Semiconductor process equipment, cleaning method of semiconductor process equipment and related device

Abstract

The embodiment of the invention provides semiconductor process equipment. The equipment comprises a process chamber, a circulating purging device and a chamber ventilation device, the chamber ventilation device comprises an air inlet assembly and an exhaust assembly. The inflation assembly is used for introducing first purging gas into the process chamber; the gas inlet assembly is used for introducing second purging gas into the process chamber; the first purge gas is different from the second purge gas; the flow of the gas introduced into the process chamber by the gas inlet assembly in unit time is greater than the flow of the gas introduced into the process chamber by the gas inflation assembly in unit time, so that in the process of cleaning the process chamber, after the process chamber is primarily cleaned by the circulating purging device, the process chamber can be cleaned by the circulating purging device; according to the technical scheme, the second purging gas with the large flow provided by the chamber ventilation device is used for rapidly cleaning the process chamber, so that the concentration of the target gas in the process chamber is rapidly reduced to be below the safety value, and the chamber cleaning efficiency is improved under the condition that the health and safety of operators are guaranteed.

Description

Technical Field

[0001] The present specification relates to the field of semiconductor technology, specifically, to semiconductor equipment cleaning technology under the field of semiconductor technology, and more specifically, to a semiconductor process equipment, a cleaning method for semiconductor process equipment, and related devices. Background Art

[0002] The process chamber of semiconductor process equipment is an important module for implementing various process steps of wafers. In order to achieve a specific process, one or more process gases may need to be introduced into the process chamber. These process gases may be toxic, flammable or relatively active. After the process chamber completes the wafer process, in order to ensure the health and safety of the operators, the residual process gas in the process chamber needs to be cleaned before the chamber can be opened.

[0003] In some cases, when some special gases, such as highly toxic gases (such as diborane B2H, dichlorosilane DCS, phosphine PH3, germane GeH4, arsine AsH3, hydrogen selenide H2Se, etc.) are introduced into the reaction chamber, since the safe allowable concentration of these gases is very low, the current chamber cleaning equipment and cleaning methods are inefficient in cleaning the process chamber, which requires a lot of time and reduces production efficiency. Summary of the invention

[0004] The embodiments of this specification provide a semiconductor process equipment, a cleaning method for semiconductor process equipment and related devices to achieve the purpose of improving the cleaning efficiency of semiconductor process equipment and improve production efficiency.

[0005] To achieve the above technical objectives, the embodiments of this specification provide the following technical solutions:

[0006] In a first aspect, an embodiment of the present specification provides a semiconductor process equipment, comprising: a process chamber, a circulating purge device and a chamber ventilation device; wherein,

[0007] The circulating purge device includes an air charging component and an air exhaust component which are arranged at different positions of the side wall of the process chamber and communicated with the inner space of the process chamber;

[0008] The chamber ventilation device includes an air intake component and an exhaust component which are arranged at different positions of the side wall of the process chamber and communicated with the internal space of the process chamber;

[0009] The gas charging assembly is used to introduce a first purge gas into the process chamber;

[0010] The gas inlet assembly is used to introduce a second purge gas into the process chamber;

[0011] The first purge gas is different from the second purge gas;

[0012] The flow rate of gas introduced into the process chamber by the air intake component per unit time is greater than the flow rate of gas introduced into the process chamber by the gas charging component per unit time.

[0013] In a second aspect, an embodiment of the present specification provides a cleaning method for semiconductor process equipment, which is applied to any of the semiconductor process equipment described above; the cleaning method for semiconductor process equipment comprises:

[0014] Performing a first cleaning process using a circulating purge device to introduce a first purge gas into the process chamber to reduce the target gas concentration inside the chamber body to a first threshold value;

[0015] After the first cleaning process is completed, a second purge gas is introduced into the process chamber by using an air intake assembly of a chamber ventilation device, so as to exhaust the chamber body by using the second purge gas until the target gas concentration in the chamber body is less than a second threshold value, and the second threshold value is less than the first threshold value; the first purge gas is different from the second purge gas.

[0016] In a third aspect, an embodiment of the present specification further provides a computing device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the cleaning method of the semiconductor process equipment as described above when executing the computer program.

[0017] In a fourth aspect, an embodiment of the present specification further provides a computer-readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the cleaning method of the semiconductor process equipment as described above is implemented.

[0018] In a fifth aspect, an embodiment of the present specification provides a computer program product or a computer program, wherein the computer program product includes a computer program, and the computer program is stored in a computer-readable storage medium; the processor of the computer device reads the computer program from the computer-readable storage medium, and the processor implements the steps of the above-mentioned semiconductor process equipment cleaning method when executing the computer program.

[0019] It can be seen from the above technical scheme that the semiconductor process equipment provided in the embodiment of the present specification includes a process chamber, a circulating purge device and a chamber ventilation device; wherein the chamber ventilation device includes an air intake component and an exhaust component which are arranged at different positions on the side wall of the process chamber and connected to the internal space of the process chamber; the air charging component is used to introduce a first purge gas into the process chamber; the air intake component is used to introduce a second purge gas into the process chamber; the first purge gas is different from the second purge gas; the flow rate of gas introduced into the process chamber by the air intake component per unit time is greater than the flow rate of gas introduced into the process chamber by the air charging component per unit time, so that in the process of cleaning the process chamber, after the circulating purge device is used to perform preliminary cleaning of the process chamber, the second purge gas with a larger flow rate provided by the chamber ventilation device can be used to quickly clean the process chamber, so that the target gas concentration inside the chamber body is quickly reduced to below the safe value, while ensuring the health and safety of the operators, the efficiency of chamber cleaning is improved, which is conducive to improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of this specification or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this specification. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0021] Figure 1 A schematic diagram of a frame structure of a semiconductor process equipment provided in the related art;

[0022] Figure 2 A schematic diagram of the framework structure of a semiconductor process equipment provided in an embodiment of this specification;

[0023] Figure 3 A schematic diagram of the structure of the left side and front of a semiconductor process equipment provided in an embodiment of this specification;

[0024] Figure 4 A schematic diagram of the structure of the right side of a semiconductor process equipment provided in an embodiment of this specification;

[0025] Figure 5 A schematic diagram of the structure of an intake valve provided in an embodiment of this specification;

[0026] Figure 6 A schematic flow chart of a method for cleaning semiconductor process equipment provided in an embodiment of this specification;

[0027] Figure 7A schematic flow chart of another method for cleaning semiconductor process equipment provided in an embodiment of the present specification;

[0028] Figure 8 A schematic diagram of a cyclic purge process provided for an embodiment of this specification;

[0029] Fig. 9 A schematic diagram of a process of balancing the pressure inside and outside a chamber provided in an embodiment of this specification;

[0030] Fig.10 A schematic diagram of a second cleaning process provided in an embodiment of this specification;

[0031] Fig.11 A schematic diagram of a tracer gas concentration versus time curve for different cleaning methods provided in an embodiment of this specification;

[0032] Fig.12 A schematic diagram of the structure of a semiconductor process equipment provided in an embodiment of this specification;

[0033] Fig.13 A schematic diagram of the structure of a computing device provided for an embodiment of this specification. DETAILED DESCRIPTION

[0034] Unless otherwise defined, the technical terms or scientific terms used in the embodiments of this specification shall have the common meanings understood by persons with ordinary skills in the field to which this specification belongs. The words "first", "second" and similar words used in the embodiments of this specification do not indicate any order, quantity or importance, but are only used to avoid confusion of constituent elements.

[0035] Unless the context requires otherwise, throughout the specification, "plurality" means "at least two", and "including" is interpreted as an open, inclusive meaning, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "examples", "specific examples" or "some examples" are intended to indicate that a particular feature, structure, material or characteristic associated with the embodiment or example is included in at least one embodiment or example of the specification. The schematic representation of the above terms does not necessarily refer to the same embodiment or example.

[0036] The following will be combined with the drawings in the embodiments of this specification to clearly and completely describe the technical solutions in the embodiments of this specification. Obviously, the described embodiments are only part of the embodiments of this specification, not all of the embodiments. Based on the embodiments in this specification, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this specification.

[0037] Overview

[0038] When semiconductor process equipment processes wafers, different types of process gases may need to be introduced into the semiconductor process equipment. When some highly toxic gases (such as diborane B2H6, dichlorosilane DCS, phosphine PH3, germane GeH4, arsine AsH3, hydrogen selenide H2Se, etc.) are introduced into the semiconductor process equipment, the semiconductor process equipment needs to be cleaned more deeply to ensure that the concentration of these gases is lower than the safe allowable concentration, so as to prevent these toxic gases from endangering the health and safety of the operators. In order to avoid the harm of highly toxic gases to operators during the cleaning process, inert gas can be used to purge the semiconductor process equipment to reduce the concentration of process gases in the semiconductor process equipment to below the safe allowable concentration. When the safe allowable concentration of some process gases is very low, it is necessary to cycle the purge work many times, which greatly increases the cleaning time and reduces the cleaning efficiency, which is not conducive to improving production efficiency.

[0039] For example, refer to Figure 1 , Figure 1 A schematic diagram of the topological structure of a semiconductor process equipment is shown, and the semiconductor process equipment may include a process chamber (or reaction chamber), a gas charging valve 1, a slow bypass valve 2, a fast bypass valve 3, a swing valve 4, a molecular pump isolation valve 5, a molecular pump cleaning valve 6, a molecular pump 9 and a second pumping element 10. Figure 1 The reference numerals 7 and 8 in the figure represent the air inlet, based on Figure 1 The semiconductor process equipment shown can clean the process chamber by cyclic purge. Specifically, the process can include:

[0040] (1) Open the charging valve, molecular pump isolation valve and molecular pump cleaning valve to fill the reaction chamber with inert gas;

[0041] (2) When the air pressure in the chamber reaches a certain level, close the inflation valve, molecular pump isolation valve and molecular pump cleaning valve, and open the bypass slow valve to pump air;

[0042] (3) To prevent contamination of the chamber, close the slow bypass valve and open the fast bypass valve;

[0043] (4) When the inlet pipeline pressure of the second pumping element 10 reaches the tolerance range of the molecular pump, the molecular pump isolation valve and the molecular pump cleaning valve are opened;

[0044] (5) When the chamber pressure drops to a certain level, close the bypass fast valve, molecular pump isolation valve and molecular pump cleaning valve;

[0045] (6) Repeat steps (1) to (5) to complete the chamber cleaning operation.

[0046] However, due to the limitation of the inert gas flow rate and the suction volume of the first vacuum pumping element, the cleaning efficiency is low and rapid cleaning cannot be achieved. In order to solve this problem, the inventors have found that a chamber ventilation device can be added to the semiconductor process equipment. The chamber ventilation device can include an intake assembly and an exhaust assembly arranged at different positions of the process chamber side wall and connected to the internal space of the process chamber. The intake assembly can include an intake valve, and the exhaust assembly can include an exhaust valve and an exhaust pipe; the intake valve and the exhaust valve can be respectively arranged at different positions of the chamber body; one end of the exhaust pipe is connected to the exhaust valve, and the other end is connected to the first pumping element (such as the exhaust equipment of the factory).

[0047] When cleaning the above-mentioned semiconductor process equipment, the target gas concentration inside the chamber body can be first reduced to below the first threshold value by using the above-mentioned cyclic purge and other processes. Then, when the target gas concentration inside the chamber body is lower than the first threshold value and the chamber pressure reaches the target pressure, the exhaust valve can be opened to cooperate with the first vacuum element to make the chamber pressure inside the chamber body lower than the target pressure, so as to avoid the situation where the target gas inside the chamber body overflows into the first gas environment (for example, the atmospheric environment) when the intake valve is opened; after the exhaust valve is opened, the intake valve can be opened to connect the chamber body with the first gas environment, and the chamber body can be exhausted by using a large flow of the second purge gas (for example, air), so as to quickly reduce the target gas concentration inside the chamber body to below the safe value, thereby improving the efficiency of chamber cleaning while ensuring the health and safety of the operators, which is conducive to improving production efficiency.

[0048] Based on the above concept, an embodiment of the present specification provides a semiconductor process equipment and a chamber cleaning method. The semiconductor process equipment and the chamber cleaning method provided in the embodiment of the present specification will be exemplarily described below in conjunction with the accompanying drawings.

[0049] Exemplary Chambers

[0050] This specification provides a semiconductor process equipment, referring to Figure 2 , and combined with reference Figure 3 to Figure 5 , the semiconductor process equipment includes a process chamber, a circulating purge device and a chamber ventilation device; wherein:

[0051] The circulating purge device includes an air charging component and an air exhaust component which are arranged at different positions of the side wall of the process chamber and communicated with the inner space of the process chamber;

[0052] The chamber ventilation device includes an air intake component and an exhaust component which are arranged at different positions of the side wall of the process chamber and communicated with the internal space of the process chamber;

[0053] The gas charging assembly is used to introduce a first purge gas into the process chamber;

[0054] The gas inlet assembly is used to introduce a second purge gas into the process chamber;

[0055] The first purge gas is different from the second purge gas;

[0056] The flow rate of gas introduced into the process chamber by the air intake component per unit time is greater than the flow rate of gas introduced into the process chamber by the gas charging component per unit time.

[0057] During the cleaning process of the process chamber, after the circulating purge device is used to perform preliminary cleaning of the process chamber, the second purge gas with a larger flow rate provided by the chamber ventilation device can be used to quickly purge the process chamber, so that the target gas concentration inside the chamber body is quickly reduced to below the safe value. While ensuring the health and safety of the operators, the efficiency of chamber cleaning is improved, which is conducive to improving production efficiency.

[0058] In an optional embodiment, the process chamber includes a chamber body 11, referring to Figure 2 In this embodiment, the chamber body 11 may refer to a structure for forming a closed space for wafers to be processed. During the process, a vacuum environment may be formed inside the chamber body 11 to ensure the process effect. After the process is completed, the chamber body 11 may be opened to take out the wafers that have completed the process.

[0059] In some embodiments, the top cover 14 of the chamber body 11 can be called a covering structure, which has the function of covering the top of the chamber and forming a closed space together with the interior of the chamber body 11 .

[0060] In some embodiments, the chamber body 11 is a cubic structure having four side walls, and the four side walls are opposite to each other. The top cover 14 is a quadrilateral and covers the top of the chamber.

[0061] In an optional embodiment, still referring to Figure 2 to Figure 5 The inflation component includes: an inflation valve 1; the exhaust component includes: an exhaust valve and a second exhaust element 10; wherein,

[0062] The inflation valve 1 and the exhaust valve are respectively arranged at different positions of the side wall of the process chamber and are connected to the inner space of the process chamber;

[0063] In some embodiments, the inflation valve 1 is disposed in the inflation pipeline, and can control the on-off of the inflation pipeline. The inflation pipeline can be, for example, a stainless steel pipe, one end of which is connected to the chamber body 11, and the other end (i.e., the first air inlet 7) is connected to an inert gas source, and the inert gas source is used to provide an inert gas. The purpose of setting up the inflation pipeline is to supply inert gas to the chamber body 11 for circulating purge. The reason why the circulating purge process uses inert gas instead of air is that the air contains components such as oxygen and water, which are easy to react with the residual target gas in the chamber body 11 to produce by-products.

[0064] During the cyclic purge process, the inert gas source connected to the first gas inlet 7 provides an inert gas with a pressure range of 30 to 40 Psi (Pounds per Square Inch) and a flow range of 0.1 to 0.3 m / s. 3 / h. The air extraction valve (in the figure, the side extraction fast valve and the side extraction slow valve are indicated by numbers 3 and 2 respectively) has two compressed air interfaces, and the opening of the air extraction valve can be controlled by switching on and off the two compressed air lines.

[0065] In an optional embodiment, the air intake assembly includes an air intake valve 100, and the exhaust assembly includes an exhaust valve 101 and an exhaust pipe 102; wherein the air intake valve 100 and the exhaust valve 101 are respectively arranged at different positions of the chamber body 11;

[0066] One end of the exhaust pipe 102 is connected to the exhaust valve 101, and the other end is connected to a first air extraction element, and the first air extraction element is used to provide negative pressure for the chamber body 11;

[0067] The exhaust valve 101 is used to open when the target gas concentration inside the chamber body 11 is lower than a first threshold value and the chamber pressure reaches a target pressure, so as to cooperate with the first exhaust element to make the chamber pressure inside the chamber body 11 lower than the target pressure;

[0068] The air inlet valve 100 is used to open after the air exhaust valve 101 is opened, so as to connect the chamber body 11 to the first gas environment (such as the atmosphere), and to use the second purge gas (such as air) to exhaust the chamber body 11.

[0069] The target gas may refer to the process gas introduced into the chamber body 11 , or may refer to the gas whose concentration needs to be monitored when the chamber body 11 needs to be opened to ensure the safety and health of the operators. Specifically, it may refer to the toxic, harmful or flammable gas introduced into the chamber body 11 .

[0070] In this embodiment, structures such as an intake valve 100, an exhaust valve 101, and an exhaust pipe 102 are newly added to the semiconductor process equipment. When the semiconductor process equipment process is completed, the target gas concentration in the chamber body 11 can be reduced to a first threshold value by using the charging component and the exhaust component, and adopting the cyclic purge method of the above steps (1) to (6). During the cyclic purge process, the gas pressure in the chamber body 11 is relatively small. After the cyclic purge is completed, the chamber pressure in the chamber body 11 can be made to reach the target pressure by introducing an inert gas into the chamber body 11 (in some embodiments, the target pressure can be equal to the first gas environment pressure (for example, it can be atmospheric pressure), or it can be near the first gas environment pressure. For example, in order to avoid the situation where the chamber body 11 is opened by mistake due to the chamber pressure in the chamber body 11 being greater than the target pressure, the target pressure can be less than or slightly less than the first gas environment pressure). When the chamber pressure in the chamber body 11 reaches the target pressure, the chamber body 11 is ready to be opened. In order to avoid opening the air inlet valve 100 first, which may cause the target gas in the chamber body 11 to overflow into the first gas environment and cause harm to the operating personnel, the exhaust valve 101 may be opened first when the target gas concentration inside the chamber body 11 is lower than the first threshold value and the chamber pressure reaches the target pressure, so as to cooperate with the first vacuum element to make the chamber pressure inside the chamber body 11 lower than the target pressure, so as to avoid the target gas inside the chamber body 11 overflowing into the first gas environment when the air inlet valve 100 is opened; after the exhaust valve 101 is opened, the air inlet valve 100 may be opened to connect the chamber body 11 with the first gas environment. At this time, the exhaust valve 101, the chamber body 11, and the air inlet valve 100 are connected to the first gas environment. The valve 100, the exhaust pipe 102 and the first vacuum element form a gas passage. Under the extraction of the first vacuum element, the external second purge gas (for example, air) flows along this gas passage, and the interior of the chamber body 11 is continuously cleaned during the flow. Then, the second purge gas carrying the target gas and by-product particles remaining in the chamber body 11 is finally extracted from the first vacuum element, and the factory services finally treat the exhausted waste gas and particles. In this way, in this embodiment, the chamber body 11 is exhausted by the large-flow second purge gas, so that the target gas concentration in the chamber body 11 is quickly reduced to below the safe value, thereby improving the efficiency of chamber cleaning while ensuring the health and safety of the operators, which is conducive to improving production efficiency.

[0071] In some embodiments, in order to further reduce the risk of the target gas overflowing from the intake valve 100, the semiconductor process equipment further includes:

[0072] A one-way valve is disposed between the air inlet valve 100 and the chamber body 11 , and the conducting direction of the one-way valve is toward the interior of the chamber body 11 .

[0073] In this way, the one-way valve is used to prevent the target gas from overflowing from the air intake valve 100, which is beneficial to protecting the health and safety of the operators.

[0074] In some embodiments, filters can be installed at the inlet and outlet of the air intake valve 100 (these two filters can be represented by 1001 and 1002 respectively) to filter out impurities during the cleaning process to prevent impurities from entering the air intake valve 100 and affecting the valve life. The second purge gas entering the chamber body 11 can also be filtered to prevent impurities from damaging the components inside the chamber body 11. The static pressure provided by the first exhaust element can be between -3.5 and -5 torr, and the exhaust volume can be between 100 and 200 m 3 / h. That is, the flow rate of gas introduced into the process chamber by the air intake component per unit time can be greater than the flow rate of gas introduced into the process chamber by the gas filling component per unit time. For example, the flow rate of gas introduced into the process chamber by the air intake component per unit time is 300-2000 times the flow rate of gas introduced into the process chamber by the gas filling component per unit time.

[0075] In some embodiments, a target gas sensor 103 may be disposed in the exhaust duct 102, and the target gas concentration in the chamber body 11 may be obtained by acquiring the detection value of the target gas sensor 103. Of course, in some feasible embodiments, the target gas sensor 103 may also be disposed at a location where other target gases flow, and this specification does not limit this.

[0076] In some embodiments, reference Figure 3 and Figure 4 In order to fully clean the chamber body 11 by using the gas loop formed between the air inlet valve 100 and the exhaust valve 101 when the chamber is exhausted, in some embodiments, the air inlet valve 100 and the exhaust valve 101 are respectively arranged on two opposite side walls of the chamber body 11, and the arrangement positions of the air inlet valve 100 and the exhaust valve 101 are close to the target diagonal line, which is one of the diagonals of the top cover 14 of the chamber body 11. In this way, when the air inlet valve 100 and the exhaust valve 101 are opened, the chamber body 11 can be ventilated as evenly as possible everywhere, ensuring a good cleaning effect.

[0077] In addition to the above components, in some embodiments, reference Figure 2 to Figure 5 The semiconductor process equipment may also include: part or all of the structures such as a first pressure sensor A, a second pressure sensor B, an atmospheric switch 12, a swing valve 4, a molecular pump 9, a molecular pump isolation valve 5, and an exhaust pipeline 15.

[0078] In some embodiments, the first pressure sensor A is connected to the chamber body and can be used to detect the chamber pressure in the chamber body 11 .

[0079] In some embodiments, the semiconductor process device also includes a molecular pump 9, a molecular pump cleaning valve 6 and a molecular pump isolation valve 5, wherein the molecular pump isolation valve 5 is arranged between the molecular pump 9 and the exhaust valve, and the second exhaust element 10 is arranged on the side of the molecular pump isolation valve 5 away from the molecular pump 9, and the second exhaust element 10 is connected to the exhaust valve (that is, the second exhaust element 10 is connected to the other end of the exhaust valve relative to the chamber body 11); the molecular pump isolation valve 5 is used to control the on and off of the exhaust of the exhaust port of the molecular pump 9.

[0080] It should be noted that the function of the molecular pump 9 is to pump the chamber to a vacuum state during the semiconductor process. For example, the plasma etching equipment requires the chamber pressure to reach a vacuum state, and then uses high pressure to plasmatize the residual gas in the chamber to etch the wafer. The molecular pump does not play a role in the cleaning process, but because it is part of the entire set of etching equipment during cleaning, it is inevitable to consider the situation of the molecular pump. In some embodiments, one end of the molecular pump cleaning valve 6 is connected to the molecular pump 9, and the other end is connected to the second air inlet 8, and the second air inlet 8 is connected to an inert gas source. The molecular pump isolation valve 5, the molecular pump cleaning valve 6 and the air inlet 8 can ensure that the molecular pump has a normal load. The gas at the air inlet 8 is nitrogen, which ensures the normal operation of the molecular pump 9.

[0081] In some embodiments, the swing valve 4 can be installed on the bottom surface of the chamber body 11, and the lower part of the swing valve 4 can be connected to the molecular pump 9. The swing valve 4 is used to control the set pressure in the chamber body 11 during the process. During the entire cleaning process, the molecular pump 9 is turned on. Since the molecular pump can form an internal circulation through the molecular pump isolation valve 5 and the molecular pump cleaning valve 6, the swing valve 4 does not need to be opened. Therefore, during the cleaning process, the swing valve 4 is closed. The valves at both ends of the molecular pump 9 do not play a role in cleaning.

[0082] In some embodiments, the gas extraction valve is a side extraction valve, which includes a side extraction slow valve 2 and a side extraction fast valve 3 connected in parallel. The side extraction valve can be connected to the inlet of the gas extraction pipeline 15, and the outlet of the gas extraction pipeline 15 is connected to the second gas extraction element 10 in the gray area, and the second gas extraction element 10 is, for example, a dry pump. The middle part of the gas extraction pipeline 15 is also connected to another second pressure sensor B and the outlet of the molecular pump isolation valve 5, and the inlet of the molecular pump isolation valve 5 is connected to the exhaust port of the molecular pump 9. When the valve opening of the side extraction valve is small (for example, when the side extraction slow valve is opened), the second gas extraction element 10 can extract the gas in the chamber body 11 at a slower speed; conversely (for example, when the side extraction fast valve is opened), the gas in the chamber body 11 can be extracted at a faster speed. The second pressure sensor B is used to monitor the outlet pressure of the molecular pump or the inlet pressure of the second gas extraction element, in order to detect the pressure condition for opening the molecular pump isolation valve during the cleaning process.

[0083] Optionally, in one embodiment, an atmospheric switch 12 may be installed on the side wall of the chamber body 11. The atmospheric switch 12 has a trigger pressure value, which may be set to, for example, 760 Torr of atmospheric pressure. Before the chamber body 11 is opened, the pressure inside and outside the chamber body 11 needs to be balanced. The inflation valve 1 may be opened to fill the chamber body 11 with inert gas. During this process, the chamber pressure inside the chamber body 11 gradually increases. When the chamber pressure is not lower than the trigger pressure value of the atmospheric switch 12, the atmospheric switch 12 may output a target signal indicating that the pressure inside the chamber body 11 has reached the external atmospheric pressure (i.e., the atmospheric switch 12 is used to output a target signal when the chamber pressure inside the chamber body is greater than or equal to the target pressure), and the chamber body 11 is in a state of internal and external pressure balance. Since the first pressure sensor A is mainly used to measure the chamber pressure inside the chamber body 11 during the process, and its range is much lower than the atmospheric pressure, an additional atmospheric switch 12 may be provided to judge the relationship between the pressure inside the chamber body 11 and the atmospheric pressure. Of course, in some implementations, the relationship between the chamber pressure in the chamber body 11 and the atmospheric pressure may also be determined by other methods or devices. This specification does not limit this, and the specific method depends on the actual situation.

[0084] The outer diameter of the exhaust pipe 102 can be about 38 mm. A larger diameter is conducive to the introduction of a larger flow of the second purge gas to ensure better cleaning efficiency. In addition to the above components, Figure 2 to Figure 5 In the figure, the numbers 7, 8 and 13 respectively represent different air inlets.

[0085] Exemplary Methods

[0086] Some embodiments of the present specification also provide a method for cleaning semiconductor process equipment, such as Figure 6As shown, the semiconductor process equipment described in any of the above embodiments is applied; the cleaning method of the semiconductor process equipment includes:

[0087] S501: performing a first cleaning process by using a circulating purge device to introduce a first purge gas into the process chamber to reduce the target gas concentration inside the chamber body to a first threshold value;

[0088] S502: After the first cleaning process is completed, a second purge gas is introduced into the process chamber using the air intake assembly of the chamber ventilation device, so as to use the second purge gas to perform a second cleaning process (i.e., chamber exhaust) on the chamber body until the target gas concentration in the chamber body is less than a second threshold value, and the second threshold value is less than the first threshold value; the first purge gas is different from the second purge gas.

[0089] Optionally, the first cleaning process includes a cyclic purge process; the first purge gas is an inert gas; the cyclic purge process includes:

[0090] Inflating step: closing the exhaust assembly and introducing a first purge gas into the process chamber using the inflation assembly;

[0091] Pumping step: after the chamber pressure reaches a preset value, close the inflation component and open the pumping component to pump out the gas in the chamber;

[0092] And, when the preset number of cyclic purge times is not reached, the inflation step and the exhaust step are cyclically performed.

[0093] Alternatively, if Figure 7 As shown, after the first cleaning process (circular purge) is completed, before the second purge gas is introduced into the process chamber by the air intake assembly of the chamber ventilation device (before the chamber is exhausted), the process also includes a pressure balance process inside and outside the chamber:

[0094] The other valves of the chamber body are closed, and the inflation valve is opened to fill the chamber body with the inert gas using the inert gas source until the chamber pressure in the chamber body reaches the target pressure; the target pressure is equal to the atmospheric pressure.

[0095] Optionally, after the first cleaning process is completed, introducing a second purge gas into the process chamber using an air intake assembly of a chamber ventilation device, so as to perform a second cleaning process on the chamber body using the second purge gas until the target gas concentration in the chamber body is less than a second threshold value, comprises:

[0096] After the exhaust valve is opened, the intake valve is opened to connect the chamber body to the first gas environment, and the second purge gas is used to perform a second chamber cleaning process on the chamber body;

[0097] In some embodiments, in order to ensure that the chamber pressure in the chamber body is less than the target pressure when the intake valve is opened, and to prevent the target gas from overflowing through the intake valve, the intake valve is specifically used to open after the exhaust valve is opened for a predetermined time, so that the first exhaust element exhausts the chamber body for a certain period of time, and ensures that the pressure inside the chamber body is less than the target pressure. The predetermined time may be about 5 seconds.

[0098] During the execution of the second cleaning process, obtaining a detection value of the target gas sensor, wherein the detection value is used to characterize the concentration of the target gas in the chamber body;

[0099] During the execution of the second cleaning process, if the detection value is less than the second threshold, or the duration of the chamber exhaust process exceeds a predetermined time threshold, the second cleaning process (ie, the chamber exhaust process) is stopped.

[0100] In some embodiments, reference Figure 8 , the cyclic purge process can include:

[0101] S1. Close the swing valve / bypass pump speed valve (i.e., pumping valve), and open the molecular pump isolation valve / molecular pump cleaning valve;

[0102] S2, accepting the set number of cycles i (i.e., the number of cycles of the cyclic purge process, for example, the number of cycles can range from 100 to 300 times);

[0103] S3, judging whether i is greater than 0, if not, it indicates that the cyclic purge process is finished and the pressure balance process inside and outside the chamber can be performed; if yes, proceeding to step S4;

[0104] S4, open the inflation valve;

[0105] S5, determine whether the chamber pressure reaches a certain value, if not, return to step S5 for loop determination, if yes, proceed to step S6;

[0106] S6. Close the charging valve / molecular pump isolation valve / molecular pump cleaning valve;

[0107] S7, open the side pump slow valve;

[0108] S8, delay for a certain period of time;

[0109] S9. To prevent contamination of the chamber body, close the slow valve for bypass pumping and open the fast valve for bypass pumping;

[0110] S10, judging whether the inlet pressure of the second pumping element is less than the tolerance range of the molecular pump, if not, returning to step S10 for loop judgment, if yes, proceeding to step S11;

[0111] S11, close the bypass fast valve, and open the molecular pump isolation valve / molecular pump cleaning valve;

[0112] S12, open the swing valve;

[0113] S13, delay for a certain period of time;

[0114] S14, close the swing valve;

[0115] S15, i=i-1, and go to step S3;

[0116] As mentioned above, the reasons why the chamber exhaust is not directly used at the beginning of the cleaning process (when the target gas concentration is greater than the first threshold) but the cyclic purge process is used are at least the following two aspects:

[0117] At the beginning of cleaning, the target gas concentration is high. If the air inlet valve and the exhaust valve are opened, there is a high risk of the target gas spilling into the atmosphere.

[0118] As mentioned above, if the second purge gas is directly introduced when the target gas concentration is relatively high, the water and oxygen in the second purge gas will react with the target gas to generate byproducts with a high probability, which may cause damage to the chamber body, valves and other components.

[0119] Therefore, in this embodiment, a process such as cyclic purge is first used to reduce the concentration of the target gas in the chamber body to below a first threshold, and then the chamber is exhausted for rapid cleaning.

[0120] In addition, it should be noted that if a cyclic purge process is used to reduce the target gas concentration in the chamber body to a first threshold value, after the cyclic purge process is completed, the gas pressure in the chamber body (lower than 100mtorr at this time) is much lower than the atmospheric pressure (760torr). At this time, the air inlet valve or the exhaust valve cannot be opened directly. The chamber exhaust process can only be carried out after the pressure inside and outside the chamber body is balanced.

[0121] In some embodiments, the pressure balance process inside and outside the chamber can refer to Fig. 9 , the process includes:

[0122] S21, close the side pumping speed valve / swing valve; before inflation, close all openings connected to the chamber body to ensure that the chamber body is in a completely closed state;

[0123] S22, opening the charging valve to fill the chamber body with inert gas, and as the inert gas is filled, the pressure in the chamber body gradually increases;

[0124] S23, judging whether the chamber pressure is greater than or equal to P0 (P0 may refer to a target pressure, which may be, for example, atmospheric pressure) through the atmospheric switch, if so, proceeding to step S24, if not, returning to step S23 for a loop judgment;

[0125] S24, close the inflation valve;

[0126] The first threshold value can be determined according to the demand. For different target gases, the safe allowable range (hereinafter referred to as the second threshold value) can be different. Accordingly, the first threshold values ​​corresponding to different target gases can also be different. The second threshold value of the target gas can be the TWA (Time-Weighted Average) value of the target gas. The definition of the TWA value of the target gas is the average concentration limit calculated based on 8 working hours per day and 40 working hours per week. The TWA values ​​corresponding to different target gases may be different, such as the TWA of B2H6 is 0.1ppm. The first threshold value can be twice the second threshold value.

[0127] For the chamber exhaust process, please refer to Fig.10 , the process may include:

[0128] S31, open the exhaust valve;

[0129] S32, delaying a predetermined time T2 (the predetermined time may not exceed 5 seconds), during which the first pumping element pumps the chamber pressure inside the chamber body to a pressure lower than the target pressure. For example, when the target pressure is 760 torr and the first pumping element is set to -4 torr, the first pumping element may pump the pressure of the chamber body to 756 torr, so that the chamber pressure of the chamber body is lower than the target pressure.

[0130] S33, opening the air inlet valve. After the air inlet valve is opened, the second external purge gas continuously flows into the chamber body through the air inlet valve, flows in the chamber to quickly clean the chamber, and finally flows into the exhaust pipe through the exhaust valve and is extracted by the first exhaust element;

[0131] S34, continuously collecting the concentration C of the gas concentration sensor (i.e., the target gas sensor), and the target gas sensor connected to the exhaust pipe continuously monitors the target gas concentration in the exhaust pipe. At this stage, the gas in the cavity is in a flowing state, and the static pressure of the gas in the cavity is between 756 and 760 Torr;

[0132] S35. Determine whether C is less than or equal to C0 (i.e., the second threshold value), and the duration is greater than or equal to T3 (the time value range can be between 1min and 5min). If so, close the exhaust valve and the air intake valve. If not, determine whether the ventilation time is greater than or equal to T4 (predetermined time threshold). If so, close the exhaust valve and the air intake valve to end the chamber ventilation process to avoid the problem that the chamber exhaust process cannot be ended due to problems such as sensor failure. If not, return to step S34.

[0133] For the relevant limitations on the cleaning method of semiconductor process equipment, please refer to the relevant description above, and this specification will not go into details here.

[0134] In order to illustrate the effects of the semiconductor process equipment and the cleaning method thereof provided in the embodiments of this specification, one embodiment of this specification verifies the effect of cleaning using the semiconductor process equipment by means of a comparative experiment.

[0135] Specifically, for some highly toxic gases with very low safety allowable concentrations, compared with the cleaning method of performing cyclic purge by setting a larger number of cycles, the cleaning method provided in the implementation mode of this specification improves the cleaning efficiency and reduces the preparation time required for chamber opening operations through a three-stage cleaning process of fewer cyclic purges, a pressure balance process inside and outside the chamber, and a shorter chamber exhaust process.

[0136] The following is a comparison of different cleaning methods using the tracer gas concentration decay method, which uses the formula:

[0137]

[0138] Where C(τ) represents the concentration of tracer gas in the reaction chamber at time τ (in mg / m 3 ); N is the ventilation frequency of the process chamber, N = Q / V, Q is the ventilation volume in the chamber (unit: m 3 ), V is the volume of the cavity (unit: m 3 ), when the exhaust air flow rate is constant at q (unit: m 3 / h), Q=q(τ-τ0).

[0139] The process chamber volume V is 0.09m 3 The tracer gas is B2H6, and its initial concentration is Set to 20ppm (23mg / m 3 ,1atm,20℃),the allowable concentration is 0.1ppm(0.115mg / m 3 ,1atm,20℃).When circulating purge,q is 0.12m 3 / h, each cycle purge time is 1.2min; when the chamber is exhausted, q is 10m 3 / h;

[0140] The following compares the cleaning efficiency of three cleaning methods, which are: 1. Circular purge is used throughout the process; 2. The cleaning method provided in the embodiment of this specification is used, wherein the number of cyclic purges is ten times; 3. The cleaning method provided in the embodiment of this specification is used, wherein the number of cyclic purges is twenty times; (It should be noted that in this experiment, since the conditions such as the volume of the process chamber are quite different from the actual environment, the number of cyclic purges is relatively small. The number of cyclic purges in the actual production process can be adjusted according to the concentration of the target gas, and is generally greater than or equal to the number set in the experiment).

[0141] The tracer gas concentration variation curves of the three methods are as follows: Fig.11 As shown, Fig.11 In the figure, the horizontal axis is time in hours (h), and the vertical axis is the concentration of tracer gas B2H6 in mg / m 3 .from Fig.11 It can be found that when entering the chamber ventilation process, the concentration of tracer gas drops suddenly faster. If the concentration of tracer gas reaches 0.115mg / m 3 Hereinafter, method 1 requires 1.99 hours, method 2 requires 0.42 hours, and method 3 requires 0.61 hours. It can be seen that the cleaning method provided in the embodiment of this specification can greatly increase the cleaning speed and improve the cleaning efficiency compared with method 1.

[0142] Exemplary Devices

[0143] In an exemplary embodiment of the present specification, a semiconductor process equipment is also provided, which includes: a controller and a semiconductor process equipment as described in any of the above embodiments, and the controller is configured to clean the semiconductor process equipment according to the cleaning method of the semiconductor process equipment described in any of the above embodiments.

[0144] In some embodiments, reference Fig.12 The controller includes a terminal and an industrial computer. The operator can issue a cleaning instruction on the terminal software interface. After receiving the instruction, the industrial computer issues a control instruction to each component according to the process to execute the cyclic purge process, the pressure balance process inside and outside the chamber, and the chamber exhaust process. During the chamber exhaust process, the industrial computer controls the solenoid valve, which in turn controls the on / off of the exhaust valve and the intake valve. The industrial computer also receives the concentration signal of the target gas sensor to monitor the cleaning process.

[0145] In an exemplary embodiment of the present specification, a chamber cleaning device is provided for cleaning semiconductor process equipment, wherein the semiconductor process equipment comprises a chamber body, an air intake valve, an exhaust valve and an exhaust pipe; wherein the air intake valve and the exhaust valve are respectively arranged at different positions of the chamber body; one end of the exhaust pipe is connected to the exhaust valve, and the other end is connected to a first exhaust element; the chamber cleaning device comprises:

[0146] a first cleaning module, configured to perform a first cleaning process to reduce a target gas concentration inside the chamber body to a first threshold;

[0147] an exhaust control module, configured to open the first exhaust element and the exhaust valve when the target gas concentration inside the chamber body is lower than a first threshold value and the chamber pressure reaches a target pressure, so as to cooperate with the first exhaust element to make the chamber pressure inside the chamber body lower than the target pressure;

[0148] An air intake control module is used to open the air intake valve after the exhaust valve is opened to connect the chamber body to the first gas environment, and use the second purge gas to exhaust the chamber body until the target gas concentration in the chamber body is less than a second threshold value, and the second threshold value is less than the first threshold value.

[0149] For the specific definition of the chamber cleaning device, please refer to the definition of the cleaning method of the semiconductor process equipment mentioned above, which will not be repeated here. Each module in the above chamber cleaning device can be implemented in whole or in part by software, hardware and a combination thereof. The above modules can be embedded in or independent of the processor in the computer device in the form of hardware, or can be stored in the memory of the computer device in the form of software, so that the processor can call and execute the operations corresponding to the above modules.

[0150] Exemplary Computing Devices

[0151] Another embodiment of the present application further provides a computing device, see Fig.13 As shown, an exemplary embodiment of the present specification also provides a computing device, including: a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, the steps of the cleaning method of the semiconductor process equipment according to various embodiments of the present specification described in the above embodiments of the present specification are executed.

[0152] The internal structure of the computing device can be as follows Fig.13As shown, the computing device includes a processor, a memory, a network interface and an input device connected through a system bus. Among them, the processor of the computing device is used to provide computing and control capabilities. The memory of the computing device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The network interface of the computing device is used to communicate with an external terminal through a network connection. When the computer program is executed by the processor, the steps in the cleaning method of the semiconductor process equipment according to various embodiments of the present specification are described in the above embodiments of the present specification.

[0153] The processor may include a main processor and may also include a baseband chip, a modem, etc.

[0154] The memory stores a program for executing the technical solution of the present invention, and may also store an operating system and other key services. Specifically, the program may include a program code, and the program code includes computer operation instructions. More specifically, the memory may include a read-only memory (ROM), other types of static storage devices that can store static information and instructions, a random access memory (RAM), other types of dynamic storage devices that can store information and instructions, a disk storage, a flash, and the like.

[0155] The processor may be a general-purpose processor, such as a general-purpose central processing unit (CPU), a microprocessor, etc., or an application-specific integrated circuit (ASIC), or one or more integrated circuits for controlling the execution of the program of the scheme of the present invention. It may also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic device, a discrete gate or transistor logic device, or a discrete hardware component.

[0156] The input device may include a device for receiving data and information input by a user, such as a keyboard, a mouse, a camera, a scanner, a light pen, a voice input device, a touch screen, a pedometer, or a gravity sensor.

[0157] Output devices may include means that allow information to be output to a user, such as display screens, printers, speakers, etc.

[0158] The communication interface may include using any transceiver or the like to communicate with other devices or communication networks, such as Ethernet, Radio Access Network (RAN), Wireless Local Area Network (WLAN), etc.

[0159] The processor executes the program stored in the memory and calls other devices, which can be used to implement each step of the cleaning method of any semiconductor process equipment provided in the above embodiments of the present application.

[0160] The computing device may also include a display component and a voice component. The display component may be a liquid crystal display or an electronic ink display. The input device of the computing device may be a touch layer covered on the display component, or a button, trackball or touchpad provided on the housing of the computing device, or an external keyboard, touchpad or mouse.

[0161] Those skilled in the art will understand that Fig.13 The structure shown in the figure is only a block diagram of a part of the structure related to the scheme of this specification, and does not constitute a limitation on the computing device to which the scheme of this specification is applied. The specific computing device may include more or fewer components than shown in the figure, or combine certain components, or have a different arrangement of components.

[0162] Exemplary computer program products and storage media

[0163] In addition to the above-mentioned methods and devices, the cleaning method of semiconductor process equipment provided in the embodiments of this specification may also be a computer program product, which includes computer program instructions, which, when executed by a processor, enable the processor to execute the steps of the cleaning method of semiconductor process equipment according to various embodiments of this specification described in the above "Exemplary Method" section of this specification.

[0164] The computer program product may be written in any combination of one or more programming languages ​​to write program code for performing the operations of the embodiments of the present specification, including object-oriented programming languages ​​such as Java, C++, etc., and conventional procedural programming languages ​​such as "C" or similar programming languages. The program code may be executed entirely on the user computing device, partially on the user device, as a separate software package, partially on the user computing device and partially on a remote computing device, or entirely on a remote computing device or server.

[0165] In addition, an embodiment of the present specification also provides a computer-readable storage medium on which a computer program is stored, and the computer program is executed by a processor to perform the steps of the cleaning method of semiconductor process equipment according to various embodiments of the present specification described in the above "Exemplary Method" section of the present specification.

[0166] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this specification can include non-volatile and / or volatile memory. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM) or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. As an illustration and not limitation, RAM is available in many forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM).

[0167] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0168] The above-mentioned embodiments only express several implementation methods of this specification, and the descriptions are relatively specific and detailed, but they cannot be understood as limiting the scope of the solutions provided by the embodiments of this specification. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of this specification, which all belong to the protection scope of this specification. Therefore, the protection scope of the patent of this specification shall be based on the attached claims.

Claims

1. A semiconductor process equipment, characterized in that: include: Process chamber, circulating purge device and chamber ventilation device; wherein, The circulating purge device includes an air charging component and an air exhaust component which are arranged at different positions of the side wall of the process chamber and communicated with the inner space of the process chamber; The chamber ventilation device includes an air intake component and an exhaust component which are arranged at different positions of the side wall of the process chamber and communicated with the internal space of the process chamber; The gas charging assembly is used to introduce a first purge gas into the process chamber; The gas inlet assembly is used to introduce a second purge gas into the process chamber; The first purge gas is different from the second purge gas; The flow rate of gas introduced into the process chamber by the air intake component per unit time is greater than the flow rate of gas introduced into the process chamber by the gas charging component per unit time.

2. The semiconductor process equipment according to claim 1, characterized in that: The process chamber comprises a chamber body, the air intake assembly comprises an air intake valve, and the exhaust assembly comprises an exhaust valve and an exhaust pipe; The air inlet valve and the air exhaust valve are respectively arranged at different positions of the chamber body; One end of the exhaust pipe is connected to the exhaust valve, and the other end is connected to a first air pumping element, and the first air pumping element is used to provide negative pressure for the chamber body.

3. The semiconductor process equipment according to claim 2, characterized in that: The chamber body is a cubic structure with four side walls, which are opposite to each other in pairs; the chamber top cover is a quadrilateral, covering the top of the chamber; the air intake valve and the exhaust valve are respectively arranged on two opposite side walls of the chamber body, and the setting positions of the air intake valve and the exhaust valve are close to the target diagonal, which is one of the diagonals of the top cover of the chamber body.

4. The semiconductor process equipment according to claim 2, characterized in that: Also includes: A target gas sensor is disposed in the exhaust pipe, and a detection value of the target gas sensor is used to characterize the concentration of the target gas in the chamber body.

5. The semiconductor process equipment according to claim 2, characterized in that: Also includes: A one-way valve is arranged between the air inlet valve and the chamber body, and the conducting direction of the one-way valve is toward the interior of the chamber body.

6. The semiconductor process equipment according to claim 2, characterized in that: The semiconductor process equipment further includes: a first pressure sensor and an atmospheric switch connected to the chamber body; The first pressure sensor is used to detect the chamber pressure inside the chamber body; The atmospheric switch is used to output a target signal when the chamber pressure inside the chamber body is greater than or equal to the target pressure.

7. The semiconductor process equipment according to claim 1, characterized in that: The inflation component includes: an inflation valve; the exhaust component includes: an exhaust valve and a second exhaust element; wherein, The inflation valve and the exhaust valve are respectively arranged at different positions of the side wall of the process chamber and are communicated with the inner space of the process chamber; The second air extraction element is connected to the other end of the air extraction valve relative to the chamber body.

8. A method for cleaning semiconductor process equipment, characterized in that: A semiconductor process equipment applied to any one of claims 1 to 7; The cleaning method of the semiconductor process equipment comprises: Performing a first cleaning process using a circulating purge device to introduce a first purge gas into the process chamber to reduce the target gas concentration inside the chamber body to a first threshold value; After the first cleaning process is completed, a second purge gas is introduced into the process chamber using an air intake assembly of the chamber ventilation device, so as to perform a second cleaning process on the chamber body using the second purge gas until the target gas concentration in the chamber body is less than a second threshold value, and the second threshold value is less than the first threshold value; the first purge gas is different from the second purge gas.

9. The method according to claim 8, characterized in that The first cleaning process includes a cyclic purge process; the cyclic purge process includes: Inflating step: closing the exhaust assembly and introducing a first purge gas into the process chamber using the inflation assembly; Pumping step: after the chamber pressure reaches a preset value, close the inflation component and open the pumping component to pump out the gas in the chamber; And, when the preset number of cyclic purge times is not reached, the inflation step and the exhaust step are cyclically performed.

10. The method according to claim 8, characterized in that After the first cleaning process and the second cleaning process, the method further includes: The other valves of the chamber body are closed, and the inflation valve is opened to fill the chamber body with the inert gas using an inert gas source until the chamber pressure in the chamber body reaches a target pressure; the target pressure is equal to the atmospheric pressure.

11. The method according to claim 8, characterized in that After the first cleaning process is completed, introducing a second purge gas into the process chamber by using an air intake assembly of the chamber ventilation device to perform a second cleaning process on the chamber body by using the second purge gas until the target gas concentration in the chamber body is less than a second threshold value includes: After the exhaust valve is opened, the air inlet valve is opened to connect the chamber body to the atmosphere, and the second cleaning process is performed on the chamber body using the second purge gas; Acquire a detection value of the target gas concentration, wherein the detection value is used to characterize the target gas concentration in the chamber body; When the detection value is less than the second threshold value, and / or the duration of the chamber exhaust process exceeds a predetermined time threshold value, the second cleaning process is stopped.

12. The method according to any one of claims 8 to 10, characterized in that: The first purge gas is an inert gas, and the second purge gas is air.

13. A computing device, characterized in that: The method comprises a memory, a processor and a computer program stored in the memory and executable on the processor, wherein the processor implements the cleaning method of the semiconductor process equipment according to any one of claims 8 to 12 when executing the computer program.

14. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the cleaning method of semiconductor process equipment according to any one of claims 8 to 12 is implemented.

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