High-precision synchronization unit system of multi-signal acquisition equipment based on P-MOS (P-Metal Oxide Semiconductor) transistor

Abstract

The invention provides a multi-signal acquisition equipment high-precision synchronization unit system based on a P-MOS tube, the synchronization unit system controls a grid electrode of the P-MOS tube through a synchronization small signal of main equipment (providing synchronization signal pulse output), so that the P-MOS tube is switched on or switched off, a source electrode of the P-MOS tube is connected to a power supply VCC, a drain electrode of the P-MOS tube is connected to other to-be-synchronized equipment, and the P-MOS tube is a voltage type device, so that the P-MOS tube can be switched on or switched off. The MOS tube is controlled to be switched on or switched off by controlling the grid level, so that a large signal is controlled by a small signal, and the aim of synchronizing multiple slave devices is fulfilled. According to the invention, a unique MOS tube solution is adopted, the synchronization unit has an ultra-small size and is widely applied to various scenes with obvious requirements on the size and the power consumption, and compared with a gate circuit or a processor, the driving capability of the MOS tube is greatly improved. And additional power supply management units, program design, heat dissipation and other measures are not needed, the device works immediately after being powered on, and the later maintenance performance is greatly improved.

Description

Technical Field

[0001] The present invention relates to the technical field of multi-channel signal acquisition, and in particular to a high-precision synchronization unit system of a multi-signal acquisition device based on a P-MOS tube. Background Art

[0002] At present, when multiple signal acquisition boards or multiple devices (such as self-contained hydrophones) collect sensor data, since each board or device has an independent processor, crystal oscillator, power-on management IC, etc., the startup time of the processor, the temperature drift jitter of the crystal oscillator, and the slight difference in the power-on timing make the data collected by multiple boards or devices not absolutely synchronized after normal startup. When the sensor data information collected by multiple boards or devices has timing differences, it poses a great challenge to the subsequent algorithm implementation, and even the data is unavailable.

[0003] When collecting multi-channel sensor data, each board or device is required to be strictly synchronized, and the synchronization accuracy of some systems is required to reach the ns level. Currently, the mainstream multi-device synchronization on the market uses a combination of processors and gate circuits. After receiving the synchronization signal, the processor controls the gate circuit output, and the gate circuit output drives a device or multiple devices at the next level.

[0004] However, there are many technical problems in the existing solution: 1. Complex system: The involvement of the processor requires peripheral ICs such as power management and crystal oscillator to be connected to the system, which increases the complexity of the hardware; 2. Increased cost: The increase of processors, gate circuits and peripheral devices has invisibly increased the system cost; 3. Limited driving capability: Although a multi-channel gate circuit chip can output multiple channels, its driving capability is still limited. When it is necessary to drive dozens or even hundreds of slave devices, it will be difficult to achieve the gate circuit solution. First, the PCB board area will increase significantly, and it will become extremely difficult to control dozens of gate circuit chips; 4. Reduced system reliability: The opening and closing of the synchronous output depends on the control of the gate circuit. When the processor crashes, the synchronous output will be uncontrollable. Summary of the invention

[0005] In view of the deficiencies in the prior art, the purpose of the present invention is to provide a high-precision synchronization unit system for a multi-signal acquisition device based on a P-MOS tube to solve the problems raised in the above background technology. The present invention controls the gate of the P-MOS tube through a small synchronization signal of a master device, so that the P-MOS tube is turned on or off. The source of the P-MOS tube is connected to a power supply VCC, and the drain is connected to other devices to be synchronized. Since the P-MOS is a voltage-type device, the gate level is controlled to control the MOS tube to be turned on or off, thereby realizing small signal control of large signal and achieving the purpose of synchronization of multiple slave devices.

[0006] In order to achieve the above-mentioned purpose, the present invention is implemented through the following technical scheme: a high-precision synchronization unit system of a multi-signal acquisition device based on a P-MOS tube, and the operation process of the synchronization unit system includes the following steps: S1. In the initial state, the synchronization signal output port of the master device is at a low level, the transistor Q1 is turned off, VGS≈0V, T1 is turned off, and the synchronization input port of the slave device is at a low level; S2. The master device outputs a synchronization signal pulse; S3. The level state of the synchronization signal input port of the slave device changes with the level change of the synchronization signal output port of the master device, thereby realizing precise synchronization of the master and slave device signals.

[0007] Further, in step S2, when the pulse synchronization signal is at a high level, the transistor is turned on and the G level of the MOS tube is at a low level.

[0008] Furthermore, after the MOS tube is turned on, the synchronous signal input port of the slave device is at a high level.

[0009] Further, in step S2, when the pulse synchronization signal is at a low level, the transistor cut-off MOS tube G level is at a high level.

[0010] Furthermore, after the MOS tube is turned off, the synchronous signal input port of the slave device is at a low level.

[0011] Furthermore, the synchronization unit system controls the gate of the P-MOS tube through a small synchronization signal of an external device, so that the P-MOS tube is turned on or off, the source of the P-MOS tube is connected to the power supply VCC, and the drain is connected to other devices to be synchronized.

[0012] Furthermore, based on the P-MOS tube, the change of the input terminal level will cause the P-MOS tube drain level to change synchronously, thereby realizing the control of the large signal by the small signal.

[0013] Furthermore, it includes using an atomic clock plus a MOS tube drive module and removing the processor and peripherals.

[0014] Beneficial effects of the present invention:

[0015] 1. The high-precision synchronization unit system of the multi-signal acquisition equipment based on P-MOS tube adopts the atomic clock plus MOS tube driving solution, eliminating the processor and peripherals, making the synchronization unit have an ultra-small size, and is widely used in various scenarios with obvious requirements on volume and power consumption.

[0016] 2. The driving capability of the synchronization unit system is greatly improved. Compared with gate circuits or processors, the driving capability of MOS tubes is greatly improved. The input current of the synchronous end of the slave device load is generally calculated in mA. A MOS tube with A-level output capacity will directly drive hundreds or even thousands of slave devices. For example: the input current of the synchronous port of a slave device is 5mA, and a MOS tube with a driving capability of 1A can directly drive 200 slave devices.

[0017] 3. The synchronization unit system has high reliability and does not require additional power management units, program design, heat dissipation and other measures. It works as soon as it is powered on, and the subsequent maintenance performance is greatly improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a circuit schematic diagram of a high-precision synchronization unit system of a multi-signal acquisition device based on a P-MOS tube of the present invention;

[0019] Figure 2 It is a circuit operation flow chart of the present invention;

[0020] Figure 3 The system execution flow chart in the embodiment of the present invention. DETAILED DESCRIPTION

[0021] In order to make the technical means, creative features, objectives and effects achieved by the present invention easy to understand, the present invention is further explained below in conjunction with specific implementation methods.

[0022] See also Figures 1 to 3 The present invention provides the following technical solutions: a high-precision synchronization unit system for multi-signal acquisition equipment based on P-MOS tubes, which is aimed at application scenarios with strict acquisition timing requirements between multi-channel signal acquisition devices, such as multi-element signal acquisition boards, self-contained hydrophones, etc.

[0023] In this embodiment, the P-MOS tube has the characteristics of high input impedance, low noise, and large driving current. In this technical solution, the gate of the P-MOS tube is controlled by the synchronous small signal of the master device, so that the P-MOS tube is turned on or off. The source of the P-MOS tube is connected to the power supply VCC, and the drain is connected to other devices to be synchronized. Since the P-MOS is a voltage-type device, the gate level is controlled to control the MOS tube to be turned on or off, thereby realizing the control of a large signal by a small signal, and achieving the purpose of synchronizing multiple slave devices.

[0024] This embodiment also provides the following flowchart of the circuit operation to further illustrate the system: comprising the following steps:

[0025] 1. In the initial state, the master device synchronization signal output port is low level, transistor Q1 is turned off, VGS≈0V, T1 is turned off, and the slave device synchronization input port is low level;

[0026] 2. The master device outputs a synchronous signal pulse, taking a pulse width of 2ms, a pulse amplitude of 3.3Vpp, and a period of 1s as an example;

[0027] 3. When the pulse synchronization signal is at a high level, the NPN transistor Vbe>0.7V, the transistor is turned on, Vce is close to 0V, the MOS tube G level is at a low level, the MOS tube is turned on, and the slave device synchronization signal input port is at a high level;

[0028] 4. When the pulse synchronization signal is at a low level, the NPN transistor Vbe≈0V, the transistor is cut off, Vce≈5Vcc, the MOS tube G level is at a high level, the MOS tube is cut off, and the slave device synchronization signal input port is at a low level;

[0029] 5. The level state of the slave device synchronization signal input port changes with the level of the master device synchronization signal output port, thereby achieving accurate synchronization of the master and slave device signals.

[0030] Based on the above scheme, the present invention adopts a unique MOS tube solution, which is superior to the current mainstream solution in terms of system complexity, power consumption, and driving capability. It also has the characteristics of modularization and miniaturization: it adopts an atomic clock plus MOS tube driving solution, omitting the processor and peripherals, making the synchronization unit have an ultra-small size, and is widely used in various scenarios with obvious requirements for volume and power consumption.

[0031] At the same time, the driving capability of the present invention is greatly improved: compared with gate circuits or processors, the driving capability of MOS tubes is greatly improved. The input current of the synchronous end of the slave device load is generally calculated in mA. A MOS tube with an A-level output capability can directly drive hundreds or even thousands of slave devices. For example, if the input current of the synchronous port of a slave device is 5 mA, a MOS tube with a driving capability of 1A can directly drive 200 slave devices. No additional power management unit, program design, heat dissipation and other measures are required. It works as soon as it is powered on, and the later maintenance performance is greatly improved.

[0032] The basic principles and main features of the present invention and the advantages of the present invention are shown and described above. For those skilled in the art, it is obvious that the present invention is not limited to the details of the above exemplary embodiments, and the present invention can be implemented in other specific forms without departing from the spirit or basic characteristics of the present invention.

[0033] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

Claims

1. A high-precision synchronization unit system for multi-signal acquisition equipment based on P-MOS tubes, characterized in that: The operation process of the synchronization unit system includes the following steps: S1. In the initial state, the synchronization signal output port of the master device is at a low level, the transistor Q1 is turned off, VGS≈0V, T1 is turned off, and the synchronization input port of the slave device is at a low level; S2. The master device outputs a synchronization signal pulse; S3. The level state of the synchronization signal input port of the slave device changes with the level of the synchronization signal output port of the master device, thereby achieving precise synchronization of the master and slave device signals.

2. According to claim 1, a high-precision synchronization unit system for multi-signal acquisition equipment based on P-MOS tubes is characterized by: In step S2, when the pulse synchronization signal is at a high level, the transistor is turned on and the G level of the MOS tube is at a low level.

3. A high-precision synchronization unit system for multi-signal acquisition equipment based on P-MOS tubes according to claim 2, characterized in that: After the MOS tube is turned on, the synchronization signal input port of the slave device is at a high level.

4. The high-precision synchronization unit system of a multi-signal acquisition device based on a P-MOS tube according to claim 1, characterized in that: In step S2, when the pulse synchronization signal is at a low level, the transistor cut-off MOS tube G level is at a high level.

5. The high-precision synchronization unit system of a multi-signal acquisition device based on a P-MOS tube according to claim 4, characterized in that: After the MOS tube is turned off, the synchronous signal input port of the slave device is at a low level.

6. The high-precision synchronization unit system of a multi-signal acquisition device based on a P-MOS tube according to claim 1, characterized in that: The synchronization unit system controls the gate of the P-MOS tube through a small synchronization signal of an external device, so that the P-MOS tube is turned on or off, the source of the P-MOS tube is connected to the power supply VCC, and the drain is connected to other devices to be synchronized.

7. The high-precision synchronization unit system of a multi-signal acquisition device based on a P-MOS tube according to claim 1, characterized in that: Based on the P-MOS tube, the change of the input terminal level will cause the P-MOS tube drain level to change synchronously, realizing the control of large signals by small signals.

8. The high-precision synchronization unit system of a multi-signal acquisition device based on a P-MOS tube according to claim 1, characterized in that: It includes the use of an atomic clock plus a MOS tube drive module, and the removal of the processor and peripherals.

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