Substrate processing apparatus and substrate processing method

Abstract

The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a substrate processing device and a substrate processing method.The substrate processing device comprises a holder, a processing container, a first heater and a control part, and the holder is used for horizontally holding a substrate; the side face of the substrate and / or the area, close to the side face of the substrate, of the back face of the substrate is detachably connected with the retainer in a sealed mode. The processing container comprises a first cavity used for containing a substrate and substrate processing liquid, and the depth of the first cavity is larger than the thickness of the substrate. The first heater is used for emitting electromagnetic waves from the back surface of the substrate, and the wavelength of the electromagnetic waves is configured to pass through the substrate to heat the substrate processing liquid; the control part is used for controlling the first heater to work. The substrate treating fluid is heated through the first heater, the part, close to the substrate, of the substrate treating fluid is vaporized to generate bubbles, the tension of the bubbles counteracts the tension generated by the surface tension of the substrate treating fluid, the risk that fine patterns deform or collapse in the drying process is reduced, and the product yield is increased.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a substrate processing device and a substrate processing method. Background Art

[0002] In the manufacturing process of semiconductors, etc., a processing liquid is often supplied to the surface of a substrate such as a wafer or a display substrate to clean the substrate surface, and then the substrate surface is dried.

[0003] After cleaning the substrate, there is residual processing liquid in the gaps between the patterns on the substrate surface, and the surface tension of the processing liquid will exert a pulling force on the pattern. During the drying process of the substrate surface, due to the uneven height of the residual processing liquid in the gaps and the uneven drying speed of the substrate surface, the pulling force generated by the surface tension of the processing liquid in the gaps on both sides of the pattern is also different, resulting in a greatly increased risk of deformation or collapse of the fine pattern during the drying process, which in turn leads to a significant decrease in product yield. Summary of the invention

[0004] The purpose of the present application is to provide a substrate processing device and a substrate processing method to reduce the risk of deformation or collapse of fine patterns during a drying process and improve product yield.

[0005] In order to achieve the above object, the present application provides a substrate processing device, comprising:

[0006] A holder, used for holding the substrate horizontally, wherein the holder can be detachably sealed and connected to a side surface of the substrate and / or an area of ​​a back surface of the substrate close to the side surface of the substrate;

[0007] A processing container, comprising a first cavity for accommodating the substrate and a substrate processing liquid above the substrate, wherein the depth of the first cavity is greater than the thickness of the substrate;

[0008] a first heater, configured to emit electromagnetic waves from the back side of the substrate to the substrate processing liquid, wherein the wavelength of the electromagnetic waves is configured to be able to pass through the substrate and heat the substrate processing liquid;

[0009] The control unit is used to control the operation of the first heater.

[0010] Optionally, the wavelength of the electromagnetic wave emitted by the first heater is 1 μm to 1000 μm.

[0011] Optionally, the first heater is capable of pulse heating.

[0012] Optionally, the substrate processing device further includes a liquid temperature control unit, the liquid temperature control unit includes a second heater and a first temperature sensor, the first temperature sensor is used to detect the temperature of the substrate processing liquid, and the second heater is used to heat the substrate processing liquid.

[0013] Optionally, the liquid temperature control unit is configured as:

[0014] When the temperature of the substrate processing liquid detected by the first temperature sensor is lower than a first preset value, the second heater heats the substrate processing liquid, and the first preset value is 1° C. to 10° C. lower than the boiling point of the substrate processing liquid;

[0015] When the temperature of the substrate processing liquid detected by the first temperature sensor is equal to or higher than the first preset value, the second heater stops heating the substrate processing liquid.

[0016] Optionally, the second heater and the first temperature sensor are both connected to the control unit, and the control unit is configured as follows:

[0017] When the temperature of the substrate processing liquid detected by the first temperature sensor is lower than a first preset value, the control unit controls the second heater to heat the substrate processing liquid, and the first preset value is 1° C. to 10° C. lower than the boiling point of the substrate processing liquid;

[0018] When the temperature of the substrate processing liquid detected by the first temperature sensor is equal to or higher than the first preset value, the control part controls the second heater to stop heating the substrate processing liquid.

[0019] Optionally, the control unit is used to control the operation of the first heater, including:

[0020] The control part confirms that the temperature of the substrate processing liquid detected by the first temperature sensor is equal to or higher than the first preset value, and the control part controls the first heater to heat the substrate processing liquid.

[0021] Optionally, the substrate processing device further includes a liquid level sensor, the liquid level sensor is used to detect the liquid level position of the substrate processing liquid in the first chamber, the liquid level sensor, the second heater and the first temperature sensor are all connected to the control unit, and the control unit is configured to: confirm that the liquid level position of the substrate processing liquid detected by the liquid level sensor reaches a second preset value, and start to perform the heating step, and the second preset value is equal to or higher than the front side of the substrate;

[0022] The heating step comprises:

[0023] When the temperature of the substrate processing liquid detected by the first temperature sensor is lower than a first preset value, controlling the second heater to heat the substrate processing liquid, the first preset value being 1° C. to 10° C. lower than the boiling point of the substrate processing liquid;

[0024] When the temperature of the substrate processing liquid detected by the first temperature sensor is equal to or higher than the first preset value, the second heater is controlled to stop heating the substrate processing liquid, and the first heater is controlled to heat the substrate processing liquid.

[0025] Optionally, the liquid level sensor detecting that the liquid level of the substrate processing liquid reaches a second preset value includes:

[0026] The liquid level sensor detects that the liquid level of the substrate processing liquid drops to the second preset value.

[0027] Optionally, the substrate processing device further includes a liquid input part and a liquid discharge part, the liquid input part is used to introduce the substrate processing liquid into the first cavity, and the liquid discharge part is used to discharge the substrate processing liquid in the first cavity.

[0028] Optionally, the substrate processing device further includes a liquid level sensor, and the liquid level sensor is used to detect the liquid level position of the substrate processing liquid in the first chamber.

[0029] Optionally, the liquid discharge portion is configured as:

[0030] When the liquid level of the substrate processing liquid in the first chamber detected by the liquid level sensor is higher than a second preset value, the liquid discharge portion is opened to discharge the liquid, and the second preset value is equal to or higher than the front surface of the substrate;

[0031] When the liquid level position of the substrate processing liquid in the first chamber detected by the liquid level sensor is equal to or lower than the second preset value, the liquid discharge portion is closed.

[0032] Optionally, the liquid level sensor and the liquid discharge unit are both connected to the control unit, and the control unit is configured as follows:

[0033] When the liquid level of the substrate processing liquid in the first chamber detected by the liquid level sensor is higher than a second preset value, the control unit controls the liquid discharge unit to start discharging liquid, and the second preset value is equal to or higher than the front side of the substrate;

[0034] When the liquid level position of the substrate processing liquid in the first chamber detected by the liquid level sensor is equal to or lower than the second preset value, the control part controls the liquid discharge part to stop discharging liquid.

[0035] Optionally, the liquid level sensor, the liquid input part and the liquid discharge part are all connected to the control part, and the control part is configured as follows:

[0036] Controlling the liquid input portion to open so as to input the substrate processing liquid into the first chamber;

[0037] After the liquid level sensor detects that the liquid level of the substrate processing liquid is higher than a second preset value, controlling the liquid input part to close and controlling the liquid discharge part to open to discharge the liquid, the second preset value being equal to or higher than the front side of the substrate;

[0038] The liquid discharge portion is closed when the liquid level position of the substrate processing liquid in the first chamber detected by the liquid level sensor is equal to the second preset value, and the second preset value is equal to or higher than the front surface of the substrate.

[0039] Optionally, the substrate processing device further includes a gas supply part, the gas supply part includes a gas input component and a gas output component, the gas input component is used to introduce gas into the first cavity, and the gas output component is used to exhaust the gas in the first cavity.

[0040] Optionally, the gas supply unit further includes a pressure sensor, and the pressure sensor is used to detect the pressure in the first cavity. The gas supply unit is configured as follows:

[0041] When the air pressure in the first cavity measured by the air pressure sensor is lower than a third preset value, the gas input component increases the intake flow rate and / or the gas output component reduces the exhaust flow rate;

[0042] When the air pressure in the first cavity measured by the air pressure sensor is higher than the third preset value, the gas input component reduces the intake flow rate and / or the gas output component increases the exhaust flow rate.

[0043] Optionally, the gas supply unit further includes a pressure sensor, which is used to detect the air pressure in the first cavity. The pressure sensor, the gas input component and the gas output component are all connected to the control unit. The gas supply unit is configured as follows:

[0044] When the air pressure in the first cavity measured by the air pressure sensor is lower than a third preset value, the control unit controls the gas input component to increase the intake flow rate and / or the control unit controls the gas output component to reduce the exhaust flow rate;

[0045] When the air pressure in the first cavity measured by the air pressure sensor is higher than the third preset value, the control unit controls the gas input component to reduce the intake flow rate and / or the control unit controls the gas output component to increase the exhaust flow rate.

[0046] Optionally, the gas supply unit includes a second temperature sensor and a third heater, the second temperature sensor is used to detect the temperature of the gas in the first cavity, and the third heater is used to heat the gas introduced into the first cavity by the gas input assembly before the gas enters the first cavity.

[0047] Optionally, the gas supply unit is configured as:

[0048] When the gas temperature in the first chamber measured by the second temperature sensor is lower than a fourth preset value, the third heater heats the gas introduced into the first chamber by the gas input assembly, the fourth preset value is lower than the first preset value, and the first preset value is 1° C. to 10° C. lower than the boiling point of the substrate processing liquid;

[0049] When the gas temperature in the first cavity measured by the second temperature sensor is equal to or higher than the fourth preset value, the third heater stops heating or reduces heating power.

[0050] Optionally, the second temperature sensor and the third heater are both connected to the control unit, and the control unit is configured as follows:

[0051] When the gas temperature in the first cavity measured by the second temperature sensor is lower than a fourth preset value, the control unit controls the third heater to heat the gas introduced into the first cavity by the gas input assembly, the fourth preset value being lower than the first preset value, and the first preset value being lower than the boiling point of the substrate processing liquid by 1° C. to 10° C.;

[0052] When the gas temperature in the first cavity measured by the second temperature sensor is equal to or higher than the fourth preset value, the control unit controls the third heater to stop heating or reduce heating power.

[0053] Optionally, the substrate processing device further comprises a vibrator, which is capable of applying vibration to the substrate processing liquid, and the vibration frequency of the vibrator is 10 kHz to 3 MHz.

[0054] The present application also provides a substrate processing method, comprising:

[0055] Keep the substrate horizontally;

[0056] Providing a substrate processing liquid having a temperature equal to a first preset value to the front side of the substrate, wherein the liquid level of the substrate processing liquid is not lower than the front side of the substrate, and the first preset value is 1° C. to 10° C. lower than the boiling point of the substrate processing liquid;

[0057] The substrate processing liquid is heated by electromagnetic waves passing through the substrate from the back side of the substrate until a portion of the substrate processing liquid close to the substrate is vaporized to generate bubbles.

[0058] Optionally, providing a substrate processing liquid having a temperature equal to a first preset value to the front side of the substrate comprises:

[0059] providing the substrate processing liquid having a temperature lower than the first preset value to the front surface of the substrate until the liquid level of the substrate processing liquid is no lower than the front surface of the substrate;

[0060] The substrate processing liquid is heated until the temperature of the substrate processing liquid is equal to the first preset value.

[0061] Optionally, the wavelength of the electromagnetic wave is 1 μm to 1000 μm.

[0062] Optionally, the electromagnetic wave is a pulsed electromagnetic wave.

[0063] Optionally, in the process of heating the substrate processing liquid from the back side of the substrate by electromagnetic waves, ultrasonic vibration is applied to the substrate processing liquid to make the bubbles rise.

[0064] Optionally, in the process of heating the substrate processing liquid from the back side of the substrate by electromagnetic waves, gas is provided to the liquid surface of the substrate processing liquid.

[0065] Optionally, the temperature of the gas provided to the liquid surface of the substrate processing liquid is equal to a fourth preset value, and the fourth preset value is less than or equal to the first preset value.

[0066] Optionally, the substrate processing method further includes:

[0067] The gas pressure at the liquid surface of the substrate processing liquid is controlled so that the size and generation speed of the bubbles are within a preset parameter range.

[0068] The substrate processing device and substrate processing method disclosed in the present application have the following beneficial effects:

[0069] In the present application, a substrate processing device includes a holder, a processing container, a first heater and a control unit, wherein the holder is used to horizontally hold the substrate, the processing container includes a first cavity for accommodating the substrate and the substrate processing liquid, the depth of the first cavity is greater than the thickness of the substrate, the first heater is used to emit electromagnetic waves from the back of the substrate to the substrate processing liquid, the wavelength of the electromagnetic waves is configured to be able to pass through the substrate to heat the substrate processing liquid, and the control unit is used to control the operation of the first heater. The control unit controls the operation of the first heater to heat the substrate processing liquid, so that the part of the substrate processing liquid close to the substrate is vaporized to generate bubbles, and the tension of the bubbles offsets the tension generated by the surface tension of the substrate processing liquid, thereby reducing the risk of deformation or collapse of fine patterns during the drying process and improving the product yield.

[0070] Other features and advantages of the present application will become apparent from the following detailed description, or may be learned in part by the practice of the present application.

[0071] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0072] The drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present application, and together with the specification are used to explain the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0073] Figure 1 It is a structural schematic diagram of a substrate processing device in an embodiment of the present application.

[0074] Figure 2 It is a schematic diagram of the substrate drying process in the prior art.

[0075] Figure 3 Schematic diagram of the substrate drying process in the embodiment of the present application.

[0076] Figure 4 It is a schematic diagram of the force on the pattern during the substrate drying process in the embodiment of the present application.

[0077] Figure 5 It is a schematic diagram of the change in radiant illumination of the first heater in the embodiment of the present application.

[0078] Figure 6 It is a schematic flow chart of the substrate processing method in the embodiment of the present application.

[0079] Description of reference numerals:

[0080] 10. Substrate processing device;

[0081] 100, retainer; 110, connecting plate; 120, chuck; 200, processing container; 201, first cavity; 202, second cavity; 210, support member; 300, first heater; 310, heating unit; 400, liquid temperature control unit; 510, liquid input unit; 520, liquid discharge unit; 610, gas input assembly; 620, gas output assembly; 700, vibrator.

[0082] 20. Substrate; 31. Pattern; 32. Pattern gap; 40. Substrate treatment liquid. DETAILED DESCRIPTION

[0083] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this application will be more comprehensive and complete and fully convey the concept of the example embodiments to those skilled in the art.

[0084] In addition, described feature, structure or characteristic can be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present application. However, those skilled in the art will appreciate that the technical scheme of the present application can be put into practice without one or more of the specific details, or other methods, components, devices, steps, etc. can be adopted. In other cases, known methods, devices, realizations or operations are not shown or described in detail to avoid blurring the various aspects of the application.

[0085] The present application is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the technical features involved in the various embodiments of the present application described below can be combined with each other as long as they do not conflict with each other. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present application, and should not be understood as limiting the present application.

[0086] See also Figure 1 As shown, in this embodiment, the substrate processing device 10 includes a holder 100, a processing container 200, a first heater 300 and a control unit (not shown). The holder 100 is used to hold the substrate 20 horizontally or approximately horizontally. The substrate 20 includes, for example, a wafer for making an integrated circuit and a base substrate for making a display panel, etc., which is not specifically limited in this application.

[0087] The processing container 200 includes a first cavity 201 for accommodating a substrate 20 and a substrate treatment liquid 40. The substrate treatment liquid 40 may be a volatile cleaning liquid. For example, the substrate treatment liquid 40 includes deionized water, isopropyl alcohol, ethanol, etc., but is not limited thereto, depending on the specific situation. The holder 100 may be disposed in the inner cavity of the processing container 200, and the first cavity 201 is the inner cavity of the processing container 200 or a part of the inner cavity of the processing container 200. The first cavity 201 accommodates the substrate 20 and the substrate treatment liquid 40 on the substrate 20, that is, the first cavity 201 includes the inner cavity of the processing container 200 located above the lowest contact position between the holder 100 and the substrate 20, and the inner cavity of the processing container 200 located below the lowest contact position between the holder 100 and the substrate 20 is the second cavity 202 of the processing container 200. However, it is not limited thereto, and the inner cavity of the processing container 200 located below the holder 100 may also be the second cavity 202 of the processing container 200.

[0088] The holder 100 can be detachably sealed and connected to the side of the substrate 20 and / or the area of ​​the back of the substrate 20 close to the side of the substrate 20 to prevent the substrate processing liquid 40 from flowing under the substrate 20, ensuring that there is no substrate processing liquid 40 under the substrate 20 during the processing of the substrate 20. The depth of the first cavity 201 is greater than the thickness of the substrate 20, ensuring that when the substrate processing liquid 40 is provided to the front of the substrate 20, the liquid level of the substrate processing liquid 40 can be higher than the front of the substrate 20.

[0089] The first heater 300 may be disposed on the back side of the substrate 20 held by the holder 100. For example, the first heater 300 may be disposed in the second cavity 202. The first heater 300 is used to emit electromagnetic waves from the back side of the substrate 20 to the substrate processing liquid 40, and the wavelength of the electromagnetic waves is configured to be able to pass through the substrate 20 to heat the substrate processing liquid 40, and the control unit is used to control the operation of the first heater 300. It can be understood that the control unit is used to control the operation of the first heater 300, including that the control unit can at least control the switch of the first heater 300 to achieve that the part of the substrate processing liquid 40 close to the substrate 20 is heated and vaporized to generate bubbles. Optionally, the control unit can control the irradiation illumination of the first heater 300, and then control the bubble size and bubble generation speed, so as to achieve the purpose of the bubble tension offsetting the surface tension of the substrate processing liquid 40.

[0090] It should be noted that the first heater 300 can be arranged on the back side of the substrate 20 held by the holder 100, but is not limited thereto. The first heater 300 can also be movably mounted on the processing container 200, and the first heater 300 can be moved to the front, back or side of the substrate 20, depending on the specific situation. The processing container 200 may also include a sealing door (not shown), and the sealing door can be opened to move the unprocessed substrate 20 into the first chamber 201. The sealing door is closed during the processing of the substrate 20, and the sealing door can be opened after the processing is completed to move the substrate 20 out of the first chamber 201.

[0091] It should also be noted that the wavelength of the electromagnetic wave is configured to be able to pass through the substrate 20 to heat the substrate processing liquid 40, including the substrate processing liquid 40 having a higher absorption rate of the electromagnetic wave than the substrate 20, for example, 40%, 50%, 60%, 70%, 80%, 85%, 90%, 95%, etc., depending on the specific situation. The substrate 20 dried using the substrate processing apparatus 10 may include a pattern 31 located on the front side of the substrate 20, such as Figure 2 As shown, the present application does not specifically limit the substrate 20 to be dried, and the front side of the substrate 20 may also be patternless, depending on the specific situation. Figure 2 As shown, after cleaning the substrate 20, substrate processing liquid 40 remains in the pattern gaps 32 on the surface of the substrate 20, and the surface tension of the substrate processing liquid 40 applies a pulling force to the pattern 31. In the process of drying the surface of the substrate 20, due to the uneven height of the residual substrate processing liquid 40 in the pattern gaps 32 and the uneven drying speed of the surface of the substrate 20, the pulling force generated by the surface tension of the substrate processing liquid 40 in the pattern gaps 32 on both sides of the pattern 31 is also different, resulting in a greatly increased risk of deformation or collapse of the fine pattern 31 during the drying process, which in turn leads to a significant decrease in product yield.

[0092] In this embodiment, the substrate processing device 10 includes a holder 100, a processing container 200, a first heater 300 and a control unit. The holder 100 is used to hold the substrate 20 horizontally. The processing container 200 includes a first cavity 201 for accommodating the substrate 20 and the substrate processing liquid 40. The depth of the first cavity 201 is greater than the thickness of the substrate 20. The first heater 300 is used to emit electromagnetic waves from the back of the substrate 20 to the substrate processing liquid 40. The wavelength of the electromagnetic wave is configured to be able to pass through the substrate 20 to heat the substrate processing liquid 40. The control unit is used to control the operation of the first heater 300. At least the control unit can control the switch of the first heater 300, thereby enabling the portion of the substrate processing liquid 40 close to the substrate 20 to be heated and vaporized to generate bubbles. The control unit can also be configured to control the radiant illumination of the first heater 300, thereby controlling the size and generation speed of the bubbles. The substrate processing liquid 40 is heated by the first heater 300, so that the portion of the substrate processing liquid 40 close to the substrate 20 is vaporized to generate bubbles. The tension of the bubbles offsets the pulling force generated by the surface tension of the substrate processing liquid 40, such as Figure 3 and Figure 4 As shown, the risk of deformation or collapse of the fine pattern 31 during the drying process is reduced, and the product yield is improved.

[0093] In some embodiments, the wavelength of the electromagnetic wave emitted by the first heater 300 is 1 μm to 1000 μm.

[0094] When the substrate 20 is a wafer for making integrated circuits, the material of the substrate 20 is usually silicon. The substrate processing liquid 40 used in the cleaning step before the substrate 20 is dried, that is, the substrate processing liquid 40 that needs to be evaporated in the drying step is usually deionized water, isopropyl alcohol, ethanol, etc. Electromagnetic waves with a wavelength of 1μm to 1000μm are not absorbed by silicon. Therefore, the electromagnetic waves emitted by the first heater 300 can pass through the silicon substrate 20, and a wavelength range with a higher absorption rate can be selected for different substrate processing liquids 40, thereby achieving direct heating of substrate processing liquids 40 such as deionized water, isopropyl alcohol, ethanol, etc.

[0095] It should be understood that the wavelength of the electromagnetic wave emitted by the first heater 300 is not limited to 1 μm to 1000 μm, and can be specifically set according to the material of the substrate 20 and the substrate processing liquid 40 used. For example, the wavelength of the electromagnetic wave emitted by the first heater 300 can be controlled and adjusted by the control unit, so that the substrate processing device 10 can process the substrate 20 when the substrate 20 is made of different materials and the substrate processing liquid 40 has different components.

[0096] In some embodiments, the first heater 300 is a pulse heater, and the first heater 300 can pulse heat the substrate processing liquid 40. For example, the first heater 300 alternately heats the substrate processing liquid 40 with the first radiation illumination I1 or the second radiation illumination I2. Figure 4 As shown. The control unit can control the magnitude of the first radiant illuminance I1 and the second radiant illuminance I2, the length of the period T, and the ratio of the first radiant illuminance I1 and the second radiant illuminance I2 within one period T. The first radiant illuminance I1 is greater than or equal to 0, the second radiant illuminance I2 is greater than 0, and the length of the period T is 1μs to 10s.

[0097] The control unit controls the operation of the first heater 300, including controlling the overall radiation illuminance of the first heater 300 by controlling the size of the first radiation illuminance I1 and the second radiation illuminance I2, the length of the period T, and at least one of the ratio of the first radiation illuminance I1 and the second radiation illuminance I2 within a period T, thereby controlling the size and generation speed of the bubbles.

[0098] It should be noted that the first heater 300 alternately heats the substrate processing liquid 40 with the first radiant illuminance I1 or the second radiant illuminance I2, and the waveform of the radiant illuminance changing with time is a square wave, but is not limited to this. The waveform of the radiant illuminance changing with time can also be other waveforms such as a sine wave, and the radiant illuminance changing with time can also be a monotonic curve, which can be determined according to the specific situation. Optionally, the heating speed of the substrate processing liquid 40 can be adjusted by adjusting the radiant illuminance of the first heater 300, but is not limited to this, and can be adjusted in a variety of ways, such as the wavelength of the electromagnetic wave emitted by the first heater 300.

[0099] It should also be noted that the electromagnetic waves emitted by the first heater 300 have alternating first radiation illuminance I1 and second radiation illuminance I2 to achieve pulse heating, but it is not limited thereto, and pulse heating can also be achieved by shielding or exposing the heater, which can be determined according to the specific situation. To achieve pulse heating by shielding or exposing the heater, a shutter can be set between the first heater 300 and the holder 100, and the shutter can be closed to shield or grayscale shield the first heater 300, and the shutter can be opened to expose the first heater 300.

[0100] In some embodiments, the first heater 300 includes a plurality of heating units 310 , and different heating units 310 are used to heat the substrate processing liquid 40 above different regions of the substrate 20 . The control unit controls the radiation illuminance of different heating units 310 to be the same or different.

[0101] The film thickness, graphic density and morphology of different areas on the substrate 20 may be different. The substrate 20 may also be warped, resulting in differences in the amount of substrate processing liquid 40 located above different areas of the substrate 20. The energy required to heat the substrate processing liquid 40 in different areas will vary accordingly. When the control unit is able to control the radiation illuminance of different heating units 310 to be the same or different, the radiation illuminance of the corresponding heating unit 310 can be adjusted according to the film thickness, graphic density, morphology and warping degree of different areas on the substrate 20, so that the evaporation rate of the substrate processing liquid 40 is adapted to the film thickness, graphic density, morphology and warping degree of different areas of the substrate 20, thereby avoiding the collapse of the pattern 31.

[0102] The parameters such as the wavelength of the electromagnetic wave emitted by the first heater 300, the waveform of the radiant illuminance of the electromagnetic wave emitted, and the overall radiant illuminance can be adjusted by the control unit, but are not limited thereto. The adjustment of the above parameters can also be achieved by replacing the first heater 300, depending on the specific situation. In addition, by replacing the first heater 300, the adjustment range of the wavelength of the electromagnetic wave and the waveform of the radiant illuminance for heating the substrate processing liquid 40 can also be increased or decreased. When the first heater 300 includes a plurality of heating units 310, the parameters such as the wavelength of the electromagnetic wave emitted by different heating units 310, the waveform of the radiant illuminance of the electromagnetic wave emitted, and the overall radiant illuminance can be adjusted by the control unit or by replacing the heating unit 310.

[0103] See also Figure 1 As shown, the substrate processing device 10 further includes a liquid temperature control unit 400 , which includes a second heater and a first temperature sensor. The first temperature sensor is used to detect the temperature of the substrate processing liquid 40 , and the second heater is used to heat the substrate processing liquid 40 .

[0104] When using the substrate processing device 10 to dry the substrate 20, the substrate 20 is first moved into the first cavity 201 and placed horizontally on the holder 100, and then the substrate processing liquid 40 is provided to the front of the substrate 20, the temperature of the substrate processing liquid 40 is equal to a first preset value, the first preset value is 1°C to 10°C lower than the boiling point of the substrate processing liquid 40, the liquid level position of the substrate processing liquid 40 is a second preset value, and the second preset value is equal to or higher than the front of the substrate 20, and then the electromagnetic wave is emitted from the back of the substrate 20 through the first heater 300 to pass through the substrate 20 to heat the part of the substrate processing liquid 40 close to the substrate 20, so that the part of the substrate processing liquid 40 close to the substrate 20 is vaporized to generate bubbles, and as the bubbles are continuously generated and rise, the substrate processing liquid 40 on the front of the substrate 20 is continuously evaporated until the surface of the substrate 20 is dry, and the temperature of the substrate processing liquid 40 is maintained not lower than the first preset value during the drying process. When using the substrate processing device 10 to dry the substrate 20, the first preset value is set to be 1°C to 10°C lower than the boiling point of the substrate processing liquid 40. This can shorten the drying time and reduce the difficulty of controlling the bubble generation speed and size, that is, reduce the difficulty of controlling the radiation illumination of the first heater 300 and reduce the risk of collapse of the pattern 31.

[0105] When providing the substrate processing liquid 40 to the front of the substrate 20, the substrate processing liquid 40 with a temperature lower than the first preset value can be provided to the front of the substrate 20 first. Before the first heater 300 emits electromagnetic waves to heat the substrate processing liquid 40, the first temperature sensor detects the temperature of the substrate processing liquid 40. If the temperature of the substrate processing liquid 40 is lower than the first preset value, the substrate processing liquid 40 in the first cavity 201 is heated by the second heater. During the heating process of the second heater, the first temperature sensor detects the temperature of the substrate processing liquid 40. When the temperature of the substrate processing liquid 40 is equal to the first preset value, the second heater stops heating. Therefore, the substrate processing device 10 further includes a liquid temperature control unit 400, which can reduce the temperature requirement of the substrate processing liquid 40 input to the first cavity 201, and can reliably provide the substrate processing liquid 40 with a temperature of the first preset value.

[0106] Optionally, in the process of heating the substrate processing liquid 40 by emitting electromagnetic waves through the first heater 300, the first temperature sensor also detects the temperature of the substrate processing liquid 40. When the temperature of the substrate processing liquid 40 is lower than the first preset value, the second heater heats the substrate processing liquid 40. When the temperature of the substrate processing liquid 40 is equal to the first preset value, the second heater stops heating. Therefore, the substrate processing device 10 also includes a liquid temperature control unit 400, which can maintain the temperature of the substrate processing liquid 40 not lower than the first preset value during the drying process.

[0107] The second heater may be a contact heater, which may be disposed on the side wall of the processing container 200 surrounding the holder 100, at least part of the second heater is located in the first cavity 201, the substrate processing liquid 40 may contact the part of the second heater located in the first cavity 201, and the second heater generates heat to heat the substrate processing liquid 40. The second heater may also be disposed on the top of the processing container 200 opposite to the front of the substrate 20, and the second heater emits electromagnetic waves to heat the substrate processing liquid 40. In addition, the second heater may also be movably mounted on the processing container 200, the second heater may be moved to the front, back or side of the substrate 20, or the second heater may be a movably mounted first heater 300.

[0108] In some embodiments, the liquid temperature control unit 400 is configured as:

[0109] When the temperature of the substrate processing liquid 40 detected by the first temperature sensor is lower than a first preset value, the second heater heats the substrate processing liquid 40;

[0110] When the temperature of the substrate treating liquid 40 detected by the first temperature sensor is equal to or higher than a first preset value, the second heater stops heating the substrate treating liquid 40 .

[0111] The liquid temperature control unit 400 can independently control the temperature of the substrate processing liquid 40. Before the first heater 300 works, the temperature of the substrate processing liquid 40 (the temperature is the first preset value) is maintained close to the boiling point of the substrate processing liquid 40, which can make the area of ​​the substrate processing liquid 40 close to the substrate 20 more easily vaporized and generate bubbles under the heating of the first heater 300, and can also prevent the second heater from directly heating the substrate processing liquid 40 to boiling, resulting in an increased risk of deformation or collapse of the fine pattern 31 during the drying process. The liquid temperature control unit 400 can also independently maintain the temperature of the substrate processing liquid 40 not lower than the first preset value during the drying process.

[0112] In some embodiments, the second heater and the first temperature sensor are both connected to a control unit, and the control unit is configured to:

[0113] When the temperature of the substrate processing liquid 40 detected by the first temperature sensor is lower than a first preset value, the control unit controls the second heater to heat the substrate processing liquid 40;

[0114] When the temperature of the substrate treating liquid 40 detected by the first temperature sensor is equal to or higher than a first preset value, the control part controls the second heater to stop heating the substrate treating liquid 40 .

[0115] The temperature of the substrate processing liquid 40 is controlled by connecting the second heater and the first temperature sensor of the liquid temperature control unit 400 via the control unit. Compared with the solution of independently controlling the temperature through the liquid temperature control unit 400, the structure of the liquid temperature control unit 400 can be simplified, the manufacturing cost of the substrate processing device 10 can be reduced, and centralized control of different components in the substrate processing device 10 can be achieved.

[0116] In some embodiments, the control unit is used to control the first heater 300 to work including:

[0117] When the temperature of the substrate treating liquid 40 detected by the first temperature sensor is equal to or higher than a first preset value, the control part controls the first heater 300 to heat the substrate treating liquid 40 .

[0118] Thus, the control unit of the substrate processing apparatus 10 can realize that after the second heater heats the substrate processing liquid 40 to a point close to the boiling point, the first heater 300 is automatically turned on to heat the area of ​​the substrate processing liquid 40 close to the substrate 20 .

[0119] When using the substrate processing device 10 to dry the substrate 20, it is preferred to first provide a substrate processing liquid 40 having a temperature lower than a first preset value to the front side of the substrate 20, and heat the substrate processing liquid 40 in the first cavity 201 by the second heater. During the heating process of the second heater, the first temperature sensor detects the temperature of the substrate processing liquid 40. When the temperature of the substrate processing liquid 40 is equal to the first preset value, the second heater stops heating, and the first heater 300 starts to heat the area of ​​the substrate processing liquid 40 close to the substrate 20. During the heating process of the first heater 300, the temperature of the substrate processing liquid 40 rises and is higher than the first preset value. The first heater 300 continues to heat the substrate processing liquid 40 until the substrate processing liquid 40 is completely evaporated and the substrate 20 is dried.

[0120] In some embodiments, the substrate processing apparatus 10 further includes a liquid level sensor (not shown), the liquid level sensor is used to detect the liquid level position of the substrate processing liquid 40 in the first chamber 201, the liquid level sensor, the second heater and the first temperature sensor are all connected to the control unit, and the control unit is configured to: confirm that the liquid level sensor detects that the liquid level position of the substrate processing liquid 40 reaches a second preset value and then start to perform the heating step, and the second preset value is equal to or higher than the front side of the substrate 20;

[0121] The heating steps include:

[0122] When the first temperature sensor detects that the temperature of the substrate processing liquid 40 is lower than a first preset value, controlling the second heater to heat the substrate processing liquid 40;

[0123] When the temperature of the substrate processing liquid 40 detected by the first temperature sensor is equal to or higher than the first preset value, the second heater is controlled to stop heating the substrate processing liquid 40 , and the first heater 300 is controlled to heat the substrate processing liquid 40 .

[0124] Therefore, the substrate processing device 10 includes a control unit, which can automatically turn on the second heater to heat the substrate processing liquid 40 to a temperature close to the boiling point (first preset temperature) after the liquid level position reaches the second preset value, and then automatically turn on the first heater 300 to heat the area of ​​the substrate processing liquid 40 close to the substrate 20.

[0125] In some embodiments, the liquid level sensor detecting that the liquid level position reaches the second preset value includes that the liquid level sensor detecting that the liquid level position drops to the second preset value. Thus, when using the substrate processing device 10 to dry the substrate 20, the process of introducing the substrate processing liquid 40 into the first chamber 201 may include the following steps: introducing the substrate processing liquid 40 until the liquid level position is higher than the second preset value, discharging part of the substrate processing liquid 40 until the liquid level position is equal to the second preset value, that is, the liquid level sensor can detect that the liquid level position drops to the second preset value, and then starting the heating step. Thus, the accuracy of the liquid level control before the start of the heating step can be improved, and the stability of the step of heating and drying the substrate processing liquid 40 can be improved.

[0126] It should be noted that the second heater can heat the substrate processing liquid 40 again when the liquid level drops to the second preset value, but is not limited thereto. The second heater can also heat the substrate processing liquid 40 when the liquid level rises to the second preset value, and maintain the temperature of the substrate processing liquid 40 less than or equal to the first preset value. When the liquid level drops to the second preset value, the substrate processing liquid 40 continues to be heated until its temperature is equal to the first preset value or maintains its temperature equal to the first preset value, depending on the specific situation. The second heater heats the substrate processing liquid 40 when the liquid level rises to the second preset value, which can shorten the heating time and improve the processing efficiency of the substrate 20.

[0127] See also Figure 1 As shown, the substrate processing apparatus 10 further includes a liquid input portion 510 and a liquid discharge portion 520. The liquid input portion 510 is used to introduce the substrate processing liquid 40 into the first chamber 201, and the liquid discharge portion 520 is used to discharge part of the substrate processing liquid 40 in the first chamber 201. The liquid input portion 510 may include a liquid spraying device, and the liquid spraying device may be disposed at the top of the processing container 200 facing the center of the substrate 20.

[0128] The substrate processing liquid 40 is sprayed on the surface of the substrate 20 so that the liquid level of the substrate processing liquid 40 is equal to or slightly higher than the front surface of the substrate 20, and then the substrate processing liquid 40 is heated by the first heater 300 to vaporize the substrate processing liquid 40.

[0129] It can be understood that spraying the substrate processing liquid 40 on the surface of the substrate 20 can be a step in the cleaning process of the substrate 20, or a step in the drying of the substrate 20, that is: in some embodiments, the substrate processing device 10 can be used to clean and dry the substrate 20, and the cleaning liquid provided when the substrate 20 is cleaned for the last time is the substrate processing liquid 40; in some embodiments, the substrate processing device 10 can be used to clean and dry the substrate 20, and the substrate 20 is dried after the cleaning is completed, and drying the substrate 20 includes providing the substrate processing liquid 40 until the liquid level of the substrate processing liquid 40 is equal to or slightly higher than the front of the substrate 20, and then heating the substrate processing liquid 40 to vaporize the substrate processing liquid 40; in some embodiments, the substrate processing device 10 can be used to dry the substrate, and after the cleaning is completed, the substrate 20 is transferred to the substrate processing device 10 for drying, and drying the substrate 20 includes providing the substrate processing liquid 40 until the liquid level of the substrate processing liquid 40 is equal to or slightly higher than the front of the substrate 20, and then heating the substrate processing liquid 40 to vaporize the substrate processing liquid 40, but is not limited to this, and can be determined according to specific circumstances.

[0130] It should be noted that the liquid input part 510 can be set on the top of the processing container 200, and the substrate processing liquid 40 is sprayed on the surface of the substrate 20, but it is not limited to this. The liquid input part 510 can also include a channel structure located on the side wall of the processing container to achieve the introduction of the substrate processing liquid 40 from the side wall of the processing container 200, which can be determined according to the specific situation.

[0131] When the substrate processing device 10 is used, the substrate 20 is first moved into the first cavity 201 and horizontally placed on the holder 100, and then the substrate processing liquid 40 is introduced through the liquid input part 510. Optionally, after an excess amount of substrate processing liquid 40 is introduced through the liquid input part 510, part of the substrate processing liquid 40 in the first cavity 201 is discharged through the liquid discharge part 520, so that the liquid level of the substrate processing liquid 40 before drying is equal to or slightly higher than the front surface of the substrate 20, and after the temperature of the substrate processing liquid 40 is equal to the first preset value, the substrate processing liquid 40 is heated by the first heater 300 to evaporate.

[0132] In some embodiments, the substrate processing device 10 further includes a liquid level sensor, which is used to detect the liquid level position of the substrate processing liquid 40 in the first cavity 201. The liquid level sensor is used to detect the liquid level position of the substrate processing liquid 40 in the first cavity 201, so that the liquid level of the substrate processing liquid 40 before drying is equal to or slightly higher than the front surface of the substrate 20, and the liquid level position of the substrate processing liquid 40 is controlled more accurately. Therefore, the opening and closing of the liquid input part 510 and the liquid discharge part 520 can be controlled based on the liquid level position detected by the liquid level sensor, thereby achieving accurate control of the liquid level position.

[0133] In some embodiments, the liquid discharge portion 520 is configured as:

[0134] When the liquid level of the substrate processing liquid 40 in the first chamber 201 detected by the liquid level sensor is higher than a second preset value, the liquid discharge portion 520 is opened to discharge the liquid;

[0135] When the liquid level of the substrate treating liquid 40 in the first chamber 201 detected by the liquid level sensor is equal to or lower than the second preset value, the liquid discharge portion 520 is closed.

[0136] The liquid discharge portion 520 can independently control the liquid level, so that before the first heater 300 works, the liquid level position of the substrate processing liquid 40 is equal to or slightly higher than the front side of the substrate 20, that is, the liquid level position is equal to the second preset value, so that the liquid level of the substrate processing liquid 40 is not too low, resulting in the surface tension of the substrate processing liquid 40 on the substrate 20 causing the fine pattern 31 to deform or collapse, and the liquid level of the substrate processing liquid 40 is not too high, resulting in reduced drying efficiency of the substrate 20.

[0137] In some embodiments, the liquid level sensor and the liquid discharge unit 520 are both connected to a control unit, and the control unit is configured to:

[0138] When the liquid level of the substrate processing liquid 40 in the first chamber 201 detected by the liquid level sensor is higher than a second preset value, the control unit controls the liquid discharge unit 520 to start discharging liquid;

[0139] When the liquid level of the substrate processing liquid 40 in the first chamber 201 detected by the liquid level sensor is equal to or lower than a second preset value, the control unit controls the liquid discharge unit 520 to stop discharging liquid.

[0140] By connecting the liquid level sensor and the liquid discharge unit 520 through the control unit, the liquid level position of the substrate processing liquid 40 can be controlled. Compared with the solution of independently controlling the liquid level position through the liquid discharge unit 520, the structure of the liquid discharge unit 520 can be simplified, the manufacturing cost of the substrate processing device 10 can be reduced, and centralized control of different components in the substrate processing device 10 can be achieved.

[0141] Optionally, the liquid input part 510 is also connected to the control part, and the control part can control the opening and closing of the liquid input part 510, so as to control the liquid input part 510 to input the substrate processing liquid 40 into the first chamber 201. Further, the control part is configured as follows:

[0142] The control unit controls the liquid input unit 510 to open, so as to input the substrate processing liquid 40 into the first chamber 201;

[0143] After the liquid level sensor detects that the liquid level of the substrate processing liquid 40 is higher than the second preset value, the liquid input part 510 is controlled to be closed and the liquid discharge part 520 is controlled to be opened to discharge the liquid;

[0144] When the liquid level position of the substrate processing liquid 40 in the first chamber 201 detected by the liquid level sensor is equal to the second preset value, the liquid discharge portion 520 is closed.

[0145] Thus, the substrate processing device 10 can automatically input the substrate processing liquid 40 and control the liquid level position, improve the accuracy of liquid level control when the second heater heats the substrate processing liquid 40, and improve the stability of the first heater 300 heating and drying the substrate processing liquid 40. It can be understood that the second heater works after the substrate processing liquid 40 is input and the liquid level position is controlled for the second preset value, and when the second heater heats the substrate processing liquid 40 to the first preset value, the first heater 300 starts to work.

[0146] See also Figure 1 As shown, the substrate processing device 10 further includes a gas supply unit, which includes a gas input assembly 610 and a gas output assembly 620 . The gas input assembly 610 is used to introduce gas into the first cavity 201 , and the gas output assembly 620 is used to exhaust the gas in the first cavity 201 .

[0147] During the drying process of the substrate 20, inactive gases such as nitrogen are continuously introduced through the gas input component 610 to reduce the risk of contamination of the substrate 20, and the steam formed by the vaporization of the substrate processing liquid 40 in the first cavity 201 can be removed through the gas output component 620 using gas pressure to improve the drying efficiency.

[0148] In some embodiments, the gas supply unit further includes a gas pressure sensor, which is used to detect the gas pressure in the first cavity 201. The gas supply unit is configured as follows:

[0149] When the air pressure in the first cavity 201 measured by the air pressure sensor is lower than a third preset value, the gas input component 610 increases the intake flow rate and / or the gas output component 620 reduces the exhaust flow rate;

[0150] When the air pressure in the first cavity 201 measured by the air pressure sensor is higher than the third preset value, the gas input component 610 reduces the intake flow rate and / or the gas output component 620 increases the exhaust flow rate.

[0151] It should be understood that when the gas input component 610 increases the intake flow rate or the gas output component 620 reduces the exhaust flow rate, the gas pressure in the first cavity 201 increases and the boiling point of the substrate processing liquid 40 also increases; when the gas input component 610 reduces the intake flow rate or the gas output component 620 increases the exhaust flow rate, the gas pressure in the first cavity 201 decreases and the boiling point of the substrate processing liquid 40 also decreases.

[0152] The gas supply unit independently controls the air pressure in the first cavity 201, that is, the gas supply unit adjusts the air intake flow rate of the gas input component 610 and the exhaust flow rate of the gas output component 620 according to the air pressure in the first cavity 201 measured by the air pressure sensor, and controls the air pressure in the first cavity 201, which can control the boiling point of the substrate processing liquid 40, thereby controlling the speed of bubble generation. At the same time, by controlling the air pressure in the first cavity 201, the size of the bubbles and the supporting force of the bubbles on the pattern 31 can also be controlled.

[0153] In some embodiments, the air pressure sensor, the gas input assembly 610 and the gas output assembly 620 are all connected to the control unit, and the gas supply unit is configured as follows:

[0154] When the air pressure in the first cavity 201 measured by the air pressure sensor is lower than a third preset value, the control unit controls the gas input component 610 to increase the intake flow rate and / or the control unit controls the gas output component 620 to reduce the exhaust flow rate;

[0155] When the air pressure in the first cavity 201 measured by the air pressure sensor is higher than the third preset value, the control unit controls the gas input component 610 to reduce the intake flow rate and / or controls the gas output component 620 to increase the exhaust flow rate.

[0156] The air pressure sensor, the gas input assembly 610 and the gas output assembly 620 are connected via the control unit to control the air pressure in the first cavity 201. Compared with the solution of independently controlling the air pressure in the first cavity 201 through the gas supply unit, the structure of the gas supply unit can be simplified, the manufacturing cost of the substrate processing device 10 can be reduced, and centralized control of different components in the substrate processing device 10 can be achieved.

[0157] In some embodiments, the gas supply unit includes a second temperature sensor and a third heater, the second temperature sensor is used to detect the gas temperature in the first cavity 201 , and the third heater is used to heat the gas introduced into the first cavity 201 by the gas input assembly 610 before the gas enters the first cavity 201 .

[0158] Before the gas is introduced into the first cavity 201, the gas can be heated by the third heater based on the gas temperature in the first cavity 201 detected by the second temperature sensor, so that the gas temperature in the first cavity 201 can be controlled to be stable, reducing the difficulty of controlling the gas pressure in the first cavity 201, and avoiding excessive difference between the gas temperature and the temperature of the substrate processing liquid 40, which causes large fluctuations in the temperature of the substrate processing liquid 40 and has an adverse effect on controlling the size and generation speed of the bubbles.

[0159] In addition, when the substrate processing device 10 is used, the substrate 20 is first moved into the first cavity 201 and placed horizontally on the holder 100, and then the substrate processing liquid 40 having a temperature equal to the first preset value and a liquid level position of the second preset value is provided to the front of the substrate 20, and the second preset value is equal to or higher than the front of the substrate 20, and then the first heater 300 emits electromagnetic waves to heat the substrate for processing until the surface of the substrate 20 is dried. During the drying process of the surface of the substrate 20, the liquid level of the substrate processing liquid 40 on the substrate 20 decreases with evaporation, and when the amount of the remaining substrate processing liquid 40 is small and insufficient to form bubbles that can support the pattern 31 during the vaporization process, the third heater heats the gas and passes the gas into the first cavity 201 to quickly dry the surface of the substrate 20.

[0160] Preferably, before the substrate processing liquid 40 on the surface of the substrate 20 is completely evaporated, the first heater 300 can continue to heat, and the remaining substrate processing liquid 40 in the first chamber 201 is dried by hot air and the first heater 300 .

[0161] In some embodiments, the gas supply is configured to:

[0162] When the gas temperature in the first cavity 201 measured by the second temperature sensor is lower than a fourth preset value, the third heater heats the gas input assembly 610 to pass the gas into the first cavity 201, and the fourth preset value is less than or equal to the first preset value;

[0163] When the gas temperature in the first cavity 201 measured by the second temperature sensor is equal to or higher than a fourth preset value, the third heater stops heating or reduces the heating power.

[0164] The gas supply unit independently controls the gas temperature in the first cavity 201, that is, the gas supply unit controls the third heater to heat or stop heating according to the gas temperature in the first cavity 201 measured by the second temperature sensor, thereby controlling the gas temperature in the first cavity 201, so that the gas temperature in the first cavity 201 can be stabilized.

[0165] In some embodiments, the second temperature sensor and the third heater are both connected to a control unit, and the control unit is configured to:

[0166] When the gas temperature in the first cavity 201 measured by the second temperature sensor is lower than a fourth preset value, the control unit controls the third heater to heat the gas input assembly 610 to pass the gas into the first cavity 201;

[0167] When the gas temperature in the first cavity 201 measured by the second temperature sensor is equal to or higher than a fourth preset value, the control unit controls the third heater to stop heating or reduce the heating power.

[0168] The second temperature sensor and the third heater are connected via the control unit to control the gas temperature in the first cavity 201. Compared with a solution in which the gas temperature in the first cavity 201 is independently controlled by the gas supply unit, the structure of the gas supply unit can be simplified, the manufacturing cost of the substrate processing device 10 can be reduced, and centralized control of different components in the substrate processing device 10 can be achieved.

[0169] See also Figure 1 As shown, the substrate processing device 10 further includes a vibrator 700, which can apply vibration to the substrate processing liquid 40. The vibrator 700 can be arranged on the holder 100 or on the processing container 200. The vibrator 700 can directly contact and vibrate the substrate processing liquid 40, or can indirectly vibrate the substrate processing liquid 40 by vibrating the substrate 20. The vibration frequency of the vibrator 700 is 10kHz to 3MHz. It should be understood that the purpose of the vibration of the vibrator 700 is to promote the rise of bubbles formed by the vaporization of the substrate processing liquid 40 during the heating of the substrate processing liquid 40 by the first heater 300, and the selection of the vibration frequency and amplitude of the vibrator 700 is based on the rise of bubbles. Preferably, the vibration frequency and amplitude of the vibrator 700 are adjustable. Further, the vibrator 700 is connected to the control unit, and the control unit can at least control the switch of the vibrator 700. Optionally, the vibration frequency and amplitude of the vibrator 700 can also be controlled by the control unit.

[0170] The vibrator 700 applies vibration to the substrate processing liquid 40 , which can cause the bubbles generated by the vaporization of the substrate processing liquid 40 near the substrate 20 to rise, which is beneficial to control the size and generation speed of the bubbles.

[0171] In some embodiments, the vibrator 700 may be turned on during the process of heating the substrate processing liquid 40 by the first heater 300, but the present invention is not limited thereto and depends on the specific situation. Alternatively, the vibrator 700 may be turned on during the process of adding the substrate processing liquid 40, so that the substrate processing liquid 40 can completely fill the pattern gap 32, thereby preventing the presence of unexhausted gas in the pattern gap 32 and affecting the drying process.

[0172] See also Figure 1As shown, the holder 100 includes a connecting plate 110 and a chuck 120, the connecting plate 110 is disposed in the processing container 200, and optionally, the processing container 200 below the lower surface of the connecting plate 110 forms a second cavity 202, and the connecting plate 110 is sealed and connected to the processing container 200. The material of the connecting plate 110 includes a highly light-transmitting material such as glass. It can be understood that the material of the connecting plate 110 allows the electromagnetic waves emitted by the first heater 300 to have a high transmittance, for example, a transmittance greater than 90%. The connecting plate 110 is connected to the processing container 200, for example, the processing container 200 may further include a support member 210 protruding toward the inside of the processing container 200, and the support member 210 is used to support the connecting plate 110. Optionally, the support member 210 can be sealed and connected to the connecting plate 110.

[0173] It should be noted that the connection between the connecting plate 110 and the processing container 200 can be a fixed connection or a detachable connection, and the present application does not limit the specific connection method. The chuck 120 is arranged on the connecting plate 110, and the chuck 120 is used to clamp the substrate 20. The first cavity 201 includes the part of the inner cavity of the processing container 200 located above the lowest contact position between the retainer 100 and the substrate, that is, the first cavity 201 includes the part of the inner cavity of the processing container 200 located above the lowest contact position between the chuck 120 and the substrate. The side of the substrate 20 and / or the back of the substrate 20 are close to the side of the substrate 20 and are detachably sealed and connected with the chuck 120 to prevent the substrate processing liquid 40 from flowing under the substrate 20, so that there is no substrate processing liquid 40 on the back of the substrate 20 during the processing of the substrate 20.

[0174] When the chuck 120 holds the substrate 20, the vibrator 700 may be in contact with the substrate 20, and thus may indirectly vibrate the substrate treating liquid 40 by vibrating the substrate 20. By way of example, the vibrator 700 may be disposed on the connection plate 110.

[0175] The retainer 100 includes a connecting plate 110, which is made of a highly light-transmitting material such as glass, which can reduce the impact of the connecting plate 110 on the first heater 300 heating the substrate processing liquid 40, but is not limited to this. In some embodiments, the retainer 100 includes a chuck 120 but does not include the connecting plate 110. The chuck 120 can be set on the support member 210, depending on the specific situation, as long as the retainer 100 can be detachably sealed and connected to the side of the substrate 20 and / or the back of the substrate 20 close to the side of the substrate 20 to prevent the substrate processing liquid 40 from flowing under the substrate 20.

[0176] In some implementation examples, the control unit can be programmed to implement any parameter adjustment and control process disclosed above, the parameter adjustment includes the wavelength of the electromagnetic wave emitted by the first heater 300 and the waveform of the radiant illumination of the electromagnetic wave, etc., and the control process includes the workflow of comprehensively controlling any components connected to the control unit, such as the first heater 300, the liquid temperature control unit 400, the liquid input unit 510, the liquid discharge unit 520, the gas input assembly 610, the gas output assembly 620 and the vibrator 700. The control unit may include a user interface capable of inputting parameters and programming instructions, and the parameter adjustment range and the control process can be modified through the user interface.

[0177] In some implementation examples, the substrate processing apparatus 10 includes a control unit, and the control units of multiple substrate processing apparatuses 10 may be connected or multiple substrate processing apparatuses 10 may share the control unit. The control unit may be connected to a host system of a fab (FAB) or the control unit may be part of the host system.

[0178] The present application also provides a substrate processing method, which can be used for the substrate processing apparatus 10 disclosed above to process the substrate 20, but is not limited to the substrate processing apparatus 10 disclosed above to process the substrate 20. Figure 1 and Figure 6 As shown, the substrate processing method includes:

[0179] S100: Keep the substrate 20 horizontally;

[0180] S200: providing a substrate processing liquid 40 having a temperature equal to a first preset value to the front side of the substrate 20, wherein the liquid level of the substrate processing liquid 40 is not lower than the front side of the substrate 20, and the first preset value is 1°C to 10°C lower than the boiling point of the substrate processing liquid 40;

[0181] S300 : The substrate processing liquid 40 is heated by electromagnetic waves passing through the substrate 20 from the back side of the substrate 20 until the portion of the substrate processing liquid 40 close to the substrate 20 vaporizes to generate bubbles, wherein the first preset value is 1° C. to 10° C. lower than the boiling point of the substrate processing liquid 40 .

[0182] It can be understood that after providing the substrate processing liquid 40 having a temperature equal to the first preset value to the front side of the substrate 20 in step S200, step S300 is executed, so that the temperature of the substrate processing liquid 40 is increased to exceed the first preset value, that is, after providing the substrate processing liquid 40, especially in the process of heating the substrate processing liquid 40 in step S300, the temperature of the substrate processing liquid 40 is not lower than the first preset value.

[0183] See also Figure 2As shown, after cleaning the substrate 20, substrate processing liquid 40 remains in the pattern gap 32 on the surface of the substrate 20. The surface tension of the substrate processing liquid 40 will apply tension to the pattern, causing a greatly increased risk of deformation or collapse of the fine pattern during the drying process, thereby significantly reducing the product yield.

[0184] See also Figure 3 As shown, when processing the substrate 20, the substrate 20 is held horizontally, and then a substrate processing liquid 40 having a temperature equal to a first preset value is provided to the front side of the substrate 20. The first preset value is 1°C to 10°C lower than the boiling point of the substrate processing liquid 40. The liquid level of the substrate processing liquid 40 is not lower than the front side of the substrate 20. The patterns on the surface of the substrate are all immersed in the substrate processing liquid 40. The liquid surface tension on both sides of the pattern has the same effect. The first preset value is close to the boiling point of the substrate processing liquid 40. Then, the substrate processing liquid 40 is heated by passing through the substrate 20 from the back side of the substrate 20 through the substrate 20. The portion of the substrate processing liquid 40 close to the substrate 20 is rapidly vaporized to generate bubbles after being heated. The wavelength of the electromagnetic wave can be configured so that the electromagnetic wave can pass through the substrate 20 without being absorbed by the substrate 20, and the electromagnetic wave can be absorbed by the substrate processing liquid 40, thereby achieving heating of the portion of the substrate processing liquid 40 close to the substrate 20, as shown in FIG. Figure 3 As shown in area B and area C.

[0185] It can be understood that, as the portion of the substrate processing liquid 40 close to the substrate 20 is heated and vaporized, bubbles are continuously generated and rise from the bottom of the substrate processing liquid 40, and the bubbles can exert a supporting force on the pattern. As the drying progresses, the substrate processing liquid 40 evaporates, the liquid level of the substrate processing liquid 40 decreases, and the surface tension of the substrate processing liquid 40 acts on the side wall of the pattern, but the tension of the bubbles can offset the tension generated by the surface tension of the substrate processing liquid 40, such as Figure 4 As shown, the risk of deformation or collapse of fine patterns during the drying process is reduced, and the product yield is improved.

[0186] It can be understood that the temperature of the substrate processing liquid 40 is equal to the first preset value, including the temperature of the substrate processing liquid 40 being 0-5% higher or lower than the first preset value, as long as the temperature of the substrate processing liquid 40 is lower than the boiling point of the substrate processing liquid 40.

[0187] In some embodiments, providing the substrate processing liquid 40 having a temperature equal to a first preset value to the front surface of the substrate 20 includes:

[0188] Provide a substrate processing liquid 40 having a temperature lower than a first preset value to the front surface of the substrate 20 until the liquid level of the substrate processing liquid 40 is not lower than the front surface of the substrate 20;

[0189] The substrate treating liquid 40 is heated until the temperature of the substrate treating liquid 40 is equal to a first preset value.

[0190] It should be noted that heating the substrate processing liquid 40 until the temperature of the substrate processing liquid 40 is equal to the first preset value and heating the substrate processing liquid 40 through the substrate 20 from the back side of the substrate 20 by electromagnetic waves can use the same or different heaters. When the substrate processing method is used in the substrate processing device 10 to process the substrate 20, the first heater 300 is used to heat the substrate processing liquid 40 through the substrate 20 from the back side of the substrate 20, and the second heater is used to heat the substrate processing liquid 40 until the temperature of the substrate processing liquid 40 is equal to the first preset value.

[0191] First, a substrate processing liquid 40 having a temperature lower than a first preset value is provided to the front side of the substrate 20, and then the substrate processing liquid 40 is heated until the temperature of the substrate processing liquid 40 is equal to the first preset value. This can reduce the difficulty of providing the substrate processing liquid 40 and the accuracy of temperature control of the substrate processing liquid 40, reduce the difficulty of controlling the electromagnetic wave irradiation intensity of heating the substrate processing liquid 40 in step S300, and reduce the risk of pattern collapse during the drying process.

[0192] Optionally, providing the substrate processing liquid 40 having a temperature equal to the first preset value to the front side of the substrate 20, and the liquid level of the substrate processing liquid 40 is higher than the front side of the substrate 20, includes first inputting the substrate processing liquid 40 having a temperature lower than the first preset value, until the liquid level of the substrate processing liquid 40 is higher than the second preset value, and the second preset value is not lower than the front side of the substrate 20, and then discharging part of the substrate processing liquid 40 until the liquid level is equal to the second preset value, and then heating the substrate processing liquid 40 until the temperature is equal to the first preset value. In some embodiments, providing the substrate processing liquid 40 having a temperature equal to the first preset value to the front side of the substrate 20, and the liquid level of the substrate processing liquid 40 is higher than the front side of the substrate 20, includes directly inputting the substrate processing liquid 40 having a temperature equal to the first preset value, until the liquid level of the substrate processing liquid 40 is higher than the second preset value, and the second preset value is not lower than the front side of the substrate 20, and then discharging part of the substrate processing liquid 40 until the liquid level is equal to the second preset value.

[0193] In some embodiments, the wavelength of the electromagnetic wave that passes through the substrate 20 from the back side of the substrate 20 to heat the substrate treating liquid 40 is 1 μm to 1000 μm.

[0194] When the substrate 20 is a wafer for making integrated circuits, the material of the substrate 20 is usually silicon. The substrate processing liquid 40 used in the cleaning step before the substrate 20 is dried, that is, the substrate processing liquid 40 that needs to be evaporated in the drying step is usually deionized water, isopropyl alcohol, ethanol, etc. Electromagnetic waves with a wavelength of 1μm to 1000μm are not absorbed by silicon. A wavelength range with a higher absorption rate can be selected for different substrate processing liquids 40, so that the electromagnetic waves emitted by the first heater 300 can pass through the silicon material substrate 20 and directly heat the substrate processing liquid 40 such as deionized water, isopropyl alcohol, ethanol, etc.

[0195] In some embodiments, the electromagnetic wave is a pulsed electromagnetic wave, and the pulsed electromagnetic wave alternately heats the substrate processing liquid 40 with the first radiation illumination I1 or the second radiation illumination I2. Figure 5 shown.

[0196] The substrate processing method includes controlling the size of the first radiation illuminance I1 and the second radiation illuminance I2, the length of the period T, and at least one of the ratio of the first radiation illuminance I1 and the second radiation illuminance I2 within a period T, thereby controlling the overall radiation illuminance of the first heater 300, thereby controlling the size and generation speed of the bubbles.

[0197] In some embodiments, in the process of heating the substrate processing liquid 40 from the back side of the substrate 20 by electromagnetic waves, ultrasonic vibration is applied to the substrate processing liquid 40, and the vibration frequency is 10kHz to 3MHz. When the substrate 20 is processed by the substrate processing device 10 in the substrate processing method, ultrasonic vibration is applied by the vibrator 700, for example, the vibrator 700 directly contacts the substrate processing liquid 40 to apply vibration, or the vibrator 700 applies vibration to the substrate 20 to indirectly apply vibration to the substrate processing liquid 40. Optionally, after the surface of the substrate 20 is dried, the vibrator 700 is turned off.

[0198] In the process of heating the substrate processing liquid 40 from the back side of the substrate 20 by electromagnetic waves, applying ultrasonic vibration to the substrate processing liquid 40 can promote the bubbles formed by the vaporization of the substrate processing liquid 40 to rise, which is beneficial to control the size and generation speed of the bubbles.

[0199] In some embodiments, during the process of heating the substrate processing liquid 40 from the back side of the substrate 20 by electromagnetic waves, gas is provided to the liquid surface of the substrate processing liquid 40, and the gas includes an inactive gas such as nitrogen. When the substrate processing method is used in the substrate processing device 10 to process the substrate 20, the gas is introduced into the first cavity 201 through the gas input component 610, and the gas in the first cavity 201 is discharged through the gas output component 620.

[0200] During the process of treating the substrate 20 with the substrate treating liquid 40 and drying the substrate 20, continuously supplying gas to the liquid surface of the substrate treating liquid 40 can reduce the risk of contamination of the substrate 20 and facilitate the removal of the evaporation of the substrate treating liquid 40 to control the drying speed.

[0201] In some embodiments, the temperature of the gas provided to the liquid surface of the substrate processing liquid 40 is equal to a fourth preset value, the fourth preset value is less than or equal to the first preset value, and the fourth preset value is higher than the freezing point of the substrate processing liquid 40. The temperature of the provided gas may also be higher or lower than the fourth preset value by 0-5%, as long as the temperature of the provided gas is lower than the boiling point of the substrate processing liquid 40.

[0202] By controlling the temperature of the gas provided to the liquid surface of the substrate processing liquid 40, the gas temperature in the first chamber 201 can be stabilized. During the drying process of the surface of the substrate 20, the liquid surface of the substrate processing liquid 40 on the substrate 20 drops with evaporation. When the amount of the remaining substrate processing liquid 40 is small and insufficient to form bubbles that can support the pattern during the vaporization process, providing heated gas can quickly dry the surface of the substrate 20.

[0203] In some embodiments, the substrate processing method further comprises:

[0204] The gas pressure at the liquid surface of the substrate processing liquid 40 is controlled so that the size and generation speed of the bubbles are within a preset range.

[0205] When the substrate processing method is used in a substrate processing device 10 to process a substrate 20, the gas input component 610 can be controlled to increase the intake flow rate or the gas output component 620 can be controlled to reduce the exhaust flow rate, so that the gas pressure in the first chamber 201 increases and the boiling point of the substrate processing liquid 40 increases accordingly; the gas input component 610 can be controlled to reduce the intake flow rate or the gas output component 620 can be controlled to increase the exhaust flow rate, so that the gas pressure in the first chamber 201 decreases and the boiling point of the substrate processing liquid 40 decreases accordingly.

[0206] The boiling point of the substrate processing liquid 40 is related to the gas pressure at the liquid surface. When the gas pressure at the liquid surface increases, the boiling point of the substrate processing liquid 40 increases accordingly. When the gas pressure at the liquid surface decreases, the boiling point of the substrate processing liquid 40 decreases accordingly. By controlling the gas pressure at the liquid surface of the substrate processing liquid 40, the boiling point of the substrate processing liquid 40 can be controlled, thereby controlling the speed of bubble generation. At the same time, the size of the bubbles and the supporting force of the bubbles on the pattern can also be controlled by the gas pressure at the liquid surface.

[0207] It can be understood that the size and generation speed of the bubbles can be adjusted by adjusting at least one of the wavelength of the electromagnetic wave and the waveform of the irradiance of the electromagnetic wave, the pressure and temperature at the liquid surface, and the ultrasonic vibration applied to the substrate processing liquid 40, so that the size and generation speed of the bubbles are within a preset range. The film thickness, pattern density and morphology of different regions on the substrate 20 may be different, and the preset ranges of the size and generation speed of the bubbles of the substrate processing liquid 40 in different regions may be different, so that the evaporation rate of the substrate processing liquid 40 is adapted to the film thickness and morphology of different regions of the substrate 20, so as to avoid pattern collapse.

[0208] The terms "first", "second", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", etc. may explicitly or implicitly include one or more of the feature. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0209] In this application, unless otherwise clearly specified and limited, the terms "assembly", "connection" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0210] In the description of this specification, the description with reference to the terms "some embodiments", "exemplarily", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0211] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application. Therefore, any changes or modifications made in accordance with the claims and description of the present application should fall within the scope of the patent of this application.

Claims

1. A substrate processing device, characterized in that: The substrate processing device comprises: A holder, used for holding the substrate horizontally, wherein the holder can be detachably sealed and connected to a side surface of the substrate and / or an area of ​​a back surface of the substrate close to the side surface of the substrate; A processing container, comprising a first cavity for accommodating the substrate and a substrate processing liquid above the substrate, wherein the depth of the first cavity is greater than the thickness of the substrate; a first heater, configured to emit electromagnetic waves from the back side of the substrate to the substrate processing liquid, wherein the wavelength of the electromagnetic waves is configured to be able to pass through the substrate and heat the substrate processing liquid; The control unit is used to control the operation of the first heater.

2. The substrate processing device according to claim 1, characterized in that: The wavelength of the electromagnetic wave emitted by the first heater is 1 μm to 1000 μm.

3. The substrate processing device according to claim 1 or 2, characterized in that: The first heater is capable of pulse heating.

4. The substrate processing device according to claim 1, characterized in that: The substrate processing device further includes a liquid temperature control unit, which includes a second heater and a first temperature sensor, wherein the first temperature sensor is used to detect the temperature of the substrate processing liquid, and the second heater is used to heat the substrate processing liquid.

5. The substrate processing device according to claim 4, characterized in that: The liquid temperature control unit is configured as follows: When the temperature of the substrate processing liquid detected by the first temperature sensor is lower than a first preset value, the second heater heats the substrate processing liquid, and the first preset value is 1° C. to 10° C. lower than the boiling point of the substrate processing liquid; When the temperature of the substrate processing liquid detected by the first temperature sensor is equal to or higher than the first preset value, the second heater stops heating the substrate processing liquid.

6. The substrate processing device according to claim 4, characterized in that: The second heater and the first temperature sensor are both connected to the control unit, and the control unit is configured as follows: When the temperature of the substrate processing liquid detected by the first temperature sensor is lower than a first preset value, the control unit controls the second heater to heat the substrate processing liquid, and the first preset value is 1° C. to 10° C. lower than the boiling point of the substrate processing liquid; When the temperature of the substrate processing liquid detected by the first temperature sensor is equal to or higher than the first preset value, the control part controls the second heater to stop heating the substrate processing liquid.

7. The substrate processing device according to claim 6, characterized in that: The control unit is used to control the operation of the first heater, including: The control part confirms that the temperature of the substrate processing liquid detected by the first temperature sensor is equal to or higher than the first preset value, and the control part controls the first heater to heat the substrate processing liquid.

8. The substrate processing device according to claim 4, characterized in that: The substrate processing device further includes a liquid level sensor, the liquid level sensor is used to detect the liquid level position of the substrate processing liquid in the first chamber, the liquid level sensor, the second heater and the first temperature sensor are all connected to the control unit, and the control unit is configured to: confirm that the liquid level position of the substrate processing liquid detected by the liquid level sensor reaches a second preset value, and start to perform the heating step, the second preset value is equal to or higher than the front side of the substrate; The heating step comprises: When the temperature of the substrate processing liquid detected by the first temperature sensor is lower than a first preset value, controlling the second heater to heat the substrate processing liquid, the first preset value being 1° C. to 10° C. lower than the boiling point of the substrate processing liquid; When the temperature of the substrate processing liquid detected by the first temperature sensor is equal to or higher than the first preset value, the second heater is controlled to stop heating the substrate processing liquid, and the first heater is controlled to heat the substrate processing liquid.

9. The substrate processing device according to claim 8, characterized in that: The liquid level sensor detects that the liquid level of the substrate processing liquid reaches a second preset value, including: The liquid level sensor detects that the liquid level of the substrate processing liquid drops to the second preset value.

10. The substrate processing apparatus according to claim 1, wherein: The substrate processing device further includes a liquid input portion and a liquid discharge portion. The liquid input portion is used to introduce the substrate processing liquid into the first cavity, and the liquid discharge portion is used to discharge the substrate processing liquid in the first cavity.

11. The substrate processing apparatus according to claim 10, wherein: The substrate processing device further includes a liquid level sensor, and the liquid level sensor is used to detect the liquid level position of the substrate processing liquid in the first chamber.

12. The substrate processing apparatus according to claim 11, characterized in that: The liquid discharge portion is configured as follows: When the liquid level of the substrate processing liquid in the first chamber detected by the liquid level sensor is higher than a second preset value, the liquid discharge portion is opened to discharge the liquid, and the second preset value is equal to or higher than the front surface of the substrate; When the liquid level position of the substrate processing liquid in the first chamber detected by the liquid level sensor is equal to or lower than the second preset value, the liquid discharge portion is closed.

13. The substrate processing apparatus according to claim 11, wherein: The liquid level sensor and the liquid discharge unit are both connected to the control unit, and the control unit is configured as follows: When the liquid level of the substrate processing liquid in the first chamber detected by the liquid level sensor is higher than a second preset value, the control unit controls the liquid discharge unit to start discharging liquid, and the second preset value is equal to or higher than the front side of the substrate; When the liquid level position of the substrate processing liquid in the first chamber detected by the liquid level sensor is equal to or lower than the second preset value, the control part controls the liquid discharge part to stop discharging liquid.

14. The substrate processing apparatus according to claim 11, wherein: The liquid level sensor, the liquid input part and the liquid discharge part are all connected to the control part, and the control part is configured as follows: Controlling the liquid input portion to open so as to input the substrate processing liquid into the first chamber; After the liquid level sensor detects that the liquid level of the substrate processing liquid is higher than a second preset value, controlling the liquid input part to close and controlling the liquid discharge part to open to discharge the liquid, the second preset value being equal to or higher than the front side of the substrate; The liquid discharge portion is closed when the liquid level position of the substrate processing liquid in the first chamber detected by the liquid level sensor is equal to the second preset value, and the second preset value is equal to or higher than the front surface of the substrate.

15. The substrate processing apparatus according to claim 1, wherein: The substrate processing device further includes a gas supply part, and the gas supply part includes a gas input component and a gas output component. The gas input component is used to introduce gas into the first cavity, and the gas output component is used to exhaust the gas in the first cavity.

16. The substrate processing apparatus according to claim 15, wherein: The gas supply unit further includes a gas pressure sensor, which is used to detect the gas pressure in the first cavity. The gas supply unit is configured as follows: When the air pressure in the first cavity measured by the air pressure sensor is lower than a third preset value, the gas input component increases the intake flow rate and / or the gas output component reduces the exhaust flow rate; When the air pressure in the first cavity measured by the air pressure sensor is higher than the third preset value, the gas input component reduces the intake flow rate and / or the gas output component increases the exhaust flow rate.

17. The substrate processing apparatus according to claim 15, characterized in that: The gas supply unit further includes a pressure sensor, which is used to detect the pressure in the first cavity. The pressure sensor, the gas input assembly and the gas output assembly are all connected to the control unit. The gas supply unit is configured as follows: When the air pressure in the first cavity measured by the air pressure sensor is lower than a third preset value, the control unit controls the gas input component to increase the intake flow rate and / or the control unit controls the gas output component to reduce the exhaust flow rate; When the air pressure in the first cavity measured by the air pressure sensor is higher than the third preset value, the control unit controls the gas input component to reduce the intake flow rate and / or the control unit controls the gas output component to increase the exhaust flow rate.

18. The substrate processing apparatus according to claim 15, wherein: The gas supply unit includes a second temperature sensor and a third heater, wherein the second temperature sensor is used to detect the temperature of the gas in the first cavity, and the third heater is used to heat the gas introduced into the first cavity by the gas input assembly before the gas enters the first cavity.

19. The substrate processing apparatus according to claim 18, wherein: The gas supply unit is configured as follows: When the gas temperature in the first chamber measured by the second temperature sensor is lower than a fourth preset value, the third heater heats the gas introduced into the first chamber by the gas input assembly, the fourth preset value is lower than the first preset value, and the first preset value is 1° C. to 10° C. lower than the boiling point of the substrate processing liquid; When the gas temperature in the first cavity measured by the second temperature sensor is equal to or higher than the fourth preset value, the third heater stops heating or reduces heating power.

20. The substrate processing apparatus according to claim 18, wherein: The second temperature sensor and the third heater are both connected to the control unit, and the control unit is configured as follows: When the gas temperature in the first cavity measured by the second temperature sensor is lower than a fourth preset value, the control unit controls the third heater to heat the gas introduced into the first cavity by the gas input assembly, the fourth preset value being lower than the first preset value, and the first preset value being lower than the boiling point of the substrate processing liquid by 1° C. to 10° C.; When the gas temperature in the first cavity measured by the second temperature sensor is equal to or higher than the fourth preset value, the control unit controls the third heater to stop heating or reduce heating power.

21. The substrate processing apparatus according to claim 1, wherein: The substrate processing device further includes a vibrator, which can apply vibration to the substrate processing liquid, and the vibration frequency of the vibrator is 10 kHz to 3 MHz.

22. A substrate processing method, characterized in that: include: Keep the substrate horizontally; Providing a substrate processing liquid having a temperature equal to a first preset value to the front side of the substrate, wherein the liquid level of the substrate processing liquid is not lower than the front side of the substrate, and the first preset value is 1° C. to 10° C. lower than the boiling point of the substrate processing liquid; The substrate processing liquid is heated by electromagnetic waves passing through the substrate from the back side of the substrate until a portion of the substrate processing liquid close to the substrate is vaporized to generate bubbles.

23. The substrate processing method according to claim 22, characterized in that: The step of providing a substrate processing liquid having a temperature equal to a first preset value to the front surface of the substrate comprises: providing the substrate processing liquid having a temperature lower than the first preset value to the front surface of the substrate until the liquid level of the substrate processing liquid is no lower than the front surface of the substrate; The substrate processing liquid is heated until the temperature of the substrate processing liquid is equal to the first preset value.

24. The substrate processing method according to claim 22, characterized in that: The wavelength of the electromagnetic wave is 1 μm to 1000 μm.

25. The substrate processing method according to claim 24, characterized in that: The electromagnetic wave is a pulsed electromagnetic wave.

26. The substrate processing method according to claim 22, characterized in that: In the process of heating the substrate processing liquid from the back side of the substrate by electromagnetic waves, ultrasonic vibration is applied to the substrate processing liquid to make the bubbles rise.

27. The substrate processing method according to claim 22, characterized in that: In a process of heating the substrate processing liquid from the back side of the substrate by electromagnetic waves, a gas is supplied to a liquid surface of the substrate processing liquid.

28. The substrate processing method according to claim 27, characterized in that: The temperature of the gas provided to the liquid surface of the substrate processing liquid is equal to a fourth preset value, and the fourth preset value is less than or equal to the first preset value.

29. The substrate processing method according to claim 22, characterized in that: The substrate processing method further comprises: The gas pressure at the liquid surface of the substrate processing liquid is controlled so that the size and generation speed of the bubbles are within a preset parameter range.

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