Light-emitting element, light-emitting diode and display device

Abstract

The invention provides a light-emitting element, light-emitting diodes and a display device.The light-emitting element comprises a plurality of light-emitting diodes, a supporting structure and a bridging structure, and the bridging structure is located on part of the side walls of the light-emitting diodes and connected with the light-emitting diodes and the supporting structure. The light emitting diode at least comprises a semiconductor epitaxial laminated layer, and the semiconductor epitaxial laminated layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially laminated along a first direction. A gap is formed between the bridging structure and the light emitting diode, and in the first direction, the gap does not completely penetrate through the bridging structure. When the light-emitting diodes are transferred in a large amount and are grabbed, the gap ensures that the bridging structure can be fractured at the gap and ensures that the bridging structure fixes the fracture position, and meanwhile, the fractured bridging structure has a basically flush section instead of the residue of a stamp edge sample, so that the good appearance of a single core particle is ensured, and the service life of the single core particle is prolonged. And meanwhile, the mass transfer yield of the light-emitting diode can be improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor devices, and in particular to a light emitting element, a light emitting diode and a display device. Background Art

[0002] Micro Light Emitting Diode (Micro-LED) has the advantages of self-luminescence, high efficiency, low power consumption, high brightness, high stability, ultra-high resolution and color saturation, fast response speed and long life. It has been applied in display, optical communication, indoor positioning, biology and medical fields, and has a clear and promising market prospect.

[0003] There are still many technical challenges that Micro-LED needs to overcome, and one of the important technical challenges is how to improve the yield of mass transfer. During the mass transfer of Micro-LED, the Micro-LED will first be initially carried and fixed by the anchor chain structure. When grabbing and transferring Micro-LED from the above-mentioned anchor chain structure, a higher grasping force is required, and the anchor chain break position is not fixed. In addition, there will be certain irregular residues at the break of the anchor chain, and the same core particle will also have inconsistent anchor chains remaining on both sides of the side walls. The above-mentioned abnormal anchor chain residue phenomenon affects the yield of Micro-LED mass transfer, and then affects the yield and reliability of subsequent products. Summary of the invention

[0004] In view of the above-mentioned problems and defects in the mass transfer of Micro-LED in the prior art, the present application provides a light-emitting element and a light-emitting diode. The light-emitting element of the present invention includes: a plurality of light-emitting diodes, a support structure and a bridge structure. The light-emitting diode at least includes a semiconductor epitaxial stack, and the semiconductor epitaxial stack includes a first semiconductor layer, an active layer and a second semiconductor layer stacked in sequence along a first direction. The bridge structure is located on a part of the side wall of the light-emitting diode, connecting the light-emitting diode and the support structure. There is a gap between the bridge structure and the light-emitting diode. In the first direction, the gap does not completely penetrate the bridge structure. The formation of the gap can ensure that when the light-emitting diode is grabbed, the bridge structure can be broken at the gap, ensuring that the bridge structure fixes the broken position. At the same time, the bridge structure after the break has a basically flush cross-section, rather than a stamp edge-like residue, so that the mass transfer yield and appearance yield of the light-emitting diode can be improved.

[0005] To achieve the above-mentioned object and other related objects, the present invention provides a light-emitting element, which includes:

[0006] A plurality of light-emitting diodes, each of which comprises at least a semiconductor epitaxial stack, wherein the semiconductor epitaxial stack comprises a first semiconductor layer, an active layer and a second semiconductor layer sequentially stacked along a first direction;

[0007] A supporting structure, located below the light emitting diode, supporting the light emitting diode;

[0008] The bridging structure is located on a part of the side wall of the light emitting diode, connecting the light emitting diode and the supporting structure, and there is a gap between the bridging structure and the light emitting diode. In the first direction, the gap does not completely penetrate the bridging structure.

[0009] Another aspect of the present invention provides a light-emitting structure, wherein the light-emitting diode is a core particle obtained by transfer separation from the light-emitting element described in the present application, and the side wall of the core particle has the residual bridge structure.

[0010] Another aspect of the present invention provides a display device, which includes a circuit substrate and a plurality of light-emitting bodies fixed on the circuit substrate, wherein the light-emitting bodies include light-emitting diodes transferred in batches from the light-emitting elements described in the present application.

[0011] As described above, the light emitting element, light emitting diode and display device provided by the present invention have at least the following beneficial technical effects:

[0012] The light-emitting element of the present invention includes a plurality of light-emitting diodes, a support structure and a bridge structure. The bridge structure is located on a part of the side wall of the light-emitting diode, connecting the light-emitting diode and the support structure. The light-emitting diode includes at least a semiconductor epitaxial stack, and the semiconductor epitaxial stack includes a first semiconductor layer, an active layer and a second semiconductor layer stacked in sequence along a first direction. There is a gap between the bridge structure and the light-emitting diode, and in the first direction, the gap does not completely penetrate the bridge structure. When the light-emitting diode is mass-transferred and the light-emitting diode is captured, the gap ensures that the bridge structure can be broken at the gap, ensuring that the bridge structure fixes the fracture position, and at the same time, the bridge structure after the fracture has a basically flush cross-section, rather than a stamp edge-like residue, thereby not only ensuring the good appearance of a single core particle, but also improving the mass transfer yield of the light-emitting diode. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 The diagram shows a top view of the structure of a light emitting element in the prior art.

[0014] Figure 2 Shown is a schematic structural diagram of a light-emitting element provided in Embodiment 1 of the present invention.

[0015] Figure 3 Display as Figure 2 Schematic diagram of the structure of the light-emitting diode.

[0016] Figure 4 Shown is a schematic structural diagram of a light emitting element provided in an optional embodiment.

[0017] Figure 5 Display as Figure 4 Schematic diagram of the structure of the light-emitting diode.

[0018] Figure 6 Display as Figure 4 Schematic diagram of the top view of the structure in the middle rectangular frame.

[0019] Figure 7 Display as Figure 6 Schematic diagram of the enlarged structure of the bridge structure.

[0020] Figure 8 An alternative embodiment is shown along Figure 6 Schematic diagram of the cross-sectional structure along the AA direction.

[0021] Fig. 9 Another alternative embodiment is shown along Figure 6 Schematic diagram of the cross-sectional structure along the AA direction.

[0022] Fig.10 Shown is a schematic diagram of a top view of the structure of a light emitting element provided in the second embodiment.

[0023] Fig.11 Shown is a schematic diagram of the top view structure of the light emitting element provided in the third embodiment.

[0024] Fig.12 The schematic diagram of the top view of the light emitting element provided in the fourth embodiment is implemented.

[0025] Fig.13 Shown is a schematic structural diagram of a light emitting diode provided in Embodiment 5 of the present invention.

[0026] Fig.14 Shown is a schematic diagram of the structure of a display device provided in Embodiment 6 of the present invention.

[0027] Reference numerals

[0028] 10. Micro-LED; 11. Bridge arm.

[0029] 100, light-emitting element; 110, supporting structure; 111, substrate; 112 bonding layer; 113, groove; 120, light-emitting diode; 121, semiconductor epitaxial stack; 1211, first semiconductor layer; 1212, active layer; 1213, second semiconductor layer; 1214, first table; 1215, light-emitting surface; 1216, table hole; 1217, second table; 122, sacrificial layer; 123, electrode structure; 1231, first electrode; 1232, second electrode; 1233, first contact electrode; 1234, second contact electrode; 130, bridging structure; 131, first insulating layer; 132, second insulating layer; 133, gap; 134, step structure.

[0030] 200, display device; 201, light-emitting body; 202, circuit substrate. DETAILED DESCRIPTION

[0031] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0032] It should be noted that the illustrations provided in this embodiment only illustrate the basic concept of the present invention in a schematic manner. Although the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation, the form, quantity, positional relationship and proportion of each component in actual implementation can be changed at will under the premise of realizing the technical solution of this party, and the component layout form may also be more complicated.

[0033] like Figure 1 As shown, in the prior art, during mass transfer, a bridge arm 11 is formed at the two opposite side walls of Micro-LED 10, and the bridge arm 11 is usually an insulating material layer tightly connected to the side wall of Micro-LED 10. When transferring Micro-LED 10, it is necessary to grab Micro-LED 10, and the bridge arm 11 is broken to achieve grabbing. However, due to the above-mentioned characteristics of the bridge arm 11, it cannot be guaranteed that the breaking positions of different bridge arms are fixed when breaking; in addition, the cross-section of the bridge arm 11 after breaking is usually also displayed as a stamp-like torn cross-section rather than a flat cross-section. This will affect the appearance of Micro-LED 10, and then affect the yield of mass transfer, and therefore also affect the yield and reliability of subsequent devices. In order to solve this problem, the present invention provides a light-emitting element and a light-emitting diode. It is now described in detail through the following specific embodiments.

[0034] Embodiment 1

[0035] This embodiment provides a light emitting element, such as Figure 2 As shown, the light emitting element 100 of this embodiment includes a plurality of light emitting diodes 120, a supporting structure 110, and a bridging structure 130. Figure 2 As shown, the support structure 110 is formed with a plurality of grooves 113 , and the LEDs 120 are accommodated in the grooves 113 in a one-to-one correspondence with the grooves 113 . The bridging structure 130 bridges between adjacent grooves 113 to connect the LEDs 120 and the support structure 110 , and supports the LEDs 120 at the same time.

[0036] like Figure 3 As shown, the light emitting diode 120 in this embodiment is a micro light emitting diode 120, which refers to a micron-sized light emitting diode 120. Since the size of the micro light emitting diode 120 is small, the micro light emitting diode 120 in this embodiment mainly refers to a light emitting diode 120 with a size (including length, width or height) ranging from greater than or equal to 2 μm to less than 5 μm, from greater than or equal to 5 μm to less than 10 μm, from greater than or equal to 10 μm to less than 20 μm, from greater than or equal to 20 μm to less than 50 μm or from greater than or equal to 50 μm to less than or equal to 100 μm. The above-mentioned several are generally understood to be greater than or equal to 1.

[0037] Also refer to Figure 3 The light emitting diode 120 at least comprises a semiconductor epitaxial stack 121, which comprises a first semiconductor layer 1211, an active layer 1212 and a second semiconductor layer 1213 stacked in sequence along a first direction (i.e., the Z direction in the figure). In this embodiment, the semiconductor epitaxial stack 121 is formed into a mesa structure, specifically, comprises a first mesa 1214 and a second mesa 1217, wherein the first mesa 1214 is formed by the first semiconductor layer 1211 exposed by the depression of the semiconductor epitaxial stack 121; the second mesa 1217 is formed by the stacked first semiconductor layer 1211, the active layer 1212 and the second semiconductor layer 1213. The light emitting diode 120 further includes an electrode structure 123, wherein a first electrode 1231 is formed on the first mesa 1214 and is electrically connected to the first semiconductor layer 1211; in some embodiments, a first contact electrode 1233 is further formed between the first electrode 1231 and the first semiconductor layer 1211 to form an ohmic contact with the first semiconductor layer 1211. A second electrode 1232 of the electrode structure 123 is formed on the second mesa 1217 and is electrically connected to the second semiconductor layer 1213; in some embodiments, a second contact electrode 1234 is further formed between the second electrode 1232 and the second semiconductor layer 1213 to form an ohmic contact with the second semiconductor layer 1213.

[0038] In an alternative embodiment, the first semiconductor layer 1211 may be composed of a III-V group or a II-VI group compound semiconductor and may be doped with a first dopant. The first type semiconductor layer 101 may be composed of a compound semiconductor having a chemical formula of In x1 Al y1 Ga 1-x1-y1 N (0≤X1≤1, 0≤Y1≤1, 0≤X1+Y1≤1) semiconductor material, such as GaN, AlGaN, InGaN, InAlGaN, etc., or a material selected from AlGaAs, GaP, GaAs, GaAsP and AlGaInP. In addition, the above-mentioned first dopant can be an n-type dopant, such as any one or more of Si, Ge, Sn, Se and Te. When the first dopant is an n-type dopant, the first semiconductor layer 1211 doped with the first dopant is an n-type semiconductor layer. The first dopant can also be a p-type dopant, such as any one or more of Mg, Zn, Ca, Sr and Ba. In this case, the first semiconductor layer 1211 doped with the first dopant is a p-type semiconductor layer.

[0039] like Figure 2 As shown, the surface of the first semiconductor layer 1211 away from the support structure 110 is the light emitting surface 1215. In order to improve the light extraction efficiency of the light emitting diode 120, the surface of the first semiconductor layer 1211 away from the support structure 110 may be roughened to form a roughened structure. In some optional embodiments, the surface of the first semiconductor layer 1211 away from the support structure 110 may not be roughened.

[0040] like Figure 3 As shown, the active layer 1212 is disposed between the first semiconductor layer 1211 and the second semiconductor layer 1213. The active layer 1212 is a region for providing light radiation for electron and hole recombination. Different materials can be selected according to different luminous wavelengths. The active layer 1212 can be a periodic structure of a single quantum well or a multi-quantum well. The active layer 1212 includes a well layer and a barrier layer, wherein the barrier layer has a larger band gap than the well layer. By adjusting the composition ratio of the semiconductor material in the active layer 1212, it is expected to radiate light of different wavelengths.

[0041] The second semiconductor layer 1213 is formed on the active layer 1212 and may be composed of a group III-V or group II-VI compound semiconductor. The second semiconductor layer 1213 may be doped with a second dopant. The second semiconductor layer 1213 may be composed of a compound semiconductor having a chemical formula of In x2 Al y2 G a1-x2-y2N (0≤X2≤1, 0≤Y2≤1, 0≤X2+Y2≤1) semiconductor material, or a material selected from AlGaAs, GaP, GaAs, GaAsP and AlGaInP. When the second dopant is a p-type dopant, such as any one or more of Mg, Zn, Ca, Sr and Ba, the second semiconductor layer 1213 doped with the second dopant is a p-type semiconductor layer. The second dopant may also be an n-type dopant, such as any one or more of Si, Ge, Sn, Se and Te. When the second dopant is an n-type dopant, the second semiconductor layer doped with the second dopant is an n-type semiconductor layer. When the first semiconductor layer is an n-type semiconductor layer, the second semiconductor layer is a p-type semiconductor layer; conversely, when the first semiconductor layer 1211 is a p-type semiconductor layer, the second semiconductor layer 1213 is an n-type semiconductor layer.

[0042] In an optional embodiment, the material of the first contact electrode 1233 and the second contact electrode 1234 may be Au / AuZn / Au or Au / BeAu / Au or AuGeNi multilayer structure, and the first electrode 1231 and the second electrode 1232 may be formed of one or a combination of two or more materials selected from Au, Ag, Al, Pt, Ti, Ni and Cr. In some embodiments, the first electrode 1231 and the second electrode 1232 may be formed of reflective metal Au or Al, thereby improving the light extraction efficiency of the light emitting diode 120 and improving the light emitting brightness of the light emitting diode 120. Figure 3 In the light emitting diode 120 shown, the first electrode 1231 is formed on the first table 1214 and extends above the second table 1217, flush with the second electrode 1232. The design of the first electrode 1231 bridging the second table 1217 facilitates subsequent packaging and improves packaging yield.

[0043] In another optional embodiment of the present application, Figure 4 and Figure 5 As shown, the sidewall of the light emitting diode 120 in the light emitting element 100 is formed as a one-stage structure, that is, there is no Figure 3 The first mesa 1214 or the second mesa 1217 is shown. A mesa hole 1216 is formed in the semiconductor epitaxial stack 121, and the mesa hole 1216 is formed in the first semiconductor layer 1211 from one side of the second semiconductor layer 1213 through the second semiconductor layer 1213 and the active layer 1212. The first contact electrode 1233 is formed at the bottom of the mesa hole 1216 and contacts the first semiconductor layer 1211. The first electrode 1231 extends to the top of the second semiconductor layer 1213 through the mesa hole 1216 and is flush with the second electrode 1232. This design of the first electrode 1231 and the second electrode 1232 is conducive to the welding of the light-emitting diode 120 after subsequent transfer.

[0044] It is understandable that the semiconductor epitaxial stack 121 may also include other layer materials, such as a current spreading layer, a window layer or an ohmic contact layer, etc., which are arranged as different multilayers according to different doping concentrations or component contents. The epitaxial stack structure can be formed by physical vapor deposition (PVD), chemical vapor deposition (CVD), epitaxial growth (Epitaxy Growth Technology) and atomic beam deposition (ALD). In this embodiment, the semiconductor epitaxial stack 121 is preferably composed of AlGaInP-based materials, and the semiconductor epitaxial stack 121 radiates red light. However, the present invention is not limited to red light micro-LEDs 120, and the present invention is also applicable to blue-green light micro-LEDs 120.

[0045] In order to improve the reliability of the light emitting diode 120, as Figure 3 As shown, the first mesa 1214 and the second mesa 1217 of the light emitting diode 120 have a first insulating layer 131 on their surfaces and sidewalls. The first insulating layer 131 may be a Bragg reflector (DBR) structure, which is formed by alternating stacking of two insulating dielectric layer materials with different refractive indices, such as SiO2, SiN x , TiO2, Al2O3 and other non-metallic materials. The Bragg reflector can reflect the light radiated by the semiconductor epitaxial stack 121 to the light emitting surface 1215, thereby improving the light emitting efficiency of the light emitting diode 120. The thickness of the first insulating layer 131 is greater than or equal to 0.5 μm. In some embodiments, in order to ensure the strength of the bridge structure 130 formed subsequently, the thickness of the first insulating layer 131 on the surface of the first table 1214 ranges from 0.5 μm to 3 μm.

[0046] Also refer to Figure 2 The support structure 110 includes a substrate 111 and a bonding layer 112 located above the substrate 111, and the above-mentioned grooves 113 are formed by the bonding layer 112. In an optional embodiment, the substrate 111 can be any suitable substrate 111 that can play a supporting role, such as a sapphire substrate 111, a glass substrate 111, a ceramic substrate 111, etc. The bonding layer 112 can be a material layer that has a certain degree of adhesion and is conducive to separation, such as BCB glue, silica gel, UV ultraviolet glue or resin. The bridging structure 130 is located above the bonding layer 112 in a platform structure between adjacent grooves 113.

[0047] Also refer to Figure 2The bridge structure 130 includes the first insulating layer 131 and may also include a second insulating layer 132 formed on the first insulating layer 131. The first insulating layer 131 in the bridge structure 130 is formed by extending from the first table 1214 of the light-emitting diode 120. For example, after the semiconductor epitaxial structure is transferred to the support structure 110, when the semiconductor epitaxial stack 121 is etched and divided to form a plurality of independent light-emitting diodes 120, the first insulating layer 131 between adjacent light-emitting diodes 120 is retained to form the bridge structure 130. The bridge structure 130 may also include a second insulating layer 132 formed on the first insulating layer 131. The second insulating layer 132 may be SiO2, SiN x The second insulating layer 132 may be a layer of the same material as the first insulating layer 131.

[0048] In another optional embodiment, refer to Figure 3 The second insulating layer 132 can also be formed on the sidewalls of the light emitting diode 120 and the light emitting surface 1215. At this time, the second insulating layer 132 is preferably formed as an insulating material layer with anti-transmittance, thereby increasing the light emitting effect.

[0049] Alternatively, if Figure 3 and Figure 5 As shown, a sacrificial layer 122 may be formed on the side where the electrode structure 123 of the light-emitting diode 120 is located. The material of the sacrificial layer 122 is a material layer different from that of the first insulating layer 131, and the sacrificial layer 122 is easier to remove. For example, the sacrificial layer 122 may be a combination of one or more materials selected from oxide, nitride, TiW and Ti. Thus, after the light-emitting diode 120 is transferred to the supporting structure 110, the sacrificial layer 122 may be removed, and a hollow structure may be formed between the light-emitting diode 120 and the groove 113, thereby reducing the adhesion area between the light-emitting diode 120 and the bonding layer 112, so that only the bridging structure 130 is bonded to the bonding layer 112.

[0050] Reference Figure 2 and Figure 4 In the first direction, the bridge structure 130 has a thickness h1, wherein 2μm≤h1≤10μm, further, 3μm≤h1≤5μm, for example, h1 can be 2μm, 3μm, 4μm, 6μm, 8μm, etc. In the first direction, the depth of the gap 133 between the bridge structure 130 and the sidewall of the light-emitting diode 120 is e, wherein e and h1 satisfy: Furthermore, the depth e of the gap 133 can be, for example, h1, which is 0.5 μm, 1 μm, 1.5 μm, etc. Figure 6 and Figure 7, in the second direction, that is Figure 4 In the X direction shown in , the width of the gap 133 is w1, and optionally, 0<w1≤3μm, and further, 0<w1≤1μm. The width and depth of the gap 133 are designed so that when the light-emitting diode 120 is grasped, the bridge structure 130 can be broken at the gap 133 to ensure the fixing of the breaking position. At the same time, since the thickness of the bridge structure 130 at the gap 133 is relatively thin, after breaking, there will be no obvious uneven cross section like a stamp, but a basically flat cross section will be formed.

[0051] Refer again Figure 6 and Figure 7 , in the projection on the plane where the support structure 110 is located along the first direction, the projection profile of the bridging structure 130 is a trapezoidal structure, specifically, the side close to the projection boundary of the light-emitting diode 120 is the short side a of the trapezoidal structure, the side opposite and parallel to the short side a is the long side b of the trapezoidal structure, and the waist c of the trapezoidal structure is connected to the short side a and the long side b. Further, the above-mentioned trapezoidal structure is formed into an isosceles trapezoid, and the angle between the waist c and the short side a is β, and 110°≤β≤150°, and further, 120°≤β≤135°. The height of the trapezoidal structure (i.e., the vertical distance between the short side a and the long side b) is d, where a:b:c=2:1:(1~2). Further, the length of the short side a is 10%~50% of the length of the side wall of the light-emitting diode 120 where it is located, and further, it is 20%~30%, thereby ensuring that the length of the gap 133 is moderate and the above-mentioned fracture characteristics are ensured.

[0052] In an optional embodiment, if Figure 8 As shown, in the height direction of the bridge structure 130, the side wall of the bridge structure 130 where the waist C is located is formed as an inclined side wall, that is, along Figure 6 The longitudinal interface of the bridge structure 130 in the AA direction is also formed as a trapezoidal structure, preferably, the trapezoidal structure is also formed as an isosceles trapezoid. The design of the bridge structure 130 makes its surface area gradually decrease from bottom to top in the height direction, which is conducive to ensuring its fracture characteristics.

[0053] In another optional embodiment, if Fig. 9 As shown, in the height direction of the bridge structure 130, the side wall of the bridge structure 130 where the waist c is located is formed into a step structure 134. The step structure 134 has a height h2 in the first direction and a width w2 in the second direction (ie, the Y direction shown in the figure). 0<w2≤3μm; further preferably, the height h2 of the step structure 134 is equal to the depth e of the gap 133, and the width w2 of the step structure 134 is equal to the width w1 of the gap 133. The step structure 134 is formed while the gap 133 is formed, thereby simplifying the formation process.

[0054] Embodiment 2

[0055] This embodiment also provides a light-emitting element. The light-emitting element 100 of this embodiment includes a plurality of light-emitting diodes 120, a support structure 110, and a bridge structure 130. The support structure 110 is formed with a plurality of grooves 113. The light-emitting diodes 120 and the grooves 113 are accommodated in the grooves 113 in a one-to-one correspondence. The bridge structure 130 bridges between adjacent grooves 113 to connect the light-emitting diodes 120 and the support structure 110, and supports the light-emitting diodes 120 at the same time. The same points as the first embodiment are not repeated here. The difference is that:

[0056] In this embodiment, each light emitting diode 120 may have a plurality of pairs of bridge structures 130 on its sidewall, such as Fig.10 As shown, the light emitting diode 120 has two pairs of bridge structures 130 at a set of side walls opposite to each other, and the bridge structures 130 at the same side wall are distributed at intervals, preferably, evenly distributed at intervals, and the bridge structures 130 on the two opposite side walls are distributed symmetrically. This design can increase the supporting effect of the bridge structure 130 on the light emitting diode 120, while also ensuring the fracture characteristics of the bridge structure 130, and ensuring the good appearance of the light emitting diode 120 that is subsequently captured.

[0057] Embodiment 3

[0058] This embodiment also provides a light-emitting element. The light-emitting element 100 of this embodiment includes a plurality of light-emitting diodes 120, a support structure 110, and a bridge structure 130. The support structure 110 is formed with a plurality of grooves 113. The light-emitting diodes 120 and the grooves 113 are accommodated in the grooves 113 in a one-to-one correspondence. The bridge structure 130 bridges between adjacent grooves 113 to connect the light-emitting diodes 120 and the support structure 110, and supports the light-emitting diodes 120 at the same time. The same points as the first embodiment are not repeated here. The difference is that:

[0059] In this embodiment, Fig.11 As shown, a pair of bridge structures 130 located on two opposite side walls of the light emitting diode 120 are distributed asymmetrically.

[0060] Embodiment 4

[0061] This embodiment also provides a light-emitting element. The light-emitting element 100 of this embodiment includes a plurality of light-emitting diodes 120, a support structure 110, and a bridge structure 130. The support structure 110 is formed with a plurality of grooves 113. The light-emitting diodes 120 and the grooves 113 are accommodated in the grooves 113 in a one-to-one correspondence. The bridge structure 130 bridges between adjacent grooves 113 to connect the light-emitting diodes 120 and the support structure 110, and supports the light-emitting diodes 120 at the same time. The same points as the first embodiment are not repeated here. The difference is that:

[0062] In this embodiment, Fig.12 As shown, the bridge structure 130 is located at two relatively shorter opposite side walls of the light emitting diode 120 .

[0063] Embodiment 5

[0064] This embodiment provides a light emitting diode 120, which has a core particle transferred and separated from the light emitting element 100 of the first to fourth embodiments, and also includes a semiconductor epitaxial stack 121, a first electrode 1231, a second electrode 1232, a first insulating layer 131 and other structures. The specific structure of the light emitting diode 120 can refer to the first embodiment and the attached Figure 3 and attached Figure 5 Related records. Fig.13 As shown, there is a residual bridge structure 130 at the side wall of the light emitting diode 120 of this embodiment, and the width of the residual bridge structure 130 is less than 1 μm. At the same time, on the side opposite to the side wall of the core particle, the cross section of the residual bridge structure 130 is basically a flat cross section, and there is no irregular cross section similar to a stamp. Therefore, the residual amount of the bridge structure 130 is very small relative to the size of the core particle, and will not affect the appearance of the light emitting diode 120, and thus will not affect the transfer yield, and will not affect the reliability of subsequent devices.

[0065] Embodiment 6

[0066] This embodiment provides a display device such as Fig.14 As shown, the display device 200 includes a circuit substrate 202 and a plurality of luminous bodies 201 fixed on the circuit substrate 202. A driving circuit is provided in the circuit substrate 202. The luminous bodies 201 are electrically connected to the driving circuit so as to be controlled to light up or extinguish by the driving circuit. In this embodiment, the luminous bodies 201 are light-emitting diodes transferred in batches from any one or more light-emitting elements provided in Embodiments 1 to 4, i.e., the light-emitting diodes provided in Embodiment 5.

[0067] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A light emitting element, characterized in that: include: A plurality of light-emitting diodes, each of which comprises at least a semiconductor epitaxial stack, wherein the semiconductor epitaxial stack comprises a first semiconductor layer, an active layer and a second semiconductor layer sequentially stacked along a first direction; A supporting structure, located below the light emitting diode, supporting the light emitting diode; The bridging structure is located on a part of the side wall of the light emitting diode, connecting the light emitting diode and the supporting structure, and there is a gap between the bridging structure and the light emitting diode. In the first direction, the gap does not completely penetrate the bridging structure.

2. The light emitting element according to claim 1, characterized in that The width of the gap is 0<w1≤3 μm.

3. The light emitting element according to claim 1, wherein: The thickness of the bridge structure is 2 μm≤h1≤10 μm.

4. The light emitting element according to claim 3, characterized in that The depth e and h1 of the gap satisfy:

5. The light emitting element according to claim 1, wherein: In the projection on the plane where the supporting structure is located along the first direction, the projection outline of the bridging structure is a trapezoidal structure, wherein the projection boundary close to the light-emitting diode is the short side a of the trapezoidal structure, the long side b of the trapezoidal structure is opposite and parallel to the short side a, the waist c of the trapezoidal structure is connected to the short side a and the long side b, and the height of the trapezoidal structure is d, wherein a:b:c=2:1: (1～2)。 6. The light emitting element according to claim 5, characterized in that In the projection, the angle between the short side a and the waist c is between 120° and 150°.

7. The light emitting element according to claim 5, characterized in that The side wall of the bridge structure where the waist c of the trapezoidal structure is located is formed as an inclined side wall.

8. The light emitting element according to claim 5, characterized in that The side wall of the bridge structure where the waist c of the trapezoidal structure is located is formed with a step structure. In the first direction, the height h2 of the step structure and the thickness h1 of the bridge structure satisfy:

9. The light emitting element according to claim 8, characterized in that The width of the step structure is 0<w2≤3μm.

10. The light emitting element according to claim 1, wherein: The bridge structures are formed in pairs at two opposite side walls of the light emitting diode, and at least one pair of the bridge structures is provided at two opposite side walls of the light emitting diode.

11. The light emitting element according to claim 10, characterized in that The bridge structures are symmetrically distributed on the side walls of the light emitting diode; or asymmetrically distributed on the side walls of the light emitting diode.

12. The light emitting element according to claim 6, characterized in that The bridge structure includes a first insulating layer and a second insulating layer located above the first insulating layer, wherein the first insulating layer extends to cover a surface of the light emitting diode facing the supporting structure.

13. The light emitting element according to claim 1, wherein: The supporting structure comprises a substrate and a bonding layer located above the substrate, and the bridging structure is straddled on the bonding layer.

14. The semiconductor light emitting element according to claim 13, characterized in that: The support structure has a groove, the light emitting diode is accommodated in the groove, and a sacrificial layer is formed between the groove and the light emitting diode.

15. The light emitting element according to claim 1, characterized in that The material of the bridge structure is SiO2, SiN x 、SiO x N y , a combination of one or more of Ti2O3 and Al2O3.

16. The light emitting element according to claim 1, characterized in that The side length or height of the light emitting diode is between 2 μm and 100 μm.

17. A light emitting diode, characterized in that: The light-emitting diode is a core particle obtained by transfer separation from the light-emitting element according to any one of claims 1 to 16, and the bridge structure remains on the side wall of the core particle.

18. The light emitting diode according to claim 17, characterized in that: The width of the bridge structure remaining at the sidewall of the core particle is less than 1 μm.

19. The light emitting diode according to claim 17, characterized in that: On the side opposite to the side wall of the core particle, the remaining bridge structure has a flush side wall.

20. A display device, characterized in that: It comprises a circuit substrate and a plurality of light-emitting bodies fixed on the circuit substrate, wherein the light-emitting bodies comprise light-emitting diodes transferred in batches from the light-emitting elements according to any one of claims 1 to 16.

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