Intermittent power-on endurance test device for high-voltage silicon stack

Abstract

The invention relates to a high-voltage silicon stack intermittent power-on endurance test device, which comprises a human-computer interface, a controller, a temperature module, a constant current source module and a silicon stack mounting seat, and is characterized in that the controller is electrically connected with the human-computer interface, the controller is electrically connected with the constant current source module, the constant current source module is electrically connected with the silicon stack mounting seat, and the temperature module is electrically connected with the controller; the high-voltage silicon stack is mounted on the silicon stack mounting seat, and the temperature module is connected to the high-voltage silicon stack through thermocouple monitoring. The device has the advantages that the controller is controlled by a PLC program, and automation of the control process is achieved; a human-computer interface is adopted, so that parameter setting is convenient, data are digitized, and reading, recording and storage are facilitated; the constant current source provides stable test current to ensure that test parameters are reliable and accurate; the sensing capability of the temperature module to the junction temperature of the chip and the control of temperature measurement, the lowest temperature and the highest temperature are stable; the silicon stack mounting seat is reasonable in structural design, ensures that the lead of the high-voltage silicon stack is quickly clamped and disassembled and is stably clamped, and prevents the problem of virtual connection in a test.

Description

Technical Field

[0001] The invention relates to the field of semiconductor chip testing equipment, and in particular to a high-voltage silicon stack intermittent power-on durability testing device. Background Art

[0002] The intermittent power-on durability test of high-voltage silicon stacks is a test used to evaluate the long-term stability and reliability of high-voltage silicon stacks under repeated power-on and power-off conditions. This test is crucial to ensure the performance of high-voltage silicon stacks in practical applications, especially in applications such as high-voltage DC power supplies, electric welders, and electrophoresis equipment.

[0003] There is currently no complete test-related equipment. Based on the current development and iteration of high-voltage silicon stacks, as well as higher usage requirements, a high-voltage silicon stack intermittent power-on durability test device has been developed. Through testing with this device, the chip quality and long life of the high-voltage silicon stack have been enriched with parameter data. Summary of the invention

[0004] In order to solve the above technical problems, the present invention proposes a high-voltage silicon stack intermittent power-on endurance test device, which has an ingenious design, a reasonable and compact structure, and meets the test requirements.

[0005] The technical solution of the present invention: A high-voltage silicon stack intermittent power-on durability test device comprises a human-machine interface, a controller, a temperature module, a constant current source module, and a silicon stack mounting seat. The controller is electrically connected to the human-machine interface, the controller is electrically connected to the constant current source module, the constant current source module is electrically connected to the silicon stack mounting seat, the temperature module is electrically connected to the controller, the high-voltage silicon stack is mounted on the silicon stack mounting seat, and the temperature module is connected to the high-voltage silicon stack through thermocouple monitoring.

[0006] The temperature module comprises a thermometer and a thermocouple. The thermometer is electrically connected to the thermocouple, and the thermocouple is fixed to the outside of the chip plastic package of the high-voltage silicon stack through a binding tape.

[0007] The constant current source module is a constant current source module that stably provides a current that is more than 10 times the rated current of the high-voltage silicon stack. The constant current source module is a device that outputs a constant current, and the current size is adjustable.

[0008] The silicon stack mounting seat comprises an insulating base, an electrode column, a sleeve, a spring, an upper clamping block, a lower clamping block and a screw. At least two electrode columns are mounted on the insulating base. A semicircular groove is provided on one side of each electrode column near the upper end. The electrode column at the upper end of the semicircular groove forms an upper clamping block. The lower clamping block is slidably located in the semicircular groove and there is a certain gap between the upper end of the lower clamping block and the inner side of the upper end of the semicircular groove. A threaded hole is designed on the outer side of the lower clamping block. The sleeve is a hollow hole in the middle and a closed upper end. A semicircular notch is provided on one side of the middle of the sleeve, which is connected to the hollow hole. A circular hole is provided on the sleeve below the half-moon notch. The sleeve is slidably sleeved on the upper end of the electrode column and a spring is supported and installed between the bottom of the hollow hole of the sleeve and the upper end of the electrode column. The screw passes through the circular hole of the sleeve and is screwed into the threaded hole of the lower clamping block.

[0009] The upper and lower heights of the semicircular groove are greater than the upper and lower heights of the semicircular notch; after the lower clamping block is fixed to the sliding sleeve by screws, the upper end of the lower clamping block is flush with the bottom of the semicircular notch.

[0010] A circular groove for positioning and clamping the lower end of the spring is arranged in the middle of the upper end of the electrode column.

[0011] The operating method of the high-voltage silicon stack intermittent power-on endurance test device is adopted. Step 1: First, install the high-voltage silicon stack to be tested on the silicon stack mounting seat, and fix the thermocouple of the temperature module to the outside of the chip plastic package of the high-voltage silicon stack through a strapping tape; Step 2: Set parameters on the human-machine interface: The constant current source module provides ≥10 times the rated current to the high-voltage silicon stack as the forward conduction current of the high-voltage silicon stack. After the silicon stack is turned on, it starts to heat up; Set the room temperature as the lowest temperature; add 110℃ to the room temperature and set it as the highest temperature; When the thermocouple detection temperature reaches the maximum temperature, the constant current source output is turned off, and the constant current source output is turned off until the temperature cools to room temperature. This cycle is repeated and the number of cycles is set to 5000 times. Step 3: Click on the human-machine interface to start the test. The human-machine interface transmits the command to the controller, and the controller controls the constant current source module and the temperature module to work respectively, and performs automatic testing until all the tests are completed and stop automatically.

[0012] During step three, once the high-voltage silicon stack is short-circuited or open-circuited under the action of high current, the high-voltage silicon stack is unqualified and will not generate heat. Once the temperature module monitors that the high-voltage silicon stack no longer generates temperature rise within a cycle, a signal is transmitted to the controller, and the controller controls the cycle test to stop, and the controller also controls the sound and light alarm to sound an alarm.

[0013] The advantages of the present invention are: 1. The controller adopts PLC program control to realize the automation of the control process; 2. HMI human-machine interface, convenient parameter setting, digital data, easy to read, record and save; 3. The constant current source provides a stable test current to ensure that the test parameters are reliable and accurate; 4. Temperature module, the ability to sense the junction temperature of the chip, and the precise control of temperature measurement, minimum temperature and maximum temperature; 5. The structure of the silicon stack mounting base is reasonably designed to ensure that the leads of the high-voltage silicon stack can be quickly connected and disassembled, and the connection is stable, effectively preventing the problem of false connection during the test. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a system schematic diagram of the present invention.

[0015] Figure 2 Schematic diagram of the silicon stack mounting base of the present invention.

[0016] Figure 3 It is a schematic cross-sectional view of the upper end of the electrode column of the silicon stack mounting base of the present invention. DETAILED DESCRIPTION

[0017] See attached Figure 1-3 A high-voltage silicon stack intermittent power-on durability test device includes a human-machine interface 1, a controller 2, a temperature module 3, a constant current source module 4, and a silicon stack mounting seat 5. The controller 2 is electrically connected to the human-machine interface 1, the controller 2 is electrically connected to the constant current source module 4, the constant current source module 4 is electrically connected to the silicon stack mounting seat 5, the temperature module 3 is electrically connected to the controller 2, the high-voltage silicon stack 6 is mounted on the silicon stack mounting seat 5, and the temperature module 3 is connected to the high-voltage silicon stack 6 through a thermocouple 32 for monitoring.

[0018] The temperature module 3 includes a thermometer 31 and a thermocouple 32 . The thermometer 31 is electrically connected to the thermocouple 32 . The thermocouple 32 is fixed to the outside of the chip plastic package of the high-voltage silicon stack 6 by a strapping tape.

[0019] The constant current source module 4 is a constant current source module 4 that stably provides a current that is more than 10 times the rated current of the high-voltage silicon stack 6 .

[0020] The silicon stack mounting base 5 comprises an insulating base 51, an electrode column 52, a sleeve 53, a spring 54, an upper clamping block 55, a lower clamping block 56, and a screw 57. At least two electrode columns 52 are mounted on the insulating base 51. A semicircular groove 521 is formed on one side of each electrode column 52 near the upper end. The electrode column 52 at the upper end of the semicircular groove 521 forms an upper clamping block 55. The lower clamping block 56 is slidably located in the semicircular groove 521, and a certain gap is formed between the upper end of the lower clamping block 56 and the inner side of the upper end of the semicircular groove 521. A threaded hole is designed on the outer side of the lower clamping block 56; the sliding sleeve 53 is a hollow hole in the middle and the upper end is closed, a semicircular notch 531 is opened on one side of the middle of the sliding sleeve 53, the semicircular notch 531 is connected to the hollow hole, and a round hole is opened on the sliding sleeve 53 below the half-moon notch; the sliding sleeve 53 is slidably sleeved on the upper end of the electrode column 52, and a spring 54 is supported and installed between the bottom of the hollow hole of the sliding sleeve 53 and the upper end of the electrode column 52, and the screw 57 passes through the round hole of the sliding sleeve 53 and is screwed into the threaded hole of the lower clamping block 56.

[0021] The upper and lower heights of the semicircular groove 521 are greater than the upper and lower heights of the semicircular notch 531 ; after the lower clamping block 56 is fixed to the sliding sleeve 53 by means of screws 57 , the upper end of the lower clamping block 56 is flush with the bottom of the semicircular notch 531 .

[0022] A circular groove is provided in the middle of the upper end of the electrode column 52 for positioning and clamping the lower end of the spring 54 .

[0023] The operating method of the intermittent power-on endurance test device of the high-voltage silicon stack 6 is adopted. Step 1: First, install the high-voltage silicon stack 6 to be tested on the silicon stack mounting seat 5, and fix the thermocouple 32 of the temperature module 3 to the outside of the chip plastic package of the high-voltage silicon stack 6 through a strapping tape; Step 2: Set parameters on the human-machine interface 1: The constant current source module 4 provides ≥10 times the rated current to the high voltage silicon stack 6; Set the room temperature as the lowest temperature; add 110℃ to the room temperature and set it as the highest temperature; When the temperature detected by the thermocouple 32 reaches the maximum temperature, the constant current source output is turned off, and the constant current source output is turned off until the temperature cools to room temperature, and the cycle is repeated, and the number of cycles is set to 5000; Step 3, the human-machine interface 1 clicks to start the test, and the human-machine interface 1 transmits the instruction to the controller 2, and the controller 2 controls the constant current source module 4 and the temperature module 3 to work respectively, and performs automatic testing until all the test times are completed and stop automatically.

[0024] During step three, once the high-voltage silicon stack is short-circuited or open-circuited under the action of high current, the high-voltage silicon stack is unqualified and will not generate heat. Once the temperature module monitors that the high-voltage silicon stack no longer generates temperature rise within a cycle, a signal is transmitted to the controller, and the controller controls the cycle test to stop, and the controller also controls the sound and light alarm to sound an alarm.

[0025] When the present invention is used, 1. The controller adopts PLC program control to realize the automation of the control process; 2. HMI human-machine interface, convenient parameter setting, digital data, easy to read, record and save; 3. The constant current source provides a stable test current (900mA) to ensure that the test parameters are reliable and accurate; 4. Temperature module, the ability to sense the junction temperature of the chip, and the precise control of temperature measurement and minimum temperature of 20.0° and maximum temperature of 130.0°; This device energizes the high-voltage silicon stack with a rated current value ≥10 times to make it heat up. It starts heating from room temperature 20°C → the surface temperature reaches (20°C+110°C)130°C →> turn off the constant current source output and naturally cool to 20°C (1 cycle); a total of 5000 cycles are performed. After the above 5000 times of large current shocks, 110° temperature difference changes, and repeated on-off tests, it is ensured that the high-voltage silicon stack does not break down or short-circuit. The high-voltage silicon stack intermittent power-on durability test device is a newly developed high-voltage silicon stack reliability test device, the first of its kind in China. This invention is mainly used for reliability testing of high-voltage silicon stacks, and adds an important physical indicator to the high-temperature resistance performance parameters of high-voltage silicon stacks.

Claims

1. High-voltage silicon stack intermittent power-on durability test device, characterized in that: It includes a human-machine interface, a controller, a temperature module, a constant current source module, and a silicon stack mounting base. The controller is electrically connected to the human-machine interface, the controller is electrically connected to the constant current source module, the constant current source module is electrically connected to the silicon stack mounting base, the temperature module is electrically connected to the controller, the high-voltage silicon stack is mounted on the silicon stack mounting base, and the temperature module is connected to the high-voltage silicon stack through thermocouple monitoring.

2. The high-voltage silicon stack intermittent power-on durability test device according to claim 1, characterized in that: The temperature module comprises a thermometer and a thermocouple. The thermometer is electrically connected to the thermocouple, and the thermocouple is fixed to the outside of the chip plastic package of the high-voltage silicon stack through a binding tape.

3. The high voltage silicon stack intermittent power-on durability test device according to claim 1, characterized in that: The constant current source module is a constant current source module that stably provides a current that is more than 10 times the rated current of the high-voltage silicon stack.

4. The high voltage silicon stack intermittent power-on durability test device according to claim 1, characterized in that: The silicon stack mounting seat comprises an insulating base, an electrode column, a sleeve, a spring, an upper clamping block, a lower clamping block and a screw. At least two electrode columns are mounted on the insulating base. A semicircular groove is provided on one side of each electrode column near the upper end. The electrode column at the upper end of the semicircular groove forms an upper clamping block. The lower clamping block is slidably located in the semicircular groove and there is a certain gap between the upper end of the lower clamping block and the inner side of the upper end of the semicircular groove. A threaded hole is designed on the outer side of the lower clamping block. The sleeve is a hollow hole in the middle and a closed upper end. A semicircular notch is provided on one side of the middle of the sleeve, which is connected to the hollow hole. A circular hole is provided on the sleeve below the half-moon notch. The sleeve is slidably sleeved on the upper end of the electrode column and a spring is supported and installed between the bottom of the hollow hole of the sleeve and the upper end of the electrode column. The screw passes through the circular hole of the sleeve and is screwed into the threaded hole of the lower clamping block.

5. The high-voltage silicon stack intermittent power-on durability test device according to claim 4, characterized in that: The upper and lower heights of the semicircular groove are greater than the upper and lower heights of the semicircular notch; after the lower clamping block is fixed to the sliding sleeve by screws, the upper end of the lower clamping block is flush with the bottom of the semicircular notch.

6. The high-voltage silicon stack intermittent power-on durability test device according to claim 4, characterized in that: A circular groove for positioning and clamping the lower end of the spring is arranged in the middle of the upper end of the electrode column.

7. The high voltage silicon stack intermittent power-on durability test device according to claim 1, characterized in that: An audible and visual alarm is also arranged on the human-machine interface, and the controller is electrically connected to the audible and visual alarm.

8. The high-voltage silicon stack intermittent power-on durability test device according to any one of claims 1 to 7, characterized in that: The operating method of the high-voltage silicon stack intermittent power-on endurance test device is adopted. Step 1: First, install the high-voltage silicon stack to be tested on the silicon stack mounting seat, and fix the thermocouple of the temperature module to the outside of the chip plastic package of the high-voltage silicon stack through a strapping tape; Step 2: Set parameters on the human-machine interface: The constant current source module provides ≥10 times the rated current to the high voltage silicon stack; Set the room temperature as the lowest temperature; add 110℃ to the room temperature and set it as the highest temperature; When the thermocouple detection temperature reaches the maximum temperature, the constant current source output is turned off, and the constant current source output is turned off until the temperature cools to room temperature. This cycle is repeated and the number of cycles is set to 5000 times. Step 3: Click on the human-machine interface to start the test. The human-machine interface transmits the command to the controller, and the controller controls the constant current source module and the temperature module to work respectively, and performs automatic testing until all the tests are completed and stop automatically.

9. The high-voltage silicon stack intermittent power-on durability test device according to any one of claim 8, characterized in that: During step three, once the high-voltage silicon stack is short-circuited or open-circuited under the action of high current, the high-voltage silicon stack is unqualified and will not generate heat. Once the temperature module monitors that the high-voltage silicon stack no longer generates temperature rise within a cycle, a signal is transmitted to the controller, and the controller controls the cycle test to stop, and the controller also controls the sound and light alarm to sound an alarm.

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