Large-area particle flow additive and subtractive material uniformity control method

Abstract

The invention discloses a large-area particle flow additive and subtractive material uniformity control method which comprises the following steps: adjusting the relative positions of a particle flow generation source, a particle flow mechanical regulation and control device, a particle flow gas flow field regulation and control device and a substrate clamping device in a vacuum chamber according to the flow field advancing direction of a particle flow in a vacuum environment; loading the substrate onto a substrate clamping device; pumping air to form a vacuum environment; starting the substrate clamping device to perform autorotation or planetary motion; the particle flow gas flow field regulation and control device is filled with gas through a gas guide pipe; starting a particle flow mechanical regulation and control device; starting a particle flow generating source, and carrying out additive and subtractive treatment on the surface of the substrate; and after additive and subtractive material treatment on the surface of the substrate is completed, the uniformity effect of additive and subtractive materials is detected through a sampling method, and the substrate with the additive and subtractive material effect reaching the standard is obtained. Based on the interaction principle between the particle flow and the gas flow field, the microcosmic attribute uniformity, the element performance and the qualified rate of the additive and subtractive material effect of the large-aperture optical element are improved.

Description

Technical Field

[0001] The present invention relates to the field of advanced optical manufacturing technology, and more particularly to a method for controlling uniformity of large-area particle flow addition and subtraction. Background Art

[0002] Surface additive and subtractive technology based on the interaction between particle flow and substrate surface (or substrate surface) is an important technical approach for extreme manufacturing of large-area surfaces and occupies an important technical position in the field of advanced optical manufacturing.

[0003] At present, limiting the action area of ​​particle flow on the substrate surface by mechanical shielding is the main method to control the thickness distribution (such as thickness uniformity, etc.) of additive (or subtractive) materials. However, such a method is limited to controlling the uniformity of macroscopic properties such as thickness, but cannot control the spatial distribution uniformity of the microscopic properties (such as refractive index, density, surface roughness, etc.) of additive (or subtractive) materials.

[0004] Taking electron beam evaporation coating in additive manufacturing technology as an example, the particle flow is the vapor flow field of the film-forming material. By designing a suitable film thickness shielding baffle to change the spatial distribution of the vapor flow field, the thickness non-uniformity can be achieved on a planar component with a diameter of up to 0.6 meters. The level of less than 1% can be achieved, but the distribution of the microscopic properties of the film cannot be effectively controlled: for example, the refractive index (@λ=1053nm) of the silicon dioxide film on a planar component with a diameter of 0.6 meters can be reduced from 1.45 at the center of the component (corresponding to a larger density of microscopic properties) to 1.44 at the edge of 0.6 meters (corresponding to a smaller density of microscopic properties), and the refractive index non-uniformity (Δn) is about 0.7%; but even in the case of relatively good refractive index uniformity, such as Δn=0.3%, it still cannot meet some extreme film-forming requirements.

[0005] Taking ion beam polishing in subtractive manufacturing technology as an example, the particle flow acting on the substrate surface will still have an energy angular distribution with poor uniformity even after being partially shielded by mechanical parts. This will cause a large difference in surface roughness (Rq) between the center and edge of the substrate surface after the particle flow bombards the substrate surface (can reach more than 1nm).

[0006] In principle, the molecular dynamics of the particle flow near the substrate surface is crucial to the microscopic properties of the additive (or subtractive) effect. However, it is difficult to achieve uniformity control of additive and subtractive materials at the microscopic structural level through traditional macroscopic mechanical parts such as shielding baffles, making it difficult to push optical component manufacturing to further development to the performance limit.

[0007] Therefore, achieving uniformity control of added and subtracted materials at the microstructural level is an issue that technical personnel in this field urgently need to solve. Summary of the invention

[0008] In view of this, the present invention provides a method for controlling uniformity of large-area particle flow additive and subtractive materials, which solves the technical problem that it is difficult to effectively control the spatial uniformity of microscopic properties of additive and subtractive materials in the current extreme manufacturing of large-aperture optical elements.

[0009] In order to achieve the above object, the present invention adopts the following technical solution:

[0010] A method for controlling uniformity of large-area particle flow addition and subtraction, comprising the following steps:

[0011] S1. According to the flow field travel direction of the particle flow in the vacuum environment, adjust the relative positions of the particle flow generating source, the particle flow mechanical control device, the particle flow gas flow field control device and the substrate clamping device in the vacuum chamber;

[0012] S2, loading the cleaned substrate onto the substrate clamping device;

[0013] S3, pumping the air in the vacuum chamber to form a vacuum environment;

[0014] S4, starting the substrate clamping device to perform rotation or planetary motion;

[0015] S5, filling the particle flow gas flow field regulating device with gas through a gas conduit;

[0016] S6, starting the particle flow mechanical control device;

[0017] S7, starting the particle flow generating source to perform material addition and subtraction processing on the surface of the substrate;

[0018] S8. After completing the additive and subtractive material processing on the surface of the substrate, the uniformity effect of the additive and subtractive material is tested by a sampling method to obtain a substrate with an additive and subtractive material effect that meets the standard.

[0019] Furthermore, the method of adjusting the relative position in step S1 is: coaxially arranging the particle flow generating source, the particle flow gas flow field regulating device, the particle flow mechanical regulating device and the substrate clamping device in sequence; wherein the positions of the particle flow gas flow field regulating device and the particle flow mechanical regulating device can be interchanged.

[0020] Furthermore, the coaxial arrangement is specifically: the geometric center formed by the particle flow generating area of ​​the particle flow generating source, the geometric center of the through hole arrangement of the particle flow mechanical control device, and the geometric center of the air outlet arrangement of the particle flow gas flow field control device are arranged in a straight line; and when the substrate is mounted on the substrate clamping device, the geometric center of the substrate is located on the straight line.

[0021] Furthermore, the cleaning method in step S2 includes mechanical cleaning and chemical cleaning;

[0022] Wherein, the mechanical cleaning is specifically:

[0023] Blowing away dust, fibers and coarse particles on the surface of the substrate with compressed air;

[0024] Wipe the surface of the substrate with a dust-free cloth or an optical cleaning cloth to remove contaminants;

[0025] The substrate is placed in an ultrasonic cleaning tank containing a cleaning solution, and the ultrasonic cleaning time is greater than or equal to 15 minutes;

[0026] The chemical cleaning is specifically:

[0027] Use anhydrous ethanol, acetone, and banana water organic solvents to dissolve and remove organic pollutants, then rinse with deionized water and blow dry with compressed air.

[0028] Furthermore, in step S3, the vacuum environment pressure value is lower than 10 4 Pa.

[0029] Furthermore, in step S4, the rotation period of the substrate clamping device or the revolution period of the planetary motion is less than or equal to 5 minutes.

[0030] Furthermore, the gas in step S5 is a reaction gas or an inert gas, and the gas flow rate is greater than or equal to 0.1 sccm.

[0031] Furthermore, in step S7, the particle energy of the particle flow generated by the particle flow generation source is in the range of 0.1 eV to 10000 eV.

[0032] Furthermore, the step S8 specifically includes:

[0033] Sequentially shut down the particle flow generation source, the gas introduction of the particle flow gas flow field control device, the particle flow mechanical control device, and the rotation or planetary motion of the substrate clamping device; and restore the vacuum chamber environment to the atmospheric environment state;

[0034] A number of sampling points or sampling areas on the substrate surface are selected for measurement and characterization, and then the uniformity of the additive and subtractive materials is evaluated based on the measurement results.

[0035] It can be seen from the above technical solutions that, compared with the prior art, the present invention discloses a method for controlling the uniformity of large-area particle flow additive and subtractive materials. Based on the interaction principle between particle flow and gas flow field, the particle flow regulation purpose at the micro level is achieved, and the regulation and correction of the macroscopic properties of additive and subtractive materials are not affected. The process has strong robustness and is conducive to the optimization of additive and subtractive processes. It does not require a complex mechanical structure, improves the uniformity of microscopic properties, component performance and qualified rate of the additive and subtractive effects of large-aperture optical components, improves the yield and consistency of batch additive and subtractive processing of small-aperture components, and achieves the purpose of reducing costs and increasing efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0037] Figure 1 A flow chart of a large-area particle flow material uniformity control method provided by the present invention.

[0038] Figure 2 A schematic diagram of a large-area particle flow material addition and subtraction uniformity control method provided by the present invention.

[0039] Figure 3 This is a schematic diagram of the structure of the particle flow generating source provided by the present invention.

[0040] Figure 4 This is a schematic diagram of the structure of the particle flow mechanical control device provided by the present invention.

[0041] Figure 5 This is a schematic diagram of the structure of the particle flow gas flow field regulating device provided by the present invention.

[0042] Figure 6 This is a schematic diagram of the sampling point distribution provided by the present invention. DETAILED DESCRIPTION

[0043] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0044] The embodiment of the present invention discloses a method for controlling uniformity of large-area particle flow addition and subtraction. Figure 1 As shown, the following steps are included:

[0045] S1. According to the flow field travel direction of the particle flow in the vacuum environment, adjust the relative positions of the particle flow generating source, the particle flow mechanical control device, the particle flow gas flow field control device and the substrate clamping device in the vacuum chamber;

[0046] S2, loading the cleaned substrate onto the substrate clamping device;

[0047] S3, pumping the air in the vacuum chamber to form a vacuum environment;

[0048] S4, starting the substrate clamping device to perform rotation or planetary motion;

[0049] S5, filling the particle flow gas flow field regulating device with gas through a gas conduit;

[0050] S6, starting the particle flow mechanical control device;

[0051] S7, starting the particle flow generating source to perform material addition and subtraction processing on the surface of the substrate;

[0052] S8. After completing the additive and subtractive material processing on the surface of the substrate, the uniformity effect of the additive and subtractive material is tested by a sampling method to obtain a substrate with an additive and subtractive material effect that meets the standard.

[0053] In one embodiment, referring to Figure 2 As shown, the devices required include: a particle flow generating source, a particle flow mechanical regulating device, a particle flow gas flow field regulating device and a substrate clamping device;

[0054] The particle flow source is referenced Figure 3 As shown, it includes but is not limited to resistive thermal evaporation source, electron beam evaporation source, Hall ion source, Kaufman ion source, radio frequency ion source, neutron source, magnetron sputtering source. The particle flow generated by the particle flow generating source can be composed of charged or neutral material particles, including but not limited to protons, neutrons, atoms, molecules, ions, atomic clusters, ion clusters, and molecular clusters. Whether the particle flow generated by the particle flow generating source has an additive or subtractive effect on the substrate is determined by the particle energy when the particle flow reaches the substrate, and the particle energy falls in the range of 0.1eV to 10000eV.

[0055] Particle flow mechanical control device reference Figure 4As shown, the through holes through which the particle flow can flow also have shielding parts that prevent the particle flow from passing through. The through holes have no special shape, number, or arrangement restrictions. The through holes are preferably in a regular geometric structure; preferably, through holes with a regular geometric structure include, but are not limited to, circular, elliptical, square, and regular hexagonal through holes; preferably, multiple through holes are arranged in a regular manner, including, but not limited to, linear arrays, square arrays, and circular arrays. The particle flow mechanical control device has a certain particle flow shielding effect, but does not completely shield the particle flow. The ratio of the particle flow flowing through the through hole to the total particle flow is called the flow ratio, especially when the above flow ratio is 100%, it means that the particle flow mechanical control device is not used. The particle flow mechanical control device can be designed to have the function of electrically controlling the flow ratio. The optional materials for the shielding part of the particle flow mechanical control device include, but are not limited to, stainless steel and aluminum alloy.

[0056] Reference Figure 5 As shown, the particle flow gas flow field control device connected to the gas conduit is arranged with air outlets, and the air outlets have no special shape, number and arrangement restrictions. Preferably, the air outlets have regular geometric structures, including but not limited to circular, elliptical, square, and regular hexagonal shapes; preferably, multiple air outlets are arranged in a regular manner, including but not limited to linear arrays, square arrays, and circular arrays. The gas introduced by the gas conduit flows out from the air outlets, and the outflowing gas can be a charged or neutral gas. The optional materials for manufacturing the particle flow gas flow field control device include but are not limited to stainless steel and aluminum alloy.

[0057] The substrate clamping device not only clamps the substrate but also has the function of rotating or planetary motion with the substrate, which plays an auxiliary role in the uniform control of the additive and subtractive material effects; there is no specific restriction on the substrate material, including but not limited to fused quartz, microcrystalline glass, K9 glass, single crystal silicon, silicon carbide, aluminum, aluminum alloy, etc.

[0058] No complicated configuration is required, especially the particle flow mechanical control device and the gas flow field control device do not require complicated and precise mechanical structure, and the cost is low.

[0059] In step S1 of one embodiment, the relative positions of the particle flow generating source, the particle flow mechanical regulating device, the particle flow gas flow field regulating device and the substrate clamping device in the vacuum chamber are adjusted as follows:

[0060] Along the traveling direction of the particle flow in a vacuum environment, the particle flow mechanical control device, the particle flow gas flow field control device, and the substrate clamping device are located behind the particle flow generating source; the substrate clamping device is located behind the particle flow mechanical control device and the particle flow gas flow field control device; and the particle flow mechanical control device can be located before or after the particle flow gas flow field control device.

[0061] In one embodiment, the preferred relative position is that the particle flow generating source, the particle flow mechanical control device, and the particle flow gas flow field control device are coaxially arranged along the direction of travel of the particle flow in a vacuum environment. The coaxial arrangement means that the geometric center of the particle flow generating area on the particle flow generating source, the geometric center of the through hole arrangement on the particle flow mechanical control device, and the geometric center of the air outlet arrangement of the particle flow gas flow field control device are arranged in a straight line, and when the substrate is mounted on the substrate clamping device, the geometric center of the substrate can also fall on this straight line.

[0062] In step S2 of one embodiment, the specific method of mechanically cleaning the substrate is: first, use compressed air to blow away dust, fibers and coarse particles on the surface of the substrate; second, use a dust-free cloth or a special optical cleaning cloth (which will not leave scratches or residues on the surface of the substrate) to gently wipe the surface of the substrate to remove fingerprints, fine particles and other contaminants; third, put the substrate into an ultrasonic cleaning tank containing a cleaning solution, and use ultrasonic cleaning technology to deeply clean the surface of the substrate, and the ultrasonic cleaning time is not less than 15 minutes. The specific method of chemically cleaning the substrate is: use anhydrous ethanol, acetone, banana water organic solvents to dissolve and remove organic contaminants such as grease and residual glue, and finally rinse with deionized water and blow dry with compressed air. Chemical cleaning is generally combined with mechanical cleaning to achieve better cleaning results.

[0063] In step S3 of one embodiment, the vacuum environment pressure value reached is lower than 10 4 Pa, and the substrate can be heated by increasing the temperature in the vacuum chamber.

[0064] In steps S4-S7 of one embodiment, the rotation period of the substrate with the substrate clamping device or the revolution period of the planetary motion is no more than 5 minutes.

[0065] The particle flow gas flow field control device is connected to a gas conduit, and the gas flow in the gas conduit is controlled by a gas mass flow meter. The gas can be a reaction gas or an inert gas, and the gas flow is not less than 0.1 sccm.

[0066] The particle flow mechanical control device has a certain particle flow shielding effect, but does not completely shield the particle flow.

[0067] The particle flow generating region of the particle flow generating source has a certain geometric shape, which can be adjusted by the composition structure and working conditions of the particle flow generating source, and a regular geometric shape is preferred.

[0068] In step S8 of one embodiment, after completing the additive and subtractive material processing process on the substrate surface, the particle flow generating source, the gas introduction of the particle flow gas flow field regulating device, the particle flow mechanical regulating device, and the rotation or planetary motion of the substrate clamping device are turned off in sequence; and the vacuum chamber environment is restored to the atmospheric environment state, and the substrate after the additive and subtractive material processing is taken out.

[0069] Afterwards, the sampling method is used to check the uniformity effect of the additive and subtractive materials, that is, several sampling points or sampling areas on the substrate surface are selected for measurement and characterization, and then the uniformity of the additive and subtractive materials is evaluated based on the measurement results, so as to make necessary optimization of the specific equipment and process conditions of the particle flow additive and subtractive material uniformity control method.

[0070] The fineness of sampling is determined by the subjective sampling interval or the mechanical movement step of the measurement characterization instrument, imaging pixel density, etc.

[0071] The measurement and characterization methods used to test the uniformity of the additive and subtractive materials include, but are not limited to, interferometer, ellipsometer, atomic force microscope, and Raman spectrometer.

[0072] The principle is different from the regulation of particle flow by macroscopic mechanical components. The present invention is based on the principle of interaction between particle flow and gas flow field to achieve the purpose of particle flow regulation at the micro level. Moreover, a significant effect of the present invention is that it does not affect the regulation and correction of the macroscopic properties (such as thickness) of the additive and subtractive materials. The process is highly robust and is very conducive to the optimization of the additive and subtractive material process.

[0073] The control method of the uniformity of large-area particle flow additive and subtractive materials of the present invention can solve the technical problem that it is difficult to effectively control the spatial uniformity of the microscopic properties of additive and subtractive materials in the current extreme manufacturing of large-aperture optical elements, thereby improving the uniformity of the microscopic properties, component performance and qualified rate of the additive and subtractive effects of large-aperture optical elements, and improving the yield and consistency of batch additive and subtractive material processing of small-aperture elements, thereby achieving the purpose of reducing costs and increasing efficiency.

[0074] In addition, the present invention is applicable to various additive or subtractive technologies in advanced optical manufacturing, including but not limited to evaporation coating technology, sputtering coating technology, and ion beam polishing technology, and has a wide range of applications.

[0075] Next, in conjunction with the following embodiments, a large-area particle flow material uniformity control method proposed by the present invention is further described.

[0076] Example 1

[0077] Step S1: An electron beam evaporation source is used as a particle flow generating source. The particle flow is silicon dioxide vapor generated by high-energy electron beam heating silicon dioxide particles. The particle flow generating area is a circular area with a diameter of about 2 cm. The particle flow mechanical control device is a stainless steel shielding plate with a circular through hole with a diameter of 14 cm in the middle. The plate thickness is 2 mm. The ratio of the area of ​​the through hole part to the area of ​​the shielding part is about 1:6. The vertical distance from the particle flow mechanical control device to the particle flow generating area is L3=15 cm. The vertical distance from the geometric center of the particle flow gas flow field control device outlet hole arrangement to the particle flow mechanical control device is L2=40 cm, and the vertical distance to the substrate is L1=60 cm. The center of the particle flow generating area, the center of the through hole of the particle flow mechanical control device, and the geometric center of the particle flow gas flow field control device outlet hole arrangement are all on a vertical axis, and when the substrate is mounted on the substrate clamping device, the geometric center of the substrate can also fall on this vertical axis.

[0078] Step S2: Place a circular fused quartz substrate with a diameter of 620 mm and a thickness of 20 mm vertically. First, blow away the dust, fibers and coarse particles on the surface of the substrate with compressed air; second, repeatedly and gently wipe the surface of the substrate with a dust-free cloth dipped in anhydrous ethanol, acetone, and banana water to remove contaminants such as fingerprints and fine particles; third, immerse the substrate in an ultrasonic cleaning tank containing a cleaning solution, and use ultrasonic cleaning technology to deeply clean the surface of the substrate. The ultrasonic cleaning time is 45 minutes. Finally, rinse it with deionized water and blow it dry with compressed air.

[0079] Step S3: Stably mount the substrate cleaned in step S2 on the substrate clamping device in the vacuum chamber, close the vacuum chamber door, start the vacuum pump system, and when the vacuum degree in the vacuum chamber reaches 1×10 -3 Pa, the substrate was gradually heated to 100 °C within 120 min.

[0080] Step S4: Turn on the planetary motion function of the substrate clamping device and set the revolution period of the planetary motion to 4s.

[0081] Step S5: Turn on the gas mass flow meter on the gas conduit of the particle flow gas flow field regulating device, fill the particle flow gas flow field regulating device with oxygen having a purity of 99.999% and set the oxygen flow rate to 30 sccm.

[0082] Step S6: The particle flow mechanical regulating device of this embodiment is a shielding plate with a through hole in the middle, and does not need to be electrically controlled to open or close, so it is always in the open state.

[0083] Step S7: The particle flow generating source of this embodiment is an electron beam evaporation source, the evaporated material is silicon dioxide particles with a purity of 99.999%, the electron beam current is about 50 mA, and the electron beam irradiates a circular area with a diameter of about 2 cm on the surface of the silicon dioxide material.

[0084] Step S8: After completing the silicon dioxide additive coating on the surface of the fused quartz substrate, turn off the particle flow generating source, the gas introduction of the particle flow gas flow field regulating device, and the planetary motion of the substrate clamping device in sequence, and after the interior of the vacuum chamber is naturally cooled to below 30°C, open the vent valve on the vacuum chamber, fill in air to balance the air pressure inside the vacuum chamber with the atmospheric environment, and open the vacuum chamber door to take out the substrate.

[0085] Reference Figure 6 As shown, the effect of silicon dioxide additive coating is evaluated by sampling at equal intervals along the radial direction of the substrate. There are 13 sampling points, and the interval between adjacent sampling points is 50mm. The film thickness and refractive index (@λ=1000nm) of each sampling point are measured by ellipsometer, where the film thickness distribution characteristics of the sampling points reflect the uniformity of the macroscopic properties of the additive effect, and the refractive index distribution characteristics of the sampling points reflect the uniformity of the microscopic properties of the additive effect. For each sampling point, the film thickness and refractive index results measured by ellipsometer are the average values ​​obtained by repeated measurements at fixed points 10 times. For example, the average value of the film thickness of the i-th sampling point after 10 repeated measurements is recorded as di, and the average value of the refractive index of the i-th sampling point after 10 repeated measurements is recorded as ni. The average values ​​of di and ni of all sampling points are recorded as Where N is the total number of sampling points.

[0086] There are two ways to evaluate the uniformity of silicon dioxide additives: Method 1 uses peak-to-valley value PV evaluation, sampling point thickness PV value PV d =max(di-dj), refractive index PV value of sampling point PV n =max(ni-nj), where i, j = 1...N; the second method is the ratio of the standard deviation of the measurement results of the sampling points to the average value, recorded as Δ, for thickness Thickness standard deviation For the refractive index Refractive index standard deviation

[0087] The specific thickness and refractive index data of the sampling points obtained in this embodiment are shown in Table 1:

[0088] Sampling point number Refractive index ni at sampling point Sampling point thickness di(nm) 0 1.4452 212.56 1 1.4453 211.97 1’ 1.4454 211.73 2 1.4451 210.46 2’ 1.4448 210.56 3 1.4451 207.92 3’ 1.4450 208.45 4 1.4455 204.73 4’ 1.4448 204.82 5 1.4453 200.75 5’ 1.4450 200.53 6 1.4448 195.03 6’ 1.4449 195.29

[0089] Table 1 Thickness and refractive index distribution of silicon dioxide film at sampling points in Example 1 PV d =17.53nm,PV n＝0.0007， <d><h2 style=";text-align:left;direction:ltr">=205.75nm,<h2 style=";text-align:left;direction:ltr"> <n>=1.4451,σ n =0.0002,σ d =6.17nm,Δ d =3.0%, Δ n =0.014%. The results show that the uniformity of the refractive index microstructure properties obtained by the control method of the present invention is more than ten times higher than that obtained by the traditional method.

[0090] The present invention is based on the principle of interaction between particle flow and gas flow field, and achieves the purpose of particle flow regulation at the micro level. In addition, a significant effect of the present invention is that it does not affect the regulation and correction of the macroscopic properties (such as thickness) of the additive (subtractive) material. The process has strong robustness and is very beneficial to the optimization of the additive (subtractive) material process.

[0091] Example 2

[0092] The experimental process of Example 2 is roughly the same as that of Example 1, except that Example 2 optimizes the uniformity of silicon dioxide thickness distribution. The specific thickness and refractive index data of the sampling points obtained in this example are shown in Table 2:

[0093] Sampling point number Refractive index ni at sampling point Sampling point thickness di(nm) 0 1.4535 94.02 1 1.4536 93.46 1’ 1.4538 93.58 2 1.4538 93.48 2’ 1.4538 93.56 3 1.4532 93.60 3’ 1.4537 93.75 4 1.4538 93.86 4’ 1.4534 93.77 5 1.4532 93.60 5’ 1.4532 93.67 6 1.4533 93.46 6’ 1.4539 93.28

[0094] Table 2 Thickness and refractive index distribution results of silicon dioxide film at sampling points in Example 2

[0095] From the data in Table 2, we can get PV d =0.74nm, P Vn =0.0007, <d>=93.62nm, <n>=1.4536,σ n =0.0003,σ d =0.19nm,Δ d =0.2%, Δ n =0.02%. Compared with Example 1, when the silicon dioxide thickness distribution at the sampling point changes greatly, the refractive index at the sampling point changes very little, which shows that the present invention has good process robustness in controlling the uniformity of the microscopic properties of silicon dioxide additive coatings, and will not affect the control of the uniformity of the macroscopic property distribution of the film thickness.

[0096] It can solve the technical problem that it is difficult to effectively control the spatial uniformity of the microscopic properties of additive and subtractive materials in the current extreme manufacturing of large-aperture optical components, thereby improving the uniformity of microscopic properties, component performance and qualified rate of additive and subtractive materials in large-aperture optical components, and improving the yield and consistency of batch additive and subtractive material processing of small-aperture components, while achieving the goal of reducing costs and increasing efficiency.

[0097] In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part.

[0098] The above description of the disclosed embodiments enables one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.< / n> < / d> < / n> < / d>

Claims

1. A method for controlling uniformity of large-area particle flow addition and subtraction, characterized in that: The following steps are involved: S1. According to the flow field travel direction of the particle flow in the vacuum environment, adjust the relative positions of the particle flow generating source, the particle flow mechanical control device, the particle flow gas flow field control device and the substrate clamping device in the vacuum chamber; S2, loading the cleaned substrate onto the substrate clamping device; S3, pumping the air in the vacuum chamber to form a vacuum environment; S4, starting the substrate clamping device to perform rotation or planetary motion; S5, filling the particle flow gas flow field regulating device with gas through a gas conduit; S6, starting the particle flow mechanical control device; S7, starting the particle flow generating source to perform material addition and subtraction processing on the surface of the substrate; S8. After completing the additive and subtractive material processing on the surface of the substrate, the uniformity effect of the additive and subtractive material is tested by a sampling method to obtain a substrate with an additive and subtractive material effect that meets the standard.

2. A large-area particle flow material addition and subtraction uniformity control method as claimed in claim 1, characterized in that: The method of adjusting the relative position in step S1 is: coaxially arranging the particle flow generating source, the particle flow gas flow field regulating device, the particle flow mechanical regulating device and the substrate clamping device in sequence; wherein the positions of the particle flow gas flow field regulating device and the particle flow mechanical regulating device are interchangeable.

3. A large-area particle flow material addition and subtraction uniformity control method as claimed in claim 2, characterized in that: The coaxial arrangement specifically means that the geometric center formed by the particle flow generation area of ​​the particle flow generation source, the geometric center of the through hole arrangement of the particle flow mechanical control device, and the geometric center of the gas outlet hole arrangement of the particle flow gas flow field control device are arranged in a straight line; And when the substrate is mounted on the substrate holding device, the geometric center of the substrate is located on the straight line.

4. A large-area particle flow material addition and subtraction uniformity control method as claimed in claim 1, characterized in that: The cleaning method in step S2 includes mechanical cleaning and chemical cleaning; Wherein, the mechanical cleaning is specifically: Blowing away dust, fibers and coarse particles on the surface of the substrate with compressed air; Wipe the surface of the substrate with a dust-free cloth or an optical cleaning cloth to remove contaminants; The substrate is placed in an ultrasonic cleaning tank containing a cleaning solution, and the ultrasonic cleaning time is greater than or equal to 15 minutes; The chemical cleaning is specifically: Use anhydrous ethanol, acetone, and banana water organic solvents to dissolve and remove organic pollutants, then rinse with deionized water and blow dry with compressed air.

5. A large-area particle flow material addition and subtraction uniformity control method as claimed in claim 1, characterized in that: In step S3, the vacuum environment pressure value is lower than 10 4 Pa.

6. A large-area particle flow material addition and subtraction uniformity control method as claimed in claim 1, characterized in that: In the step S4, the rotation period of the substrate clamping device or the revolution period of the planetary motion is less than or equal to 5 minutes.

7. A large-area particle flow material addition and subtraction uniformity control method as claimed in claim 1, characterized in that: The gas in step S5 is a reaction gas or an inert gas, and the gas flow rate is greater than or equal to 0.1 sccm.

8. A large-area particle flow material addition and subtraction uniformity control method as claimed in claim 1, characterized in that: In the step S7, the particle energy of the particle flow generated by the particle flow generation source is in the range of 0.1 eV to 10000 eV.

9. A method for controlling uniformity of large-area particle flow addition and subtraction as claimed in any one of claims 1 to 8, characterized in that: The step S8 specifically includes: Sequentially shut down the particle flow generation source, the gas introduction of the particle flow gas flow field control device, the particle flow mechanical control device, and the rotation or planetary motion of the substrate clamping device; and restore the vacuum chamber environment to the atmospheric environment state; A number of sampling points or sampling areas on the substrate surface are selected for measurement and characterization, and then the uniformity of the additive and subtractive materials is evaluated based on the measurement results.

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