Detection method of semiconductor film

Abstract

The invention provides a detection method of a semiconductor film. According to the detection method, based on the infrared spectrum detection principle, a test piece with films with different preset porosities and dielectric constants is used as a test object, the incidence relation between the area ratio of preset characteristic peaks and the dielectric constants and the porosities is obtained, a dielectric constant equation and a porosity equation are determined, and then in the actual detection process, the detection accuracy is improved. The dielectric constant and the porosity of the porous dielectric film can be quickly obtained according to the equation only by obtaining the area ratio of the preset characteristic peaks of the porous dielectric film. Moreover, the detection method not only can efficiently and accurately detect the dielectric constant and the porosity, but also has no damage and pollution to the material and the structure of the semiconductor film, ensures that the detected semiconductor film can be normally used, and effectively reduces the rejection rate of the semiconductor film.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a method for detecting a semiconductor thin film. Background Art

[0002] In the process of integrated circuit preparation, in order to reduce the RC (resistance and capacitance) delay of the device, a dielectric with a low dielectric constant (k value) is used in the metal interconnect layer. Among them, porous film materials have ultra-low dielectric constants, which can meet the development trend of smaller and smaller device technology nodes. And for the deposition of low-k value porous films, it is necessary to add pore formers during the plasma enhanced chemical vapor deposition (PECVD) process, and then remove the pore formers by ultraviolet curing, thereby leaving nano-sized pores in the film to effectively reduce the k value.

[0003] Since the porosity of the film has a direct impact on the dielectric constant of the material, it is necessary to detect the porosity of the deposited film in the actual process. Among them, porosity refers to the percentage of the pore volume in the material to the total volume of the material in the natural state. At present, the main method for measuring the porosity of the film is the liquid nitrogen method. The liquid nitrogen method obtains the pore volume based on low-temperature nitrogen adsorption, thereby obtaining the porosity, but this method will damage the structure, there are measurement errors, and blind holes cannot be measured. In addition, in the existing process, there are methods of measuring the porosity of the film using a mercury probe tester and calculating the porosity based on the characteristic peak area of ​​the filler based on the infrared spectrum. However, in the process of measuring the porosity of the film using a mercury probe tester, mercury will contact the surface of the silicon wafer and contaminate it, which may easily cause the silicon wafer to be unable to continue to be used, and mercury vapor will cause damage to the human body; and the filler used in the method of calculating the porosity based on the characteristic peak area of ​​the filler based on the infrared spectrum will contaminate the surface of the material, which will also cause the silicon wafer after the test to be unable to continue to be used.

[0004] Therefore, a new detection method is urgently needed to detect the k value and porosity efficiently and non-destructively. Summary of the invention

[0005] The object of the present invention is to provide a method for detecting a semiconductor thin film, so as to solve the problem of how to efficiently and non-destructively detect the k value and porosity of a porous medium layer.

[0006] In order to solve the above technical problems, the present invention provides a method for detecting a semiconductor thin film, comprising:

[0007] Provide multiple test pieces;

[0008] Adjusting the ratio of the deposition materials to form thin films with different preset porosities and dielectric constants on the plurality of test sheets;

[0009] Using infrared spectroscopy to detect each of the films, and respectively obtaining a preset characteristic peak area ratio of each of the films;

[0010] According to the preset characteristic peak area ratios of the respective films and the corresponding preset porosities and dielectric constants, a dielectric constant equation and a porosity equation are obtained.

[0011] Optionally, in the semiconductor thin film detection method, after obtaining the dielectric constant equation and the porosity equation, the semiconductor thin film detection method further includes:

[0012] Providing a silicon wafer, on which a porous dielectric film is formed;

[0013] Using infrared spectroscopy to detect the porous medium membrane, and obtaining a preset characteristic peak area ratio of the porous medium membrane;

[0014] The dielectric constant and porosity of the porous medium membrane are respectively obtained according to the preset characteristic peak area ratio, the dielectric constant equation and the porosity equation.

[0015] Optionally, in the semiconductor thin film detection method, the process of using infrared spectroscopy to detect each of the thin films and respectively obtaining the preset characteristic peak area ratio of each of the thin films includes:

[0016] Using an infrared spectrometer to detect each of the films respectively to obtain an infrared spectrum absorption curve of each of the films;

[0017] Determine at least two preset characteristic peaks according to the infrared spectrum absorption curve corresponding to each of the thin films;

[0018] According to at least two of the preset characteristic peaks, the area ratio of the preset characteristic peaks is obtained.

[0019] Optionally, in the semiconductor thin film detection method, when the number of the preset characteristic peaks is equal to 2, the area ratio of the preset characteristic peaks is obtained according to the two preset characteristic peaks; and,

[0020] When the number of the preset characteristic peaks is greater than 2, the process of obtaining the area ratio of the preset characteristic peaks according to at least two of the preset characteristic peaks includes:

[0021] Obtaining pairwise area ratios of at least two of the preset characteristic peaks;

[0022] The area ratio of the two preset characteristic peaks that have a linear relationship with the dielectric constant and / or the porosity is selected as the area ratio of the preset characteristic peaks.

[0023] Optionally, in the detection method of the semiconductor thin film, the several preset characteristic peaks include: an infrared absorption spectrum characteristic peak Si-CH3 and an infrared absorption spectrum characteristic peak Si-O; and the preset characteristic peak area ratio of the film includes: the ratio of the area of ​​the infrared absorption spectrum characteristic peak Si-CH3 to the area of ​​the infrared absorption spectrum characteristic peak Si-O.

[0024] Optionally, in the semiconductor thin film detection method, the process of obtaining the dielectric constant equation according to the preset characteristic peak area ratio and the corresponding preset dielectric constant of each of the thin films includes:

[0025] Draw a first curve of the dielectric constant and the characteristic peak area ratio according to the obtained preset characteristic peak area ratio and the corresponding preset dielectric constant of each of the films;

[0026] Performing curve fitting on the first curve to obtain a first fitting curve;

[0027] The dielectric constant equation is obtained according to the first fitting curve.

[0028] Optionally, in the semiconductor thin film detection method, the first fitting curve is a linear curve, and the dielectric constant equation includes:

[0029] Y1=A*X+B;

[0030] Wherein, X is the preset characteristic peak area ratio; Y1 is the dielectric constant; A and B are coefficients.

[0031] Optionally, in the semiconductor film detection method, the process of obtaining the porosity equation according to the preset characteristic peak area ratio and the corresponding preset porosity of each of the films includes:

[0032] Draw a second curve of the porosity and the characteristic peak area ratio according to the obtained preset characteristic peak area ratio and the corresponding preset porosity of each of the films;

[0033] Performing curve fitting on the second curve to obtain a second fitting curve;

[0034] The porosity equation is obtained according to the second fitting curve.

[0035] Optionally, in the semiconductor film detection method, the second fitting curve is a linear curve, and the porosity equation includes:

[0036] Y2=C*X+D;

[0037] Wherein, X is the preset characteristic peak area ratio; Y2 is the porosity; C and D are coefficients.

[0038] Optionally, in the semiconductor film detection method, the deposition material includes: DEMS, ATRP and BCHD; and the process of adjusting the ratio of the deposition material to form films with different preset porosities and dielectric constants on the plurality of test pieces includes:

[0039] Adjusting the ratio of DEMS and ATRP to deposit corresponding thin films on the plurality of test sheets respectively;

[0040] Ultraviolet rays are used to cure each of the films to form films with different preset porosities and dielectric constants.

[0041] In summary, the present invention provides a method for detecting semiconductor films. Compared with the prior art, the detection method is based on the infrared spectrum detection principle, using test pieces with different preset porosities and dielectric constants as test objects, obtaining the correlation between the area ratio of the preset characteristic peaks and the dielectric constant and porosity, and determining the dielectric constant equation and the porosity equation, and then in the actual detection process, only the area ratio of the preset characteristic peaks of the porous medium film needs to be obtained, and the dielectric constant and porosity of the porous medium film can be quickly obtained according to the above equation. In addition, the detection method can not only detect the dielectric constant and porosity efficiently and accurately, but also has no damage or pollution to the material and structure of the semiconductor film, ensuring that the semiconductor film can be used normally after detection, and effectively reducing the scrap rate of the semiconductor film. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Those skilled in the art will appreciate that the drawings are provided for a better understanding of the present invention, but do not constitute any limitation on the scope of the present invention.

[0043] Figure 1 It is a flow chart for obtaining the dielectric constant equation and the porosity equation in an embodiment of the present invention.

[0044] Figure 2 It is a specific process flow chart of step 2 in an embodiment of the present invention.

[0045] Figure 3 It is a specific process flow chart of step three in an embodiment of the present invention.

[0046] Figure 4 It is an infrared spectrum absorption curve diagram in the embodiment of the present invention.

[0047] Figure 5 It is a specific process flow chart for obtaining the dielectric constant equation in an embodiment of the present invention.

[0048] Figure 6 It is a first fitting curve diagram of the dielectric constant and the preset characteristic peak area ratio in the embodiment of the present invention.

[0049] Figure 7 It is a specific process flow chart for obtaining the porosity equation in an embodiment of the present invention.

[0050] Figure 8 It is a second fitting curve diagram of the porosity and the preset characteristic peak area ratio in the embodiment of the present invention.

[0051] Fig. 9 It is a flow chart of detecting the dielectric constant and porosity of a porous medium layer in an embodiment of the present invention. DETAILED DESCRIPTION

[0052] In order to make the purpose, advantages and features of the present invention clearer, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In addition, the structure shown in the drawings is often a part of the actual structure. In particular, the emphasis of each drawing is different, and sometimes different proportions are used. It should also be understood that, unless otherwise specified or indicated, the terms "first", "second", "third", etc. in the specification are only used to distinguish between the various components, elements, steps, etc. in the specification, and are not used to represent the logical relationship or sequential relationship between the various components, elements, steps, etc.

[0053] See also Figure 1 This embodiment provides a method for detecting a semiconductor thin film, comprising:

[0054] Step 1 S10: providing a plurality of test pieces;

[0055] Step 2 S20: adjusting the ratio of the deposition materials to form thin films with different preset porosities and dielectric constants on the plurality of test sheets;

[0056] Step 3 S30: using infrared spectroscopy to detect each of the films, and obtaining preset characteristic peak area ratios of each of the films;

[0057] Step 4 S40: Obtaining a dielectric constant equation and a porosity equation according to the preset characteristic peak area ratios of each of the films and the corresponding preset porosity and dielectric constant.

[0058] Based on this, the detection method of the semiconductor film provided in this embodiment is based on the infrared spectroscopy detection principle, using test pieces with films of different preset porosities and dielectric constants as test objects, and obtaining the correlation between the area ratio of the preset characteristic peaks and the dielectric constant and porosity, so as to determine the dielectric constant equation and the porosity equation, so that in the actual detection process, it is only necessary to obtain the area ratio of the preset characteristic peaks of the porous medium membrane, and the dielectric constant and porosity of the porous medium membrane can be calculated efficiently and safely according to the above equations.

[0059] The following is combined with Figures 1 to 9 , specifically describing the semiconductor thin film detection method provided in this embodiment.

[0060] Step 1 S10: providing a plurality of test pieces.

[0061] The test piece is a silicon wafer used for processing technology detection. In order to ensure the accuracy of the test results, the parameters such as the film material, film structure and film thickness of each test piece are kept consistent. Among them, this embodiment does not limit the specific number of the test pieces, and can be three, four, five or six pieces. Exemplarily, this embodiment provides four test pieces, namely a first test piece, a second test piece, a third test piece and a fourth test piece.

[0062] Step 2 S20: adjusting the ratio of the deposition materials to form thin films with different preset porosities and dielectric constants on the plurality of test sheets.

[0063] It should be noted that the film is a porous film with a low k value. Therefore, the material forming the film includes a precursor and a pore former. And preferably, the precursor mainly includes methyl diethoxysilane (DEMS), and the pore former mainly includes terpinene (ATRP) and bicycloheptadiene (BCHD). And, preferably, the film is formed by PECVD deposition. Wherein, adding a pore former during film deposition can obtain a non-porous film layer, but after ultraviolet (UV) irradiation and curing, the pore former will react to generate gas, and leave nano-sized pores inside the film layer, so as to obtain the film with pores, which is conducive to reducing the k value of the film. However, the detection method provided in the present embodiment is intended to obtain the correlation between porosity, dielectric constant and preset characteristic peak area ratio in advance, then only the preset characteristic peak area ratio of the film needs to be obtained, and then the porosity and dielectric constant of the film can be efficiently calculated in combination with the correlation.

[0064] Based on this, this embodiment adjusts the ratio of the deposition materials so that the porosity and dielectric constant of the thin film formed on each of the test pieces are different, thereby obtaining a large amount of test data, which is beneficial to improving the accuracy of the subsequent correlation relationship.

[0065] Therefore, if Figure 2 As shown, the step 2 S20 specifically includes:

[0066] Sub-step 1 S201: adjusting the ratio of DEMS and ATRP to deposit the thin film on the plurality of test pieces respectively.

[0067] Sub-step 2 S202: using ultraviolet rays to cure each of the films to form films with different preset porosities and dielectric constants.

[0068] Exemplarily, the ratios of ATRP to DEMS of the thin films formed on the first test piece, the second test piece, the third test piece, and the fourth test piece are 1.4, 1.6, 1.8, and 2.0, respectively.

[0069] Step three S30: using infrared spectroscopy to detect each of the thin films, and obtaining preset characteristic peak area ratios of each of the thin films respectively.

[0070] It should be noted that infrared spectrum detection is based on the selective absorption of electromagnetic radiation in the infrared light region by a substance. When a sample is irradiated with infrared light of continuously changing frequency, the molecules absorb radiation of certain specific frequencies, and their vibration or rotational motion causes changes in the dipole moment, resulting in the transition of molecular vibration and rotational energy levels from the ground state to the excited state, which weakens the intensity of the transmitted light corresponding to these absorption regions. Therefore, by recording the relationship curve between the percentage transmittance of infrared light and the wave number or wavelength, the infrared spectrum absorption curve is obtained. The infrared spectrum absorption curve contains the molecular structure and chemical bond information of the substance. By analyzing the position and intensity of these characteristic peaks, information on the composition, structure and chemical state of the substance can be obtained.

[0071] Based on this, the film is tested by infrared spectroscopy. Whether it is a through hole or a blind hole, it can be fully characterized by the absorption spectrum; and the irradiation of infrared light does not pollute or damage the film material and structure, so efficient and non-destructive testing of the film can be achieved. Specifically, Figure 3 As shown, the step three S30 includes:

[0072] Sub-step 1 S301: using an infrared spectrometer to detect each of the thin films respectively to obtain an infrared spectrum absorption curve of each of the thin films.

[0073] Exemplarily, the thin films formed on the first test piece, the second test piece, the third test piece and the fourth test piece are sample 1, sample 2, sample 3 and sample 4 respectively, and the infrared spectrum detection can obtain Figure 4 The infrared absorption curve of each sample is shown. And considering that the film is formed by DEMS, ATRP and BCHD deposition, and as long as the precursor is silane, the infrared absorption spectrum characteristic peak Si-CH3 and the infrared absorption spectrum characteristic peak Si-O are obtained. Of course, different materials used to deposit and form thin films will form different infrared absorption spectrum characteristic peaks.

[0074] Sub-step 2 S302: Determine at least two preset characteristic peaks according to the infrared spectrum absorption curve corresponding to each of the thin films.

[0075] Due to the difference in thin film deposition materials, the acquired infrared spectrum absorption curve generally forms at least two preset characteristic peaks, which may be Figure 4 The two characteristic peaks shown may also be three or four, etc.

[0076] Further, according to Figure 4 It can be seen that, in view of the different preset porosities and dielectric constants during the film deposition process, although the infrared spectrum absorption curves of Sample 1, Sample 2, Sample 3 and Sample 4 have similar trends, the areas of their respective preset characteristic peaks are different. Therefore, this example uses the area ratio of the preset characteristic peaks to characterize the size of the porosity and dielectric constant in the film, and the specific process of obtaining the area ratio of the preset characteristic peaks can be found in the following sub-step three S303.

[0077] Sub-step three S303: acquiring the area ratio of the preset characteristic peaks according to at least two of the preset characteristic peaks.

[0078] In order to facilitate the characterization of the correlation between porosity, dielectric constant and preset characteristic peak area ratio, such as Figure 4 As shown, when the number of the preset characteristic peaks in the acquired infrared spectrum absorption curve is equal to 2, the area ratio of the preset characteristic peaks is obtained according to the two preset characteristic peaks. For example, the area ratio of the preset characteristic peaks is the ratio of the area of ​​the infrared absorption spectrum characteristic peak Si-CH3 to the area of ​​the infrared absorption spectrum characteristic peak Si-O. When the number of the preset characteristic peaks is greater than 2, the area ratios of at least two preset characteristic peaks can be obtained first; and then the area ratios of the two preset characteristic peaks that have a linear relationship with the dielectric constant and / or the porosity are selected as the area ratio of the preset characteristic peaks. For example, the acquired infrared spectrum absorption curve forms a first characteristic peak, a second characteristic peak and a third characteristic peak, and then the area ratios of the first characteristic peak to the second characteristic peak, the first characteristic peak to the third characteristic peak, and the second characteristic peak to the third characteristic peak can be calculated first; and then it is determined whether these three area ratios have a linear relationship with the dielectric constant and / or the porosity. Assuming that the area ratio of the first characteristic peak to the second characteristic peak and the area ratio of the first characteristic peak to the third characteristic peak are both linearly related to the dielectric constant and / or the porosity, either one of them can be selected as the area ratio of the preset characteristic peak.

[0079] It should be noted that, depending on the different deposited materials, the area ratio of the characteristic peaks having a nonlinear relationship with the dielectric constant and / or the porosity can also be selected as the area ratio of the preset characteristic peaks. Optionally, the area calculation method of the characteristic peaks generally adopts an integral method, mainly including a rectangular method, a trapezoidal method, and a Simpson method.

[0080] Step 4 S40: Obtaining a dielectric constant equation and a porosity equation according to the preset characteristic peak area ratios of each of the films and the corresponding preset porosity and dielectric constant.

[0081] See also Figure 5 and Figure 6 According to the preset characteristic peak area ratios and the corresponding preset dielectric constants of the respective films, the process of obtaining the dielectric constant equation includes:

[0082] Sub-step 1 S401: drawing a first curve of the dielectric constant and the characteristic peak area ratio according to the obtained preset characteristic peak area ratio and the corresponding preset dielectric constant of each of the thin films.

[0083] Sub-step 2 S402: performing curve fitting on the first curve to obtain a first fitting curve.

[0084] Optionally, a linear fitting is performed on the curve, and the first fitting curve is a linear curve. In other examples, other nonlinear curve fitting may be performed depending on the deposition material.

[0085] Sub-step three S403: obtaining the dielectric constant equation according to the first fitting curve.

[0086] Exemplarily, the dielectric constant equation includes:

[0087] Y1=A*X+B;

[0088] Wherein, X is the preset characteristic peak area ratio; Y1 is the dielectric constant; A and B are constant coefficients.

[0089] Based on this, according to the area ratio of the preset characteristic peaks of sample 1, sample 2, sample 3 and sample 4 and their corresponding preset dielectric constants, the following can be obtained: Figure 6 The dielectric constant equation shown is: Y1 = -1635.7*X+33.087.

[0090] Similarly, see Figure 7 and Figure 8 According to the preset characteristic peak area ratio and the corresponding preset porosity of each of the films, the process of obtaining the porosity equation includes:

[0091] Sub-step 1 S404: drawing a second curve of the porosity and the characteristic peak area ratio according to the obtained preset characteristic peak area ratio and the corresponding preset porosity of each of the films.

[0092] Sub-step 2 S405: performing curve fitting on the second curve to obtain a second fitting curve.

[0093] Optionally, a linear fitting is performed on the curve, and the second fitting curve is a linear curve. In other examples, other nonlinear curve fitting may be performed depending on the deposition material.

[0094] Sub-step three S406: obtaining the porosity equation according to the second fitting curve.

[0095] Exemplarily, the porosity equation includes:

[0096] Y2=C*X+D;

[0097] Wherein, X is the preset characteristic peak area ratio; Y2 is the porosity; C and D are constant coefficients.

[0098] Based on this, according to the area ratio of the preset characteristic peaks of sample 1, sample 2, sample 3 and sample 4 and their corresponding preset porosities, the following can be obtained: Figure 8 The porosity equation shown is: Y2 = 58214*X-1068.4.

[0099] In summary, through step 1 S10 to step 4 S40, the porosity equation and the dielectric constant equation are obtained. That is, the relationship equations between the preset characteristic peak area ratio and the porosity and dielectric constant are obtained. Based on this equation, the porosity and dielectric constant of the film can be determined by only obtaining the preset characteristic peak area ratio of the film. Therefore, when detecting the porosity and dielectric constant of the porous medium film on the silicon wafer, it is only necessary to obtain the preset characteristic peak area ratio through infrared spectroscopy detection, and then according to the above relationship equation, the porosity and dielectric constant of the porous medium film can be obtained safely and efficiently, without contacting the surface of the film layer for detection or forming other material layers for detection. Not only is the detection efficiency high, the detection accuracy is high, and non-destructive detection of the material and structure of the silicon wafer can be achieved, ensuring that the silicon wafer after detection can be used normally, which is conducive to reducing the scrap rate of the silicon wafer.

[0100] Therefore, in the actual process of process testing, Fig. 9 As shown, the semiconductor thin film detection method further includes:

[0101] Step 5 S50: providing a silicon wafer, on which a porous dielectric film is formed.

[0102] Step six S60: using infrared spectroscopy to detect the porous medium membrane, and obtaining a preset characteristic peak area ratio of the porous medium membrane.

[0103] Step seven S70: According to the preset characteristic peak area ratio, the dielectric constant equation and the porosity equation, respectively obtain the dielectric constant and porosity of the porous medium membrane.

[0104] For example, the dielectric constant equation is: Y1=-1635.7*X+33.087; the porosity equation is: Y2=58214*X-1068.4; and the area ratio of the infrared absorption spectrum characteristic peak Si-CH3 to the infrared absorption spectrum characteristic peak Si-O obtained by infrared spectroscopy detection is: 0.0189, then the dielectric constant of the porous medium membrane can be efficiently calculated to be approximately: 2.172F / m; the porosity is approximately: 31.845%.

[0105] In summary, the semiconductor film detection method provided in this embodiment is based on the infrared spectrum detection principle. First, multiple test pieces with different preset porosities and dielectric constants are used as test objects to obtain the correlation between the area ratio of the preset characteristic peaks and the dielectric constant and porosity, and determine the dielectric constant equation and the porosity equation; then the porous medium film on the silicon wafer is detected by infrared spectroscopy to obtain the area ratio of the preset characteristic peaks of the porous medium film, and the dielectric constant and porosity of the porous medium film can be obtained efficiently and safely by combining the dielectric constant equation and the porosity equation. In addition, the detection method can not only detect the dielectric constant and porosity efficiently and accurately, but also has no damage or pollution to the material and structure of the semiconductor film, ensuring that the semiconductor film can be used normally after detection, effectively reducing the scrap rate of the semiconductor film.

[0106] In addition, it should be recognized that although the present invention has been disclosed as a preferred embodiment, the above embodiment is not intended to limit the present invention. For any technician familiar with the art, without departing from the scope of the technical solution of the present invention, the technical content disclosed above can be used to make many possible changes and modifications to the technical solution of the present invention, or modified into equivalent embodiments of equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiment according to the technical essence of the present invention without departing from the content of the technical solution of the present invention still belongs to the scope of protection of the technical solution of the present invention.

Claims

1. A method for detecting a semiconductor thin film, characterized in that: include: Provide multiple test pieces; Adjusting the ratio of the deposition materials to form thin films with different preset porosities and dielectric constants on the plurality of test sheets; Using infrared spectroscopy to detect each of the films, and respectively obtaining a preset characteristic peak area ratio of each of the films; According to the preset characteristic peak area ratios of the respective films and the corresponding preset porosities and dielectric constants, a dielectric constant equation and a porosity equation are obtained.

2. The method for detecting a semiconductor thin film according to claim 1, characterized in that: After obtaining the dielectric constant equation and the porosity equation, the semiconductor film detection method further includes: Providing a silicon wafer, on which a porous dielectric film is formed; Using infrared spectroscopy to detect the porous medium membrane, and obtaining a preset characteristic peak area ratio of the porous medium membrane; The dielectric constant and porosity of the porous medium membrane are respectively obtained according to the preset characteristic peak area ratio, the dielectric constant equation and the porosity equation.

3. The method for detecting a semiconductor thin film according to claim 1, characterized in that: The process of detecting each of the films by infrared spectroscopy and obtaining the preset characteristic peak area ratio of each of the films comprises: Using an infrared spectrometer to detect each of the films respectively to obtain an infrared spectrum absorption curve of each of the films; Determine at least two preset characteristic peaks according to the infrared spectrum absorption curve corresponding to each of the thin films; According to at least two of the preset characteristic peaks, the area ratio of the preset characteristic peaks is obtained.

4. The method for detecting a semiconductor thin film according to claim 3, characterized in that: When the number of the preset characteristic peaks is equal to 2, obtaining the area ratio of the preset characteristic peaks according to the two preset characteristic peaks; as well as, When the number of the preset characteristic peaks is greater than 2, the process of obtaining the area ratio of the preset characteristic peaks according to at least two of the preset characteristic peaks includes: Obtaining pairwise area ratios of at least two of the preset characteristic peaks; The area ratio of the two preset characteristic peaks that have a linear relationship with the dielectric constant and / or the porosity is selected as the area ratio of the preset characteristic peaks.

5. The method for detecting a semiconductor thin film according to claim 3 or 4, characterized in that: The several preset characteristic peaks include: an infrared absorption spectrum characteristic peak Si-CH3 and an infrared absorption spectrum characteristic peak Si-O; and the preset characteristic peak area ratio of the film includes: the ratio of the area of ​​the infrared absorption spectrum characteristic peak Si-CH3 to the area of ​​the infrared absorption spectrum characteristic peak Si-O.

6. The method for detecting a semiconductor thin film according to claim 1 or 4, characterized in that: According to the preset characteristic peak area ratios and the corresponding preset dielectric constants of the respective films, the process of obtaining the dielectric constant equation includes: Draw a first curve of the dielectric constant and the characteristic peak area ratio according to the obtained preset characteristic peak area ratio and the corresponding preset dielectric constant of each of the films; Performing curve fitting on the first curve to obtain a first fitting curve; The dielectric constant equation is obtained according to the first fitting curve.

7. The method for detecting a semiconductor thin film according to claim 6, characterized in that: The first fitting curve is a linear curve, and the dielectric constant equation includes: Y1=A*X+B; Wherein, X is the preset characteristic peak area ratio; Y1 is the dielectric constant; A and B are coefficients.

8. The method for detecting a semiconductor thin film according to claim 1 or 4, characterized in that: According to the preset characteristic peak area ratios and corresponding preset porosities of the respective films, the process of obtaining the porosity equation includes: Draw a second curve of the porosity and the characteristic peak area ratio according to the obtained preset characteristic peak area ratio and the corresponding preset porosity of each of the films; Performing curve fitting on the second curve to obtain a second fitting curve; The porosity equation is obtained according to the second fitting curve.

9. The method for detecting a semiconductor thin film according to claim 8, characterized in that: The second fitting curve is a linear curve, and the porosity equation includes: Y2=C*X+D; Wherein, X is the preset characteristic peak area ratio; Y2 is the porosity; C and D are coefficients.

10. The method for detecting a semiconductor thin film according to claim 1, characterized in that: The deposition materials include DEMS, ATRP and BCHD; and the process of adjusting the ratio of the deposition materials to form thin films with different preset porosities and dielectric constants on the plurality of test sheets includes: Adjusting the ratio of DEMS and ATRP to deposit corresponding thin films on the plurality of test sheets respectively; Ultraviolet rays are used to cure each of the films to form films with different preset porosities and dielectric constants.

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