Semiconductor laser and method for manufacturing the same

Abstract

The present application discloses a semiconductor laser and a method for preparing the same, wherein the semiconductor laser comprises: a bar submodule, each bar submodule comprises a P-side sub-heat sink, a P-side composite layer, a bar chip, an N-side composite layer and an N-side sub-heat sink arranged in sequence from bottom to top, wherein the P-side composite layer is provided with a first supplementary layer, a first solder layer and a second supplementary layer in sequence from bottom to top, and the N-side composite layer is provided with a third supplementary layer, a second solder layer and a fourth supplementary layer in sequence from bottom to top, the first supplementary layer comprises a first supplementary area, the fourth supplementary layer comprises a fourth supplementary area, and the first supplementary area and the fourth supplementary area are complementary in shape in the horizontal direction. The semiconductor laser and the method for preparing the same disclosed in the present application effectively improve the smile effect of the bar chip, improve the performance of the semiconductor laser, help with beam collimation, shaping and beam combining, extend the life of the device, and improve the reliability of the semiconductor laser; the structure is simple, no additional process is required, and the cost is controllable.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a semiconductor laser and a method for manufacturing the same. Background Art

[0002] Semiconductor bar lasers have the characteristics of high power. The bar chip is a series of single light-emitting points connected in parallel. The high-power bar chip in the 750nm~1100nm band uses GaAs as the substrate material, and the light output power can reach more than 200W. It is generally formed by reflow soldering through solder and heat sink welding.

[0003] The smile effect refers to the phenomenon that the light-emitting points in a bar laser are not on the same straight line. Currently, macro-channel array lasers usually use bar submodules as subunits. Bar submodules generally reduce the smile effect by setting sub-heat sinks on both sides of the bar. However, in practice, the structure with sub-heat sinks still has a smile of about 2μm. The smile effect will seriously affect the beam quality of semiconductor lasers, increase the difficulty of beam collimation, shaping and combining, and greatly limit the yield and application of bar submodule lasers. Summary of the invention

[0004] In order to solve one or more of the above problems, the present application proposes a semiconductor laser and a method for manufacturing the same.

[0005] According to one aspect of the present application, a semiconductor laser is provided, including a bar submodule,

[0006] Each bar module includes a P-side sub-heat sink, a P-side composite layer, a bar chip, an N-side composite layer and an N-side sub-heat sink arranged in sequence from bottom to top.

[0007] The P-side composite layer is provided with a first supplementary layer, a first solder layer, and a second supplementary layer in sequence from bottom to top, and the N-side composite layer is provided with a third supplementary layer, a second solder layer, and a fourth supplementary layer in sequence from bottom to top.

[0008] The first supplementary layer includes a first supplementary area, and the fourth supplementary layer includes a fourth supplementary area. The first supplementary area and the fourth supplementary area are complementary in shape in a horizontal direction.

[0009] According to another aspect of the present application, a method for preparing a semiconductor laser is provided, which is used to prepare any of the above semiconductor lasers, comprising the following steps:

[0010] A P-side sub-heat sink, a P-side composite layer, a bar chip, an N-side composite layer and an N-side sub-heat sink are sequentially arranged from bottom to top, wherein a first supplementary layer, a first solder layer and a second supplementary layer are sequentially arranged from bottom to top on the P-side composite layer, and a third supplementary layer, a second solder layer and a fourth supplementary layer are sequentially arranged from bottom to top on the N-side composite layer, the first supplementary layer includes a first supplementary area, the fourth supplementary layer includes a fourth supplementary area, and the first supplementary area and the fourth supplementary area are complementary in shape in the horizontal direction;

[0011] The above structure is subjected to one-time reflow soldering.

[0012] The semiconductor laser and its preparation method disclosed in the present application, by respectively arranging a P-side composite layer and an N-side composite layer on both sides of the bar, effectively improve the smile effect caused by the asymmetry of the gold-plated layer of the bar chip and the intrinsic smile of the bar, can reduce the smile of the semiconductor laser to one tenth, improve the performance of the semiconductor laser, help light beam collimation, shaping and beam combining, extend the life of the device, and improve the reliability of the semiconductor laser; the structure is simple, no additional process is required, and the cost is controllable. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 A schematic diagram of the structure of a semiconductor laser provided in one embodiment of the present application.

[0014] Figure 2 A schematic diagram of the structure of a P-face composite layer in a semiconductor laser provided in one embodiment of the present application.

[0015] Figure 3 A bottom view of a P-side composite layer in a semiconductor laser provided in one embodiment of the present application.

[0016] Figure 4 A schematic diagram of the structure of an N-side composite layer in a semiconductor laser provided in an embodiment of the present application.

[0017] Figure 5 A top view of an N-side composite layer in a semiconductor laser provided in an embodiment of the present application. DETAILED DESCRIPTION

[0018] In order to make the purpose, technical scheme and advantages of the present invention clearer, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are part of the embodiments of the present invention, rather than all of the embodiments, and are only used to explain the present invention, and are not used to limit the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0019] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "front", "back", "vertical", "horizontal", "inner", "outer", "two ends", "both sides", "bottom", "top" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred elements must have a specific orientation or be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "superior", "inferior", "primary", "secondary" and the like are only used for descriptive purposes and can be simply used to more clearly distinguish different components, but cannot be understood as indicating or implying relative importance.

[0020] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, an integral connection, a mechanical connection, an electrical connection, a direct connection, an indirect connection through an intermediate medium, or the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0021] In addition, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0022] Embodiment 1:

[0023] Reference Manual Attached Figure 1-5 The embodiment of the present invention provides a semiconductor laser. The semiconductor laser includes at least one bar submodule. Each bar submodule includes a P-side sub-heat sink 1, a P-side composite layer 2, a bar chip 3, an N-side composite layer 4 and an N-side sub-heat sink 5 arranged in sequence from bottom to top.

[0024] Among them, the P-side sub-heat sink 1 and the N-side sub-heat sink 5 can both use W90Cu, a low CTE and high thermal conductivity material, and specifically can use diamond-copper, graphite-copper, molybdenum-copper, aluminum nitride copper clad laminate and diamond copper clad laminate.

[0025] The thickness of the Au layer on the surface of the P-side sub-heat sink 1 ranges from 0.1 μm to 2 μm. In the present embodiment, the thickness of the Au layer on the surface of the P-side sub-heat sink 1 is 0.5 μm.

[0026] The thickness of the Au layer on the surface of the N-side sub-heat sink 5 is in the range of 0.1 μm to 2 μm. In the present embodiment, the thickness of the Au layer on the surface of the N-side sub-heat sink 5 is 0.5 μm.

[0027] The laser bar chip of GaAs substrate can be used as the bar chip 3. The thickness of the Au layer on the P side of the bar chip 3 is in the range of 1-10 μm, and the thickness of the Au layer on the N side of the bar chip 3 is in the range of 0.2-1 μm.

[0028] In this embodiment, the thickness of the Au layer on the P side of the bar chip 3 is 4 μm, and the thickness of the Au layer on the N side of the bar chip 3 is in the range of 0.5 μm.

[0029] The P-side composite layer 2 is provided with a first supplementary layer 21, a first solder layer 22 and a second supplementary layer 23 in sequence from bottom to top, and the N-side composite layer 4 is provided with a third supplementary layer 41, a second solder layer 42 and a fourth supplementary layer 43 in sequence from bottom to top.

[0030] The first solder layer 22 and the second solder layer 42 can both be made of Au 80 Sn hard solder.

[0031] The cross-sectional shapes of the second supplementary layer 23 and the third supplementary layer 41 in the horizontal direction are the same as the cross-sectional shape of the bar chip 3 in the horizontal direction.

[0032] The first supplementary layer 21 includes a first supplementary area 211 and a second supplementary area 212, and the fourth supplementary layer 43 includes a third supplementary area 431 and a fourth supplementary area 432. The cross-sectional shapes of the first supplementary area 211 and the fourth supplementary area 432 in the horizontal direction are complementary, the cross-sectional shapes of the first supplementary area 211 and the second supplementary area 212 in the horizontal direction are complementary, and the cross-sectional shapes of the third supplementary area 431 and the fourth supplementary area 432 in the horizontal direction are complementary.

[0033] The fourth supplementary area 432 is arranged at the center of the fourth supplementary layer 43, that is, the center of the fourth supplementary area 432 coincides with the center of the fourth supplementary layer 43. Figure 5 As shown, the fourth supplementary area 432 is a rectangle, the first side 433 and the second side 434 of the fourth supplementary area 432 respectively overlap with the two long sides of the fourth supplementary layer 43, the distance between the third side 435 of the fourth supplementary area 432 and the short side of the adjacent fourth supplementary layer 43 is 1 / 6-1 / 3 of the length of the bar chip, and the distance between the fourth side 436 of the fourth supplementary area 432 and the short side of the adjacent fourth supplementary layer is 1 / 6-1 / 3 of the length of the bar chip. In the fourth supplementary layer 43, the area other than the fourth supplementary area 432 is the third supplementary area 431, that is, the two sides of the fourth supplementary area 432 together constitute the third supplementary area 431.

[0034] Similarly, refer to the instruction manual Figure 3 As shown, the second supplementary area 212 is a rectangle, and the areas on both sides of the second supplementary area 212 together constitute the first supplementary area 211 .

[0035] The cross-sectional shape of the first supplementary area 211 in the horizontal direction is the same as the cross-sectional shape of the third supplementary area 431 in the horizontal direction, and the cross-sectional shape of the second supplementary area 212 in the horizontal direction is the same as the cross-sectional shape of the fourth supplementary area 432 in the horizontal direction.

[0036] In the process of preparing the semiconductor laser, when the solder in the first solder layer 22 and the second solder layer 42 melts, it will dissolve Au in the surface of the bar chip 3, the surface of the N-side sub-heat sink 5, the surface of the P-side sub-heat sink 1, the first supplementary layer 21, the second supplementary layer 23, the third supplementary layer 41 and the fourth supplementary layer 43 to form liquid solder. The composition of the liquid solder can be expressed as Au x The value range of Sn,x can be not less than 75 and not more than 85, thereby ensuring the fluidity of the liquid solder and avoiding the occurrence of empty soldering.

[0037] Liquid Solder Au x In Sn, the expression of x is as follows:

[0038]

[0039] In the formula, Indicates the Au layer thickness on the P-side sub-heat sink and N-side sub-heat sink surface, Indicates the Au layer thickness on the N or P side of the bar chip. Indicates the proportion of Au in the solder, represents the total thickness of the Sn layer in all supplementary layers, Represents the total thickness of the Au layer in all the supplementary layers.

[0040] In an optional embodiment, the materials of the second reinforcement layer 23 and the third reinforcement layer 41 can both be Au or Sn.

[0041] The thickness of the second supplementary layer 23 and the third supplementary layer 41 satisfies the following relationship:

[0042]

[0043] In the formula, Indicates the thickness of Au layer on the P side of the bar chip. represents the thickness of the Au layer in the second supplementary layer, represents the thickness of the Sn layer in the second supplementary layer, Indicates the thickness of Au layer on the N side of the bar chip, represents the thickness of the Au layer in the third supplementary layer, represents the thickness of the Sn layer in the third supplementary layer, Indicates the thickness of the Au layer on the P-side sub-heat sink surface, Indicates the thickness of the Au layer on the N-side sub-heat sink surface, Indicates the proportion of Au in the solder, represents the thickness of the first solder layer, Indicates the thickness of the second solder layer.

[0044] In the above relationship, , , , , , and All are known data, so we can get , , and The relationship expression between , thereby, the relationship between the material and thickness of the second reinforcement layer 23 and the third reinforcement layer 41 can be obtained.

[0045] In an optional embodiment, the material of the second supplementary layer 23 is Sn, and the thickness of the second supplementary layer is 1.0 μm. In this case, the thickness of the third supplementary layer 41 may be 0.

[0046] In an optional embodiment, the material of the third supplementary layer 41 is Au, and the thickness of the third supplementary layer 41 is 3.5 μm. In this case, the thickness of the second supplementary layer 23 may be 0.

[0047] When the material of the second supplementary layer 23 is Sn, the thickness of the second supplementary layer 23 may be in the range of 0-2 μm. When the material of the third supplementary layer 41 is Au, the thickness of the third supplementary layer 41 may be in the range of 0-10 μm.

[0048] Therefore, by setting the second supplementary layer 23 and the third supplementary layer 41, the effect of adding more Sn to the P side of the bar chip or adding more Au to the N side of the bar chip is achieved, so that the proportion of Au in the liquid solder on the P side and the N side of the bar chip is basically the same, so that the liquid solder can solidify at the same time, effectively improving the smile effect caused by the asymmetry of the gold-plated layer of the bar chip.

[0049] The bar chip is affected by the epitaxial layer, metal layer and etching groove, and generally has an intrinsic smile of -1μm~-10μm. The intrinsic smile of the bar chip generally has the characteristics of P concave and N convex. The intrinsic smile will force the molten solder to flow, causing the composition and melting point differences of the molten pool on the same side in the horizontal direction. The melting point difference of the molten pool on the same side will aggravate the smile effect.

[0050] Due to the influence of the intrinsic smile of the bar chip, the solder will be squeezed and flowed in the early stage of melting, resulting in changes in the initial liquid solder thickness in different areas, that is, the solder in the middle of the P side increases and the solder on both sides decreases, and the solder in the middle of the N side decreases and the solder on both sides increases. As a result, after the Au layer of the bar chip, the Au layer in the N-side sub-heat sink and the P-side sub-heat sink, as well as the second and third supplementary layers are fully dissolved, the liquid solder composition in different areas on the same side becomes different.

[0051] The height difference of the intrinsic smile of the bar chip is recorded as , and the first supplementary layer 21 and the fourth supplementary layer 43 are respectively divided into two areas along the length direction of the bar chip 3.

[0052] Specifically, the bar chip 3 is in the shape of a long strip, and its horizontal cross section is a rectangle. The length of the bar chip 3 is denoted as L, and the width is denoted as M.

[0053] The fourth supplementary area 432 is arranged at the center of the fourth supplementary layer 43, that is, the center of the fourth supplementary area 432 coincides with the center of the fourth supplementary layer 43. Figure 5 As shown, the fourth supplementary area 432 is a rectangle, the first side 433 and the second side 434 of the fourth supplementary area 432 respectively coincide with the two long sides of the fourth supplementary layer 43, the distance between the third side 435 of the fourth supplementary area 432 and the short side of the adjacent fourth supplementary layer 43 is 1 / 6-1 / 3 of the length L of the bar chip, and the distance between the fourth side 436 of the fourth supplementary area 432 and the short side of the adjacent fourth supplementary layer is 1 / 6-1 / 3 of the length L of the bar chip. In the fourth supplementary layer 43, the area other than the fourth supplementary area 432 is the third supplementary area 431, that is, the two sides of the fourth supplementary area 432 together constitute the third supplementary area 431.

[0054] Taking the P side of the bar chip 3 as an example, since the solder thickness of the first supplementary area 211 is reduced, the Au content in the area corresponding to the first supplementary area 211 will be higher than the Au content in the area corresponding to the second supplementary area 212. Therefore, it is necessary to add Sn to the first supplementary area 211, or to add Au to the second supplementary area 212, or to add Sn to the first supplementary area 211 and to add Au to the second supplementary area 212 at the same time. The situation of the N side of the bar chip 3 is the opposite, and it is necessary to add Au to the third supplementary area 431, or to add Sn to the fourth supplementary area 432, or to add Au to the third supplementary area 431 and to add Sn to the fourth supplementary area 432 at the same time.

[0055] In an optional embodiment, when the material of the second supplementary layer 23 is Sn and the material of the third supplementary layer 41 is Au, the thickness of each region in the first supplementary layer 21 satisfies the following relationship:

[0056]

[0057] In the formula, represents the thickness of Sn in the first supplementary region in the first supplementary layer, represents the thickness of Au in the first supplementary layer in the region other than the first supplementary region, Indicates the thickness of Au layer on the P side of the bar chip. represents the thickness of the Sn layer in the second supplementary layer, Indicates the thickness of the Au layer on the P-side sub-heat sink surface, Indicates the proportion of Au in the solder, represents the average thickness of the initial liquid solder in the edge area of ​​the P surface after being squeezed by the chip bar, and the edge area of ​​the P surface is the area corresponding to the first supplementary area 211, It represents the average thickness of the initial liquid solder in the central area of ​​the P surface after being squeezed by the chip bar, and the central area of ​​the P surface is the area corresponding to the second supplementary area 212.

[0058] The initial liquid solder in the edge area and the center area of ​​the P surface includes the second supplementary layer 23, the first solder layer 22, the P surface Au layer of the bar chip 3 and the Au layer in the P surface sub-heat sink.

[0059] Since the average height difference of the bar chips corresponding to the first supplementary area 211 and the second supplementary area 212 is 0.5 times ,but and Satisfies the following relationship,

[0060]

[0061] in, Indicates the height difference of the intrinsic smile of the bar chip. Indicates the thickness of the first solder layer.

[0062] In an optional embodiment, when the material of the second supplementary layer 23 is Sn and the material of the third supplementary layer 41 is Au, the thickness of each region in the fourth supplementary layer 43 satisfies the following relationship:

[0063]

[0064] In the formula, represents the thickness of Au in the non-fourth supplementary area in the fourth supplementary layer, represents the thickness of Sn in the region of the fourth supplementary zone in the fourth supplementary layer, Indicates the thickness of Au layer on the N side of the bar chip, represents the thickness of the Au layer in the third supplementary layer, Indicates the thickness of the Au layer on the N-side sub-heat sink surface, Indicates the proportion of Au in the solder, represents the average thickness of the initial liquid solder in the central area of ​​the N surface after being squeezed by the chip bar, and the central area of ​​the N surface is the area corresponding to the fourth supplementary area 432, It represents the average thickness of the initial liquid solder in the edge area of ​​the N surface after being squeezed by the chip bar. The edge area of ​​the N surface is the area corresponding to the third supplementary area 431.

[0065] The initial liquid solder in the edge region and the center region of the N-side includes the third supplementary layer 41 , the second solder layer 42 , the Au layer on the N-side of the bar chip 3 , and the Au layer in the N-side secondary heat sink.

[0066] Since the average height difference of the bar chips corresponding to the third supplementary area 431 and the fourth supplementary area 432 is 0.5 times ,but and Satisfies the following relationship,

[0067]

[0068] in, Indicates the height difference of the intrinsic smile of the bar chip. Indicates the thickness of the second solder layer.

[0069] In an optional embodiment, when the thickness of the second supplementary layer 23 is 0 and the thickness of the third supplementary layer 41 is 3.5μm, the material of the first supplementary zone 211 is Sn with a thickness of 0.1μm, and the thickness of the second supplementary zone 212 is 0, or the material of the second supplementary zone 212 is Au with a thickness of 0.6μm, and the thickness of the first supplementary zone 211 is 0.

[0070] The material of the third supplementary region 431 is Au with a thickness of 0.6 μm, and the thickness of the fourth supplementary region 432 is 0 at this time; or the material of the fourth supplementary region 432 is Sn with a thickness of 0.1 μm, and the thickness of the third supplementary region 431 is 0 at this time.

[0071] In an optional embodiment, the total thickness of the P-side composite layer is in a range of 7 to 25 μm, and the total thickness of the N-side composite layer is in a range of 7 to 25 μm.

[0072] The thickness range of the first supplementary area 211 and the fourth supplementary area 432 is 0-1 μm, and the thickness range of the second supplementary area 212 and the third supplementary area 431 is 0-2 μm.

[0073] The semiconductor laser disclosed in the present application effectively improves the smile effect caused by the asymmetry of the gold-plated layer of the bar chip and the intrinsic smile of the bar by arranging a P-face composite layer and an N-face composite layer on both sides of the bar respectively, and can reduce the smile of the semiconductor laser to one tenth, thereby improving the performance of the semiconductor laser, facilitating light beam collimation, shaping and beam combining, extending the life of the device, and improving the reliability of the semiconductor laser; the structure is simple, no additional process is required, and the cost is controllable.

[0074] Embodiment 2:

[0075] The embodiment of the present invention also provides a method for preparing a semiconductor laser, which is used to prepare any semiconductor laser in the above embodiment, comprising the following steps:

[0076] A P-side sub-heat sink, a P-side composite layer, a bar chip, an N-side composite layer and an N-side sub-heat sink are sequentially arranged from bottom to top, wherein a first supplementary layer, a first solder layer and a second supplementary layer are sequentially arranged from bottom to top on the P-side composite layer, and a third supplementary layer, a second solder layer and a fourth supplementary layer are sequentially arranged from bottom to top on the N-side composite layer, the first supplementary layer includes a first supplementary area, the fourth supplementary layer includes a fourth supplementary area, and the first supplementary area and the fourth supplementary area are complementary in shape in the horizontal direction;

[0077] The above structure is subjected to one-time reflow soldering.

[0078] The features of this embodiment that are the same as those of Embodiment 1 are not described in detail here.

[0079] The preparation method of the semiconductor laser disclosed in the present application effectively improves the smile effect caused by the asymmetry of the gold-plated layer of the bar chip and the intrinsic smile of the bar by respectively arranging a P-side composite layer and an N-side composite layer on both sides of the bar, and can reduce the smile of the semiconductor laser to one tenth, thereby improving the performance of the semiconductor laser, facilitating light beam collimation, shaping and beam combining, extending the life of the device, and improving the reliability of the semiconductor laser; the structure is simple, no additional process is required, and the cost is controllable.

[0080] The above is only an optional implementation of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications should also be regarded as the scope of protection of the present application.

Claims

1. A semiconductor laser, characterized in that Including the bar submodule, Each of the bar submodules includes a P-side sub-heat sink, a P-side composite layer, a bar chip, an N-side composite layer and an N-side sub-heat sink arranged in sequence from bottom to top. The P-side composite layer is provided with a first supplementary layer, a first solder layer, and a second supplementary layer in sequence from bottom to top, and the N-side composite layer is provided with a third supplementary layer, a second solder layer, and a fourth supplementary layer in sequence from bottom to top. The first supplementary layer comprises a first supplementary area, the fourth supplementary layer comprises a fourth supplementary area, and the first supplementary area and the fourth supplementary area are complementary in shape in a horizontal direction; The fourth supplementary area is arranged at the center of the fourth supplementary layer, the material of the first supplementary area is Sn, the material of the area other than the first supplementary area in the first supplementary layer is Au, the material of the fourth supplementary area is Sn, and the material of the area other than the fourth supplementary area in the fourth supplementary layer is Au; The material of the second supplementary layer is Au or Sn, and the material of the third supplementary layer is Au or Sn; The thicknesses of the second supplementary layer and the third supplementary layer satisfy the following relationship: In the formula, Indicates the thickness of Au layer on the P side of the bar chip. represents the thickness of the Au layer in the second supplementary layer, represents the thickness of the Sn layer in the second supplementary layer, Indicates the thickness of Au layer on the N side of the bar chip, represents the thickness of the Au layer in the third supplementary layer, represents the thickness of the Sn layer in the third supplementary layer, Indicates the thickness of the Au layer on the P-side sub-heat sink surface, Indicates the thickness of the Au layer on the N-side sub-heat sink surface, Indicates the proportion of Au in the solder, represents the thickness of the first solder layer, Indicates the thickness of the second solder layer.

2. The semiconductor laser according to claim 1, characterized in that The first supplementary layer further includes a second supplementary area, and the fourth supplementary layer further includes a third supplementary area. The first supplementary area and the second supplementary area are complementary in shape, and the third supplementary area and the fourth supplementary area are complementary in shape.

3. The semiconductor laser according to claim 1, characterized in that When the material of the second supplementary layer is Sn, the thickness of the second supplementary layer is 0-2 μm.

4. The semiconductor laser according to claim 1, characterized in that When the material of the third supplementary layer is Au, the thickness of the third supplementary layer is 0-10 μm.

5. The semiconductor laser according to claim 1, characterized in that When the material of the second supplementary layer is Sn, the thickness of each region in the first supplementary layer satisfies the following relationship: In the formula, represents the thickness of Sn in the first supplementary region in the first supplementary layer, represents the thickness of Au in the first supplementary layer in the region other than the first supplementary region, Indicates the thickness of Au layer on the P side of the bar chip. represents the thickness of the Sn layer in the second supplementary layer, Indicates the thickness of the Au layer on the P-side sub-heat sink surface, Indicates the proportion of Au in the solder, It represents the average thickness of the initial liquid solder in the edge area of ​​the P surface after the chip is squeezed by the bar. The edge area of ​​the P surface is the area corresponding to the first supplementary area. It represents the average thickness of the initial liquid solder in the central area of ​​the P surface after being squeezed by the bar chip, the central area of ​​the P surface is the area outside the area corresponding to the first supplementary area, and the initial liquid solder in the edge area of ​​the P surface and the initial liquid solder in the central area of ​​the P surface include the second supplementary layer, the first solder layer, the Au layer of the P surface of the bar chip and the Au layer in the secondary heat sink of the P surface; and Satisfies the following relationship, in, Indicates the inherent smile of the bar chip, Indicates the thickness of the first solder layer.

6. The semiconductor laser according to claim 1, characterized in that When the material of the third supplementary layer is Au, the thickness of each region in the fourth supplementary layer satisfies the following relationship: In the formula, represents the thickness of Au in the non-fourth supplementary area in the fourth supplementary layer, represents the thickness of Sn in the region of the fourth supplementary zone in the fourth supplementary layer, Indicates the thickness of Au layer on the N side of the bar chip, represents the thickness of the Au layer in the third supplementary layer, Indicates the thickness of the Au layer on the N-side sub-heat sink surface, Indicates the proportion of Au in the solder, It indicates the average thickness of the initial liquid solder in the center area of ​​the N surface after being squeezed by the chip bar. The center area of ​​the N surface is the area corresponding to the fourth supplementary area. represents the average thickness of the initial liquid solder in the edge area of ​​the N surface after being squeezed by the bar chip, the edge area of ​​the N surface is the area outside the area corresponding to the fourth supplementary area, and the initial liquid solder in the edge area of ​​the N surface and the initial liquid solder in the center area of ​​the N surface include the third supplementary layer, the second solder layer, the Au layer on the N surface of the bar chip and the Au layer in the N surface secondary heat sink; and Satisfies the following relationship, in, Indicates the inherent smile of the bar chip, Indicates the thickness of the second solder layer.

7. The semiconductor laser according to claim 1, characterized in that The fourth supplementary area is a rectangle, the first side and the second side of the fourth supplementary area coincide with the two long sides of the fourth supplementary layer respectively, the distance between the third side of the fourth supplementary area and the short side of the adjacent fourth supplementary layer is 1 / 6-1 / 3 of the length of the bar chip, and the distance between the fourth side of the fourth supplementary area and the short side of the adjacent fourth supplementary layer is 1 / 6-1 / 3 of the length of the bar chip.

8. A method for preparing a semiconductor laser, for preparing the semiconductor laser according to any one of claims 1 to 7, characterized in that: The following steps are involved: A P-side sub-heat sink, a P-side composite layer, a bar chip, an N-side composite layer and an N-side sub-heat sink are sequentially arranged from bottom to top, wherein a first supplementary layer, a first solder layer and a second supplementary layer are sequentially arranged from bottom to top on the P-side composite layer, and a third supplementary layer, a second solder layer and a fourth supplementary layer are sequentially arranged from bottom to top on the N-side composite layer, wherein the first supplementary layer includes a first supplementary area, and the fourth supplementary layer includes a fourth supplementary area, and the first supplementary area and the fourth supplementary area are complementary in shape in the horizontal direction; Perform one-time reflow soldering.

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