Semiconductor laser element

Abstract

The semiconductor laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, a quantum harmonic oscillator layer is arranged between the lower limiting layer and the lower waveguide layer, and the Philips ionization degree distribution in the quantum harmonic oscillator layer is designed. And the relation of the Philips ionization degree among the lower limiting layer, the lower waveguide layer and the quantum harmonic oscillator layer. The performance of the semiconductor laser chip can be improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor optoelectronic devices, and in particular to a semiconductor laser element. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are big differences between lasers and nitride semiconductor light-emitting diodes:

[0004] 1) Laser is generated by stimulated radiation of carriers, the spectrum half-width is small, the brightness is very high, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneously radiated, and the output power of a single light-emitting diode is in the mW level;

[0005] 2) The current density of the laser reaches KA / cm2, which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in the energy level of the electron transition, producing the same coherent light as the photon and the induced photon;

[0007] 4) Different principles: When an external voltage is applied to a light-emitting diode, electron holes jump to a quantum well or a pn junction to generate radiative recombination light, while a laser can only emit when the lasing conditions are met. The carrier distribution in the active region must be reversed, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] Nitride semiconductor lasers have the following problems:

[0009] 1) The large internal lattice mismatch and strain cause strong polarization effect, and the QCSE quantum confined Stark effect strongly limits the improvement of the laser lasing gain;

[0010] 2) The optical waveguide absorption loss is high. Intrinsic carbon impurities in p-type semiconductors will compensate for acceptors and destroy p-type. The ionization rate of p-type doping is low, and a large amount of unionized Mg acceptor impurities will cause internal optical losses to increase.

[0011] 3) Increasing the thickness of the lower confinement layer can reduce the refractive index of the confinement layer, but increasing the thickness of the lower confinement layer will limit the range of component regulation, and easily cause problems such as cracking, bending and quality degradation; at the same time, the light field mode leaks to the substrate to form a standing wave, which will lead to low substrate mode suppression efficiency and poor far-field image FFP quality;

[0012] 4) The activation energy of the Mg acceptor in the p-type semiconductor is large, the ionization efficiency is low, the hole concentration is much lower than the electron concentration, and the hole mobility is much lower than the electron mobility, resulting in serious asymmetric mismatch between electrons and holes in the quantum well, electron leakage and carrier delocalization, more difficult hole transport in the quantum well, uneven carrier injection, uneven gain, broadening of the laser gain spectrum, and decreased peak gain. Summary of the invention

[0013] To solve one of the above technical problems, the present invention provides a semiconductor laser element.

[0014] The embodiment of the present invention provides a semiconductor laser element, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confinement layer arranged in sequence from bottom to top, a quantum resonator layer is arranged between the lower confinement layer and the lower waveguide layer, the lower confinement layer, the lower waveguide layer and the quantum resonator layer all have Philips ionization degree distribution characteristics, and the Philips ionization degree of the lower waveguide layer is ≥ the Philips ionization degree of the quantum resonator layer ≥ the Philips ionization degree of the lower confinement layer, and the Philips ionization degree of the quantum resonator layer has a function y1=A+B*e x / cosx is the third quadrant curve distribution, where x is the depth from the quantum resonator layer to the waveguide layer below.

[0015] Preferably, the lower confinement layer, the lower waveguide layer and the quantum resonator layer all have peak electron drift rate distribution characteristics, and the peak electron drift rate of the lower waveguide layer is ≥ the peak electron drift rate of the quantum resonator layer ≥ the peak electron drift rate of the lower confinement layer, and the peak electron drift rate of the quantum resonator layer has a fourth quadrant curve distribution of the function y2=C+D*x / lnx.

[0016] Preferably, the lower confinement layer, the lower waveguide layer and the quantum resonator layer all have radiation recombination coefficient distribution characteristics, and the radiation recombination coefficient of the lower waveguide layer ≥ the radiation recombination coefficient of the quantum resonator layer ≥ the radiation recombination coefficient of the lower confinement layer, and the radiation recombination coefficient of the quantum resonator layer has the second four-quadrant curve distribution of the function y3=E+F*cosx / x.

[0017] Preferably, the lower confinement layer, the lower waveguide layer and the quantum resonator layer all have valence band effective state density distribution characteristics, and the valence band effective state density of the lower waveguide layer is ≥ the valence band effective state density of the quantum resonator layer ≥ the valence band effective state density of the lower confinement layer, and the valence band effective state density of the quantum resonator layer has the function y4=G+H*sinx / x 2 The third quadrant curve distribution, and E≤A≤C≤G.

[0018] Preferably, the lower confinement layer, the lower waveguide layer and the quantum resonator layer all have an In / Al element ratio distribution characteristic, and the In / Al element ratio of the lower waveguide layer is ≥ the In / Al element ratio of the quantum resonator layer ≥ the In / Al element ratio of the lower confinement layer, and the In / Al element ratio of the quantum resonator layer has a function y5=J+K*e x / cosx third quadrant curve distribution.

[0019] Preferably, the lower confinement layer, the lower waveguide layer and the quantum resonator layer all have an In / H element ratio distribution characteristic, and the In / H element ratio of the lower waveguide layer is ≥ the In / H element ratio of the quantum resonator layer ≥ the In / H element ratio of the lower confinement layer, and the In / Al element ratio of the quantum resonator layer has a function y6=L+M*sinx / x 2 The third quadrant curve distribution.

[0020] Preferably, the lower confinement layer, the lower waveguide layer and the quantum resonator layer all have In / C element ratio distribution characteristics, and the In / C element ratio of the lower waveguide layer ≥ the In / C element ratio of the quantum resonator layer ≥ the In / C element ratio of the lower confinement layer, and the In / C element ratio of the quantum resonator layer has the second four-quadrant curve distribution of the function y7=N+P*cosx / x.

[0021] Preferably, the lower confinement layer, the lower waveguide layer and the quantum resonator layer all have In / O element ratio distribution characteristics, and the In / O element ratio of the lower waveguide layer ≥ the In / O element ratio of the quantum resonator layer ≥ the In / O element ratio of the lower confinement layer, and the In / O element ratio of the quantum resonator layer has a fourth quadrant curve distribution of the function y8=Q+R*x / lnx, and L≤Q≤N≤J.

[0022] Preferably, the quantum resonator layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlInGaN superlattice, GaN / AlN superlattice, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, Co3O4, Mn3O4, LaBr2, La2Br5, Sc7Cl 10 , Bi2LiN or any combination thereof.

[0023] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one or any of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN A combination having a thickness of 10 angstroms to 120 angstroms, and a barrier layer of any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN having a thickness of 10 angstroms to 200 angstroms;

[0024] Preferably, the lower limiting layer, the lower waveguide layer, the upper waveguide layer, and the upper limiting layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0025] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0026] The beneficial effects of the present invention are as follows: the present invention sets a quantum resonator layer between the lower confinement layer and the lower waveguide layer of the semiconductor laser element, designs the Philips ionization degree distribution in the quantum resonator layer, and designs the relationship between the Philips ionization degrees among the lower confinement layer, the lower waveguide layer and the quantum resonator layer, so that the quantum resonator layer enhances the combination of excitons and photons to form a polariton with quantized resonant frequency oscillation, namely a quantum resonator. The quantum resonator has lower optical loss and longer optical propagation distance, thereby extending the life of laser light quanta. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0028] Figure 1 It is a schematic structural diagram of a semiconductor laser element according to an embodiment of the present invention.

[0029] Reference numerals:

[0030] 100. substrate, 101. lower confinement layer, 102. lower waveguide layer, 103. active layer, 104. upper waveguide layer, 105. upper confinement layer, 106. quantum resonator layer. DETAILED DESCRIPTION

[0031] In order to make the technical solutions and advantages in the embodiments of the present application more clearly understood, the exemplary embodiments of the present application are further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than an exhaustive list of all the embodiments. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0032] like Figure 1 As shown, this embodiment provides a semiconductor laser element, including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104 and an upper confinement layer 105 arranged in sequence from bottom to top, and a quantum resonator layer 106 is also arranged in the semiconductor laser element.

[0033] Specifically, in this embodiment, the semiconductor laser element is provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104 and an upper confinement layer 105 in order from bottom to top. A quantum resonator layer 106 is also provided in the semiconductor laser element. The quantum resonator layer 106 is provided between the lower confinement layer 101 and the lower waveguide layer 102.

[0034] In this embodiment, the lower confinement layer 101, the lower waveguide layer 102 and the quantum resonator layer 106 all have Philips ionization degree distribution characteristics, and the Philips ionization degrees in the lower confinement layer 101, the lower waveguide layer 102 and the quantum resonator layer 106 have the following relationship:

[0035] The Philips ionization degree of the lower waveguide layer 102 ≥ the Philips ionization degree of the quantum resonator layer 106 ≥ the Philips ionization degree of the lower confinement layer 101 .

[0036] Furthermore, this embodiment also designs the Philips ionization degree distribution of the quantum resonator layer 106, which is specifically manifested as follows:

[0037] The Philips ionization degree of the quantum resonator layer 106 has the function y1=A+B*e x / cosx is the third quadrant curve distribution, where x is the depth of the quantum resonator layer 106 toward the waveguide layer 102 .

[0038] In this embodiment, a quantum resonator layer is arranged between the lower confinement layer and the lower waveguide layer of the semiconductor laser element, and the Philips ionization degree distribution in the quantum resonator layer and the relationship between the Philips ionization degrees among the lower confinement layer, the lower waveguide layer and the quantum resonator layer are designed, so that the quantum resonator layer enhances the combination of excitons and photons to form a polariton with quantized resonant frequency oscillation, namely a quantum resonator. The quantum resonator has lower optical loss and longer optical propagation distance, thereby extending the life of laser light quanta.

[0039] In some optional embodiments, the lower confinement layer 101, the lower waveguide layer 102 and the quantum resonator layer 106 also have a peak electron drift rate distribution characteristic, and the peak electron drift rates in the lower confinement layer 101, the lower waveguide layer 102 and the quantum resonator layer 106 have the following relationship:

[0040] The peak electron drift velocity of the lower waveguide layer 102 ≥ the peak electron drift velocity of the quantum resonator layer 106 ≥ the peak electron drift velocity of the lower confinement layer 101 .

[0041] Furthermore, this embodiment also designs the peak electron drift rate distribution of the quantum resonator layer 106, which is specifically shown as follows:

[0042] The peak electron drift velocity of the quantum resonator layer 106 has a fourth quadrant curve distribution of the function y2=C+D*x / lnx.

[0043] In this embodiment, a quantum resonator layer is arranged between the lower confinement layer and the lower waveguide layer of the semiconductor laser element, and the peak electron drift rate distribution in the quantum resonator layer and the relationship between the peak electron drift rates among the lower confinement layer, the lower waveguide layer and the quantum resonator layer are designed to reduce electron leakage, improve carrier localization, and improve hole transport efficiency.

[0044] In some optional embodiments, the lower confinement layer 101, the lower waveguide layer 102 and the quantum resonator layer 106 also have a radiation recombination coefficient distribution characteristic, and the radiation recombination coefficients in the lower confinement layer 101, the lower waveguide layer 102 and the quantum resonator layer 106 have the following relationship:

[0045] The radiation recombination coefficient of the lower waveguide layer 102 ≥ the radiation recombination coefficient of the quantum resonator layer 106 ≥ the radiation recombination coefficient of the lower confinement layer 101 .

[0046] Furthermore, this embodiment also designs the distribution of the radiation recombination coefficient of the quantum resonator layer 106, which is specifically shown as follows:

[0047] The radiation recombination coefficient of the quantum resonator layer 106 has a second four-quadrant curve distribution of the function y3=E+F*cosx / x.

[0048] In this embodiment, a quantum resonator layer is arranged between the lower confinement layer and the lower waveguide layer of the semiconductor laser element, and the distribution of the radiation recombination coefficient in the quantum resonator layer and the relationship between the radiation recombination coefficients among the lower confinement layer, the lower waveguide layer and the quantum resonator layer are designed to enhance the optical waveguide effect of the upper waveguide layer and the lower waveguide layer and reduce the internal light loss.

[0049] In some optional embodiments, the lower confinement layer 101, the lower waveguide layer 102 and the quantum resonator layer 106 also have a valence band effective state density distribution characteristic, and the valence band effective state density in the lower confinement layer 101, the lower waveguide layer 102 and the quantum resonator layer 106 has the following relationship:

[0050] The valence band effective state density of the lower waveguide layer 102 ≥ the valence band effective state density of the quantum resonator layer 106 ≥ the valence band effective state density of the lower confinement layer 101 .

[0051] Furthermore, this embodiment also designs the valence band effective state density distribution of the quantum resonator layer 106, which is specifically manifested as follows:

[0052] The valence band effective state density of the quantum resonator layer 106 has the function y4=G+H*sinx / x 2 The third quadrant curve is distributed, where E≤A≤C≤G.

[0053] In this embodiment, a quantum resonator layer is arranged between the lower confinement layer and the lower waveguide layer of the semiconductor laser element, and the distribution of the valence band effective state density in the quantum resonator layer and the relationship between the valence band effective state density among the lower confinement layer, the lower waveguide layer and the quantum resonator layer are designed. The energy level difference between the ground state and the excited state and the transition dipole moment are regulated to induce the change of the Rabi oscillation frequency in the laser light field to enhance the confinement factor and the peak gain, adjust the surface energy band structure and the internal light field, enhance the quantum confinement effect of the active layer, and improve the optical power and slope efficiency of the laser element.

[0054] In some optional embodiments, the lower confinement layer 101, the lower waveguide layer 102 and the quantum resonator layer 106 also have an In / Al element ratio distribution characteristic, and the In / Al element ratios in the lower confinement layer 101, the lower waveguide layer 102 and the quantum resonator layer 106 have the following relationship:

[0055] The In / Al element ratio of the lower waveguide layer 102 ≥ the In / Al element ratio of the quantum resonator layer 106 ≥ the In / Al element ratio of the lower confinement layer 101 .

[0056] Furthermore, this embodiment also designs the In / Al element ratio distribution of the quantum resonator layer 106, which is specifically shown as follows:

[0057] The In / Al element ratio of the quantum resonator layer 106 has the function y5=J+K*e x / cosx third quadrant curve distribution.

[0058] In some optional embodiments, the lower confinement layer 101, the lower waveguide layer 102 and the quantum resonator layer 106 also have an In / H element ratio distribution characteristic, and the In / H element ratios in the lower confinement layer 101, the lower waveguide layer 102 and the quantum resonator layer 106 have the following relationship:

[0059] The In / H element ratio of the lower waveguide layer 102 ≥ the In / H element ratio of the quantum resonator layer 106 ≥ the In / H element ratio of the lower confinement layer 101 .

[0060] Furthermore, this embodiment also designs the In / H element ratio distribution of the quantum resonator layer 106, which is specifically shown as follows:

[0061] The In / Al element ratio of the quantum resonator layer 106 has the function y6=L+M*sinx / x 2 The third quadrant curve distribution.

[0062] In some optional embodiments, the lower confinement layer 101, the lower waveguide layer 102 and the quantum resonator layer 106 also have an In / C element ratio distribution characteristic, and the In / C element ratios in the lower confinement layer 101, the lower waveguide layer 102 and the quantum resonator layer 106 have the following relationship:

[0063] The In / C element ratio of the lower waveguide layer 102 ≥ the In / C element ratio of the quantum resonator layer 106 ≥ the In / C element ratio of the lower confinement layer 101 .

[0064] Furthermore, this embodiment also designs the In / C element ratio distribution of the quantum resonator layer 106, which is specifically shown as follows:

[0065] The In / C element ratio of the quantum resonator layer 106 has a second four-quadrant curve distribution of the function y7=N+P*cosx / x.

[0066] In some optional embodiments, the lower confinement layer 101, the lower waveguide layer 102 and the quantum resonator layer 106 also have an In / O element ratio distribution characteristic, and the In / O element ratios in the lower confinement layer 101, the lower waveguide layer 102 and the quantum resonator layer 106 have the following relationship:

[0067] The In / O element ratio of the lower waveguide layer 102 ≥ the In / O element ratio of the quantum resonator layer 106 ≥ the In / O element ratio of the lower confinement layer 101 .

[0068] Furthermore, this embodiment also designs the In / O element ratio distribution of the quantum resonator layer 106, which is specifically shown as follows:

[0069] The In / O element ratio of the quantum resonator layer 106 has a fourth quadrant curve distribution of the function y8=Q+R*x / lnx, wherein L≤Q≤N≤J.

[0070] In some optional embodiments, the quantum resonator layer 106 is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice, GaN / AlN superlattice, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, Co3O4, Mn3O4, LaBr2, La2Br5, Sc7Cl 10 , Bi2LiN, any one or any combination, preferably InGaN / GaN heterojunction.

[0071] In some optional embodiments, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3≥m≥1.

[0072] Specifically, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and has a thickness of 10 to 120 angstroms.

[0073] The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

[0074] In some optional embodiments, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0075] In some optional embodiments, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0076] The following table is a parameter comparison between a conventional semiconductor laser element and the semiconductor laser element proposed in this embodiment, including slope efficiency, optical power, and internal optical loss to show the difference between the conventional semiconductor laser element and the semiconductor laser element proposed in this embodiment:

[0077]

[0078] It can be seen that the semiconductor laser element proposed in this embodiment improves the slope efficiency and optical power and reduces the internal optical loss compared with the traditional semiconductor laser element, and has obvious advantages over the traditional semiconductor laser element.

[0079] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A semiconductor laser element, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confinement layer arranged in sequence from bottom to top, characterized in that: A quantum resonator layer is arranged between the lower confinement layer and the lower waveguide layer. The lower confinement layer, the lower waveguide layer and the quantum resonator layer all have Philips ionization degree distribution characteristics, and the Philips ionization degree of the lower waveguide layer is ≥ the Philips ionization degree of the quantum resonator layer ≥ the Philips ionization degree of the lower confinement layer. The Philips ionization degree of the quantum resonator layer has a function y1=A+B*e x / cosx is the third quadrant curve distribution, where x is the depth from the quantum resonator layer to the waveguide layer below.

2. The semiconductor laser element according to claim 1, wherein The lower confinement layer, the lower waveguide layer and the quantum resonator layer all have peak electron drift rate distribution characteristics, and the peak electron drift rate of the lower waveguide layer is ≥ the peak electron drift rate of the quantum resonator layer ≥ the peak electron drift rate of the lower confinement layer, and the peak electron drift rate of the quantum resonator layer has a fourth quadrant curve distribution of the function y2=C+D*x / lnx.

3. The semiconductor laser element according to claim 2, wherein: The lower confinement layer, the lower waveguide layer and the quantum resonator layer all have radiation recombination coefficient distribution characteristics, and the radiation recombination coefficient of the lower waveguide layer ≥ the radiation recombination coefficient of the quantum resonator layer ≥ the radiation recombination coefficient of the lower confinement layer, and the radiation recombination coefficient of the quantum resonator layer has the second four-quadrant curve distribution of the function y3=E+F*cosx / x.

4. The semiconductor laser element according to claim 3, wherein: The lower confinement layer, the lower waveguide layer and the quantum resonator layer all have valence band effective state density distribution characteristics, and the valence band effective state density of the lower waveguide layer ≥ the valence band effective state density of the quantum resonator layer ≥ the valence band effective state density of the lower confinement layer, and the valence band effective state density of the quantum resonator layer has a function y4=G+H*sinx / x 2 The third quadrant curve distribution, and E≤A≤C≤G.

5. The semiconductor laser element according to claim 1, wherein The lower confinement layer, the lower waveguide layer and the quantum resonator layer all have an In / Al element ratio distribution characteristic, and the In / Al element ratio of the lower waveguide layer is ≥ the In / Al element ratio of the quantum resonator layer ≥ the In / Al element ratio of the lower confinement layer, and the In / Al element ratio of the quantum resonator layer has a function y5=J+K*e x / cosx third quadrant curve distribution.

6. The semiconductor laser element according to claim 5, wherein: The lower confinement layer, the lower waveguide layer and the quantum resonator layer all have an In / H element ratio distribution characteristic, and the In / H element ratio of the lower waveguide layer is ≥ the In / H element ratio of the quantum resonator layer ≥ the In / H element ratio of the lower confinement layer, and the In / Al element ratio of the quantum resonator layer has a function y6=L+M*sinx / x 2 The third quadrant curve distribution.

7. The semiconductor laser element according to claim 6, wherein: The lower confinement layer, the lower waveguide layer and the quantum resonator layer all have In / C element ratio distribution characteristics, and the In / C element ratio of the lower waveguide layer is ≥ the In / C element ratio of the quantum resonator layer ≥ the In / C element ratio of the lower confinement layer, and the In / C element ratio of the quantum resonator layer has the second four-quadrant curve distribution of the function y7=N+P*cosx / x.

8. The semiconductor laser device according to claim 7, wherein: The lower confinement layer, the lower waveguide layer and the quantum resonator layer all have an In / O element ratio distribution characteristic, and the In / O element ratio of the lower waveguide layer is ≥ the In / O element ratio of the quantum resonator layer ≥ the In / O element ratio of the lower confinement layer, and the In / O element ratio of the quantum resonator layer has a fourth quadrant curve distribution of the function y8=Q+R*x / lnx, and L≤Q≤N≤J.

9. The semiconductor laser device according to claim 1, wherein: The quantum resonator layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice, GaN / AlN superlattice, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, Co3O4, Mn3O4, LaBr2, La2Br5, Sc7Cl 10 , Bi2LiN or any combination thereof.

10. The semiconductor laser device according to claim 1, wherein The active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN , with a thickness of 10 angstroms to 120 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 angstroms to 200 angstroms; The lower confinement layer, the lower waveguide layer, the upper waveguide layer, and the upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN; The substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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