Dual-wavelength laser energy information simultaneous transmission battery and preparation method thereof
By bonding 808nm and 1064nm laser cells in laser energy information simultaneous battery and filling the gate line gap with high refractive index organic medium, the problems of energy loss and integration difficulty in the prior art are solved, and high integration and low integration are achieved Power consumption of energy and information transmission.
Patent Information
- Application Number
- CN202411294541.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-14
- Publication Date
- 2025-02-07
AI Technical Summary
The existing laser energy information simultaneous transmission receiver requires an additional reverse bias power supply, resulting in increased energy loss and integration difficulty. At the same time, the signal noise floor of the photodetector becomes larger, making it difficult to meet the low power consumption of the micro-energy information simultaneous transmission system and Integrated application requirements.
A dual-wavelength laser energy information simultaneous battery is used to bond the 808nm laser battery and 1064nm laser battery on the glass substrate to form a three-layer structure, and the gate line gap is filled with high refractive index organic medium to reduce laser reflection loss, and pass through the annular groove. Channel and signal terminal electrodes are optimized for signal reception.
It improves the integration of the energy information simultaneous transmission and reception end, reduces energy loss and integration difficulty, enhances the sensitivity and stability of signal reception, and realizes wireless transmission of energy and information.
Smart Images
Figure CN119403288A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of laser batteries, and in particular relates to a dual-wavelength laser energy information simultaneous transmission battery and a preparation method thereof. Background Art
[0002] At present, the traditional laser energy information simultaneous transmission receiving end function is mainly realized by integrating the photodetector and the laser battery on the same substrate through hybrid integration, so as to realize the superposition of simple energy transmission and signal transmission. The disadvantage of this technical solution is that the photodetector itself requires additional reverse bias to improve the transport capacity of photogenerated carriers and the photogenerated current. Based on the working principle of the photodetector, providing a reverse bias can form a high electric field depletion region, improve quantum efficiency, and achieve avalanche multiplication gain, significantly improving the performance and sensitivity of the photodetector. Therefore, the laser energy information simultaneous transmission receiving end requires an additional reverse bias power supply to power the photodetector, which increases the energy loss and integration difficulty of the receiving end. At the same time, due to the large optical power density of the energy transmission laser and the transmission after the beam shaping system, it is easy to generate diffracted light with a strong energy density outside the target area, which makes the photodetector signal noise floor larger or even submerged.
[0003] For the low power consumption and integrated application of micro energy information transmission system, the technical solution of hybrid integrated packaging is far from meeting the requirements of miniaturization and integration. Since multiple devices are packaged together in a hybrid integrated manner, the device itself is easily damaged during heating, welding and fixing during the packaging process, resulting in device reliability problems. In addition, the photodetector requires external power bias to achieve normal operation, which increases the energy consumption of the receiving end component. In addition, a direct metal bonding process is used to metal bond multiple sub-cell grid lines, and the sub-cells are integrated together through bonding technology. After that, the preparation of the multiplexed multi-junction photovoltaic cell is completed through device processes such as substrate removal and groove lead-out electrodes. This technical solution has high process difficulty, and there is no dielectric filling between the grid line electrodes, which is easy to cause beam reflection loss. Summary of the invention
[0004] In view of the problems existing in the prior art, the present invention provides a dual-wavelength laser energy information simultaneous transmission battery and a preparation method thereof, so as to improve the integration of the energy information simultaneous transmission receiving end.
[0005] The present invention is implemented as follows: a dual-wavelength laser energy information simultaneous transmission battery includes an 808nm laser battery and a 1064nm laser battery. The 808nm laser battery and the 1064nm laser battery are bonded together through a glass substrate to form a three-layer structure. The grid lines of the upper 808nm laser battery are aligned with the grid lines of the lower 1064nm laser battery.
[0006] The glass substrate has a laser transmittance of ≥95% in the 1064nm and 808nm bands, and a thickness of 0.5mm-2mm.
[0007] The 808nm laser cell uses MOCVD equipment to grow an epitaxial structure, and evaporates 5μm thick Au / Ge / Ag / Au alloy metal on the front of the cell epitaxial wafer to form a grid line located on the front of the cell epitaxial wafer and a first electrode located at the edge of the cell epitaxial wafer; the 1064nm laser cell uses MOCVD equipment to grow an epitaxial structure, and evaporates 5μm thick Au / Ge / Ag / Au alloy metal on the front of the cell epitaxial wafer to form a grid line located on the front of the cell epitaxial wafer and an energy end electrode located at the edge of the cell epitaxial wafer, and the glass substrate is bonded between the front sides of the two cell epitaxial wafers.
[0008] The substrate of the reverse-grown multi-junction 808nm laser cell epitaxial wafer is removed using a wet etching process, and the 808nm laser cell after etching the substrate is evaporated with the gate lines and first electrodes of the same size as the gate lines and first electrodes on the front side of the cell epitaxial wafer to ensure that the gate line patterns on the front and back sides of the 808nm laser cell are aligned.
[0009] The width of the gate lines on the 808nm laser battery and the 1064nm laser battery is 5μm-20μm, the gate line duty cycle is 0.5%-10%, and a gate line-free area with a maximum width of 1mm is provided in the middle. An annular channel is etched in the gate line-free area of the 1064nm laser battery. The middle area of the annular channel is a signal receiving area for receiving signal laser. A signal terminal electrode is installed in the signal receiving area, and the signal terminal electrode is led to the edge of the 1064nm laser battery.
[0010] The method for preparing the dual-wavelength laser energy information simultaneous transmission battery comprises the following steps:
[0011] (1) Using a reverse-grown multi-junction 808nm laser cell epitaxial wafer, evaporating a 5μm thick Au / Ge / Ag / Au alloy metal electrode and a gate line on the front side of the cell epitaxial wafer, the gate line width is 5μm-20μm, the gate line duty ratio is 0.5%-10%, and a gate line-free area with a maximum width of 1mm is provided in the middle;
[0012] (2) preparing a glass substrate with a thickness of 0.5 mm to 2 mm and a laser transmittance of ≥95% in the 1064 nm and 808 nm bands, bonding the front surface of the battery prepared in step (1) to the glass substrate through a high-refractive index organic medium, and curing and fixing it, and the high-refractive index organic medium fills the gaps between the grid lines to ensure that the transmitted laser is not reflected by the air interface to cause energy loss;
[0013] (3) removing the substrate of the reverse-grown multi-junction 808nm laser cell epitaxial wafer by a wet etching process, and evaporating the 808nm laser cell substrate after the etching of the substrate with metal grid lines and electrodes having the same grid line width and proportion as that in step (1), to ensure that the grid line patterns on the front and back sides of the 808nm laser cell are aligned;
[0014] (4) cutting the structure in which the 808 nm laser cell prepared in step (3) is bonded to the glass substrate into units;
[0015] (5) The light receiving area of the 1064nm laser cell is made into a device with the same size and grid line ratio as the light receiving area of the 808nm laser cell by using step (1), and a ring-shaped groove is etched in the middle area by using an etching process. The middle area of the ring is used for signal laser reception. The energy end electrode part is slightly larger than the first electrode area of the 808nm laser cell to facilitate the packaging of the lead. After being split into single cells, the gate line electrode surface of the single 1064nm laser cell is aligned and bonded to the other side of the glass substrate, and the method of step (2) is used for bonding and fixing.
[0016] The high refractive index organic medium is epoxy resin or glycerin, and has a transmittance of ≥95% to lasers in the wavelength bands of 1064nm and 808nm.
[0017] The epitaxial layer of the 808nm laser cell grown in reverse direction increases in thickness of the subcells in the direction of the substrate in sequence, following the Lambert-Beer law.
[0018] The advantages and technical effects of the present invention are as follows: the present invention can improve the integration of the energy information simultaneous transmission receiving end, meet the miniaturization and integration requirements of the energy information simultaneous transmission battery, optimize the manufacturing process of the energy information simultaneous transmission battery, improve the reliability and performance stability of the battery, and can simultaneously realize the wireless transmission of energy and information, and can solve the power transmission and information transmission in special and complex scenarios. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 It is a schematic diagram of the structure of the dual-wavelength laser energy information simultaneous transmission battery of the present invention;
[0020] Figure 2 It is a plan view of an 808nm laser battery of the dual-wavelength laser energy information simultaneous transmission battery of the present invention;
[0021] Figure 3 It is a plan view of a 1064nm laser battery of the dual-wavelength laser energy information simultaneous transmission battery of the present invention;
[0022] Figure 4 It is a schematic diagram of the use status of the dual-wavelength laser energy information simultaneous transmission battery of the present invention. DETAILED DESCRIPTION
[0023] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings. It should be understood that the specific implementation methods described herein are only used to explain the present invention and are not used to limit the present invention.
[0024] In the description of the present invention, it should be noted that the orientations or positional relationships indicated by terms such as “upper”, “middle”, “lower”, “inside”, “outside”, and “both sides” are based on the orientations or positional relationships shown in the accompanying drawings, and are only simplified descriptions for the convenience of describing the present invention, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.
[0025] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "provided with", "connected", etc. should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0026] like Figure 1-3 As shown, the dual-wavelength laser energy information simultaneous transmission battery of the present invention includes an 808nm laser battery and a 1064nm laser battery, and is characterized in that the 808nm laser battery 1 and the 1064nm laser battery 2 are bonded together through a glass substrate 3 to form a three-layer structure, and the grid lines of the upper 808nm laser battery 1 and the lower 1064nm laser battery 2 are aligned.
[0027] The glass substrate 3 has a laser transmittance of ≥95% in the 1064nm and 808nm bands, and a thickness of 0.5mm-2mm.
[0028] The 808nm laser cell 1 uses MOCVD equipment to grow an epitaxial structure, and evaporates 5μm thick Au / Ge / Ag / Au alloy metal on the front of the cell epitaxial wafer to form a gate line 10 located on the front of the cell epitaxial wafer and a first electrode 8 located at the edge of the cell epitaxial wafer; the 1064nm laser cell 2 uses MOCVD equipment to grow an epitaxial structure, and evaporates 5μm thick Au / Ge / Ag / Au alloy metal on the front of the cell epitaxial wafer to form a gate line 11 located on the front of the cell epitaxial wafer and an energy terminal electrode 9 located at the edge of the cell epitaxial wafer, and the glass substrate 3 is bonded between the front sides of the two cell epitaxial wafers.
[0029] The substrate of the reverse-grown multi-junction 808nm laser cell 1 epitaxial wafer is removed using a wet etching process, and the 808nm laser cell after the etching substrate is evaporated with a gate line 10 and a first electrode 8 of the same size as the gate line 10 and the first electrode 8 on the front side of the cell epitaxial wafer to ensure that the gate line patterns on the front and back sides of the 808nm laser cell are aligned.
[0030] The gate line width on the 808nm laser battery 1 and the 1064nm laser battery 2 is 5μm-20μm, the gate line duty cycle is 0.5%-10%, and a gate line-free area with a maximum width of 1mm is provided in the middle. An annular channel 4 is etched in the gate line-free area of the 1064nm laser battery 2. The middle area of the annular channel 4 is a signal receiving area 13 for receiving signal laser. A signal terminal electrode 5 is installed in the signal receiving area 13, and the signal terminal electrode 5 is led to the edge of the 1064nm laser battery 2.
[0031] The method for preparing the dual-wavelength laser energy information simultaneous transmission battery comprises the following steps:
[0032] (1) Using a reverse-grown multi-junction 808nm laser cell epitaxial wafer, evaporating a 5μm thick Au / Ge / Ag / Au alloy metal electrode and a gate line on the front side of the cell epitaxial wafer, the gate line width is 5μm-20μm, the gate line duty ratio is 0.5%-10%, and a gate line-free area with a maximum width of 1mm is provided in the middle;
[0033] (2) preparing a glass substrate with a thickness of 0.5 mm to 2 mm and a laser transmittance of ≥95% in the 1064 nm and 808 nm bands, bonding the front surface of the battery prepared in step (1) to the glass substrate through a high-refractive index organic medium, and curing and fixing it, and the high-refractive index organic medium fills the gaps between the grid lines to ensure that the transmitted laser is not reflected by the air interface to cause energy loss;
[0034] (3) removing the substrate of the reverse-grown multi-junction 808nm laser cell epitaxial wafer by a wet etching process, and evaporating the 808nm laser cell substrate after the etching of the substrate with metal grid lines and electrodes having the same grid line width and proportion as that in step (1), to ensure that the grid line patterns on the front and back sides of the 808nm laser cell are aligned;
[0035] (4) cutting the structure in which the 808 nm laser cell prepared in step (3) is bonded to the glass substrate into units;
[0036] (5) The light receiving area of the 1064nm laser cell is made into a device with the same size and grid line ratio as the light receiving area of the 808nm laser cell by using step (1), and a ring-shaped groove is etched in the middle area by using an etching process. The middle area of the ring is used for signal laser reception. The energy end electrode part is slightly larger than the first electrode area of the 808nm laser cell to facilitate the packaging of the lead. After being split into single cells, the gate line electrode surface of the single 1064nm laser cell is aligned and bonded to the other side of the glass substrate, and the method of step (2) is used for bonding and fixing.
[0037] The high refractive index organic medium is epoxy resin or glycerin, and has a transmittance of ≥95% to lasers in the wavelength bands of 1064nm and 808nm.
[0038] The epitaxial layer of the 808nm laser cell grown in reverse direction increases in thickness of the subcells in the direction of the substrate in sequence, following the Lambert-Beer law.
[0039] The present invention comprises two laser cells of different wavelength bands (the central wavelengths of the laser receiving spectrum are quite different) vertically bonded at the two ends of a wide spectrum and high transmittance glass, wherein the laser cell part with low photoelectric conversion efficiency in the long-wave band is mainly used for signal reception, and the laser cell part with high photoelectric conversion efficiency in the short-wave band is mainly used for energy reception; the laser cell structure with low photoelectric conversion efficiency in the long-wave band is placed at the bottom layer of the device, and the laser cell structure with high photoelectric conversion efficiency in the short-wave band is placed at the top layer of the device, such as Figure 1 As shown. The wireless energy information simultaneous transmission laser cell structure bonds the 1064nm laser cell and the 808nm laser cell together through a glass substrate to form a vertical structure. The 1064nm laser cell structure is placed below the 808nm laser cell, with the glass substrate in the middle as a support structure, and the upper and lower grid lines are aligned. MOCVD equipment is used to grow the 808nm laser cell epitaxial structure and the 1064nm laser cell epitaxial structure respectively, where an etch stop layer is designed above the substrate layer of the 808nm laser cell epitaxial structure.
[0040] The specific production process is as follows:
[0041] (1) Use a reverse-grown multi-junction 808nm laser cell epitaxial wafer. The reverse-grown epitaxial layer is characterized by the thickness of the sub-cell increasing in the direction of the substrate, following the Lambert-Beer law. On the front of the cell epitaxial wafer, a 5μm thick Au / Ge / Ag / Au alloy metal electrode and gate line are evaporated. The gate line width is 5μm-20μm, and the gate line duty ratio is 0.5%-10%. There is no gate line in the middle width of 1mm.
[0042] (2) Prepare a glass substrate with high transmittance (laser transmittance at 1064nm and 808nm bands ≥ 95%) and a thickness of 0.5mm-2mm. Bond the front side of the battery prepared in step (1) to the glass substrate through an epoxy resin or glycerol or other high refractive index organic medium and solidify and fix it. The high refractive index organic medium fills the gaps between the grid lines to ensure that the transmitted laser is not reflected by the air interface and causes energy loss. The metal pattern of a single unit is as follows: Figure 2 As shown, the metal electrode and gate line are used for back-side current transmission of 808nm laser cells.
[0043] (3) The substrate of the reverse-grown multi-junction 808nm laser cell epitaxial wafer is removed using a wet etching process, generally using a mixture of citric acid solution and hydrogen peroxide.
[0044] (4) The 808nm laser cell after etching the substrate is evaporated with metal grid lines and electrodes having the same grid line width and ratio as those in step (1) to ensure that the grid line patterns on the front and back sides of the 808nm laser cell are aligned. Alignment can minimize the shading loss of the grid lines.
[0045] (5) The structure in which the 808nm laser cell is bonded to the glass substrate is cut into units.
[0046] (6) The light receiving area of the 1064nm laser cell is made into a device with the same size and grid line ratio as the light receiving area of the 808nm laser cell. The middle area is etched into a ring channel using an etching process. The middle area of the ring is used for signal laser reception. The energy end electrode part is slightly larger than the electrode area of the 808nm laser cell to facilitate the packaging of the lead wire. After being split into single cells, the single 1064nm laser cell grid line electrode surface is aligned and bonded to the other side of the glass substrate. 14 is the energy receiving area.
[0047] (7) Figure 4 As shown, the substrate surface of the 1064nm laser battery is bonded to the ceramic substrate 7, and the energy end electrode and the signal end electrode of the 1064nm laser battery and the first electrode of the 808nm laser battery are respectively led out using the lead 15 bonding process, and the energy end electrode and the signal end electrode are respectively connected to the corresponding electrode areas on the ceramic substrate, including the energy end area and the signal end area.
[0048] (8) The output power is tested by combining the 1064nm laser beam and the 808nm laser beam and irradiating the 808nm laser cell grid line surface of the battery.
[0049] (7) By modulating one of the combined laser beams, the modulation signal is loaded onto the laser beam, and the laser pulse coding signal is received by the corresponding structure, thereby realizing the simultaneous transmission of laser energy and information.
[0050] The test results of the embodiment are as follows:
[0051] By combining 1064nm and 808nm laser beams and testing the output power of the two lasers to be 500mW and 480mW respectively, the IV curve was tested by the electronic source meter, the open circuit voltage of the 808nm energy end was 2.05V, the fill factor was 84.08%, and the output power was 216.6mW. The open circuit voltage of the 1064nm energy end was 0.75V, the fill factor was 66.03%, and the output power was 187.67mW.
[0052] The 1064nm laser is triggered by a signal generator to generate a pulse signal, the laser signal is received by the laser battery connected to the signal processing circuit, and the signal graph received by the laser battery is received and displayed using a digital oscilloscope. The pulse signal is received relatively completely at a frequency of 10KHz.
[0053] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.
Claims
1. A dual-wavelength laser energy information simultaneous transmission battery, comprising an 808nm laser battery and a 1064nm laser battery, characterized in that: The 808nm laser cell (1) and the 1064nm laser cell (2) are bonded together via a glass substrate (3) to form a three-layer structure, wherein the grid lines of the upper 808nm laser cell (1) and the grid lines of the lower 1064nm laser cell (2) are aligned.
2. The dual-wavelength laser energy information simultaneous transmission battery according to claim 1, characterized in that: The glass substrate (3) has a laser transmittance of ≥95% in the 1064nm and 808nm bands and a thickness of 0.5mm-2mm.
3. The dual-wavelength laser energy information simultaneous transmission battery according to claim 1, characterized in that: The 808nm laser cell (1) uses MOCVD equipment to grow an epitaxial structure, and 5μm thick Au / Ge / Ag / Au alloy metal is evaporated on the front of the cell epitaxial wafer to form a gate line (10) located on the front of the cell epitaxial wafer and a first electrode (8) located on the edge of the cell epitaxial wafer; the 1064nm laser cell (2) uses MOCVD equipment to grow an epitaxial structure, and 5μm thick Au / Ge / Ag / Au alloy metal is evaporated on the front of the cell epitaxial wafer to form a gate line (11) located on the front of the cell epitaxial wafer and an energy terminal electrode (9) located on the edge of the cell epitaxial wafer, and the glass substrate (3) is bonded between the fronts of the two cell epitaxial wafers.
4. The dual-wavelength laser energy information simultaneous transmission battery according to claim 3, characterized in that: The substrate of the reverse-grown multi-junction 808nm laser cell (1) epitaxial wafer is removed using a wet etching process, and the 808nm laser cell after the etching substrate is evaporated with a gate line (10) and a first electrode (8) of the same size as the gate line (10) and the first electrode (8) on the front side of the cell epitaxial wafer, so as to ensure that the gate line patterns on the front and back sides of the 808nm laser cell are aligned.
5. The dual-wavelength laser energy information simultaneous transmission battery according to claim 3, characterized in that: The grid line width on the 808nm laser cell (1) and the 1064nm laser cell (2) is 5μm-20μm, the grid line duty ratio is 0.5%-10%, and a grid line-free area with a maximum width of 1mm is provided in the middle. An annular channel (4) is etched in the grid line-free area of the 1064nm laser cell (2), and the middle area of the annular channel (4) is a signal receiving area (13) for receiving signal laser. A signal terminal electrode (5) is installed in the signal receiving area (13), and the signal terminal electrode (5) is led to the edge of the 1064nm laser cell (2).
6. The method for preparing a dual-wavelength laser energy information simultaneous transmission battery according to any one of claims 1 to 5, characterized in that: The following steps are involved: (1) Using a reverse-grown multi-junction 808nm laser cell epitaxial wafer, evaporating a 5μm thick Au / Ge / Ag / Au alloy metal electrode and a gate line on the front side of the cell epitaxial wafer, the gate line width is 5μm-20μm, the gate line duty ratio is 0.5%-10%, and a gate line-free area with a maximum width of 1mm is provided in the middle; (2) preparing a glass substrate with a thickness of 0.5 mm to 2 mm and a laser transmittance of ≥95% in the 1064 nm and 808 nm bands, bonding the front surface of the battery prepared in step (1) to the glass substrate through a high-refractive index organic medium, and curing and fixing it, and the high-refractive index organic medium fills the gaps between the grid lines to ensure that the transmitted laser is not reflected by the air interface to cause energy loss; (3) removing the substrate of the reverse-grown multi-junction 808nm laser cell epitaxial wafer by a wet etching process, and evaporating the 808nm laser cell substrate after the etching of the substrate with metal grid lines and electrodes having the same grid line width and proportion as that in step (1), to ensure that the grid line patterns on the front and back sides of the 808nm laser cell are aligned; (4) cutting the structure in which the 808 nm laser cell prepared in step (3) is bonded to the glass substrate into units; (5) The light receiving area of the 1064nm laser cell is made into a device with the same size and grid line ratio as the light receiving area of the 808nm laser cell by using step (1), and a ring-shaped groove is etched in the middle area by using an etching process. The middle area of the ring is used for signal laser reception. The energy end electrode part is slightly larger than the first electrode area of the 808nm laser cell to facilitate the packaging of the lead. After being split into single cells, the gate line electrode surface of the single 1064nm laser cell is aligned and bonded to the other side of the glass substrate, and the method of step (2) is used for bonding and fixing.
7. The method for preparing the dual-wavelength laser energy information simultaneous transmission battery according to claim 6, characterized in that: The high refractive index organic medium is epoxy resin or glycerin, and has a transmittance of ≥95% to lasers in the 1064nm and 808nm bands.
8. The method for preparing the dual-wavelength laser energy information simultaneous transmission battery according to claim 7, characterized in that: The epitaxial layer of the 808nm laser cell grown in reverse direction increases in thickness of the subcells in the direction of the substrate in sequence, following the Lambert-Beer law.