Bonding device

Abstract

A bonding apparatus for bonding a first object to be bonded and a second object to be bonded using laser light includes a first stage, a pressing mechanism, a second stage, and a laser light source. The first stage is a transmissive stage that transmits laser light, and is positioned on the rear surface side of the first bonding target. The pressurizing mechanism applies pressure to the back surface of the first bonding object. The second stage has a pressure receiving surface that receives the pressure of the pressurizing mechanism on the rear surface side of the second bonding object. The laser light source radiates laser light to a bonding site between the first bonding object and the second bonding object via the first stage. Furthermore, the pressurizing mechanism is a mechanism in which a pressurized transmission medium is composed of a gas or a liquid, and applies pressure to the back surface of the first bonding object in a state in which the transmission medium is brought into contact with the back surface.

Description

Technical Field

[0001] The present invention relates to a bonding technique using a laser. Background Art

[0002] As one of the manufacturing technologies of semiconductor devices (MEMS, etc.), there is a technology for bonding two wafers by using the eutectic reaction of two metals. In this technology, a metal layer mainly composed of one of the two metals that produce eutectic reaction (for example, aluminum (Al) and germanium (Ge)) and a metal layer mainly composed of the other metal are formed on the bonding surfaces of the two wafers. Moreover, by generating a eutectic reaction at the contact parts of these metal layers, the two wafers can be bonded. As an example, this technology is used to seal sensors (gyro sensors, biosensors, etc.), waveguides, etc. in devices.

[0003] In order to generate a eutectic reaction in such a bonding technology, two metal layers need to be brought into contact without a gap, and the contact portion of the metal layers needs to be heated to a temperature at which a eutectic reaction occurs. In addition, conventionally, the two metal layers are brought into contact by clamping and pressing two wafers, and a sensor or the like to be sealed is heated as a whole with the two wafers, thereby heating the contact portion of the two metal layers (for example, see Patent Document 1).

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 11-220141

[0007] Patent Document 2: Chinese Utility Model Specification No. 210223961 Summary of the invention

[0008] Technical problem to be solved by the invention

[0009] However, in the above-mentioned previous bonding technology, because the sensor to be sealed is also heated, there is a problem that the sensor is damaged by heating. Therefore, the sensor that can be sealed in the device is limited to sensors with high heat resistance. In addition, it takes a long time to heat the bonding part (to the temperature at which the eutectic reaction occurs), and after bonding, the thermal stress of the chip needs to be gradually relaxed, so cooling also takes a long time. Therefore, there is a problem that the time required for one bonding process is long.

[0010] As another problem, when the two metals mentioned above are metals with different linear expansion coefficients, there is a problem that deformation occurs at the joining portion of the two metal layers when the temperature rises (heating) or drops (cooling). Therefore, in order to suppress the occurrence of such deformation, in the above-mentioned conventional joining technology, when selecting the two metals, metals with similar linear expansion coefficients need to be selected, and the degree of freedom of selection is significantly limited.

[0011] Therefore, in recent years, a technique for locally heating the contact portion of two metal layers using laser light has been proposed (see Patent Document 2). Specifically, two wafers are clamped and pressed using a quartz plate or other components (suction cups, etc.) that transmit laser light, and in this state, the contact portion of the two metal layers is irradiated with laser light through the quartz plate.

[0012] By adopting such a laser bonding technology, the contact part of the two metal layers is locally heated, so the thermal influence on the sensor can be reduced, and as a result, a sensor with low heat resistance can be sealed in the device. In addition, since the bonding part of the two metal layers can be heated intensively by laser, the temperature of the bonding part can be quickly raised to the temperature at which a eutectic reaction occurs, and as a result, the time required for the bonding process can be shortened. Such a laser bonding technology is not limited to bonding using a eutectic reaction (eutectic bonding), and is effective for various bondings that require local heating, such as solder bonding and welding bonding.

[0013] Furthermore, even if the two metals mentioned above are metals with different linear expansion coefficients and deformation occurs when the temperature rises (heating) or drops (cooling), the deformation occurs only in the local portion irradiated with the laser, so it is obviously a small deformation, and as a result, the influence of the deformation on the joint of the two metal layers is obviously small. Therefore, when selecting two metals, metals with different linear expansion coefficients can be selected, and the degree of freedom of selection increases.

[0014] On the other hand, in the laser bonding technology, there is a problem that the wafer to be bonded is attached to the quartz plate due to the clamping, pressing and heating, and is difficult to be peeled off from the quartz plate. Thus, when the wafer is attached to the quartz plate, there is a problem that the wafer is damaged when being peeled off from the quartz plate.

[0015] Therefore, an object of the present invention is to prevent damage to a joining object in a joining technique using a laser.

[0016] Technical means for solving technical problems

[0017] The joining device of the present invention is a device for joining a first joining object and a second joining object using a laser, and includes a first workbench, a pressurizing mechanism, a second workbench, and a laser light source. The first workbench is a workbench having transmittance for allowing laser light to pass through, and is located on the back side of the first joining object. The pressurizing mechanism is a mechanism capable of applying pressure to the back side of the first joining object. The second workbench has a pressure-bearing surface on the back side of the second joining object that receives the pressure of the pressurizing mechanism. The laser light source irradiates the joining portion of the first joining object and the second joining object with laser light through the first workbench. Moreover, the pressurizing mechanism is a mechanism in which a pressure transmission medium is composed of gas or liquid, and pressure is applied to the back side of the first joining object in a state in which the transmission medium is in contact with the back side of the first joining object.

[0018] According to the above-mentioned bonding device, pressure can be directly applied to the back side of the first bonding object through a pressure transmission medium (gas or liquid), and as a result, pressure can be applied to the back side of the first bonding object in a non-contact state with the first workbench. Therefore, even if laser irradiation is performed, it is possible to avoid the first bonding object from being attached to the first workbench.

[0019] Effects of the Invention

[0020] According to the present invention, it is possible to prevent damage to the objects to be joined in a joining technique using a laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is a conceptual diagram illustrating two objects to be joined by a joining device.

[0022] Figure 2 (A) is a cross-sectional view showing an example of the pattern shapes of the first metal layer and the second metal layer, Figure 2 (B) is a plan view showing this example.

[0023] Figure 3 (A) and Figure 3 (B) is a conceptual diagram showing the bonding device of the first embodiment. Figure 3 (A) shows the state where the second workbench is raised. Figure 3 (B) shows a state where the second stage is lowered.

[0024] Figure 4 This is a conceptual diagram showing a bonding device according to a second embodiment. DETAILED DESCRIPTION

[0025] [1]Joining object

[0026] Figure 11 is a conceptual diagram illustrating two bonding objects 101 and 102 bonded by a bonding device described later. The bonding objects 101 and 102 are, for example, semiconductor wafers, and the first metal layer 201 and the second metal layer 202 are formed on the bonding surfaces 101a and 102a of the two, respectively. Here, the first metal layer 201 is a layer containing one of the two metals that produce a eutectic reaction as a main component, and the second metal layer 202 is a layer containing the other metal as a main component. As a combination of two metals, for example, a combination of aluminum (Al) and germanium (Ge), a combination of copper (Cu) and tin (Sn), a combination of silver (Ag) and tin (Sn), a combination of indium (In) and tin (Sn), etc. can be cited. In addition, their layers are not particularly limited, and are formed by vacuum film formation (including sputtering, evaporation) and coating of metal on the bonding surfaces 101a and 102a.

[0027] Figure 1 The diagram schematically shows a situation in which the first metal layer 201 is formed on the entire area of ​​the bonding surface 101a and the second metal layer 202 is formed on the entire area of ​​the bonding surface 102a. In the actual manufacturing process of semiconductor devices (MEMS, etc.), the first metal layer 201 and the second metal layer 202 are patterned into various shapes according to the shape, purpose, etc. of the device. Figure 2 (A) and Figure 2 (B) is a cross-sectional view and a top view showing an example of the pattern shape of the first metal layer 201 and the second metal layer 202. Figure 2 (B) shows a top view of only the second metal layer 202 of the first metal layer 201 and the second metal layer 202. In this example, the first metal layer 201 and the second metal layer 202 are formed into a quadrilateral frame shape surrounding each sensor 103 so that each sensor 103 can be sealed in the device. The pattern shape of the first metal layer 201 and the second metal layer 202 is not limited to a quadrilateral frame shape, and can be appropriately changed according to the shape and purpose of the device.

[0028] Moreover, the bonding device described below is a device that utilizes a eutectic reaction (i.e., eutectic bonding using laser) produced by heating the contact portion of the first metal layer 201 and the second metal layer 202 (the bonding portion of the bonding object 101 and the bonding object 102) using a laser to bond these metal layers, thereby bonding the bonding surfaces 101a and 102a of the two bonding objects 101 and 102 to each other.

[0029] [2]Joining device

[0030] [2-1] First Embodiment

[0031] Figure 3 (A) and Figure 3(B) is a conceptual diagram showing the bonding apparatus of the first embodiment. As shown in these figures, the bonding apparatus of this embodiment includes a chamber mechanism 1, a sealing mechanism 2, a pressurizing mechanism 3, a laser light source 4, and a control unit 5. The structure of each part will be described in detail below.

[0032] <Chamber mechanism 1>

[0033] The chamber mechanism 1 includes a first chamber configuration section 11 , a second chamber configuration section 12 , and a drive section 13 that drives at least one of them.

[0034] The first chamber component 11 and the second chamber component 12 constitute a closed space (hereinafter referred to as "chamber 10") for performing bonding processing, and are configured to selectively form and open the chamber 10 by relatively moving closer and further apart in the vertical direction. A more specific structure is as follows.

[0035] The first chamber forming part 11 is composed of a first cylindrical part 111 and a first worktable 112 supported on the inner side of the first cylindrical part 111 without a gap therebetween. The first cylindrical part 111 is arranged in a state where the central axis direction thereof coincides with the vertical direction, and the first worktable 112 is supported horizontally by the first cylindrical part 111. Here, the first worktable 112 is a worktable having a transmittance for transmitting laser light, and is formed of, for example, quartz.

[0036] The second chamber forming part 12 is composed of a second cylindrical part 121, a second workbench 122 and a driving part 123, wherein the second cylindrical part 121 is arranged above the first cylindrical part 111 and coaxially with the first cylindrical part 111, the second workbench 122 is supported on the inner side of the second cylindrical part 121 without a gap and can move up and down, and the driving part 123 can move the second workbench 122 up and down. Moreover, by the upper end of the first cylindrical part 111 and the lower end of the second cylindrical part 121 being in contact with each other without a gap, the chamber 10 can be formed between the first workbench 112 and the second workbench 122. In addition, in Figure 3 (A) shows the state where the second workbench 122 is raised. Figure 3 (B) shows a state where the second stage 122 is lowered.

[0037] In this way, the chamber mechanism 1 is a mechanism that can form the chamber 10 between the first stage 112 and the second stage 122 .

[0038] In addition, the second workbench 122 is a workbench having a function of adsorbing the bonding object. Specifically, the second workbench 122 is a workbench having an adsorption surface 122a for adsorbing the back surface 101b of the bonding object 101 or the back surface 102b of the bonding object 102. As an example, the adsorption surface 122a is composed of a flat surface having adsorption grooves formed in the entire area so that the internal pressure can be reduced by vacuum suction or the like.

[0039] In the present embodiment, the two joining objects 101 and 102 are temporarily joined by adsorbing the back surface of either of the joining objects to the adsorption surface 122a, and are adsorbed by the second workbench 122. In the present embodiment, in the following description, the joining object 101 and 102 adsorbed by the second workbench 122 that is farther from the second workbench 122 is referred to as the "first joining object", and the joining object that is closer to the second workbench 122 is referred to as the "second joining object". Figure 3 (A) and Figure 3 In the example of (B), the joining objects 101 and 102 are adsorbed on the second workbench 122 in a manner that the joining object 102 is at the bottom, so the joining object 102 is equivalent to the "first joining object" and the joining object 101 is equivalent to the "second joining object". Therefore, the first workbench 112 is located on the back side of the first joining object, and the second workbench 122 is located on the back side of the second joining object.

[0040] Furthermore, the back side (at the bottom) of the first joining object is pressed by the pressurizing mechanism 3 described later. Figure 3 (A) and Figure 3 In the example of (B), when pressure is applied to the back surface 102b of the bonding object 102, the second worktable 122 is pressed against the back surface (at the bottom) of the second bonding object. Figure 3 (A) and Figure 3 In the example of (B), the pressure is received on the back surface 101b) of the bonding object 101. Specifically, the suction surface 122a of the second stage 122 functions as a pressure receiving surface for receiving the pressure of the pressurizing mechanism 3.

[0041] The driving unit 13 moves at least one of the first chamber constituent unit 11 and the second chamber constituent unit 12 in the vertical direction to move these constituent units closer to or farther from each other.

[0042] <Sealing mechanism 2>

[0043] The sealing mechanism 2 is a mechanism for dividing the space in the chamber 10 into a plurality of regions and sealing the spaces between adjacent regions (see Figure 3(B)). Specifically, the sealing mechanism 2 divides the space in the chamber 10 into a first region R1 facing the back surface 102b (back surface of the first bonding object) of the bonding object 102 and a second region R2 adjacent to the first region R1, and seals the regions. A more specific structure is as follows.

[0044] The sealing mechanism 2 is composed of a flange portion 21 and a sealing portion 22. Here, the flange portion 21 is an annular portion that protrudes from a position on the upper side of the inner surface of the first cylindrical portion 111 that is higher than the first worktable 112 (i.e., a position close to the second cylindrical portion 121) toward the center axis of the first cylindrical portion 111, and extends to a position overlapping with the peripheral portions of the bonding objects 101 and 102 adsorbed by the second worktable 122 when viewed from vertically below. In addition, the sealing portion 22 is an annular sealing member (O-ring, etc.), and is provided on the upper surface of the front end portion of the flange portion 21 in a manner that is opposed to the peripheral portions of the bonding objects 101 and 102 adsorbed by the second worktable 122 in a full circle.

[0045] With such a sealing mechanism 2, when the second workbench 122 is lowered, the sealing portion 22 contacts the peripheral portions of the bonding objects 101 and 102 adsorbed by the second workbench 122 from below in a full circle. As a result, the peripheral portions of the bonding objects 101 and 102 are sandwiched between the adsorption surface 122a (pressure-bearing surface) of the second workbench 122 and the sealing portion 22 in a full circle. As a result, the space between the back surface 102b of the bonding object 102 (the back surface of the first bonding object) and the first workbench 112 is defined as the first region R1, and the space between the first region R1 and the second region R2 is sealed by the sealing mechanism 2.

[0046] Furthermore, in the present embodiment, the width of the first region R1 in the vertical direction (i.e., the width between the back surface 102b of the joining object 102 (the back surface of the first joining object) and the first workbench 112) is set to be larger than the wavelength of the laser used for joining, preferably set to be approximately 10 times or more of the wavelength. The reason for such setting will be described later.

[0047] <Pressure mechanism 3>

[0048] The pressurizing mechanism 3 is a device for applying pressure to the back side of the first bonding object (at Figure 3 (A) and Figure 3 In the example of (B), it is a mechanism for applying pressure to the back side 102b) of the bonding object 102. Specifically, the pressurizing mechanism 3 is a mechanism in which the pressure transmitting medium 31 is composed of gas or liquid, and pressure is applied to the back side of the first bonding object while the transmitting medium 31 is in contact with the back side of the first bonding object. A more specific structure is as follows.

[0049] The pressurizing mechanism 3 can adjust the internal pressure of each region formed by dividing the chamber 10 by the sealing mechanism 2, can reduce the pressure in each region, and can pressurize the first region R1 through the transmission medium 31. The pressurization of the first region R1 can be achieved by, for example, supplying the transmission medium 31 (gas or liquid) to the first region R1 through a compression pump. In addition, the pressurizing mechanism 3 makes the internal pressure of the first region R1 higher than the internal pressure of the second region R2, and uses the difference between the two to apply pressure to the back surface of the first bonding object.

[0050] <Laser light source 4>

[0051] The laser light source 4 is a portion that emits laser light, and is disposed below the first workbench 112 that has transmissive properties for transmitting laser light. In addition, the laser light source 4 can irradiate the laser light to the bonding objects 101 and 102 held above the first workbench 112 via the first region R1, while scanning the laser light in a horizontal plane along the pattern shape of the first metal layer 201 and the second metal layer 202. Furthermore, the laser light source 4 can focus the laser light on the contact portion between the first metal layer 201 and the second metal layer 202 (the bonding portion between the bonding objects 101 and 102).

[0052] <Control unit 5>

[0053] The control unit 5 is composed of a processing device such as a CPU or a microcomputer, and controls each operating unit (the chamber mechanism 1, the pressurizing mechanism 3, the laser light source 4, etc.) included in the bonding apparatus. The specific structure is as follows.

[0054] When performing the bonding process, the control unit 5 first separates the first chamber component 11 and the second chamber component 12 to open the chamber 10, and in this state, the temporarily bonded bonding objects 101 and 102 are adsorbed on the adsorption surface 122a of the second workbench 122. Thereafter, the control unit 5 brings the first chamber component 11 and the second chamber component 12 closer together to form the chamber 10 (see Figure 3 (A) At this time, the control unit 5 raises the second stage 122 so that the objects to be joined 101 and 102 are separated from the sealing unit 22 (that is, the seal between the first region R1 and the second region R2 is released).

[0055] Next, the control unit 5 controls the pressurizing mechanism 3 to reduce the internal pressure of the entire chamber 10 until the chamber 10 is in a vacuum state. At this time, the peripheral portions of the joining objects 101 and 102 are not sandwiched between the adsorption surface 122a (pressure-bearing surface) of the second workbench 122 and the sealing portion 22 and are open (i.e., from sealed to open), so the airflow passing through the peripheral portions between the joining objects 101 and 102 is not cut off, so that when there is a gap between the joining objects 101 and 102, the internal pressure of the gap can be reduced. On the other hand, when the peripheral portions of the joining objects 101 and 102 are sandwiched between the adsorption surface 122a (pressure-bearing surface) of the second workbench 122 and the sealing portion 22 (i.e., sealed), the airflow is cut off, so even if there is a gap between the joining objects 101 and 102, it is difficult to reduce the internal pressure of the gap.

[0056] Then, the control unit 5 lowers the second workbench 122 so that the sealing unit 22 abuts against the peripheral edge of the bonding objects 101 and 102 adsorbed by the second workbench 122 from below over the entire circumference (see Figure 3 (B)). Thus, the peripheral edge portions of the objects to be joined 101 and 102 are sandwiched entirely between the suction surface 122a (pressure receiving surface) of the second stage 122 and the sealing portion 22. As a result, the first region R1 and the second region R2 can be formed and sealed therebetween.

[0057] In this state, the control unit 5 controls the pressurizing mechanism 3 to maintain the internal pressure of the first region R1 in the vacuum state while the second region R2 is maintained. As a result, the internal pressure of the first region R1 becomes higher than the internal pressure of the second region R2, and a pressure corresponding to the difference between them is applied to the back side 102b of the bonding object 102 (the back side of the first bonding object). At this time, by changing the internal pressure of the first region R1, the pressure applied to the back side 102b of the bonding object 102 can be changed to a desired value. In addition, if the internal pressure of the first region R1 is a value higher than the internal pressure of the second region R2, it can be set to a value lower than the atmospheric pressure, can be set to a value of the same degree as the atmospheric pressure, or can be set to a value higher than the atmospheric pressure.

[0058] After the back surface 102b of the bonding object 102 (the back surface of the first bonding object) is pressurized by the pressurizing mechanism 3, the control unit 5 controls the laser light source 4 while maintaining this state, and irradiates the contact portion between the first metal layer 201 and the second metal layer 202 (the bonding portion between the bonding object 101 and the bonding object 102) with laser light through the first workbench 112. In addition, the control unit 5 scans the laser light in the horizontal plane along the pattern shape of the first metal layer 201 and the second metal layer 202. Thus, the first metal layer 201 and the second metal layer 202 can be bonded to each other by eutectic bonding over the entire area of ​​the bonding objects 101 and 102. In this way, the bonding surfaces 101a and 102a of the two bonding objects 101 and 102 are bonded to each other.

[0059] In such a bonding device, the first region R1 is a region filled with a pressure transmitting medium 31 (gas or liquid), and the back side 102b of the bonding object 102 (the back side of the first bonding object) is exposed in the first region R1. Therefore, the back side 102b of the bonding object 102 (the back side of the first bonding object) is directly in contact with the pressure transmitting medium 31 (gas or liquid), and is therefore directly pressed by the transmitting medium 31 when pressurized. In this way, using the above-mentioned bonding device, the pressure transmitting medium 31 (gas or liquid) can directly pressurize the back side 102b of the bonding object 102 (the back side of the first bonding object), and as a result, the back side 102b of the bonding object 102 (the back side of the first bonding object) can be pressurized in a non-contact state with the first workbench 112. Therefore, even after the irradiation of the laser, it is possible to avoid the bonding object 102 (the first bonding object) from being attached to the first workbench 112. As a result, damage to the bonding object can be prevented in the bonding technology using the laser.

[0060] In addition, by directly applying pressure using a pressure transmitting medium 31 (gas or liquid), it is possible to always apply uniform pressure to the back side 102b (the back side of the first joining object) of the joining object 102. Therefore, even if the pressure is relatively small, the joining object 102 (the first joining object) can be deformed in such a way that the first metal layer 201 and the second metal layer 202 are directly connected without a gap and this state can be maintained. Thus, even with relatively small pressure, the first metal layer 201 and the second metal layer 202 can be in contact without a gap over a large range. In addition, by making the pressure required for joining small in this way, the strength required for the first workbench 112 (the strength that can withstand the pressure during joining) is correspondingly reduced, and as a result, the thickness of the first workbench 112 can be made relatively small.

[0061] Furthermore, when liquid is used as the transfer medium 31 and the first region R1 is filled with the liquid, the liquid can be used to remove the heat generated during the bonding process (laser irradiation) and reduce the difference in refractive index between the first workbench 112 and the first region R1 to reduce the energy loss of the laser.

[0062] Furthermore, in the present embodiment, as described above, the width of the first region R1 in the vertical direction (i.e., the width of the space between the back surface 102b of the joining object 102 (the back surface of the first joining object) and the first workbench 112 where the transmission medium 31 exists) is set to be larger than the wavelength of the laser used in the joining. Therefore, even if there is a foreign object between the back surface 102b of the joining object 102 (the back surface of the first joining object) and the first workbench 112, and the size of the foreign object is the same as or smaller than the wavelength of the laser, a gap equal to the width of the first region R1 in the vertical direction can be ensured between the back surface 102b of the joining object 102 and the first workbench 112 (i.e., a gap having a width larger than the wavelength of the laser used in the joining). Thus, when the laser is irradiated, the diffraction fringes of the laser and the deformation of the joining object 102 (the first joining object) due to the foreign object can be prevented.

[0063] In addition, the above-mentioned bonding apparatus may further include a positioning mechanism (not shown) for adjusting the positions of the bonding objects 101 and 102 adsorbed on the second workbench 122. As an example, the positioning mechanism can adjust the position of the second workbench 122 by adjusting the position of at least one of the first chamber constituent part 11 and the second chamber constituent part 12 in a horizontal plane.

[0064] In the above-mentioned bonding apparatus, the positional relationship between the first worktable 112 and the second worktable 122 can be changed to an upside-down positional relationship, and the positions of other parts (pressing mechanism 3, laser light source 4, etc.) can be appropriately changed accordingly.

[0065] In addition, the structure of applying pressure to the back side 102b (the back side of the first joining object) of the joining object 102 by using the pressure difference is not limited to the case where the joining portion of the joining object 101 and the joining object 102 is heated by using a laser, and can also be applied to the case where the joining portion is heated by other heating means (for example, the case where the joining objects 101 and 102 are heated as a whole). Therefore, the above-mentioned structure using the pressure difference can be obtained as an invention from this embodiment.

[0066] In the above-mentioned bonding device, the pressurizing mechanism 3 is not limited to a mechanism for applying pressure to the back side of the first bonding object while making gas or liquid (pressure transmission medium 31) contact the back side of the object, but can also be appropriately changed to a structure for applying pressure to the back side of the first bonding object using a transmissive diaphragm that allows laser light to pass through.

[0067] In addition, the above-mentioned bonding device is not limited to formal bonding in which all contact portions of the first metal layer 201 and the second metal layer 202 are bonded by laser, but can also be used for temporary bonding in which only a few contact portions of the first metal layer 201 and the second metal layer 202 are bonded by laser. Here, temporary bonding is a bonding process performed to maintain the positional relationship of the bonding objects 101 and 102 adjusted by the positioning mechanism (not shown) so that they will not collapse due to vibration during transportation.

[0068] [2-2] Second Embodiment

[0069] Figure 4 2 is a conceptual diagram showing a bonding apparatus according to a second embodiment. The bonding apparatus according to this embodiment is obtained by modifying the structures of the chamber mechanism 1 and the laser light source 4 of the bonding apparatus according to the first embodiment as described below.

[0070] In the chamber mechanism 1, the first chamber forming part 11 does not include the first workbench 112. Instead, the first cylindrical part 111 is formed into a bottomed cylindrical shape. In addition, in the present embodiment, the space between the back surface 102b (the back surface of the first bonding object) of the bonding object 102 and the bottom 111a of the first cylindrical part 111 is used as the first region R1.

[0071] In addition, the laser light source 4 is provided in the first region R1. Therefore, in this embodiment, the laser can be directly irradiated to the joining portion of the joining objects 101 and 102 without a stage such as a quartz plate. Therefore, in this embodiment, energy loss can be reduced.

[0072] It should be understood that the description of the above embodiments is illustrative in all aspects and is not intended to limit the present invention. The scope of the present invention is not indicated by the above embodiments but by the claims. Furthermore, the scope of the present invention includes the scope equivalent to the claims and all changes within the scope.

[0073] For example, the above-mentioned bonding apparatus is not limited to bonding utilizing a eutectic reaction (eutectic bonding), and can be applied to various bondings requiring local heating, such as solder bonding, welding bonding, and diffusion bonding.

[0074] Furthermore, according to the above-mentioned embodiment, as an object of the invention, not only the above-mentioned joining device but also a part of the structure of the joining device, a joining method using the joining device, and the like can be obtained.

[0075] Description of Reference Numerals

[0076] 1 Chamber Mechanism

[0077] 2 Sealing mechanism

[0078] 3 Pressurization mechanism

[0079] 4 Laser light source

[0080] 5. Control Unit

[0081] 10 chambers

[0082] 1 ...

[0083] 12Second chamber component

[0084] 13. Drive unit

[0085] 21 Flange

[0086] 22 Sealing part

[0087] 31Transmission medium

[0088] R1 Area 1

[0089] R2 Area 2

[0090] 101, 102 joint objects

[0091] 101a, 102a joint surface

[0092] 101b, 102b back

[0093] 103 Sensors

[0094] 111 First Cylinder

[0095] 111a bottom

[0096] 112 No.1 Workbench

[0097] 121 Second cylinder

[0098] 122 No.2 Workbench

[0099] 122a Adsorption surface (pressure surface)

[0100] 123 drive unit

[0101] 2011st metal layer

[0102] 202 2nd metal layer.

Claims

1. A joining device for joining a first joining object and a second joining object using a laser, the joining device comprising: a first workbench having a transmittance through which the laser can pass, and located on the back side of the first bonding object; a pressurizing mechanism capable of applying pressure to the back surface of the first joining object; a second workbench having a pressure receiving surface receiving the pressure of the pressurizing mechanism on the back side of the second bonding object; and a laser light source for irradiating the laser beam to a joining portion between the first joining object and the second joining object via the first worktable, The pressurizing mechanism is a mechanism in which a pressure transmission medium is composed of gas or liquid, and applies pressure to the back surface of the first bonding object in a state in which the transmission medium is in contact with the back surface.

2. The joining device according to claim 1, further comprising: a chamber mechanism capable of forming a chamber between the first workbench and the second workbench; and A sealing mechanism for dividing the space in the chamber into a plurality of regions and sealing adjacent regions, The plurality of regions include a first region facing the back surface of the first bonding object and a second region adjacent to the first region. The sealing mechanism has a sealing portion capable of sealing the first area and the second area, and the peripheral portions of the first bonding object and the second bonding object are clamped between the sealing portion and the pressure-bearing surface of the second workbench by using the sealing portion, so that the space between the back surface of the first bonding object and the first workbench becomes the first area, and the first area and the second area are sealed. The pressurizing mechanism can adjust the internal pressure of each of the regions, and by making the internal pressure of the first region higher than the internal pressure of the second region, pressure is applied to the back surface of the first bonding target using the difference between the internal pressures.

3. The joining device according to claim 2, Also includes a control unit, The control unit reduces the internal pressure of the chamber before the first region and the second region are sealed. Then, the sealing mechanism is controlled to seal the first region and the second region. Thereafter, the internal pressure of the first region is increased by the pressurizing mechanism.

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