Method for roughening surface of glass substrate

Abstract

The invention relates to a method for roughening the surface of a glass substrate in the field of glass substrates, which comprises the following steps: soaking a washed glass substrate in a first KOH solution soaking tank for pre-roughening treatment, so that the surface roughness of the glass substrate can be preliminarily adjusted, and the glass substrate is easier to accept subsequent secondary roughening treatment; putting the glass substrate subjected to primary soaking roughening into a second KOH solution soaking tank for secondary roughening treatment, performing uniform diffusion treatment on a KOH solution in the second KOH solution soaking tank by adopting an ultrasonic generator, and meanwhile, stirring the KOH solution by virtue of a stirring device, the KOH solution in the second KOH solution soaking tank can uniformly etch the glass substrate, the glass substrate roughening etching efficiency and quality are improved, the ultrasonic generator is adjusted by monitoring the size distribution of cavitation bubbles in the KOH solution in the second KOH solution soaking tank and the concentration of silicon ions in real time, the treatment process is optimized, and the glass substrate roughening quality is improved. And the roughening efficiency and quality are enhanced.

Description

Technical Field

[0001] The present invention relates to the field of glass substrates, and in particular to a method for roughening the surface of a glass substrate. Background Art

[0002] In today's display technology field, glass substrates, as key basic components, play a vital role. Especially in the development of Micro LED display panels, glass substrates play an indispensable role. Micro LED display panels have gradually become the forefront of display technology with their high resolution, excellent color, low power consumption, and thin and flexible advantages. In the manufacturing process of Micro LED display panels, glass substrates are used to carry LED chips and achieve electrode conduction and image display through a series of complex process steps.

[0003] Generally, a glass substrate has a flat and smooth surface structure. In order to meet specific process requirements, such as achieving better conduction effect in the quartz glass pressing process, the surface of the glass substrate needs to be roughened. Existing glass substrate roughening methods mainly include dry treatment processes, among which the more common one is to use plasma to treat the surface. However, this dry treatment has obvious limitations. The surface after plasma treatment often has residual metal and particles. In order to remove these residual substances, an additional wet cleaning step has to be added.

[0004] However, there are still some defects in the actual application of the roughening method for the existing glass substrate. First, although the dry roughening process of the existing glass substrate by plasma surface treatment can change the surface characteristics of the glass substrate to a certain extent, it cannot avoid the residue of metal and particles, which has an adverse effect on the subsequent process steps, thereby affecting the performance and quality of the display panel. Secondly, since additional wet cleaning is required to remove the metal and particle residues, the entire process becomes more complicated and lengthy, which not only increases the production time and cost, but also reduces the production efficiency.

[0005] Furthermore, the existing roughening methods are insufficient in controlling the degree and uniformity of roughening, resulting in inconsistent contact between the glass substrate and other components during the lamination process, which in turn affects the overall performance of the display panel. In addition, since the roughening process cannot be accurately controlled and the uniformity and stability of the roughening etching solution cannot be easily controlled, it is difficult to ensure the etching efficiency and quality of the roughened glass substrate, which affects the practicality of the glass substrate. In addition, in the existing roughening methods, there is a relative lack of means for monitoring and adjusting parameters during the treatment process, and it is impossible to effectively monitor and control key parameters in real time, such as the ion concentration in the solution, the bubble size distribution, etc., which makes it difficult to achieve the optimal treatment effect and increases the uncertainty and uncontrollability of the process. Summary of the invention

[0006] The purpose of the present invention is to solve the above defects and provide a method for roughening the surface of a glass substrate to solve the technical problems that the existing roughening methods for glass substrates in the above background technology have poor etching effect and poor roughening quality, as well as lack of corresponding monitoring and control, resulting in poor use effect of the roughening method and affecting the roughening quality and production efficiency of the glass substrate.

[0007] The object of the present invention is achieved in the following ways:

[0008] A method for roughening the surface of a glass substrate, the roughening method comprising the following steps:

[0009] Step 1: Soaking to remove impurities, soaking the glass substrate in a HCL solution pool of a preset concentration to remove metal residues on the surface of the glass substrate;

[0010] Step 2: Rinse, take out the glass substrate after being immersed in the HCL solution pool, place it in the first water tank, and perform multiple cycles of rinsing to remove metal ions and particles attached to the surface of the glass substrate;

[0011] Step 3: First pre-roughening soaking, soaking the rinsed glass substrate in a first soaking KOH solution pool for treatment, and pre-roughening the surface of the glass substrate;

[0012] Step 4: Second rough soaking, taking out the glass substrate soaked in the first KOH solution pool, and placing the glass substrate in the second KOH solution pool for soaking, performing a secondary roughening treatment on the surface of the glass substrate, using an ultrasonic generator to evenly diffuse the KOH solution, and stirring the KOH solution by a stirring device, by real-time monitoring the cavitation bubble size distribution in the KOH solution and the silicon ion concentration in the KOH solution, adjusting the ultrasonic generator parameters according to the monitoring results, and taking the glass substrate out of the KOH solution;

[0013] Step 5: cleaning, taking out the glass substrate after the secondary roughening treatment, placing it in a second water tank for multiple rinses to remove the KOH solution and roughening particles remaining on the surface of the glass substrate;

[0014] Step 6: Drying: placing the rinsed glass substrate in a containing tank containing isopropyl alcohol, and performing a drying process on the glass substrate through the Marangoni effect to complete the roughening of the surface of the glass substrate.

[0015] Further in the above description, in step 1, the glass substrate is immersed in a HCL solution pool with a HCL concentration of 3%-5% for 950s-1050s and a soaking temperature of 23°-27°, and the glass substrate is placed in the HCL solution pool and swayed up and down 55-65 times / min.

[0016] Further in the above description, in the step three, the glass substrate rinsed in the step two is taken out from the first water tank, and is placed in a first immersion KOH solution pool containing a KOH concentration of 4%-5% for immersion, the immersion time is 1480s-1520s, the immersion temperature is 23°-27°, and the glass substrate is placed in the first immersion KOH solution pool and shaken up and down 55-65 times / min to neutralize the solution on the surface of the glass substrate, so that the glass substrate is pre-roughened.

[0017] Further in the above description, in step 4, a KOH solution in a second KOH solution immersion pool is prepared, a KOH solution with a mass percentage of 20%-30% is used, nano-silicon dioxide particles with a particle size of 20nm are added to the KOH solution in the second immersion pool, and the KOH solution is evenly dispersed by an ultrasonic generator to obtain a uniform mixed KOH solution.

[0018] In the above description, the mixed KOH solution is heated to 85° by a heating device, and the pH value of the mixed KOH solution is monitored in real time by a pH meter, and the pH value of the mixed KOH solution is adjusted to 13.5±0.1 according to the monitored pH value.

[0019] Further in the above description, the mixed KOH solution is uniformly diffused by an ultrasonic generator with a power density of 50 W / cm2, and the mixed KOH solution is stirred by a micro-stirrer with a rotation speed of 200 rpm. A sound intensity sensor is set to monitor the sound intensity change in the mixed KOH solution in real time, a high-speed camera system is used to detect cavitation bubbles in the mixed KOH solution, and the ultrasonic power output is adjusted according to the sound intensity data, and the duration and frequency of the ultrasonic generator are adjusted and controlled.

[0020] In the above description, the glass substrate is placed in the second KOH solution immersion tank in a liftable manner by a lifting device, the change of silicon ion concentration in the mixed KOH solution is monitored in real time by an in-situ spectrometer, and the glass substrate is lifted out of the solution by the lifting device.

[0021] Further in the above description, in the second rough soaking of step 4, the glass substrate is placed in a second soaking KOH solution pool for soaking, the soaking time is 1480s-1520s, the soaking temperature is 23°-27°, and the glass substrate is shaken up and down 55-65 times / min to roughen it.

[0022] Further in the above description, the cleaning in step five includes a first cleaning and a second cleaning, and the first cleaning and the second cleaning and the rinsing in step two are all performed by overflow cleaning and spray cleaning. At the same time, the cleaned glass substrate is dried by a hot air drying device to ensure that there is no residual moisture on the surface of the glass substrate.

[0023] Further in the above description, after the surface of the glass substrate is roughened, it is scanned and observed by an atomic force microscope with a scanning range of 5 μm×5 μm to obtain the rough surface data of the glass substrate, and the surface roughness average deviation value and pit density are calculated by an image analysis algorithm.

[0024] The beneficial effects of the present invention are as follows: by immersing the rinsed glass substrate in a first immersion KOH solution pool for pre-roughening treatment, the roughness of the surface of the glass substrate can be preliminarily adjusted, so that it is easier to accept the subsequent secondary roughening treatment, thereby improving the uniformity and controllability of the overall roughening effect; the glass substrate that has been roughened by the first immersion is placed in a second immersion KOH solution pool for secondary roughening treatment, and an ultrasonic generator is used to uniformly diffuse the KOH solution in the second immersion KOH solution pool to improve the contact uniformity between the solution and the surface of the glass substrate; at the same time, the KOH solution is stirred by a stirring device, so that the KOH solution in the second immersion KOH solution pool can uniformly etch the glass substrate, and further the uniformity and stability of the KOH solution in the second immersion KOH solution pool can be controlled, thereby improving the etching efficiency and quality of the roughening of the glass substrate;

[0025] And by real-time monitoring of the cavitation bubble size distribution and silicon ion concentration in the KOH solution in the second KOH solution immersion pool to adjust the ultrasonic generator, the KOH solution can achieve a more precise and uniform roughening effect on the glass substrate through ultrasound. By real-time monitoring and adjusting parameters, the processing process can be optimized according to actual conditions to avoid excessive or insufficient roughening, thereby improving the quality and consistency of the roughening of the glass substrate and enhancing the efficiency and quality of the roughening. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a schematic diagram of the overall process of this embodiment;

[0027] Figure 2 This is a flow chart of step 4 in this embodiment; DETAILED DESCRIPTION

[0028] The present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0029] In this embodiment, refer to Figure 1-Figure 2 , a method for roughening the surface of a glass substrate is specifically implemented, the roughening method comprising the following steps:

[0030] Step 1: Soak to remove impurities. Soak the glass substrate in a HCL solution pool with a preset concentration to remove metal residues on the surface of the glass substrate. Soak the glass substrate in a HCL solution pool with a HCL concentration of 4% for 1000 seconds at a soaking temperature of 25°. Place the glass substrate in the HCL solution pool and shake it up and down 60 times / min.

[0031] Step 2: Rinse, take out the glass substrate after immersion in the HCL solution pool, place it in the first water tank, and perform multiple cycles of rinsing to remove metal ions and particles attached to the surface of the glass substrate; through overflow cleaning and spray cleaning, the rinsing time is 800s.

[0032] Step 3: the first pre-roughening soaking, soaking the rinsed glass substrate in the first soaking KOH solution pool for treatment, and pre-roughening the surface of the glass substrate; taking the rinsed glass substrate in the step 2 out of the first water tank, placing it in the first soaking KOH solution pool containing a KOH concentration of 4.3% for soaking, the soaking time is 1500s, the soaking temperature is 25°, and the glass substrate is placed in the first soaking KOH solution pool for shaking up and down 60 times / min to neutralize the solution on the surface of the glass substrate, so that the glass substrate is pre-roughened.

[0033] Step 4: Second rough soaking, taking out the glass substrate soaked in the first KOH solution pool, and placing the glass substrate in the second KOH solution pool for soaking, performing a secondary roughening treatment on the surface of the glass substrate, using an ultrasonic generator to evenly diffuse the KOH solution, and stirring the KOH solution by a stirring device, by real-time monitoring the cavitation bubble size distribution in the KOH solution and the silicon ion concentration in the KOH solution, adjusting the ultrasonic generator parameters according to the monitoring results, and taking the glass substrate out of the KOH solution;

[0034] Step 5: cleaning, taking out the glass substrate after the secondary roughening treatment, placing it in a second water tank for multiple rinses to remove the KOH solution and roughening particles remaining on the surface of the glass substrate; specifically including a first cleaning and a second cleaning, both of which are performed by overflow cleaning and spray cleaning to clean the glass substrate.

[0035] Step 6: Drying: placing the rinsed glass substrate in a containing tank containing isopropyl alcohol, and performing a drying process on the glass substrate through the Marangoni effect to complete the roughening of the surface of the glass substrate.

[0036] In step 4, a KOH solution in a second KOH solution immersion pool is prepared by using a KOH solution with a mass percentage of 20%-30%, adding nano-silicon dioxide particles with a particle size of 20nm to the KOH solution in the second immersion pool, and uniformly dispersing the KOH solution through an ultrasonic generator to obtain a uniform mixed KOH solution.

[0037] The mixed KOH solution is heated to 85° by a heating device, and the pH value of the mixed KOH solution is monitored in real time by a pH meter, and the pH value of the mixed KOH solution is adjusted to 13.5±0.1 according to the monitored pH value.

[0038] The mixed KOH solution is evenly diffused by an ultrasonic generator with a power density of 50 W / cm2. At the same time, the mixed KOH solution is stirred by a micro-stirrer with a rotation speed of 200 rpm. A sound intensity sensor is set to monitor the sound intensity changes in the mixed KOH solution in real time. A high-speed camera system is used to detect cavitation bubbles in the mixed KOH solution. The ultrasonic power output is adjusted according to the sound intensity data, and the duration and frequency of the ultrasonic generator are adjusted and controlled.

[0039] Specifically, in this embodiment, a high-speed camera system is used to perform real-time imaging of cavitation bubbles in a uniformly mixed solution to obtain bubble image data, and the bubble contour information is extracted by an image segmentation algorithm; based on the extracted bubble contour information, a geometric measurement algorithm is used to calculate the equivalent diameter of each bubble to obtain bubble size distribution data; the bubble size distribution data is processed by a statistical analysis algorithm to calculate the average bubble diameter value to determine whether the average diameter reaches a set value, and the reference value in this embodiment is 50 microns;

[0040] When the average diameter reaches 40 microns, the sound intensity sensor is triggered to transmit the control signal to the ultrasonic generator; after receiving the control signal, the ultrasonic generator adjusts the ultrasonic frequency from 40 kHz to 60 kHz through the frequency modulation circuit to change the sound field conditions; the adjusted ultrasonic wave acts on the uniformly mixed solution, affecting the generation and collapse of bubbles in the solution through the acoustic cavitation effect; the sound intensity sensor is used to monitor the adjusted sound field in real time, and the sound pressure distribution data is obtained, and the sound field uniformity is analyzed through the sound field simulation algorithm; according to the sound field uniformity analysis results, the power and phase of the ultrasonic generator are dynamically adjusted through the feedback control algorithm to achieve optimal control of the sound field; the optimized sound field continues to act on the uniformly mixed solution, and the bubble size distribution change trend is predicted through the bubble dynamics model, providing a basis for subsequent process parameter optimization.

[0041] Exemplarily, in one embodiment, a high-speed CMOS camera with a frame rate of 1000 frames per second is used to image the uniform mixed solution, and 8-bit grayscale image sequence data of 4096×3072 pixels is obtained. The image is binarized by the Otsu threshold segmentation algorithm, the bubble contour pixel coordinate information is extracted, the minimum circumscribed circle diameter of the bubble is calculated according to the contour coordinates, and the bubble size distribution histogram is obtained. The arithmetic mean of the histogram is calculated by mathematical statistics. When the average diameter reaches 50 microns, the piezoelectric ceramic transducer with a trigger frequency of 60 kHz and a power of 500 watts is adjusted to adjust the ultrasonic frequency. The spatial distribution data of the sound field is collected by an acoustic pressure sensor array, and the sound pressure cloud map is drawn by the sound field visualization algorithm. The root mean square value of the sound pressure is calculated to evaluate the uniformity of the sound field. Based on the Levenberg-Marquardt optimization algorithm, the amplitude and phase of the transducer driving voltage are adjusted to minimize the root mean square value and achieve the optimization of the sound field uniformity. The Rayleigh-Plesset equation is used to establish a bubble dynamics model, calculate the change of bubble radius at different times, predict the evolution of bubble size distribution, and optimize process parameters such as ultrasonic frequency and power to synchronize the bubble rupture moment with the reaction process on the glass substrate surface, thereby improving the roughening efficiency and uniformity.

[0042] The glass substrate is lifted and lowered in the second KOH solution immersion tank by a lifting device, and the concentration change of silicon ions in the mixed KOH solution is monitored in real time by an in-situ spectrometer, and the glass substrate is lifted out of the solution by the lifting device.

[0043] Specifically, an in-situ spectrometer is used to monitor the change of silicon ion concentration in the uniformly mixed solution in real time to obtain silicon ion concentration data; the obtained silicon ion concentration data is compared with a preset threshold value of 0.5 mol per liter to determine whether the silicon ion concentration has reached the threshold; if the silicon ion concentration reaches 0.5 mol per liter, the automatic lifting device is triggered to control the lifting speed according to the preset speed parameter of 0.5 mm per second; the lifting displacement of the glass substrate is monitored in real time by a high-precision displacement sensor to obtain the real-time position data of the glass substrate; according to the real-time position data of the glass substrate, the lifting speed of the automatic lifting device is dynamically adjusted to ensure that the glass substrate is slowly lifted out of the solution at a speed of 0.5 mm per second.

[0044] Exemplarily, an in-situ spectrometer is used to monitor in real time the change in silicon ion concentration in a uniformly mixed KOH solution, and silicon ion concentration data is acquired every 0.1 second. The acquired silicon ion concentration data is compared in real time with a preset threshold value of 0.5 mol per liter. By setting the judgment conditions, when the silicon ion concentration is detected to reach or exceed 0.5 mol per liter for three consecutive times, the automatic lifting device is triggered, and the speed of the lifting motor is controlled according to the preset speed parameter of 0.5 mm per second. The lifting displacement of the glass substrate is monitored in real time by a high-precision grating ruler, and 10 displacement data points are collected per millimeter. According to the real-time position data of the glass substrate, a PID control algorithm is used to dynamically adjust the lifting speed of the automatic lifting device to ensure that the lifting speed of the glass substrate is constant at 0.5±0.05 mm per second.

[0045] Step 4: In the second rough soaking, the glass substrate is placed in the second soaking KOH solution pool for soaking, the soaking time is 1500s, the soaking temperature is 23°-27°, and the glass substrate is shaken up and down 55-65 times / min to roughen the glass substrate. At the same time, the cleaned glass substrate is dried by a hot air drying device to ensure that there is no residual moisture on the surface of the glass substrate.

[0046] After the surface of the glass substrate was roughened, it was scanned and observed by an atomic force microscope with a scanning range of 5 μm×5 μm to obtain the rough surface data of the glass substrate, and the average deviation value of the surface roughness and the pit density were calculated by an image analysis algorithm.

[0047] Specifically, in this embodiment, an atomic force microscope is used to obtain a height data matrix of the surface of the glass substrate; according to the obtained height data matrix, the surface morphology image is segmented by an image segmentation algorithm to extract pit areas and flat areas; the segmented pit areas are marked by a connected domain analysis algorithm, the number of pits is counted, and the pit density is obtained; according to the marked pit areas, the depth, diameter and other geometric parameters of each pit are calculated to obtain the pit morphology characteristic distribution; the height data of the flat area is statistically analyzed, the arithmetic mean deviation of the height distribution is calculated, and the surface roughness value is obtained; the calculated pit density and surface roughness value are compared with the preset threshold value, and if the pit density and roughness meet the requirements, it is judged that the surface treatment of the glass substrate is qualified; if the pit density or roughness exceeds the preset range, it returns to the second rough immersion for re-roughening, and the treated glass substrate surface is tested online to monitor the surface quality in real time to ensure stability and consistency between batches.

[0048] Exemplarily, an atomic force microscope with a scanning range of 5 microns × 5 microns is used to scan the surface of the glass substrate to obtain a 512 × 512 height data matrix. The surface morphology image is binarized using the Otsu threshold segmentation algorithm to extract the pit area and the flat area. The pit area is marked with an 8-neighborhood connected domain, the number of marked areas is counted, the pit density per square millimeter is obtained, the maximum depth and equivalent diameter of each pit area are calculated, the pit size distribution histogram is obtained, and the arithmetic mean deviation Ra is calculated for the height data of the flat area, and the surface roughness is obtained to be 80 nanometers. The pit density and roughness are compared with the preset thresholds of 100 / square millimeter and 100 nanometers to determine whether the quality requirements are met. If they exceed the range, the potassium hydroxide concentration is adjusted from 25% to 30%, the ultrasonic power is adjusted from 50 watts / square centimeter to 60 watts / square centimeter, and the processing time is extended from 25 minutes to 30 minutes according to the deviation percentage. The optimized parameters are passed to the automatic liquid dispensing system and the ultrasonic generator to process the next batch of glass substrates. An industrial camera with a resolution of 1 micron is used to continuously capture images of the glass substrate surface, and a surface defect recognition algorithm is used to detect pits and scratch defects in real time. The batch is considered qualified when the defect density is less than 80 per square millimeter for five consecutive pieces.

[0049] The specific implementation process of this embodiment is: after the glass substrate is processed through steps one, two and three, it is roughened through step four.

[0050] In this embodiment, step 4: the second rough soaking specifically includes the following steps:

[0051] S401, preparing a mixed KOH solution, firstly, according to the type and concentration data of metal impurities on the surface of the glass substrate, such as iron ion concentration of 0.02 mol / L and copper ion concentration of 0.01 mol / L, a 25% mass fraction KOH solution is prepared by stoichiometric ratio calculation, nano-silicon dioxide particles with a particle size of 20 nm and a surface area of ​​200 m2 / g are added, and dispersed by 40 kHz ultrasonic wave for 5 minutes to obtain a mixed KOH solution;

[0052] S402, heating, heating the mixed KOH solution to 85°C by a precision temperature control system, monitoring the pH value of the mixed KOH solution in real time by a high-precision pH meter, and adjusting the pH value to 13.5±0.1 by a PID control algorithm;

[0053] S403, stirring and mixing, immersing the glass substrate in a mixed KOH solution with a concentration of 25%, starting a timer, and uniformly mixing the mixed KOH solution using an ultrasonic wave with a power density of 50 W / cm2 and a stirrer with a rotation speed of 200 rpm;

[0054] S404, detection, the high-speed camera system monitors the size distribution of cavitation bubbles in real time, and if the average diameter reaches 50 μm, the frequency of the ultrasonic generator is adjusted to 60 kHz; the in-situ spectrometer monitors the silicon ion concentration, and when it reaches 0.5 mol / L, the glass substrate is lifted at a speed of 0.5 mm / s, thereby taking the glass substrate out of the second KOH solution immersion pool;

[0055] Secondly, the atomic force microscope is used to scan the glass substrate in a range of 5μm×5μm to obtain morphological data, and the image analysis algorithm is used to calculate the arithmetic mean deviation of the roughness and the pit density. If the deviation is <100nm and the pit density meets the requirements, otherwise, the process parameters are automatically optimized according to the deviation and pit density values, and the mixed KOH solution is adjusted to 30%, the ultrasonic power to 60W / cm2, and the time is extended by 10%, and the process is reprocessed to meet the roughness requirements.

[0056] The glass substrate after the secondary roughening treatment is taken out and placed in the second water tank for multiple rinses to remove the KOH solution and roughening particles remaining on the surface of the glass substrate; specifically, the first and second rinses are performed by overflow and spray cleaning. The detailed steps are ultrapure water overflow for 100 seconds, fast drain and spray for 80 seconds, and this step is repeated 10 times to rinse the small-sized roughening particles remaining on the surface for the second time;

[0057] The rinsed glass substrate was placed in a holding tank containing isopropyl alcohol (IPA dry), and the glass substrate was dried by Marangoni effect for 1100 seconds to complete the roughening of the surface of the glass substrate.

[0058] Specifically, the beneficial effect of this embodiment is that 4% HCL is first used to effectively remove metal particle impurities on the glass substrate to avoid the risk of metal contamination short circuit on the glass substrate, and the glass substrate is pre-roughened and immersed in a 4.3% first immersion KOH solution pool, and then the mixed KOH solution is used to further etch the surface of the glass substrate to roughen the surface of the glass substrate, thereby ensuring the tightness of the next mass transfer and pressing process and improving the roughening effect. Compared with the plasma dry surface roughening process, the wet surface roughening method reduces the process flow, saves production costs, and greatly improves manufacturing efficiency.

[0059] In summary, the difference between this embodiment and the prior art is that: an ultrasonic generator is used to uniformly diffuse the KOH solution in the second KOH solution pool, thereby improving the contact uniformity between the solution and the surface of the glass substrate; at the same time, the KOH solution is stirred by a stirring device, so that the KOH solution in the second KOH solution pool can uniformly etch the glass substrate, and the uniformity and stability of the KOH solution in the second KOH solution pool can be further controlled, thereby improving the etching efficiency and quality of the roughening of the glass substrate; and the ultrasonic generator is adjusted by real-time monitoring of the cavitation bubble size distribution and silicon ion concentration in the KOH solution in the second KOH solution pool, so that the mixed KOH solution can have a more accurate and uniform roughening effect on the glass substrate through ultrasound; and the glass substrate is scanned by an atomic force microscope to obtain morphology data, and the image analysis algorithm is used to calculate the roughness arithmetic mean deviation value and the pit density, so as to avoid excessive or insufficient roughening, thereby improving the quality and consistency of the roughening of the glass substrate and enhancing the efficiency and quality of the roughening.

[0060] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. Although the present invention is disclosed as a preferred embodiment as above, it is not used to limit the present invention. Any technician familiar with the profession can make some changes or modifications to equivalent embodiments of equivalent changes by using the technical contents disclosed above without departing from the scope of the technical solution of the present invention. However, any simple modification, equivalent changes and modifications made to the above embodiments according to the technology of the present invention are within the scope of the technical solution of the present invention without departing from the content of the technical solution of the present invention.

Claims

1. A method for roughening the surface of a glass substrate, characterized in that: The roughening method comprises the following steps: Step 1: Soaking to remove impurities, soaking the glass substrate in a HCL solution pool of a preset concentration to remove metal residues on the surface of the glass substrate; Step 2: Rinse, take out the glass substrate after being immersed in the HCL solution pool, place it in the first water tank, and perform multiple cycles of rinsing to remove metal ions and particles attached to the surface of the glass substrate; Step 3: First pre-roughening soaking, soaking the rinsed glass substrate in a first soaking KOH solution pool for treatment, and pre-roughening the surface of the glass substrate; Step 4: Second rough soaking, taking out the glass substrate soaked in the first KOH solution pool, and placing the glass substrate in the second KOH solution pool for soaking, performing a secondary roughening treatment on the surface of the glass substrate, using an ultrasonic generator to evenly diffuse the KOH solution, and stirring the KOH solution by a stirring device, by real-time monitoring the cavitation bubble size distribution in the KOH solution and the silicon ion concentration in the KOH solution, adjusting the ultrasonic generator parameters according to the monitoring results, and taking the glass substrate out of the KOH solution; Step 5: cleaning, taking out the glass substrate after the secondary roughening treatment, placing it in a second water tank for multiple rinses to remove the KOH solution and roughening particles remaining on the surface of the glass substrate; Step 6: Drying: placing the rinsed glass substrate in a containing tank containing isopropyl alcohol, and performing a drying process on the glass substrate through the Marangoni effect to complete the roughening of the surface of the glass substrate.

2. The method for roughening the surface of a glass substrate according to claim 1, characterized in that: In the step 1, the glass substrate is immersed in a HCL solution pool with a HCL concentration of 3%-5% for 950s-1050s and a soaking temperature of 23°-27°, and the glass substrate is placed in the HCL solution pool and swayed up and down 55-65 times / min.

3. The method for roughening the surface of a glass substrate according to claim 1, characterized in that: In the step 3, the glass substrate rinsed in the step 2 is taken out from the first water tank, and is placed in a first immersion KOH solution pool containing a KOH concentration of 4%-5% for immersion, the immersion time is 1480s-1520s, the immersion temperature is 23°-27°, and the glass substrate is placed in the first immersion KOH solution pool and shaken up and down 55-65 times / min to neutralize the solution on the surface of the glass substrate, so that the glass substrate is pre-roughened.

4. The method for roughening the surface of a glass substrate according to claim 1, characterized in that: In the step 4, a KOH solution in a second KOH solution immersion pool is prepared by using a KOH solution with a mass percentage of 20%-30%, adding nano-silicon dioxide particles with a particle size of 20nm to the KOH solution in the second immersion pool, and uniformly dispersing the KOH solution through an ultrasonic generator to obtain a uniform mixed KOH solution.

5. The method for roughening the surface of a glass substrate according to claim 4, characterized in that: The mixed KOH solution is heated to 85° by a heating device, and the pH value of the mixed KOH solution is monitored in real time by a pH meter, and the pH value of the mixed KOH solution is adjusted to 13.5±0.1 according to the monitored pH value.

6. The method for roughening the surface of a glass substrate according to claim 5, characterized in that: The mixed KOH solution is uniformly diffused by an ultrasonic generator with a power density of 50 W / cm2, and is stirred by a micro-stirrer with a rotation speed of 200 rpm. A sound intensity sensor is set to monitor the sound intensity change in the mixed KOH solution in real time, and a high-speed camera system is used to detect cavitation bubbles in the mixed KOH solution. The ultrasonic power output is adjusted according to the sound intensity data, and the duration and frequency of the ultrasonic generator are adjusted and controlled.

7. A method for roughening the surface of a glass substrate according to claim 6, characterized in that: The glass substrate is lifted and lowered in the second KOH solution immersion tank by a lifting device, and the concentration change of silicon ions in the mixed KOH solution is monitored in real time by an in-situ spectrum analyzer, and the glass substrate is lifted out of the solution by the lifting device.

8. A method for roughening the surface of a glass substrate according to any one of claims 1 to 7, characterized in that: In the second rough soaking of step 4, the glass substrate is placed in the second soaking KOH solution pool for soaking, the soaking time is 1480s-1520s, the soaking temperature is 23°-27°, and the glass substrate is shaken up and down 55-65 times / min to roughen the glass substrate.

9. A method for roughening the surface of a glass substrate according to any one of claims 1 to 7, characterized in that: The cleaning in step five includes a first cleaning and a second cleaning. The first cleaning and the second cleaning and the rinsing in step two are all performed by overflow cleaning and spray cleaning. At the same time, the cleaned glass substrate is dried by a hot air drying device to ensure that there is no residual moisture on the surface of the glass substrate.

10. The method for roughening the surface of a glass substrate according to claim 9, characterized in that: After the surface of the glass substrate is roughened, it is scanned and observed by an atomic force microscope with a scanning range of 5 μm×5 μm to obtain rough surface data of the glass substrate, and the surface roughness average deviation value and etch pit density are calculated by an image analysis algorithm.

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