Substrate processing apparatus

Abstract

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of sensing inclination or bias of a tray supporting a substrate when a processing process such as a drying process is performed on the substrate using a supercritical fluid. The substrate processing apparatus includes: a chamber providing a processing space in which a processing process is performed on a substrate coated with an organic solvent using a fluid in a supercritical state; a tray that supports the substrate and is provided so as to be able to be carried into and taken out of the chamber through the opening of the chamber; and a sensing sensor for sensing the inclination or bias of the tray, the sensing sensor is provided with a first sensing sensor for sensing the inclination of the tray with a first axis parallel to the horizontal plane as a reference. And at least one of a second sensing sensor for sensing the inclination of the tray with a second axis parallel to the horizontal plane as a reference and a third sensing sensor for sensing the movement of the tray in the direction of the first axis.

Description

Technical Field

[0001] The present invention relates to a substrate processing device, and more particularly to a substrate processing device capable of sensing the tilt or bias of a tray supporting a substrate when a processing process such as a drying process is performed on the substrate using a supercritical fluid. Background Art

[0002] Generally, when a large-scale / high-density semiconductor device such as LSI (Large scale integration) is manufactured on the surface of a semiconductor wafer, it is necessary to form an extremely fine pattern on the wafer surface.

[0003] Such a microscopic pattern can be formed by subjecting a wafer coated with a resist to various processes of exposure, development, and cleaning, patterning the resist, and then etching the wafer to transfer the resist pattern to the wafer.

[0004] After such etching, the wafer is cleaned to remove dust or natural oxide film on the surface of the wafer. The cleaning process is performed by immersing the wafer with a pattern formed on the surface in a treatment liquid such as a chemical solution or a rinse liquid, or by supplying the treatment liquid to the surface of the wafer.

[0005] However, as semiconductor devices are increasingly integrated, pattern collapse occurs when a processing liquid is dried after a cleaning process, in which a pattern on a resist or wafer surface collapses.

[0006] Such pattern collapse corresponds to Fig. 9 As shown in the figure, when the cleaning process is completed and the organic solvent 10 remaining on the surface of the substrate S is dried, if the processing liquid on the left and right of the patterns 11, 12, 13 is unevenly dried, the capillary force that stretches the patterns 11, 12, 13 to the left and right will be unbalanced, causing the patterns 11, 12, 13 to collapse in the direction where more processing liquid remains.

[0007] exist Fig. 9 In the case of , the drying of the processing liquid in the left and right outer regions where no pattern is formed on the substrate S is completed, and the organic solvent 10 remains in the gaps between the patterns 11, 12, and 13. As a result, the patterns 11 and 13 on the left and right sides collapse inward due to the capillary force received from the organic solvent 10 remaining between the patterns 11, 12, and 13.

[0008] The capillary force causing the aforementioned pattern collapse is due to the surface tension of the processing liquid acting in the liquid / gas interface disposed between the atmospheric atmosphere surrounding the substrate S after the cleaning process and the processing liquid remaining between the patterns.

[0009] Therefore, a treatment method for drying a treatment liquid using a fluid in a supercritical state (hereinafter referred to as a "supercritical fluid") that does not form an interface with a gas or a liquid has recently attracted attention.

[0010] exist Fig.10 In the state diagram of pressure and temperature, in the drying method of the prior art using only temperature regulation, the gas-liquid equilibrium line must be passed as shown by the dotted line, and therefore, capillary force is generated at the gas-liquid interface at this time.

[0011] In contrast, when drying is performed in a supercritical state by adjusting the temperature and pressure of the fluid, the substrate can be dried essentially without capillary force without passing through the gas-liquid equilibrium line.

[0012] Reference Fig.10 In observing the drying using supercritical fluid, if the pressure of the liquid is raised from A to B, and then the temperature is raised from B to C, it will not pass through the gas-liquid equilibrium line and will be converted to the supercritical state C. In addition, at the end of the drying process, the pressure of the supercritical fluid is reduced and it will not pass through the gas-liquid equilibrium line and will be converted to gas D.

[0013] On the other hand, in the case of a conventional apparatus for performing a treatment process such as a drying process on a substrate using a supercritical fluid as described above, a tray on which the substrate is placed is provided, and the tray is moved to the inside of a chamber and the process is performed. In this case, when the tray is aligned and arranged at a predetermined position in the center of the chamber in the vertical and horizontal directions, the process for the substrate can be performed more efficiently. However, due to various reasons, the tray may not be aligned with the predetermined position.

[0014] For example, one end of the tray is fixed to a cover that seals the opening of the chamber, and the other end of the tray corresponds to a free end that is not fixed. Therefore, as the process proceeds, the other end of the tray that is not fixed may sag due to its own weight and tilt. In addition, when the tray is moved into the chamber, it may be moved in with a bias to one side on the horizontal plane.

[0015] In this way, if the distance between the tray and the bottom surface, ceiling and inner wall of the chamber is not kept constant but changes, the tray will deviate from the specified position and the organic solvent 10 on the substrate S cannot properly protect the pattern on the substrate S, which may cause damage to the pattern.

[0016] In addition, the flow of the fluid supplied to the inside of the chamber is uneven, so that the flow energy of the fluid cannot be uniformly transmitted toward the substrate S. In this case, the flow energy of the fluid cannot be transmitted to the upper surface of the substrate S, and thus the organic solvent 10 such as IPA (Isopropyl alcohol) existing between the patterns 12 of the substrate S may not be properly replaced. Summary of the invention

[0017] In order to solve the above-mentioned problems, an object of the present invention is to provide a substrate processing apparatus capable of aligning a tray on which a substrate is placed at a predetermined position in a chamber of the substrate processing apparatus.

[0018] Furthermore, an object of the present invention is to provide a substrate processing apparatus capable of sensing a tilt or a deviation of a tray on which a substrate is placed.

[0019] The object of the present invention as described above is achieved by a substrate processing device, which is characterized in that it comprises: a chamber, which provides a processing space for performing a processing process on a substrate coated with an organic solvent using a fluid in a supercritical state; a tray, which supports the substrate and is configured to be able to be moved into the interior of the chamber and taken out of the exterior of the chamber through an opening of the chamber; and a sensing sensor, which senses the tilting or deflection of the tray, the sensing sensor comprising at least one of a first sensing sensor for sensing the tilt of the tray based on a first axis (X-axis) parallel to a horizontal plane, a second sensing sensor for sensing the tilt of the tray based on a second axis (Y-axis) parallel to the horizontal plane, and a third sensing sensor for sensing the movement of the tray in the direction of the first axis (X-axis).

[0020] Here, the first sensing sensor may include: a 1-1 sensing sensor for sensing a distance to a lower surface of the tray; and a 1-2 sensing sensor for sensing a distance to a lower surface outside the chamber.

[0021] Alternatively, the first distance between the lower surface of the tray and the base of the processing space may be calculated using the following [Formula 1]:

[0022] [Formula 1]

[0023] First distance = fourth distance – (fifth distance + sixth distance)

[0024] The fourth distance is the distance from the lower surface of the tray measured by the 1-1 sensing sensor, the fifth distance is the distance from the lower surface of the outside of the chamber measured by the 1-2 sensing sensor, and the sixth distance is the thickness of the base of the chamber.

[0025] The substrate processing apparatus further includes a control unit configured to compare the calculated first distance with a predetermined critical range to determine whether the tray is tilted based on the first axis (X axis).

[0026] Furthermore, the substrate processing device may further include a control unit, and during the movement of the pallet, a fourth distance from the lower surface of the pallet is measured by the 1-1 sensing sensor, and the control unit compares the fourth distance measured by the 1-1 sensing sensor with a predetermined reference value to determine the degree of sagging of the pallet.

[0027] On the other hand, the 1-1 sensing sensor may continuously or repeatedly measure the fourth distance to the lower surface of the tray at predetermined time intervals during the process of the tray moving toward the chamber or separating from the chamber and moving.

[0028] Furthermore, the second sensing sensor may include: a 2-1 sensing sensor that senses a distance to one end of the tray; and a 2-2 sensing sensor that senses a distance to the other end of the tray.

[0029] In this case, one end portion and the other end portion of the tray may be ends spaced apart from each other along the first axis (X axis).

[0030] In addition, the substrate processing apparatus may further include a control unit, which compares the seventh distance measured by the 2-1 sensing sensor and the eighth distance measured by the 2-2 sensing sensor to determine whether the tray is tilted based on the second axis (Y axis).

[0031] On the other hand, the third sensing sensor may include: a 3-1 sensing sensor that senses a distance to one side surface of the tray; and a 3-2 sensing sensor that senses a distance to one side surface outside the chamber.

[0032] In addition, the third distance between the side surface of the tray and the inner wall of the processing space may be calculated using the following [Formula 2]:

[0033] [Formula 2]

[0034] The third distance = the ninth distance – (the tenth distance + the eleventh distance)

[0035] The ninth distance is the distance from one side of the tray measured by the 3-1 sensing sensor, the tenth distance is the distance from one side of the outside of the chamber measured by the 3-2 sensing sensor, and the eleventh distance is the thickness of the side wall of the chamber.

[0036] The substrate processing apparatus further includes a control unit configured to compare the calculated third distance with a predetermined critical range to determine whether the tray is biased based on the first axis (X axis).

[0037] According to the present invention having the above structure, it is possible to easily determine whether the tray supporting the substrate is aligned with the specified position in the chamber. In addition, by detecting the tilt or deviation of the tray and replacing the tray, the substrate processing process can be performed more smoothly.

[0038] Furthermore, according to the present invention, when assembling a substrate processing device, a predetermined reference value is referred to, so that the device can be set and assembled regardless of the assembly / processing error of the device and the skill of the assembler. In addition, process problems such as deformation and assembly disassembly that may occur due to the weight, pressure, temperature, etc. of the substrate processing device can be cut off in advance. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 is a block diagram showing the structure of a substrate processing apparatus using a supercritical fluid according to the present invention,

[0040] Figure 2 is a side sectional view showing the structure of the chamber,

[0041] Figure 3 is a side view showing when the tray is tilted with the first axis (X axis) parallel to the horizontal plane as a reference,

[0042] Figure 4 is a front view showing a state where the tray is tilted with respect to a second axis (Y axis) parallel to the horizontal plane,

[0043] Figure 5 is a front view showing a state in which the tray is tilted to one side along a first axis (X axis) parallel to a horizontal plane inside the chamber,

[0044] Figure 6 is a side view of a chamber having a first sensing sensor for sensing the tilt of a tray with respect to a first axis parallel to a horizontal plane,

[0045] Figure 7 is a front view of a tray unit having a second sensing sensor for sensing the tilt of the tray based on a second axis parallel to the horizontal plane,

[0046] Figure 8 is a front view of a tray unit and a chamber having a third sensing sensor for sensing movement of the tray in a first axial direction parallel to a horizontal plane,

[0047] Fig. 9 is a diagram schematically showing a state in which a pattern collapses when a pattern on a substrate is dried according to the prior art.

[0048] Fig.10 This is a state diagram showing changes in pressure and temperature of a fluid in a process using a supercritical fluid.

[0049] (Explanation of Reference Numerals)

[0050] S: Substrate

[0051] 100: Fluid storage unit

[0052] 200: Pressure regulation unit

[0053] 300: Temperature control unit

[0054] 400: Chamber

[0055] 412: Processing Space

[0056] 450: Pallet unit

[0057] 452: Cover

[0058] 456: Pallet

[0059] 458: Sealing parts

[0060] 600: Fluid Supply Department

[0061] 510: First sensing sensor

[0062] 520: Third sensing sensor

[0063] 610: Second sensing sensor

[0064] 1000: Substrate processing equipment DETAILED DESCRIPTION

[0065] Hereinafter, the structure of a substrate processing apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

[0066] Figure 1 1 is a block diagram showing the structure of a substrate processing apparatus 1000 using a supercritical fluid according to the present invention. Figure 2 is a side cross-sectional view showing the structure of the chamber 400 .

[0067] The substrate processing device 1000 according to the present invention uses a fluid in a supercritical state to perform a processing process for a substrate S. Here, if the fluid in a supercritical state refers to a state in which a substance reaches a critical state, that is, a state exceeding a critical temperature and a critical pressure, it corresponds to a fluid having a formed phase. Such a fluid in a supercritical state has a molecular density close to that of a liquid and a viscosity close to that of a gas. Therefore, the diffusion force, penetration force, and solubility of the fluid in a supercritical state are very excellent and are conducive to chemical reactions, and there is almost no surface tension and no surface tension is applied to the fine structure. Therefore, in the drying process of semiconductor elements, not only is the drying efficiency excellent, but the pattern collapse phenomenon can also be avoided and it can be used very usefully.

[0068] In the present invention, carbon dioxide (CO 2 ) is used as a supercritical fluid. Carbon dioxide has a relatively low critical temperature of approximately 31.1°C and a relatively low critical pressure of 7.38 MPa, so it is easy to manufacture into a supercritical state, its state can be easily controlled by adjusting the temperature and pressure, and it is inexpensive.

[0069] In addition, carbon dioxide is non-toxic, harmless to the human body, and has non-flammable and inactive properties. Furthermore, the diffusion coefficient of carbon dioxide in a supercritical state is about 10 to 100 times higher than that of water or other organic solvents, so the permeability is very excellent, so that the organic solvent can be replaced quickly and there is almost no surface tension, which is beneficial for the use of drying process. In addition, the carbon dioxide used in the drying process can be converted into a gas state and the organic solvent can be separated for reuse, so the burden on environmental pollution is also small.

[0070] Reference Figure 1 as well as Figure 2 The substrate processing device 1000 may include: a chamber 400, which provides a processing space 412 for performing a processing process on a substrate S coated with a processing liquid or an organic solvent 10 (hereinafter referred to as "organic solvent") using a supercritical fluid; and a fluid supply part 600, which supplies fluid to the inside of the chamber 400.

[0071] The fluid supply part 600 may adjust at least one of the temperature and the pressure of the fluid to supply the fluid to the chamber 400 .

[0072] For example, the fluid supply unit 600 may include: a fluid storage unit 100 storing the fluid; and a main supply line 120 connecting the fluid storage unit 100 and the chamber 400 .

[0073] In this case, the pressure regulating unit 200 and the temperature regulating unit 300 may be arranged along the main supply line 120. The order of the pressure regulating unit 200 and the temperature regulating unit 300 in the main supply line 120 is shown as an example, and of course, the temperature regulating unit 300 may be arranged first in the main supply line 120 and the pressure regulating unit 200 may be arranged at the rear end.

[0074] At this time, the pressure regulating unit 200 may be composed of, for example, a pressure pump, and the temperature regulating unit 300 may be composed of a heater or a heat exchanger for heating the fluid.

[0075] Furthermore, the main supply line 120 may further include a sensing unit (not shown) for sensing at least one of the pressure and the temperature of the fluid. The pressure and the temperature of the fluid flowing in the main supply line 120 may be adjusted according to the pressure and the temperature sensed in the sensing unit. To this end, the substrate processing apparatus 1000 according to an embodiment of the present invention may include a control unit (not shown) for controlling the pressure regulating unit 200 and the temperature regulating unit 300. The control unit may control the pressure regulating unit 200 and the temperature regulating unit 300 based on the pressure and the temperature sensed in the sensing unit.

[0076] On the other hand, when performing a processing process on the substrate S, the temperature and pressure of the processing space 412 of the chamber 400 must be maintained above the critical temperature and the critical pressure so that the fluid supplied to the inside of the chamber 400 can be converted into a supercritical state.

[0077] To this end, when the fluid moves along the main supply line 120, the fluid can be pressurized to a critical pressure or a pressure above it by the pressure regulating unit 200, and the fluid can be heated to a critical temperature or a temperature above it by the temperature regulating unit 300.

[0078] On the other hand, the main supply line 120 may be branched to form a first supply line 142 connected to the upper portion of the chamber 400 and a second supply line 144 connected to the lower portion of the chamber 400. In this case, although not shown, valves may be provided on the first supply line 142 and the second supply line 144 to adjust the supply of the fluid.

[0079] If the fluid is supplied through the upper part of the chamber 400 from the beginning of the process, the high-pressure fluid can be supplied from the upper part of the chamber 400 toward the substrate S. In this case, the pattern (not shown) formed on the upper part of the substrate S may be damaged by the high-pressure fluid. Therefore, the fluid is supplied from the lower part of the chamber 400 through the second supply line 144 at the beginning of the process to prevent the pattern on the substrate S from being damaged. After the inner pressure of the chamber 400 reaches the process pressure, the fluid can be supplied from the upper part of the chamber 400 through the first supply line 142.

[0080] In addition, a discharge line 146 capable of discharging the fluid in the processing space 412 to the outside may be further provided in the chamber 400. The fluid may be discharged from the inside of the chamber 400 to the outside through the discharge line 146 during or after the processing of the substrate S.

[0081] On the other hand, the chamber 400 may provide a processing space 412 for performing a processing process such as a drying process on the substrate S using a fluid in a supercritical state.

[0082] The chamber 400 may have an opening 414 formed at one side, and the inner side may be made into a material suitable for processing a high pressure process for the substrate S.

[0083] The processing space 412 of the chamber 400 may be kept in a sealed state, and the pressure of the fluid supplied to the processing space 412 may be kept above a critical pressure.

[0084] In addition, the chamber 400 may further include a heating unit (not shown) to maintain the temperature of the processing space 412 at a predetermined temperature or higher. The heating unit may maintain the temperature of the processing space 412 or the temperature of the fluid contained in the processing space 412 at a critical temperature or higher during the process of the substrate S.

[0085] On the other hand, the chamber 400 may include a substrate supporting unit for supporting the substrate S. In this embodiment, the substrate supporting unit may be composed of a tray unit 450 .

[0086] The tray unit 450 may be carried into the processing space 412 of the chamber 400 through the opening 414 or may be taken out of the processing space 412 to the outside of the chamber 400 through the opening 414 .

[0087] For example, the tray unit 450 may include a support portion 460 that protrudes to support the substrate S, and a tray 456 that is configured to be able to be moved into the interior of the chamber 400 and taken out of the exterior of the chamber 400 through the opening portion 414 of the chamber 400, and a cover body 452 that is arranged at one end of the tray 456 to seal the opening portion 414.

[0088] The tray 456 may be placed on and support the substrate S. A plurality of support portions 460 for supporting the substrate S may be formed on the tray 456. The substrate S may be placed on the upper end of the support portion 460 to be supported.

[0089] On the other hand, the cover 452 may be connected to one end of the tray 456 .

[0090] When the tray 456 is inserted into the processing space 412 through the opening 414, the cover 452 seals the opening 414. In this case, a sealing member 458 may be provided to seal between the cover 452 and the chamber 400.

[0091] On the other hand, when the opening 414 is sealed by the cover 452 , a high-pressure process is performed inside the chamber 400 using a supercritical fluid, and thus a structure is required to prevent the cover 452 from being moved by the pressure inside the chamber 400 .

[0092] For example, a rolling curtain 459 may be provided to apply pressure so that the cover 452 is not pushed by the pressure inside the chamber 400. When the tray 456 is inserted into the inner side of the processing space 412 and the opening 414 is blocked by the cover 452, the rolling curtain 459 applies pressure to the cover 452 so that the cover 452 is not pushed during the process. The rolling curtain 459 may move in a vertical direction from above or below and apply pressure to the cover 452 toward the chamber 400 from the outer side of the cover 452. In this way, the structure for applying pressure to the cover 452 is described as an example, and various modifications may be made to apply.

[0093] In the aforementioned structure, it is important that the tray 456 is aligned with a predetermined position of the center portion in the chamber 400 in the vertical and horizontal directions when the tray 456 is coupled to the chamber 400 .

[0094] For example, as shown in the figure, it is important to constantly maintain a first distance A between the lower surface of the tray 456 and the base of the processing space 412 and a second distance B between the upper surface of the tray 456 and the ceiling of the processing space 412. If the first distance A and the second distance B mentioned above change, the organic solvent 10 on the upper surface of the substrate S may not be able to protect the pattern due to the bias to one side. Hereinafter, the tilt and bias of the tray 456 will be specifically examined with reference to the drawings.

[0095] Figures 3 to 5 4 is a diagram showing a case where the tray 456 is tilted in the chamber 400 or is biased to one side in the chamber 400 .

[0096] first, Figure 3 4 is a side view showing a state where the tray 456 is tilted with respect to a first axis (X axis) parallel to a horizontal plane.

[0097] Reference Figure 3 One end of the tray 456 corresponds to the fixed end connected and fixed to the cover 452 as described above, and the other end of the tray 456 corresponds to the free end that is not fixed. Therefore, as the process of the substrate S is repeated, the other end of the tray 456 corresponding to the free end may sag and tilt due to its own weight. In addition, the tray 456 may also tilt due to the high-pressure fluid supplied to the inside of the chamber 400.

[0098] Thus, when the tray 456 is tilted, the first distance A′ and the second distance B′ cannot be kept constant, but change due to the tilt of the tray 456 .

[0099] As a result, the tilt of the tray 456 may cause the organic solvent 10 on the upper part of the substrate S to flow out, thereby failing to properly protect the pattern on the substrate S and causing damage to the pattern. In addition, the flow of the fluid supplied to the interior of the chamber 400 is uneven, so that the flow energy of the fluid cannot be uniformly transmitted toward the substrate S. In this case, if the flow energy of the fluid is not transmitted or cannot be uniformly transmitted to the upper part of the substrate S, the organic solvent 10 such as IPA (Isopropyl alcohol) existing between the patterns (not shown) on the substrate S may not be properly replaced.

[0100] on the other hand, Figure 4 4 is a front view showing the tray 456 tilted with respect to a second axis (Y axis) parallel to the horizontal plane. Here, the second axis (Y axis) may correspond to a direction orthogonal to the first axis (X axis) on the plane.

[0101] Reference Figure 4 When the tray 456 is moved into the chamber 400 , the tray 456 may be coupled with the chamber 400 at an angle with respect to the second axis.

[0102] In this case, if Figure 4 As shown, the tray 456 is tilted with respect to the second axis (Y axis) so that the first distances A” and A”′ may be different on the left and right sides of the tray 456. In addition, although not shown in the figure, the second distance is of course different on the right and left sides of the tray 456.

[0103] As a result, in this case it is also possible as in Figure 3 As shown in FIG. 1 , the pattern of the substrate S may be damaged due to the loss of the organic solvent 10 or the organic solvent 10 may not be properly replaced.

[0104] on the other hand, Figure 5 It is a front view showing a state in which the tray 456 moves along the first axis (X axis) direction and is biased to one side in the processing space 412 .

[0105] Reference Figure 5 When the tray 456 is coupled to the chamber 400, it may be coupled to one side biased due to various factors. Figure 5 4 shows a case where the tray 456 moves parallel to the first axis (X axis) and is biasedly coupled.

[0106] Therefore, if the third distance between the tray 456 and the inner wall of the processing space 412 is checked, it can be seen that the third distance C1 between the tray 456 and one inner wall is relatively larger than the third distance C2 between the tray 456 and the other inner wall.

[0107] In this case, as shown in the figure, the flow of the fluid supplied to the inside of the chamber 400 is uneven, and the flow energy of the fluid may not be uniformly transferred toward the substrate S. Therefore, the flow energy of the fluid may not be transferred to the upper surface of the substrate S, or the organic solvent 10 such as IPA (Isopropylalcohol) existing between the patterns (not shown) on the substrate S may not be properly replaced.

[0108] Next, the substrate processing apparatus 1000 including the sensing sensors 510 , 520 , and 610 capable of sensing the tilt or deviation of the tray 456 described above will be examined.

[0109] Figure 6It is a side view of the chamber 400 including the first sensing sensor 510 for sensing the tilt of the tray 456 with reference to a first axis (X axis) parallel to a horizontal plane.

[0110] Reference Figure 6 The first sensing sensor 510 may be composed of a 1-1 sensing sensor 512 for sensing the distance (or height) from the lower surface of the tray 456 when the tray 456 is separated from the chamber 400, and a 1-2 sensing sensor 514 for sensing the distance (or height) from the lower surface of the outside of the chamber 400.

[0111] In this case, the 1-1st sensing sensor 512 and the 1-2nd sensing sensor 514 may be disposed on the same horizontal plane, or may be disposed to have the same height.

[0112] Therefore, when the tray 456 is placed in a state of being separated from the chamber 400, the fourth distance D from the lower surface of the tray 456 can be measured by the 1-1 sensing sensor 512. In addition, the fifth distance E from the lower surface of the outside of the chamber 400 can be measured by the 1-2 sensing sensor 514. Here, the first distance A between the lower surface of the tray 456 and the base of the processing space 412 can be defined by the following [Formula 1].

[0113] [Formula 1]

[0114] First distance A = fourth distance D – (fifth distance E + sixth distance F)

[0115] Here, the sixth distance F corresponds to the thickness of the base of the chamber 400 , which may be predetermined when the chamber 400 is manufactured and stored in the aforementioned control unit.

[0116] Therefore, when the tray 456 is separated from the chamber 400 , the control unit may measure the fourth distance D and the fifth distance E through the 1-1 sensing sensor 512 and the 1-2 sensing sensor 514 and calculate the first distance A through the [Formula 1].

[0117] The control unit compares the calculated first distance A with a predetermined critical range and determines whether the tray 456 is tilted based on the first axis (X axis). For example, when the calculated first distance A is within the critical range, the process is continued, and when the calculated first distance A is out of the critical range, the process is stopped and the tray 456 is notified of the tilt with various signals.

[0118] On the other hand, when the 1-1 sensing sensor 512 is provided, the fourth distance D from the lower surface of the tray 456 can be measured by the 1-1 sensing sensor 512 during the movement of the tray 456 .

[0119] That is, the fourth distance D from the bottom surface of the tray 456 may be measured by the 1-1 sensing sensor 512 while the tray 456 moves toward the chamber 400 or while the tray 456 is separated from the chamber 400 and moves.

[0120] Here, the 1-1th sensing sensor 512 may continuously or repeatedly measure the fourth distance D from the bottom surface of the tray 456 at a predetermined time interval.

[0121] In this case, the fourth distance D measured by the 1-1 sensing sensor 512 may be compared with a reference value to determine the sagging degree of the tray 456. When it is determined through such a process that the fourth distance D to the tray 456 is out of a critical range from the reference value, the control unit may stop the subsequent process performed by the tray 456.

[0122] For example, when the process of the substrate S is completed and the tray 456 is separated and moved from the chamber 400, when the fourth distance D value measured by the 1-1th sensing sensor 512 is out of the critical range, the control unit can terminate the process of the subsequent substrate.

[0123] Figure 7 It is a front view of the tray unit 450 including a second sensing sensor 610 for sensing the tilt of the tray 456 with reference to a second axis (Y axis) parallel to a horizontal plane.

[0124] Reference Figure 7 The second sensing sensor 610 may be composed of a 2-1 sensing sensor 612 for sensing a distance (or height) to one end of the tray 456 and a 2-2 sensing sensor 614 for sensing a distance (or height) to the other end of the tray 456. Here, the one end and the other end of the tray 456 correspond to ends spaced apart from each other along the first axis (X axis).

[0125] Therefore, when the tray 456 is separated from the chamber 400 , the control unit may measure the seventh distance K and the eighth distance L through the 2-1st sensing sensor 612 and the 2-2nd sensing sensor 614 , respectively.

[0126] In this case, the control unit may compare the measured seventh distance K and the eighth distance L to determine whether the tray 456 is tilted based on the second axis (Y axis). For example, when the difference between the measured seventh distance K and the eighth distance L is within the critical range, the process is continued. On the contrary, when the difference between the measured seventh distance K and the eighth distance L is out of the critical range, the process is stopped and the tilt of the tray 456 is notified by various signals.

[0127] on the other hand, Figure 8 1 is a front view showing the tray unit 450 and the chamber 400 including the third sensing sensor 520 for sensing the movement of the tray 456 in the first axis (X axis) direction. Figure 8 (A) is a front view of the tray unit 450, Figure 8 (B) corresponds to a front view of the chamber 400.

[0128] Reference Figure 8 The third sensing sensor 520 may be composed of a 3-1 sensing sensor 522 that senses a distance to a side surface of the tray 456 and a 3-2 sensing sensor 524 that senses a distance to a side surface outside the chamber 400 .

[0129] Here, the 3-1st sensing sensor 522 and the 3-2nd sensing sensor 524 may be arranged at the same distance from the chamber 400 .

[0130] Therefore, when the tray 456 is placed in a state of being separated from the chamber 400, a ninth distance G to one side of the tray 456 may be measured by the 3-1st sensing sensor 522. In addition, a tenth distance H to one side outside the chamber 400 may be measured by the 3-2nd sensing sensor 524. Here, the third distance C between the side of the tray 456 and the inner wall of the processing space 412 may be defined by the following [Formula 2].

[0131] [Formula 2]

[0132] The third distance C = the ninth distance G – (the tenth distance H + the eleventh distance J)

[0133] Here, the eleventh distance J corresponds to the thickness of the side wall of the chamber 400, more precisely, corresponds to the thickness of the side wall provided with the 3-1st sensing sensor 522 and the 3-2nd sensing sensor 524. Such thickness may be predetermined when manufacturing the chamber 400 and stored in the aforementioned control unit.

[0134] Therefore, when the tray 456 is separated from the chamber 400 , the control unit may measure the ninth distance G and the tenth distance H through the 3-1st sensing sensor 522 and the 3-2nd sensing sensor 524 and calculate the third distance C through the [Formula 2].

[0135] The control unit compares the calculated third distance C with a predetermined critical range and determines whether the tray 456 is biased based on the first axis (X axis). For example, when the calculated third distance C is within the critical range, the process is continued, and when the calculated third distance C is out of the critical range, the process is stopped and the tray 456 is notified of the bias using various signals.

[0136] On the other hand, although the Figures 6 to 8 The first sensing sensor 510 , the second sensing sensor 610 , and the third sensing sensor 520 are shown as being respectively provided, but not limited thereto. The substrate processing apparatus 1000 may be provided with at least one of the first sensing sensor 510 , the second sensing sensor 610 , and the third sensing sensor 520 .

[0137] The above description is made with reference to the preferred embodiments of the present invention, but those skilled in the art may make various modifications and changes to the present invention without departing from the concept and scope of the present invention as described in the attached claims. Therefore, if the implementation of the modification basically includes the constituent elements of the claims of the present invention, it should be deemed that all of them belong to the technical scope of the present invention.

Claims

1. A substrate processing device, characterized in that: have: A chamber providing a processing space for performing a processing process on a substrate coated with an organic solvent using a fluid in a supercritical state; a tray that supports the substrate and is disposed so as to be able to be carried into the chamber through the opening of the chamber and taken out of the chamber; and A sensing sensor is used to sense the tilt or deflection of the tray. The sensing sensor includes at least one of a first sensing sensor for sensing the tilt of the tray based on a first axis parallel to a horizontal plane, a second sensing sensor for sensing the tilt of the tray based on a second axis parallel to the horizontal plane, and a third sensing sensor for sensing movement of the tray in the direction of the first axis.

2. The substrate processing device according to claim 1, characterized in that: The first sensing sensor comprises: a 1-1 sensing sensor for sensing a distance to a lower surface of the tray; and The 1-2 sensing sensor senses the distance to the lower surface outside the chamber.

3. The substrate processing device according to claim 2, characterized in that: The first distance between the lower surface of the tray and the base of the processing space is calculated using the following [Formula 1]: [Formula 1] First distance = fourth distance – (fifth distance + sixth distance) The fourth distance is the distance from the lower surface of the tray measured by the 1-1 sensing sensor, the fifth distance is the distance from the lower surface of the outside of the chamber measured by the 1-2 sensing sensor, and the sixth distance is the thickness of the base of the chamber. The substrate processing apparatus further comprises a control unit. The control unit compares the calculated first distance with a predetermined critical range to determine whether the tray is tilted based on the first axis.

4. The substrate processing device according to claim 2, characterized in that: The substrate processing apparatus further comprises a control unit. During the movement of the tray, the 1-1 sensing sensor measures a fourth distance from the bottom surface of the tray. The control unit compares the fourth distance measured by the 1-1th sensing sensor with a predetermined reference value to determine the sagging degree of the tray.

5. The substrate processing device according to claim 4, characterized in that: While the tray moves toward the chamber or while the tray is separated from the chamber and moves, the 1-1th sensing sensor continuously or repeatedly measures a fourth distance to the bottom surface of the tray at predetermined time intervals.

6. The substrate processing apparatus according to claim 1, wherein: The second sensing sensor comprises: A 2-1 sensing sensor that senses a distance from one end of the tray; and The 2-2 sensing sensor senses the distance to the other end of the tray.

7. The substrate processing device according to claim 6, characterized in that: One side end portion and the other side end portion of the tray are ends spaced apart from each other along the first axis.

8. The substrate processing device according to claim 6, characterized in that: The substrate processing apparatus further comprises a control unit. The control unit compares the seventh distance measured by the 2-1st sensing sensor and the eighth distance measured by the 2-2nd sensing sensor to determine whether the tray is tilted based on the second axis.

9. The substrate processing apparatus according to claim 1, wherein: The third sensing sensor comprises: A 3-1 sensing sensor that senses a distance to a side surface of the tray; and The 3-2 sensing sensor senses the distance to one side surface outside the chamber.

10. The substrate processing apparatus according to claim 9, wherein: The third distance between the side surface of the tray and the inner wall of the processing space is calculated using the following [Formula 2]: [Formula 2] The third distance = the ninth distance – (the tenth distance + the eleventh distance) The ninth distance is the distance from one side of the tray measured by the 3-1 sensing sensor, the tenth distance is the distance from one side of the outside of the chamber measured by the 3-2 sensing sensor, and the eleventh distance is the thickness of the side wall of the chamber. The substrate processing apparatus further comprises a control unit. The control unit compares the calculated third distance with a predetermined critical range to determine whether the tray is biased based on the first axis.

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