Polishing and cleaning equipment and polishing and cleaning method

Abstract

The invention relates to the technical field of semiconductor processing, discloses polishing and cleaning equipment and a polishing and cleaning method, and aims to solve the problem that a local dry area on the surface of a wafer can reduce the cleaning effect in the process that the wafer is transmitted and transferred between two nodes in the cleaning process after polishing. The polishing and cleaning equipment comprises a flushing module, a spray head, a flushing module and a transferring module. The washing module is used for washing the wafer, the nozzle is at least installed at the washing module, and the washing module is used for washing the wafer. The transfer module is used for moving the wafer from the washing module to the flushing module. Wherein the nozzle is used for spraying a first cleaning solution to the wafer, so that the surface of the wafer is completely covered by a liquid film of the first cleaning solution in the process of moving the wafer from the washing module to the flushing module. The polishing and cleaning equipment provided by the invention can improve the cleaning effect of the wafer.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor processing, and in particular to a polishing and cleaning device and a polishing and cleaning method. Background Art

[0002] After the wafer is polished by chemical and mechanical methods, there are many particles on the surface of the wafer, which need to be cleaned immediately, otherwise it will be difficult to remove after drying. The current wafer polishing equipment includes at least a polishing module and a cleaning part. After the wafer is polished by the polishing equipment, it immediately enters the cleaning module for cleaning to remove the particles adhered to the wafer surface, and then proceeds to the next process after drying.

[0003] In the cleaning module, after the wafer is cleaned by the previous node, the surface of the wafer is in a partially wet state with a mixture of droplet areas, liquid film areas, and dry areas. When the robot grabs the wafer and quickly transfers it between the two nodes, the droplets or liquid film remaining on the surface of the wafer will be thrown off, resulting in an increase in the dry area on the surface of the wafer. Since the particles on the surface of the wafer have a strong adhesion after drying, the subsequent rinsing nodes cannot effectively remove the particles on the surface of the wafer, making it difficult to effectively clean the wafer. Summary of the invention

[0004] In view of this, the present invention provides a polishing cleaning device and a polishing cleaning method to solve the problem that the local dry area on the surface of the wafer during the transfer between two nodes in the post-polishing cleaning process will reduce the cleaning effect.

[0005] On the one hand, the present application provides a polishing cleaning device, including a flushing module, a nozzle, a rinsing module and a transfer module. The flushing module is used to flush the wafer, the nozzle is at least installed at the flushing module, and the rinsing module is used to rinse the wafer. The transfer module is used to move the wafer from the flushing module to the rinsing module. Among them, the nozzle is used to spray a first cleaning liquid on the wafer, so that the surface of the wafer is completely covered by the liquid film of the first cleaning liquid during the process of the wafer moving from the flushing module to the rinsing module.

[0006] In some embodiments, the transfer module controls the wafer to move at a speed less than or equal to 2 m / s between the flushing module and the rinsing module. And / or, the transfer module controls the wafer to move at a maximum acceleration of 0.2-2 m / s between the flushing module and the rinsing module. 2 between.

[0007] In some embodiments, the transfer module includes a first robot for moving the wafer between the flush module and the rinse module.

[0008] In some embodiments, the flushing module includes a rolling brush unit and / or a brush unit. At least one side of the wafer is flushed and cleaned by the rolling brush unit. The polishing side of the wafer is flushed and cleaned by the brush unit.

[0009] In some embodiments, the flushing module includes a rolling brush unit and a brush unit, and at least the brush unit is provided with a nozzle. The transfer module includes a second robot, and the second robot is used to move the wafer from the rolling brush unit to the brush unit.

[0010] In some embodiments, the nozzle includes a first nozzle and a second nozzle. The brush unit is provided with the first nozzle, and the roller brush unit is provided with the second nozzle, so that when the wafer moves from the roller brush unit to the brush unit, the surface of the wafer is completely covered by the liquid film of the first cleaning liquid.

[0011] In some embodiments, a rinse nozzle is provided at the rinse module, and the rinse nozzle is used to sequentially spray the second cleaning liquid, the third cleaning liquid and the fourth cleaning liquid onto the wafer. The second cleaning liquid is a strong oxidizing solution, the third cleaning liquid is an acidic solution, and the fourth cleaning liquid is an alkaline solution.

[0012] In some embodiments, the polishing and cleaning equipment further includes a drying module, and the drying module is used to dry the rinsed wafer.

[0013] In some embodiments, the drying module is integrated with the washing module.

[0014] In a second aspect, the present application also provides a polishing and cleaning method, comprising the following steps:

[0015] The wafer is placed in the flushing module for flushing and cleaning, and the surface of the wafer is completely covered by the liquid film of the first cleaning liquid.

[0016] The wafer is moved to the rinsing module by using the transfer module, and the wafer is kept completely covered by the liquid film during the process of being moved to the rinsing module.

[0017] Beneficial effect: The surface of the wafer can be rinsed and cleaned by the flushing module to reduce the particles adhering to the surface of the wafer so that part or all of the particles are suspended in the liquid film of the first cleaning liquid formed on the surface of the wafer. Afterwards, when the wafer is moved from the flushing module to the rinsing module using the transfer module, because the surface of the wafer is completely covered by the liquid film formed by the first cleaning liquid sprayed from the nozzle, the surface of the wafer is prevented from having a large increase in the adhesion of particles due to drying, so that the subsequent rinsing module can effectively remove impurities such as particles in the liquid film on the surface of the wafer, thereby improving the cleaning effect of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0019] Figure 1 This is a schematic structural diagram of a first polishing and cleaning device according to an embodiment of the present application;

[0020] Figure 2 for Figure 1 A structural schematic diagram of a flushing module and a transfer module shown in;

[0021] Figure 3 This is a schematic structural diagram of a second polishing and cleaning device according to an embodiment of the present application;

[0022] Figure 4 A flow chart of a polishing and cleaning method according to an embodiment of the present application;

[0023] Figure 5 This is a flow chart of another polishing and cleaning method according to an embodiment of the present application.

[0024] Description of reference numerals:

[0025] 100. Polishing and cleaning equipment;

[0026] 10. Flushing module; 11. Roller brush unit; 12. Brush unit;

[0027] 20. nozzle; 21. first nozzle; 22. second nozzle;

[0028] 30. Flushing module; 31. Flushing nozzle;

[0029] 40. Transfer module; 41. First manipulator; 42. Second manipulator;

[0030] 50. Drying module. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of this application.

[0032] In the description of the present application, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0033] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0034] After the wafer is polished by chemical and mechanical methods, there are many particles on the surface of the wafer, which need to be cleaned immediately, otherwise it will be difficult to remove after drying. The current wafer polishing equipment includes at least a polishing module and a cleaning part. After the wafer is polished by the polishing equipment, it immediately enters the cleaning module for cleaning to remove the particles adhered to the wafer surface, and then proceeds to the next process after drying.

[0035] Due to the continuous progress of process nodes, the cleanliness requirements for chemical mechanical polishing and cleaning wafers are becoming more and more stringent. The current mainstream cleaning technology direction is serial cleaning, that is, the wafers enter the megasonic cleaning, brushing, drying and other chambers in sequence, and the wafer transfer between each chamber is carried out by a robot. In order to meet the requirements of equipment production capacity, the transmission speed of the robot is relatively fast.

[0036] In the cleaning module, after the wafer is cleaned by the previous node, the surface of the wafer is in a partially wet state with a mixture of droplet areas, liquid film areas and dry areas. When the robot grabs the wafer and quickly transfers it between the two nodes, the droplets or liquid film remaining on the surface of the wafer will be thrown off, resulting in an increase in the dry area on the surface of the wafer. Since the particles on the surface of the wafer have strong adhesion after drying, the subsequent rinsing nodes cannot effectively remove the particles on the surface of the wafer, making it difficult to effectively clean the wafer. As a result, the polished wafer cannot effectively remove particles when rinsing.

[0037] In view of this, the present application provides a polishing cleaning device and a polishing cleaning method to solve the problem that the local dry area on the surface of the wafer will reduce the cleaning effect during the transfer of the wafer between two nodes during the post-polishing cleaning process.

[0038] Combine the following Figures 1 to 5 , describing a polishing cleaning device and a polishing cleaning method according to an embodiment of the present application.

[0039] On the one hand, if Figure 1 As shown, the present application provides a polishing and cleaning device 100, including a flushing module 10, a nozzle 20, a rinse module 30 and a transfer module 40. The flushing module 10 is used to flush the wafer, such as the wafer can be a polished wafer or the like, the nozzle 20 is at least installed at the flushing module 10, the rinse module 30 is used to rinse the wafer, and the transfer module 40 is used to move the wafer from the flushing module 10 to the rinse module 30. Among them, the nozzle 20 is at least used to spray the first cleaning liquid (such as pure water or deionized water) on the wafer, so that the surface of the wafer is completely covered by the liquid film of the first cleaning liquid during the process of moving the wafer from the flushing module 10 to the rinse module 30.

[0040] In this way, the surface of the wafer can be rinsed and cleaned by the flushing module 10 to reduce the particles adhering to the surface of the wafer so that some or all of the particles are suspended in the liquid film of the first cleaning liquid formed on the surface of the wafer. Afterwards, in the process of using the transfer module 40 to move the wafer from the flushing module 10 to the rinsing module 30, because the surface of the wafer is completely covered by the liquid film formed by the first cleaning liquid sprayed by the nozzle 20, the surface of the wafer is prevented from greatly increasing the adhesion of particles due to drying, so that the subsequent rinsing module 30 can effectively remove impurities such as particles in the liquid film on the surface of the wafer, thereby improving the cleaning effect of the wafer.

[0041] For example, in the process of cleaning and moving the wafer, if it is necessary to make the surface of the wafer always completely covered by the liquid film of the first cleaning liquid, the first cleaning liquid can be sprayed on the surface of the wafer through the nozzle 20 during and after the flushing process of the flushing module 10, so that the surface of the wafer after the flushing is completed is completely covered by the liquid film of the first cleaning liquid.

[0042] In the spraying process after flushing is completed, the speed of the nozzle 20 spraying the first cleaning liquid can be reduced so that the liquid film formed by the first cleaning liquid on the surface of the wafer can completely cover the surface of the wafer, such as making the liquid film completely cover the polished surface of the wafer.

[0043] In the process of moving the wafer, the transfer module 40 controls the moving speed of the wafer between the flushing module 10 and the rinsing module 30 to be less than or equal to 2 m / s, so as to avoid the faster moving speed of the wafer causing part of the liquid film to separate from the wafer, thereby causing the surface area of ​​the wafer not covered by the liquid film to have a greater adhesion to the particles.

[0044] It should be noted that, in the process of moving the wafer through the transfer module 40, the maximum acceleration of the wafer needs to be controlled within 0.2-2 m / s. 2 For example, the acceleration of the wafer can be 0.2m / s 2 、0.4m / s2 、0.6m / s 2 、0.8m / s 2 , 1.0m / s 2 , 1.2m / s 2 , 1.4m / s 2 , 1.6m / s 2 , 1.8m / s 2 or 2m / s 2 If the maximum acceleration of the wafer during movement exceeds 2m / s 2 If the maximum acceleration of the wafer is less than 0.2m / s 2 , it will reduce the wafer moving speed, thereby reducing the wafer production efficiency. That is, by controlling the maximum acceleration of the wafer movement at 0.2-2m / s 2 It can not only protect the integrity of the liquid film on the wafer surface, but also enable the wafer to have higher production efficiency.

[0045] For the wafer, during the process of moving the wafer, its polishing surface may also be tilted toward the moving direction to prevent part of the liquid film on the polishing surface of the wafer from falling off during the movement.

[0046] In some embodiments, Figure 1 As shown, the transfer module 40 includes a first robot 41 , and the first robot 41 is used to move the wafer between the flushing module 10 and the rinsing module 30 .

[0047] By setting the first manipulator 41, the wafer can be accurately grasped at the flushing module 10, and the wafer can be accurately placed at the preset position of the flushing module 30. In this process, the first manipulator 41 can control the moving speed, moving acceleration and displacement angle of the wafer, so that the wafer can move smoothly and quickly, thereby preventing the liquid film on the wafer surface from falling off or being damaged.

[0048] Exemplarily, the moving speed of the first robot 41 may be controlled, such as setting the linear speed of the first robot 41 to be less than 2 m / s, so as to prevent the liquid film on the wafer surface from falling off.

[0049] In the process of flushing the wafer by the flushing module 10, as shown in FIG. Figure 1 As shown, the flushing module 10 may include at least one of a rolling brush unit 11 and a brush unit 12 .

[0050] At least one side of the wafer (such as the polishing surface) is washed and cleaned by the rolling brush unit 11. Since the roller of the rolling brush unit 11 has a large contact area with the wafer, the arrangement of the rolling brush unit 11 can increase the washing speed of particles on the wafer surface.

[0051] At the roller brush unit 11, the wafer is self-rotated by the first rotating assembly. The roller can also be self-rotated in conjunction with a drive shaft parallel to the surface of the wafer. The two self-rotating drive assemblies of the wafer and the roller can be installed either one or both, and there is no limitation on this.

[0052] Take the case where both the roller and the wafer can rotate by themselves. The upper and lower surfaces of the wafer are provided with rollers, which are in contact with or pressed against the surface of the wafer. The rollers on the upper and lower sides of the wafer rotate by themselves to brush the polished surface and the back side of the wafer at the same time. The nozzle 20 at least sprays the first cleaning liquid on the polished surface of the wafer to facilitate the roller to brush impurities such as particulate matter. At the same time, the wafer rotates by itself under the drive of the first rotating component, so that the rotating roller can completely cover and brush the polished surface and the back side of the wafer, so as to simultaneously rinse and clean the surfaces of both sides of the wafer.

[0053] In addition, the polished side of the wafer can also be washed and cleaned by the brush unit 12. In the brush unit 12, the wafer is rotated by the second rotating component, and the brush head swing arm drives the brush head to scan from the center to the edge of the wafer at a certain speed, so that the rotating brush can contact and brush the polished side of the wafer without dead angles, completing the cleaning of the entire wafer polishing surface.

[0054] Based on this, Figure 2 As shown, the flushing module 10 includes a roller brush unit 11 and a brush unit 12, and at least the brush unit 12 is provided with a nozzle 20. The transfer module 40 also includes a second manipulator 42, and the second manipulator 42 is used to move the wafer from the roller brush unit 11 to the brush unit 12. After the wafer is initially flushed and cleaned by the roller brush unit 11, it is moved to the brush unit 12 under the clamping of the second manipulator 42 for further flushing and cleaning, thereby improving the flushing and cleaning effect of the wafer.

[0055] Continue to refer to Figure 1 and Figure 2 The nozzle 20 includes a first nozzle 21 and a second nozzle 22 . The first nozzle 21 is disposed at the brush unit 12 , and the second nozzle 22 is disposed at the roller brush unit 11 .

[0056] Through the setting of the first nozzle 21, the brush unit 12 can reduce the amount of particles attached to the wafer surface through the first cleaning liquid sprayed by the first nozzle 21 during the process of brushing the wafer, and maintain complete liquid film coverage. After the brush unit 12 brushes, the first nozzle 21 can continue to spray the first cleaning liquid (such as pure water or deionized water) when necessary to ensure that the liquid film on the wafer surface is completely covered. The wafer is then moved to the flushing module 30 by the first manipulator 41 for flushing, and the liquid film on the wafer can be completely covered during the process.

[0057] Correspondingly, the second nozzle 22 arranged at the roller brush unit 11 is used to reduce the amount of particles attached to the wafer surface and maintain complete liquid film coverage through the first cleaning liquid sprayed by the second nozzle 22 during the process of brushing the wafer by the roller brush unit 11.

[0058] Furthermore, in the process of the wafer being moved from the roller brush unit 11 to the brush unit 12, the second nozzle 22 and the second manipulator 42 provided at the roller brush unit 11 cooperate to completely cover the surface of the wafer with the liquid film of the first cleaning liquid. This avoids the situation where the adhesion of the wafer to the particles at the brush unit 12 is greatly increased due to the shedding of part of the liquid film, thereby reducing the brushing effect at the brush unit 12. This is beneficial to improving the flushing and cleaning effect at the brush unit 12.

[0059] During the flushing process of the roller brush unit 11 and the brush unit 12 , the second nozzle 22 and the first nozzle 21 flush and clean the self-rotating wafer by spraying the first cleaning liquid, so that the particles on the surface of the wafer are removed by the flowing first cleaning liquid.

[0060] It should be noted that, when the flushing module 10 includes the rolling brush unit 11 and the brush unit 12 , the brush unit 12 is disposed on a side of the rolling brush unit 11 close to the flushing module 30 along the moving direction of the wafer.

[0061] In some other embodiments, such as Figure 3 As shown, the flushing module 10 may also include a rolling brush unit 11 . In this case, a first robot 41 is provided between the rolling brush unit 11 and the flushing module 30 for moving the wafer flushed by the rolling brush unit 11 to the flushing module 30 .

[0062] Alternatively, the flushing module 10 may also include only the brush unit 12 , that is, there is no need to arrange the second robot 42 and the roller brush unit 11 upstream of the brush unit 12 . The wafer flushed by the brush unit 12 is moved to the flushing module 30 by the first robot 41 .

[0063] In some embodiments, Figure 1 and Figure 3 As shown, the polishing and cleaning equipment 100 further includes a drying module 50, and the drying module 50 is used to dry the rinsed wafers.

[0064] By setting the drying module 50, the moisture on the wafer surface can be removed to avoid the introduction of new pollution, which is beneficial to maintaining the cleanliness of the wafer surface and can also improve the cleaning efficiency, thereby ensuring the surface quality of the wafer and the reliability of subsequent processes.

[0065] Alternatively, the rinsing module 30 and the drying module 50 may be arranged as a split structure, that is, a third robot is arranged between the rinsing module 30 and the drying module 50 to move the wafer rinsed by the rinsing module 30 to the drying module 50 for drying.

[0066] In some embodiments, Figure 1 and Figure 3 As shown, a rinse nozzle 31 is provided at the rinse module 30, and the rinse nozzle 31 is used to spray the second cleaning liquid, the third cleaning liquid and the fourth cleaning liquid onto the wafer in sequence.

[0067] Exemplarily, in the washing module 30, the wafer can also be rotated by the third rotating component, so that the second cleaning liquid, the third cleaning liquid and the fourth cleaning liquid sprayed by the washing nozzle 31 can fully flow on the surface of the wafer under the action of centrifugal force to wash away the particles and other impurities on the surface. In addition, the second cleaning liquid, the third cleaning liquid or the fourth cleaning liquid on the surface of the wafer can also be quickly dried by the action of centrifugal force. It is only necessary to control the rotation speed of the third rotating component, that is, the former rotates slower and the latter rotates faster.

[0068] It should be noted that the number of the flushing nozzles 31 can be one or more (such as three). If the number of the flushing nozzles 31 is one, the flushing nozzle 31 sprays the second cleaning liquid, the third cleaning liquid and the fourth cleaning liquid in sequence. If the number of the flushing nozzles 31 is three, each flushing nozzle 31 sprays one cleaning liquid (i.e., they are set in a one-to-one correspondence), and the multiple flushing nozzles 31 spray the second cleaning liquid, the third cleaning liquid and the fourth cleaning liquid in sequence.

[0069] The first cleaning liquid is a strong oxidizing solution, such as ozone water, or other strong oxidizing solutions. The strong oxidizing property of ozone is used to remove organic pollutants and metal pollutants on the surface of the wafer. It is environmentally friendly, highly efficient and economical, which helps to improve the output and yield of semiconductor products while reducing the impact on the environment.

[0070] The second cleaning solution is an acidic solution, such as a hydrofluoric acid solution. It can also be a mixed solution of hydrochloric acid and hydrogen peroxide or a mixed solution of sulfuric acid and hydrogen peroxide. By flushing with the acidic second cleaning solution, impurities such as metal ions, organic matter and natural oxide layer on the surface of the wafer can be effectively removed, thereby ensuring the performance and reliability of the semiconductor device.

[0071] The third cleaning solution is an alkaline solution, such as SC1 (StandardClean 1) alkaline mixed solution composed of ammonium hydroxide, hydrogen peroxide and deionized water, or APM (Ammonia Peroxide Mixture). Through the flushing of the alkaline third cleaning solution, particles, metal ions, organic matter and other pollutants on the surface of the wafer can be effectively removed to ensure the performance and reliability of semiconductor devices.

[0072] In the process of washing the wafer with the second cleaning liquid, the third cleaning liquid and the fourth cleaning liquid, the recovery bin provided in the washing module 30 rises accordingly to surround the wafer and the area below, the third rotating assembly drives the wafer to rotate, and the upper washing nozzle 31 sprays the corresponding second cleaning liquid, the third cleaning liquid or the fourth cleaning liquid. One of the cleaning liquids adheres to the surface of the wafer and is quickly thrown out under the action of centrifugal force, and is collected and classified by the recovery bin for recycling.

[0073] In some embodiments, Figure 1 and Figure 3 As shown, the drying module 50 is integrated with the rinsing module 30 .

[0074] By integrating the drying module 50 with the rinsing module 30 , it is possible to avoid the wafers that have been rinsed clean from being re-contaminated during the mobile drying process, which is beneficial to improving the cleanliness of the wafers.

[0075] Alternatively, the drying module 50 and the rinsing module 30 may be configured as a split structure, and it is sufficient to only provide a closed transmission channel and a robot in the rinsing module 30 and the drying module 50, and this is not limited.

[0076] Exemplarily, at the drying module 50, the drying module 50 includes a drying nozzle. The drying nozzle is used to spray a replacement liquid onto the wafer, and the replacement liquid may be an isopropyl alcohol solution. The drying module 50 then dries the replacement liquid such as isopropyl alcohol on the surface of the wafer by continuously blowing nitrogen gas, so that the wafer remains dry.

[0077] Among them, isopropyl alcohol solution is a polar solvent that can effectively dissolve moisture on the surface of the wafer, reduce surface tension, reduce water marks and particles, and help improve drying efficiency and have good environmental protection. Combining nitrogen to air-dry the isopropyl alcohol solution through the wafer surface can avoid the wafer from being entangled with water stains during the air-drying process, further improving the cleanliness of the wafer surface.

[0078] On the other hand, the present application also provides a polishing cleaning method, such as Figure 4 As shown, the polishing and cleaning method comprises:

[0079] Step S110: placing the wafer in a flushing module for flushing and cleaning, and making the surface of the wafer completely covered by a liquid film of the first cleaning liquid.

[0080] Step S210: Use the transfer module to move the wafer to the rinse module for rinse, and keep the wafer completely covered by the liquid film during the process of moving to the rinse module.

[0081] Since the above-mentioned polishing and cleaning method is applicable to the polishing and cleaning equipment in the previous aspect, that is, the polishing and cleaning method is a method-side solution corresponding to the polishing and cleaning equipment in the previous aspect, the polishing and cleaning method has all the beneficial effects of the above-mentioned polishing and cleaning equipment, which will not be repeated here.

[0082] In some other embodiments, such as Figure 5 As shown, the polishing and cleaning method specifically includes:

[0083] Step S111: placing the polished wafer into the rolling brush unit for flushing, and controlling the second nozzle to spray the first cleaning liquid onto the wafer after flushing, so that the surface of the wafer is completely covered by the liquid film.

[0084] Step S112: Control the second robot to move the wafer from the roller brush unit to the brush unit, and keep the wafer completely covered by the liquid film during the movement.

[0085] Step S113: Control the wafer to be flushed in the brush unit, and control the first nozzle to spray the first cleaning liquid onto the wafer after flushing, so that the wafer remains completely covered by the liquid film.

[0086] Step S211: Control the first robot to move the wafer from the brush unit to the rinse module, and keep the wafer completely covered by the liquid film during the movement.

[0087] Step S310: Control the rinsing module to rinse the wafer multiple times, and dry the wafer in the composite integrated drying module.

[0088] In step S112 and step S210, at least the wafer needs to be completely covered by the polishing liquid film during step S210. In the process of moving the wafer in step S112, maintaining complete coverage of the liquid film is conducive to improving the flushing and cleaning effect at the brush unit.

[0089] In addition, in step S112 and step S210, the wafer can be controlled to maintain complete coverage of the liquid film by controlling the moving speed of the robot, the moving acceleration, and the position angle of the wafer during the moving process. In addition, the first cleaning liquid can be continuously sprayed on the wafer by the large-angle spraying of the nozzle 20 or the setting of multiple nozzles 20 during the process of the robot moving the wafer, which can also maintain complete coverage of the liquid film on the wafer surface.

[0090] Although the embodiments of the present application are described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the present application, and such modifications and variations are all within the scope defined by the appended claims.

Claims

1. A polishing and cleaning device, characterized in that: include: A flushing module, used for flushing the wafer; A nozzle, installed at least at the flushing module; A rinsing module, used for rinsing the wafer; and a transfer module, the transfer module being used to move the wafer from the flushing module to the rinsing module; The nozzle is used to spray the first cleaning liquid onto the wafer, so that the surface of the wafer is completely covered by the liquid film of the first cleaning liquid when the wafer moves from the flushing module to the rinsing module.

2. The polishing and cleaning equipment according to claim 1, characterized in that: The transfer module controls the moving speed of the wafer between the flushing module and the rinsing module to be less than or equal to 2 m / s; And / or, the transfer module controls the maximum movement acceleration of the wafer between the flushing module and the rinsing module to be 0.2-2 m / s 2 between.

3. The polishing and cleaning equipment according to claim 1, characterized in that: The transfer module comprises: A first robot arm is used to move the wafer between the flushing module and the rinsing module.

4. The polishing and cleaning equipment according to claim 3, characterized in that: The flushing module comprises: A rolling brush unit, through which at least one side of the wafer is flushed and cleaned; and / or a brush unit, the polishing side of the wafer is flushed and cleaned by the brush unit.

5. The polishing and cleaning equipment according to claim 3, characterized in that: The flushing module includes a rolling brush unit and a brush unit, and at least the brush unit is provided with the spray head; The transfer module comprises: A second robot arm is used to move the wafer from the roller brush unit to the brush unit.

6. The polishing and cleaning equipment according to claim 5, characterized in that: The nozzle comprises: A first nozzle, the brush unit is provided with the first nozzle; and a second nozzle, the roller brush unit is provided with the second nozzle, so that when the wafer is moved from the roller brush unit to the brush unit, the surface of the wafer is completely covered by the liquid film of the first cleaning liquid.

7. The polishing and cleaning equipment according to claim 4, characterized in that: The rinsing module is provided with a rinsing nozzle, and the rinsing nozzle is used to spray the second cleaning liquid, the third cleaning liquid and the fourth cleaning liquid to the wafer in sequence; The second cleaning solution is a strong oxidizing solution, the third cleaning solution is an acidic solution, and the fourth cleaning solution is an alkaline solution.

8. The polishing and cleaning equipment according to any one of claims 1 to 7, characterized in that: The polishing and cleaning equipment also includes a drying module, which is used to dry the rinsed wafers.

9. The polishing and cleaning equipment according to claim 8, characterized in that: The drying module is integrated with the flushing module.

10. A polishing and cleaning method, characterized in that: include: Placing the wafer in the flushing module for flushing and cleaning, and making the surface of the wafer completely covered by the liquid film of the first cleaning liquid; The wafer is moved to a rinsing module by using a transfer module for rinsing, and the wafer is kept completely covered by a liquid film during the process of being moved to the rinsing module.

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