Preparation method of semiconductor chamber and semiconductor chamber

Abstract

The invention discloses a preparation method of a semiconductor chamber and the semiconductor chamber, and relates to the technical field of semiconductor chamber preparation. The method comprises the steps that according to the size of a target semiconductor cavity, a stainless steel material is cut and then forged to form a cavity model; rough machining is conducted on the cavity model, then solid solution heat treatment is conducted, and a cavity blank is obtained; the upper surface, the inner surface, the outer surface and the lower surface of the cavity blank are subjected to finish machining, and an initial cavity blank is obtained; the inner surface of the primary cavity blank is polished, the outer surface of the primary cavity blank is milled, the lower surface of the primary cavity blank is ground, and a semi-finished cavity is obtained; and carrying out helium leak detection on the semi-finished product chamber to obtain a finished product semiconductor chamber. The surface roughness of the semiconductor chamber can reach within Ra0.2, the dimensional tolerance reaches + / -0.01 mm, and the product structure is not easy to deform in the subsequent processing and using process, so that the overall performance of the device is not influenced.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor chamber preparation, and in particular to a method for preparing a semiconductor chamber and a semiconductor chamber. Background Art

[0002] Thin film deposition is one of the key processes in wafer processing, which is mainly divided into physical vapor deposition (PVD) and chemical vapor deposition (CVD). Semiconductor chemical vapor deposition is the main technology used to prepare high-purity, high-performance solid films. In a typical CVD process, one or more vapor source atoms or molecules are introduced into the chamber, and chemical reactions occur under the action of external energy to form the required thin film on the substrate surface. Therefore, there are high requirements for the purity, corrosion resistance, roughness and dimensional accuracy of semiconductor chamber materials. High-purity materials and high-precision inner surfaces will directly affect the molding effect of chamber molecules or vapor source atoms. However, the surface roughness and accuracy of current semiconductor chambers are difficult to meet the conditions for use in a high vacuum environment. Based on this, this application proposes a method for preparing a semiconductor chamber and a semiconductor chamber. Summary of the invention

[0003] The main purpose of the present application is to provide a method for preparing a semiconductor chamber and a semiconductor chamber, aiming to solve the technical problem that the surface roughness and precision of the existing semiconductor chamber need to be improved.

[0004] To achieve the above objectives, the present application proposes a method for preparing a semiconductor chamber, comprising the following steps:

[0005] According to the size of the target semiconductor chamber, the stainless steel material is cut and then forged to form a chamber model;

[0006] The cavity model is rough-machined and then subjected to solution heat treatment to obtain a cavity blank;

[0007] Respectively finishing the upper surface, inner surface, outer surface and lower surface of the cavity blank to obtain a cavity blank;

[0008] Polishing the inner surface of the cavity blank, milling the outer surface of the cavity blank, and grinding the lower surface of the cavity blank to obtain a semi-finished cavity;

[0009] After the semi-finished chamber is leak-tested with helium, a finished semiconductor chamber is obtained.

[0010] Optionally, in the step of rough-machining the chamber model, a lathe is used to rough-machining the inner cavity of the chamber model so that the flatness of the inner surface of the chamber model is ≤0.01 mm / m.

[0011] Optionally, in the step of performing solution heat treatment, the solution heat treatment temperature is 1050°C-1150°C, and the holding time is 0.8h-1.2h.

[0012] Optionally, in the steps of respectively finishing the upper surface, inner surface, outer surface and lower surface of the chamber blank, a CNC lathe is used to respectively finish the upper surface, inner surface, outer surface and lower surface of the chamber blank, with a machining allowance of 0.08mm-0.12mm, and a spindle speed of the CNC lathe is 3200r / min-3400r / min.

[0013] Optionally, the step of polishing the inner surface of the cavity blank comprises:

[0014] The inner surface of the cavity blank is ground by a diamond grinding wheel, the grinding speed of the diamond grinding wheel is 180m / min-220m / min, and the grinding feed rate is 5μm / min-8μm / min;

[0015] Then, the inner surface of the cavity blank is polished with 120-mesh metallographic sandpaper and 80-mesh metallographic sandpaper in turn, so that the inner surface roughness of the cavity blank reaches Ra0.2 or less.

[0016] Optionally, in the step of milling the outer surface of the chamber blank, the outer surface of the chamber blank is milled by a milling machine to form chamfers, threaded holes and inner arcs; wherein the milling machine speed is 5000r / min-6000r / min, and the feed speed is 60mm / min-90mm / min.

[0017] Optionally, in the step of grinding the lower surface of the chamber blank, the lower surface of the chamber blank is ground by a grinder based on the upper surface of the chamber blank; wherein the grinding speed is set to 150m / min-180m / min.

[0018] Optionally, the step of performing helium leak detection on the semi-finished product chamber comprises:

[0019] The semi-finished product chamber is sealed, and a leak detection fixture joint is installed on the upper surface of the semi-finished product chamber, and then vacuum is drawn to perform helium leak detection; wherein the helium leak rate is ≤1×10 -13 Pa·m 3 / s.

[0020] Optionally, the dimensional tolerance of the finished semiconductor chamber is -0.01 mm to 0.01 mm.

[0021] The present application also proposes a water cooling plate assembly obtained by using the above-mentioned method for preparing the semiconductor chamber.

[0022] This application includes at least the following beneficial effects:

[0023] The present application adopts 316L VIM / VAR high-cleanliness stainless steel to prepare the semiconductor chamber, the inner surface quality of which is in an extremely pure state, and its corrosion resistance, roughness and dimensional accuracy are all high, which can meet the use requirements of the high-purity and high-performance solid film preparation process, and can be used as a semiconductor chamber material. The present application cuts and forges the 316L VIM / VAR stainless steel material to form a chamber model, and then performs rough machining, and improves the internal structure of the chamber blank through solid solution heat treatment to make its structure stable, and significantly improve the internal material properties of the chamber blank, thereby improving its temperature resistance and corrosion resistance, and then respectively performs fine machining on the upper surface, inner surface, outer surface and lower surface of the chamber blank, thereby improving the dimensional accuracy of the chamber blank, and then polishes the inner surface, mills the outer surface, and grinds the lower surface, thereby significantly improving the surface roughness and dimensional tolerance of the chamber. The semiconductor chamber is poor, and then a helium leak test is performed to ensure that the obtained semiconductor chamber has good welding sealing performance and airtightness, so that the finished semiconductor chamber obtained in the present application has extremely high purity and a smooth inner surface, which is beneficial to the molecular or vapor source atom forming effect in the semiconductor chamber. The surface roughness of the product can reach within Ra0.2, and the dimensional tolerance can reach ±0.01mm. In the subsequent processing and use process, the product structure is not easy to deform and thus affect the overall performance of the device. At the same time, it has high temperature resistance and corrosion resistance, and can meet the conditions for use in a high vacuum environment. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. It is obvious that the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0025] Figure 1 This is a flow chart of a method for preparing a semiconductor chamber according to an embodiment of the present application;

[0026] Figure 2 This is a schematic diagram of the structure of the semiconductor chamber described in an embodiment of the present application;

[0027] Figure 3 This is a schematic diagram of the connection between the semiconductor chamber and the leak detection fixture joint described in an embodiment of the present application.

[0028] Reference numerals:

[0029] 1-semiconductor chamber; 11-upper surface; 12-inner surface; 13-outer surface; 14-lower surface; 2-leak detection tool joint.

[0030] The realization of the purpose, functional features and advantages of this application will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0032] In view of the technical problems existing in the existing semiconductor chamber, the embodiments of the present application provide a method for preparing a semiconductor chamber, such as Figure 1 As shown, the following steps are included:

[0033] According to the size of the target semiconductor chamber, the stainless steel material is cut and then forged to form a chamber model;

[0034] The cavity model is rough-machined and then subjected to solution heat treatment to obtain a cavity blank;

[0035] The upper surface 11, the inner surface 12, the outer surface 13 and the lower surface 14 of the cavity blank are respectively fine-machined to obtain a cavity blank;

[0036] The inner surface 12 of the cavity blank is polished, the outer surface 13 of the cavity blank is milled, and the lower surface 14 of the cavity blank is ground to obtain a semi-finished cavity;

[0037] After the semi-finished chamber is leak-tested with helium, a finished semiconductor chamber 1 is obtained.

[0038] In the specific implementation process, the stainless steel material selected in this application is 316L VIM / VAR high-cleanliness stainless steel.

[0039] The present application adopts 316L VIM / VAR high-cleanliness stainless steel to prepare the semiconductor chamber 1, and the inner surface 12 thereof is in an extremely pure state, and has high corrosion resistance, roughness, and dimensional accuracy, etc., and can meet the use requirements of the high-purity, high-performance solid film preparation process, and can be used as a semiconductor chamber material. ... After the VIM / VAR stainless steel material is cut and forged to form a chamber model, rough machining is performed, and the internal structure of the chamber blank is improved by solution heat treatment to stabilize its structure and significantly improve the internal material properties of the chamber blank, thereby improving its temperature resistance and corrosion resistance. Then, the upper surface 11, the inner surface 12, the outer surface 13 and the lower surface 14 of the chamber blank are respectively fine-machined to improve the dimensional accuracy of the chamber blank. Then, the inner surface 12 is polished, the outer surface 13 is milled, and the lower surface 14 is ground, thereby significantly improving the surface roughness and dimensional tolerance of the chamber. Then, helium leak detection is performed to ensure that the obtained semiconductor chamber 1 has good welding sealing performance and airtightness, so that the finished semiconductor chamber 1 obtained in the present application has extremely high purity and a smooth inner surface 12, which is beneficial to the molecular or vapor source atom forming effect in the semiconductor chamber 1. In the subsequent processing and use process, its product structure is not easy to deform and thus affect the overall performance of the device. At the same time, it has high temperature resistance and corrosion resistance, and can meet the conditions for use in a high vacuum environment.

[0040] As an implementation method of the present application, in the step of rough-machining the cavity model, a lathe is used to rough-machining the inner cavity of the cavity model so that the flatness of the inner surface 12 of the cavity model is ≤0.01 mm / m.

[0041] Specifically, flatness refers to the deviation of the macroscopic concave-convex height of the inner surface 12 of the chamber model from the ideal plane. The present application controls the flatness of the inner surface 12 of the chamber model to be ≤0.01 mm / m, so that the obtained chamber inner surface 12 has a higher precision, thereby improving the product quality of the semiconductor chamber 1.

[0042] As an implementation method of the present application, in the step of performing the solution heat treatment, the solution heat treatment temperature is 1050°C-1150°C, and the holding time is 0.8h-1.2h.

[0043] Specifically, when performing solution heat treatment, a resistance heating furnace can be used to increase the temperature. It is preferred to set the temperature to 1100°C and keep it warm for 1 hour, so that the excess phase can be fully dissolved into the solid solution, and then immersed in water and quickly cooled to obtain a supersaturated solid solution. The internal organization of the chamber can be improved, and the internal material properties of the chamber can be significantly improved, thereby making the product structure more stable and avoiding deformation during subsequent use.

[0044] As an implementable embodiment of the present application, in the steps of respectively finishing the upper surface 11, inner surface 12, outer surface 13 and lower surface 14 of the chamber blank, a CNC lathe is used to respectively finish the upper surface 11, inner surface 12, outer surface 13 and lower surface 14 of the chamber blank, with a machining allowance of 0.08mm-0.12mm, and a spindle speed of the CNC lathe is 3200r / min-3400r / min.

[0045] As an implementation method of the present application, the step of polishing the inner surface 12 of the cavity blank includes:

[0046] The inner surface 12 of the cavity blank is ground by a diamond grinding wheel, the grinding speed of the diamond grinding wheel is 180m / min-220m / min, and the grinding feed rate is 5μm / min-8μm / min;

[0047] Then, the inner surface 12 of the cavity blank is polished with 120-mesh metallographic sandpaper and 80-mesh metallographic sandpaper in turn, so that the roughness of the inner surface 12 of the cavity blank reaches Ra0.2 or less.

[0048] In the present application, the inner surface 12 of the chamber blank is first polished by a diamond grinding wheel, and then polished with 120-mesh metallographic sandpaper and 80-mesh metallographic sandpaper, so that the roughness of the inner surface 12 of the chamber blank can be controlled below Ra0.2, making it have a smoother surface, thereby reducing the possibility of stress concentration, delaying the generation and development of fatigue cracks, and ensuring that the semiconductor chamber 1 has good sealing performance.

[0049] As an implementable embodiment of the present application, in the step of milling the outer surface 13 of the chamber blank, the outer surface 13 of the chamber blank is milled by a milling machine to form chamfers, threaded holes and inner arcs; wherein the milling machine speed is 5000r / min-6000r / min, and the feed speed is 60mm / min-90mm / min.

[0050] In the specific implementation process, the higher the speed of the milling machine, the higher the cutting efficiency, but too high a speed may cause increased tool wear and vibration, affecting the processing accuracy. The feed speed directly affects the processing efficiency and surface quality. Too fast a feed speed may increase the cutting force, increase tool wear, and even cause vibration and surface roughness. In this application, the milling machine speed is preferably set to 5500r / min, and the feed speed is preferably set to 75mm / min.

[0051] As an implementable embodiment of the present application, in the step of grinding the lower surface 14 of the chamber blank, the lower surface 14 of the chamber blank is ground by a grinder with the upper surface 11 of the chamber blank as a reference; wherein the grinding speed is set to 150m / min-180m / min.

[0052] In the specific implementation process, increasing the grinding speed can improve the surface quality and increase production efficiency, but too high a speed may cause increased wear of the grinder and reduced processing accuracy. The present application preferably sets the grinding speed to 165m / min.

[0053] As an implementable embodiment of the present application, the step of performing helium leak detection on the semi-finished chamber includes:

[0054] The semi-finished product chamber is sealed, and a leak detection fixture joint 2 is installed on the upper surface 11 of the semi-finished product chamber, and then vacuum is drawn to perform helium leak detection; wherein the helium leak rate is ≤1×10 -13 Pa·m 3 / s.

[0055] In the specific implementation process, the present application uses a helium leak detector for helium leak detection. The specific operation steps are as follows: after the power is turned on, when the background of the leak detector shows 5×10 -13 Pa·m 3 / s, the leak detector is ready for testing; use anhydrous ethanol to wipe the leak detection tool joint 2, the sealing ring and the contact surface of the workpiece to be tested. For any leak detection tool used for the first time, its airtightness needs to be tested; start vacuuming after the connection is completed; use a needle to inject a small amount of alcohol at the sealing ring for sealing, and the next step can be performed after the displayed value is basically stable; use helium to purge the weld. If there are multiple welds, proceed from top to bottom and record the final test value; after the leak detection is completed, deflate. If the leak rate continues to rise slowly during the leak detection process, it may be caused by leakage. Leakage means that helium stays in one place for too long. This supersaturation will cause leakage. When leakage may occur, nitrogen needs to be used to purge the test parts and leak detector.

[0056] Specifically, the difference between real leakage and seepage is shown in Table 1.

[0057] Table 1

[0058]

[0059]

[0060] After testing, the helium leakage rate of the chamber of this application is ≤1×10 -13 Pa·m 3 / s, which has higher sealing performance.

[0061] As an implementation method of the present application, the dimensional tolerance of the finished semiconductor chamber 1 is -0.01 mm to 0.01 mm.

[0062] The embodiment of the present application further provides a semiconductor chamber 1 obtained by the above-mentioned method for preparing the semiconductor chamber.

[0063] The above technical solution of the present application is described in detail below in conjunction with specific embodiments.

[0064] Example 1

[0065] A method for preparing a semiconductor chamber comprises the following steps:

[0066] According to the size of the target semiconductor chamber, the stainless steel material is cut and then forged to form a chamber model;

[0067] The inner cavity of the cavity model is roughly machined by a lathe to make the flatness of the inner surface 12 of the cavity model ≤ 0.01 mm / m, and then solution heat treatment is performed at a temperature of 1100° C. for a holding time of 1.0 h to obtain a cavity blank;

[0068] The upper surface 11, the inner surface 12, the outer surface 13 and the lower surface 14 of the cavity blank are respectively fine-machined by a CNC lathe, with a machining allowance of 0.10 mm and a spindle speed of 3300 r / min, to obtain a cavity blank;

[0069] The inner surface 12 of the cavity blank is ground with a diamond grinding wheel, the grinding speed of the diamond grinding wheel is 200 m / min, and the grinding feed rate is 6 μm / min;

[0070] Then, the inner surface 12 of the cavity blank is polished with 120-mesh metallographic sandpaper and 80-mesh metallographic sandpaper in turn, so that the roughness of the inner surface 12 of the cavity blank reaches Ra0.2 or less;

[0071] The outer surface 13 of the cavity blank is milled by a milling machine to form chamfers, threaded holes and inner arcs; wherein the rotation speed of the milling machine is 5500r / min and the feed speed is 75mm / min;

[0072] Taking the upper surface 11 of the cavity blank as a reference, a grinder is used to grind the lower surface 14 of the cavity blank; wherein the grinding speed is set to 165 m / min, and a semi-finished cavity is obtained;

[0073] The semi-finished product chamber is sealed, and a leak detection fixture joint 2 is installed on the upper surface 11 of the semi-finished product chamber, and then vacuum is drawn to perform helium leak detection; wherein the helium leak rate is ≤1×10-13 Pa·m 3 / s, a finished semiconductor chamber 1 is obtained, and its dimensional tolerance is -0.005mm.

[0074] Example 2

[0075] A method for preparing a semiconductor chamber comprises the following steps:

[0076] According to the size of the target semiconductor chamber, the stainless steel material is cut and then forged to form a chamber model;

[0077] The inner cavity of the cavity model is roughly machined by a lathe to make the flatness of the inner surface 12 of the cavity model ≤ 0.01 mm / m, and then solution heat treatment is performed at a temperature of 1050° C. for a holding time of 1.2 h to obtain a cavity blank;

[0078] The upper surface 11, the inner surface 12, the outer surface 13 and the lower surface 14 of the cavity blank are respectively fine-machined by a CNC lathe, with a machining allowance of 0.08 mm and a spindle speed of 3200 r / min, to obtain a cavity blank;

[0079] The inner surface 12 of the cavity blank is ground by a diamond grinding wheel, the grinding speed of the diamond grinding wheel is 180 m / min, and the grinding feed rate is 8 μm / min;

[0080] Then, the inner surface 12 of the cavity blank is polished with 120-mesh metallographic sandpaper and 80-mesh metallographic sandpaper in turn, so that the roughness of the inner surface 12 of the cavity blank reaches Ra0.2 or less;

[0081] The outer surface 13 of the cavity blank is milled by a milling machine to form chamfers, threaded holes and inner arcs; wherein the milling machine has a rotation speed of 5000 r / min and a feed speed of 60 mm / min;

[0082] Taking the upper surface 11 of the cavity blank as a reference, a grinder is used to grind the lower surface 14 of the cavity blank; wherein the grinding speed is set to 150 m / min, to obtain a semi-finished cavity;

[0083] The semi-finished product chamber is sealed, and a leak detection fixture joint 2 is installed on the upper surface 11 of the semi-finished product chamber. Figure 3 As shown, vacuum is then drawn and helium leak detection is performed; the helium leak rate is ≤1×10 -13 Pa·m 3 / s, a finished semiconductor chamber 1 is obtained, and its dimensional tolerance is -0.01mm.

[0084] Example 3

[0085] A method for preparing a semiconductor chamber comprises the following steps:

[0086] According to the size of the target semiconductor chamber, the stainless steel material is cut and then forged to form a chamber model;

[0087] The inner cavity of the cavity model is roughly machined by a lathe to make the flatness of the inner surface 12 of the cavity model ≤ 0.01 mm / m, and then solution heat treatment is performed at a temperature of 1150° C. for a holding time of 0.8 h to obtain a cavity blank;

[0088] The upper surface 11, the inner surface 12, the outer surface 13 and the lower surface 14 of the cavity blank are respectively fine-machined by a CNC lathe, with a machining allowance of 0.12 mm and a spindle speed of 3400 r / min, to obtain a cavity blank;

[0089] The inner surface 12 of the cavity blank is ground by a diamond grinding wheel, the grinding speed of the diamond grinding wheel is 220 m / min, and the grinding feed rate is 8 μm / min;

[0090] Then, the inner surface 12 of the cavity blank is polished with 120-mesh metallographic sandpaper and 80-mesh metallographic sandpaper in turn, so that the roughness of the inner surface 12 of the cavity blank reaches Ra0.2 or less;

[0091] The outer surface 13 of the cavity blank is milled by a milling machine to form chamfers, threaded holes and inner arcs; wherein the milling machine has a rotation speed of 6000 r / min and a feed speed of 90 mm / min;

[0092] Taking the upper surface 11 of the cavity blank as a reference, a grinder is used to grind the lower surface 14 of the cavity blank; wherein the grinding speed is set to 180 m / min, to obtain a semi-finished cavity;

[0093] The semi-finished product chamber is sealed, and a leak detection fixture joint 2 is installed on the upper surface 11 of the semi-finished product chamber, and then vacuum is drawn to perform helium leak detection; wherein the helium leak rate is ≤1×10 -13 Pa·m 3 / s, a finished semiconductor chamber 1 is obtained, and its dimensional tolerance is 0.01mm.

[0094] Example 4

[0095] A method for preparing a semiconductor chamber comprises the following steps:

[0096] According to the size of the target semiconductor chamber, the stainless steel material is cut and then forged to form a chamber model;

[0097] The inner cavity of the cavity model is roughly machined by a lathe to make the flatness of the inner surface 12 of the cavity model ≤ 0.01 mm / m, and then solution heat treatment is performed at a temperature of 1090° C. for a holding time of 0.9 h to obtain a cavity blank;

[0098] The upper surface 11, the inner surface 12, the outer surface 13 and the lower surface 14 of the cavity blank are respectively fine-machined by a CNC lathe, with a machining allowance of 0.09 mm and a spindle speed of 3350 r / min, to obtain a cavity blank;

[0099] The inner surface 12 of the cavity blank is ground by a diamond grinding wheel, the grinding speed of the diamond grinding wheel is 190 m / min, and the grinding feed rate is 7 μm / min;

[0100] Then, the inner surface 12 of the cavity blank is polished with 120-mesh metallographic sandpaper and 80-mesh metallographic sandpaper in turn, so that the roughness of the inner surface 12 of the cavity blank reaches Ra0.2 or less;

[0101] The outer surface 13 of the cavity blank is milled by a milling machine to form chamfers, threaded holes and inner arcs; wherein the rotation speed of the milling machine is 5800 r / min and the feed speed is 80 mm / min;

[0102] Taking the upper surface 11 of the cavity blank as a reference, a grinder is used to grind the lower surface 14 of the cavity blank; wherein the grinding speed is set to 175 m / min, and a semi-finished cavity is obtained;

[0103] The semi-finished product chamber is sealed, and a leak detection fixture joint 2 is installed on the upper surface 11 of the semi-finished product chamber, and then vacuum is drawn to perform helium leak detection; wherein the helium leak rate is ≤1×10 -13 Pa·m 3 / s, a finished semiconductor chamber 1 is obtained, and its dimensional tolerance is 0.008mm.

[0104] The above description is only an optional embodiment of the present application, and does not limit the patent scope of the present application. All equivalent structural transformations made by using the contents of the present application specification and drawings under the inventive concept of the present application, or directly / indirectly applied in other related technical fields are included in the patent protection scope of the present application.

Claims

1. A method for preparing a semiconductor chamber, characterized in that: The following steps are involved: According to the size of the target semiconductor chamber, the stainless steel material is cut and then forged to form a chamber model; The cavity model is rough-machined and then subjected to solution heat treatment to obtain a cavity blank; Respectively finishing the upper surface, inner surface, outer surface and lower surface of the cavity blank to obtain a cavity blank; Polishing the inner surface of the cavity blank, milling the outer surface of the cavity blank, and grinding the lower surface of the cavity blank to obtain a semi-finished cavity; After the semi-finished chamber is leak-tested with helium, a finished semiconductor chamber is obtained.

2. The method for preparing a semiconductor chamber according to claim 1, characterized in that: In the step of rough machining the cavity model, a lathe is used to rough machine the inner cavity of the cavity model so that the flatness of the inner surface of the cavity model is ≤0.01 mm / m.

3. The method for preparing a semiconductor chamber according to claim 1, characterized in that: In the step of performing the solution heat treatment, the solution heat treatment temperature is 1050° C.-1150° C., and the holding time is 0.8 h-1.2 h.

4. The method for preparing a semiconductor chamber according to claim 1, characterized in that: In the steps of respectively finishing the upper surface, inner surface, outer surface and lower surface of the chamber blank, a CNC lathe is used to respectively finish the upper surface, inner surface, outer surface and lower surface of the chamber blank, with a machining allowance of 0.08mm-0.12mm, and a spindle speed of the CNC lathe is 3200r / min-3400r / min.

5. The method for preparing a semiconductor chamber according to claim 1, characterized in that: The step of polishing the inner surface of the cavity blank comprises: The inner surface of the cavity blank is ground by a diamond grinding wheel, the grinding speed of the diamond grinding wheel is 180m / min-220m / min, and the grinding feed rate is 5μm / min-8μm / min; Then, the inner surface of the cavity blank is polished with 120-mesh metallographic sandpaper and 80-mesh metallographic sandpaper in turn, so that the inner surface roughness of the cavity blank reaches Ra0.2 or less.

6. The method for preparing a semiconductor chamber according to claim 1, characterized in that: In the step of milling the outer surface of the chamber blank, the outer surface of the chamber blank is milled by a milling machine to form chamfers, threaded holes and inner arcs; wherein the milling machine speed is 5000r / min-6000r / min, and the feed speed is 60mm / min-90mm / min.

7. The method for preparing a semiconductor chamber according to claim 1, characterized in that: In the step of grinding the lower surface of the chamber blank, the lower surface of the chamber blank is ground by a grinder based on the upper surface of the chamber blank; wherein the grinding speed is set to 150m / min-180m / min.

8. The method for preparing a semiconductor chamber according to claim 1, characterized in that: The step of performing helium leak detection on the semi-finished chamber comprises: The semi-finished product chamber is sealed, and a leak detection fixture joint is installed on the upper surface of the semi-finished product chamber, and then vacuum is drawn to perform helium leak detection; wherein the helium leak rate is ≤1×10 -13 Pa·m 3 / s.

9. The method for preparing a semiconductor chamber according to claim 1, characterized in that: The dimensional tolerance of the finished semiconductor chamber is -0.01 mm to 0.01 mm.

10. A semiconductor chamber, characterized in that: The semiconductor chamber is obtained by the method for preparing the semiconductor chamber according to any one of claims 1 to 9.

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