Power semiconductor module with common emitter
By designing a power semiconductor module with a common emitter, it uses a heat dissipation substrate and an insulated ceramic substrate, and solves the voltage overshoot and oscillation problems caused by parasitic inductors in traditional module packaging through reflow soldering and injection molding of silicone gels, which improves the Module reliability and integration.
Patent Information
- Application Number
- CN202411722683.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-28
- Publication Date
- 2025-02-07
AI Technical Summary
The binding line connection process used in the traditional silicon carbide device module packaging technology introduces a large parasitic inductor, resulting in voltage overshoot and oscillation during high-speed switching. When multi-chips are used in parallel, parallel connection is caused by differences in source parasitic inductors. Uneven current, uneven current distribution, and loss differences reduce module reliability.
Design a power semiconductor module with a common emitter, consisting of a heat dissipation substrate and an insulated ceramic substrate. The silicon carbide chip and the insulated ceramic substrate are connected by copper rows, and the resistor and the silicon carbide chip are connected by metal wires. The parasitic inductors are avoided by reflow soldering. And fill silicone gel in the injection molded shell for enhanced protection and isolation.
It effectively avoids voltage overshoot and oscillation problems, improves the reliability and integration of the module, reduces the possibility of damage and looseness of welding parts, and extends the service life of the module.
Smart Images
Figure CN119400787A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of power semiconductors and relates to a common emitter power semiconductor module. Background Art
[0002] With the continuous advancement of science and technology, electronic products are developing in the direction of high power and miniaturization. The traditional power electronic power module packaging is large and heavy, which does not meet the high power density and lightweight requirements of electric vehicles, rail transportation, aerospace and other fields. As an important development direction of future power semiconductors, silicon carbide power electronic devices have the characteristics of high frequency, high temperature and high efficiency, but their parasitic inductance is often relatively large. When used at high frequencies, it will cause large overshoot voltage, increased losses and poor heat dissipation, which limits the performance of silicon carbide.
[0003] In the production process of silicon carbide devices, in order to improve the chip yield, the area of a single silicon carbide chip is often smaller than that of silicon devices, which limits the current capacity of a single silicon carbide device. In actual high-current applications, it is often chosen to use multiple chips in parallel through module packaging to increase the current capacity.
[0004] However, since the current module packaging technology of silicon carbide devices still uses the packaging technology of traditional silicon devices, the wire bonding connection process used in the manufacturing process will introduce a large parasitic inductance, which will cause more serious voltage overshoot and oscillation during the high-speed switching process of the silicon carbide device. For the use scenario of multiple chips in parallel, there is also the problem of uneven parallel current caused by the difference in source parasitic inductance. The uneven current distribution will lead to differences in losses between different chips, reducing the reliability of the module.
[0005] Therefore, a common emitter power semiconductor module is designed to overcome the above problems. Summary of the invention
[0006] The purpose of the present invention is to overcome the shortcomings of the prior art and to provide a common emitter power semiconductor module which has a simple and reasonable structure, a convenient manufacturing process, a short manufacturing time and better performance.
[0007] The present invention is implemented through the following technical scheme: a common emitter power semiconductor module, comprising a power semiconductor module body, the power semiconductor module body consisting of a heat dissipation substrate and at least two insulating ceramic substrates arranged on the heat dissipation substrate, a silicon carbide chip and a resistor are installed on each of the insulating ceramic substrates, wherein the silicon carbide chip is connected to the insulating ceramic substrate through a copper bus, the resistor is connected to the silicon carbide chip through a metal wire, and power terminals and signal terminals are respectively arranged on the insulating ceramic substrate and the heat dissipation substrate.
[0008] Preferably, the power terminal is composed of at least two first power terminals and at least one second power terminal, wherein the upper portion of the first power terminal is an inverted L-shaped structure, a first circular through hole is provided on the top surface of the first power terminal, and the lower portion thereof is forked to form two bent first terminal pins with a first mounting hole, and the upper portion of the second power terminal is a C-shaped structure, a second circular through hole is provided on the top surface of the second power terminal, and the lower portion thereof is forked to form two bent second terminal pins with a second mounting hole, wherein each first power terminal is respectively mounted on each insulating ceramic substrate through the first terminal pin and is symmetrically arranged, and the second power terminal is arranged between two adjacent insulating ceramic substrates through the second terminal pins to connect the two adjacent insulating ceramic substrates.
[0009] Preferably, signal terminals are respectively arranged at the four corners of the heat dissipation substrate, a signal bracket which is integrally injection-molded with the signal terminal is arranged at the bottom of each signal terminal, and the bottom surface of the signal bracket is fixedly mounted on the heat dissipation substrate.
[0010] Preferably, an S-shaped buffer structure is provided in the middle of the signal bracket, located below the signal terminal, for buffering the welding part at the bottom of the signal terminal. Two pins are provided at the end of the buffer structure away from the signal terminal, for facilitating welding the signal terminal on the heat dissipation substrate.
[0011] Preferably, an injection-molded shell is provided on the outer side of the heat dissipation substrate, and the connection between the injection-molded shell and the heat dissipation substrate is fixed by sealant, so that the top surface of the heat dissipation substrate, the insulating ceramic substrate, the silicon carbide chip and the resistor are wrapped therein, and silicone gel is filled between the injection-molded shell and the heat dissipation substrate to ensure the normal use of the semiconductor module body.
[0012] Preferably: a protrusion corresponding to the position of the first power terminal and the second power terminal is respectively arranged in the middle position of the top surface of the injection-molded shell, an outer groove is arranged between adjacent protrusions, and a rectangular hole for the first power terminal and the second power terminal to pass through is arranged on the protrusion, and mounting holes corresponding to the signal terminal are arranged on both sides of the top surface of the injection-molded shell, and the first power terminal, the second power terminal and the signal terminal are respectively exposed after passing through the rectangular hole and the mounting hole, and a nut hole corresponding to the first circular through hole and the second circular through hole is arranged in the middle position of each protrusion.
[0013] Preferably, the insulating ceramic substrate consists of a first copper layer, an intermediate ceramic layer and a second copper layer, and the first copper layer, the intermediate ceramic layer and the second copper layer are arranged in sequence from top to bottom.
[0014] Preferably, the width of the injection-molded housing is 42 mm to 48 mm, the spacing between adjacent protrusions is 4 mm to 8 mm, and the spacing between nut holes is 4 mm to 8 mm.
[0015] Preferably, the copper busbar is a frame structure with multiple hollows in the middle to facilitate the installation of silicon carbide chips. A connecting block with a hook is provided at at least one end of the copper busbar, and the hook is clamped in a corresponding slot of the insulating ceramic substrate to ensure the stability of the copper busbar after installation.
[0016] Preferably, the middle positions on both sides of the injection-molded shell are concave to form a recessed area, through holes are provided in the recessed area, and mounting through holes corresponding to the through holes are provided on the heat dissipation substrate to facilitate the installation of the power semiconductor module body, and the recessed area can be used as a hand-held part for easy holding.
[0017] The semiconductor module of the present invention manufactures circuits in a power semiconductor module packaged with a width of 42-48 mm. Compared with the currently used packaging structure, it has the advantages of convenient process, short manufacturing time, strong performance, long life, etc., and effectively improves the module integration. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] Figure 1 It is a schematic diagram of the overall structure of the present invention; Figure 2 It is a schematic structural diagram of the main body of the power semiconductor module of the present invention; Figure 3 It is a schematic diagram of the structure of the injection-molded housing in the present invention; Figure 4 It is a schematic diagram of the structure of the copper busbar in the present invention; Figure 5 is a schematic structural diagram of the first power terminal in the present invention; Figure 6 is a schematic structural diagram of the second power terminal in the present invention; Figure 7 It is a schematic diagram of the structure of the signal support in the present invention; Figure 8 It is a schematic diagram of the structure of the signal terminal in the present invention. DETAILED DESCRIPTION
[0019] In order to enable those skilled in the art to more clearly understand the objectives, technical solutions and advantages of the present invention, the present invention is further described below in conjunction with the accompanying drawings and embodiments.
[0020] In the description of the present invention, it is necessary to understand that the orientation or position relationship indicated by the terms such as "up", "down", "left", "right", "inside", "outside", "horizontal" and "vertical" is based on the orientation or position relationship shown in the accompanying drawings, and is only for the convenience of describing the present invention, rather than indicating or implying that the device or original referred to must have a specific orientation, and therefore cannot be understood as a limitation on the present invention.
[0021] The present invention will be described in detail below with reference to the accompanying drawings: Figure 1-3 As shown, a common emitter power semiconductor module includes a power semiconductor module body, which is composed of a heat dissipation substrate 9 and at least two insulating ceramic substrates 10 arranged on the heat dissipation substrate 9. The insulating ceramic substrates are connected to the heat dissipation substrate by reflow soldering. A silicon carbide chip 11 and a resistor 12 are installed on each of the insulating ceramic substrates 10, wherein the silicon carbide chip 11 is connected to the insulating ceramic substrate 10 through a copper bus 13, and the resistor 12 is connected to the silicon carbide chip 11 through a metal wire. Power terminals and signal terminals 4 are also respectively arranged on the insulating ceramic substrate 10 and the heat dissipation substrate 9.
[0022] like Figure 5-6 As shown, the power terminal is composed of at least two first power terminals 5 and at least one second power terminal 6, wherein the upper portion of the first power terminal 5 is an inverted L-shaped structure, a first circular through hole 17 is provided on the top surface of the first power terminal 5, and the lower portion thereof is forked to form two bent first terminal pins 15 with a first mounting hole 18, and the upper portion of the second power terminal is a C-shaped structure, a second circular through hole 19 is provided on the top surface of the second power terminal 6, and the lower portion thereof is forked to form two bent second terminal pins 21 with a second mounting hole 20, wherein each first power terminal 5 is respectively mounted on each insulating ceramic substrate 10 through the first terminal pin 15 and is symmetrically arranged, and the second power terminal 6 is mounted between two adjacent insulating ceramic substrates 10 through the second terminal pin 21 to connect the two adjacent insulating ceramic substrates 10.
[0023] The semiconductor module of the present invention is mainly used for module packaging, wherein a silicon carbide chip (SiC chip) and a resistor are sintered onto an insulating ceramic substrate through silver paste. By using silver paste for sintering, good electrical performance connection can be achieved to ensure stable signal transmission; the insulating ceramic substrate, the copper bus, the first power terminal, the second power terminal and the signal terminal are reflow soldered onto a heat dissipation substrate to avoid introducing a large parasitic inductance, prevent voltage overshoot and oscillation problems, and effectively improve the reliability and integration of the module.
[0024] The bifurcated and outwardly separated first terminal pin and second terminal pin in the present invention effectively prevent the force applied during the installation process from being transmitted to the welding parts of the first power terminal and the second power terminal, and prevent the welding parts of the first power terminal and the second power terminal from being subjected to excessive force, thereby reducing the possibility of damage and loosening of the welding parts and improving the reliability and stability of the equipment.
[0025] The signal terminals 4 are respectively arranged at the four corners of the heat dissipation substrate 9 . The bottom of each signal terminal 4 is provided with a signal bracket 7 which is integrally injection-molded with the signal terminal 4 . The bottom surface of the signal bracket 7 is fixedly mounted on the heat dissipation substrate 9 .
[0026] like Figure 7-8 As shown, an S-shaped buffer structure 16 is provided at the middle position of the signal bracket 7, located at the lower part of the signal terminal 4, for buffering the welding part at the bottom of the signal terminal 4, effectively avoiding the force applied during the installation process from being transmitted to the welding part of the signal terminal, and two pins 22 are provided at the end of the buffer structure 16 away from the signal terminal 4, for facilitating the welding of the signal terminal 4 on the heat dissipation substrate 9.
[0027] An injection-molded shell 1 is provided on the outside of the heat dissipation substrate 9. The connection between the injection-molded shell 1 and the heat dissipation substrate 9 is fixed by sealant, and the top surface of the heat dissipation substrate 9, the insulating ceramic substrate 10, the silicon carbide chip 11 and the resistor 12 are wrapped therein. Silicone gel is filled between the injection-molded shell 1 and the heat dissipation substrate 9 to ensure the normal use of the semiconductor module body.
[0028] After curing, the silicone gel provides protection for the power chip inside the module, which can effectively avoid pollution from the external environment. In addition, the silicone gel has good insulation properties, which can effectively isolate external moisture and dust, prevent damage to the internal structure of the module, and increase the service life of the module.
[0029] A protrusion 2 corresponding to the position of the first power terminal 5 and the second power terminal 6 is respectively arranged in the middle position of the top surface of the injection-molded housing 1, and an outer groove 3 is arranged between adjacent protrusions 2. A rectangular hole 24 for the first power terminal 5 and the second power terminal 6 to pass through is arranged on the protrusion 2. Mounting holes 23 corresponding to the signal terminal 4 are arranged on both sides of the top surface of the injection-molded housing 1. The first power terminal 5, the second power terminal 6 and the signal terminal 4 are partially exposed after passing through the rectangular hole 24 and the mounting hole 23 respectively, and a nut hole 8 corresponding to the first circular through hole 17 and the second circular through hole 19 is arranged in the middle position of each protrusion 2.
[0030] The insulating ceramic substrate 10 comprises a first copper layer, an intermediate ceramic layer (composed of Al 2 O 3 or AlN or Si 3 N 4 material) and a second copper layer, and the first copper layer, the middle ceramic layer and the second copper layer are arranged from top to bottom in sequence.
[0031] The width of the injection-molded housing 1 is 42 mm to 48 mm, the spacing between adjacent protrusions 2 is 4 mm to 8 mm, and the spacing between nut holes 8 is 4 mm to 8 mm.
[0032] like Figure 4 As shown, the copper busbar 13 is a frame structure with multiple hollows in the middle, which is used to facilitate the installation of the silicon carbide chip 11. At least one end of the copper busbar 13 is provided with a connecting block 28 with a hook 14, and the hook is clamped in a corresponding slot 29 in the insulating ceramic substrate 10 to ensure the stability of the copper busbar 13 after installation.
[0033] The middle positions on both sides of the injection-molded housing 1 are concave to form a recessed area 25, a through hole 26 is provided at the recessed area 25, and mounting through holes 27 corresponding to the through holes 26 are provided on the heat dissipation substrate 9 to facilitate the installation of the power semiconductor module body, and the recessed area 25 can be used as a hand-held portion for easy hand-holding. Example
[0034] The power module of the present invention has two insulating ceramic substrates 10, the middle ceramic layer is made of Al 2 O 3 or AlN or Si 3 N 4 Made of ceramic layer material, it can maintain structural stability and performance in high temperature environment.
[0035] The middle ceramic layer has good corrosion resistance and can resist the erosion of chemical substances such as acids and alkalis, thus extending the service life of the material. It also has high hardness and strength, and can provide good mechanical support and protection to prevent the material from breaking and being damaged.
[0036] In summary, the present application provides a common-emitter power semiconductor module, which is mainly used for module packaging. The silicon carbide chip and resistor are sintered onto an insulating ceramic substrate by silver paste, and the insulating ceramic substrate, copper bus, first power terminal, second power terminal and signal terminal are reflow soldered onto a heat dissipation substrate, thereby avoiding the introduction of large parasitic inductance, avoiding voltage overshoot and oscillation problems, and effectively improving the reliability and integration of the module.
[0037] The specific embodiments described herein are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed by the present invention shall still be covered by the claims of the present invention.
Claims
1. A common emitter power semiconductor module, comprising a power semiconductor module body, characterized in that: The power semiconductor module body is composed of a heat dissipation substrate (9) and at least two insulating ceramic substrates (10) arranged on the heat dissipation substrate (9), and a silicon carbide chip (11) and a resistor (12) are mounted on each of the insulating ceramic substrates (10), wherein the silicon carbide chip (11) and the insulating ceramic substrate (10) are connected via a copper busbar (13), and the resistor (12) and the silicon carbide chip (11) are connected via a metal wire, and power terminals and signal terminals (4) are also respectively arranged on the insulating ceramic substrate (10) and the heat dissipation substrate (9).
2. The common emitter power semiconductor module according to claim 1, characterized in that: The power terminal is composed of at least two first power terminals (5) and at least one second power terminal (6), wherein the upper portion of the first power terminal (5) is in an inverted L-shaped structure, a first circular through hole (17) is provided on the top surface of the first power terminal (5), and the lower portion thereof forks to form two bent first terminal pins (15) with first mounting holes (18); the upper portion of the second power terminal is in a C-shaped structure, a second circular through hole (19) is provided on the top surface of the second power terminal (6), and the lower portion thereof forks to form two bent second terminal pins (21) with second mounting holes (20); wherein each first power terminal (5) is respectively mounted on each insulating ceramic substrate (10) via the first terminal pin (15) and is arranged symmetrically; and the second power terminal (6) is mounted between two adjacent insulating ceramic substrates (10) via the second terminal pin (21) to connect the two adjacent insulating ceramic substrates (10).
3. The common emitter power semiconductor module according to claim 1 or 2, characterized in that: Signal terminals (4) are respectively arranged at the four corners of the heat dissipation substrate (9); a signal bracket (7) which is integrally injection-molded with the signal terminal (4) is arranged at the bottom of each signal terminal (4); and the bottom surface of the signal bracket (7) is fixedly mounted on the heat dissipation substrate (9).
4. The common emitter power semiconductor module according to claim 3, characterized in that: An S-shaped buffer structure (16) is provided at the middle position of the signal bracket (7) and located below the signal terminal (4), and is used for buffering the welding part at the bottom of the signal terminal (4); and two pins (22) are provided at the end of the buffer structure (16) away from the signal terminal (4), and are used for facilitating welding of the signal terminal (4) on the heat dissipation substrate (9).
5. The common emitter power semiconductor module according to claim 4, characterized in that: An injection molded shell (1) is arranged on the outside of the heat dissipation substrate (9), and the connection between the injection molded shell (1) and the heat dissipation substrate (9) is fixed by means of a sealant, so that the top surface of the heat dissipation substrate (9), the insulating ceramic substrate (10), the silicon carbide chip (11) and the resistor (12) are wrapped therein, and silicone gel is filled between the injection molded shell (1) and the heat dissipation substrate (9), thereby ensuring the normal use of the semiconductor module body.
6. The common emitter power semiconductor module according to claim 5, characterized in that: The top surface of the injection molded housing (1) is provided with protrusions (2) corresponding to the positions of the first power terminal (5) and the second power terminal (6) at the middle position thereof, and an outer groove (3) is provided between adjacent protrusions (2). The protrusions (2) are provided with rectangular holes (24) for the first power terminal (5) and the second power terminal (6) to pass through. Mounting holes (23) corresponding to the signal terminal (4) are provided on both sides of the top surface of the injection molded housing (1). The first power terminal (5), the second power terminal (6) and the signal terminal (4) are exposed after passing through the rectangular holes (24) and the mounting holes (23) respectively. A nut hole (8) corresponding to the first circular through hole (17) and the second circular through hole (19) is provided at the middle position of each protrusion (2).
7. The common emitter power semiconductor module according to claim 5, characterized in that: The insulating ceramic substrate (10) consists of a first copper layer, an intermediate ceramic layer, and a second copper layer, and the first copper layer, the intermediate ceramic layer, and the second copper layer are arranged in sequence from top to bottom.
8. The common emitter power semiconductor module according to claim 6, characterized in that: The width of the injection-molded housing (1) is 42 mm to 48 mm, the spacing between adjacent protrusions (2) is 4 mm to 8 mm, and the spacing between the nut holes (8) is 4 mm to 8 mm.
9. The common emitter power semiconductor module according to claim 1 or 8, characterized in that: The copper busbar (13) is a frame structure with multiple hollowed-out portions in the middle, and is used to facilitate installation of the silicon carbide chip (11). A connecting block (28) with a hook (14) is provided at at least one end of the copper busbar (13), and the hook is engaged in a correspondingly arranged slot (29) in the insulating ceramic substrate (10), so as to ensure the stability of the copper busbar (13) after installation.
10. The common emitter power semiconductor module according to claim 6, characterized in that: The middle positions of both sides of the injection molded housing (1) are concave to form a recessed area (25), a through hole (26) is provided at the recessed area (25), and mounting through holes (27) corresponding to the through holes (26) are provided on the heat dissipation substrate (9) to facilitate mounting of the power semiconductor module body, and the recessed area (25) can be used as a hand-held portion for easy hand-holding.