Display substrate, manufacturing method thereof and display device

Abstract

The invention provides a display substrate, a manufacturing method thereof and a display device, and belongs to the technical field of display. The display substrate includes: a substrate; the source electrode is located on the substrate and extends in the first direction; the semiconductor layer is positioned on one side of the source far away from the substrate; the gate insulating layer is positioned on one side of the semiconductor layer away from the substrate; the grid electrode is located on the side, away from the substrate, of the grid insulating layer and extends in the second direction, and the first direction intersects with the second direction; wherein the semiconductor layer comprises a conductive first part and a non-conductive second part, the first part serves as a drain electrode, the orthographic projection of the second part on the substrate is overlapped with the orthographic projection of the source electrode on the substrate, and the orthographic projection of the second part on the substrate is located in the orthographic projection of the grid electrode on the substrate; the orthographic projection of the first part on the substrate is not overlapped with the orthographic projection of the gate on the substrate. The pixel density of the display substrate can be improved.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a display substrate and a manufacturing method thereof, and a display device. Background Art

[0002] With the development of display technology, it is necessary to improve the pixel density (Pixels Per Inch, PPI) of display devices.

[0003] In order to increase the pixel density of the display device, it is necessary to reduce the footprint of the thin film transistor in the related technology. However, when the footprint of the thin film transistor is reduced, the channel of the thin film transistor will become smaller. When the channel of the thin film transistor becomes smaller, the characteristics of the thin film transistor are prone to abnormalities, such as negative threshold voltage Vth or large current. Continuing to reduce the size of the thin film transistor will not only result in a more obvious short channel effect, but also put higher requirements on the manufacturing equipment and manufacturing process. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide a display substrate and a manufacturing method thereof, and a display device, which are beneficial to improving the pixel density of the display substrate.

[0005] To solve the above technical problems, the embodiments of the present invention provide the following technical solutions:

[0006] In one aspect, a display substrate is provided, comprising:

[0007] substrate;

[0008] A source electrode of the thin film transistor located on the substrate, the source electrode extending along a first direction;

[0009] a light-transmitting semiconductor layer located on a side of the source electrode away from the substrate;

[0010] a gate insulating layer located on a side of the semiconductor layer away from the substrate;

[0011] a gate of the thin film transistor located on a side of the gate insulating layer away from the substrate, the gate extending along a second direction, the first direction intersecting the second direction;

[0012] The semiconductor layer includes a conductive first part and a non-conductive second part, the first part serves as a drain of the thin film transistor, the orthographic projection of the second part on the substrate overlaps with the orthographic projection of the source on the substrate, the orthographic projection of the second part on the substrate is located within the orthographic projection of the gate on the substrate, and the orthographic projection of the first part on the substrate does not overlap with the orthographic projection of the gate on the substrate.

[0013] In some embodiments, the display substrate further comprises:

[0014] A data line, wherein the data line and the source electrode are integrally structured;

[0015] A gate line is an integrated structure with the gate.

[0016] In some embodiments, the data line and the gate line define a pixel area, the first portion covers the pixel area, and an orthographic projection of the first portion on the substrate does not overlap with an orthographic projection of the source electrode on the substrate.

[0017] In some embodiments, the source includes:

[0018] A conductive layer and a functional layer are stacked, wherein the conductive layer is made of a conductive material with a work function greater than >4.7 eV, and the functional layer is used to improve the work function of the conductive layer.

[0019] In some embodiments, the semiconductor layer is made of metal oxide semiconductor.

[0020] In some embodiments, the semiconductor layer has a thickness of 20-80 nm.

[0021] An embodiment of the present invention further provides a display device, comprising the display substrate as described above.

[0022] An embodiment of the present invention further provides a method for manufacturing a display substrate, comprising:

[0023] providing a substrate;

[0024] forming a source electrode of a thin film transistor on the substrate, wherein the source electrode extends along a first direction;

[0025] forming a light-transmitting semiconductor layer on a side of the source electrode away from the substrate;

[0026] forming a gate insulating layer on a side of the semiconductor layer away from the substrate;

[0027] forming a gate of a thin film transistor on a side of the gate insulating layer away from the substrate, the gate extending along a second direction, and the first direction intersects the second direction;

[0028] The semiconductor layer is conductorized using the gate as a mask to form a first conductorized part and a second non-conductorized part, the first part serves as a drain of the thin film transistor, the orthographic projection of the second part on the substrate overlaps with the orthographic projection of the source on the substrate, the orthographic projection of the second part on the substrate is located within the orthographic projection of the gate on the substrate, and the orthographic projection of the first part on the substrate does not overlap with the orthographic projection of the gate on the substrate.

[0029] In some embodiments, the data lines and gate lines of the display substrate define a pixel area, and forming the semiconductor layer includes:

[0030] The semiconductor layer covering the pixel region and located on a side of the source electrode away from the substrate is formed.

[0031] In some embodiments, forming the source includes:

[0032] A conductive layer and a functional layer are stacked to form a conductive layer, wherein the conductive layer is made of a conductive material having a work function greater than 4.7 eV, and the functional layer is used to improve the work function of the conductive layer.

[0033] The embodiments of the present invention have the following beneficial effects:

[0034] In the above scheme, the non-conductorized second part of the semiconductor layer is used as the active layer of the thin film transistor, and the orthographic projection of the second part on the substrate is located within the orthographic projection of the gate on the substrate, so that the active layer of the thin film transistor is hidden in the area where the gate is located, does not occupy the area of ​​the pixel area, does not need to reduce the area of ​​the active layer, avoids the short channel effect, and can reduce the requirements for manufacturing equipment and manufacturing processes; in addition, the conductorized first part of the semiconductor layer is used as the drain of the thin film transistor, which can reduce the area occupied by the opaque part of the thin film transistor, which is beneficial to improve the pixel density of the display substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 A schematic plan view of forming a source electrode according to an embodiment of the present invention;

[0036] Figure 2 for Figure 1 Schematic diagram of the cross section in the AA direction;

[0037] Figure 3 A schematic diagram of forming a semiconductor layer according to an embodiment of the present invention;

[0038] Figure 4 for Figure 3 Schematic diagram of the cross section in the AA direction;

[0039] Figure 5 A schematic diagram of forming a gate line according to an embodiment of the present invention;

[0040] Figure 6 for Figure 5 Schematic diagram of the cross section in the AA direction;

[0041] Figure 7 A schematic diagram of conducting a portion of a semiconductor layer according to an embodiment of the present invention;

[0042] Figure 8 for Figure 7 Schematic diagram of the cross section along the BB direction.

[0043] Reference numerals

[0044] 10 Buffer layer

[0045] 11 Source

[0046] 12 Semiconductor layer

[0047] 13. Gate insulation layer

[0048] 14 Gate

[0049] 121 Drain DETAILED DESCRIPTION

[0050] In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention more clear, a detailed description will be given below with reference to the accompanying drawings and specific embodiments.

[0051] Embodiments of the present invention provide a display substrate and a manufacturing method thereof, and a display device, which are beneficial to improving the pixel density of the display substrate.

[0052] An embodiment of the present invention provides a display substrate, such as Figure 1-Figure 8 As shown, including:

[0053] substrate;

[0054] A source electrode 11 of the thin film transistor located on the substrate, wherein the source electrode 11 extends along a first direction;

[0055] A light-transmitting semiconductor layer 12 located on a side of the source electrode 11 away from the substrate;

[0056] A gate insulating layer 13 located on a side of the semiconductor layer 12 away from the substrate;

[0057] a gate 14 of the thin film transistor located at a side of the gate insulating layer 13 away from the substrate, the gate 14 extending along a second direction, the first direction intersecting the second direction;

[0058] The semiconductor layer 12 includes a conductive first part and a non-conductive second part, the first part serves as a drain 121 of the thin film transistor, the orthographic projection of the second part on the substrate overlaps with the orthographic projection of the source 11 on the substrate, the orthographic projection of the second part on the substrate is located within the orthographic projection of the gate 14 on the substrate, and the orthographic projection of the first part on the substrate does not overlap with the orthographic projection of the gate 14 on the substrate.

[0059] In this embodiment, the non-conductorized second portion of the semiconductor layer 12 is used as the active layer of the thin film transistor, and the orthographic projection of the second portion on the substrate is located within the orthographic projection of the gate electrode 14 on the substrate, so that the active layer of the thin film transistor is hidden in the area where the gate electrode 14 is located, does not occupy the area of ​​the pixel area, does not need to reduce the area of ​​the active layer, avoids the short channel effect, and can reduce the requirements for manufacturing equipment and manufacturing processes; in addition, the conductorized first portion of the semiconductor layer 12 is used as the drain electrode 121 of the thin film transistor, which can reduce the area occupied by the opaque portion of the thin film transistor, which is beneficial to improving the pixel density of the display substrate.

[0060] In this embodiment, a source electrode 11 extending along a first direction is formed on a substrate, and the source electrode 11 may use a conductive layer having a high work function characteristic, such as a conductive material having a work function>4.7eV, including ITO, TiNx, Mo, Cu, Au, Pt, Pd, etc., so that the electron barrier between the source electrode 11 and the semiconductor layer 12 of the thin film transistor can be increased. The source electrode 11 may also include a functional layer for improving the work function, and the functional layer may include MoO3, PEDOT:PSS, etc. The conductive layer may also be subjected to SAM (Self-Assembled Monolayers) treatment to improve the work function of the conductive layer, so that the electron barrier between the source electrode 11 and the semiconductor layer 12 of the thin film transistor can be increased. In this embodiment, the display substrate also includes a data line. In order to simplify the manufacturing process and structure of the display substrate, the data line may be an integrated structure with the source electrode 11.

[0061] The display substrate of this embodiment includes a semiconductor layer 12 located on a side of the source electrode 11 away from the substrate. The semiconductor layer 12 may be made of a light-transmitting semiconductor material, such as a metal oxide semiconductor IGZO. Figure 3 As shown, the semiconductor layer 12 includes a portion covering the pixel region and a portion located above the source electrode 11 .

[0062] The display substrate of this embodiment further includes a gate insulating layer 13 and a gate electrode 14 located on the side of the semiconductor layer 12 away from the substrate. The gate insulating layer 13 and the gate electrode 14 can be deposited on the substrate with a thickness of The gate insulating layer 13 can be made of oxide, nitride or oxynitride, and the corresponding reaction gas is SiH4, NH3, N2 or SiH2Cl2, NH3, N2. The gate 14 can be made of metals such as Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, W, and alloys of these metals, such as Figure 5As shown, the gate 14 extends along the second direction, the second direction intersects the first direction, and in some embodiments, the second direction may be perpendicular to the first direction. In this embodiment, the display substrate further includes a gate line, and in order to simplify the manufacturing process and structure of the display substrate, the gate line may be an integrated structure with the gate 14.

[0063] In this embodiment, the gate line and the data line define a pixel area. The semiconductor layer 12 includes a second part covered by the gate line and a first part not covered by the gate line. The first part of the semiconductor layer 12 is a conductorized part, and the first part serves as the drain 121 of the thin film transistor. The orthographic projection of the first part on the substrate does not overlap with the orthographic projection of the source 11 on the substrate. Since the semiconductor layer 12 is made of a light-transmitting material, the drain 121 will not block the light. Therefore, the first part can be located in the pixel area and can cover the entire area of ​​the pixel area or a part of the area of ​​the pixel area. In this embodiment, the drain 121 of the thin film transistor does not need to be manufactured by a special patterning process, which can simplify the manufacturing process of the display substrate. The second part of the semiconductor layer 12 is a non-conductorized part, and serves as the active layer of the thin film transistor. The orthographic projection of the second part on the substrate is located within the orthographic projection of the gate 14 on the substrate. In this way, the active layer of the thin film transistor is hidden in the area where the gate 14 is located, and does not occupy the area of ​​the pixel area. Therefore, there is no need to reduce the size of the active layer, which can avoid the short channel effect of the thin film transistor and reduce the requirements for manufacturing equipment and manufacturing process. Through the design of this embodiment, the area occupied by the opaque part of the thin film transistor can be reduced, which is beneficial to improving the pixel density of the display substrate.

[0064] In this embodiment, the channel length of the thin film transistor is determined by the thickness of the semiconductor layer 12. In order to avoid the short channel effect of the thin film transistor, the thickness of the semiconductor layer 12 can be 20-80 nm.

[0065] An embodiment of the present invention further provides a display device, comprising the display substrate as described above. The display device of this embodiment may be a liquid crystal display device or an OLED display device.

[0066] The display device includes but is not limited to: a radio frequency unit, a network module, an audio output unit, an input unit, a sensor, a display unit, a user input unit, an interface unit, a memory, a processor, and a power supply. Those skilled in the art will appreciate that the structure of the above-mentioned display device does not constitute a limitation on the display device, and the display device may include more or less of the above-mentioned components, or a combination of certain components, or different component arrangements. In an embodiment of the present invention, the display device includes but is not limited to a display, a mobile phone, a tablet computer, a television, a wearable electronic device, a navigation display device, and the like.

[0067] The display device may be any product or component with a display function, such as a liquid crystal television, a liquid crystal display, a digital photo frame, a mobile phone, a tablet computer, etc., wherein the display device further includes a flexible circuit board, a printed circuit board and a backplane.

[0068] The embodiment of the present invention also provides a method for manufacturing a display substrate, such as Figure 1-Figure 8 As shown, including:

[0069] providing a substrate;

[0070] forming a source electrode 11 of a thin film transistor on the substrate, wherein the source electrode 11 extends along a first direction;

[0071] A light-transmitting semiconductor layer 12 is formed on a side of the source electrode 11 away from the substrate;

[0072] forming a gate insulating layer 13 on a side of the semiconductor layer 12 away from the substrate;

[0073] A gate 14 of a thin film transistor is formed on a side of the gate insulating layer 13 away from the substrate, and the gate 14 extends along a second direction, and the first direction intersects the second direction;

[0074] The semiconductor layer 12 is conductorized using the gate electrode 14 as a mask to form a first conductorized part and a second non-conductorized part, wherein the first part serves as a drain electrode 121 of the thin film transistor, an orthographic projection of the second part on the substrate overlaps with an orthographic projection of the source electrode 11 on the substrate, an orthographic projection of the second part on the substrate is located within an orthographic projection of the gate electrode 14 on the substrate, and an orthographic projection of the first part on the substrate does not overlap with an orthographic projection of the gate electrode 14 on the substrate.

[0075] In this embodiment, the non-conductorized second portion of the semiconductor layer 12 is used as the active layer of the thin film transistor, and the orthographic projection of the second portion on the substrate is located within the orthographic projection of the gate electrode 14 on the substrate, so that the active layer of the thin film transistor is hidden in the area where the gate electrode 14 is located, does not occupy the area of ​​the pixel area, does not need to reduce the area of ​​the active layer, avoids the short channel effect, and can reduce the requirements for manufacturing equipment and manufacturing processes; in addition, the conductorized first portion of the semiconductor layer 12 is used as the drain electrode 121 of the thin film transistor, which can reduce the area occupied by the opaque portion of the thin film transistor, which is beneficial to improving the pixel density of the display substrate.

[0076] In some embodiments, such as Figure 1-Figure 8 As shown, the method for manufacturing the display substrate includes the following steps:

[0077] Step 1: Figure 1 and Figure 2As shown, a substrate is provided, a buffer layer 10 is formed on the substrate, and a plurality of source electrodes 11 of thin film transistors are formed on the buffer layer 10, and the source electrodes 11 extend along a first direction;

[0078] In this embodiment, the substrate is a light-transmitting substrate, and the substrate may be a glass substrate or a quartz substrate with a thickness of 50-1000 microns.

[0079] The buffer layer 10 may be made of oxide, nitride or oxynitride, and the corresponding reaction gas is SiH4, NH3, N2 or SiH2Cl2, NH3, N2.

[0080] The source electrode 11 may be made of a conductive layer with high work function characteristics, such as a conductive layer made of a conductive material with a work function > 4.7 eV, including ITO, TiNx, Mo, Cu, Au, Pt, Pd, etc., which can increase the electron barrier between the source electrode 11 of the thin film transistor and the semiconductor layer 12. The source electrode 11 may also include a functional layer for improving the work function, including MoO3, PEDOT:PSS, etc., and the conductive layer may be subjected to SAM treatment to improve the work function of the conductive layer, which can increase the electron barrier between the source electrode 11 of the thin film transistor and the semiconductor layer 12.

[0081] In some embodiments, forming the source 11 includes: forming a stacked conductive layer and a functional layer, wherein the conductive layer is made of a conductive material having a work function greater than >4.7 eV, and the functional layer is used to increase the work function of the conductive layer.

[0082] In this embodiment, the display substrate further includes a data line. In order to simplify the manufacturing process and structure of the display substrate, the data line can be integrated with the source electrode 11 .

[0083] Step 2: Figure 3 and Figure 4 As shown, a semiconductor layer 12 of a thin film transistor is formed;

[0084] Specifically, a semiconductor layer 12 covering the pixel region and located on a side of the source electrode 11 away from the substrate may be formed.

[0085] The semiconductor layer 12 may be made of a light-transmitting semiconductor material, such as a metal oxide semiconductor IGZO. Figure 3 As shown, the semiconductor layer 12 includes a portion covering the pixel region and a portion located above the source electrode 11 .

[0086] Step 3: Figure 5 and Figure 6 As shown, a gate insulating layer 13 and a gate electrode 14 of a thin film transistor are formed;

[0087] Specifically, a plasma enhanced chemical vapor deposition (PECVD) method can be used to deposit a layer with a thickness of The gate insulating layer 13 may be made of oxide, nitride or oxynitride, and the corresponding reaction gas is SiH4, NH3, N2 or SiH2Cl2, NH3, N2.

[0088] A layer with a thickness of about 100 nm can be formed on the substrate by sputtering or thermal evaporation. The gate metal layer may be made of Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, W and other metals and alloys of these metals. The gate metal layer may be a single-layer structure or a multi-layer structure, and the multi-layer structure may be Cu\Mo, Ti\Cu\Ti, Mo\Al\Mo and the like. A photoresist is coated on the gate metal layer, and after the photoresist is exposed and developed, a pattern of the photoresist is formed. The gate metal layer is etched using the pattern of the photoresist as a mask to form a pattern of the gate 14, and the gate 14 extends along the second direction.

[0089] In some embodiments, the second direction may be perpendicular to the first direction. In this embodiment, the display substrate further includes a gate line. In order to simplify the manufacturing process and structure of the display substrate, the gate line may be an integrated structure with the gate electrode 14 .

[0090] Step 4: Figure 7 and Figure 8 As shown, the semiconductor layer 12 is conductively connected using the gate electrode 14 as a mask to form a conductive first portion and a non-conductive second portion.

[0091] In this embodiment, the gate line and the data line define a pixel area. The semiconductor layer 12 includes a second part covered by the gate line and a first part not covered by the gate line. The first part of the semiconductor layer 12 is a conductorized part, and the first part serves as the drain 121 of the thin film transistor. The orthographic projection of the first part on the substrate does not overlap with the orthographic projection of the source 11 on the substrate. Since the semiconductor layer 12 is made of a light-transmitting material, the drain 121 will not block the light. Therefore, the first part can be located in the pixel area and can cover the entire area of ​​the pixel area or a part of the area of ​​the pixel area. In this embodiment, the drain 121 of the thin film transistor does not need to be manufactured by a special patterning process, which can simplify the manufacturing process of the display substrate. The second part of the semiconductor layer 12 is a non-conductorized part, and serves as the active layer of the thin film transistor. The orthographic projection of the second part on the substrate is located within the orthographic projection of the gate 14 on the substrate. In this way, the active layer of the thin film transistor is hidden in the area where the gate 14 is located, and does not occupy the area of ​​the pixel area. Therefore, there is no need to reduce the size of the active layer, which can avoid the short channel effect of the thin film transistor and reduce the requirements for manufacturing equipment and manufacturing process. Through the design of this embodiment, the area occupied by the opaque part of the thin film transistor can be reduced, which is beneficial to improving the pixel density of the display substrate.

[0092] In the various method embodiments of the present invention, the serial numbers of the steps cannot be used to limit the sequence of the steps. For ordinary technicians in this field, without paying creative work, changes to the sequence of the steps are also within the protection scope of the present invention.

[0093] It should be noted that each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the embodiments, since they are basically similar to the product embodiments, the description is relatively simple, and the relevant parts can be referred to the partial description of the product embodiments.

[0094] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0095] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” or “under” another element, it can be “directly on” or “under” the other element or intervening elements may be present.

[0096] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in a suitable manner in any one or more embodiments or examples.

[0097] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art who is familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A display substrate, characterized in that: include: substrate; A source electrode of the thin film transistor located on the substrate, the source electrode extending along a first direction; a light-transmitting semiconductor layer located on a side of the source electrode away from the substrate; a gate insulating layer located on a side of the semiconductor layer away from the substrate; a gate of the thin film transistor located on a side of the gate insulating layer away from the substrate, the gate extending along a second direction, the first direction intersecting the second direction; The semiconductor layer includes a conductive first part and a non-conductive second part, the first part serves as a drain of the thin film transistor, the orthographic projection of the second part on the substrate overlaps with the orthographic projection of the source on the substrate, the orthographic projection of the second part on the substrate is located within the orthographic projection of the gate on the substrate, and the orthographic projection of the first part on the substrate does not overlap with the orthographic projection of the gate on the substrate.

2. The display substrate according to claim 1, characterized in that: The display substrate further comprises: A data line, wherein the data line and the source electrode are integrally structured; A gate line is an integrated structure with the gate.

3. The display substrate according to claim 2, characterized in that: The data line and the gate line define a pixel area, the first portion covers the pixel area, and an orthographic projection of the first portion on the substrate does not overlap with an orthographic projection of the source electrode on the substrate.

4. The display substrate according to claim 1, characterized in that: The source comprises: A conductive layer and a functional layer are stacked, wherein the conductive layer is made of a conductive material with a work function greater than >4.7 eV, and the functional layer is used to improve the work function of the conductive layer.

5. The display substrate according to claim 1, characterized in that: The semiconductor layer is made of metal oxide semiconductor.

6. The display substrate according to claim 1, characterized in that: The thickness of the semiconductor layer is 20-80 nm.

7. A display device, characterized in that: The invention comprises a display substrate as claimed in any one of claims 1 to 6.

8. A method for manufacturing a display substrate, characterized in that: include: providing a substrate; forming a source electrode of a thin film transistor on the substrate, wherein the source electrode extends along a first direction; forming a light-transmitting semiconductor layer on a side of the source electrode away from the substrate; forming a gate insulating layer on a side of the semiconductor layer away from the substrate; forming a gate of a thin film transistor on a side of the gate insulating layer away from the substrate, the gate extending along a second direction, and the first direction intersects the second direction; The semiconductor layer is conductorized using the gate as a mask to form a first conductorized part and a second non-conductorized part, the first part serves as a drain of the thin film transistor, the orthographic projection of the second part on the substrate overlaps with the orthographic projection of the source on the substrate, the orthographic projection of the second part on the substrate is located within the orthographic projection of the gate on the substrate, and the orthographic projection of the first part on the substrate does not overlap with the orthographic projection of the gate on the substrate.

9. The method for manufacturing a display substrate according to claim 8, characterized in that: The data lines and gate lines of the display substrate define a pixel area, and forming the semiconductor layer includes: The semiconductor layer covering the pixel region and located on a side of the source electrode away from the substrate is formed.

10. The method for manufacturing a display substrate according to claim 8, characterized in that: Forming the source includes: A conductive layer and a functional layer are stacked to form a conductive layer, wherein the conductive layer is made of a conductive material having a work function greater than 4.7 eV, and the functional layer is used to improve the work function of the conductive layer.

Images