Light-emitting device and preparation method thereof

Abstract

The invention discloses a light-emitting device and a preparation method thereof, and the light-emitting device comprises a substrate, the upper surface of which is provided with a first electrode and a second electrode; the light-emitting unit comprises at least two chips which are distributed at intervals, each chip comprises a P electrode and an N electrode, and the P electrodes and the N electrodes are electrically connected with the first electrodes and the second electrodes through ACF anisotropic conductive films respectively; the isolation conversion unit is arranged above the light emitting unit, the isolation conversion unit comprises an isolation layer and a wavelength conversion structure, the isolation layer is provided with an isolation groove penetrating through the upper surface and the lower surface of the isolation layer above each chip, and at least part of the isolation groove is filled with the wavelength conversion structure. According to the invention, the colorful light-emitting device is realized, and the display effect and the long-term stability of the colorful light-emitting device are effectively improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor devices, and in particular relates to a light emitting device and a preparation method thereof. Background Art

[0002] LED light source is the most widely used light-emitting device at present. It is mostly made of array-type flip-chip LED chips. It is a technical solution to realize pixelated light source and is widely used in light-emitting devices such as display screens and car headlights.

[0003] In the prior art, the colorful LED light source adopts the method of transferring the LED chips of red, green and blue colors to the substrate for packaging respectively. Each pixel needs to transfer the chips of three colors, and the transfer process is complicated and the yield is low. In addition, since three chips with different luminous colors are needed, it is necessary to prepare the LED chips of red, green and blue colors respectively on different epitaxial structures, resulting in poor consistency of the display effects of the three colors of red, green and blue after integration. In particular, in the prior art, the red light LED chip is prepared based on AlGaInP material, which is different from the GaN material of the blue and green light chips, which seriously affects the consistency of the display effect. At the same time, the red light LED chip in the prior art has poor reliability and high cost, and it is urgent to find an effective alternative to the AlGaInP-based red light LED chip.

[0004] In addition, as the size of LED chips shrinks from Mini LED (>100μm) to Micro LED (<100μm), the yield of the traditional Pick&Place packaging process decreases rapidly, and a new matrix transfer process needs to be redeveloped, which requires a lot of time and cost, seriously affecting the further development of colorful light-emitting devices.

[0005] Therefore, in view of the above technical problems, it is necessary to provide a light emitting device and a method for preparing the same. Summary of the invention

[0006] The object of the present invention is to provide a light-emitting device and a method for preparing the same, which can improve the display effect and long-term stability of the multi-colored light-emitting device.

[0007] In order to achieve the above purpose, the technical solution provided by an embodiment of the present invention is as follows:

[0008] A light emitting device, comprising:

[0009] A substrate, wherein a first electrode and a second electrode are provided on an upper surface of the substrate;

[0010] At least one light-emitting unit, the light-emitting unit comprising at least two chips spaced apart, the chip comprising a P electrode and an N electrode, the P electrode and the N electrode being electrically connected to a first electrode and a second electrode respectively through an ACF heteroconductive conductive film;

[0011] The isolation conversion unit is arranged above the light-emitting unit, and the isolation conversion unit includes an isolation layer and a wavelength conversion structure. The isolation layer is provided with an isolation groove penetrating the upper surface and the lower surface of the isolation layer above each chip, and at least part of the isolation groove is filled with the wavelength conversion structure.

[0012] In one embodiment, the substrate is a silicon-based thin film transistor substrate.

[0013] In one embodiment, the projections of the P electrode and the first electrode on the upper surface of the substrate at least partially overlap, and the projections of the N electrode and the second electrode on the upper surface of the substrate at least partially overlap.

[0014] In one embodiment, the light-emitting unit includes a first chip, a second chip, and a third chip that are spaced apart from each other, and the isolation layer is provided with a first isolation groove, a second isolation groove, and a third isolation groove that penetrate the upper surface and the lower surface of the isolation layer above the first chip, the second chip, and the third chip, respectively, and the first isolation groove is filled with a first wavelength conversion structure, and the second isolation groove is filled with a second wavelength conversion structure.

[0015] In one embodiment, the chip is a blue light chip, which includes at least a P-type semiconductor layer, a light-emitting semiconductor layer and an N-type semiconductor layer. The first wavelength conversion structure is used to convert blue light into red light, and the second wavelength conversion structure is used to convert blue light into green light.

[0016] In one embodiment, the third isolation trench is filled with a third wavelength conversion structure.

[0017] In one embodiment, the chip is an ultraviolet chip, which includes at least a P-type semiconductor layer, a light-emitting semiconductor layer and an N-type semiconductor layer. The first wavelength conversion structure is used to convert ultraviolet light into red light, the second wavelength conversion structure is used to convert ultraviolet light into green light, and the third wavelength conversion structure is used to convert ultraviolet light into blue light.

[0018] In one embodiment, the light emitting device further comprises a substrate disposed between the light emitting unit and the isolation conversion unit, and the thickness of the substrate is 5 to 150 μm.

[0019] In one embodiment, the isolation layer is a high reflective adhesive layer or a silicon isolation layer.

[0020] Another embodiment of the present invention provides a technical solution as follows:

[0021] A method for preparing a light emitting device, the method comprising the following steps:

[0022] Providing a substrate, and preparing a first electrode and a second electrode on an upper surface of the substrate;

[0023] Providing a wafer, the wafer comprising a first surface and a second surface arranged opposite to each other, and preparing a light-emitting unit on the first surface of the wafer, the light-emitting unit comprising at least two chips distributed at intervals, the chip comprising a P electrode and an N electrode;

[0024] The chip is packaged on the upper surface of the substrate through an ACF heterogeneous conductive film, and the P electrode and the N electrode are electrically connected to the first electrode and the second electrode respectively through the ACF heterogeneous conductive film;

[0025] An isolation conversion unit is prepared above the second surface of the wafer, wherein the isolation conversion unit includes an isolation layer and a wavelength conversion structure, wherein the isolation layer is provided with an isolation groove penetrating the upper surface and the lower surface of the isolation layer above each chip, and at least a part of the isolation groove is filled with the wavelength conversion structure;

[0026] The packaging structure after preparing the isolation unit is cut to form a plurality of light-emitting devices, wherein the light-emitting device includes at least one light-emitting unit.

[0027] Compared with the prior art, the present invention has the following beneficial effects:

[0028] The present invention uses at least two chips of the same material as light-emitting units, and prepares a wavelength conversion structure for wavelength conversion on the light-emitting units, thereby obtaining a multi-colored light-emitting device. Since the chip materials and light-emitting characteristics in the light-emitting units are highly consistent, the display effect and long-term stability of the multi-colored light-emitting device are effectively improved.

[0029] The present invention simplifies the preparation process of the multi-colored light-emitting device by optimizing the preparation method, reduces the workload, improves the yield, and realizes convenient repair of the light-emitting unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0031] Figure 1 is a schematic structural diagram of a light emitting device in Embodiment 1 of the present invention;

[0032] Figure 2a~2iis a process flow chart of a method for preparing a light-emitting device in Example 1 of the present invention;

[0033] Figure 3 is a schematic structural diagram of a light emitting device in Embodiment 2 of the present invention;

[0034] Figure 4 Schematic diagram of the structure of the light emitting device in Example 3 of the present invention.

[0035] Description of main reference numerals:

[0036] 1-substrate, 111-first electrode, 112-second electrode, 201-substrate, 202-epitaxial structure, 2031-P electrode, 2032-N electrode, 21-first chip, 22-second chip, 22-third chip, 3-ACF anisotropic conductive film, 31-conductive particles, 4-isolation layer, 41-first isolation groove, 42-second isolation groove, 43-third isolation groove, 51-first wavelength conversion structure, 52-second wavelength conversion structure, 53-third wavelength conversion structure. DETAILED DESCRIPTION

[0037] In order to enable those skilled in the art to better understand the technical solutions in the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0038] The present invention discloses a light emitting device, comprising:

[0039] A substrate, wherein a first electrode and a second electrode are provided on an upper surface of the substrate;

[0040] At least one light-emitting unit, the light-emitting unit includes at least two chips distributed at intervals, the chip includes a P electrode and an N electrode, and the P electrode and the N electrode are electrically connected to the first electrode and the second electrode respectively through an ACF heteroconductive conductive film;

[0041] The isolation conversion unit is arranged above the light-emitting unit. The isolation conversion unit includes an isolation layer and a wavelength conversion structure. The isolation layer is provided with an isolation groove penetrating the upper surface and the lower surface of the isolation layer above each chip, and at least part of the isolation groove is filled with the wavelength conversion structure.

[0042] The present invention also discloses a method for preparing a light emitting device, comprising the following steps:

[0043] Providing a substrate, and preparing a first electrode and a second electrode on an upper surface of the substrate;

[0044] Providing a wafer, the wafer comprising a first surface and a second surface arranged opposite to each other, and preparing a light-emitting unit on the first surface of the wafer, the light-emitting unit comprising at least two chips distributed at intervals, and the chip comprising a P electrode and an N electrode;

[0045] The chip is packaged on the upper surface of the substrate through an ACF heterogeneous conductive film, and the P electrode and the N electrode are electrically connected to the first electrode and the second electrode respectively through the ACF heterogeneous conductive film;

[0046] An isolation conversion unit is prepared above the second surface of the wafer, the isolation conversion unit comprising an isolation layer and a wavelength conversion structure, the isolation layer is provided with an isolation groove penetrating the upper surface and the lower surface of the isolation layer above each chip, and at least part of the isolation groove is filled with the wavelength conversion structure;

[0047] The packaging structure after preparing the isolation unit is cut to form a plurality of light-emitting devices, wherein the light-emitting device includes at least one light-emitting unit.

[0048] The present invention is further described below with reference to specific examples.

[0049] Embodiment 1:

[0050] Ginseng Figure 1 As shown, the light emitting device in this embodiment includes:

[0051] A substrate 1, on the upper surface of which a first electrode 111 and a second electrode 112 are provided;

[0052] At least one light-emitting unit, the light-emitting unit includes at least two spaced chips, the chip includes a P electrode 2031 and an N electrode 2032, the P electrode 2031 and the N electrode 2032 are electrically connected to the first electrode 111 and the second electrode 112 respectively through an ACF (Anisotropic Conductive Film) anisotropic conductive film 3;

[0053] The isolation conversion unit is arranged above the light-emitting unit. The isolation conversion unit includes an isolation layer 4 and a wavelength conversion structure. The isolation layer 4 is provided with an isolation groove penetrating the upper and lower surfaces of the isolation layer above each chip, and at least part of the isolation groove is filled with the wavelength conversion structure.

[0054] The substrate 1 in this embodiment is a silicon-based thin film transistor substrate.

[0055] Exemplarily, the light emitting unit in this embodiment includes three first chips 21 , second chips 22 and third chips 23 which are spaced apart from each other.

[0056] Specifically, the first chip 21, the second chip 22 and the third chip 23 in this embodiment are the same type of chips, all of which are blue light chips. The chip at least includes a P-type semiconductor layer, a light-emitting semiconductor layer, an N-type semiconductor layer, a P electrode 2031 and an N electrode 2032. The material of the P-type semiconductor layer is Al x1 In y1 Ga (1-x1-y1) The semiconductor material of the N-type semiconductor layer is Al X2 In y2 Ga (1-x2-y2) The semiconductor material may be N (0≤x2≤1, 0≤y2≤1, 0≤x2+y2≤1), but is not limited thereto. The P electrode 2031 is electrically connected to the P-type semiconductor layer, and the N electrode 2032 is electrically connected to the N-type semiconductor layer.

[0057] Exemplarily, in this embodiment, the ACF anisotropic conductive film 3 is a resin-based material containing conductive particles 31, and the P electrode 2031 and the N electrode 2032 are electrically connected to the first electrode 111 and the second electrode 112 respectively through the conductive particles 31, and the projections of the P electrode 2031 and the first electrode 111 on the upper surface of the substrate 1 at least partially overlap, and the projections of the N electrode 2032 and the second electrode 112 on the upper surface of the substrate 1 at least partially overlap.

[0058] Combination Figure 2h As shown, the isolation layer 4 in this embodiment is provided with a first isolation groove 41, a second isolation groove 42 and a third isolation groove 43 respectively penetrating the upper surface and the lower surface of the isolation layer 4 above the first chip 21, the second chip 22 and the third chip 23. The isolation layer 4 is a light-proof material such as a high-reflective adhesive layer and a silicon isolation layer to prevent light crosstalk. In this embodiment, a light-proof high-reflective adhesive layer with reflective performance is preferred.

[0059] It is understandable that the number of isolation grooves must correspond to the number of chips, and an isolation groove penetrating the upper surface and the lower surface of the isolation layer must be provided above each chip.

[0060] Further, the first isolation groove 41 is filled with a first wavelength conversion structure 51, and the second isolation groove 42 is filled with a second wavelength conversion structure 52. The first wavelength conversion structure 51 is used to convert blue light into red light, and the second wavelength conversion structure 52 is used to convert blue light into green light. The wavelength conversion structure can be a fluorescent sheet or other color conversion material, and in this example, a fluorescent sheet is preferably bonded to a side surface of the chip where the P electrode 2031 and the N electrode 2032 are not provided.

[0061] In addition, a substrate 201 is provided between the light emitting unit and the isolation conversion unit in this embodiment, and the thickness of the substrate 201 can be adjusted accordingly according to actual needs, generally 5 to 150 μm. Exemplarily, the substrate 201 in this embodiment is a sapphire substrate.

[0062] The method for preparing the light emitting device in this embodiment comprises the following steps:

[0063] S1: Reference Figure 2a As shown, a substrate 1 is provided, and a first electrode 111 and a second electrode 112 are prepared on the upper surface of the substrate.

[0064] Specifically, the substrate 1 in this embodiment is a silicon-based thin film transistor substrate, and a plurality of groups of first electrodes 111 and second electrodes 112 are prepared on the substrate 1 .

[0065] S2: Provide a wafer, the wafer including a first surface and a second surface arranged opposite to each other, and prepare a light-emitting unit on the first surface of the wafer, the light-emitting unit including at least two chips distributed at intervals, and the chip including a P electrode 2301 and an N electrode 2302.

[0066] Specifically, this step includes the following steps:

[0067] 1. Ginseng Figure 2b As shown, a substrate 201 is provided, and an epitaxial structure 202 is grown on the substrate 201 to obtain a wafer. The substrate 201 in this embodiment is preferably a sapphire substrate, and the epitaxial structure 202 includes at least a P-type semiconductor layer, a light-emitting semiconductor layer, and an N-type semiconductor layer.

[0068] 2. Ginseng Figure 2c As shown, the epitaxial structure 202 is etched to form a plurality of chips arranged in an array. The epitaxial structure 202 between adjacent chips is etched cleanly, so that each chip is completely isolated and not affected by each other.

[0069] 3. Ginseng Figure 2d As shown, a P electrode 2031 electrically connected to the P-type semiconductor layer and an N electrode 2032 electrically connected to the N-type semiconductor layer are prepared.

[0070] 4. Group the chips to form a plurality of light-emitting units, each of which includes at least two adjacent and mutually isolated chips.

[0071] Exemplarily, the light emitting unit in this embodiment includes a first chip 21 , a second chip 22 and a third chip 23 which are spaced apart from each other.

[0072] S3: Reference Figure 2eAs shown, the chip is packaged on the upper surface of the substrate 1 through the ACF heterogeneous conductive film 3, and the P electrode 2301 and the N electrode 2302 are electrically connected to the first electrode 111 and the second electrode 112 respectively through the ACF heterogeneous conductive film 3.

[0073] Specifically, an ACF heterogeneous conductive film 3 is first prepared on the upper surface of the substrate 1, and then the chip is flip-chip packaged on the upper surface of the substrate 1. During the packaging process, the entire wafer needs to be aligned with the substrate 1, and the P electrode 2031 and the N electrode 2032 on each chip are respectively aligned with the first electrode 111 and the second electrode 112. The P electrode 2031 and the N electrode 2032 are respectively electrically connected to the first electrode 111 and the second electrode 112 through the conductive particles 31 in the ACF heterogeneous conductive film 3.

[0074] Ginseng Figure 2f As shown, after the chip is flip-chip packaged on the upper surface of the substrate 1, the substrate 201 is thinned. The thickness of the substrate 201 is adjusted according to the overall needs of the light-emitting device, and is generally 5 to 150 μm.

[0075] S4: Prepare an isolation conversion unit above the second surface of the wafer, the isolation conversion unit including an isolation layer 4 and a wavelength conversion structure, the isolation layer 4 is provided with an isolation groove penetrating the upper and lower surfaces of the isolation layer 4 above each chip, and at least part of the isolation groove is filled with the wavelength conversion structure.

[0076] Specifically, this step includes the following steps:

[0077] 1. Ginseng Figure 2g As shown, an isolation layer 4 is prepared on the surface of the substrate 201 opposite to the epitaxial structure 202, and the isolation layer 4 is preferably a high-reflection adhesive layer.

[0078] 2. Ginseng Figure 2h As shown, the isolation layer 4 is photolithographically and etched to form a first isolation trench 41 , a second isolation trench 42 and a third isolation trench 43 penetrating the upper and lower surfaces of the isolation layer 4 above the first chip 21 , the second chip 22 and the third chip 23 , respectively.

[0079] 3. Ginseng Figure 2i As shown, the first wavelength conversion structure 51 is filled in the first isolation groove 41, and the second wavelength conversion structure 52 is filled in the second isolation groove 42. In this embodiment, the first wavelength conversion structure 51 is used to convert blue light into red light, and the second wavelength conversion structure 52 is used to convert blue light into green light.

[0080] S5. Cut the packaging structure after preparing the isolation unit to form a plurality of light-emitting devices, wherein the light-emitting device includes at least one light-emitting unit.

[0081] Specifically, after the preparation of the isolation unit is completed, the packaging structure can be cut according to actual needs to form a plurality of light-emitting devices, and each light-emitting device can include one light-emitting unit or a plurality of light-emitting units.

[0082] Embodiment 2:

[0083] Ginseng Figure 3 As shown, the structure and preparation method of the light emitting device in this embodiment are substantially the same as those in Embodiment 1, except that the chip in this embodiment is an ultraviolet chip, and the third groove 43 above the third chip 23 is filled with a third wavelength conversion structure 53. In addition, in this embodiment, the first wavelength conversion structure 51 is used to convert ultraviolet light into red light, the second wavelength conversion structure 52 is used to convert ultraviolet light into green light, and the third wavelength conversion structure 53 is used to convert ultraviolet light into blue light.

[0084] Embodiment 3:

[0085] Ginseng Figure 4 As shown, the structure and preparation method of the light-emitting device in this embodiment are roughly the same as those in Example 1, except that no substrate is provided between the light-emitting unit and the isolation conversion unit in this embodiment, and the isolation conversion unit is prepared on the light-emitting unit. That is, in this embodiment, after the thinning of the substrate is completed, the substrate needs to be peeled off and removed to achieve further thinning of the light-emitting device.

[0086] Embodiment 4:

[0087] The structure and preparation method of the light-emitting device in this embodiment are substantially the same as those in Embodiment 1, except that the isolation layer in this embodiment is a silicon isolation layer. At the same time, in the process of preparing the wafer, silicon is directly used as the substrate. After the whole wafer is bonded to the substrate, the silicon substrate also needs to be thinned, but there is no need to prepare an isolation layer such as a high-reflective adhesive layer on the silicon substrate. The silicon substrate above each chip is directly etched to form an isolation groove that runs through the upper and lower surfaces of the silicon substrate. The silicon substrate with the isolation groove is directly used as the isolation layer, and the isolation groove is filled with color conversion materials such as a quantum dot layer or a fluorescent sheet.

[0088] It can be seen from the above technical solution that the present invention has the following beneficial effects:

[0089] The present invention uses at least two chips of the same material as light-emitting units, and prepares a wavelength conversion structure for wavelength conversion on the light-emitting units, thereby obtaining a multi-colored light-emitting device. Since the chip materials and light-emitting characteristics in the light-emitting units are highly consistent, the display effect and long-term stability of the multi-colored light-emitting device are effectively improved.

[0090] The present invention simplifies the preparation process of the multi-colored light-emitting device by optimizing the preparation method, reduces the workload, improves the yield, and realizes convenient repair of the light-emitting unit.

[0091] It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above and that the invention can be implemented in other specific forms without departing from the spirit or essential features of the invention. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations falling within the meaning and scope of the equivalent elements of the claims be included in the invention. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.

[0092] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

Claims

1. A light emitting device, characterized in that: The light emitting device comprises: A substrate, wherein a first electrode and a second electrode are provided on an upper surface of the substrate; At least one light-emitting unit, the light-emitting unit comprising at least two chips spaced apart, the chip comprising a P electrode and an N electrode, the P electrode and the N electrode being electrically connected to a first electrode and a second electrode respectively through an ACF heteroconductive conductive film; The isolation conversion unit is arranged above the light-emitting unit, and the isolation conversion unit includes an isolation layer and a wavelength conversion structure. The isolation layer is provided with an isolation groove penetrating the upper surface and the lower surface of the isolation layer above each chip, and at least part of the isolation groove is filled with the wavelength conversion structure.

2. The light emitting device according to claim 1, characterized in that: The substrate is a silicon-based thin film transistor substrate.

3. The light emitting device according to claim 1, characterized in that: The P electrode at least partially overlaps with the projection of the first electrode on the upper surface of the substrate, and the N electrode at least partially overlaps with the projection of the second electrode on the upper surface of the substrate.

4. The light emitting device according to claim 1, characterized in that: The light-emitting unit includes a first chip, a second chip and a third chip that are spaced apart from each other. The isolation layer is provided with a first isolation groove, a second isolation groove and a third isolation groove that penetrate the upper surface and the lower surface of the isolation layer above the first chip, the second chip and the third chip, respectively. The first isolation groove is filled with a first wavelength conversion structure, and the second isolation groove is filled with a second wavelength conversion structure.

5. The light emitting device according to claim 4, characterized in that: The chip is a blue light chip, which at least includes a P-type semiconductor layer, a light-emitting semiconductor layer and an N-type semiconductor layer. The first wavelength conversion structure is used to convert blue light into red light, and the second wavelength conversion structure is used to convert blue light into green light.

6. The light emitting device according to claim 4, characterized in that: The third isolation groove is filled with a third wavelength conversion structure.

7. The light emitting device according to claim 6, characterized in that: The chip is an ultraviolet chip, which includes at least a P-type semiconductor layer, a light-emitting semiconductor layer and an N-type semiconductor layer. The first wavelength conversion structure is used to convert ultraviolet light into red light, the second wavelength conversion structure is used to convert ultraviolet light into green light, and the third wavelength conversion structure is used to convert ultraviolet light into blue light.

8. The light emitting device according to claim 1, characterized in that: The light emitting device further comprises a substrate arranged between the light emitting unit and the isolation conversion unit, and the thickness of the substrate is 5-150 μm.

9. The light emitting device according to claim 1, characterized in that: The isolation layer is a high-reflection adhesive layer or a silicon isolation layer.

10. A method for preparing a light emitting device, characterized in that: The preparation method comprises the following steps: Providing a substrate, and preparing a first electrode and a second electrode on an upper surface of the substrate; Providing a wafer, the wafer comprising a first surface and a second surface arranged opposite to each other, and preparing a light-emitting unit on the first surface of the wafer, the light-emitting unit comprising at least two chips distributed at intervals, the chip comprising a P electrode and an N electrode; The chip is packaged on the upper surface of the substrate through an ACF heterogeneous conductive film, and the P electrode and the N electrode are electrically connected to the first electrode and the second electrode respectively through the ACF heterogeneous conductive film; An isolation conversion unit is prepared above the second surface of the wafer, wherein the isolation conversion unit includes an isolation layer and a wavelength conversion structure, wherein the isolation layer is provided with an isolation groove penetrating the upper surface and the lower surface of the isolation layer above each chip, and at least part of the isolation groove is filled with the wavelength conversion structure; The packaging structure after preparing the isolation unit is cut to form a plurality of light-emitting devices, wherein the light-emitting device includes at least one light-emitting unit.

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