Gating device material and memory

Abstract

The invention provides a gating device material and a memory. The gating device material comprises a base material and a doping material. The base material comprises a Ge element, a Se element and an As element. The doping material comprises an In element and an Si element. The In element and the Si element are doped with a base material comprising a Ge element, an Se element and an As element at the same time, so that the threshold voltage drift problem of a gating device comprising the gating device material is solved, and the reliability of a memory and a storage system is improved.

Description

Technical Field

[0001] The present application relates to the field of storage technology, and in particular to a gating device material and a memory. Background Art

[0002] At present, the commercialized phase change memory usually adopts the 1S1R architecture, which includes a selector and a memory device. The selector plays a decisive role in correctly selecting the address and reducing the leakage current of the memory device. However, as the use time of the phase change memory increases, an important problem of the selector is that its turn-on voltage will drift, affecting the reliability of the phase change memory.

[0003] Therefore, it is necessary to propose a technical solution to improve the drift problem of the threshold voltage of the gating device. Summary of the invention

[0004] The present application provides a gating device material and a memory, which improve the threshold voltage drift problem of a gating device including the gating device material and improve the reliability of the memory.

[0005] In a first aspect, the present application provides a gating device material, the gating device material comprising:

[0006] A matrix material, the matrix material comprising Ge, Se and As elements; and

[0007] Doping material, the doping material includes In element and Si element.

[0008] In some embodiments, in the gating device material, the atomic number percentage of the In element is greater than 0% and less than or equal to 10%, and the atomic number percentage of the Si element is greater than 0% and less than or equal to 10%.

[0009] In some embodiments, in the gating device material, the atomic number percentage of the In element is greater than or equal to 0.01% and less than or equal to 5%, and the atomic number percentage of the Si element is greater than or equal to 0.01% and less than or equal to 10%.

[0010] In some embodiments, in the gating device material, the atomic number percentage of the Ge element is greater than or equal to 5% and less than or equal to 30%, the atomic number percentage of the Se element is greater than or equal to 30% and less than or equal to 70%, and the atomic number percentage of the As element is greater than or equal to 10% and less than or equal to 50%.

[0011] In some embodiments, the chemical formula of the gating device material is (Ge x Se y As z ) 1-m-nIn m Si n , m represents the percentage of the number of atoms of the In element, n represents the percentage of the number of atoms of the Si element, x / y / z represents the ratio of the number of atoms of Ge, Se and As, 0.01%≤m≤10%, 0.01%≤Si≤10%, 5%≤x≤25%, 30%≤y≤70%, 10%≤z≤40%.

[0012] In some embodiments, the gating device material includes (Ge 10 Se 68 As 22 ) 90 In 9.9 Si 0.1 、(Ge 10 Se 68 As 22 ) 90 In5Si5 and (Ge 10 Se 68 As 22 ) 90 In 0.1 Si 9.9 At least one of .

[0013] In a second aspect, the present application provides a memory, including:

[0014] a first electrode;

[0015] a second electrode; and

[0016] The gating device material layer is disposed between the first electrode and the second electrode and includes the gating device material of any of the above embodiments.

[0017] In some embodiments, the thickness of the gating device material layer is greater than or equal to 3 nanometers and less than or equal to 100 nanometers; the first electrode and the second electrode include at least one of a metal material and a non-metallic conductive material.

[0018] In some embodiments, the memory further comprises:

[0019] a phase change material layer, disposed between the gating device material layer and the first electrode; and

[0020] The third electrode is arranged between the phase change material layer and the gating device material layer.

[0021] In some embodiments, the phase change material layer includes a chalcogenide element.

[0022] In the gating device materials and memories of some embodiments of the present application, In elements and Si elements are simultaneously doped into a matrix material including Ge elements, Se elements and As elements, and the In elements and Si elements work synergistically to improve the threshold voltage drift problem of the gating device including the gating device material, thereby improving the reliability of the memory. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 A schematic diagram of the structure of a memory in some embodiments of the present application;

[0024] Figure 2 A schematic diagram of the structure of a memory in some other embodiments of the present application;

[0025] Figure 3 A schematic diagram of the structure of a memory according to some other embodiments of the present application;

[0026] Figure 4 A schematic diagram of the structure of a memory according to some other embodiments of the present application;

[0027] Figure 5 A block diagram of a storage system according to some embodiments of the present application;

[0028] Figure 6 The voltage-current (VI) test results of the gating devices of Comparative Examples 1 to 4 measured under voltage excitation;

[0029] Figure 7 The voltage-current (VI) test results of the gating devices of Examples 1 to 3 and Comparative Examples 1 to 2 measured under voltage excitation;

[0030] Figure 8 These are the test results of the turn-on voltage drift of the gating devices of Examples 1 to 3 and Comparative Examples 1 to 4.

[0031] The reference numerals are as follows:

[0032] 100, memory; 300, storage system; 200, controller;

[0033] 10, storage unit; 11, base layer; 12, insulating layer; 121, groove; 13, first electrode; 131, columnar contact portion; 132, lead portion; 14, second electrode; 15, gating device material layer;

[0034] 231, first bit line; 232, second bit line; 241, first word line; 242, second word line; 251, first storage unit; 252, second storage unit; 26, third electrode; 27, phase change material layer;

[0035] 31, first conductor; 32, second conductor; 33, dielectric layer;

[0036] z, first direction; x, second direction; y, third direction. DETAILED DESCRIPTION

[0037] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0038] Please refer to Figure 1 As shown, it is a schematic diagram of the structure of the memory of some embodiments of the present application. Figure 1 As shown, the memory 100 includes a base layer 11 and a storage layer disposed on the base layer 11. The storage layer includes a plurality of storage cells 10. Figure 1 A memory cell 10 in the memory 100 is schematically shown for convenience of description. The memory cell 10 includes a first electrode 13 , a gating device material layer 15 and a second electrode 14 .

[0039] The base layer 11 may include a semiconductor layer. The base layer 11 may also include a functional film layer disposed on the semiconductor layer. The functional film layer includes at least one of an insulating layer and a conductive layer. The semiconductor layer may include semiconductor materials such as silicon or germanium.

[0040] The memory 100 further includes an insulating layer 12, which is disposed on one side of the base layer 11. The insulating layer 12 includes insulating materials such as silicon oxide, silicon nitride or silicon oxynitride. Specifically, the insulating layer 12 includes silicon oxide.

[0041] The first electrode 13 is embedded in the insulating layer 12. The first electrode 13 may include a columnar contact portion 131 and a lead portion 132 connected to the columnar contact portion 131. The extension direction of the columnar contact portion 131 intersects with the extension direction of the lead portion 132. The columnar contact portion 131 extends along the thickness direction of the insulating layer 12. The columnar contact portion 131 may be cylindrical or rectangular. The lead portion 132 may be cylindrical or rectangular. The first electrode 13 includes at least one of a metal material and a non-metallic conductive material. The metal material includes but is not limited to at least one of tungsten, titanium, titanium nitride, silver, gold, copper and aluminum. The non-metallic material includes but is not limited to at least one of amorphous carbon, carbon nanotubes and graphene.

[0042] The length of the columnar contact 131 is greater than or equal to 1 nanometer and less than or equal to 200 nanometers. Thus, the length of the columnar contact 131 is small, so that the thickness of the gate device layer can be small, which is conducive to increasing the number of gate device layers, thereby increasing the storage capacity of the memory 100.

[0043] The gate device material layer 15 is disposed on the side of the insulating layer 12 away from the base layer 11, and contacts the columnar contact portion 131 of the first electrode 13. The gate device material layer 15 is in a layered state. The thickness of the gate device material layer 15 is greater than or equal to 3 nanometers and less than or equal to 100 nanometers. In this way, the thickness of the gate device material layer 15 is relatively thin, so that the thickness of the gate device layer is relatively small, which is conducive to increasing the number of layers of the gate device layer, thereby increasing the storage capacity of the memory 100.

[0044] The second electrode 14 is disposed on a side of the gate device material layer 15 that is away from the base layer 11. The second electrode 14 is in a layered shape.

[0045] The thickness of the second electrode 14 is greater than or equal to 1 nanometer and less than or equal to 200 nanometers. Thus, the second electrode 14 is thinner, so that the thickness of the gate device layer is smaller, which is beneficial to increase the number of gate device layers to increase the storage capacity of the memory 100.

[0046] The second electrode 14 includes at least one of a metal material and a non-metallic conductive material. The metal material includes but is not limited to at least one of tungsten, titanium, titanium nitride, silver, gold, copper and aluminum. The non-metallic material includes but is not limited to at least one of amorphous carbon, carbon nanotubes and graphene.

[0047] for Figure 1 The memory cell 10 shown is used as a memory cell of the memory 100. Voltages are applied to the first electrode 13 and the second electrode 14 respectively, and the voltage difference between the first electrode 13 and the second electrode 14 is greater than the turn-on voltage of the gate device material layer 15, and the memory cell 10 is turned on.

[0048] Please refer to Figure 2 As shown, it is a schematic diagram of the structure of the memory of other embodiments of the present application. Figure 2 The memory 100 is shown with Figure 1 The memory 100 shown is basically similar, and the similarities are not repeated here, and the differences include that the insulating layer 12 includes a groove 121, and the groove 121 is sunken from the surface of the insulating layer 12 away from the base layer 11 to the base layer 11. In the case where the insulating layer 12 includes the groove 121, a portion of the gating device material layer 15 disposed on the side of the insulating layer 12 away from the base layer 11 is also located in the groove 121. Figure 2 The size of the storage unit 10 can be defined by the groove.

[0049] Please refer to Figure 3 , which is a schematic diagram of the structure of a memory of some other embodiments of the present application. The memory includes a storage layer, the storage layer includes a plurality of storage cells 10, each storage cell 10 includes a first electrode 13, a gating device material layer 15 and a second electrode 14 arranged in a stacked manner. The first electrode 13 is connected to a first wire 31, and the second electrode 14 is connected to a second wire 32. The dielectric layer 33 is arranged on the side wall of the storage cell 10 to protect the storage cell 10.

[0050] Please refer to Figure 4 As shown, it is a schematic diagram of the structure of the memory of some other embodiments of the present application. Figure 4 The memory 100 shown includes a first bit line 231, a first word line 241, a first storage unit 251, a second word line 242, a second bit line 232, and a second storage unit 252. The first storage unit 251 is disposed between the first bit line 231 and the first word line 241. The second storage unit 252 is disposed between the second word line 242 and the second bit line 232. The first storage unit 251 and the second storage unit 252 are stacked along a first direction x. The first word line 241 and the second word line 242 are disposed adjacent to each other in the first direction x, and are located between the first storage unit 251 and the second storage unit 252, and extend along the second direction x. The first bit line 231 and the second bit line 232 extend along a third direction y. In the first direction z, the first bit line 231 is located on a side of the first storage unit 251 away from the second storage unit 252, and the second bit line 232 is located on a side of the second storage unit 252 away from the first storage unit 251. The first direction x, the second direction y, and the third direction z intersect.

[0051] Each of the first memory cell 251 and the second memory cell 252 includes a first electrode 13, a second electrode 14, a gate device material layer 15, a phase change material layer 27, and a third electrode 26. The gate device material layer 15 is disposed between the first electrode 13 and the second electrode 14. The phase change material layer 27 is disposed between the gate device material layer 15 and the first electrode 13, and the third electrode 26 is disposed between the phase change material layer 27 and the gate device material layer 15.

[0052] In some embodiments, the phase change material layer 27 may include a chalcogenide element. In some embodiments, the phase change material layer 27 may include a phase change matrix material, and the phase change matrix material includes at least one of Ge, Te, and Sb, but is not limited thereto. In some implementations, the phase change material layer 27 may also include a doping material to improve the performance of the phase change material layer 27. The doping material includes but is not limited to at least one of In element, Sn element, C element, Si element, C element, and N element.

[0053] exist Figure 4In the memory 100 shown, the phase change material layer 27 is used as a storage layer to store data, and the gate device material layer 15 is used as a switch to achieve the correct addressing of the memory cell and reduce the leakage current of the memory cell.

[0054] for Figures 1 to 4 In the memory 100 shown, the stability of the threshold voltage of the gate device material layer 15 will affect the performance stability of the memory cell.

[0055] The present application provides a gating device material for a gating device material layer 15. The gating device material includes a base material and a doping material. The base material includes Ge, Se, and As. The doping material includes In and Si. In this way, the In and Si elements cooperate to improve the drift problem of the threshold voltage (also called the turn-on voltage) of the gating device material layer 15, thereby improving the reliability of the memory 100.

[0056] In the gating device material, the atomic number percentage of the Ge element is greater than or equal to 5% and less than or equal to 30%. Optionally, the atomic number percentage of the Ge element may be greater than or equal to 5% and less than or equal to 28%, greater than or equal to 8% and less than or equal to 25%, greater than or equal to 10% and less than or equal to 25%, greater than or equal to 12% and less than or equal to 20%, greater than or equal to 15% and less than or equal to 30%, or greater than or equal to 5% and less than or equal to 15%.

[0057] In some embodiments, in the gating device material, the atomic number percentage of Se element is greater than or equal to 30% and less than or equal to 70%. Optionally, the atomic number percentage of Se element is greater than or equal to 30% and less than or equal to 65%, greater than or equal to 35% and less than or equal to 60%, greater than or equal to 40% and less than or equal to 55%, greater than or equal to 45% and less than or equal to 55%, greater than or equal to 50% and less than or equal to 70%, or greater than or equal to 30% and less than or equal to 45%.

[0058] In some embodiments, in the gating device material, the atomic number percentage of the As element is greater than or equal to 10% and less than or equal to 50%. Optionally, the atomic number percentage of As is greater than or equal to 10% and less than or equal to 48%, greater than or equal to 12% and less than or equal to 45%, greater than or equal to 15% and less than or equal to 40%, greater than or equal to 20% and less than or equal to 35%, greater than or equal to 10% and less than or equal to 30%, or greater than or equal to 15% and less than or equal to 30%.

[0059] In some embodiments, in the gating device material, the atomic percentage of the In element is greater than 0% and less than or equal to 10%, and the atomic percentage of the Si element is greater than 0% and less than or equal to 10%. In this way, the atomic percentage of the Si element is within a suitable range, which reduces the difficulty of the deposition process of the gating device material including the Si element, and reduces the difficulty of achieving etching uniformity of the gating device material including the Si element, and optimizes the process of realizing the gating device material containing the Si element. The atomic percentage of the In element is within a suitable range, which improves the threshold voltage reduction of the gating device material layer 15 and reduces the off-state leakage current of the gating device material layer 15.

[0060] Optionally, the atomic number percentage of the In element is greater than 0% and less than or equal to 9%. Optionally, the atomic number percentage of the In element is greater than or equal to 0.001% and less than or equal to 8.5%. Optionally, the atomic number percentage of the In element is greater than or equal to 0.01% and less than or equal to 5%. Optionally, the atomic number percentage of the In element is greater than or equal to 0.1% and less than or equal to 4.5%. Optionally, the atomic number percentage of the In element is greater than or equal to 0.5% and less than or equal to 4.2%. Optionally, the atomic number percentage of the In element is greater than or equal to 5.1% and less than or equal to 10%.

[0061] Exemplarily, the atomic number percentage of the In element is 0.001%, 0.005%, 0.008%, 0.01%, 0.05%, 0.08%, 0.1%, 0.15%, 0.18%, 0.2%, 0.25%, 0.28%, 0.3%, 0.35%, 0.38%, 0.4%, 0.45%, 0.48%, 0.5%, 0.55%, 0.58%, 0.6%, 0.65%, 0.68%, 0.7%, 0.75%, 0.78%, 0.8%, 0.85%, 0.88%, 0.9%, 0.95%, 0.98%, 1%, 1.5%, 1.8%, 2%, 2.5%, 2.8%, 3%, 3.5%, 3.8%, 4%, 4.5%, 4.8%, 5%, 5.5%, 5.8%, 6%, 6.5%, 6.8%, 7%, 7.5%, 7.8%, 8%, 8.5%, 8.8%, 9%, 9.5% or 9.8%.

[0062] Optionally, the atomic number percentage of Si element is greater than 0% and less than or equal to 9%. Optionally, the atomic number percentage of Si element is greater than or equal to 0.001% and less than or equal to 8.5%. Optionally, the atomic number percentage of Si element is greater than or equal to 0.01% and less than or equal to 6.5%. Optionally, the atomic number percentage of Si element is greater than or equal to 0.01% and less than or equal to 5%. Optionally, the atomic number percentage of Si element is greater than or equal to 0.1% and less than or equal to 4.8%. Optionally, the atomic number percentage of Si element is greater than or equal to 5.1% and less than or equal to 10%. Optionally, the atomic number percentage of Si element is greater than or equal to 5% and less than or equal to 10%. Optionally, the atomic number percentage of Si element is greater than or equal to 0% and less than or equal to 6%.

[0063] Exemplarily, the atomic number percentage of Si element is 0.001%, 0.005%, 0.008%, 0.01%, 0.05%, 0.08%, 0.1%, 0.15%, 0.18%, 0.2%, 0.25%, 0.28%, 0.3%, 0.35%, 0.38%, 0.4%, 0.45%, 0.48%, 0.5%, 0.55%, 0.58%, 0.6%, 0.65%, 0.68%, 0.7%, 0.75%, 0.78%, 0.8%, 0.85%, 0.88%, 0.9%, 0.95%, 0.98%, 1%, 1.5%, 1.8%, 2%, 2.5%, 2.8%, 3%, 3.5%, 3.8%, 4%, 4.5%, 4.8%, 5%, 5.5%, 5.8%, 6%, 6.5%, 6.8%, 7%, 7.5%, 7.8%, 8%, 8.5%, 8.8%, 9%, 9.5% or 9.8%.

[0064] In some embodiments, in the gating device material, the sum of the atomic number percentage of the In element and the atomic number percentage of the Si element is less than or equal to 10%. In this way, the atomic number percentage of the In element and the atomic number percentage of the Si element are both small, which improves the threshold voltage drift problem of the gating device material layer 15, is also conducive to optimizing the manufacturing process of the gating device material containing the Si element, and reduces the risk of reducing the threshold voltage of the gating device material layer 15.

[0065] In some embodiments, the atomic percentage of the In element is less than the atomic percentage of the Si element. In this way, while improving the threshold voltage drift problem of the gating device material layer 15, the atomic percentage of the In element is smaller, which is beneficial to reducing the threshold voltage of the gating device material layer 15 and reducing the risk of increased off-state leakage current.

[0066] In other embodiments, the atomic percentage of the In element is greater than the atomic percentage of the Si element. In this way, while improving the threshold voltage drift problem of the gate device material layer 15, the atomic percentage of the Si element is reduced, which is beneficial to optimizing the manufacturing process of the gate device material containing the Si element and improving the yield of the memory 100 including multiple gate device material layers 15.

[0067] In some embodiments, the chemical formula of the gating device material is (Ge x Se y As z ) 1-m-n In m Si n , m represents the percentage of the number of atoms of the In element, n represents the percentage of the number of atoms of the Si element, x / y / z represents the ratio of the number of atoms of Ge, Se and As, x+y+z=100%; 0.01%≤m≤10%, 0.01%≤Si≤10%, 5%≤x≤25%, 30%≤y≤70%, 10%≤z≤40%

[0068] In some embodiments, the gating device material includes (Ge 10 Se 68 As 22 ) 90 In 9.9 Si 0.1 、(Ge 10 Se 68 As 22 ) 90 In5Si5 and (Ge 10 Se 68 As 22 ) 90 In 0.1 Si 9.9 At least one of .

[0069] In some embodiments, the method for preparing the gating device material may include:

[0070] Providing a first target material, a second target material and a third target material, wherein the first target material includes Ge, Se and As elements, the second target material includes In element, and the third target material includes Si element;

[0071] The gating device material is formed by using a first target material, a second target material and a third target material.

[0072] In some embodiments, the method for preparing the gating device material may include:

[0073] providing a fourth target material, wherein the fourth target material includes Ge, Se, As, In and Si; and

[0074] The gating device material is formed by using a fourth target material.

[0075] like Figure 5 As shown, the present application also provides a storage system 300, which includes a memory 100 and a controller 200. The controller 200 is connected to the memory 100 and is used to control the memory 100 to implement data writing, erasing and reading.

[0076] In summary, for the gating device material and memory provided in the present application, the In element and the Si element are simultaneously doped with the matrix material including the Ge element, the Se element and the As element, and the In element and the Si element cooperate to improve the threshold voltage drift problem of the gating device including the gating device material, and improve the reliability of the memory and the storage system. Moreover, the simultaneous doping of the In element and the Si element makes the composition adjustment of the gating device material more flexible and controllable to meet the different performance requirements of the memory. In addition, the composition of the gating device material is more flexible and controllable, which can also reduce production risks and expand the selection of phase change materials for phase change material layers that can be used for large-scale production.

[0077] The performance of the gating device material of the present application is verified below in combination with specific embodiments and comparative examples.

[0078] The structures of the gating devices of Examples 1 to 3 and Comparative Examples 1 to 4 are as follows: Figure 1 The compositions of the gate device materials of the gate devices of Examples 1 to 3 and Comparative Examples 1 to 4 are shown in Table 1.

[0079] Table 1

[0080] Composition of gating device materials Example 1 <![CDATA[(Ge 10 it 68 Ace 22 ) 90 In 9.9 And 0.1 ]]> Example 2 <![CDATA[(Ge 10 To 68 Ace 22 ) 90 In5Si5]]> Example 3 <![CDATA[(Ge 10 it 68 Ace 22 ) 90 In 0.1 And 9.9 ]]> Comparative Example 1 <![CDATA[Ge 10 To 68 Ace 22 ]]> Comparative Example 2 <![CDATA[(Ge 10 Se 68 As 22 ) 99.9 In 0.1 ]]> Comparative Example 3 <![CDATA[(Ge 10 Se 68 As 22 ) 95 In5]]> Comparative Example 4 <![CDATA[(Ge 10 Se 68 As 22 ) 90 In 10 ]]>

[0081] The voltage-current (VI) test results of the gating devices of Comparative Examples 1 to 4 under voltage excitation are as follows: Figure 6 As shown, the voltage-current (VI) test results of the gating devices of Examples 1 to 3 and Comparative Examples 1 to 2 under voltage excitation are as follows: Figure 7 shown. Figure 6 and Figure 7 In FIG. 1 , the voltage on the abscissa represents the difference between the voltages applied to the first electrode and the second electrode. Figure 6 and Figure 7 The unit of the horizontal axis is V, and the unit of the vertical axis is An (A).

[0082] Among them, Figure 6 and Figure 7 In the figure, line 101A is the VI curve of the gating device of comparative example 1 when the voltage is increased, and line 101B is the VI curve of the gating device of comparative example 1 when the voltage is decreased. Line 102A is the VI curve of the gating device of comparative example 2 when the voltage is increased, and line 102B is the VI curve of the gating device of comparative example 2 when the voltage is decreased. Line 103A is the VI curve of the gating device of comparative example 3 when the voltage is increased, and line 103B is the VI curve of the gating device of comparative example 3 when the voltage is decreased. Line 104A is the VI curve of the gating device of comparative example 4 when the voltage is increased, and line 104B is the VI curve of the gating device of comparative example 4 when the voltage is decreased. Line 201A is the VI curve of the gating device of embodiment 1 when the voltage is increased, and line 201B is the VI curve of the gating device of embodiment 1 when the voltage is decreased. Line 202A is the VI curve of the gating device of Example 2 when the voltage increases, and line 202B is the VI curve of the gating device of Example 2 when the voltage decreases. Line 203A is the VI curve of the gating device of Example 3 when the voltage increases, and line 203B is the VI curve of the gating device of Example 3 when the voltage decreases.

[0083] exist Figure 6 and Figure 7 In the example, as the voltage increases, the current value first increases continuously, and at a certain point, the current value suddenly jumps, and then continues to increase. The point where the current value jumps is the threshold point of the gating device, and the voltage at this point is the threshold voltage of the gating device.

[0084] Combination Figure 6 It can be seen that when the voltage applied to the gating device is 2V, the gating device is in the off state and the gating device has leakage current. As the percentage of the number of atoms of the In element increases, the leakage current of the gating device under the action of the 2V voltage increases. Therefore, in the case where only the In element is doped into the GeSeAs substrate, as the percentage of the number of atoms of the In element increases, the off-state leakage current of the gating device will increase.

[0085] Combination Figure 7 It can be seen that when the voltage applied to the gating device is 2V, the Si element and the In element are doped into the GeSeAs substrate at the same time, and as the percentage of the number of atoms of the Si element increases, the leakage current of the gating device under the voltage of 2V will not change significantly. Therefore, when the In element and the Si element are doped into the GeSeAs substrate at the same time, as the Si element content increases, the leakage current of the gating device will not increase significantly, that is, the problem of increased leakage current is improved.

[0086] like Figure 8As shown, it is the test results of the turn-on voltage drift of the gating devices of Comparative Examples 1 to Comparative Examples 4 and Examples 1 to Examples 3. Among them, the test conditions of the turn-on voltage drift include: (1) applying two consecutive first pulses and second pulses, and controlling the time interval between the two pulses, and collecting the threshold voltage of the gating device through the second pulse, wherein the first pulse is a turn-on pulse to turn the device on once and serve as the starting point of the threshold drift test, and the second pulse is a reading pulse; (2) setting different time intervals for the same gating device to test the threshold voltage; (3) fitting the collected threshold voltage and interval time to obtain Figure 8 A data point in Figure 8 (4) Each embodiment collects a large number of resistance drift parameters of the unit and performs statistics to obtain Figure 8 The statistical value at the top is representative (eg, 38.5 for Comparative Example 1).

[0087] The drift value of the turn-on voltage of the gating device of comparative example 1 is 38.5 mV / dec, the drift value of the turn-on voltage of the gating device of comparative example 2 is 17.3 mV / dec, the drift value of the turn-on voltage of comparative example 3 is 31.9 mV / dec, and the drift value of the turn-on voltage of comparative example 4 is 42.5 mV / dec. The drift value of the turn-on voltage of the gating device of embodiment 1 is 21.1 mV / dec. The drift value of the turn-on voltage of the gating device of embodiment 2 is 22.2 mV / dec. The drift value of the turn-on voltage of the gating device of embodiment 3 is 11.9 mV / dec.

[0088] According to the drift values ​​of the turn-on voltage of Comparative Examples 1 to 4, it can be seen that doping the GeSeAs substrate with a certain atomic percentage of In elements can reduce the drift value of the turn-on voltage of the gating device. Moreover, in the case where only the In element is doped into the GeSeAs substrate, as the atomic percentage of the In element increases, the drift value of the turn-on voltage of the gating device gradually increases.

[0089] According to the drift values ​​of the turn-on voltages of Comparative Example 1 and Examples 1 to 3, when the GeSeAs substrate is doped with both In and Si elements, the drift value of the turn-on voltage of the gating device can also be reduced. Moreover, when the content of In element is low and the content of Si element is high, the drift value of the turn-on voltage of the gating device can be more significantly reduced.

[0090] The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application. Ordinary technical personnel in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents. However, these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A gating device material, characterized in that: The gating device material includes: A matrix material, the matrix material comprising Ge, Se and As elements; and Doping material, the doping material includes In element and Si element.

2. The gating device material according to claim 1, characterized in that: In the gating device material, the atomic number percentage of the In element is greater than 0% and less than or equal to 10%, and the atomic number percentage of the Si element is greater than 0% and less than or equal to 10%.

3. The gating device material according to claim 2, characterized in that: In the gate device material, the atomic number percentage of the In element is greater than or equal to 0.01% and less than or equal to 5%, and the atomic number percentage of the Si element is greater than or equal to 0.01% and less than or equal to 10%.

4. The gating device material according to claim 1, characterized in that: In the gating device material, the atomic number percentage of Ge element is greater than or equal to 5% and less than or equal to 30%, the atomic number percentage of Se element is greater than or equal to 30% and less than or equal to 70%, and the atomic number percentage of As element is greater than or equal to 10% and less than or equal to 50%.

5. The gating device material according to any one of claims 1 to 4, characterized in that: The chemical formula of the gating device material is (Ge x Se y As z ) 1-m-n In m Si n , m represents the percentage of the number of atoms of the In element, n represents the percentage of the number of atoms of the Si element, x / y / z represents the ratio of the number of atoms of Ge, Se and As, 0.01%≤m≤10%, 0.01%≤Si≤10%, 5%≤x≤25%, 30%≤y≤70%, 10%≤z≤40%.

6. The gating device material according to claim 1, characterized in that: The gating device material includes (Ge 10 Se 68 As 22 ) 90 In 9.9 Si 0.1 、(Ge 10 Se 68 As 22 ) 90 In5Si5 and (Ge 10 Se 68 As 22 ) 90 In 0.1 Si 9.9 At least one of .

7. A memory, characterized in that: include: a first electrode; a second electrode; as well as The gating device material layer is disposed between the first electrode and the second electrode, and comprises the gating device material according to any one of claims 1 to 6.

8. The memory according to claim 7, characterized in that: The thickness of the gating device material layer is greater than or equal to 3 nanometers and less than or equal to 100 nanometers; the first electrode and the second electrode include at least one of a metal material and a non-metallic conductive material.

9. The memory according to claim 7, characterized in that: The memory also includes: a phase change material layer, disposed between the gating device material layer and the first electrode; and The third electrode is arranged between the phase change material layer and the gating device material layer.

10. The memory according to claim 9, characterized in that: The phase change material layer includes a chalcogenide element.

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