Inspection apparatus and inspection method using the same

Abstract

An embodiment discloses an inspection apparatus and an inspection method, the inspection apparatus including: a stage on which a plurality of micro light emitting elements are disposed; an electron beam irradiation unit that irradiates the plurality of micro light-emitting elements with an electron beam; a light detection unit that measures light emitted from the plurality of micro-light-emitting elements; and an electron beam induction unit disposed between the electron beam irradiation unit and the plurality of micro-light-emitting elements.

Description

Technical Field

[0001] The embodiment relates to an inspection device and an inspection method capable of inspecting whether a micro-light-emitting element is defective in a non-contact manner. Background Art

[0002] Representative displays that have been commercialized include liquid crystal displays (LCD) and organic light emitting diodes (OLED). Recently, the development of OLED displays has been active, but OLED displays have problems such as short service life and poor mass production yield.

[0003] A light emitting diode (LED) is a type of light emitting element that emits light when an electric current is applied. LEDs can emit light efficiently at low voltage, thus significantly reducing energy consumption. Recently, the brightness of LEDs has been greatly improved, and they are now used in various devices such as backlight units of liquid crystal display devices, electro-optical panels, monitors, and household appliances.

[0004] Light-emitting diodes containing compounds such as GaN and AlGaN have many advantages, such as wide and easily adjustable bandgap energy, and can therefore be used in a variety of light-emitting elements, light-receiving elements, and various diodes. In particular, they have the advantages of low power consumption, semi-permanent service life, high response speed, safety, and environmental protection.

[0005] Recently, research is being conducted on the technology of using micro light-emitting elements obtained by miniaturizing light-emitting diodes as pixels of displays. Since a large number of such micro light-emitting elements are produced on one wafer, it is important to accurately inspect whether the light-emitting elements are defective.

[0006] However, a device for inspecting by causing a plurality of micro-light-emitting elements to emit light in a non-contact manner has not yet been commercialized. Summary of the invention

[0007] Problems to be solved by the invention

[0008] The embodiment provides an inspection device for inspecting a micro-light emitting element by causing the micro-light emitting element to emit light in a non-contact manner.

[0009] The problems to be solved in the embodiments are not limited thereto, and may also include purposes or effects that can be grasped from the measures or embodiments adopted to solve the problems described below.

[0010] Measures taken to solve the problem

[0011] According to one feature of the present invention, the inspection device includes: a stage, on which a plurality of micro-luminescent elements are arranged; an electron beam irradiation unit, which irradiates an electron beam to the plurality of micro-luminescent elements; a light detection unit, which acquires an image of light emitted from the plurality of micro-luminescent elements; an electron beam inducing unit, which is arranged between the electron beam irradiation unit and the plurality of micro-luminescent elements; and a control unit, which determines whether the plurality of micro-luminescent elements are defective based on the image of light acquired by the light detection unit.

[0012] The electron beam inducing portion may include a plurality of through holes through which the electron beams pass.

[0013] The ratio of the first distance to the second distance (first distance: second distance) can be 1:0.6 to 1:0.99, wherein the first distance is the distance between the electron beam irradiation portion and the micro-luminescent element, and the second distance is the distance between the electron beam irradiation portion and the electron beam inducing portion.

[0014] The electron beam inducing portion may include: a first electron beam inducing portion disposed between the electron beam irradiating portion and the plurality of micro light emitting elements; and a second electron beam inducing portion disposed between the first electron beam inducing portion and the plurality of micro light emitting elements.

[0015] The electron beam irradiation unit may include an electrode layer, a plurality of emitters formed on the electrode layer and emitting electrons to the plurality of micro light-emitting elements, and a gate electrode disposed apart from the electrode layer, wherein the emitters include carbon nanotubes.

[0016] A voltage level applied to the electron beam inducing portion may be higher than a voltage level applied to the gate electrode.

[0017] The above-mentioned multiple micro-luminescent elements include a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer (Active Layer) arranged between the above-mentioned first conductive semiconductor layer and the above-mentioned second conductive semiconductor layer. If irradiated by an electron beam, the above-mentioned first conductive semiconductor layer, the active layer and the second conductive semiconductor layer can each emit light.

[0018] A filter for shielding a part of the light incident on the light detection unit is included, and the filter can transmit the first light emitted from the active layer and block the second light emitted from the first conductive type semiconductor layer or the second conductive type semiconductor layer.

[0019] A filter array is included for shielding a portion of the light incident on the above-mentioned light detection part, and the above-mentioned filter array includes: a first filter, which selectively allows light of a first band among all bands of first light emitted from the active layer of the above-mentioned multiple micro-luminescent elements to pass; and a second filter, which selectively allows light of a second band different from the above-mentioned first band among all bands of the above-mentioned first light to pass, and the above-mentioned first light can be any one of blue light, green light and red light.

[0020] The optical filter array may include a driving unit for selectively placing the first optical filter and the second optical filter on the light detecting unit.

[0021] A vibration unit for applying vibration to the electron beam irradiation portion may be included.

[0022] The present invention comprises a moving part for moving the stage or the electron beam inducing part, wherein the stage or the electron beam inducing part moves so that the micro-luminescent element overlapping with the electron beam inducing part can be exposed to the through hole of the electron beam inducing part.

[0023] The method may include: a chamber in which the stage, the electron beam irradiation unit, and the electron beam induction unit are arranged; and a vacuum pump that forms a vacuum in the chamber.

[0024] The invention comprises: a shell which accommodates the electron beam irradiation part and the electron beam induction part; and a moving module which moves the shell so that the electron beam emitted from the shell can irradiate only a part of the plurality of micro light-emitting elements.

[0025] The housing may be arranged to be inclined with respect to an imaginary line perpendicular to the stage.

[0026] According to a feature of the present invention, the inspection method includes: a step of forming a vacuum inside a chamber; a step of irradiating an electron beam to a plurality of micro-luminescent elements arranged inside the above-mentioned chamber; a step of measuring the luminous intensity of the above-mentioned plurality of micro-luminescent elements; and a step of judging whether the above-mentioned plurality of micro-luminescent elements are defective, the above-mentioned electron beam is accelerated by an electron beam inducing portion arranged between the electron beam irradiation portion and the above-mentioned plurality of micro-luminescent elements and injected into the above-mentioned plurality of micro-luminescent elements.

[0027] Effects of the Invention

[0028] According to the embodiment, there is provided an inspection device for inspecting micro light emitting elements by emitting light in a non-contact manner, thereby increasing the inspection speed of a plurality of micro light emitting elements and preventing the light emitting elements from being damaged.

[0029] The various and beneficial advantages and effects of the present invention are not limited to the above contents, which will be more easily understood in the process of describing the specific embodiments of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 is a conceptual diagram of an inspection device according to a first embodiment of the present invention.

[0031] Figure 2 This is a diagram showing a state in which a light emitting element emits light due to being irradiated with an electron beam.

[0032] Figure 3 This is a diagram showing the principle of how a light-emitting element emits light using an electron beam.

[0033] Figure 4 1 is a diagram showing a state in which light emitted from a light emitting element is selectively incident through an optical filter.

[0034] Figure 5a It is a diagram showing the grid shape of the electron beam inducing portion.

[0035] Figure 5b It is a diagram showing the cross-sectional shape of the electron beam inducing portion.

[0036] Figure 5c yes Figure 5a A first variation of .

[0037] Figure 5d yes Figure 5a A second variation of .

[0038] Figure 6a It is a diagram showing an electron beam irradiation section.

[0039] Figure 6b yes Figure 6a A variation of .

[0040] Figure 7 It is a graph showing the measured emission intensities of a plurality of micro-luminescent elements.

[0041] Figure 8 These are photographs of multiple micro-luminescent elements that were measured.

[0042] Fig. 9 is a conceptual diagram of an inspection device according to a second embodiment of the present invention.

[0043] Fig.10 is a conceptual diagram of an inspection device according to a third embodiment of the present invention.

[0044] Fig.11 is a diagram showing a filter array.

[0045] Fig.12 : is a figure which shows the state which rotates the filter array.

[0046] Fig.13is a diagram showing a process of screening wavelengths with the aid of an optical filter.

[0047] Fig.14 is a conceptual diagram of an inspection device according to a fourth embodiment of the present invention.

[0048] Fig.15 This is a diagram showing a plurality of light emitting elements that are partially connected.

[0049] Fig.16 yes Fig.15 A variation of .

[0050] Fig.17 is a conceptual diagram of an inspection device according to a fifth embodiment of the present invention.

[0051] Fig.18a and Fig.18b It is a diagram showing a process of scanning a linear inspection area.

[0052] Fig.19 is a conceptual diagram of an inspection device according to a sixth embodiment of the present invention.

[0053] Fig. 20 is a conceptual diagram of an inspection device according to a seventh embodiment of the present invention.

[0054] Fig.21 It is a top view of the electron beam inducing section.

[0055] Fig. 22 It is a diagram showing a state where the electron beam inducing portion moves.

[0056] Fig.23 is a flow chart showing an inspection method according to one embodiment of the present invention.

[0057] Fig.24a This is a diagram showing a state in which the electron beam measuring unit measures the uniformity of the electron beam.

[0058] Figure 24b This is a diagram showing a state where the first electrode layer and the electron beam measurement unit are divided into a plurality of regions. DETAILED DESCRIPTION

[0059] The present invention is capable of various modifications and various embodiments, and thus specific embodiments are illustrated and described in the accompanying drawings. However, this is not intended to limit the present invention to specific embodiments, but should be understood to include all modifications, equivalents or substitutes that fall within the concept and technical scope of the present invention.

[0060] Terms including ordinal numbers such as second and first can be used to describe a variety of components, but the above components are not limited by the above terms. The above terms are only used to distinguish one component from other components. For example, without departing from the scope of the present invention, the second component can be named as the first component, and similarly, the first component can also be named as the second component. The so-called "and / or" term includes a combination of multiple related and recorded items or a certain item among multiple related and recorded items.

[0061] When it is mentioned that a certain component is "connected" or "connected" to another component, although it is possible that the component is directly connected or connected to the other component, it should be understood that there may be other components between the two. On the contrary, when it is mentioned that a certain component is "directly connected" or "directly connected" to another component, it should be understood that there are no other components between the two.

[0062] The terms used in this application are only used to illustrate specific embodiments and are not intended to limit the present invention. Singular expressions include plural expressions unless they have a significantly different meaning in the context. In this application, the terms "including" or "having" are intended to specify the existence of features, numbers, steps, actions, constituent elements, parts or combinations thereof recorded in the specification, and should be understood as not excluding in advance the existence or additional possibility of one or more other features or numbers, steps, actions, constituent elements, parts or combinations thereof.

[0063] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as those commonly understood by those of ordinary skill in the art. Terms such as terms defined in commonly used dictionaries should be interpreted as having the same meaning as that in the context of the relevant art and should not be interpreted as having an ideal or excessive formal meaning unless explicitly defined in this application.

[0064] Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings. The same or corresponding components are denoted by the same reference numerals regardless of the figure numbers, and repeated description thereof will be omitted.

[0065] Figure 1 is a conceptual diagram of an inspection device according to a first embodiment of the present invention.

[0066] Reference Figure 1According to the embodiment, the inspection device includes: a stage 530, on which a plurality of micro-luminescent elements 100 are arranged; an electron beam irradiation section 200, which irradiates an electron beam to the plurality of micro-luminescent elements 100; an electron beam inducing section 300, which is arranged between the electron beam irradiation section 200 and the plurality of micro-luminescent elements 100; and a chamber 500, which forms a vacuum inside.

[0067] The chamber 500 accommodates the stage 530 , the electron beam irradiation unit 200 , and the electron beam inducing unit 300 , and forms a vacuum inside thereof, thereby preventing the electron beam from being scattered.

[0068] Chamber 500 is capable of holding 10 -5 The vacuum is less than 10000 Torr and the continuous use time can be more than 10,000 hours, but it is not necessarily limited thereto and can be adjusted to meet various conditions for irradiating the micro-light emitting element 100 with electron beams. The chamber 500 is provided with a vacuum pump 520 so that the vacuum pressure in the chamber 500 can be adjusted.

[0069] The chamber 500 may further include a sub-chamber (not shown) for accommodating a plurality of wafers and a transport component (not shown) for placing the wafers on the stage 530 .

[0070] A substrate 10 may be fixed on the stage 530, and a plurality of micro-light-emitting elements 100 may be arranged on the substrate 10. The substrate 10 may be a sapphire (Al2O3) wafer as a growth substrate, but is not necessarily limited thereto, and may also be a variety of substrates for arranging the micro-light-emitting elements 100. For example, the substrate 10 may be a transfer substrate for receiving the transfer of the micro-light-emitting elements 100, or may be a display panel after the transfer is completed.

[0071] The micro-light emitting element 100 may be a light emitting diode or an organic light emitting diode having a size of 1 μm to 200 μm. For example, the size of the micro-light emitting element 100 may be 10 μm to 60 μm, but is not necessarily limited thereto, and may be applicable to light emitting elements of various sizes. For example, the micro-light emitting element 100 may be a micro-light emitting element having a size of 200 μm to 500 μm, or may be an RGB light emitting element having a size of 1000 μm or more.

[0072] The micro-luminescent element 100 may be any one of a blue luminescent element, a green luminescent element, and a red luminescent element. Since the micro-luminescent element 100 performs the pixel function of the display, it may be designed to have any wavelength band of RGB. However, it is not necessarily limited thereto, and the micro-luminescent element 100 may also be a white luminescent element.

[0073] The micro-luminescent element 100 may be a state where the light-emitting structure is separated into multiple parts on the growth substrate, but is not necessarily limited to this, and may also be a state where some semiconductor layers are connected to each other. That is, the micro-luminescent element 100 may be defined as a semiconductor structure in which each active layer is separated and can emit light independently.

[0074] The micro-luminescent element 100 can be grown on a substrate using methods such as metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), and sputtering.

[0075] The electron beam irradiation unit 200 may include a first electrode layer 210 and a plurality of emitters 220 formed on the first electrode layer 210 and emitting electrons toward the plurality of micro-light-emitting elements 100. The emitted electrons may move toward the plurality of micro-light-emitting elements. Here, an electron is a particle with a negative charge, and an electron beam (electron ray) may be defined as a continuous flow of electrons having kinetic energy and directionality.

[0076] The first electrode layer 210 may contain Al, Ag, Cu, Ti, Pt, Ni, Ir or Rh, but is not necessarily limited thereto. For example, the first electrode layer 210 may also be made into a transparent electrode such as ITO.

[0077] The emitter 220 may include carbon nanotubes (CNTs), but is not necessarily limited thereto, and may be applicable to various materials and structures capable of emitting electrons.

[0078] At least a portion of the plurality of carbon nanotubes constituting the emitter 220 may extend in a vertical direction from the first electrode layer 210 toward the stage 530. However, the present invention is not limited thereto, and the plurality of carbon nanotubes may extend in a horizontal direction.

[0079] The plurality of emitters 220 may be uniformly arranged on the first electrode layer 210. Therefore, the electrons emitted from the plurality of emitters 220 can be uniformly irradiated to the plurality of micro light emitting elements 100.

[0080] The gate electrode 230 may be disposed to be separated from the plurality of emitters 220 by means of the insulating layer 240. The gate electrode 230 may be disposed higher than the emitters 220, but is not necessarily limited thereto, and may be disposed at various positions capable of forming an electric field with the first electrode layer 210.

[0081] The first power supply part 410 may apply a voltage to the first electrode layer 210 and the gate electrode 230. A negative voltage may be applied to the first electrode layer 210, and a positive voltage may be applied to the gate electrode 230.

[0082] The first power supply unit 410 can drive a high voltage of 1000V to 3000V with a pulse of 1KHz or less. If a high voltage pulse is applied, an electric field can be formed between the first electrode layer 210 and the gate electrode 230. Therefore, the electrons emitted from the emitter 220 can move toward the micro-light-emitting element 100. The following describes a case where electrons are accelerated toward the micro-light-emitting element 100 to form an electron beam.

[0083] The electron beam inducing portion 300 may be disposed between the electron beam irradiation portion 200 and the plurality of micro light emitting elements 100. The electron beam inducing portion 300 may be a second gate electrode disposed apart from the first electrode layer 210 of the electron beam irradiation portion 200 to form an electric field.

[0084] The second power supply unit 420 can apply a positive voltage of 8000V to 12000V to the electron beam inducing unit 300 to accelerate the electron beam. The electron beam accelerated by the electron beam inducing unit 300 is irradiated to the plurality of micro light emitting elements 100, so that the plurality of micro light emitting elements 100 can emit light.

[0085] The electron beam inducing portion 300 may be disposed closer to the micro light emitting element 100 than the electron beam irradiating portion 200 .

[0086] The ratio of the first distance d1 to the second distance d2 (first distance: second distance) may be 1:0.6 to 1:0.99, wherein the first distance d1 is the distance between the electron beam irradiation section 200 and the micro-luminescent element 100, and the second distance d2 is the distance between the electron beam irradiation section 200 and the electron beam inducing section 300. When the distance ratio is less than 1:0.6 (e.g., 1:0.4), the distance between the electron beam inducing section 300 and the micro-luminescent element 100 becomes farther, so that the electron beam may not be incident on the micro-luminescent element 100 with sufficient energy. In addition, when the distance ratio is greater than 1:0.99, the electron beam inducing section 300 is too close to the micro-luminescent element 100, and thus the uniformity of the electron beam is reduced.

[0087] The electron beam inducing portion 300 may be formed with a plurality of through holes 310 to allow the electron beam to pass through. For example, the electron beam inducing portion 300 may have a mesh shape. However, the present invention is not necessarily limited thereto, and the electron beam inducing portion 300 may have a variety of structures that allow the electron beam to pass through while forming an electric field that accelerates the electron beam. For example, the electron beam inducing portion 300 may also be composed of an electrode through which the electron beam can pass.

[0088] The electron beam inducing unit 300 or the stage 530 can be relatively moved to improve uniformity. Figure 5a The electron beam inducing section 300 is moved left and right by the electron beam inducing section 300, so that the micro-luminescent element 100 that overlaps with the electron beam inducing section 300 and is blocked can be exposed to the through hole 310 of the electron beam inducing section 300 to be irradiated with the electron beam. However, the present invention is not necessarily limited to this, and the stage 530 can also be moved left and right.

[0089] Such an electron beam inducing unit 300 may have various advantages. According to an embodiment, since the electron beam inducing unit 300 is disposed between the electron beam irradiating unit 200 and the micro-light emitting element 100, it is not necessary to apply a voltage to the micro-light emitting element 100. In the case of a structure in which the micro-light emitting element 100 must be connected to a power source, since a plurality of micro-light emitting elements 100 must be connected to a power source respectively, the circuit becomes very complicated.

[0090] In addition, in the structure where electrodes are arranged on the back side of the substrate 10 or the stage 530, since a strong electric field cannot be formed, the electron beam may not be sufficiently accelerated. Therefore, the electron beam cannot be sufficiently injected into the light-emitting element, and thus the light-emitting element may not have sufficient light intensity even if the element is normal.

[0091] The light detection unit 600 can obtain images of light emitted by the plurality of micro-luminescent elements 100. The light detection unit 600 can be a camera having a CCD, but is not necessarily limited thereto, and can be applied to various imaging devices capable of obtaining images of light emitted by the micro-luminescent elements 100 without limitation.

[0092] The light detection unit 600 may be disposed on the window 510 of the chamber 500 to measure the light emission intensity of the plurality of micro-light emitting elements 100. Light emitted from the plurality of micro-light emitting elements 100 may pass through the substrate 10 and enter the light detection unit 600.

[0093] However, the position of the light detection unit 600 is not limited thereto and can be variously changed. For example, the light detection unit 600 and the window 510 can also be arranged on the side of the chamber 500 or at the bottom of the electron beam irradiation unit 200. That is, the light detection unit 600 can be arranged at various positions capable of measuring the light emission intensity of the micro-luminescent element 100.

[0094] The light detection unit 600 may convert the collected luminous intensity (spectrum) or wavelength signal into an electrical signal and transmit the electrical signal to the control unit 700. The control unit 700 may include a main processor for controlling the entire inspection device.

[0095] The control unit 700 controls the operation of the electron beam irradiation unit 200 , the first power unit 410 , and the second power unit 420 , processes the measurement signal of the light detection unit 600 , outputs map data including the evaluation result of the micro-luminescent element 100 , and can detect defective elements.

[0096] The control unit 700 can be implemented by a memory (not shown) storing an algorithm for controlling the operation of the components in the inspection device or data for a program that reproduces the algorithm, and a processor (not shown) that uses the data stored in the memory to execute the aforementioned operation. In this case, the memory and the processor can each be implemented by a separate chip, but it is not necessarily limited to this, and the memory and the processor can also be implemented by a single chip.

[0097] The control unit 700 can be connected to a storage unit (not shown) for storing processed data. This storage unit can be implemented by at least one of a non-volatile storage element such as a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), and a flash memory, or a volatile storage element such as a random access memory (RAM), or a storage medium such as a hard disk drive (HDD) or a read-only compact disk memory (CD-ROM), but is not necessarily limited to these.

[0098] Figure 2 is a diagram showing a state in which a light emitting element emits light due to being irradiated with an electron beam, Figure 3 is a diagram showing the principle of light emitting elements using electron beams, Figure 4 1 is a diagram showing a state in which light emitted from a light emitting element is selectively incident through an optical filter.

[0099] Reference Figure 2 and Figure 3, each micro-luminescent element 100 may include a first conductive semiconductor layer 110, an active layer 120, and a second conductive semiconductor layer 130. The first conductive semiconductor layer 110 may be implemented using compound semiconductors of group III-V, group II-VI, etc., and the first conductive semiconductor layer 110 may be doped with a first dopant.

[0100] The first conductive semiconductor layer 110 may be made of Al x In y Ga 1-x-y The first conductive semiconductor layer 110 may be formed by a semiconductor material having a composition formula of N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), any one or more of InAlGaN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP, but is not limited thereto. When the first dopant is an n-type dopant such as Si, Ge, Sn, Se, or Te, the first conductive semiconductor layer 110 may be an n-type nitride semiconductor layer.

[0101] The active layer 120 may be disposed on the first conductive type semiconductor layer 110. In addition, the active layer 120 may be disposed between the first conductive type semiconductor layer 110 and the second conductive type semiconductor layer 130.

[0102] The active layer 120 is a layer where electrons (or holes) injected through the first conductive semiconductor layer 110 and holes (or electrons) injected through the second conductive semiconductor layer 130 merge. The active layer 120 transitions to a lower energy level as electrons and holes recombine and may generate light having a wavelength corresponding thereto.

[0103] The active layer 120 may have any structure of a single well structure, a multi-well structure, a single quantum well structure, a multi-quantum well (MQW) structure, a quantum dot structure or a quantum wire structure, but the structure of the active layer 120 is not limited thereto. The active layer 120 may generate light in the visible light band.

[0104] The second conductive semiconductor layer 130 may be disposed on the active layer 120. The second conductive semiconductor layer 130 may be implemented using compound semiconductors of Group III-V, Group II-VI, etc., and the second conductive semiconductor layer 130 may be doped with a second dopant.

[0105] The second conductive semiconductor layer 130 may be made of a material selected from the group consisting of In x5 Al y2 Ga 1-x5-y2N (0≤x5≤1, 0≤y2≤1, 0≤x5+y2≤1) or a material selected from AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductive semiconductor layer 130 doped with the second dopant may be a p-type semiconductor layer.

[0106] Reference Figure 2 and Figure 3 , the electron beam passing through the through hole 310 of the electron beam inducing portion 300 can irradiate each semiconductor layer of the micro-light-emitting element 100. When the electron beam irradiates the micro-light-emitting element 100, the electron beam collides in the semiconductor layer, thereby generating electron-hole pairs. The generated electron-hole pairs can emit visible light by recombination.

[0107] The intensity of visible light emitted from the micro-luminescent element 100 may be proportional to the intensity (or density) of the electron beam. Therefore, the intensity (or density) of the electron beam may be adjusted to detect the light emitted from the micro-luminescent element 100 and determine whether it is defective.

[0108] The micro-luminescent element 100 can be any one of a blue luminescent element, a green luminescent element and a red luminescent element. Therefore, the micro-luminescent element 100 can emit light in the blue, green or red wavelength band.

[0109] The electron beam injected into the micro light emitting element 100 may be injected not only into the active layer 120 but also into the first conductive type semiconductor layer 110 and the second conductive type semiconductor layer 130. Therefore, the first conductive type semiconductor layer 110 and the second conductive type semiconductor layer 130 may also emit light.

[0110] Illustratively, when the micro-luminescent element 100 is a blue light emitting element, the first light L1 in the blue wavelength band emitted from the active layer 120 and the second light L2 and L3 in the yellow wavelength band emitted from the first and second conductive semiconductor layers 110 and 130 are mixed and emitted to the outside.

[0111] Reference Figure 4 , the filter 800 disposed in front of the light detection unit 600 can transmit only the first light L1 and block the second light L2 and L3. Therefore, only the intensity of the first light L1 can be measured, and it is possible to accurately determine whether the micro-luminescent element 100 is defective.

[0112] The optical filter 800 may be a plurality of bandpass filters that pass only the wavelength band of the first light L1. For example, the optical filter 800 may alternately stack a plurality of high refractive index layers 801 and a plurality of low refractive index layers 802 to pass only light of a specific wavelength band, but the structure of the optical filter 800 is not necessarily limited thereto.

[0113] The optical filter 800 can be selectively applied according to the inspection method. In the case of an inspection method without an optical filter, when the inspection object is a blue micro-element and the intensity of the blue light and the yellow light in the detection wavelength is within a predetermined range, it can be judged as a normal element, and when the intensity of the blue light and the yellow light deviates from a predetermined ratio, it can also be judged as a defective element. For example, if the intensity of the blue light is significantly small, it can be judged that the micro-luminescent element is defective. In the case of judging as defective in this way, the optical filter can also be omitted.

[0114] Since the embodiment uses a cathode luminescence (CL) method in which the micro-luminescent element 100 is irradiated with an electron beam to emit light, the light can be emitted without damaging the light-emitting element, and a plurality of micro-luminescent elements are irradiated with an electron beam to emit light simultaneously, thereby speeding up inspection.

[0115] A scanning electron microscope (SEM) is a microscope widely used to observe small-scale microstructures and shapes in the solid state. Due to its deep focal depth and ease of observing three-dimensional images, it is an analytical device that can observe three-dimensional shapes such as complex surface structures or crystal shapes at high magnification.

[0116] The scanning electron microscope is composed of an electron gun that generates and accelerates an electron beam, a convex lens and an objective lens that focus the electron beam, and a deflection coil that adjusts the path of the electron beam until the electron beam leaves the filament and reaches the specimen. However, the scanning electron microscope is different from the present embodiment that irradiates a large area with an electron beam in that the electron beam is irradiated to a local area to measure the chemical composition.

[0117] Field emission display (FED) is a display that arranges field emission emitters 220 as cold cathode electron beam sources in a matrix form and irradiates electron beams to phosphors to make cathodes emit light. However, the difference is that FED is not a structure that makes light-emitting diodes emit light.

[0118] In addition, the photoluminescence (PL) method is a method in which light is injected into a sample and its energy is used to generate light through excitation and recombination. In contrast, the cathode luminescence (CL) method of the embodiment is a method in which a field-emitted electron beam is accelerated by an electric field to obtain energy and then injected into a light-emitting diode to generate light.

[0119] Figure 5a is a diagram showing the grid shape of the electron beam inducing section, Figure 5b is a diagram showing the cross-sectional shape of the electron beam inducing portion, Figure 5c yes Figure 5a A first variant example, Figure 5d yes Figure 5a The second variant example, Figure 6a is a diagram showing an electron beam irradiation section, Figure 6b yes Figure 6a A variation of .

[0120] Reference Figure 5a , the electron beam inducing portion 300 may have a grid shape in which a plurality of through holes 310 are formed on a frame 311. Although the through holes 310 are illustrated as having a quadrangular shape, the through holes 310 may also have various polygonal shapes or a circular shape.

[0121] In the electron beam inducing portion 300, the area of ​​the plurality of through holes 310 may be 80% to 95% of the total area. Preferably, the area of ​​the through holes 310 is increased so that the electron beams are uniformly irradiated to the micro light emitting element 100. However, in the case where the area of ​​the through holes 310 is greater than 95%, the area of ​​the electron beam inducing portion 300 becomes smaller, and thus the effect of accelerating the electron beams may be reduced.

[0122] Reference Figure 5b The electron beam inducing portion 300 may have a first surface 300a opposite to the electron beam irradiating portion 200 and a second surface 300b opposite to the plurality of micro light emitting elements, and the second surface 300b may have a curvature. Therefore, the area of ​​the second surface 300b may be greater than that of the first surface 300a.

[0123] According to this configuration, the electron beams that have passed through the electron beam inducing portion 300 are bent due to the attraction with the second surface 300 b , and thus can be irradiated to the plurality of micro light-emitting elements 100 more uniformly.

[0124] Reference Figure 5c, the electron beam inducing portion 300 may include a plurality of through holes 310 formed to be long in one direction. That is, the electron beam inducing portion 300 may have a variety of shapes in addition to a grid shape. The area of ​​the electron beam inducing portion 300 may have an area corresponding to the plurality of light emitting elements 100, but is not necessarily limited thereto. For example, Figure 5d As shown, the electron beam inducing portion 300 may further include at least one through hole 310 formed to be long and elongated in one direction. That is, the area of ​​one through hole 310 may be larger than the area of ​​one or more light emitting elements.

[0125] According to an embodiment, it is important that the electron beam is uniformly irradiated to the plurality of micro light emitting elements 100. Therefore, the emitter 220 may select a variety of configurations for emitting a uniform electron beam.

[0126] Reference Figure 6a , the first electrode layer 210 is disposed on the support substrate 10, and the emitter 220 may be formed of a plurality of carbon nanotubes. Although the plurality of carbon nanotubes may be grown directly on the first electrode layer 210, the plurality of carbon nanotubes may also be grown on an additional substrate and then transferred to the first electrode layer 210. In the case where the additional substrate is a conductive substrate, the conductive substrate itself may also be laminated on the first electrode layer 210.

[0127] The plurality of carbon nanotubes may be partitioned by the insulating layer 240. The gate electrode 230 may be disposed on the upper portion of the insulating layer 240, but the position of the gate electrode 230 is not particularly limited.

[0128] Reference Figure 6b , the emitter 220 is formed to have a sharp tip, so that it can also have a structure that is easy to emit electrons. In addition, the structure of the electron beam irradiation unit 200 can also be applied to all known emitter structures for emitting electrons.

[0129] Figure 7 is a graph showing the measured luminous intensity of a plurality of micro-luminescent elements, Figure 8 These are photographs of multiple micro-luminescent elements that were measured.

[0130] Reference Figure 7 and Figure 8 , the control unit can collect the luminous intensity (light image) of the plurality of micro-luminescent elements 100 collected by the light detection unit to generate image data. The control unit can determine that a defective element 101 having a luminous intensity weaker than a predetermined intensity or not emitting light is defective.

[0131] When the transfer process is performed, only the normal elements 102 other than the defective elements 101 can be selectively transferred. In addition, in the case where an inspection is performed after the transfer is completed, defective elements judged to be defective can be selectively removed or repaired.

[0132] Fig. 9 is a conceptual diagram of an inspection device according to a second embodiment of the present invention, Fig.10 is a conceptual diagram of an inspection device according to a third embodiment of the present invention, Fig.11 is a diagram showing a filter array, Fig.12 is a diagram showing a state where the filter array is rotated, Fig.13 is a diagram showing a process of screening wavelengths with the aid of an optical filter.

[0133] Reference Fig. 9 , the inspection device according to the embodiment is provided with a plurality of electron beam inducing sections 300 in the vertical direction, so that the electron beam can be effectively accelerated. At this time, the voltage level applied to the first electron beam inducing section 301 arranged at the lower part and the voltage level applied to the second electron beam inducing section 302 arranged at the upper part can be different. Exemplarily, the voltage level applied to the second electron beam inducing section 302 arranged at the upper part can be higher.

[0134] In addition, the electron beam irradiation unit 200 is provided with a vibration unit 250, so that vibration can be applied to the electron beam irradiation unit 200. Therefore, the direction of the emitted electron beam can be adjusted to further improve the uniformity of the electron beam. Alternatively, vibration can also be applied to the first electron beam inducing unit 301 and the second electron beam inducing unit 302.

[0135] The electron beam inducing section 300 or the stage 530 can also be relatively moved to improve uniformity. The moving component (not shown) moves the electron beam inducing section 300 or the stage 530 left and right, so that the micro-luminescent element 100 that overlaps with the electron beam inducing section 300 and is blocked can be exposed to the through hole of the electron beam inducing section 300 to be irradiated by the electron beam.

[0136] The gate electrode may be omitted from the electron beam irradiation unit 200. In this case, an electric field is formed between the first electrode layer 210 and the electron beam inducing unit 300, so that electrons can be emitted.

[0137] Reference Fig.10 , the inspection device according to the embodiment can filter only the light of the desired wavelength band among the light emitted from the micro-luminescent element 100. For example, in the blue micro-luminescent element 100, when the desired peak wavelength is 423 nm, the blue light of other wavelength bands can be blocked by the first to third filters 810, 820, 830. Therefore, the micro-luminescent element 100 having the desired wavelength band can be screened.

[0138] Reference Fig.11 and Fig.12, the filter array PA1 may include: a first filter 810, which selectively transmits light of a first wavelength band among all wavelength bands of the first light emitted from the active layer of the plurality of micro-luminescent elements 100; a second filter 820, which selectively transmits light of a second wavelength band different from the first wavelength band among all wavelength bands of the first light; and a third filter 830, which selectively transmits light of a third wavelength band. The plurality of filters 810, 820, 830 may be selectively arranged at the lower part of the light detection unit 600 by means of the driving unit 840. The first light may be one of the blue, green and red wavelength bands.

[0139] Reference Fig.13 , then illustratively, the blue micro-luminescent element can emit blue light with a peak in the 440nm to 460nm band. Although multiple blue micro-luminescent elements are grown on one wafer, the main peaks are slightly different due to slightly different growth conditions. At this time, the light emission band of each blue micro-luminescent element 100 can have a band of approximately 5nm. That is, the half-peak width of the main peak of the blue light emitted from each light-emitting element will be very narrow.

[0140] For example, when 100 blue micro-luminescent elements are produced, although they all emit blue light, 32 of them can have a wavelength band of 440nm to 445nm, 38 can have a wavelength band of 446nm to 450nm, and the remaining 30 can have a wavelength band of 451nm to 455nm.

[0141] Therefore, when the first optical filter 810 is made to have a transmission wavelength band CA1 of 440nm to 445nm, only blue micro-luminescent elements having a wavelength of 440nm to 445nm can be classified by the first optical filter 810. That is, for elements having a wavelength band of 446nm to 460nm, although they actually emit blue light, they are blocked by the first optical filter 810, and thus are detected as non-luminescent by the light detection unit 600.

[0142] When the second optical filter 820 is formed so that the transmission wavelength band CA2 is 446 nm to 450 nm, only the blue micro-light emitting elements 100 having a wavelength of 446 nm to 450 nm can be classified by the second optical filter 820 .

[0143] In addition, if the third filter 830 is made to have a transmission wavelength band CA3 of 451 nm to 455 nm, only blue micro-luminescent elements 100 having a wavelength of 451 nm to 455 nm can be classified and inspected by the third filter 830. However, the number of filters and the range of the transmission wavelength band can be freely modified.

[0144] Therefore, even among a plurality of blue micro-luminescent elements 100 grown on one wafer, elements having a desired blue wavelength can be finely classified. Since the micro-luminescent elements 100 are used as pixels of a display, configuring elements having the same peak wavelength in blue wavelength is beneficial in terms of color uniformity.

[0145] In addition, the first to third blue micro-light emitting elements 100 may be uniformly mixed and transferred to the panel after being sorted. In this case, the first blue micro-light emitting element (or the second and third blue micro-light emitting elements) will not be concentrated in a certain part, which is beneficial to color uniformity.

[0146] Although the above description uses blue micro-light emitting elements as an example, green micro-light emitting elements and red micro-light emitting elements can also be classified in the same way.

[0147] Fig.14 is a conceptual diagram of an inspection device according to a fourth embodiment of the present invention, Fig.15 is a diagram showing a plurality of light emitting elements that are partially connected, Fig.16 yes Fig.15 A variation of .

[0148] Reference Fig.14 and Fig.15 , then for a plurality of micro light-emitting elements, although the active layer 120 and the second conductive semiconductor layer 130 are separated from each other, the first conductive semiconductor layers 110 may be connected to each other. This light-emitting structure may be a case where the light-emitting diode has not yet been completed.

[0149] In this case, the third power supply unit 430 applies a positive voltage to the first conductive semiconductor layer 110, thereby further accelerating the electron beam passing through the electron beam induction unit 300. At this time, if an electric field is sufficiently formed between the first conductive semiconductor layer 110 and the electron beam irradiation unit 200, the electron beam induction unit 300 may be omitted.

[0150] Reference Fig.16 , the plurality of micro-luminescent elements 100 may also be in a state where the transfer to the display panel 20 is completed. Even when the transfer process of the plurality of micro-luminescent elements 100 is completed, it is necessary to inspect defective elements before the panel assembly is completed. The embodiment has the advantage of being able to inspect even after the transfer to the panel is completed because the micro-luminescent elements can be made to emit light in a non-contact manner.

[0151] Fig.17 is a conceptual diagram of an inspection device according to a fifth embodiment of the present invention, Fig.18a and Fig.18b It is a diagram showing a process of scanning a linear inspection area.

[0152] Reference Fig.17 , the inspection device can perform inspection using the electron beam irradiation module 910. The electron beam irradiation module 910 may include a housing 930 that accommodates the electron beam irradiation unit 200 and the electron beam induction unit 300. The electron beam irradiation unit 200 and the electron beam induction unit 300 may have a size that irradiates only a portion of the plurality of micro-light-emitting elements 100 with electron beams.

[0153] The housing 930 includes a transmission portion 920 for irradiating only a part of the light emitting element with an electron beam, and can be moved in one direction by means of a moving module 940. According to this configuration, the area of ​​the electron beam irradiation portion 200 and the electron beam induction portion 300 can be reduced, and inspection can be performed regardless of the size of the wafer.

[0154] Reference Fig.18a and Fig.18b , the electron beam irradiated from the electron beam irradiation module 910 can be irradiated in a linear shape, and the irradiation areas SN1 and SN2 can be moved in one direction in a line scanning manner to continuously make the micro-luminescent element 100 emit light. However, it is not necessarily limited to this, and the electron beam irradiated from the electron beam irradiation module 910 can also sequentially irradiate the 1 o'clock area, the 5 o'clock area, the 7 o'clock area, and the 11 o'clock area of ​​the substrate 10 in a clockwise direction or a counterclockwise direction.

[0155] Fig.19 is a conceptual diagram of an inspection device according to a sixth embodiment of the present invention.

[0156] Reference Fig.19 , the first electron beam irradiation module 910 and the second electron beam irradiation module 910 may be configured to be inclined with respect to a line perpendicular to the stage 530. The electron beam emitted from the first electron beam irradiation module 910 and the electron beam emitted from the second electron beam irradiation module 910 can irradiate the plurality of micro-light-emitting elements 100 as a whole. If the plurality of micro-light-emitting elements 100 can be irradiated as a whole by means of the first electron beam irradiation module 910, the second electron beam irradiation module 910 may also be omitted.

[0157] According to this configuration, the light detection unit 600 can directly capture the light emitted by the plurality of light emitting elements. This configuration is suitable for a case where the intensity of light emitted from the light emitting elements is weak due to the thickness of the substrate 10 being too thick or the substrate 10 does not transmit light well, such as a display panel substrate or a GaAs substrate.

[0158] The first electron beam irradiation module 910 and / or the second electron beam irradiation module 910 can also irradiate electron beams only to a part of the region of the plurality of micro-luminescent elements. At this time, the stage 530 can move in the horizontal direction. Therefore, the plurality of micro-luminescent elements 100 can emit light in sequence. Therefore, the control unit 700 can analyze the image of light acquired by the light detection unit 600 and detect defective elements in sequence. Alternatively, defective elements can also be detected after the overall scanning is completed.

[0159] Fig. 20 is a conceptual diagram of an inspection device according to a seventh embodiment of the present invention, Fig.21 is a top view of the electron beam induction section. Fig. 22 It is a diagram showing a state where the electron beam inducing portion moves.

[0160] Reference Fig. 20 and Fig.21 According to the embodiment, the inspection device includes: a stage 530, on which a plurality of micro-luminescent elements 100 are arranged; an electron beam irradiation section 200, which irradiates an electron beam to the plurality of micro-luminescent elements 100; an electron beam inducing section 300, which is arranged in a portion of the area between the electron beam irradiation section 200 and the plurality of micro-luminescent elements 100; and a chamber 500, which forms a vacuum inside.

[0161] The electron beam inducing portion 300 may include at least one through hole 310. Although two rectangular through holes 310 are illustrated in the embodiment, the number of through holes 310 may be one, or may be composed of three or more through holes 310. In addition, the shape of the through hole may be a variety of non-rectangular shapes (circular, polygonal).

[0162] The electron beam inducing unit 300 is disposed in a portion of a region between the electron beam irradiation unit 200 and the plurality of micro light emitting elements 100 , and is movable in one direction by means of a moving member 320 .

[0163] Reference Fig. 22 , the electron beam inducing unit 300 moves in one direction by means of the moving member 320, so that the electron beam can be accelerated sequentially. According to this structure, in a state where the electron beam is emitted by the electron beam irradiation unit 200 as a whole, the electron beam can be relatively accelerated at the location where the electron beam inducing unit 300 moves.

[0164] That is, since the electron beam is emitted from the electron beam irradiation unit 200 as a whole, a part of the normal light emitting elements 100 can emit light. However, since the electron beam is not sufficiently accelerated, the light emitting image may be relatively dark. Alternatively, since the electron beam is not effectively incident, a part of the normal light emitting elements 100 may not emit light. Such light images may be processed as invalid.

[0165] However, at the location where the electron beam induction unit 300 is located, since the electron beam that has been sufficiently accelerated is incident on the light-emitting element, a relatively bright light image can be detected. Therefore, the electron beam can be sequentially accelerated as the electron beam induction unit 300 moves, and the light-emitting image in the area where the electron beam is accelerated can be sequentially acquired to detect normal elements. According to this configuration, there is an advantage that the inspection can be performed without being limited by the substrate area of ​​the micro-light-emitting element.

[0166] Fig.23 is a flow chart showing an inspection method according to an embodiment of the present invention, Fig.21 a is a diagram showing a state in which the electron beam measuring unit measures the uniformity of the electron beam. Fig. 22 b is a diagram showing a state in which the first electrode layer and the electron beam measurement unit are divided into a plurality of regions.

[0167] Reference Figure 1 and Fig.23 , the inspection method according to an embodiment of the present invention may include: step S10 of forming a vacuum inside the chamber 500; step S20 of irradiating an electron beam to the micro-luminescent element 100 arranged inside the chamber 500; step S30 of measuring the luminous intensity of the micro-luminescent element 100; and step S40 of judging whether the micro-luminescent element 100 is defective.

[0168] In the step S10 of forming a vacuum inside the chamber 500, if the micro-light emitting element 100 is disposed in the chamber 500, the vacuum pump can be started to adjust the vacuum inside the chamber 500 to 10 -5 If the vacuum in the chamber 500 is adjusted to 10 -5 If the voltage is below Torr, the electron beam can be prevented from scattering and forming plasma.

[0169] In step S20 of irradiating the micro-luminescent element 100 disposed inside the chamber 500 with an electron beam, the electron beam irradiation unit 200 can be driven with a high voltage of 3000V to 5000V with a pulse of less than 1KHz, and a positive voltage of 8000V to 12000V can be applied to the electron beam inducing unit 300 to accelerate the electron beam.

[0170] If the electron beam irradiates the micro-luminescent element 100, the electron beam collides in the active layer to generate electron-hole pairs. The generated electron-hole pairs are confined in the well layer by the barrier layer of the active layer. The confined electrons and holes can emit visible light through recombination.

[0171] The intensity of visible light emitted from the micro-luminescent element 100 may be proportional to the intensity (or density) of the electron beam. Therefore, the intensity (or density) of the electron beam may be adjusted to detect the light emitted from the micro-luminescent element 100 and determine whether it is defective.

[0172] In step S30 of measuring the light intensity of the micro-luminescent element 100, the light detection unit 600 can obtain images of light emitted by multiple micro-luminescent elements 100. The light detection unit 600 can be a camera, but is not necessarily limited thereto, and can be applied to various detection devices capable of detecting whether the micro-luminescent element 100 emits light without limitation.

[0173] The light detection unit 600 may convert the collected light image into an electrical signal and transmit the electrical signal to the control unit 700 .

[0174] At this time, the filter 800 can be used to selectively transmit only a portion of the wavelength band of the first light emitted from the light emitting element. Figures 10 to 13 The contents described in.

[0175] In step S40 of determining whether the micro-luminescent element 100 is defective, light emitted from each micro-luminescent element 100 may be detected and a micro-luminescent element 100 that emits light with a predetermined reference intensity or less may be determined to be defective.

[0176] According to an embodiment, the steps between forming a vacuum step S10 and irradiating an electron beam step S20 may include: a step of measuring the electron beam intensity in a plurality of irradiation areas of an electron beam irradiation unit 200 disposed inside a chamber 500; and a step of adjusting the electron beam intensity of an irradiation area out of a predetermined intensity range among the plurality of irradiation areas.

[0177] Reference Fig.24a and Figure 24b , in the step of measuring the electron beam intensity, the electron beam measuring unit 30 can first measure the uniformity of the electron beam before irradiating the electron beam to the micro-luminescent element 100. Through the driving unit (not shown), the electron beam measuring unit 30 can be arranged between the electron beam irradiation unit 200 and the stage 530 during measurement, and can be separated from the electron beam irradiation unit 200 and the stage 530 when the measurement is completed.

[0178] The electron beam measuring unit 30 may be divided into a plurality of sensing areas P1 to P24. The plurality of sensing areas P1 to P24 may be configured to match the plurality of irradiation areas S1 to S24. Therefore, the values ​​measured in the plurality of sensing areas P1 to P24 may be used to determine which irradiation area has an uneven electron beam.

[0179] In the step of adjusting the electron beam intensity, locations where the electron beam intensity is relatively uneven may be detected and adjusted so that the electron beam intensity in the corresponding area matches a predetermined reference range (or average intensity).

[0180] Illustratively, the voltage level of the irradiated region may be increased for a location where the intensity of the electron beam is weak, and the voltage level of the irradiated region may be decreased for a location where the intensity of the electron beam is strong.

[0181] The above description is centered on the embodiment, but this is only an example and does not limit the present invention. A person skilled in the art will understand that various modifications and applications not shown above can be made within the scope of the essential characteristics of the present embodiment. For example, each component specifically appearing in the embodiment can be implemented in a modified manner. Moreover, it should be interpreted that each difference related to these modifications and applications is included in the scope of the present invention as specified in the attached claims.

Claims

1. An inspection device, comprising: A stage, a plurality of micro-light-emitting elements are arranged on the stage; an electron beam irradiation unit for irradiating the plurality of micro-light-emitting elements with electron beams; a light detection unit that acquires an image of light emitted from the plurality of micro-luminescent elements; an electron beam inducing portion disposed between the electron beam irradiating portion and the plurality of micro-luminescent elements; and A control unit determines whether the plurality of micro-luminescent elements are defective based on the image of light acquired by the light detection unit.

2. The inspection device according to claim 1, wherein: The electron beam inducing portion includes at least one through hole through which the electron beam passes.

3. The inspection device according to claim 2, wherein: The electron beam inducing portion has a grid shape.

4. The inspection device according to claim 2, wherein: At least one through hole of the electron beam inducing portion is formed to be elongated.

5. The inspection device according to claim 2, wherein: The electron beam inducing portion has an area corresponding to a portion of the stage. The electron beam inducing portion moves in one direction between the stage and the electron beam irradiating portion.

6. The inspection device according to claim 1, wherein: The ratio of the first distance to the second distance (first distance: second distance) is 1:0.6 to 1:0.99, wherein the first distance is the distance between the electron beam irradiation portion and the micro-luminescent element, and the second distance is the distance between the electron beam irradiation portion and the electron beam inducing portion.

7. The inspection device according to claim 1, wherein: The electron beam inducing section includes: A first electron beam inducing section is disposed between the electron beam irradiating section and the plurality of micro-luminescent elements; and The second electron beam inducing portion is arranged between the first electron beam inducing portion and the plurality of micro light emitting elements.

8. The inspection device according to claim 1, wherein: The electron beam irradiation unit includes an electrode layer, a plurality of emitters formed on the electrode layer and emitting electrons to the plurality of micro-light-emitting elements, and a gate electrode disposed apart from the electrode layer. The emitter includes carbon nanotubes.

9. The inspection device according to claim 8, wherein: A voltage level applied to the electron beam inducing portion is higher than a voltage level applied to the gate electrode.

10. The inspection device according to claim 1, wherein: The plurality of micro-light-emitting elements include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. When irradiated with electron beams, the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer each emit light.

11. The inspection device according to claim 10, wherein: comprising a filter for shielding a portion of the light incident on the light detection unit, The optical filter transmits the first light emitted from the active layer and blocks the second light emitted from the first conductive type semiconductor layer or the second conductive type semiconductor layer.

12. The inspection device according to claim 10, wherein: comprising a filter array for shielding a portion of the light incident on the light detection unit, The optical filter array includes: a first optical filter that selectively transmits light of a first wavelength band among all wavelength bands of the first light emitted from the active layer of the plurality of micro-luminescent elements; and a second optical filter that selectively transmits light of a second wavelength band different from the first wavelength band among all wavelength bands of the first light. The first light is any one of blue light, green light and red light.

13. The inspection device according to claim 12, wherein: The optical filter array includes a driving unit that selectively arranges the first optical filter and the second optical filter on the light detecting unit.

14. The inspection device according to claim 1, wherein: A vibration unit for applying vibration to the electron beam irradiation portion is included.

15. The inspection device according to claim 2, wherein: The stage or the electron beam inducing portion moves in one direction so that the micro light emitting element overlapping with the electron beam inducing portion is exposed to the through hole of the electron beam inducing portion.

16. The inspection device according to claim 1, in, include: a chamber in which the stage, the electron beam irradiation section, and the electron beam induction section are arranged; and A vacuum pump is used to create a vacuum inside the chamber.

17. The inspection device according to claim 1, wherein: include: a housing that accommodates the electron beam irradiation unit and the electron beam induction unit; and a moving module that moves the housing. The electron beam emitted from the housing irradiates only a part of the plurality of micro-light-emitting elements, and the irradiation area of ​​the electron beam moves in one direction by means of the moving module.

18. The inspection device according to claim 17, wherein: The housing is arranged to be inclined with respect to an imaginary line perpendicular to the stage.

19. An inspection method, comprising: The step of forming a vacuum inside the chamber; a step of irradiating a plurality of micro-light-emitting elements disposed inside the chamber with electron beams; The step of measuring the luminous intensity of the plurality of micro-luminescent elements; and The step of judging whether the plurality of micro-luminescent elements are defective, The electron beam is accelerated by an electron beam inducing section disposed between the electron beam irradiation section and the plurality of micro light emitting elements and injected into the plurality of micro light emitting elements.

20. The inspection method according to claim 19, wherein: In the step of measuring the light emission intensity, light of a part of all wavelength bands of the first light emitted from the active layers of the plurality of micro light emitting elements is selectively transmitted.

Images