Light emitting diode, preparation method and LED equipment

Abstract

The invention provides a light-emitting diode, a preparation method and LED equipment, the light-emitting diode comprises a substrate and an epitaxial structure, the epitaxial structure comprises an N-type semiconductor layer and a P-type table, the P-type table comprises a multi-quantum well layer and a P-type semiconductor layer, the N-type semiconductor layer is provided with a first current blocking part, and the P-type semiconductor layer is provided with a second current blocking part; the P-type semiconductor layer is provided with a second current blocking part, a third current blocking part and a transparent conductive part, the first current blocking part is provided with a plurality of first adhesion metal parts, a plurality of second adhesion metal parts are arranged between the second current blocking part and the third current blocking part, the first adhesion metal parts are provided with first reflection metal parts, and the second adhesion metal parts are provided with second reflection metal parts. And a second reflection metal part is arranged on the plurality of second adhesion metal parts. By arranging the first adhesion metal part, the second adhesion metal part, the first reflection metal part and the second reflection metal part, the metal structure has the adhesion force, and meanwhile the light reflection effect is enhanced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor technology, and in particular to a light emitting diode, a preparation method and an LED device. Background Art

[0002] A light-emitting diode is a device that converts electrical energy into light energy, and the luminous efficiency is mainly affected by the internal quantum efficiency and the external quantum efficiency. The external quantum efficiency is affected by the chip structure. For example, in the chip structure, the metal structure of the electrode cannot transmit light and has a certain absorption effect on light, which will affect the light output.

[0003] In order to ensure the adhesion of the electrode in existing light-emitting diodes, chromium metal is usually used to improve the wire bonding ability of the front-mounted LED chip and serve as an ohmic contact layer for N-type gallium nitride.

[0004] However, the reflectivity of chromium metal is low and its light absorption coefficient is large, which can easily have a negative impact on the overall brightness of the chip. If a highly reflective metal is used, the adhesion is insufficient. It is difficult to achieve both the adhesion of the metal electrode structure and the brightness of the chip. Summary of the invention

[0005] In view of the deficiencies of the prior art, the purpose of the present invention is to provide a light emitting diode, a preparation method and an LED device, aiming to solve the problem in the prior art that it is difficult to achieve both metal structure adhesion and chip brightness of the light emitting diode.

[0006] In order to achieve the above object, the present invention is implemented by the following technical solutions:

[0007] A light emitting diode, comprising a substrate and an initial epitaxial structure arranged from bottom to top, the initial epitaxial structure comprising an N-type semiconductor layer and a P-type platform arranged from bottom to top, the projection area of ​​the P-type platform on a horizontal plane being smaller than the projection area of ​​the N-type semiconductor layer on a horizontal plane, the P-type platform comprising a multi-quantum well layer and a P-type semiconductor layer arranged from bottom to top, a first current blocking portion being arranged on a side of the N-type semiconductor layer facing the P-type platform, a second current blocking portion, a third current blocking portion and a transparent conductive portion being arranged on a side of the P-type semiconductor layer facing away from the multi-quantum well layer, the transparent conductive portion being connected to the second current blocking portion, and the first current blocking portion being arranged on a side of the P-type semiconductor layer facing away from the multi-quantum well layer. A plurality of first adhesion metal parts are arranged on the part, the second current blocking part includes a blocking ring, the blocking ring encloses a placement area, the third current blocking part is located in the placement area, a plurality of second adhesion metal parts are arranged in the placement area, a plurality of second adhesion metal parts are located between the blocking ring and the third current blocking part, the same first reflective metal part is arranged on a plurality of the first adhesion metal parts, the same second reflective metal part is arranged on a plurality of the second adhesion metal parts, the second reflective metal parts are connected to the transparent conductive part to form a final epitaxial structure, and a protective layer is arranged on the side of the final epitaxial structure facing away from the substrate.

[0008] Compared with the prior art, the beneficial effect of the present invention lies in that: by setting a plurality of the first adhesive metal parts and a plurality of the second adhesive metal parts, respectively matching the first reflective metal part and the second reflective metal part, together forming the metal structure of the electrode of the light-emitting diode, the metal structure has adhesion, and the adhesion effect between the metal structure and the epitaxial structure is strong. At the same time, the reflection effect of light is enhanced and the absorption of light is reduced through the first reflective metal part and the second reflective metal part. By setting the first current blocking part, the second current blocking part and the third current blocking part, the injected current is prevented from flowing directly under the electrode, the range of current flow is expanded, the current blocking effect is prevented, and the luminous intensity is further improved.

[0009] Furthermore, the first reflective metal part includes a first reflective metal sheet and a first reflective metal strip connected to the first reflective metal sheet, the first reflective metal strip is connected to the N-type semiconductor layer, and an end portion of the first reflective metal sheet facing the N-type semiconductor layer is connected to the first current blocking part.

[0010] Furthermore, the second reflective metal portion includes a second reflective metal sheet and a plurality of second reflective metal strips connected to the second reflective metal sheet, the second current blocking portion also includes a plurality of blocking strips, the side of the blocking strips facing away from the P-type stage is connected to the second reflective metal strips, and one end of the second reflective metal sheet facing the P-type stage is connected to the third current blocking portion.

[0011] Furthermore, a first groove body and a second groove body are arranged on the protective layer, and both the first groove body and the second groove body penetrate the protective layer, the first groove body corresponds to the first reflective metal part, and the second groove body corresponds to the second reflective metal part.

[0012] On the other hand, an embodiment of the present invention further provides a method for preparing a light emitting diode, which is used to prepare the light emitting diode described in the above technical solution, comprising the following steps:

[0013] Providing a substrate, and sequentially depositing an N-type semiconductor layer, a multi-quantum well layer, and a P-type semiconductor layer on the substrate;

[0014] Etching the multi-quantum well layer and the P-type semiconductor layer to expose a portion of the N-type semiconductor layer to form a P-type platform, wherein the N-type semiconductor layer and the P-type platform form an initial epitaxial structure;

[0015] A first current blocking portion is formed on the N-type semiconductor layer, and a second current blocking portion and a third current blocking portion are formed on the P-type semiconductor layer, wherein the second current blocking portion includes a blocking ring, the blocking ring encloses a placement area, and the third current blocking portion is located in the placement area;

[0016] Depositing a plurality of first adhesive metal parts on the first current blocking part, depositing a plurality of second adhesive metal parts between the blocking ring and the third current blocking part, and depositing a transparent conductive part on the P-type platform, wherein the transparent conductive part is connected to the second current blocking part;

[0017] Depositing a first reflective metal portion on a plurality of the first adhesive metal portions, and depositing a second reflective metal portion on a plurality of the second adhesive metal portions and the transparent conductive portion, so as to form a final epitaxial structure;

[0018] A protection layer is deposited on the side of the final epitaxial structure facing away from the substrate to form a light emitting diode.

[0019] Furthermore, the step of preparing a first current blocking portion on the N-type semiconductor layer, preparing a second current blocking portion and a third current blocking portion on the P-type semiconductor layer, wherein the second current blocking portion includes a blocking ring, the blocking ring encloses a placement area, and the third current blocking portion is located in the placement area comprises:

[0020] Cleaning the initial epitaxial structure, and depositing an insulating layer on the initial epitaxial structure;

[0021] The insulating layer is coated with glue, exposed and developed, a first mask pattern is made on the area corresponding to the N-type semiconductor layer, a second mask pattern and a third mask pattern are made on the area corresponding to the P-type semiconductor layer, and a portion of the insulating layer is removed by etching to form a first current blocking portion, a second current blocking portion and a third current blocking portion, respectively.

[0022] Furthermore, after the step of depositing a first reflective metal portion on a plurality of the first adhesive metal portions, and depositing a second reflective metal portion on a plurality of the second adhesive metal portions and the transparent conductive portion to form a final epitaxial structure, the method further includes:

[0023] Using a light source with a wavelength of 470 nm to 520 nm, performing maskless exposure on the first reflective metal portion and the second reflective metal portion from the substrate toward the final epitaxial structure;

[0024] The first reflective metal portion and the second reflective metal portion are exposed from the final epitaxial structure toward the substrate.

[0025] On the other hand, an embodiment of the present invention further provides an LED device, which includes the light emitting diode described in the above technical solution. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a schematic structural diagram of a light emitting diode in a first embodiment of the present invention;

[0027] Figure 2 It is a schematic top view of a part of the structure of the light emitting diode in the first embodiment of the present invention;

[0028] Figure 3 is a flow chart of a method for preparing a light emitting diode according to a second embodiment of the present invention;

[0029] Description of main component symbols:

[0030] Substrate 100 N-type semiconductor layer 110 P-type table 120 First current blocking portion 201 Second current blocking portion 202 The third current blocking portion 203 Transparent conductive part 204 First adhesive metal part 211 Second adhesive metal part 212 First reflective metal portion 221 Second reflective metal portion 222 Protective layer 300

[0031] The following specific implementation manner will further illustrate the present invention in conjunction with the above-mentioned drawings. DETAILED DESCRIPTION

[0032] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. Several embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0033] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only.

[0034] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0035] See also Figure 1 The light emitting diode in the first embodiment of the present invention comprises a substrate 100 and an initial epitaxial structure arranged from bottom to top, wherein the initial epitaxial structure comprises an N-type semiconductor layer 110 and a P-type platform 120 arranged from bottom to top, wherein the projection area of ​​the P-type platform 120 on a horizontal plane is smaller than the projection area of ​​the N-type semiconductor layer 110 on a horizontal plane, and the P-type platform 120 comprises a multi-quantum well layer and a P-type semiconductor layer arranged from bottom to top. Preferably, the N-type semiconductor layer 110 and the P-type semiconductor layer are both made of gallium nitride, and the substrate 100 is made of sapphire. Glue is applied on the semiconductor epitaxial layer, and then exposure and development operations are performed to produce a photolithography pattern, and a part of the P-type semiconductor layer and the multi-quantum well layer are removed by dry etching to expose the N-type semiconductor layer 110. Furthermore, the gas used for dry etching is selected from Ar, Cl2, BCl2, CF4, and CCl4, and the glue is removed and cleaned after etching to facilitate subsequent production.

[0036] The first current blocking portion 201 is arranged on the side of the N-type semiconductor layer 110 facing the P-type stage, and the second current blocking portion 202, the third current blocking portion 203 and the transparent conductive portion 204 are arranged on the side of the P-type semiconductor layer facing away from the multi-quantum well layer, and the transparent conductive portion 204 is connected to the second current blocking portion 202. A plurality of first adhesive metal portions 211 are arranged on the first current blocking portion 201, and the second current blocking portion 202 includes a blocking ring and a plurality of blocking bars, and the blocking ring encloses a placement area, and the third current blocking portion 203 is located in the placement area, and a plurality of second adhesive metal portions 212 are arranged in the placement area, and the plurality of second adhesive metal portions 212 are located between the blocking ring and the third current blocking portion 203. Preferably, please refer to Figure 2The blocking ring is located at one end of the initial epitaxial structure, the blocking ring connects the two blocking bars, the two blocking bars extend from the blocking ring to the end of the initial epitaxial structure facing away from the blocking ring, the first current blocking portion 201 is D-shaped, the first current blocking portion 201 is located at the end of the initial epitaxial structure facing away from the blocking ring, the first current blocking portion 201, the second current blocking portion 202 and the third current blocking portion 203 are all made of the same insulating material, specifically, an insulating material is deposited on the cleaned initial epitaxial structure to form an insulating layer, a glue is applied on the insulating layer, and an exposure and development process is performed to produce a mask pattern , and then etching is performed to remove the excess insulating layer and de-glue, thereby obtaining the desired current blocking part. The transparent conductive part 204 is made of transparent conductive material, such as ITO and IZO. In this embodiment, ITO material is specifically selected. Further, when preparing the transparent conductive part 204, a transparent conductive material is first deposited on the side of the P-type platform 120 facing away from the N-type semiconductor layer to form a transparent conductive layer, and the transparent conductive layer is coated with glue, exposed and developed to produce a photolithography pattern, and wet etching is used to remove the excess transparent conductive layer to expose part of the second current blocking layer and the third current blocking part 203. After de-glueing, the transparent conductive part 204 is formed.

[0037] Preferably, several first adhesive metal parts 211 are arranged at intervals, and several second adhesive metal parts 212 are arranged at intervals, and there is a gap between adjacent second adhesive metal parts 212. When the high-reflective metal part is subsequently made, the high-reflective metal part and the second adhesive metal part 212 can partially contact the P-type platform 120. It can be understood that the first current blocking part 201, the second current blocking part 202 and the third current blocking part 203 can prevent the injected current from flowing directly under the electrode, and can expand the range of current flow. The specific shape design further prevents the current blocking effect, which is beneficial to improve the luminous intensity, that is, improve the light efficiency of the light-emitting diode, and selectively deposit high-adhesion metal to form several first adhesive metal parts 211 and several second adhesive metal parts 212 arranged at intervals, which is beneficial to improve the adhesion of the metal electrode structure, improve the connection strength between the metal electrode and the epitaxial structure, and save materials and optimize the current range.

[0038] The same first reflective metal part 221 is disposed on a plurality of the first adhesive metal parts 211, and the same second reflective metal part 222 is disposed on a plurality of the second adhesive metal parts 212, wherein the second reflective metal part 222 is connected to the transparent conductive part 204 to form a final epitaxial structure, wherein the first reflective metal part 221 includes a first reflective metal sheet and a first reflective metal strip connected to the first reflective metal sheet, wherein the first reflective metal strip 221 is connected to the N-type semiconductor layer 110, and an end of the first reflective metal sheet facing the N-type semiconductor layer 110 is connected to the first current blocking part 201, and the second reflective metal part 2 .... The second reflective metal sheet and a plurality of second reflective metal strips connected to the second reflective metal sheet, the side of the barrier strip facing away from the P-type stage 120 is connected to the second reflective metal strip, the end of the second reflective metal sheet facing the P-type stage 120 is connected to the third current blocking portion 203, a protective layer 300 is arranged on the side of the final epitaxial structure facing away from the substrate, a first slot body and a second slot body are arranged on the protective layer 300, the first slot body and the second slot body both penetrate the protective layer 300, the first slot body corresponds to the first reflective metal portion 221, and the second slot body corresponds to the second reflective metal portion 222. Preferably, refer to Figure 2The first reflective metal strip extends from the first reflective metal sheet to the second reflective metal sheet, the second reflective metal sheet connects two second reflective metal strips, the second reflective metal strip and the blocking strip are adapted in shape and position, the first reflective metal strip is located between the two second reflective metal strips, further, the high reflective metal is patterned to improve the adhesion between the high reflective metal and the high adhesion metal, a self-alignment method is adopted, an upward emitting light source is provided under the substrate 100, the wavelength of the light source is 500nm, because the high adhesion metal has a shielding effect on light, that is, when light is incident from bottom to top, the first adhesion metal part 211 has a shielding effect on the first reflective metal part 221, and the second adhesion metal part 212 has a shielding effect on the second reflective metal part 222 The method can be used to directly perform maskless exposure with high efficiency. After the bottom surface exposure is completed, light is provided from top to bottom, that is, the light is incident from the top surface of the first reflective metal part 221 and the second reflective metal part 222. Specifically, the epitaxial structure and the transparent conductive part 204 are covered with photoresist, and empty windows are left at the positions of the first reflective metal part 221 and the second reflective metal part 222 for exposure. The high-reflective metal is patterned by double-sided exposure to further enhance the adhesion inside the metal electrode structure. The protective layer 300 is made of insulating material. After the insulating material is deposited, a protective insulating layer is formed. The protective insulating layer is coated with glue, exposed and developed. A mask pattern is made and the protective insulating layer above the metal structure is removed by etching to form the protective layer 300. It is understandable that chromium metal is usually used as the adhesion metal of N-type gallium nitride and P-type gallium nitride in traditional light-emitting diode chips. However, the reflectivity of chromium metal is low and the absorption coefficient of light is large, which will have a negative impact on the brightness of the light-emitting diode. The first reflective metal part 221 and the second reflective metal part 222 are arranged on the first adhesion metal part 211 and the second adhesion metal part 212, which can solve the problem of strong adhesion but poor reflection effect of the traditional metal electrode structure, so that high adhesion and high reflectivity are taken into account.

[0039] See also Figure 3 The second embodiment of the present invention provides a method for preparing a light emitting diode, which is used to prepare the light emitting diode described in the above technical solution. The method for preparing the light emitting diode comprises the following steps:

[0040] S10: providing a substrate, and sequentially depositing an N-type semiconductor layer, a multi-quantum well layer, and a P-type semiconductor layer on the substrate;

[0041] Preferably, the substrate is a sapphire substrate, the N-type semiconductor layer is N-type gallium nitride, and the P-type semiconductor layer is P-type gallium nitride.

[0042] S20: etching the multi-quantum well layer and the P-type semiconductor layer to expose a portion of the N-type semiconductor layer to form a P-type platform, wherein the N-type semiconductor layer and the P-type platform form an initial epitaxial structure;

[0043] Dry etching is adopted, and the dry etching gas selected is Ar, Cl2, BCl2, CF4 and CCl4. Specifically, a glue is coated on the epitaxial layer and developed and exposed to produce a photolithography pattern, and then the N-type semiconductor layer is exposed by etching according to the pattern.

[0044] S30: preparing a first current blocking portion on the N-type semiconductor layer, and preparing a second current blocking portion and a third current blocking portion on the P-type semiconductor layer, wherein the second current blocking portion includes a blocking ring, the blocking ring encloses a placement area, and the third current blocking portion is located in the placement area;

[0045] The shapes of the first current blocking portion, the second current blocking portion and the third current blocking portion are all obtained by etching after manufacturing a mask pattern, and an annular gap is provided between the third current blocking portion and the second current blocking portion.

[0046] Specifically, the step S30 includes:

[0047] S310: cleaning the initial epitaxial structure, and depositing an insulating layer on the initial epitaxial structure;

[0048] The initial epitaxial structure is debonded and cleaned for subsequent deposition operations. The insulating layer is made of oxide with a thickness of 10 nm, which can prevent the current injected into the metal electrode from flowing directly under the P electrode, avoid current blocking effect, and help improve the luminous intensity.

[0049] S320: The insulating layer is coated with glue, exposed and developed, a first mask pattern is made on the area corresponding to the N-type semiconductor layer, a second mask pattern and a third mask pattern are made on the area corresponding to the P-type semiconductor layer, and a portion of the insulating layer is removed by etching to form a first current blocking portion, a second current blocking portion and a third current blocking portion, respectively.

[0050] It can be understood that the shapes of the first current blocking part, the second current blocking part and the third blocking part are designed and customized according to the required metal electrode shape, and cooperate with the metal electrode to achieve better current diffusion effect, which is beneficial to prevent current blocking phenomenon.

[0051] S40: depositing a plurality of first adhesive metal parts on the first current blocking part, depositing a plurality of second adhesive metal parts between the blocking ring and the third current blocking part, and depositing a transparent conductive part on the P-type platform, wherein the transparent conductive part is connected to the second current blocking part;

[0052] Preferably, the material of the transparent conductive part is ITO. After depositing the ITO material layer, a photolithography pattern is produced by coating, developing and exposing, and then excess ITO material is removed by wet etching to form the transparent conductive part. The shape of the transparent conductive part is similar to that of the P-type platform, and the projected area on the horizontal plane is smaller than the projected area of ​​the P-type platform on the horizontal plane. The transparent conductive part does not block the light, which is beneficial to ensuring the light effect. Furthermore, a plurality of the first adhesion metal parts are arranged at intervals, and a plurality of the second adhesion metal parts are arranged at intervals. It can be understood that the use of high-adhesion metal materials is reduced, but a certain number of adhesion points are still guaranteed. While ensuring high adhesion between the metal and gallium nitride, the material of the high-adhesion metal is saved and the absorption of light by the high-adhesion metal is reduced.

[0053] S50: depositing a first reflective metal portion on a plurality of the first adhesive metal portions, and depositing a second reflective metal portion on a plurality of the second adhesive metal portions and the transparent conductive portion, to form a final epitaxial structure;

[0054] It can be understood that the first reflective metal part and the second reflective metal part have a small absorption coefficient of the light inside the light emitting diode and reflect the light, thereby improving the light efficiency and brightness of the light emitting diode.

[0055] Specifically, after step S50, the method further includes:

[0056] S510: using a light source with a wavelength of 470 nm to 520 nm, performing maskless exposure on the first reflective metal portion and the second reflective metal portion from the substrate toward the final epitaxial structure;

[0057] Preferably, a light source with a wavelength of 500nm is used. Since the first adhesion metal part and the second adhesion metal part have a light shielding effect and are located below the first reflective metal part and the second reflective metal part, when the direction of light is from the substrate to the final epitaxial structure, that is, when the light is incident from bottom to top, the first adhesion metal part and the second adhesion metal part are equivalent to natural masks, and there is no need to make additional masks.

[0058] S520: exposing the first reflective metal portion and the second reflective metal portion from the final epitaxial structure toward the substrate.

[0059] The upper surface of the final epitaxial structure is covered with photoresist, and only empty windows are left at corresponding positions of the first reflective metal part and the second reflective metal part, and the empty windows are exposed, so that the patterning of the high-reflective metal is completed. Patterning the first reflective metal part and the second reflective metal part is beneficial to preventing the adhesion effect under the high-reflective electrode from being reduced due to the precise alignment of the part when manufacturing the high-reflective electrode.

[0060] S60: depositing a protection layer on the side of the final epitaxial structure facing away from the substrate to form a light emitting diode.

[0061] Preferably, a first groove body and a second groove body are provided on the protective layer, and the first groove body and the second groove body both penetrate the protective layer, the first groove body corresponds to the position of the first reflective metal part, and the second groove body corresponds to the position of the second reflective metal part. Specifically, a mask pattern is produced by coating, exposing and developing, and a portion of the insulating material of the protective layer is removed by etching, and then degumming is performed to prevent the protective layer from covering the metal electrode.

[0062] In some embodiments, the present invention further provides an LED device, which includes the light emitting diode described in the above embodiments.

[0063] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0064] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the patent of the present invention. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A light emitting diode, characterized in that: The invention comprises a substrate and an initial epitaxial structure arranged from bottom to top, wherein the initial epitaxial structure comprises an N-type semiconductor layer and a P-type platform arranged from bottom to top, wherein the projection area of ​​the P-type platform on a horizontal plane is smaller than the projection area of ​​the N-type semiconductor layer on a horizontal plane, wherein the P-type platform comprises a multi-quantum well layer and a P-type semiconductor layer arranged from bottom to top, wherein a first current blocking portion is arranged on a side of the N-type semiconductor layer facing the P-type platform, and a second current blocking portion, a third current blocking portion and a transparent conductive portion are arranged on a side of the P-type semiconductor layer facing away from the multi-quantum well layer, wherein the transparent conductive portion is connected to the second current blocking portion, and a A plurality of first adhesion metal parts, the second current blocking part includes a blocking ring, the blocking ring encloses a placement area, the third current blocking part is located in the placement area, a plurality of second adhesion metal parts are arranged in the placement area, a plurality of the second adhesion metal parts are located between the blocking ring and the third current blocking part, a plurality of the first adhesion metal parts are arranged with the same first reflective metal part, a plurality of the second adhesion metal parts are arranged with the same second reflective metal part, the second reflective metal part is connected to the transparent conductive part to form a final epitaxial structure, and a protective layer is arranged on the side of the final epitaxial structure facing away from the substrate.

2. The light emitting diode according to claim 1, characterized in that: The first reflective metal portion includes a first reflective metal sheet and a first reflective metal strip connected to the first reflective metal sheet, the first reflective metal strip is connected to the N-type semiconductor layer, and one end of the first reflective metal sheet facing the N-type semiconductor layer is connected to the first current blocking portion.

3. The light emitting diode according to claim 1, characterized in that: The second reflective metal part includes a second reflective metal sheet and a plurality of second reflective metal strips connected to the second reflective metal sheet. The second current blocking part also includes a plurality of blocking strips. The side of the blocking strips facing away from the P-type stage is connected to the second reflective metal strips. The end of the second reflective metal sheet facing the P-type stage is connected to the third current blocking part.

4. The light emitting diode according to claim 1, characterized in that: A first groove body and a second groove body are arranged on the protective layer. The first groove body and the second groove body both penetrate the protective layer. The first groove body corresponds to the first reflective metal part, and the second groove body corresponds to the second reflective metal part.

5. A method for preparing a light emitting diode, for preparing the light emitting diode according to any one of claims 1 to 4, characterized in that: The method for preparing the light emitting diode comprises the following steps: Providing a substrate, and sequentially depositing an N-type semiconductor layer, a multi-quantum well layer, and a P-type semiconductor layer on the substrate; Etching the multi-quantum well layer and the P-type semiconductor layer to expose a portion of the N-type semiconductor layer to form a P-type platform, wherein the N-type semiconductor layer and the P-type platform form an initial epitaxial structure; A first current blocking portion is formed on the N-type semiconductor layer, and a second current blocking portion and a third current blocking portion are formed on the P-type semiconductor layer, wherein the second current blocking portion includes a blocking ring, the blocking ring encloses a placement area, and the third current blocking portion is located in the placement area; Depositing a plurality of first adhesive metal parts on the first current blocking part, depositing a plurality of second adhesive metal parts between the blocking ring and the third current blocking part, and depositing a transparent conductive part on the P-type platform, wherein the transparent conductive part is connected to the second current blocking part; Depositing a first reflective metal portion on a plurality of the first adhesive metal portions, and depositing a second reflective metal portion on a plurality of the second adhesive metal portions and the transparent conductive portion, so as to form a final epitaxial structure; A protection layer is deposited on the side of the final epitaxial structure facing away from the substrate to form a light emitting diode.

6. The method for preparing a light emitting diode according to claim 1, characterized in that: The step of preparing a first current blocking portion on the N-type semiconductor layer, preparing a second current blocking portion and a third current blocking portion on the P-type semiconductor layer, wherein the second current blocking portion includes a blocking ring, the blocking ring encloses a placement area, and the third current blocking portion is located in the placement area comprises: Cleaning the initial epitaxial structure, and depositing an insulating layer on the initial epitaxial structure; The insulating layer is coated with glue, exposed and developed, a first mask pattern is made on the area corresponding to the N-type semiconductor layer, a second mask pattern and a third mask pattern are made on the area corresponding to the P-type semiconductor layer, and a portion of the insulating layer is removed by etching to form a first current blocking portion, a second current blocking portion and a third current blocking portion, respectively.

7. The method for preparing a light emitting diode according to claim 1, characterized in that: After the step of depositing a first reflective metal portion on a plurality of the first adhesive metal portions, and depositing a second reflective metal portion on a plurality of the second adhesive metal portions and the transparent conductive portion to form a final epitaxial structure, the method further includes: Using a light source with a wavelength of 470 nm to 520 nm, performing maskless exposure on the first reflective metal portion and the second reflective metal portion from the substrate toward the final epitaxial structure; The first reflective metal portion and the second reflective metal portion are exposed from the final epitaxial structure toward the substrate.

8. An LED device, characterized in that: It comprises the light emitting diode as claimed in claims 1 to 4.

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