Filter circuit topological structure, radio frequency module and electronic equipment
By connecting interdigit capacitors in parallel on the resonator of the filter and correcting the design parameters, the problem of shortage of chip areas of low-frequency and ultra-low-frequency filters is solved, and the effect of increasing the number of resonators and maintaining performance is achieved.
Patent Information
- Application Number
- CN202411518094.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-29
- Publication Date
- 2025-02-07
AI Technical Summary
When designing low-frequency and ultra-low-frequency filters, the filter chip area is short and the sufficient number of resonators cannot be loaded, resulting in limited performance.
The interdigit capacitors are connected in parallel on the resonator and their design parameters are corrected to reduce the area of the resonator while maintaining its original resonant performance.
By reducing the area of the resonator, the number of resonators that can be loaded on the filter chip is increased, which solves the problem of chip area shortage and ensures the performance of the filter.
Smart Images
Figure CN119401977A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor technology, and in particular to a filter circuit topology structure, a radio frequency module and an electronic device. Background Art
[0002] As devices become smaller, the board area left for filter chips is getting smaller and smaller. In addition, the chip area of the filter is closely related to the manufacturing cost. In the fierce market competition, companies urgently need to reduce the chip area of the filter to reduce the manufacturing cost. However, the small chip area often limits the space in the filter design. In the design layout of the filter, the filter chip is often not enough to load a large number of resonators. This shortage of chip area is particularly severe when designing low-frequency and ultra-low-frequency filters. Summary of the invention
[0003] In view of the above problems, the present application provides a filter circuit topology structure, a radio frequency module and an electronic device, which connects a cross-finger capacitor in parallel to the resonator and modifies the design parameters of the resonator to adjust it back to its original performance. In this way, the area of the resonator connected in parallel with the cross-finger capacitor is reduced, thereby achieving the purpose of reducing the area of the filter chip. The specific scheme is as follows:
[0004] A first aspect of the present application provides a filter circuit topology structure, the filter circuit topology structure comprising: a plurality of resonators;
[0005] The structure of at least one resonator among the plurality of resonators is improved to a target structure, the target structure comprising a target resonator and an interdigital capacitor connected in parallel with the target resonator;
[0006] The design parameters of the target resonator are determined based on the design parameters of the resonator before improvement and the design parameters of the interdigital capacitors, so that the resonance performance of the target structure is the same as the resonance performance of the resonator before improvement.
[0007] Preferably, in the filter circuit topology structure, the design parameters of the target resonator are determined based on the design parameters of the resonator before being improved and the design parameters of the interdigital capacitor, including:
[0008] Determining the number of interdigital electrode fingers of the target resonator based on the design parameters of the interdigital capacitor and the number of interdigital electrode fingers of the resonator before improvement;
[0009] The design parameters of the interdigital capacitor include at least one of the number of interdigital electrode fingers of the interdigital capacitor, the half-period of the interdigital capacitor, and the normalized aperture of the interdigital capacitor.
[0010] Preferably, in the above filter circuit topology, the number of interdigital electrode fingers of the target resonator is determined based on the design parameters of the interdigital capacitor and the number of interdigital electrode fingers of the resonator before being improved, including:
[0011] Based on the design parameters of the interdigital capacitor, the number of interdigital electrode fingers of the target resonator is determined by reducing the number of interdigital electrode fingers of the resonator before improvement.
[0012] Preferably, in the filter circuit topology structure, the design parameters of the target resonator are determined based on the design parameters of the resonator before being improved and the design parameters of the interdigital capacitor, including:
[0013] Determining a half period of the target resonator based on the design parameters of the interdigital capacitors and the half period of the resonator before being improved;
[0014] The design parameters of the interdigital capacitor include at least one of the number of interdigital electrode fingers of the interdigital capacitor, the half-period of the interdigital capacitor, and the normalized aperture of the interdigital capacitor.
[0015] Preferably, in the filter circuit topology structure, the determining of the half period of the target resonator based on the design parameters of the interdigital capacitors and the half period of the resonator before being improved comprises:
[0016] Based on the design parameters of the interdigital capacitors, the half period of the target resonator is determined by reducing the half period of the resonator before being improved.
[0017] Preferably, in the filter circuit topology structure, the design parameters of the target resonator are determined based on the design parameters of the resonator before being improved and the design parameters of the interdigital capacitor, including:
[0018] Based on the design parameters of the interdigital capacitors, the normalized aperture of the target resonator is determined by adjusting the normalized aperture of the resonator before being improved;
[0019] The design parameters of the interdigital capacitor include at least one of the number of interdigital electrode fingers of the interdigital capacitor, the half-period of the interdigital capacitor, and the normalized aperture of the interdigital capacitor.
[0020] Preferably, in the above filter circuit topology, the multiple resonators include multiple series resonators and multiple parallel resonators;
[0021] The structure of at least one resonator among the plurality of resonators connected in series is improved to a target structure.
[0022] Preferably, in the above filter circuit topology, the multiple resonators include multiple series resonators and multiple parallel resonators;
[0023] The structure of at least one resonator among the plurality of parallel-connected resonators is improved to a target structure.
[0024] A second aspect of the present application provides a radio frequency module, which includes the filter circuit topology structure described in any one of the above items.
[0025] A third aspect of the present application provides an electronic device, the electronic device comprising the filter circuit topology structure described in any one of the above items;
[0026] Or, the electronic device includes the radio frequency module mentioned above.
[0027] By means of the above technical solution, the present application provides a filter circuit topology structure, which includes: a plurality of resonators; the structure of at least one resonator among the plurality of resonators is improved to a target structure, the target structure including a target resonator and a finger capacitor connected in parallel with the target resonator; the design parameters of the target resonator are determined based on the design parameters of the resonator before being improved and the design parameters of the finger capacitor, so that the resonant performance of the target structure is the same as the resonant performance of the resonator before being improved. By connecting the finger capacitor in parallel to the resonator and correcting the design parameters of the resonator, the resonator is adjusted back to its original performance. In this way, the area of the resonator connected in parallel with the finger capacitor is reduced, thereby achieving the purpose of reducing the area of the filter chip. BRIEF DESCRIPTION OF THE DRAWINGS
[0028] The above and other features, advantages and aspects of the embodiments of the present disclosure will become more apparent with reference to the following detailed description in conjunction with the accompanying drawings. Throughout the accompanying drawings, the same or similar reference numerals represent the same or similar elements. It should be understood that the drawings are schematic and the originals and elements are not necessarily drawn to scale.
[0029] Figure 1 A schematic diagram of a filter circuit topology structure provided by an embodiment of the present invention;
[0030] Figure 2 It is a schematic diagram of a filter circuit topology structure in the prior art;
[0031] Figure 3 for Figure 2 A schematic diagram of the passband performance corresponding to the filter circuit topology shown;
[0032] Figure 4 for Figure 2 Schematic diagram of narrowband performance corresponding to the filter circuit topology shown;
[0033] Figure 5 is a schematic diagram of the layout of the resonator tp2;
[0034] Figure 6 A schematic diagram of a layout of a target structure provided by an embodiment of the present invention;
[0035] Figure 7 A method provided by an embodiment of the present invention Figure 1 The filter circuit topology shown and Figure 2 Schematic diagram of passband performance comparison of filter circuit topologies shown;
[0036] Figure 8 A method provided by an embodiment of the present invention Figure 1 The filter circuit topology shown and Figure 2 Schematic diagram comparing the narrowband performance of the filter circuit topologies shown. DETAILED DESCRIPTION
[0037] The embodiments of the present application are described below in conjunction with the drawings in the embodiments of the present application. The terms used in the implementation mode of the present application are only used to explain the specific embodiments of the present application, and are not intended to limit the present application. It is known to those skilled in the art that with the development of technology and the emergence of new scenarios, the technical solutions provided in the embodiments of the present application are also applicable to similar technical problems.
[0038] Surface acoustic wave resonators and filters are acoustic devices widely used in the radio frequency field. They combine low insertion loss and good suppression performance in a relatively small size. They are used to filter out interference from heterofrequency signals, attenuate some frequency components, and only allow specified frequency components. They are the technical basis for the application of wireless spectrum as a non-renewable scarce resource.
[0039] The specific principle can be simply understood as based on the piezoelectric properties of piezoelectric materials, using input and output transducer devices such as interdigital transducers to convert electrical signals into mechanical energy, which are then converted back into electrical signals after processing, in order to amplify the required signals, filter out noise signals and improve signal quality. It is widely used in various wireless communication devices.
[0040] At present, filters are mainly divided into SAW (Surface Acoustic Wave) filters and BAW (Bulk Acoustic Wave) filters. Surface acoustic wave is an elastic wave that is generated and propagated on the surface of a piezoelectric substrate with piezoelectric properties, and the amplitude decreases rapidly as the depth of the piezoelectric substrate increases. For SAW filters, their manufacturing cost is much lower than that of BAW filters. They are used in low-frequency bands, have low insertion loss and good suppression, and are temperature sensitive.
[0041] At the same time, it should be noted that SAW filters also have corresponding limitations. One of them is that they are easily affected by temperature changes. When the temperature rises, the stiffness of the substrate material tends to decrease and the sound velocity will also decrease. It can also be said that SAW filters have the defect of temperature drift, that is, the frequency will drift with the operating temperature. Therefore, based on the traditional SAW filter, TC-SAW filters, that is, temperature-compensated SAW filters, are produced accordingly. They mainly use temperature compensation layers (such as SiO 2 The temperature elastic properties of the piezoelectric layer are opposite to those of the piezoelectric layer, thereby compensating for the temperature drift characteristics.
[0042] It should be further explained that SAW filters also have product designs such as TF film SAW filters, and their POI multi-layer substrates often include Si substrates, piezoelectric film layers, temperature compensation layers and other dielectric layers.
[0043] Among them, the design of the filter often uses the resonator as the basic unit, which can form the corresponding topology and amplify the specified frequency component signal.
[0044] For TC-SAW filters or ordinary SAW filters or TF-SAW filters, as the devices become smaller and smaller, the board area left for the filter chip is getting smaller and smaller. In addition, the chip area of the filter is closely related to the manufacturing cost. In the fierce market competition, companies are eager to reduce the chip area of the filter to achieve the purpose of reducing manufacturing costs. However, the small chip area often limits the space in the filter design. In the design layout of the filter, the filter chip is often not enough to load a large number of resonators. This shortage of chip area is particularly severe when designing low-frequency and ultra-low-frequency filters.
[0045] Based on this, the embodiments of the present invention provide a filter circuit topology structure, a radio frequency module and an electronic device. On the resonator in the filter, by connecting a cross-finger capacitor in parallel to the resonator and correcting the design parameters of the resonator, the resonator is adjusted back to its original performance. In this way, the area of the resonator connected in parallel with the cross-finger capacitor is reduced, thereby achieving the purpose of reducing the area of the filter chip.
[0046] It should be noted that the technical solution provided in the embodiment of the present invention can be applied to a common SAW filter, a TC-SAW filter or a TF-SAW filter, and the specific type of the filter is not limited in the embodiment of the present invention.
[0047] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.
[0048] It should be noted that the directional words appearing in the present invention are based on the relative position relationship shown in the drawings and cannot be used as an absolute limitation to the present application.
[0049] refer to Figure 1 , Figure 1 A schematic diagram of a filter circuit topology structure provided by an embodiment of the present invention. The filter circuit topology structure provided by an embodiment of the present invention includes: a plurality of resonators. Exemplarily, it includes resonator ts1, resonator ts2, resonator ts3, resonator ts4, resonator tp1, resonator tp2, resonator tp3 and resonator tp4. Exemplarily, resonator tp2 is used as the resonator to be improved. It should be noted that, Figure 1 The structure of the resonator tp2 before the improvement is not illustrated in the example.
[0050] The structure of at least one resonator among the plurality of resonators is improved into a target structure 10 , wherein the target structure 10 includes a target resonator 11 and an interdigital capacitor C connected in parallel with the target resonator tp2 - 1 .
[0051] The design parameters of the target resonator 11 are determined based on the design parameters of the resonator before improvement and the design parameters of the interdigital capacitors C, so that the resonance performance of the target structure 10 is the same as the resonance performance of the resonator before improvement.
[0052] Specifically, in the embodiment of the present invention, a cross-finger capacitor C is connected in parallel to the resonator, and the design parameters of the resonator are corrected to adjust it back to its original performance. In this way, the area of the resonator connected in parallel with the cross-finger capacitor C is reduced, thereby achieving the purpose of reducing the area of the filter chip. In other words, the area of the target resonator 11 is smaller than the area of the resonator before the improvement. In the design layout of the filter, based on the smaller area of the target resonator 11, the filter chip can be loaded with a larger number of resonators, solving the problem of shortage of filter chip area when designing low-frequency and ultra-low-frequency filters.
[0053] Among them, the design parameters of the resonator include the number of interdigitated electrode fingers, half-period, and normalized aperture.
[0054] The design parameter of the number of interdigital electrode fingers of the resonator refers to the number of all interdigital electrode fingers on the bus bar in the interdigital electrode. For example, 50 interdigital electrode fingers are arranged on one bus bar in the interdigital electrode, and 50 interdigital electrode fingers are arranged on the other bus bar. Under this structure, the number of interdigital electrode fingers of the resonator is 100.
[0055] The half-period of the resonator is a design parameter that refers to the time it takes for the resonator to return to a certain state (such as maximum displacement or maximum voltage) after half a vibration period.
[0056] In simple harmonic oscillation, a complete cycle (T) is the time required to start from a maximum displacement (or maximum voltage) point, pass through the minimum displacement (or zero voltage) point, and then return to the original maximum displacement (or maximum voltage) point. Therefore, a half cycle (T / 2) is half of this time, that is, the time required to go from the maximum displacement (or maximum voltage) point to the minimum displacement (or zero voltage) point, or vice versa.
[0057] For a resonator, its half-period depends on the natural frequency (f) of the resonator, which is determined by the physical properties of the resonator (such as mass, elastic modulus, inductance, capacitance, etc.), where f=1 / T.
[0058] In practical applications, the half-period of a resonator is crucial to the performance of designed circuits and systems. For example, in wireless communication systems, the half-period of a resonator determines the rate and efficiency of signal processing; in audio equipment, the half-period of a resonator affects the sound quality and response speed.
[0059] Based on the design parameter of the resonator's normalized aperture, the physical size of the resonator is compared with the wavelength to determine the performance and design of the resonator. The normalized aperture is an important parameter that measures the relationship between the resonator size and the operating wavelength, which directly affects the resonator's frequency response, bandwidth, directivity and other characteristics.
[0060] In an optional embodiment of the present invention, one implementation method of determining the design parameters of the target resonator 11 based on the design parameters of the resonator before improvement and the design parameters of the interdigital capacitor C is:
[0061] Based on the design parameters of the interdigital capacitor C, the number of interdigital electrode fingers of the target resonator 11 is determined by reducing the number of interdigital electrode fingers of the resonator before improvement.
[0062] The design parameters of the interdigital capacitor include at least one of the number of interdigital electrode fingers of the interdigital capacitor, the half-period of the interdigital capacitor, and the normalized aperture of the interdigital capacitor.
[0063] Specifically, in an embodiment of the present invention, the improvement of the resonator is achieved based on the design parameter of the number of interdigital electrode fingers combined with the design parameter of the interdigital capacitor C. When the design parameter of the interdigital capacitor C is determined, the impedance change brought by the interdigital capacitor C is adjusted by reducing the number of interdigital electrode fingers of the resonator before the improvement, so that the resonance performance of the target structure 10 is the same as the resonance performance of the resonator before the improvement. Since the number of interdigital electrode fingers of the target resonator 11 is based on the design parameter of the interdigital capacitor C and is determined by reducing the number of interdigital electrode fingers of the resonator before the improvement. Therefore, the number of interdigital electrode fingers of the target resonator 11 is less than the number of interdigital electrode fingers of the resonator before the improvement. When the number of interdigital electrode fingers is reduced, the area of the target resonator 11 will be less than the area of the resonator of the resonator before the improvement. In the design layout of the filter, based on the target resonator 11 with a smaller area, the filter chip can be loaded with more resonators, solving the problem of shortage of filter chip area when designing low-frequency and ultra-low-frequency filters.
[0064] In an optional embodiment of the present invention, another implementation method of determining the design parameters of the target resonator 11 based on the design parameters of the resonator before improvement and the design parameters of the interdigital capacitor C is:
[0065] Based on the design parameters of the interdigital capacitance C, the half period of the target resonator 11 is determined by reducing the half period of the resonator before being improved.
[0066] The design parameters of the interdigital capacitor include at least one of the number of interdigital electrode fingers of the interdigital capacitor, the half-period of the interdigital capacitor, and the normalized aperture of the interdigital capacitor.
[0067] Specifically, in the embodiment of the present invention, the improvement of the resonator is achieved based on the design parameter of the half-period combined with the design parameter of the interdigital capacitor C. When the design parameter of the interdigital capacitor C is determined, the resonant frequency change caused by the interdigital capacitor C is adjusted by reducing the half-period of the resonator before the improvement, so that the resonant performance of the target structure 10 is the same as the resonant performance of the resonator before the improvement.
[0068] In an optional embodiment of the present invention, another implementation method of determining the design parameters of the target resonator 11 based on the design parameters of the resonator before improvement and the design parameters of the interdigital capacitor C is:
[0069] Based on the design parameters of the interdigital capacitor C, the number of interdigital electrode fingers of the target resonator tp2-1 is determined by reducing the number of interdigital electrode fingers of the resonator before improvement; and based on the design parameters of the interdigital capacitor, the half-period of the target resonator is determined by reducing the half-period of the resonator before improvement.
[0070] The design parameters of the interdigital capacitor include at least one of the number of interdigital electrode fingers of the interdigital capacitor, the half-period of the interdigital capacitor, and the normalized aperture of the interdigital capacitor.
[0071] Specifically, in an embodiment of the present invention, the improvement of the resonator is achieved based on the two design parameters of the number of forked electrode fingers and the half-period combined with the design parameters of the forked capacitor C. When the design parameters of the forked capacitor C are determined, the impedance change brought about by the forked capacitor C is adjusted by reducing the number of forked electrode fingers of the resonator before the improvement; and when the design parameters of the forked capacitor C are determined, the resonant frequency change brought about by the forked capacitor C is adjusted by reducing the half-period of the resonator before the improvement. Thereby, the resonance performance of the target structure 10 is made to be the same as the resonance performance of the resonator before the improvement to the greatest extent, and the working performance of the filter circuit topology before the improvement is ensured to be the same as the working performance of the filter circuit topology after the improvement. In other words, without changing the working performance of the filter circuit topology, the technical solution can enable the filter chip to load a larger number of resonators based on the target resonator 11 with a smaller area, thereby solving the problem of shortage of filter chip area when designing low-frequency and ultra-low-frequency filters.
[0072] refer to Figure 2 , Figure 2 A schematic diagram of a filter circuit topology structure in the prior art is shown in FIG. Figure 3 , Figure 3 for Figure 2 The passband performance diagram corresponding to the filter circuit topology shown is shown in Figure 1. Figure 4 , Figure 4 for Figure 2 The narrowband performance diagram corresponding to the filter circuit topology shown in FIG. The filter circuit topology includes resonator TS1, resonator TS2, resonator TS3, resonator TS4, resonator TP1, resonator TP2, resonator TP3 and resonator TP4.
[0073] like Figure 1 As shown, based on this technical solution Figure 2 The resonator tp2 in the filter circuit topology shown is improved so that an interdigital capacitor C is connected in parallel.
[0074] in, Figure 2The resonator tp2 shown is the resonator before being improved. The design parameters of the resonator tp2 include the number of interdigitated electrode fingers being 215, the half period being 1.11, and the normalized aperture being 26. Figure 5 , Figure 5 This is a schematic diagram of the layout of resonator tp2. The layout area of resonator tp2 is about 18663.55μm 2 .
[0075] The resonator tp2 is improved by connecting a 0.75PF interdigital capacitor C in parallel. The design parameters of the 0.75PF interdigital capacitor C include the number of interdigital electrode fingers of the interdigital capacitor C being 80, the half period of the interdigital capacitor being 0.9, and the normalized aperture of the interdigital capacitor being 26.
[0076] Afterwards, based on the design parameters of the parallel 0.75PF interdigital capacitor C and the design parameters of the resonator tp2, the design parameters of the target resonator 11 in the target structure 10 are determined. Specifically, based on the design parameters of the parallel 0.75PF interdigital capacitor C, the number of interdigital electrode fingers of the target resonator 11 is determined by reducing the number of interdigital electrode fingers of the resonator tp2; and based on the design parameters of the interdigital capacitor C, the half period of the target resonator 11 is determined by reducing the half period of the resonator tp2.
[0077] In the design parameters of the target resonator 11 in the embodiment of the present invention, the number of interdigitated electrode fingers is 60, the half period is 1.077, and the normalized aperture is 26. Figure 6 , Figure 6 A schematic diagram of a layout of a target structure provided in an embodiment of the present invention, wherein the layout area of the 0.75PF interdigital capacitor C is approximately 3036.64 μm 2 , the layout area of the target resonator 11 is about 6867.41μm 2 .
[0078] refer to Figure 7 , Figure 7 A method provided by an embodiment of the present invention Figure 1 The filter circuit topology shown and Figure 2 Schematic diagram of the passband performance comparison of the filter circuit topology shown, refer to Figure 8 , Figure 8 A method provided by an embodiment of the present invention Figure 1 The filter circuit topology shown and Figure 2 Schematic diagram comparing the narrowband performance of the filter circuit topologies shown. Figure 7 The middle curve 1 indicates Figure 1 The passband performance curve of the filter circuit topology shown in Figure 2 shows Figure 2The passband performance curves of the filter circuit topology shown, curve 1 and curve 2 almost completely overlap. Figure 8 The middle curve 3 indicates Figure 1 The narrowband performance curve of the filter circuit topology shown in Figure 4 shows Figure 2 Narrowband performance curves for the filter circuit topology shown.
[0079] based on Figure 5 and Figure 6 By comparing the area occupied by the layout in , it can be seen that the improvement of the resonator by this technical solution reduces the area of the resonator by about 47%.
[0080] based on Figure 7 and Figure 8 As shown, the improvement of the resonator by the technical solution hardly causes the filter performance to deteriorate. The technical solution can also further perform similar operations on other resonators in the filter circuit topology structure to achieve the purpose of reasonably arranging the resonators to make the chip compact and reduce the chip area.
[0081] In an optional embodiment of the present invention, another implementation method of determining the design parameters of the target resonator 11 based on the design parameters of the resonator before improvement and the design parameters of the interdigital capacitor C is:
[0082] Based on the design parameters of the interdigital capacitor C, the number of interdigital electrode fingers of the target resonator 11 is determined by reducing the number of interdigital electrode fingers of the resonator before improvement; and based on the design parameters of the interdigital capacitor C, the half-period of the target resonator 11 is determined by reducing the half-period of the resonator before improvement; and based on the design parameters of the interdigital capacitor C, the normalized aperture of the target resonator 11 is determined by adjusting the normalized aperture of the resonator before improvement.
[0083] The design parameters of the interdigital capacitor include at least one of the number of interdigital electrode fingers of the interdigital capacitor, the half-period of the interdigital capacitor, and the normalized aperture of the interdigital capacitor.
[0084] Specifically, in the embodiment of the present invention, the improvement of the resonator is achieved based on the three design parameters of the number of interdigital electrode fingers, the half-period, and the normalized aperture combined with the design parameters of the interdigital capacitor C. Since the design parameters of the resonator do not only include the above three design parameters, in some optional embodiments, other design parameters of the resonator can also be combined with the design parameters of the parallel interdigital capacitor C to make a comprehensive adjustment, so as to maximize the resonant performance of the target structure 10 and the resonant performance of the resonator before the improvement, that is, to ensure that the working performance of the filter circuit topology before the improvement is the same as the working performance of the filter circuit topology after the improvement.
[0085] In an optional embodiment of the present invention, the plurality of resonators include a plurality of series-connected resonators and a plurality of parallel-connected resonators.
[0086] The structure of at least one resonator among the plurality of resonators connected in series is improved into a target structure 10 .
[0087] Alternatively, the structure of at least one resonator among the plurality of parallel-connected resonators is improved to the target structure 10 .
[0088] Alternatively, the structure of at least one resonator among the plurality of resonators connected in series is improved to the target structure 10 , and the structure of at least one resonator among the plurality of resonators connected in parallel is improved to the target structure 10 .
[0089] Specifically, in the embodiments of the present invention, Figure 1 As shown, it includes a plurality of resonators TS1, resonator TS2, resonator TS3 and resonator TS4 connected in series. Based on the present technical solution, the structure of at least one resonator among the plurality of resonators connected in series can be improved to become the target structure 10, or the structures of all resonators among the plurality of resonators connected in series can be improved at the same time to become the target structure 10. Similarly, based on the present technical solution, the structure of at least one resonator among the plurality of resonators connected in parallel can be improved to become the target structure 10, or the structures of all resonators among the plurality of resonators connected in parallel can be improved at the same time to become the target structure 10. In some optional embodiments, the structures of the plurality of resonators connected in series and the plurality of resonators connected in parallel can be improved at the same time to become the target structure 10, or the structures of an adjacent resonator connected in series and an adjacent resonator connected in parallel can be improved to become the target structure 10.
[0090] In other words, the improvement of the resonator in the filter circuit topology structure based on the present technical solution is not limited by factors such as the circuit connection method of the resonator and the position of the resonator in the chip structure, and can be determined according to actual conditions and is not limited in the embodiments of the present invention.
[0091] Based on the above embodiments of the present invention, a radio frequency module is further provided in another embodiment of the present invention. The radio frequency module includes the filter circuit topology structure described in the above embodiments of the present invention.
[0092] Based on the above embodiments of the present invention, in another embodiment of the present invention, an electronic device is further provided, which includes the filter circuit topology structure described in the above embodiments of the present invention; or, the electronic device includes the radio frequency module described in the above embodiments of the present invention.
[0093] The filter circuit topology structure, RF module and electronic device provided by the present invention are introduced in detail above. The principles and implementation methods of the present invention are explained in this article using specific examples. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present invention.
[0094] It should be noted that each embodiment in this specification is described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part description.
[0095] It should also be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device that includes a series of elements is inherent to the elements, or also includes elements inherent to these processes, methods, articles or devices. In the absence of further restrictions, the elements defined by the sentence "including a..." do not exclude the presence of other identical elements in the process, method, article or device that includes the elements.
[0096] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A filter circuit topology structure, characterized in that: The filter circuit topology includes: a plurality of resonators; The structure of at least one resonator among the plurality of resonators is improved to a target structure, the target structure comprising a target resonator and an interdigital capacitor connected in parallel with the target resonator; The design parameters of the target resonator are determined based on the design parameters of the resonator before improvement and the design parameters of the interdigital capacitors, so that the resonance performance of the target structure is the same as the resonance performance of the resonator before improvement.
2. The filter circuit topology structure according to claim 1, characterized in that: Determining the design parameters of the target resonator based on the design parameters of the resonator before being improved and the design parameters of the interdigital capacitors includes: Determining the number of interdigital electrode fingers of the target resonator based on the design parameters of the interdigital capacitor and the number of interdigital electrode fingers of the resonator before improvement; The design parameters of the interdigital capacitor include at least one of the number of interdigital electrode fingers of the interdigital capacitor, the half-period of the interdigital capacitor, and the normalized aperture of the interdigital capacitor.
3. The filter circuit topology structure according to claim 2, characterized in that: The determining the number of interdigital electrode fingers of the target resonator based on the design parameters of the interdigital capacitor and the number of interdigital electrode fingers of the resonator before being improved comprises: Based on the design parameters of the interdigital capacitor, the number of interdigital electrode fingers of the target resonator is determined by reducing the number of interdigital electrode fingers of the resonator before improvement.
4. The filter circuit topology structure according to any one of claims 1 to 3, characterized in that: Determining the design parameters of the target resonator based on the design parameters of the resonator before being improved and the design parameters of the interdigital capacitors includes: Determining a half period of the target resonator based on the design parameters of the interdigital capacitors and the half period of the resonator before being improved; The design parameters of the interdigital capacitor include at least one of the number of interdigital electrode fingers of the interdigital capacitor, the half-period of the interdigital capacitor, and the normalized aperture of the interdigital capacitor.
5. The filter circuit topology structure according to claim 4, characterized in that: The determining the half period of the target resonator based on the design parameters of the interdigital capacitors and the half period of the resonator before being improved includes: Based on the design parameters of the interdigital capacitors, the half period of the target resonator is determined by reducing the half period of the resonator before being improved.
6. The filter circuit topology structure according to claim 1, characterized in that: Determining the design parameters of the target resonator based on the design parameters of the resonator before being improved and the design parameters of the interdigital capacitors includes: Based on the design parameters of the interdigital capacitors, the normalized aperture of the target resonator is determined by adjusting the normalized aperture of the resonator before being improved; The design parameters of the interdigital capacitor include at least one of the number of interdigital electrode fingers of the interdigital capacitor, the half-period of the interdigital capacitor, and the normalized aperture of the interdigital capacitor.
7. The filter circuit topology structure according to claim 1, characterized in that: The plurality of resonators include a plurality of resonators connected in series and a plurality of resonators connected in parallel; The structure of at least one resonator among the plurality of resonators connected in series is improved to a target structure.
8. The filter circuit topology structure according to claim 1 or 7, characterized in that: The plurality of resonators include a plurality of resonators connected in series and a plurality of resonators connected in parallel; The structure of at least one resonator among the plurality of parallel-connected resonators is improved to a target structure.
9. A radio frequency module, characterized in that: The radio frequency module includes the filter circuit topology structure described in any one of claims 1-8.
10. An electronic device, characterized in that: The electronic device comprises the filter circuit topology structure according to any one of claims 1 to 8; Or, the electronic device includes the radio frequency module described in claim 9.