resistance of a single bonding wire; the second judgment unit obtains a total detection resistance of the second bonding wire group according to the second detection voltage difference and the second pull-out current, and obtains a detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires; and obtains connection state information of the second bonding wire group connected to the first output drive pin (4) by comparing the detection resistance with the preset resistance.

6. The multi-bond wire test circuit according to claim 5, characterized in that: Also includes: A third pin voltage difference measurement module, the third pin voltage difference measurement module comprising a third storage, a third current monitoring unit, a third voltage monitoring unit and a third judgment unit; the third pin voltage difference measurement module is connected to the internal switch circuit (9) and drives the internal switch circuit (9) to maintain a closed conduction state; the third current monitoring unit detects a third pull-out current between the first output drive pin (4) and the ground pin (2); the third voltage monitoring unit detects a third detection voltage difference between the second output drive pin (4) and the ground pin (2); the third storage stores the number of bonding wires of the third bonding wire group connected to the ground pin (2) and a preset resistance of a single bonding wire; the third judgment unit obtains a total detection resistance of the third bonding wire group according to the third detection voltage difference and the third pull-out current, and obtains a detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires; and obtains connection state information of the third bonding wire group connected to the first output drive pin (4) by comparing the detection resistance with the preset resistance.

7. A multi-bond wire testing method, characterized in that: Using a chip including the multi-bond wire test circuit as claimed in claim 6, comprising the following steps: S100, when the internal switch circuit (9) is in an on state, obtaining a detection resistance of a single bonding wire according to a total detection resistance of a first bonding wire group connected to the power pin (1) and the number of bonding wires, and obtaining connection state information of the first bonding wire group by comparing the detection resistance with a preset resistance; S200, when the internal switch circuit (9) is in a closed state, obtaining a detection resistance of a single bonding wire according to a total detection resistance of a second bonding wire group connected to the first output drive pin (4) and the number of bonding wires, and obtaining connection state information of the second bonding wire group by comparing the detection resistance with a preset resistance; S300, when the internal switch circuit (9) is in a closed state, obtaining a detection resistance of a single bonding wire according to the total detection resistance of the third bonding wire group connected to the ground pin (2) and the number of bonding wires, and obtaining connection state information of the third bonding wire group by comparing the detection resistance with a preset resistance; and S400: When the difference between the detection resistance of each of the first bonding wire group, the second bonding wire group, and the third bonding wire group and the corresponding preset resistance is less than an error threshold, the chip passes the test.

8. The multi-bond wire testing method according to claim 7, characterized in that: The step S100 includes: S101, driving the internal switch circuit (9) to maintain an open circuit state; S102, detecting a first pull-out current between the power pin and the first output drive pin; S103, detecting a first detection voltage difference between the power pin and one of the output pins; S104, obtaining a detection total resistance of the first bonding wire group according to the first detection voltage difference and the first pull-out current; S105, obtaining a detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires; and S106. By comparing the detection resistance with the preset resistance, connection status information of the first bonding wire group connected to the power pin (1) is obtained; when the difference between the detection resistance and the preset resistance is less than an error threshold, the first bonding wire group is in a normal connection state; when the difference between the detection resistance and the preset resistance is greater than the error threshold, a bonding wire break exists in the first bonding wire group.

9. The multi-bond wire testing method according to claim 7, characterized in that: The step S200 includes: S201, driving the internal switch circuit (9) to maintain a closed conducting state; S202, detecting a second pull-out current between the power pin and the first output drive pin (4); S203, the second voltage monitoring unit detects a second detection voltage difference between the first output drive pin (4) and the second output drive pin (7); S204, the second judgment unit obtains a detected total resistance of the second bonding wire group according to the second detected voltage difference and the second pull-out current; S205, obtaining a detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires; and S206. By comparing the detection resistance with the preset resistance, connection status information of the second bonding wire group connected to the first output drive pin (4) is obtained; when the difference between the detection resistance and the preset resistance is less than an error threshold, the second bonding wire group is in a normal connection state; when the difference between the detection resistance and the preset resistance is greater than the error threshold, a bonding wire break exists in the second bonding wire group.

10. The multi-bond wire testing method according to claim 7, characterized in that: The step S300 includes: S301, driving the internal switch circuit (9) to maintain a closed conducting state; S302, detecting a third pull-out current between the first output drive pin (4) and the ground pin (2); S303, detecting a third detection voltage difference between the second output drive pin (4) and the ground pin (2); S304, obtaining a detection total resistance of the third bonding wire group according to the third detection voltage difference and the third pull-out current; S305, obtaining a detection resistance of a single bonding wire according to the total detection resistance and the number of bonding wires; and S306. By comparing the detection resistance with the preset resistance, the connection status information of the third bonding wire group connected to the ground pin (2) is obtained; when the difference between the detection resistance and the preset resistance is less than an error threshold, the third bonding wire group is in a normal connection state; when the difference between the detection resistance and the preset resistance is greater than the error threshold, a bonding wire break exists in the third bonding wire group.

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