Crystal pulling process control method, single crystal silicon rod process control device and crystal pulling system

Abstract

The present application provides a crystal pulling process control method, a single crystal silicon rod process control device and a crystal pulling system, the method comprising: constructing a multi-physical field coupling numerical model of silicon melt in a single crystal furnace, used to reflect the coupling relationship between the pulsating velocity field, temperature field and electromagnetic field inside the silicon melt; generating multiple characteristic parameters corresponding to the silicon melt under multiple process conditions and multiple magnetic field structure parameters according to a preset simulation method and the multi-physical field coupling numerical model, wherein the characteristic parameters are used to characterize the melt flow characteristics; determining target process conditions and target magnetic field structure parameters according to multiple characteristic parameters, multiple process conditions and multiple magnetic field structure parameters, and controlling the single crystal furnace to perform a crystal pulling process under the target process conditions and the target magnetic field structure parameters. The above method solves the problem in the prior art that the quality of the crystal cannot be guaranteed due to the Czochralski single crystal silicon rod growth process.

Description

Technical Field

[0001] The present application relates to the technical field of direct-pulling single-crystal silicon, and in particular to a control method, device and crystal pulling system for a crystal pulling process. Background Art

[0002] The Czochralski crystal growth process is an important technology and method for pulling semiconductor single crystal rods. It can produce high-purity, high-quality silicon single crystals and is an important foundation in the semiconductor materials industry.

[0003] As an important semiconductor material, the growth technology of single crystal silicon has a profound impact on the manufacture of high-purity silicon, solar cells, as well as aerospace, microelectronics and other fields. The Czochralski method is also the most important growth technology at present. The surface of N-type single crystal silicon rod has a good band structure and is often used to manufacture the N-type region of solar cells. N-type doping is a key factor in determining the quality of single crystal silicon rods. The distribution uniformity of dopants (P, As, B, Sb) directly affects the electrical properties of single crystal silicon.

[0004] However, there are many challenges in the growth of single crystal silicon rods. Among them, due to the excessively fast growth rate, broken edges will be formed, resulting in fluctuations in the crystal diameter; the coupling of multiple physical fields such as temperature field, pressure field, and rotation field during the growth process makes it difficult to accurately control the single crystal growth conditions; the high concentration of oxygen impurities on the crystal surface leads to poor surface energy band structure, affecting the electrical properties of the crystal; during the crystal growth process, the heat flux density at the edge of the crystal is high, resulting in depressions on the edge of the crystal; during the growth process, small cracks on the crystal surface are difficult to repair, resulting in interruption of crystal growth and affecting the crystal quality.

[0005] In summary, the traditional Czochralski method for growing single crystal silicon rods cannot precisely control the crystal growth conditions during the crystal growth process due to the growth environment coupled with multiple physical fields. This results in the inability to guarantee the crystal quality, and the diameter stability and uniformity of the crystal are difficult to achieve the desired effect. Summary of the invention

[0006] The main purpose of the present application is to provide a control method, device and crystal pulling system for a crystal pulling process, so as to at least solve the problem in the prior art that the crystal quality cannot be guaranteed due to the Czochralski single crystal silicon rod growth process.

[0007] In order to achieve the above-mentioned purpose, according to one aspect of the present application, a control method for a crystal pulling process is provided, comprising: constructing a multi-physical field coupling numerical model of a silicon melt in a single crystal furnace, wherein the multi-physical field coupling numerical model is used to reflect the coupling relationship between the pulsating velocity field, temperature field and electromagnetic field inside the silicon melt; according to a preset simulation method and the multi-physical field coupling numerical model, generating a plurality of characteristic parameters corresponding to the silicon melt under a plurality of process conditions and a plurality of magnetic field structure parameters, wherein the characteristic parameters are used to characterize the melt flow characteristics; according to a plurality of the characteristic parameters, a plurality of the process conditions and a plurality of the magnetic field structure parameters, determining the target process conditions and the target magnetic field structure parameters, and controlling the single crystal furnace to perform a crystal pulling process under the target process conditions and the target magnetic field structure parameters.

[0008] Optionally, according to the preset simulation method and the multi-physics field coupling numerical model, multiple characteristic parameters corresponding to the silicon melt under multiple process conditions and multiple magnetic field structure parameters are generated, including: performing large eddy simulation on the multi-physics field coupling numerical model to obtain simulation results corresponding to multiple melt systems, wherein the simulation results are used to reflect the dynamic characteristics of turbulent flow inside the silicon melt, and any two of the melt systems have different dynamic characteristics; according to the first target simulation results and multiple preset process conditions, determining the first characteristic parameters corresponding to multiple first melt systems among the multiple melt systems, wherein multiple first melt systems correspond to multiple preset process conditions; according to the second target simulation results and multiple preset magnetic field structure parameters, determining the second characteristic parameters corresponding to multiple second melt systems among the multiple melt systems, wherein multiple second melt systems respectively correspond to multiple preset magnetic field structure parameters.

[0009] Optionally, performing large eddy simulation on the multi-physics field coupling numerical model to obtain simulation results corresponding to multiple melt systems includes: using large eddy simulation, the multi-physics field coupling numerical model and the crystal growth kinetics model to establish a target coupling model, wherein the target coupling model is used to reflect the dynamic change relationship between the melt flow characteristics and the crystallization interface parameters corresponding to the multiple melt systems; according to the target coupling model, obtaining simulation results corresponding to the multiple melt systems.

[0010] Optionally, the first characteristic parameters corresponding to multiple first melt systems are determined based on the first target simulation results and multiple preset process conditions, including: based on the first target simulation results and multiple preset silicon melt temperatures, obtaining crystallization interface temperature pulsations corresponding to multiple first melt systems, wherein the first target simulation results are used to reflect the dynamic change relationship between the crystallization interface temperature pulsations of the silicon melt and multiple silicon melt temperatures.

[0011] Optionally, determining second characteristic parameters corresponding to multiple second melt systems based on the second target simulation results and multiple preset magnetic field structure parameters includes: obtaining convective heat transfer characteristics corresponding to multiple second melt systems based on the second target simulation results and multiple preset hook-shaped magnetic field structure parameters, wherein the second target simulation results are used to reflect the changing relationship of the convective heat transfer characteristics of the silicon melt with multiple hook-shaped magnetic field structure parameters, and the hook-shaped magnetic field structure parameters include the position and strength of the hook-shaped magnetic field.

[0012] Optionally, determining the target process conditions and target magnetic field structure parameters based on the multiple characteristic parameters, the multiple process conditions and the multiple magnetic field structure parameters includes: judging whether the multiple characteristic parameters meet corresponding preset conditions; and when a first target characteristic parameter among the multiple characteristic parameters meets the target preset conditions, determining the process conditions and the magnetic field structure parameters corresponding to the first target characteristic parameter as the target process conditions and target magnetic field structure parameters.

[0013] Optionally, the control method also includes: an adjustment step: when the first target characteristic parameter does not meet the target preset condition, outputting an adjustment signal to the single crystal furnace to adjust the process conditions and the magnetic field structure parameters corresponding to the first target characteristic parameter; a determination step: re-determining the updated first target characteristic parameter corresponding to the silicon melt under the adjusted process conditions and / or magnetic field structure parameters according to the preset simulation method and the multi-physical field coupling numerical model; a judgment step: judging whether the first target characteristic parameter meets the target preset condition; when the first target characteristic parameter does not meet the target preset condition, repeating the adjustment step, the determination step and the judgment step until the first target characteristic parameter meets the target preset condition and stops.

[0014] Optionally, when the single crystal furnace receives the adjustment signal, it grows single crystal silicon according to the adjusted process conditions and / or magnetic field structure parameters, and the determination step includes: generating a second target characteristic parameter corresponding to the silicon melt under the adjusted process conditions and / or magnetic field structure parameters according to a preset simulation method and the multi-physical field coupling numerical model, the second target characteristic parameter being a characteristic parameter different from the first target characteristic parameter among the multiple characteristic parameters; obtaining target experimental data for the growth of the single crystal silicon, wherein the target experimental data and the second target characteristic parameter have the same characteristic type; judging whether the difference between the second target characteristic parameter and the experimental data satisfies a preset difference; and if the preset difference is satisfied, determining that the second target characteristic parameter is the updated first target characteristic parameter.

[0015] According to another aspect of the present application, a process control device for a single crystal silicon rod is provided, comprising: a construction module for constructing a multi-physical field coupling numerical model of a silicon melt in a single crystal furnace, wherein the multi-physical field coupling numerical model is used to reflect the coupling relationship between the pulsating velocity field, temperature field and electromagnetic field inside the silicon melt; a generation module for generating, according to a preset simulation method and the multi-physical field coupling numerical model, a plurality of characteristic parameters corresponding to the silicon melt under a plurality of process conditions and a plurality of magnetic field structure parameters, wherein the characteristic parameters are used to characterize the melt flow characteristics; a control module for determining a target process condition and a target magnetic field structure parameter according to a plurality of the characteristic parameters, a plurality of the process conditions and a plurality of the magnetic field structure parameters, and controlling the single crystal furnace to pull an N-type single crystal silicon rod under the target process condition and the target magnetic field structure parameter.

[0016] According to another aspect of the present application, a crystal pulling system is provided, comprising: a single crystal furnace, one or more processors, a memory, and one or more programs, wherein the one or more processors are electrically connected to the single crystal furnace, the one or more programs are stored in the memory and are configured to be executed by the one or more processors, and the one or more programs include a control method for executing the crystal pulling process.

[0017] By applying the technical solution of the present application, a numerical model for coupling multiple physical fields such as pulsating velocity field, temperature field, and electromagnetic field inside the melt is established. The multi-physical field coupling numerical model can be used to analyze the complex coupling relationship between multiple physical fields inside the silicon melt, thereby accurately controlling the melt flow characteristics, and then determining the target process conditions and target magnetic field structure parameters by characterizing the characteristic parameters of the melt flow characteristics, and controlling the single crystal furnace to perform the crystal pulling process under the target process conditions and target magnetic field structure parameters, which can significantly improve the growth quality of single crystal silicon rods produced by the Czochralski method, effectively suppress the instability and drastic fluctuations of the melt flow, greatly reduce the wire breakage rate during the growth process, and improve the crystallization rate and yield of single crystal silicon rods, thereby solving the problem in the prior art that the crystal quality cannot be guaranteed due to the Czochralski method single crystal silicon rod growth process. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The drawings constituting part of the present application are used to provide a further understanding of the present application. The exemplary embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0019] Figure 1 A hardware structure block diagram of a mobile terminal for executing a control method for a crystal pulling process provided in an embodiment of the present application is shown;

[0020] Figure 2A schematic flow chart of a control method for a crystal pulling process provided in accordance with an embodiment of the present application is shown;

[0021] Figure 3 A structural block diagram of a control device for a crystal pulling process provided according to an embodiment of the present application is shown; DETAILED DESCRIPTION

[0022] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0023] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0024] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0025] As introduced in the background technology, in the conventional Czochralski method of single crystal silicon rod growth process in the prior art, due to the multi-physical field coupled growth environment, it is impossible to accurately control the crystal growth conditions during the crystal growth process, resulting in the inability to ensure the crystal quality, and the diameter stability and uniformity of the crystal are difficult to achieve the expected effect. To solve the above problems, the embodiments of the present application provide a control method, device, storage medium and crystal pulling system for a crystal pulling process.

[0026] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention.

[0027] The method embodiments provided in the embodiments of the present application can be executed in a mobile terminal, a computer terminal or a similar computing device. Taking running on a mobile terminal as an example, Figure 1FIG. 1 is a hardware structure block diagram of a mobile terminal of a method for controlling a crystal pulling process according to an embodiment of the present invention. Figure 1 As shown, the mobile terminal may include one or more ( Figure 1 Only one is shown in the figure) a processor 102 (the processor 102 may include but is not limited to a processing device such as a microprocessor MCU or a programmable logic device FPGA) and a memory 104 for storing data, wherein the mobile terminal may also include a transmission device 106 and an input / output device 108 for communication functions. It can be understood by those skilled in the art that Figure 1 The structure shown is for illustration only and does not limit the structure of the mobile terminal. Figure 1 More or fewer components as shown, or with Figure 1 Different configurations shown.

[0028] The memory 104 can be used to store computer programs, for example, software programs and modules of application software, such as the computer program corresponding to the control method of the crystal pulling process in the embodiment of the present invention. The processor 102 executes various functional applications and data processing by running the computer program stored in the memory 104, that is, the above method is implemented. The memory 104 may include a high-speed random access memory, and may also include a non-volatile memory, such as one or more magnetic storage devices, flash memory, or other non-volatile solid-state memory. In some examples, the memory 104 may further include a memory remotely arranged relative to the processor 102, and these remote memories can be connected to the mobile terminal via a network. Examples of the above-mentioned network include but are not limited to the Internet, an intranet, a local area network, a mobile communication network, and a combination thereof. The transmission device 106 is used to receive or send data via a network. The above-mentioned specific examples of the network may include a wireless network provided by a communication provider of the mobile terminal. In one example, the transmission device 106 includes a network adapter (Network Interface Controller, referred to as NIC), which can be connected to other network devices through a base station so as to communicate with the Internet. In one example, the transmission device 106 may be a radio frequency (RF) module, which is used to communicate with the Internet wirelessly.

[0029] In this embodiment, a method for controlling a crystal pulling process running on a mobile terminal, a computer terminal or a similar computing device is provided. It should be noted that the steps shown in the flowchart of the accompanying drawings can be executed in a computer system such as a set of computer executable instructions, and although a logical order is shown in the flowchart, in some cases, the steps shown or described can be executed in an order different from that shown here.

[0030] Figure 2 1 is a flow chart of a method for controlling a crystal pulling process according to an embodiment of the present application. Figure 2 As shown, the method comprises the following steps:

[0031] Step S201, constructing a multi-physics field coupling numerical model of silicon melt in a single crystal furnace, wherein the multi-physics field coupling numerical model is used to reflect the coupling relationship between the pulsating velocity field, temperature field and electromagnetic field inside the silicon melt;

[0032] Specifically, based on the established multi-physical field coupling numerical model, the unstable flow characteristics of silicon melt under different process conditions and magnetic field structures are studied, and then the technology of suppressing the unstable flow of silicon melt during the pulling growth of N-type single crystal silicon using the hook-shaped magnetic field method is developed to solve the problem of single crystal silicon growth breakage and improve its survival rate.

[0033] Step S202, generating a plurality of characteristic parameters corresponding to the silicon melt under a plurality of process conditions and a plurality of magnetic field structure parameters according to a preset simulation method and a multi-physical field coupling numerical model, wherein the characteristic parameters are used to characterize melt flow characteristics;

[0034] Specifically, through a preset simulation method (such as large eddy simulation), according to the constructed multi-physics field coupling numerical model, the characteristic parameters of silicon melt under different process conditions and magnetic field structure parameters can be generated. These parameters can characterize the stability of melt flow, including but not limited to the frequency and amplitude of melt turbulence, and the influence on the crystallization interface shape and crystal growth rate. By comparing and analyzing these parameters, it is possible to identify which process conditions and magnetic field structure parameters will lead to unstable melt flow, thereby affecting the crystal quality.

[0035] Step S203, determining target process conditions and target magnetic field structure parameters according to multiple characteristic parameters, multiple process conditions and multiple magnetic field structure parameters, and controlling the single crystal furnace to perform a crystal pulling process under the target process conditions and target magnetic field structure parameters.

[0036] Specifically, based on the generated characteristic parameters, a set of optimal target process conditions and target magnetic field structure parameters can be determined in combination with historical experimental data. The selection of these parameters is intended to suppress unstable flow inside the melt, reduce the risk of wire breakage during crystal growth, and improve the survival rate. Then, the determined target process conditions and magnetic field structure parameters are applied to the actual single crystal furnace control, and the single crystal furnace is ensured to operate under optimal conditions by adjusting parameters such as the crucible speed, crystal speed, hook-shaped magnetic field position and intensity. This control method can specifically solve problems such as unstable melt flow in the existing process, thereby significantly improving the quality of Czochralski single crystal silicon rods.

[0037] Through this embodiment, a multi-physical field coupling numerical model is used to analyze the complex coupling relationship between multiple physical fields inside the silicon melt, so as to accurately control the melt flow characteristics, and then determine the target process conditions and target magnetic field structure parameters by characterizing the characteristic parameters of the above-mentioned melt flow characteristics, and control the single crystal furnace to perform the crystal pulling process under the target process conditions and target magnetic field structure parameters, which can significantly improve the growth quality of the Czochralski single crystal silicon rod, effectively suppress the instability and drastic fluctuation of the melt flow, greatly reduce the wire breakage rate during the growth process, and improve the crystallization rate and yield of the single crystal silicon rod, thereby solving the problem in the prior art that the crystal quality cannot be guaranteed due to the Czochralski single crystal silicon rod growth process.

[0038] In the Czochralski method of single-crystal silicon rod growth, the construction of a multi-physical field coupling numerical model requires comprehensive consideration of the coupling relationship between the pulsating velocity field, temperature field and electromagnetic field inside the melt. Specifically, the above step S201 can be implemented by the following steps: First, determine the physical fields that need to be considered, including fluid dynamics (velocity field), thermodynamics (temperature field) and electromagnetism (electromagnetic field). In the Czochralski method of single-crystal silicon growth, these physical fields affect each other. For example, the electromagnetic field acts on the melt through the Lorentz force, changing its flow rate and temperature distribution, thereby affecting the crystal growth rate and the shape of the crystal interface; then establish a mathematical model, which may include a fluid dynamics model, a thermodynamic model, and an electromagnetic model; and couple the above-mentioned separate physical field equations to form a set of coupled equations to ensure that the influence between the temperature field, velocity field and electromagnetic field can be correctly reflected. For example, the speed of melt flow will affect the heat transport, thereby changing the temperature field distribution; and the temperature field change will in turn affect the density and viscosity of the melt, thereby affecting the fluid dynamics.

[0039] Exemplarily, establishing a mathematical model includes: establishing a flow equation based on the Navier-Stokes equation and taking into account the viscosity, inertia, gravity and Lorentz force of the melt; and establishing a temperature distribution equation in combination with the law of conservation of energy and Fourier's law of heat conduction and taking into account the thermal diffusion of the melt.

[0040] In order to generate characteristic parameters for characterizing the flow characteristics of the melt, the above-mentioned step S202 of the present application can be implemented through the following steps: performing large eddy simulation on the multi-physical field coupling numerical model to obtain simulation results corresponding to multiple melt systems, wherein the simulation results are used to reflect the dynamic characteristics of turbulent flow inside the silicon melt, and any two melt systems have different dynamic characteristics; according to the first target simulation results and multiple preset process conditions, obtaining first characteristic parameters corresponding to multiple first melt systems, wherein the multiple first melt systems correspond to multiple preset process conditions; according to the second target simulation results and multiple preset magnetic field structure parameters, obtaining second characteristic parameters corresponding to multiple second melt systems, wherein the multiple second melt systems respectively correspond to multiple preset magnetic field structure parameters.

[0041] Specifically, LES (Large Eddy Simulation) is an advanced fluid dynamics numerical simulation method, which is mainly used to study and predict turbulent flows under high Reynolds numbers. Compared with direct numerical simulation (DNS), LES has higher computational efficiency in high Reynolds number flows. Through fine modeling, LES can maintain high prediction accuracy. Through LES, the influence of different process conditions (such as crucible speed, crystal speed, hook-shaped magnetic field position and strength, etc.) on melt flow characteristics can be studied, which helps to optimize process parameters to achieve the purpose of controlling melt flow and improving crystal growth stability.

[0042] In some optional embodiments, a large eddy simulation is performed on a multi-physics field coupling numerical model to obtain simulation results corresponding to multiple melt systems, including: using a large eddy simulation method, a multi-physics field coupling numerical model and a crystal growth kinetics model to establish a target coupling model, wherein the target coupling model is used to reflect the dynamic change relationship between the melt flow characteristics and crystallization interface parameters corresponding to the multiple melt systems; according to the target coupling model, simulation results corresponding to the multiple melt systems are obtained.

[0043] Specifically, in the above-mentioned embodiment, based on the crystal growth kinetics theory, a more accurate coupling relationship between melt flow and crystallization interface morphology is established, which can more accurately capture the unstable turbulent flow in the high-temperature silicon melt, thereby being able to more accurately predict and control the influence of melt flow on the crystallization interface morphology, solving the problem in the prior art that the crystal quality cannot be guaranteed due to the CZO single crystal silicon rod growth process, and improving the crystal quality of the crystal pulling process.

[0044] In some optional embodiments, based on the first target simulation result and multiple preset process conditions, first characteristic parameters corresponding to multiple first melt systems are obtained, including: based on the first target simulation result and multiple preset silicon melt temperatures, crystallization interface temperature pulsations corresponding to multiple first melt systems are obtained, wherein the first target simulation result is used to reflect the dynamic change relationship between the crystallization interface temperature pulsations of the silicon melt and the multiple silicon melt temperatures.

[0045] Specifically, by using large eddy simulation, multi-physics field coupling numerical model and crystal growth kinetics model, the target coupling model established can be a three-dimensional non-steady-state numerical model that associates the pulsating physical field inside the melt, the crystallization interface and the temperature distribution inside the crystal during the growth of single crystal silicon. Through this model, the relationship between the temperature pulsation caused by unstable flow of the melt and the temperature pulsation of the crystallization interface can be analyzed, so that the crystallization interface temperature pulsation in different melt systems can be obtained based on the silicon melt temperature in multiple historical experimental data.

[0046] In some optional embodiments, second characteristic parameters corresponding to multiple second melt systems are obtained based on the second target simulation results and multiple preset magnetic field structure parameters, including: based on the second target simulation results and multiple preset hook-shaped magnetic field structure parameters, convective heat transfer characteristics corresponding to multiple second melt systems are obtained, wherein the second target simulation results are used to reflect the changing relationship of the convective heat transfer characteristics of the silicon melt with multiple hook-shaped magnetic field structure parameters, and the hook-shaped magnetic field structure parameters include the position and strength of the hook-shaped magnetic field.

[0047] Specifically, the large eddy simulation method and the multi-physics field coupling numerical model can be used to study the influence of the yoke-shaped magnetic field on the melt flow instability during the single crystal silicon pulling growth process, revealing the regulation mechanism of the yoke-shaped magnetic field on the unstable melt flow. Therefore, the convective heat transfer characteristics in different melt systems can be obtained based on the position and intensity of the yoke-shaped magnetic field in multiple historical experimental data.

[0048] In some embodiments, the above-mentioned step S203 can be specifically implemented through the following steps: determining whether multiple characteristic parameters meet corresponding preset conditions; when the first target characteristic parameter among the multiple characteristic parameters meets the target preset conditions, determining the process conditions and magnetic field structure parameters corresponding to the first target characteristic parameter as the target process conditions and target magnetic field structure parameters.

[0049] Specifically, numerical simulation is performed using the established model to analyze the characteristics of unstable flow inside the melt under different process conditions and magnetic field structures, how the melt flow affects key parameters such as the shape of the crystallization interface and the crystal growth rate, and how these changes further lead to the problem of crystal breakage. Then, preset conditions are set according to the characteristic parameters of the historical melt system with stable melt flow, and by judging whether the characteristic parameters obtained in step S202 meet the preset conditions, the optimal combination of magnetic field parameters is found from the historical experimental data, which can effectively suppress the unstable flow in the melt and thus reduce the risk of crystal breakage. In addition to the magnetic field parameters, process conditions such as crucible rotation speed, crystal rotation speed, etc. need to be determined to cooperate with the effect of the magnetic field.

[0050] In some optional embodiments, the control method in the embodiment of the present application also includes: an adjustment step: when the target characteristic parameters do not meet the target preset conditions, an adjustment signal is output to the single crystal furnace to adjust the process conditions and magnetic field structure parameters corresponding to the first target characteristic parameters; a determination step: re-determining the updated target characteristic parameters corresponding to the silicon melt under the adjusted process conditions and / or magnetic field structure parameters according to the preset simulation method and the multi-physical field coupling numerical model; a judgment step: judging whether the target characteristic parameters meet the target preset conditions; when the target characteristic parameters do not meet the target preset conditions, the adjustment step, the determination step and the judgment step are repeated until the target characteristic parameters meet the target preset conditions and stop.

[0051] Furthermore, when the single crystal furnace receives the adjustment signal, it grows single crystal silicon according to the adjusted process conditions and / or magnetic field structure parameters, and then generates a second target characteristic parameter corresponding to the silicon melt under the adjusted process conditions and / or magnetic field structure parameters according to the preset simulation method and the multi-physical field coupling numerical model; and obtains target experimental data for single crystal silicon growth, wherein the target experimental data and the second target characteristic parameter have the same characteristic type; then, it is determined whether the difference between the second target characteristic parameter and the experimental data satisfies the preset difference, and if the preset difference is satisfied, the second target characteristic parameter is determined to be the updated first target characteristic parameter.

[0052] Specifically, the position and intensity of the hook-shaped magnetic field can be adjusted to study its effect on melt flow, and the model prediction can be verified through experiments. The magnetic field configuration can be gradually optimized to find an optimal magnetic field structure parameter that can effectively suppress unstable flow in the melt, thereby reducing the risk of crystal breakage. In addition to the magnetic field structure parameters, process conditions such as crucible speed and crystal speed can also be adjusted to cooperate with the effect of the magnetic field. The adjustment of these parameters can also be based on model predictions and experimental verification to ensure that the melt flow during the entire growth process can be effectively controlled. Finally, through continuous production data collection and analysis, it is verified whether the adjusted magnetic field structure parameters and process conditions can indeed improve the survival rate of crystals and reduce the occurrence of breakage.

[0053] Through this series of steps in the embodiment of the present application, the hook-shaped magnetic field can be effectively utilized to suppress the unstable flow of the melt, solve the problem of wire breaking in the growth of large-size single crystal silicon, and improve the survival rate of the crystal.

[0054] The embodiment of the present application also provides a process control device for a single crystal silicon rod. It should be noted that the process control device for a single crystal silicon rod in the embodiment of the present application can be used to execute the process control method for a single crystal silicon rod provided in the embodiment of the present application. The device is used to implement the above-mentioned embodiments and preferred implementation modes, and those that have been described will not be repeated. As used below, the term "module" can implement a combination of software and / or hardware for a predetermined function. Although the devices described in the following embodiments are preferably implemented in software, the implementation of hardware, or a combination of software and hardware, is also possible and conceived.

[0055] The process control device for a single crystal silicon rod provided in an embodiment of the present application is introduced below.

[0056] Figure 3 Schematic diagram of a process control device for a single crystal silicon rod according to an embodiment of the present application. Figure 3 As shown, the device comprises:

[0057] A construction module 10 is used to construct a multi-physics field coupling numerical model of silicon melt in a single crystal furnace, wherein the multi-physics field coupling numerical model is used to reflect the coupling relationship between the pulsating velocity field, temperature field and electromagnetic field inside the silicon melt;

[0058] A generating module 20, for generating a plurality of characteristic parameters corresponding to the silicon melt under a plurality of process conditions and a plurality of magnetic field structure parameters according to a preset simulation method and a multi-physical field coupling numerical model, wherein the characteristic parameters are used to characterize melt flow characteristics;

[0059] The control module 30 is used to determine the target process conditions and target magnetic field structure parameters according to multiple characteristic parameters, multiple process conditions and multiple magnetic field structure parameters, and control the single crystal furnace to pull N-type single crystal silicon rods under the target process conditions and target magnetic field structure parameters.

[0060] As an optional scheme, the above-mentioned generation module includes: a simulation module, which is used to perform large eddy simulation on a multi-physical field coupling numerical model to obtain simulation results corresponding to multiple melt systems, wherein the simulation results are used to reflect the dynamic characteristics of turbulent flow inside the silicon melt, and any two melt systems have different dynamic characteristics; a first determination submodule, which is used to determine the first characteristic parameters corresponding to the multiple first melt systems according to the first target simulation results and multiple preset process conditions, wherein the multiple first melt systems correspond to multiple preset process conditions; a second determination submodule, which is used to obtain the second characteristic parameters corresponding to the multiple second melt systems according to the second target simulation results and multiple preset magnetic field structure parameters, wherein the multiple second melt systems respectively correspond to multiple preset magnetic field structure parameters.

[0061] In an optional scheme, the first determination submodule includes: using large eddy simulation, multi-physics field coupling numerical model and crystal growth dynamics model to establish a target coupling model, wherein the target coupling model is used to reflect the dynamic change relationship between multiple melt flow characteristics and crystallization interface parameters corresponding to the melt system; according to the target coupling model, simulation results corresponding to multiple melt systems are obtained.

[0062] In an optional scheme, the second determination submodule includes: obtaining convective heat transfer characteristics corresponding to multiple second melt systems based on the second target simulation results and multiple preset hook-shaped magnetic field structure parameters, wherein the second target simulation results are used to reflect the changing relationship of the convective heat transfer characteristics of the silicon melt with the multiple hook-shaped magnetic field structure parameters, and the hook-shaped magnetic field structure parameters include the position and strength of the hook-shaped magnetic field.

[0063] In an optional scheme, the control module includes: a first judgment submodule, used to judge whether multiple characteristic parameters meet corresponding preset conditions; a third determination submodule, used to determine the process conditions and magnetic field structure parameters corresponding to the first target characteristic parameters as target process conditions and target magnetic field structure parameters when the first target characteristic parameters meet the target preset conditions.

[0064] In an optional scheme, the process control device of the embodiment of the present application also includes: an adjustment module, which is used to execute the adjustment step: when the first target characteristic parameter does not meet the target preset condition, output an adjustment signal to the single crystal furnace to adjust the process conditions and magnetic field structure parameters corresponding to the first target characteristic parameter; a fourth determination submodule, which is used to execute the determination step: re-determine the updated first target characteristic parameter corresponding to the silicon melt under the adjusted process conditions and / or magnetic field structure parameters according to the preset simulation method and the multi-physical field coupling numerical model; a second judgment submodule, which is used to execute the judgment step: judge whether the first target characteristic parameter meets the target preset condition; a loop submodule, which is used to repeat the adjustment step, the determination step and the judgment step when the first target characteristic parameter does not meet the target preset condition, and stop when the first target characteristic parameter meets the target preset condition.

[0065] In an optional scheme, when the single crystal furnace receives an adjustment signal, it grows single crystal silicon according to the adjusted process conditions and / or magnetic field structure parameters, and the fourth determination submodule includes: a generation submodule, which is used to generate a second target characteristic parameter corresponding to the silicon melt under the adjusted process conditions and / or magnetic field structure parameters according to a preset simulation method and a multi-physical field coupling numerical model, and the second target characteristic parameter is a characteristic parameter different from the first target characteristic parameter among multiple characteristic parameters; an acquisition submodule, which is used to acquire target experimental data for single crystal silicon growth, wherein the target experimental data and the second target characteristic parameter have the same characteristic type; a third judgment submodule, which is used to judge whether the difference between the second target characteristic parameter and the experimental data meets the preset difference; if the preset difference is met, the second target characteristic parameter is determined to be the updated first target characteristic parameter.

[0066] In this embodiment, the construction module constructs a multi-physical field coupling numerical model of the silicon melt in the single crystal furnace, and uses the multi-physical field coupling numerical model to analyze the complex coupling relationship between the multiple physical fields inside the silicon melt, so as to accurately control the melt flow characteristics, the generation module generates multiple characteristic parameters corresponding to the silicon melt under multiple process conditions and multiple magnetic field structure parameters, the control module determines the target process conditions and target magnetic field structure parameters, and then determines the target process conditions and target magnetic field structure parameters by characterizing the characteristic parameters of the above-mentioned melt flow characteristics, and controls the single crystal furnace to perform a crystal pulling process under the target process conditions and target magnetic field structure parameters, which can significantly improve the growth quality of the CZ-pulled single crystal silicon rod, effectively suppress the instability and violent fluctuation of the melt flow, greatly reduce the wire breakage rate during the growth process, and improve the crystallization rate and yield of the single crystal silicon rod, thereby solving the problem that the crystal quality cannot be guaranteed due to the CZ-pulled single crystal silicon rod growth process in the prior art.

[0067] The process control device for the monocrystalline silicon rod comprises a processor and a memory, wherein the construction module, the generation module and the control module are stored in the memory as program units, and the processor executes the program units stored in the memory to realize the corresponding functions. The modules are all located in the same processor; or, the modules are located in different processors in any combination.

[0068] The processor includes a kernel, which retrieves the corresponding program unit from the memory. One or more kernels can be set, and the disconnection rate during the growth process can be reduced by adjusting the kernel parameters, thereby improving the crystallization rate and yield of the single crystal silicon rod, thereby solving the problem that the crystal quality cannot be guaranteed in the Czochralski single crystal silicon rod growth process in the prior art.

[0069] The memory may include non-permanent memory in a computer-readable medium, random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM, and the memory includes at least one memory chip.

[0070] An embodiment of the present invention provides a computer-readable storage medium, the computer-readable storage medium including a stored program, wherein when the program is run, a control method for controlling a device where the computer-readable storage medium is located to execute a crystal pulling process.

[0071] Specifically, the control method of the above-mentioned crystal pulling process includes:

[0072] Step S201, constructing a multi-physics field coupling numerical model of silicon melt in a single crystal furnace, wherein the multi-physics field coupling numerical model is used to reflect the coupling relationship between the pulsating velocity field, temperature field and electromagnetic field inside the silicon melt;

[0073] Specifically, based on the established multi-physical field coupling numerical model, the unstable flow characteristics of silicon melt under different process conditions and magnetic field structures are studied, and then the technology of suppressing the unstable flow of silicon melt during the pulling growth of N-type single crystal silicon using the hook-shaped magnetic field method is developed to solve the problem of single crystal silicon growth breakage and improve its survival rate.

[0074] Step S202, generating a plurality of characteristic parameters corresponding to the silicon melt under a plurality of process conditions and a plurality of magnetic field structure parameters according to a preset simulation method and a multi-physical field coupling numerical model, wherein the characteristic parameters are used to characterize melt flow characteristics;

[0075] Specifically, through a preset simulation method (such as large eddy simulation), according to the constructed multi-physics field coupling numerical model, the characteristic parameters of silicon melt under different process conditions and magnetic field structure parameters can be generated. These parameters can characterize the stability of melt flow, including but not limited to the frequency and amplitude of melt turbulence, and the influence on the crystallization interface shape and crystal growth rate. By comparing and analyzing these parameters, it is possible to identify which process conditions and magnetic field structure parameters will lead to unstable melt flow, thereby affecting the crystal quality.

[0076] Step S203, determining target process conditions and target magnetic field structure parameters according to multiple characteristic parameters, multiple process conditions and multiple magnetic field structure parameters, and controlling the single crystal furnace to perform a crystal pulling process under the target process conditions and target magnetic field structure parameters.

[0077] Specifically, based on the generated characteristic parameters, a set of optimal target process conditions and target magnetic field structure parameters can be determined in combination with historical experimental data. The selection of these parameters is intended to suppress unstable flow inside the melt, reduce the risk of wire breakage during crystal growth, and improve the survival rate. Then, the determined target process conditions and magnetic field structure parameters are applied to the actual single crystal furnace control, and the single crystal furnace is ensured to operate under optimal conditions by adjusting parameters such as the crucible speed, crystal speed, hook-shaped magnetic field position and intensity. This control method can specifically solve the problems of unstable melt flow, uneven distribution of oxygen impurities, and difficult control of phosphorus dopant transport in the existing process, thereby significantly improving the quality of CZ-pulled single crystal silicon rods.

[0078] An embodiment of the present invention provides a crystal pulling system, which includes a single crystal furnace, a processor, a memory, and a program stored in the memory and executable on the processor. When the processor executes the program, at least the following steps are implemented: constructing a multi-physical field coupling numerical model of silicon melt in the single crystal furnace, wherein the multi-physical field coupling numerical model is used to reflect the coupling relationship between the pulsating velocity field, temperature field, and electromagnetic field inside the silicon melt; generating multiple characteristic parameters corresponding to the silicon melt under multiple process conditions and multiple magnetic field structure parameters according to a preset simulation method and the multi-physical field coupling numerical model, wherein the characteristic parameters are used to characterize the flow characteristics of the melt; determining target process conditions and target magnetic field structure parameters according to multiple characteristic parameters, multiple process conditions, and multiple magnetic field structure parameters, and controlling the single crystal furnace to perform a crystal pulling process under the target process conditions and target magnetic field structure parameters.

[0079] The present application also provides a computer program product, which, when executed on a data processing device, is suitable for executing a program that initializes at least the following method steps: constructing a multi-physical field coupling numerical model of a silicon melt in a single crystal furnace, wherein the multi-physical field coupling numerical model is used to reflect the coupling relationship between the pulsating velocity field, temperature field and electromagnetic field inside the silicon melt; generating multiple characteristic parameters corresponding to the silicon melt under multiple process conditions and multiple magnetic field structure parameters according to a preset simulation method and the multi-physical field coupling numerical model, wherein the characteristic parameters are used to characterize the melt flow characteristics; determining the target process conditions and target magnetic field structure parameters according to the multiple characteristic parameters, the multiple process conditions and the multiple magnetic field structure parameters, and controlling the single crystal furnace to perform a crystal pulling process under the target process conditions and the target magnetic field structure parameters.

[0080] Obviously, those skilled in the art should understand that the above modules or steps of the present invention can be implemented by a general computing device, they can be concentrated on a single computing device, or distributed on a network composed of multiple computing devices, they can be implemented by a program code executable by a computing device, so that they can be stored in a storage device and executed by the computing device, and in some cases, the steps shown or described can be executed in a different order than here, or they can be made into individual integrated circuit modules, or multiple modules or steps therein can be made into a single integrated circuit module for implementation. Thus, the present invention is not limited to any specific combination of hardware and software.

[0081] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present application may adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0082] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0083] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0084] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0085] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0086] The memory may include non-permanent memory in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. The memory is an example of a computer-readable medium.

[0087] Computer readable media include permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined herein, computer readable media does not include temporary computer readable media (transitory media), such as modulated data signals and carrier waves.

[0088] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0089] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0090] 1) In the control method of the crystal pulling process of the embodiment of the present application, a multi-physical field coupling numerical model is used to analyze the complex coupling relationship between the multi-physical fields inside the silicon melt, so as to accurately control the melt flow characteristics, and then determine the target process conditions and target magnetic field structure parameters by characterizing the characteristic parameters of the above-mentioned melt flow characteristics, and control the single crystal furnace to perform the crystal pulling process under the target process conditions and target magnetic field structure parameters, which can significantly improve the growth quality of the CZ-pulled single crystal silicon rod, effectively suppress the instability and drastic fluctuation of the melt flow, greatly reduce the wire breakage rate during the growth process, and improve the crystallization rate and yield of the single crystal silicon rod, thereby solving the problem that the crystal quality cannot be guaranteed due to the CZ-pulled single crystal silicon rod growth process in the prior art.

[0091] 2) The embodiment of the present application can verify whether the adjusted magnetic field structure parameters and process conditions can indeed improve the survival rate of the crystal and reduce the occurrence of wire breaks through continuous production data collection and analysis.

[0092] 3) The embodiments of the present application can effectively utilize the hook-shaped magnetic field to suppress the unstable flow of the melt, solve the problem of wire breaking in the growth of large-size single crystal silicon, and improve the survival rate of the crystal.

[0093] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A control method for a crystal pulling process, characterized in that: include: Constructing a multi-physics field coupling numerical model of silicon melt in a single crystal furnace, wherein the multi-physics field coupling numerical model is used to reflect the coupling relationship between the pulsating velocity field, temperature field and electromagnetic field inside the silicon melt; A target coupling model is established by adopting a large eddy simulation method, the multi-physics field coupling numerical model and the crystal growth kinetics model, and simulation results corresponding to a plurality of melt systems are obtained according to the target coupling model, and a plurality of characteristic parameters corresponding to the silicon melt under a plurality of process conditions and a plurality of magnetic field structure parameters are generated according to the simulation results and a plurality of preset process conditions, wherein the target coupling model is used to reflect the dynamic change relationship between the melt flow characteristics and the crystallization interface parameters corresponding to the plurality of the melt systems, the simulation results are used to reflect the dynamic characteristics of the turbulent flow inside the silicon melt, any two of the melt systems have different dynamic characteristics, and the characteristic parameters are used to characterize the melt flow characteristics; According to the plurality of characteristic parameters, the plurality of process conditions and the plurality of magnetic field structure parameters, target process conditions and target magnetic field structure parameters are determined, and the single crystal furnace is controlled to perform a crystal pulling process under the target process conditions and the target magnetic field structure parameters.

2. The control method according to claim 1, characterized in that: The step of generating, according to the simulation result and the plurality of preset process conditions, a plurality of characteristic parameters corresponding to the silicon melt under the plurality of process conditions and the plurality of magnetic field structure parameters comprises: Determining first characteristic parameters corresponding to a plurality of first melt systems among the plurality of melt systems according to the first target simulation result and a plurality of preset process conditions, wherein the plurality of first melt systems correspond to a plurality of the preset process conditions; According to the second target simulation result and a plurality of preset magnetic field structure parameters, second characteristic parameters corresponding to a plurality of second melt systems among the plurality of melt systems are determined, wherein the plurality of second melt systems respectively correspond to a plurality of the preset magnetic field structure parameters.

3. The control method according to claim 2, characterized in that: The step of determining first characteristic parameters corresponding to a plurality of first melt systems according to the first target simulation result and a plurality of preset process conditions includes: According to the first target simulation result and multiple preset silicon melt temperatures, crystallization interface temperature pulsations corresponding to multiple first melt systems are obtained, wherein the first target simulation result is used to reflect the dynamic change relationship between the crystallization interface temperature pulsations of the silicon melt and the multiple silicon melt temperatures.

4. The control method according to claim 2, characterized in that: The step of determining second characteristic parameters corresponding to a plurality of second melt systems according to the second target simulation result and a plurality of preset magnetic field structure parameters includes: According to the second target simulation results and multiple preset hook-shaped magnetic field structure parameters, convective heat transfer characteristics corresponding to multiple second melt systems are obtained, wherein the second target simulation results are used to reflect the relationship between the convective heat transfer characteristics of the silicon melt and the changes in multiple hook-shaped magnetic field structure parameters, and the hook-shaped magnetic field structure parameters include the position and strength of the hook-shaped magnetic field.

5. The control method according to any one of claims 1 to 4, characterized in that: Determining target process conditions and target magnetic field structure parameters according to the plurality of characteristic parameters, the plurality of process conditions and the plurality of magnetic field structure parameters comprises: Determining whether the plurality of characteristic parameters meet corresponding preset conditions; When a first target characteristic parameter among the plurality of characteristic parameters satisfies a target preset condition, the process conditions and the magnetic field structure parameters corresponding to the first target characteristic parameter are determined as target process conditions and target magnetic field structure parameters.

6. The control method according to claim 5, characterized in that: Also includes: Adjustment step: when the first target characteristic parameter does not meet the target preset condition, output an adjustment signal to the single crystal furnace to adjust the process conditions and the magnetic field structure parameters corresponding to the first target characteristic parameter; Determining step: re-determining updated first target characteristic parameters corresponding to the silicon melt under the adjusted process conditions and / or magnetic field structure parameters according to the preset simulation method and the multi-physical field coupling numerical model; Determination step: determining whether the first target characteristic parameter meets the target preset condition; In the case that the first target characteristic parameter does not satisfy the target preset condition, the adjusting step, the determining step and the judging step are repeatedly performed until the first target characteristic parameter satisfies the target preset condition and then stops.

7. The control method according to claim 6, characterized in that: When the single crystal furnace receives the adjustment signal, the single crystal silicon growth is performed using the adjusted process conditions and / or magnetic field structure parameters, and the determining step includes: Generate a second target characteristic parameter corresponding to the silicon melt under the adjusted process conditions and / or magnetic field structure parameters according to the preset simulation method and the multi-physical field coupling numerical model, wherein the second target characteristic parameter is a characteristic parameter different from the first target characteristic parameter among the plurality of characteristic parameters; Acquiring target experimental data of the single crystal silicon growth, wherein the target experimental data and the second target characteristic parameter have the same characteristic type; Determine whether the difference between the second target characteristic parameter and the experimental data satisfies a preset difference; When the preset difference is met, the second target characteristic parameter is determined as the updated first target characteristic parameter.

8. A process control device for a single crystal silicon rod, characterized in that: include: A construction module is used to construct a multi-physical field coupling numerical model of silicon melt in a single crystal furnace, wherein the multi-physical field coupling numerical model is used to reflect the coupling relationship between the pulsating velocity field, temperature field and electromagnetic field inside the silicon melt; A generation module, for establishing a target coupling model by adopting a large eddy simulation method, the multi-physics field coupling numerical model and a crystal growth kinetics model, obtaining simulation results corresponding to a plurality of melt systems according to the target coupling model, and generating a plurality of characteristic parameters corresponding to the silicon melt under a plurality of process conditions and a plurality of magnetic field structure parameters according to the simulation results and a plurality of preset process conditions, wherein the target coupling model is used to reflect the dynamic change relationship between the melt flow characteristics and the crystallization interface parameters corresponding to the plurality of the melt systems, the simulation results are used to reflect the dynamic characteristics of the turbulent flow inside the silicon melt, any two of the melt systems have different dynamic characteristics, and the characteristic parameters are used to characterize the melt flow characteristics; A control module is used to determine target process conditions and target magnetic field structure parameters according to the plurality of characteristic parameters, the plurality of process conditions and the plurality of magnetic field structure parameters, and control the single crystal furnace to pull N-type single crystal silicon rods under the target process conditions and the target magnetic field structure parameters.

9. A crystal pulling system, characterized in that: include: A single crystal furnace, one or more processors, a memory, and one or more programs, wherein the one or more processors are electrically connected to the single crystal furnace, the one or more programs are stored in the memory and are configured to be executed by the one or more processors, and the one or more programs include a control method for executing the crystal pulling process described in any one of claims 1 to 7.

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