Anti-crosstalk high-resolution tactile sensing device and preparation method thereof

Abstract

The invention discloses an anti-crosstalk high-resolution tactile sensing device and a preparation method thereof, relates to the technical field of tactile sensing devices, and aims to solve the problem that the accuracy of the whole sensor is reduced due to the fact that a flexible tactile sensor always faces crosstalk during high-resolution preparation. The bottom gate field effect transistor comprises a bottom gate field effect transistor assembly, the bottom gate field effect transistor assembly comprises a drain electrode, the drain electrode is covered with a passivation layer, a primary battery assembly is further arranged above the passivation layer, and the primary battery assembly is in contact with a source electrode through a channel.

Description

Technical Field

[0001] The present invention relates to the technical field of tactile sensing devices, and in particular to a crosstalk-resistant high-resolution tactile sensing device and a preparation method thereof. Background Art

[0002] Touch is an important sense for humans. With the continuous advancement of science and technology, tactile signals can also be converted into transmittable electrical signals for information collection. Tactile sensors can directly provide relevant information about mechanical interaction, thus playing a key role in the control of dexterous manipulation. As a realization of simulated regenerative tactile function, high-resolution flexible tactile sensors have received widespread attention, and the research direction is more inclined towards flexibility, array and precision.

[0003] The importance of tactile afferent signals in operational tasks is most evident in people with impaired digital sensitivity, who have difficulty completing daily tasks even with visual guidance. This requires the preparation of human skin bionic sensors that can meet the tactile requirements of monitoring physical interaction processes, namely electronic skin. Electronic skin is crucial for sensing human-machine environment interactions and is used in advanced collaborative anthropomorphic robots and neural prostheses. Flexible artificial electronic skin integrated with flexible tactile sensors has great potential for reconstructing the human tactile system, allowing users to perceive and grip objects more naturally. Tactile sensors convert tactile signals from external stimuli into electrical signals in a signal transduction manner, playing a key role in the field of wearable medicine, including auxiliary diagnosis and treatment, health management, disease prevention / risk monitoring, virtual assistance, etc.

[0004] Touch is the key sense that provides subtle information that vision cannot capture during physical interactions. Preparing high-resolution flexible tactile sensors is a key step in simulating touch. However, existing flexible tactile sensors often face the problem of crosstalk when preparing high resolution, which reduces the accuracy of the entire sensor and limits its application. Summary of the invention

[0005] The present invention proposes an anti-crosstalk high-resolution tactile sensing device, which includes a bottom-gate field effect transistor assembly, wherein the bottom-gate field effect transistor assembly includes a drain and a source, the drain is covered with a passivation layer, and a primary battery assembly is also arranged above the passivation layer, and the primary battery assembly is in contact with the source through a channel.

[0006] The present invention is further configured as follows: the bottom-gate field effect transistor assembly further includes a flexible substrate, a gate, a gate dielectric and a semiconductor active layer from bottom to top, the drain is arranged on the semiconductor active layer, the source is arranged on the semiconductor active layer, and the source and the drain are respectively arranged on two long sides of the semiconductor active layer.

[0007] The present invention is further configured as follows: the primary battery assembly includes an active electrode complex, an electrolyte and an inert electrode complex in order from bottom to top, and the active electrode complex is in contact with the source electrode through a channel.

[0008] The present invention also proposes a method for preparing a crosstalk-resistant high-resolution tactile sensing device as described in any one of the above, which comprises the following steps: S1: preparing a flexible polymer material film on a silicon substrate by a spin coating process to serve as the flexible substrate; S2: performing a photolithography process on the flexible substrate, and then preparing a gate by metal deposition, performing atomic layer deposition on the gate to grow a gate dielectric and a semiconductor active layer, performing a photolithography process again on the semiconductor active layer, and then performing metal deposition again to prepare the source and the drain; S3: performing atomic layer deposition on the drain electrode to grow a passivation layer, and using a pad photolithography process to make the source electrode directly contact the active electrode complex; S4: On the basis of the passivation layer on the source electrode and the drain electrode, an active conductive film, a nanoparticle film, an ion conductive electrolyte film, a nanoparticle film and an inert conductive film are sequentially inkjet-printed from top to bottom.

[0009] The present invention is further configured as follows: the size of the silicon substrate is 3 inches, the flexible substrate is made of polyimide, polyvinyl alcohol or polyurethane organic polymer material, and has a thickness of 50 μm.

[0010] The present invention is further configured as follows: the gate electrode, the drain electrode and the source electrode are made of Ti and Au with high flexibility and high conductivity, and the thickness of the prepared gate electrode, the drain electrode and the source electrode is 50 nm.

[0011] The present invention is further configured as follows: the material selected for the gate dielectric is any one or a combination of oxide Al2O3 and HfO2, and the semiconductor active layer is selected from one of MoS2 with flexible semiconductor properties and high-concentration SWCNTS.

[0012] The present invention is further configured as follows: the semiconductor active body channel formed between the drain and the source has a length of 100 μm and a width of 8 μm.

[0013] The present invention is further configured as follows: the passivation layer is made of insulating Al2O2 and has a thickness of 20 nm.

[0014] The present invention is further configured as follows: the nanoparticle film printed by inkjet printing is a mesh structure with gaps, and forms a Sohu inert electrode complex and an active electrode complex with the active conductive film and the inert conductive film respectively; wherein the material selected for preparing the active conductive film is MXene, the material selected for the inert conductive film is CNT, the material selected for the nanoparticle film is SiO2, and the material selected for the ion conductive electrolyte film is PVA; the ink concentration used for inkjet printing is 0.4 mg / ml; the thickness of the primary battery structure is 300-500 μm.

[0015] The beneficial effects of the present invention are:

[0016] 1. By using flexible polymer materials to prepare the substrate, the tactile sensing device is made flexible as a whole, so it can adapt to different wearing needs and has stronger applicability.

[0017] 2. It is proposed to use the upper sensor device to give full play to the function of the battery, so that no power consumption is generated in the standby state, the power consumption generated during operation is lower, and it has higher sensitivity.

[0018] 3. By utilizing the individual control of the lower-layer field-effect transistor components and playing a sensing role, the tactile sensing device can have good anti-crosstalk and high precision. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 A schematic diagram of a structural model of a plurality of tactile sensing devices of the present invention after being arranged is shown.

[0020] Figure 2 A schematic diagram of the structure of a single tactile sensing device is shown.

[0021] Figure 3 The production flow chart of the present invention is shown.

[0022] Figure 4 A circuit diagram showing the operation of the present invention.

[0023] Figure 5 The voltage versus pressure response curve of a galvanic cell assembly is shown.

[0024] Figure numerals: 1. inert electrode complex; 2. electrolyte; 3. active electrode complex; 4. passivation layer; 5. drain; 6. source; 7. semiconductor active layer; 8. gate dielectric; 9. gate; 10. flexible substrate. DETAILED DESCRIPTION

[0025] Those skilled in the art can refer to the content of this article and appropriately improve the process parameters. It is particularly important to point out that all similar replacements and modifications are obvious to those skilled in the art, and they are all considered to be included in the present invention. The methods and applications of the present invention have been described through preferred embodiments, and relevant personnel can modify or appropriately change and combine the methods and applications described herein without departing from the content, spirit and scope of the present invention to implement and apply the technology of the present invention.

[0026] Example 1

[0027] The present embodiment proposes a crosstalk-resistant high-resolution tactile sensing device, including a bottom-gate field effect transistor assembly, the bottom-gate field effect assembly including a drain 5 and a source 6, the drain 5 is covered with a passivation layer 4, and a primary battery assembly is also arranged above the passivation layer 4; a channel is also arranged on the passivation layer 4, and the primary battery assembly is in contact with the source 6 through the channel.

[0028] The bottom-gate field effect transistor assembly also includes, from bottom to top, a fixedly arranged flexible substrate 10, a gate 9, a gate dielectric 8 and a semiconductor active layer 7, a drain 5 fixedly mounted on the semiconductor active layer 7, a source 6 fixedly mounted on the semiconductor active layer 7, and the source 6 and the drain 5 are respectively arranged on the two long sides of the semiconductor active body.

[0029] The primary battery assembly includes, from bottom to top, a fixedly arranged active electrode complex 3, an electrolyte 2, and an inert electrode complex 1, wherein the active electrode complex 3 is in contact with the source electrode 6 through a channel.

[0030] It should be noted that the above is a single tactile sensing device. When in use, multiple tactile sensing devices need to be arranged periodically and repeatedly for use, and then arranged into a high-resolution array.

[0031] Example 2

[0032] This embodiment proposes a method for preparing a crosstalk-resistant high-resolution tactile sensing device as described in Embodiment 1, comprising the following steps:

[0033] S1: preparing a flexible polymer material film on a silicon substrate by using a spin coating process to serve as the flexible substrate 10 .

[0034] S2: performing a photolithography process on the flexible substrate, and then preparing a gate 9 by metal deposition, performing atomic layer deposition on the gate 9 to grow a gate dielectric 8 and a semiconductor active layer 7, performing a photolithography process again on the semiconductor active layer 7, and then performing metal deposition again to prepare the source 6 and the drain 5.

[0035] S3: Atomic layer deposition is performed on the drain electrode 5 to grow a passivation layer 4, and a pad photolithography process is used to make the source electrode 6 directly contact the active electrode complex 3.

[0036] S4: On the basis of the passivation layer 4 on the source electrode 6 and the drain electrode 5, an active conductive film, a nanoparticle film, an ion conductive electrolyte 2 film, a nanoparticle film and an inert conductive film are sequentially inkjet printed from top to bottom.

[0037] In step S1 , a 3-inch silicon substrate is selected, and the flexible substrate 10 is made of polyimide, polyvinyl alcohol or polyurethane organic polymer material with a thickness of 50 μm.

[0038] The gate 9, drain 5 and source 6 are made of Ti and Au with high flexibility and high conductivity. The thickness of the prepared gate 9, drain 5 and source 6 is 50nm. The three are arranged in a two-layer structure, with the upper layer being Au and the lower layer being Ti.

[0039] The material of the gate dielectric 8 is any one of oxide Al 2O 3 and HfO 2 or a combination of the two, and the semiconductor active layer 7 is made of one of MoS 2 with flexible semiconductor properties and high-concentration SWCNTS.

[0040] The semiconductor active body channel formed between the drain electrode 5 and the source electrode 6 has a length of 100 μm and a width of 8 μm.

[0041] The passivation layer 4 is made of insulating Al 2 O 3 and has a thickness of 20 nm.

[0042] The nanoparticle film printed by inkjet in step S4 is a mesh structure with gaps, which forms an inert electrode complex 1 and an active electrode complex 3 with the active conductive film and the inert conductive film respectively; the material used to prepare the active conductive film is MXene, the material used to prepare the inert conductive film is CNT, the material used to prepare the nanoparticle film is SiO2, and the material used to prepare the ion conductive electrolyte 2 film is PVA; the ink concentration used for inkjet printing is 0.4 mg / ml; the thickness of the primary battery structure is 300-500 μm.

[0043] The specific production process of bottom-gate field-effect components is illustrated by example:

[0044] S1: The polyimide curing agent is evenly spin-coated on a 3-inch silicon substrate, and then cured by raising the ambient temperature from 50°C to 250°C. After curing, the ambient temperature is maintained at 250°C for 2 hours.

[0045] S2: The gate 9 and 32 gate 9 lines are drawn on the polyimide by photolithography and metal deposition; the gate dielectric 8 is grown by atomic layer deposition of 40nmAl2O3 and 10nmHfO2 at 200°C; the highly purified AWCNTS is deposited as the semiconductor active layer 7 by the standard lift-off coating method.

[0046] The source 6, drain 5 contacts and 32 drain 5 lines were defined by photolithography of 15nm Ti and electron beam evaporation of 35nm Au. Then photolithography and oxygen plasma etching were used to define a channel with a length of 100μm and a width of 8μm.

[0047] S3: Then, a 20 nm thick Al 2O 3 passivation layer 4 is deposited by atomic layer deposition technology at an ambient temperature of 150° C. The Al 2O 3 passivation layer 4 is photolithographically formed through the pad opening to form a channel on each source electrode 6 .

[0048] The specific production process of the original battery assembly is illustrated by example:

[0049] S4: On the basis of the passivation layer 4 and the source electrode 6, 0.4 mg / ml MXene solution is inkjet printed, and SiO2 is sprayed. After cooling, a 100 μm active electrode and nanoparticle complex is formed; the PVA electrolyte 2 film is covered, and then SiO2 is sprayed, and 0.4 mg / ml CNT solution is inkjet printed to form a 100 μm inert electrode complex 1.

[0050] When there is no external pressure on the upper primary battery assembly, the inert electrode complex 1 and the active electrode complex 3 cannot transmit ions through the middle electrolyte 2 due to the barrier of the nanoparticles, thereby outputting voltage; when there is external pressure, the inert electrode complex 1 and the active electrode complex 3 will pass through the channel of the nanoparticle film and transmit ions through the middle electrolyte 2, thereby outputting voltage.

[0051] It should be noted that the gate 9 of the bottom-gate field-effect transistor assembly of the lower layer is connected to a fixed voltage of 3V. When there is external pressure, the upper-layer primary battery assembly provides a source 6 terminal voltage for the bottom-gate field-effect assembly of the lower layer. When the voltage of the primary battery assembly exceeds the threshold voltage of the bottom-gate field-effect transistor assembly, the bottom-gate field-effect transistor assembly is turned on, and the electrical signal of the primary battery can be collected at the drain 5 terminal and converted into the magnitude of the pressure.

[0052] In summary, the present invention uses flexible polymer materials to prepare the substrate, so that the tactile sensing device is flexible as a whole, and can adapt to different wearing needs, and has stronger applicability. It is proposed to use the upper sensor device to play the role of the battery, so that no power consumption is generated in the standby state, the power consumption generated during operation is lower, and it has higher sensitivity. By using the individual control of the lower field effect tube component and playing the sensing role, the tactile sensing device can have good anti-crosstalk and high precision.

[0053] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention. These improvements and modifications should also be within the scope of protection of the present invention.

Claims

1. A crosstalk-resistant high-resolution tactile sensing device, characterized in that: The invention comprises a bottom-gate field effect transistor assembly, wherein the bottom-gate field effect transistor assembly comprises a drain electrode (5) and a source electrode (6), wherein the drain electrode (5) is covered with a passivation layer (4), and a primary battery assembly is also arranged above the passivation layer (4), and the primary battery assembly is in contact with the source electrode (6) through a channel.

2. The crosstalk-resistant high-resolution tactile sensing device according to claim 1, characterized in that: The bottom-gate field effect transistor assembly further comprises, from bottom to top, a flexible substrate (10), a gate (9), a gate dielectric (8) and a semiconductor active layer (7); the drain electrode (5) is arranged on the semiconductor active layer (7); the source electrode (6) is arranged on the semiconductor active layer (7); and the source electrode (6) and the drain electrode (5) are respectively arranged on two long sides of the semiconductor active layer (7).

3. The crosstalk-resistant high-resolution tactile sensing device according to claim 2, characterized in that: The primary battery assembly comprises, from bottom to top, an active electrode complex (3), an electrolyte (2) and an inert electrode complex (1), wherein the active electrode complex (3) is in contact with the source electrode (6) through a channel.

4. A method for preparing a crosstalk-resistant high-resolution tactile sensing device according to any one of claims 1 to 3, characterized in that: The steps include: S1: preparing a flexible polymer material film on a silicon substrate by spin coating process to serve as the flexible substrate (10); S2: performing a photolithography process on the flexible substrate, and then performing metal deposition to prepare a gate electrode (9), performing atomic layer deposition on the gate electrode (9) to grow a gate dielectric (8) and a semiconductor active layer (7), performing a photolithography process again on the semiconductor active layer (7), and then performing metal deposition again to prepare the source electrode (6) and the drain electrode (5); S3: performing atomic layer deposition on the drain electrode (5) to grow a passivation layer (4), and using a pad photolithography process to make the source electrode (6) directly contact the active electrode complex (3); S4: On the basis of the passivation layer (4) on the source electrode (6) and the drain electrode (5), an active conductive film, a nanoparticle film, an ion conductive electrolyte (2) film, a nanoparticle film and an inert conductive film are sequentially inkjet printed from top to bottom.

5. The method for preparing the crosstalk-resistant high-resolution tactile sensing device according to claim 4, characterized in that: The size of the silicon substrate is 3 inches, and the flexible substrate (10) is made of polyimide, polyvinyl alcohol or polyurethane organic polymer material and has a thickness of 50 μm.

6. The method for preparing the crosstalk-resistant high-resolution tactile sensing device according to claim 4, characterized in that: The gate electrode (9), the drain electrode (5) and the source electrode (6) are made of Ti and Au with high flexibility and high conductivity, and the thickness of the prepared gate electrode (9), the drain electrode (5) and the source electrode (6) is 50 nm.

7. The method for preparing the crosstalk-resistant high-resolution tactile sensing device according to claim 4, characterized in that: The material selected for the gate dielectric (8) is any one of oxides Al 2O 3 and HfO 2 or a combination of the two, and the semiconductor active layer (7) is selected from one of MoS 2 with flexible semiconductor properties and high-concentration SWCNTS.

8. The method for preparing the crosstalk-resistant high-resolution tactile sensing device according to claim 4, characterized in that: The semiconductor active body channel formed between the drain (5) and the source (6) has a length of 100 μm and a width of 8 μm.

9. The method for preparing the crosstalk-resistant high-resolution tactile sensing device according to claim 4, characterized in that: The passivation layer (4) is made of insulating Al 2O 2 and has a thickness of 20 nm.

10. The method for preparing the crosstalk-resistant high-resolution tactile sensing device according to claim 4, characterized in that: The nanoparticle film printed by inkjet printing is a mesh structure with gaps, and it forms a Sohu inert electrode complex (1) and an active electrode complex (3) with the active conductive film and the inert conductive film respectively; the material used to prepare the active conductive film is MXene, the material used to prepare the inert conductive film is CNT, the material used to prepare the nanoparticle film is SiO2, and the material used to prepare the ion conductive electrolyte (2) film is PVA; the ink concentration used for inkjet printing is 0.4 mg / ml; the thickness of the primary battery structure is 300-500 μm.

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