Semiconductor laser processing method and device

Abstract

The invention discloses a semiconductor laser processing method and device, comprising step S1, pre-treating the surface of a diamond blank, coating a layer of optical enhancement material, and acquiring surface morphology data; step S2, identifying a surface undulation area according to the morphology data; step S3, performing surface regulation processing on the surface undulation area by using preset laser parameters; step S4, cutting and processing by using a laser beam to form a diamond substrate; step S5, performing appearance inspection after cutting, and classifying according to the inspection result; by coating the optical absorption enhancement material on the surface of the diamond blank, the absorption efficiency of the material to the laser is significantly improved, and by using three-dimensional laser scanning and surface regulation processing, the microscopic undulations on the surface of the diamond blank are fully considered, the laser processing uniformity is improved, the cutting accuracy and surface quality of the processing process are improved, and high-quality laser processing of the polycrystalline diamond substrate is realized.

Description

Technical Field

[0001] The present invention relates to the field of laser processing technology, and in particular to a semiconductor laser processing method and device. Background Art

[0002] As a new type of functional material, diamond substrates are widely used in high-power electronic devices, microwave radio frequency devices, optoelectronic devices and other fields due to their unique physical properties such as ultra-high hardness, excellent thermal conductivity, wide bandgap and high electron mobility. In these high-end applications, the processing quality of diamond substrates directly affects the performance and reliability of the devices. Therefore, how to process diamond substrates with high precision and high quality has become the focus of the industry.

[0003] At present, laser processing of diamond substrates mainly adopts the traditional laser direct writing cutting method, that is, directly using a high-power laser beam to cut the diamond substrate. However, due to the low absorption rate of diamond materials to lasers, it is difficult for laser energy to effectively act on the inside of the material, resulting in low cutting efficiency and poor processing quality. In addition, there are microscopic fluctuations on the surface of the diamond substrate, which are not effectively detected and compensated in traditional laser processing, resulting in uneven cutting depth and poor surface quality during the processing, affecting the performance of the final product.

[0004] In view of this, there is a need to address the technical problem that the existing technology lacks accurate measurement of the surface morphology of the diamond substrate and targeted process control, so as to solve the technical problem that it cannot meet the needs of high-quality processing. Summary of the invention

[0005] The object of the present invention is to provide a semiconductor laser processing method and device to solve the above technical problems.

[0006] To achieve this object, the present invention adopts the following technical solutions:

[0007] The present invention provides a semiconductor laser processing method, comprising:

[0008] Step S1, pre-treating the surface of the diamond blank, coating a layer of optical enhancement material, and continuously scanning the surface of the diamond blank using a three-dimensional laser scanning device to obtain surface morphology data;

[0009] Step S2, identifying the surface undulation areas according to the topography data, and calculating the average height value of each area as an initial reference value;

[0010] Step S3, for the surface undulation area, using preset laser parameters to perform surface regulation processing to optimize the material's absorption characteristics of laser energy;

[0011] Step S4, cutting the diamond blank after the control treatment according to a predetermined cutting trajectory using a laser beam to form a diamond substrate, monitoring the temperature and state of the processing area in real time during the process, and dynamically adjusting the laser parameters according to the monitoring results;

[0012] Step S5, after the cutting is completed, the processed diamond substrate is inspected for appearance and classified according to the inspection results.

[0013] Optionally, the step S1 specifically includes:

[0014] Step S11, cleaning the surface of the diamond blank by ultrasonic cleaning with ethanol or acetone solution to remove oil, impurities and dust on the surface for 10-15 minutes;

[0015] Step S12, placing the cleaned diamond blank in a vacuum environment and performing plasma surface activation treatment, the treatment gas is argon, the gas pressure is 10-20 Pa, and the treatment time is 5-10 minutes;

[0016] Step S13, uniformly coating a layer of optical absorption enhancing material on the surface of the activated diamond blank by physical vapor deposition; wherein the optical absorption enhancing material is a nanoscale metal oxide film with a thickness of 20-100 nanometers, and the metal oxide film is selected from one or more of zinc oxide, tin oxide or titanium oxide.

[0017] Optionally, after step S13, the following steps are further included:

[0018] Step S14, drying and curing the diamond blank coated with the optical absorption enhancing material at a temperature of 150-200° C. for 30-60 minutes, so that the optical absorption enhancing material forms a stable adhesion layer on the surface of the diamond blank;

[0019] Step S15, continuously scanning the surface of the pre-treated diamond blank using a three-dimensional laser scanning device to obtain surface morphology data;

[0020] Step S16, storing and preliminarily processing the acquired topographic data, wherein the preliminarily processing includes data filtering, noise elimination and coordinate calibration.

[0021] Optionally, the step S2 specifically includes:

[0022] Step S21, importing the acquired topographic data into a data processing module, extracting a set of three-dimensional coordinate points on the surface of the diamond blank from the topographic data, reflecting the microscopic undulation characteristics of the surface;

[0023] Step S22, based on the three-dimensional coordinate point set, a least squares plane fitting method is used to establish a reference reference plane on the surface of the diamond blank, which is used to measure the relative height deviation of each three-dimensional coordinate point;

[0024] Step S23, calculating the height deviation of each three-dimensional coordinate point relative to the reference datum plane to obtain a surface height deviation distribution map;

[0025] Step S24, performing threshold segmentation processing on the height deviation distribution map, setting a height deviation threshold Δh, and when the absolute value of the height deviation of continuous data points in a certain area is greater than Δh, marking the corresponding area as a surface undulation area.

[0026] Optionally, after step S23, the following steps are further included:

[0027] Step S25, using a clustering algorithm to segment the marked surface undulation area, and classifying adjacent height deviation data points that meet the conditions into the same type of undulation area;

[0028] Step S26, for each identified surface undulation area, calculate the average height deviation value of all data points therein, specifically, average the height deviation values ​​of all data points in the corresponding surface undulation area relative to the reference datum plane to obtain its average height value as the initial reference value.

[0029] Optionally, the step S3 specifically includes:

[0030] Step S31, formulating a corresponding surface control scheme according to the average height value of each surface undulation area, setting corresponding control targets for areas with different height deviations, so as to optimize the absorption characteristics of the diamond blank to the laser energy;

[0031] Step S32, setting preset laser parameters for each surface undulation region, wherein the laser parameters include laser wavelength, laser power, pulse width and repetition frequency, specifically:

[0032] The laser wavelength is selected as 355 nanometer ultraviolet laser;

[0033] The laser power was set to 0.5-5 watts, adjusted according to the height deviation of the surface relief area;

[0034] The pulse width was set to 10-50 nanoseconds;

[0035] The repetition rate was set to 10-100 kHz;

[0036] Step S33, using the set laser parameters and laser micro-nano structure processing technology, each surface undulation area is subjected to surface control processing, and the laser beam is controlled to scan the surface undulation area according to a predetermined scanning path to form a periodic micro-nano structure on the surface of the diamond blank.

[0037] Optionally, the step S4 specifically includes:

[0038] Step S41, formulating a cutting trajectory according to the design requirements and size specifications of the diamond blank, and importing the formulated cutting trajectory into a numerical control module of a laser processing system;

[0039] Step S42, setting parameters for the laser cutting equipment, wherein the laser of the laser cutting equipment is an ultrafast pulse laser;

[0040] Step S43, fixing the diamond blank after the adjustment process on a workbench by vacuum adsorption or mechanical clamping;

[0041] Step S44, using a high-precision laser alignment system, align the focus of the laser beam with the cutting starting point on the diamond blank, make the laser beam path consistent with the predetermined cutting trajectory, start the laser cutting program, and control the laser beam to cut the diamond blank according to the predetermined cutting trajectory.

[0042] Optionally, after step S44, the following steps may be further performed:

[0043] Step S45, during the cutting process, an infrared thermometer is used or the temperature of the processing point is measured to monitor the temperature information of the processing area in real time, and an online machine vision system is used to detect the cutting groove width, surface quality and slag discharge of the cutting groove to monitor the status information of the processing area in real time;

[0044] Step S46, dynamically adjusting the laser parameters according to the real-time monitored temperature information and state information, and continuously adjusting the laser parameters until the cutting process is completed to form a diamond substrate that meets the design requirements.

[0045] The present invention also provides a semiconductor laser processing device for implementing the semiconductor laser processing method as described above, the laser processing device comprising:

[0046] A surface pretreatment module, including a cleaning component, an activation component and a coating unit, is used to pretreat the surface of the diamond blank and coat a layer of optical enhancement material;

[0047] 3D laser scanning equipment, used to continuously scan the surface of diamond blanks and obtain surface topography data;

[0048] A data processing module, connected to the three-dimensional laser scanning device, is used to process the acquired surface topography data, identify the surface undulation areas, and calculate the average height value of each area;

[0049] A laser micro-nano structure processing unit is used to perform surface control processing using preset laser parameters for the identified surface undulation areas;

[0050] The laser cutting unit is used to perform laser cutting processing on the diamond blank after surface conditioning treatment according to a predetermined cutting trajectory;

[0051] Real-time monitoring system, used to monitor the temperature and status information of the processing area in real time during laser processing;

[0052] Appearance inspection and sorting equipment is used to perform appearance inspection on processed diamond substrates and classify them according to the inspection results.

[0053] Compared with the prior art, the present invention has the following beneficial effects: during processing, the surface of the diamond blank is pre-treated and coated with a layer of optical absorption enhancement material to enhance its absorption capacity of laser energy, and then the surface of the diamond blank is continuously scanned by a three-dimensional laser scanning device to obtain accurate surface morphology data, identify the undulating area of ​​the surface, and calculate the average height value of each area as an initial reference value, and for the identified surface undulating area, a surface regulation treatment is performed by using a preset laser parameter to further optimize the absorption characteristics of the material to laser energy, and on the diamond blank that has been regulated and processed, a laser beam is used to perform cutting processing according to a predetermined cutting trajectory to form a diamond substrate; during the processing, the laser parameters are monitored and adjusted, and after the cutting is completed, the processed diamond substrate is subjected to appearance inspection, and is classified according to the inspection results to complete the processing; the method significantly improves the absorption efficiency of the material to laser by coating the optical absorption enhancement material on the surface of the diamond blank, and fully considers the microscopic undulations on the surface of the diamond blank by using three-dimensional laser scanning and surface regulation processing, improves the uniformity of laser processing, and improves the processing quality by real-time monitoring and dynamic adjustment of laser parameters. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0055] The structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification so as to facilitate understanding and reading by persons familiar with this technology. They are not used to limit the conditions under which the present invention can be implemented, and therefore have no substantive technical significance. Any structural modification, change in proportion or adjustment of size, without affecting the effects and purposes that can be achieved by the present invention, should still fall within the scope of the technical contents disclosed by the present invention.

[0056] Figure 1 This is one of the flow charts of the semiconductor laser processing method of the first embodiment;

[0057] Figure 2 The second schematic diagram is a flow chart of the semiconductor laser processing method of the first embodiment;

[0058] Figure 3 This is the third flow chart of the semiconductor laser processing method of the first embodiment. DETAILED DESCRIPTION

[0059] In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described below are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0060] In the description of the present invention, it should be understood that the terms "upper", "lower", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention. It should be noted that when a component is considered to be "connected" to another component, it may be directly connected to the other component or there may be a centrally arranged component at the same time.

[0061] The technical solution of the present invention is further described below with reference to the accompanying drawings and through specific implementation methods.

[0062] Embodiment 1:

[0063] Combination Figures 1 to 3 As shown, an embodiment of the present invention provides a semiconductor laser processing method, comprising:

[0064] Step S1, pre-treating the surface of the diamond blank, coating a layer of optical enhancement material, and continuously scanning the surface of the diamond blank using a three-dimensional laser scanning device to obtain surface morphology data;

[0065] The surface of the diamond blank is pretreated to enhance its interaction with the laser in subsequent processing. Specifically, a layer of optical enhancement material is evenly coated on the surface of the diamond blank, which can improve the diamond's absorption efficiency of laser energy and reduce reflection loss. Subsequently, the surface of the diamond blank is continuously and precisely scanned using a three-dimensional laser scanning device to obtain high-resolution surface morphology data.

[0066] Step S2, identifying the surface undulation areas according to the topography data, and calculating the average height value of each area as an initial reference value;

[0067] Based on the acquired surface morphology data, further data analysis and processing, through algorithms and data processing technology, can identify the undulating areas on the surface of the diamond blank, that is, the areas where the height deviates from the reference plane. For each identified undulating area, the average height value of all data points inside it is calculated as the initial reference value of the area. These reference values ​​accurately reflect the height characteristics of each undulating area, providing key parameters for subsequent laser control processing, ensuring the pertinence and accuracy of the processing process.

[0068] Step S3, for the surface undulation area, using preset laser parameters to perform surface regulation processing to optimize the material's absorption characteristics of laser energy;

[0069] For the identified surface undulation areas, the preset laser parameters are used for surface control processing. By precisely adjusting the laser power, wavelength, pulse width and scanning speed and other parameters, the undulation areas are processed in a directional manner to form specific micro-nano structures or textures. This control treatment is intended to optimize the absorption characteristics of the diamond blank to the laser energy in the undulation area, so that it can absorb the laser energy more effectively in the subsequent cutting process, reduce processing defects and improve processing quality.

[0070] Step S4, cutting the diamond blank after the control treatment according to a predetermined cutting trajectory using a laser beam to form a diamond substrate, monitoring the temperature and state of the processing area in real time during the process, and dynamically adjusting the laser parameters according to the monitoring results;

[0071] It should be noted that on the diamond blank that has completed the surface control treatment, the laser beam is used to perform precise cutting processing according to the predetermined cutting trajectory to form a diamond substrate. During the cutting process, the temperature and material state of the processing area are monitored in real time, and sensors and monitoring systems are used to obtain data during the processing. According to the monitoring results, the laser parameters, such as laser power, scanning speed and pulse frequency, are dynamically adjusted to adapt to the immediate response of the material, prevent overheating or stress concentration, and ensure that the cutting accuracy and surface quality are optimal.

[0072] Step S5, after the cutting is completed, the processed diamond substrate is inspected for appearance and classified according to the inspection results.

[0073] After cutting is completed, the processed diamond substrate is inspected for appearance. According to the inspection results, the diamond substrate is classified, and the products that meet the quality requirements are classified as qualified products and enter the subsequent production links. For products that do not meet the requirements, rework, downgrade or scrapping are decided according to the type of problem.

[0074] The working principle of this scheme is as follows: during processing, the surface of the diamond blank is pre-treated and coated with a layer of optical absorption enhancing material to enhance its absorption capacity of laser energy. Then, the surface of the diamond blank is continuously scanned by a three-dimensional laser scanning device to obtain accurate surface morphology data, identify the surface undulation area, and calculate the average height value of each area as the initial reference value. For the identified surface undulation area, the preset laser parameters are used to perform surface regulation and treatment to further optimize the material's absorption characteristics of laser energy. On the diamond blank that has been regulated and treated, the laser beam is used to perform cutting according to the predetermined cutting trajectory. Cutting is performed to form a diamond substrate; during the processing, laser parameters are monitored and adjusted; after cutting is completed, the processed diamond substrate is inspected for appearance, and classified according to the inspection results to complete the processing; the method significantly improves the absorption efficiency of the material to laser by coating the optical absorption enhancement material on the surface of the diamond blank, utilizes three-dimensional laser scanning and surface regulation and treatment, fully considers the microscopic fluctuations on the surface of the diamond blank, improves the uniformity of laser processing, and improves the cutting accuracy and surface quality of the processing process by real-time monitoring and dynamic adjustment of laser parameters, thereby realizing high-quality laser processing of polycrystalline diamond substrates.

[0075] In this embodiment, it is specifically explained that step S1 specifically includes:

[0076] Step S11, cleaning the surface of the diamond blank by ultrasonic cleaning with ethanol or acetone solution to remove oil, impurities and dust on the surface for 10-15 minutes;

[0077] This step cleans the surface of the diamond blank to ensure the effectiveness of the subsequent process and the stability of the material surface state. Specifically, ultrasonic cleaning is used to place the diamond blank in a cleaning tank containing ethanol or acetone solution, and the physical effect of ultrasonic vibration is used to deeply remove oil, dust and other impurities on the surface and in tiny pores. The cleaning time is set to 10 to 15 minutes to ensure the adequacy of the cleaning effect.

[0078] Step S12, placing the cleaned diamond blank in a vacuum environment and performing plasma surface activation treatment, the treatment gas is argon, the gas pressure is 10-20 Pa, and the treatment time is 5-10 minutes; to remove residual surface pollutants and improve the adhesion of the optical absorption enhancement material.

[0079] Step S13, uniformly coating a layer of optical absorption enhancement material on the surface of the activated diamond blank by physical vapor deposition; wherein the optical absorption enhancement material is a nano-scale metal oxide film with a thickness of 20-100 nanometers, and the metal oxide film is selected from one or more of zinc oxide, tin oxide or titanium oxide. Control the deposition rate and vacuum degree to ensure the quality of the film layer;

[0080] A layer of optical absorption enhancement material is evenly coated on the surface of the activated diamond blank. The nanoscale metal oxide film is deposited on the surface of the diamond blank by physical vapor deposition (PVD). The optical enhancement material selected is a nanoscale metal oxide film such as zinc oxide, tin oxide or titanium oxide, and the film thickness is controlled in the range of 20 to 100 nanometers. The uniformity and density of the film are ensured by precisely controlling the deposition parameters such as temperature, vacuum degree and deposition rate. The presence of the metal oxide film can significantly improve the absorption efficiency of the diamond blank for lasers of a specific wavelength and optimize the energy utilization of subsequent laser processing.

[0081] Step S14, drying and curing the diamond blank coated with the optical absorption enhancing material at a temperature of 150-200° C. for 30-60 minutes, so that the optical absorption enhancing material forms a stable adhesion layer on the surface of the diamond blank;

[0082] The diamond blank coated with optical enhancement material is dried and cured. The blank is placed in an oven at a temperature of 150 to 200°C for 30 to 60 minutes for heat treatment to remove residual solvent and moisture in the film, promote the densification of the film and the bonding strength with the substrate. This process allows the optical enhancement material to form a stable and firm adhesion layer on the surface of the diamond blank, ensuring that the performance of the film is stable in subsequent processing without falling off or performance degradation.

[0083] Step S15, using a three-dimensional laser scanning device to continuously scan the surface of the pre-treated diamond blank to obtain surface morphology data; the scanning speed is 100 mm / s, and a constant ambient temperature and humidity are maintained during the scanning process.

[0084] Step S16, storing and preliminarily processing the acquired topographic data, the preliminarily processing including data filtering, noise elimination and coordinate calibration.

[0085] First, the data is filtered and an appropriate algorithm is used to eliminate noise and outliers to ensure data reliability. Then, coordinate calibration is performed to unify the reference coordinate system of the data to facilitate data docking with subsequent processing equipment. The data after preliminary processing accurately reflects the three-dimensional morphology of the surface of the diamond blank, providing data support for subsequent steps such as identifying undulating areas and calculating average height values.

[0086] In this embodiment, it is specifically described that step S2 specifically includes:

[0087] Step S21, importing the acquired topographic data into a data processing module, extracting a set of three-dimensional coordinate points on the surface of the diamond blank from the topographic data, and reflecting the microscopic undulation characteristics of the surface;

[0088] In this step, the surface morphology data obtained from the three-dimensional laser scanning device is imported into the data processing module. The morphology data includes a set of three-dimensional coordinate points on the surface of the diamond blank, which reflects the microscopic undulation characteristics of the blank surface in detail.

[0089] Step S22, based on the three-dimensional coordinate point set, a least square plane fitting method is used to establish a reference reference plane on the surface of the diamond blank, which is used to measure the relative height deviation of each three-dimensional coordinate point;

[0090] Based on the extracted 3D coordinate point set, the reference plane of the diamond blank surface is established by using the least squares plane fitting method. Least squares plane fitting is a statistical method that aims to find a plane that minimizes the sum of the squares of the distances from all data points to the plane. This reference plane is used to measure the relative height deviation of each 3D coordinate point, providing a unified benchmark for convenient evaluation of surface undulation.

[0091] Step S23, calculating the height deviation of each three-dimensional coordinate point relative to the reference datum plane to obtain a surface height deviation distribution map;

[0092] In this step, the height deviation of each three-dimensional coordinate point relative to the reference plane is calculated. Specifically, by substituting the coordinates of each data point into the equation of the reference plane, the vertical distance from the point to the plane (i.e., the height deviation) is obtained. In this way, the height deviation distribution map of the entire diamond blank surface is obtained, which intuitively shows the ups and downs of each point on the surface.

[0093] Step S24, performing threshold segmentation processing on the height deviation distribution map, setting a height deviation threshold Δh, and when the absolute value of the height deviation of continuous data points in a certain area is greater than Δh, marking the corresponding area as a surface undulation area.

[0094] Perform threshold segmentation on the height deviation distribution map and set a height deviation threshold Δh. When the absolute value of the height deviation of consecutive data points in a certain area is greater than Δh, the corresponding area is marked as a surface undulation area. The setting of this threshold Δh can be adjusted according to the processing accuracy requirements. Through threshold segmentation, the areas that need to be focused on can be effectively screened out to improve the pertinence of subsequent processing.

[0095] Step S25, using a clustering algorithm to segment the marked surface undulation area, and classifying adjacent height deviation data points that meet the conditions into the same type of undulation area;

[0096] Clustering algorithms are used to further segment the marked surface undulation areas. Data points that are spatially adjacent and have height deviations that meet the conditions are classified as the same type of undulation area through clustering algorithms (such as density clustering, K-means clustering, etc.). In this way, complex surface undulation areas can be effectively divided into several independent areas, and the scope of each area can be clearly defined.

[0097] Step S26, for each identified surface undulation area, calculate the average height deviation value of all data points therein, specifically, average the height deviation values ​​of all data points in the corresponding surface undulation area relative to the reference datum plane to obtain its average height value as the initial reference value.

[0098] For each identified surface undulation area, the average height deviation value of all data points within it is calculated. The specific method is to accumulate the height deviation values ​​of all data points in the undulation area relative to the reference datum plane and take the average to obtain the average height value of the area as the initial reference value.

[0099] In this embodiment, it is specifically described that step S2 specifically includes:

[0100] Step S31, according to the average height value of each surface undulation area, a corresponding surface control scheme is formulated, and corresponding control targets are set for areas with different height deviations to optimize the absorption characteristics of the diamond blank to the laser energy.

[0101] Step S32, setting preset laser parameters for each surface relief area, the laser parameters including laser wavelength, laser power, pulse width and repetition frequency, specifically:

[0102] The laser wavelength is selected as 355 nanometer ultraviolet laser;

[0103] The laser power was set to 0.5-5 watts, adjusted according to the height deviation of the surface relief area;

[0104] The pulse width is set to 10-50 nanoseconds, and short pulses are used to reduce the heat-affected zone;

[0105] The repetition frequency is set to 10-100 kHz to ensure processing efficiency.

[0106] Step S33, using the set laser parameters and laser micro-nano structure processing technology, each surface undulation area is subjected to surface control treatment, and the laser beam is controlled to scan the surface undulation area according to a predetermined scanning path to form a periodic micro-nano structure on the surface of the diamond blank; for example, a groove, columnar or hole structure; wherein the size and shape of the micro-nano structure are designed according to the required absorption characteristics, and the typical size is 0.1-10 microns; the uniformity and consistency of the micro-nano structure are ensured by adjusting the laser focus position and the scanning strategy.

[0107] After the surface treatment is completed, the surface of the diamond blank is tested for its light absorption performance. A UV-visible spectrophotometer is used to measure the surface absorption rate at the processing laser wavelength. If the absorption rate reaches the preset standard (for example, an increase of more than 20%), the surface treatment is qualified.

[0108] In this embodiment, it is specifically described that step S4 specifically includes:

[0109] Step S41, according to the design requirements and size specifications of the diamond blank, a cutting trajectory is formulated, and the formulated cutting trajectory is imported into the numerical control module of the laser processing system; the cutting trajectory is designed by computer-aided design software (CAD) to generate a coordinate numerical model to accurately describe the shape and size of the diamond substrate;

[0110] The designed cutting trajectory is imported into the CNC control module of the laser processing system to ensure the accuracy and executability of the cutting path, and the path data is simulated to verify its rationality.

[0111] Step S42, setting parameters for the laser cutting equipment, wherein the laser of the laser cutting equipment is an ultrafast pulse laser;

[0112] The laser parameters specifically include: the laser wavelength is selected as 1064 nanometers or 532 nanometers to match the absorption characteristics of diamond materials; the laser power is set to 10-100 watts, which can be adjusted according to material thickness and cutting speed; the pulse width is set to 10 picoseconds to 10 nanoseconds, and ultra-short pulses are used to reduce the heat-affected zone; the repetition frequency is set to 50 kHz to 500 kHz to ensure processing efficiency.

[0113] Step S43, fix the diamond blank after the adjustment process on the workbench by vacuum adsorption or mechanical clamping, and ensure the stability and positioning accuracy of the diamond blank during the processing.

[0114] Step S44, using a high-precision laser alignment system, align the focus of the laser beam with the cutting starting point on the diamond blank, make the laser beam path consistent with the predetermined cutting trajectory, start the laser cutting program, and control the laser beam to cut the diamond blank according to the predetermined cutting trajectory.

[0115] Step S45, during the cutting process, an infrared thermometer is used or the temperature of the processing point is measured to monitor the temperature information of the processing area in real time, and an online machine vision system is used to detect the cutting groove width, surface quality and slag discharge of the cutting groove to monitor the status information of the processing area in real time.

[0116] Step S46, dynamically adjusting the laser parameters according to the real-time monitored temperature information and state information, and continuously adjusting the laser parameters until the cutting process is completed to form a diamond substrate that meets the design requirements.

[0117] The dynamic adjustment process of laser parameters specifically includes:

[0118] When the temperature exceeds the preset safety threshold, the laser power is automatically reduced or the scanning speed is increased to prevent overheating and damage to the material;

[0119] If a deviation in the cutting groove width or a decrease in surface quality is detected, adjust the pulse width or repetition frequency to optimize the energy distribution;

[0120] According to the slag discharge situation, adjust the flow and pressure of the auxiliary gas (such as nitrogen or argon) to improve the slag removal efficiency.

[0121] Embodiment 2:

[0122] The present invention further provides a semiconductor laser processing device for implementing the semiconductor laser processing method of the first embodiment, the laser processing device comprising:

[0123] The surface pretreatment module comprises a cleaning component, an activation component and a coating unit, and is used for pretreating the surface of the diamond blank and coating a layer of optical enhancement material.

[0124] The three-dimensional laser scanning equipment is used to continuously scan the surface of the diamond blank and obtain the surface morphology data.

[0125] The data processing module is connected to the three-dimensional laser scanning device and is used to process the acquired surface topography data, identify the surface undulation areas, and calculate the average height value of each area.

[0126] The laser micro-nano structure processing unit is used to perform surface control processing using preset laser parameters on the identified surface undulation areas.

[0127] The laser cutting unit is used to perform laser cutting processing on the diamond blank after surface adjustment treatment according to a predetermined cutting trajectory.

[0128] The real-time monitoring system is used to monitor the temperature and status information of the processing area in real time during the laser processing.

[0129] Appearance inspection and sorting equipment is used to perform appearance inspection on processed diamond substrates and classify them according to the inspection results.

[0130] As described above, the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features thereof may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A semiconductor laser processing method, characterized in that: include: Step S1, pre-treating the surface of the diamond blank, coating a layer of optical enhancement material, and continuously scanning the surface of the diamond blank using a three-dimensional laser scanning device to obtain surface morphology data; Step S2, identifying the surface undulation areas according to the topography data, and calculating the average height value of each area as an initial reference value; Step S3, for the surface undulation area, using preset laser parameters to perform surface regulation processing to optimize the material's absorption characteristics of laser energy; Step S4, cutting the diamond blank after the control treatment according to a predetermined cutting trajectory using a laser beam to form a diamond substrate, monitoring the temperature and state of the processing area in real time during the process, and dynamically adjusting the laser parameters according to the monitoring results; Step S5, after the cutting is completed, the processed diamond substrate is subjected to appearance inspection and classified according to the inspection results; Wherein, the step S1 specifically includes: Step S11, cleaning the surface of the diamond blank by ultrasonic cleaning with ethanol or acetone solution to remove oil, impurities and dust on the surface for 10-15 minutes; Step S12, placing the cleaned diamond blank in a vacuum environment and performing plasma surface activation treatment, the treatment gas is argon, the gas pressure is 10-20 Pa, and the treatment time is 5-10 minutes; Step S13, uniformly coating a layer of optical absorption enhancing material on the surface of the activated diamond blank by physical vapor deposition; wherein the optical absorption enhancing material is a nano-scale metal oxide film with a thickness of 20-100 nanometers, and the metal oxide film is selected from one or more of zinc oxide, tin oxide or titanium oxide; Step S14, drying and curing the diamond blank coated with the optical absorption enhancing material at a temperature of 150-200° C. for 30-60 minutes, so that the optical absorption enhancing material forms a stable adhesion layer on the surface of the diamond blank; Step S15, continuously scanning the surface of the pre-treated diamond blank using a three-dimensional laser scanning device to obtain surface morphology data; Step S16, storing and preliminarily processing the acquired topographic data, wherein the preliminarily processing includes data filtering, noise elimination and coordinate calibration; The step S3 specifically includes: Step S31, formulating a corresponding surface control scheme according to the average height value of each surface undulation area, setting corresponding control targets for areas with different height deviations, so as to optimize the absorption characteristics of the diamond blank to the laser energy; Step S32, setting preset laser parameters for each surface undulation region, wherein the laser parameters include laser wavelength, laser power, pulse width and repetition frequency, specifically: The laser wavelength is selected as 355 nanometer ultraviolet laser; The laser power was set to 0.5-5 watts, adjusted according to the height deviation of the surface relief area; The pulse width was set to 10-50 nanoseconds; The repetition rate was set to 10-100 kHz; Step S33, using the set laser parameters and laser micro-nano structure processing technology, each surface undulation area is subjected to surface control processing, and the laser beam is controlled to scan the surface undulation area according to a predetermined scanning path to form a periodic micro-nano structure on the surface of the diamond blank.

2. The semiconductor laser processing method according to claim 1, characterized in that: The step S2 specifically includes: Step S21, importing the acquired topographic data into a data processing module, extracting a set of three-dimensional coordinate points on the surface of the diamond blank from the topographic data, reflecting the microscopic undulation characteristics of the surface; Step S22, based on the three-dimensional coordinate point set, a least squares plane fitting method is used to establish a reference reference plane on the surface of the diamond blank, which is used to measure the relative height deviation of each three-dimensional coordinate point; Step S23, calculating the height deviation of each three-dimensional coordinate point relative to the reference datum plane to obtain a surface height deviation distribution map; Step S24, performing threshold segmentation processing on the height deviation distribution map, setting a height deviation threshold Δh, and when the absolute value of the height deviation of continuous data points in a certain area is greater than Δh, marking the corresponding area as a surface undulation area.

3. The semiconductor laser processing method according to claim 2, characterized in that: After step S23, the following steps are also included: Step S25, using a clustering algorithm to segment the marked surface undulation area, and classifying adjacent height deviation data points that meet the conditions into the same type of undulation area; Step S26, for each identified surface undulation area, calculate the average height deviation value of all data points therein, specifically, average the height deviation values ​​of all data points in the corresponding surface undulation area relative to the reference datum plane to obtain its average height value as the initial reference value.

4. The semiconductor laser processing method according to claim 1, characterized in that: The step S4 specifically includes: Step S41, formulating a cutting trajectory according to the design requirements and size specifications of the diamond blank, and importing the formulated cutting trajectory into a numerical control module of a laser processing system; Step S42, setting parameters for the laser cutting equipment, wherein the laser of the laser cutting equipment is an ultrafast pulse laser; Step S43, fixing the diamond blank after the adjustment process on a workbench by vacuum adsorption or mechanical clamping; Step S44, using a high-precision laser alignment system, align the focus of the laser beam with the cutting starting point on the diamond blank, make the laser beam path consistent with the predetermined cutting trajectory, start the laser cutting program, and control the laser beam to cut the diamond blank according to the predetermined cutting trajectory.

5. The semiconductor laser processing method according to claim 4, characterized in that: After step S44, the following steps are also included: Step S45, during the cutting process, an infrared thermometer is used or the temperature of the processing point is measured to monitor the temperature information of the processing area in real time, and an online machine vision system is used to detect the cutting groove width, surface quality and slag discharge of the cutting groove to monitor the status information of the processing area in real time; Step S46, dynamically adjusting the laser parameters according to the real-time monitored temperature information and state information, and continuously adjusting the laser parameters until the cutting process is completed to form a diamond substrate that meets the design requirements.

6. A semiconductor laser processing device, characterized in that: For implementing the semiconductor laser processing method according to any one of claims 1 to 5, the laser processing device comprises: A surface pretreatment module, including a cleaning component, an activation component and a coating unit, is used to pretreat the surface of the diamond blank and coat a layer of optical enhancement material; 3D laser scanning equipment, used to continuously scan the surface of diamond blanks and obtain surface topography data; A data processing module, connected to the three-dimensional laser scanning device, is used to process the acquired surface topography data, identify the surface undulation areas, and calculate the average height value of each area; A laser micro-nano structure processing unit is used to perform surface control processing using preset laser parameters for the identified surface undulation areas; The laser cutting unit is used to perform laser cutting processing on the diamond blank after surface conditioning treatment according to a predetermined cutting trajectory; Real-time monitoring system, used to monitor the temperature and status information of the processing area in real time during laser processing; Appearance inspection and sorting equipment is used to perform appearance inspection on processed diamond substrates and classify them according to the inspection results.

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