Annular showerhead and substrate processing apparatus

Abstract

The invention belongs to the technical field of semiconductor manufacturing equipment, and particularly relates to an annular spray head and a substrate processing device.The annular spray head comprises an annular sleeve and N diffusion plates, the annular sleeve comprises an outer cylinder, an inner cylinder and an end plate, the inner cylinder is arranged in the outer cylinder, and the end plate is arranged at one end of the outer cylinder and one end of the inner cylinder; the N diffusion plates are arranged in an annular space formed between the inner cylinder and the outer cylinder, an air inlet hole is formed in the annular sleeve, the air inlet hole is located in the side, close to the end plate, of the first diffusion plate close to the end plate, each diffusion plate is provided with a plurality of exhaust holes surrounding the inner cylinder, and in any two adjacent diffusion plates, the exhaust holes are formed in a staggered mode and are distributed in the direction away from the end plate; the number of the exhaust holes of the diffusion plate is sequentially increased. When the annular spray head is applied to the substrate processing device, process gas sprayed out of the annular spray head flows downwards and is diffused inwards and outwards at the same time, when the process gas flows to the position above the substrate borne by the base, the process gas is diffused into gas evenly distributed on the whole face, and the uniformity of the thickness of a formed film layer is improved.

Description

Technical Field

[0001] The present application belongs to the technical field of semiconductor manufacturing equipment, and specifically relates to an annular nozzle and a substrate processing device. Background Art

[0002] Epitaxial Growth (EPI) is a technology that grows single crystal thin films with the same crystal structure and orientation on a single crystal substrate. During the epitaxial growth process, in order to ensure uniform film thickness, the gas flow field in the reaction chamber needs to be strictly controlled to make the distribution of the reaction gas above the substrate as uniform as possible.

[0003] The existing substrate processing equipment for epitaxial growth film layer includes an air intake device, a reaction chamber and an exhaust device, and the air intake device and the exhaust device are arranged on two opposite sides of the reaction chamber in the lateral direction. The reaction gas introduced by the air intake device includes a middle airflow with a wide distribution and uniform flow rate and an outer airflow with a narrow distribution on both sides of the middle airflow for adjusting the edge flow rate. The distribution of the reaction gas above the substrate is controlled by adjusting the flow rates of the middle airflow and the outer airflow respectively, so that the epitaxial growth rate on the substrate is as uniform as possible.

[0004] Since the middle airflow and the outer airflow are very close, the airflows quickly mix with each other after entering the reaction chamber, making it difficult to control the uniform distribution of the reaction gas above the substrate. For example, if the flow rate of the middle airflow is increased, the flow rate of the outer airflow will also increase due to gas mixing, and the distribution of the reaction gas will become uneven. Summary of the invention

[0005] The purpose of the present application is to provide an annular nozzle and a substrate processing device to improve the problem of uneven distribution of reaction gases and enhance the uniformity of the thickness of epitaxial growth films.

[0006] In order to achieve the above object, the present application provides an annular nozzle, comprising:

[0007] An annular sleeve, comprising an outer cylinder, an inner cylinder and an end plate, wherein the inner cylinder is arranged in the outer cylinder, an annular space is formed between the inner cylinder and the outer cylinder, and the end plate is arranged at one end of the outer cylinder and the inner cylinder, and the end plate connects the outer cylinder and the inner cylinder;

[0008] N diffuser plates are arranged in the annular space, N is greater than or equal to 2, and the N diffuser plates are arranged in sequence and spaced apart in a direction away from the end plate. The diffuser plate closest to the end plate among the N diffuser plates is the first diffuser plate. An air inlet hole is arranged on the annular sleeve, and the air inlet hole is located on a side of the first diffuser plate close to the end plate. Each of the diffuser plates is provided with a plurality of exhaust holes surrounding the inner tube, and in any two adjacent diffuser plates: the exhaust holes are staggered, and the number of exhaust holes of the diffuser plates increases in sequence in a direction away from the end plate.

[0009] Optionally, the nth diffusion plate is provided with n circles of exhaust holes, 1≤n≤N.

[0010] Optionally, in any two adjacent diffusion plates: the exhaust holes are staggered inwardly and outwardly and / or the exhaust holes are staggered in circumferential direction.

[0011] Optionally, the air inlet hole is arranged on the outer cylinder.

[0012] Optionally, the plurality of air inlet holes are evenly spaced along the circumference of the outer cylinder.

[0013] Optionally, the outer cylinder and the inner cylinder are both cylindrical cylinders or both conical cylinders.

[0014] Optionally, the outer cylinder and the inner cylinder are both conical cylinders, the cone angles of the outer cylinder and the inner cylinder are both less than 60 degrees, the diffuser plate is perpendicular to the busbars of the outer cylinder and the busbars of the inner cylinder, the diffuser plate farthest from the end plate among the N diffusers is the Nth diffuser plate, and the Nth diffuser plate is located on the side of the first diffuser plate close to the cone top surface of the conical cylinder.

[0015] The present application also provides a substrate processing device, comprising:

[0016] A reaction chamber, comprising an upper chamber and a lower chamber that are interconnected;

[0017] A base is disposed in the lower chamber, and the base is used to carry a substrate to be processed;

[0018] The annular nozzle is arranged in the upper chamber, the diffusion plate farthest from the end plate among the N diffusion plates is the Nth diffusion plate, and the Nth diffusion plate is located on the side of the first diffusion plate close to the base;

[0019] An air inlet assembly is connected to the air inlet hole of the annular nozzle, and the air inlet assembly is used to introduce process gas.

[0020] Optionally, the reaction chamber further includes a necked portion, which connects the upper chamber and the lower chamber, and outer edges of the orthographic projections of the upper chamber, the lower chamber and the Nth diffusion plate on the base are all located outside the necked portion.

[0021] Optionally, the substrate processing device further includes an upper heating module, which is arranged around the necking portion, and the lower chamber includes a transmissive cavity wall. The upper heating module can emit electromagnetic waves, and the electromagnetic waves can pass through the transmissive cavity wall to heat the substrate.

[0022] Optionally, the substrate processing device further comprises a guide liner connected to the inner wall of the reaction chamber, the guide liner at least covers the inner wall of the necked portion, and the inner surface of the guide liner and the inner wall of the upper chamber form a streamlined inner cavity.

[0023] Optionally, the inner surface of the guide liner is smoothly connected to the inner surface of the upper chamber, and the annular nozzle is located on the side of the connection between the guide liner and the upper chamber away from the lower chamber.

[0024] Optionally, the guide lining is connected to the lower chamber at one end away from the upper chamber, and the substrate processing device also includes an upper heating module, which is arranged around the necking portion and can emit electromagnetic waves, and the electromagnetic waves can pass through the guide lining to heat the substrate.

[0025] Optionally, the substrate processing device further comprises a flow equalizer plate, which is arranged on the neck portion, and has a plurality of adjustment holes arranged on the flow equalizer plate, and the adjustment holes are used to adjust the distribution uniformity of the process gas entering the lower chamber through the flow equalizer plate at the substrate.

[0026] Optionally, the inner surface of the necked portion is smoothly connected to the inner surface of the upper chamber and the inner surface of the lower chamber to form a streamlined inner cavity.

[0027] Optionally, the substrate processing device further comprises a temperature detection module, which is disposed on a side of the upper chamber away from the base, and the orthographic projection of a probe of the temperature detection module on the base is located within the orthographic projection of the inner cylinder of the annular nozzle on the base.

[0028] The annular nozzle and substrate processing device disclosed in the present application have the following beneficial effects:

[0029] In the present application, the annular nozzle includes an annular sleeve and N diffusion plates. The annular sleeve includes an outer cylinder, an inner cylinder and an end plate. The inner cylinder is arranged in the outer cylinder, and an annular space is formed between the inner cylinder and the outer cylinder. The end plate is arranged at one end of the outer cylinder and the inner cylinder. N diffusion plates are arranged in the annular space, and N is greater than or equal to 2. An air inlet is arranged on the annular sleeve, and the air inlet is located on the side of the first diffusion plate close to the end plate close to the end plate. Each diffusion plate is provided with a plurality of exhaust holes surrounding the inner cylinder. In any two adjacent diffusion plates: the exhaust holes are arranged in a staggered manner, and the number of exhaust holes of the diffusion plates increases successively in the direction away from the end plate. When the annular nozzle is applied to a substrate processing device, the process gas ejected by the annular nozzle is distributed in an annular shape. As the process gas flows downward, the process gas will diffuse inward and outward at the same time. When it flows to the top of the substrate supported by the base, the process gas diffuses into a gas uniformly distributed over the entire surface, thereby improving the uniformity of the thickness of the formed film layer.

[0030] Other features and advantages of the present application will become apparent from the following detailed description, or may be learned in part by the practice of the present application.

[0031] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present application, and together with the specification are used to explain the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0033] Figure 1 It is a three-dimensional schematic diagram of the annular nozzle in the embodiment of the present application.

[0034] Figure 2 It is a bottom view schematic diagram of the annular nozzle in the embodiment of the present application.

[0035] Figure 3 It is a cross-sectional schematic diagram of the annular nozzle in the embodiment of the present application.

[0036] Figure 4 It is a structural schematic diagram of a substrate processing device in an embodiment of the present application.

[0037] Figure 5 Schematic diagram of the distribution of process gases from top to bottom in the reaction chamber in the embodiment of the present application.

[0038] Figure 6 It is a cross-sectional schematic diagram of the conical annular nozzle in the embodiment of the present application.

[0039] Figure 7 It is a schematic diagram of the structure of the flow equalizer in the embodiment of the present application.

[0040] Description of reference numerals:

[0041] 100, annular nozzle; 110, annular sleeve; 111, outer cylinder; 1111, air inlet; 112, inner cylinder; 113, end plate; 120, diffuser plate; 121, exhaust hole;

[0042] 200, base; 300, reaction chamber; 310, upper chamber; 320, necking portion; 330, lower chamber; 340, exhaust chamber; 400, air intake assembly; 510, upper heating module; 520, lower heating module; 600, load lock chamber; 700, flow guide liner; 800, flow equalizer; 810, adjustment hole; 900, temperature detection module;

[0043] 10. Substrate. DETAILED DESCRIPTION

[0044] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this application will be more comprehensive and complete and fully convey the concept of the example embodiments to those skilled in the art.

[0045] In addition, described feature, structure or characteristic can be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present application. However, those skilled in the art will appreciate that the technical scheme of the present application can be put into practice without one or more of the specific details, or other methods, components, devices, steps, etc. can be adopted. In other cases, known methods, devices, realizations or operations are not shown or described in detail to avoid blurring the various aspects of the application.

[0046] The present application is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the technical features involved in the various embodiments of the present application described below can be combined with each other as long as they do not conflict with each other. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present application, and should not be understood as limiting the present application.

[0047] See also Figures 1 to 3 As shown, the annular nozzle 100 in this embodiment includes an annular sleeve 110 and N diffusion plates 120. The annular sleeve 110 includes an outer cylinder 111, an inner cylinder 112 and an end plate 113. The inner cylinder 112 is arranged in the outer cylinder 111. The outer cylinder 111 and the inner cylinder 112 can be coaxially arranged, and an annular space is formed between the inner cylinder 112 and the outer cylinder 111. The end plate 113 is arranged at one end of the outer cylinder 111 and the inner cylinder 112, and the end plate 113 connects the outer cylinder 111 and the inner cylinder 112.

[0048] N diffusers 120 are disposed in the annular space, where N is greater than or equal to 2. The N diffusers 120 are sequentially spaced in a direction away from the end plate 113 , and among the N diffusers 120 : the diffuser 120 closest to the end plate 113 is the first diffuser 120 , and the diffuser 120 farthest from the end plate 113 is the Nth diffuser 120 .

[0049] The annular sleeve 110 is provided with an air inlet 1111, which is located on one side of the first diffuser 120 close to the end plate 113. Each diffuser 120 is provided with a plurality of exhaust holes 121 surrounding the inner cylinder 112. In any two adjacent diffusers 120, the exhaust holes 121 are staggered, and the number of exhaust holes 121 of the diffuser 120 increases in sequence in a direction away from the end plate 113. The exhaust holes 121 in two adjacent diffusers 120 are staggered, that is, the center lines of the exhaust holes 121 are not on the same straight line.

[0050] See also Figure 4 As shown, when the annular nozzle 100 is applied to a substrate processing device, the annular nozzle 100 and the pedestal 200 carrying the substrate 10 are both arranged in a reaction chamber 300, and the annular nozzle 100 is located above the pedestal 200. The process gas ejected from the annular nozzle 100 is distributed in an annular shape, and as the process gas flows downward, the process gas diffuses inwardly and outwardly at the same time, and when it flows above the substrate 10 carried by the pedestal 200, the process gas diffuses into a gas uniformly distributed over the entire surface; in some embodiments, when the annular nozzle 100 is applied to a substrate processing device, the inner cavity of the substrate processing device includes a necking portion 320 located between the annular nozzle 100 and the pedestal 200, then as the process gas flows downward, the process gas is first compressed inwardly and then diffused outwardly, and when it flows above the substrate 10 carried by the pedestal 200, the process gas diffuses into a gas uniformly distributed over the entire surface, as shown in FIG. Figure 5 shown.

[0051] The existing substrate processing equipment for epitaxial growth film layer includes an air intake device, a reaction chamber and an exhaust device, and the air intake device and the exhaust device are arranged on opposite sides of the reaction chamber in the lateral direction. The reaction gas introduced by the air intake device includes a middle airflow with a wide distribution and uniform flow distribution and outer airflows with narrower distribution on both sides of the middle airflow. Since the middle airflow and the outer airflow are very close, the airflows quickly mix with each other after entering the reaction chamber, and it is difficult to control the uniform distribution of the reaction gas above the substrate.

[0052] In this embodiment, the annular nozzle 100 includes an annular sleeve 110 and N diffuser plates 120. The annular sleeve 110 includes an outer cylinder 111, an inner cylinder 112 and an end plate 113. The inner cylinder 112 is arranged in the outer cylinder 111, and an annular space is formed between the inner cylinder 112 and the outer cylinder 111. The end plate 113 is arranged at one end of the outer cylinder 111 and the inner cylinder 112. N diffuser plates 120 are arranged in the annular space, N is greater than or equal to 2, and an air inlet hole 1111 is arranged on the annular sleeve 110. The air inlet hole 1111 is located on the side of the first diffuser 120 close to the end plate 113 close to the end plate 113. Each diffuser plate 120 is provided with a plurality of exhaust holes 121 surrounding the inner cylinder 112. In any two adjacent diffuser plates 120, the exhaust holes 121 are staggered, and the number of exhaust holes 121 of the diffuser plates 120 increases sequentially in the direction away from the end plate 113. When the annular nozzle 100 is applied to a substrate processing device, the process gas ejected from the annular nozzle 100 is distributed in a ring shape. As the process gas flows downward, the process gas diffuses inward and outward at the same time. When it flows to the top of the substrate 10 supported by the base 200, the process gas diffuses into a gas evenly distributed over the entire surface, thereby improving the uniformity of the thickness of the formed film layer.

[0053] In some embodiments, the nth diffuser plate 120 is provided with n circles of exhaust holes 121 , 1≤n≤N. For example, three diffusers 120 are provided in the annular space, the first diffuser plate 120 is provided with one circle of exhaust holes 121 , the second diffuser plate 120 is provided with two circles of exhaust holes 121 , and the third diffuser plate 120 is provided with three circles of exhaust holes 121 .

[0054] N diffusion plates 120 are arranged in the annular space. The number of exhaust holes 121 on the diffusion plates 120 gradually increases along the gas flow direction. This design can evenly disperse the gas. The diffusion plates 120 are arranged at intervals, and the gas can be mixed in the space between the diffusion plates 120, further improving the uniformity of process gas distribution.

[0055] It should be noted that the nth diffuser 120 may be provided with n circles of exhaust holes 121, but is not limited thereto. The number of circles of exhaust holes 121 on each diffuser 120 may be set as needed, as long as the number of exhaust holes 121 on the diffuser 120 gradually increases along the gas flow direction.

[0056] In some embodiments, in any two adjacent diffuser plates 120, the exhaust holes 121 are staggered inside and outside or the exhaust holes 121 are staggered circumferentially. In addition, in any two adjacent diffuser plates 120, the exhaust holes 121 can also be staggered inside and outside, and staggered circumferentially. The exhaust holes 121 of two adjacent diffuser plates 120 are staggered inside and outside, that is, the distance from the center line of the exhaust hole 121 of the N-1 diffuser plate 120 to the center line of the outer cylinder 111 is different from the distance from the center line of the exhaust hole 121 of the N diffuser plate 120 to the center line of the outer cylinder 111. The exhaust holes 121 of two adjacent diffuser plates 120 are staggered circumferentially, that is, the center line of the exhaust hole 121 of the N-1 diffuser plate 120 and the center line of the exhaust hole 121 of the N diffuser plate 120 are not on the same radial plane of the outer cylinder 111.

[0057] The exhaust holes 121 in any two adjacent diffusion plates 120 are staggered, so that the diffusion plates 120 can evenly disperse the process gas, thereby improving the uniformity of the process gas distribution.

[0058] In some embodiments, the air inlet 1111 is disposed on the outer tube 111 and is located on a side of the first diffuser 120 close to the end plate 113. At least one air inlet 1111 is provided.

[0059] It should be noted that the air inlet hole 1111 may be disposed on the outer cylinder 111, but is not limited thereto. The air inlet hole 1111 may also be disposed on the end plate 113 or on the inner cylinder 112, depending on the specific circumstances.

[0060] The air inlet hole 1111 is disposed on the outer cylinder 111 , so that the air inlet assembly 400 can pass through the cavity wall of the reaction chamber 300 and connect with the air inlet hole 1111 .

[0061] In some embodiments, the plurality of air inlet holes 1111 are evenly spaced apart along the circumference of the outer cylinder 111 .

[0062] Multiple air inlet holes 1111 are evenly spaced along the circumference of the outer tube 111 to form multi-path evenly dispersed air inlet, which can reduce the requirements for the diffuser plate 120 to evenly disperse the gas. The number of diffuser plates 120 can be reduced, thereby simplifying the structure of the annular nozzle 100 and reducing the production cost of the annular nozzle 100.

[0063] In some embodiments, the outer cylinder 111 and the inner cylinder 112 are both cylindrical cylinders.

[0064] The outer cylinder 111 and the inner cylinder 112 are both cylindrical cylinders, and the structure of the annular nozzle 100 is simpler, which is beneficial to reducing the manufacturing cost of the annular nozzle 100.

[0065] In some embodiments, the outer cylinder 111 and the inner cylinder 112 are both conical cylinders. Figure 6As shown. The cone angle θ of the outer cylinder 111 and the inner cylinder 112 is less than 60 degrees, for example, the cone angle θ of the outer cylinder 111 and the inner cylinder 112 is 1 degree to 60 degrees. As a preferred embodiment, the cone angle θ of the outer cylinder 111 and the inner cylinder 112 is 20±2 degrees. The diffuser plate 120 is perpendicular to the generatrix of the outer cylinder 111 and the generatrix of the inner cylinder 112, the first diffuser plate 120 is located on the side close to the cone bottom surface of the outer cylinder 111 and the inner cylinder 112, and the Nth diffuser plate 120 is located on the side close to the cone top surface of the outer cylinder 111 and the inner cylinder 112.

[0066] The outer cylinder 111 and the inner cylinder 112 are both conical cylinders. The first diffuser 120 is located on the side of the cone bottom surface close to the outer cylinder 111 and the inner cylinder 112, and the Nth diffuser 120 is located on the side of the cone top surface close to the outer cylinder 111 and the inner cylinder 112. The direction in which the process gas is ejected from the Nth diffuser 120 is inclined inward, which can increase the inward diffusion of the gas.

[0067] It should be noted that the first diffuser plate 120 is located on the side of the cone bottom surface close to the outer cylinder 111 and the inner cylinder 112, and the Nth diffuser plate 120 is located on the side of the cone top surface close to the outer cylinder 111 and the inner cylinder 112, but is not limited to this. The Nth diffuser plate 120 can also be set on the side of the cone bottom surface close to the outer cylinder 111 and the inner cylinder 112, and the first diffuser plate 120 is set on the side of the cone top surface close to the outer cylinder 111 and the inner cylinder 112, so that the direction of the process gas ejected by the Nth diffuser plate 120 is inclined outward to increase the outward diffusion of the gas, which can be determined according to the specific situation.

[0068] The present application also provides a substrate processing device, which includes the annular showerhead 100, the base 200, the reaction chamber 300 and the air inlet assembly 400 disclosed above. Figure 4 As shown. The reaction chamber 300 includes an upper chamber 310 and a lower chamber 330 which are interconnected. The base 200 is disposed in the lower chamber 330. The base 200 is used to carry the substrate 10 to be processed. The annular nozzle 100 is disposed in the upper chamber 310. The Nth diffusion plate 120 of the annular nozzle 100 is located on the side of the annular nozzle 100 close to the base 200. The gas inlet assembly 400 passes through the cavity wall of the reaction chamber 300 and is connected to the gas inlet hole 1111 of the annular nozzle 100. The gas inlet assembly 400 is used to introduce process gas, which includes reaction gas or purge gas.

[0069] When the substrate processing device is working: the process gas sprayed by the annular nozzle 100 is distributed in a ring shape. As the process gas flows downward, the process gas diffuses inward and outward at the same time. When it flows to the top of the substrate 10 supported by the base 200, the process gas diffuses into a gas evenly distributed on the entire surface, so that a film layer of uniform thickness can be formed on the surface of the substrate 10.

[0070] The existing substrate processing equipment includes an air intake device, a reaction chamber and an exhaust device, and the air intake device and the exhaust device are arranged on opposite sides of the reaction chamber in the lateral direction. The reaction gas introduced by the air intake device includes a middle airflow with a wide distribution and uniform flow distribution and an outer airflow with a narrower distribution on both sides of the middle airflow. Since the middle airflow and the outer airflow are very close, the airflows quickly mix with each other after entering the reaction chamber, and it is difficult to control the uniform distribution of the reaction gas above the substrate. Therefore, when the existing substrate processing equipment processes the substrate, it is necessary to drive the substrate to rotate at a high speed through the base supporting the substrate to improve the uniformity of the film layer formed.

[0071] When the substrate processing device in the present embodiment processes the substrate 10, the process gas ejected from the annular nozzle 100 is distributed in a ring shape and may be unevenly distributed. As the process gas flows downward, the process gas diffuses inward and outward at the same time. When it flows to the top of the substrate 10 supported by the base 200, the process gas diffuses into a gas uniformly distributed over the entire surface. Since the uniformity of the process gas distribution is improved, the rotation speed of the substrate 10 can be reduced or even stopped, thereby avoiding contamination in the chamber caused by the rotation of the base 200, and the structure of the substrate processing device can be designed to be simpler to reduce the manufacturing cost of the substrate processing device.

[0072] In some embodiments, the reaction chamber 300 further includes a necking portion 320, the necking portion 320 connects the upper chamber 310 and the lower chamber 330, and the outer edges of the orthographic projections of the upper chamber 310, the lower chamber 330, and the Nth diffusion plate 120 on the base 200 are all located outside the necking portion 320. In other words, the necking portion 320 shrinks inward relative to the upper chamber 310 and the lower chamber 330.

[0073] When the substrate processing device is working: the process gas ejected from the annular nozzle 100 is distributed in an annular shape. As the process gas flows downward, when entering the necking portion 320, the process gas is first compressed inwardly because the necking portion 320 shrinks inwardly relative to the upper chamber 310 and the lower chamber 330. After passing through the necking portion 320, the process gas diffuses inwardly and outwardly at the same time, and when it flows above the substrate 10 supported by the susceptor 200, it diffuses into a gas uniformly distributed over the entire surface, such as Figure 5 shown.

[0074] The process gas will first be compressed inwards to make the gas distribution uniform, and then diffuse inwards and outwards at the same time to form a uniformly distributed gas on the entire surface, thereby improving the uniformity of the process gas distribution.

[0075] In some embodiments, the substrate processing device further includes an upper heating module 510 , which is disposed around the necking portion 320 . The lower chamber 330 includes a transmissive cavity wall. The upper heating module 510 can emit electromagnetic waves, which can pass through the transmissive cavity wall to heat the substrate 10 .

[0076] The upper heating module 510 is disposed around the necked portion 320 , and the necked portion 320 shrinks inwardly relative to the upper chamber 310 and the lower chamber 330 , thereby increasing the space for installing the upper heating module 510 .

[0077] In some embodiments, the reaction chamber 300 further includes an exhaust chamber 340, which is located on the side of the lower chamber 330 away from the necking portion 320, and an exhaust port is provided on the chamber wall of the exhaust chamber 340. The substrate processing apparatus further includes a lower heating module 520, which is arranged around the exhaust chamber 340, and the lower chamber 330 includes a transmissive chamber wall, and the lower heating module 520 can emit electromagnetic waves, and the electromagnetic waves can pass through the transmissive chamber wall to heat the substrate 10.

[0078] The heating modules are disposed at the upper and lower sides of the lower chamber 330 , and heat the substrate 10 simultaneously from the upper and lower sides, which can increase the heating speed and improve the temperature uniformity in the lower chamber 330 .

[0079] It should be noted that the substrate processing apparatus may be provided with both the upper heating module 510 and the lower heating module 520, but is not limited thereto. The substrate processing apparatus may also be provided with one of the upper heating module 510 and the lower heating module 520, depending on the specific situation.

[0080] In some embodiments, at least the inner walls of the upper chamber 310, the necked portion 320, the lower chamber 330 and the exhaust chamber 340 of the reaction chamber 300 are made of quartz material, and the connection between the upper chamber 310 and the necked portion 320, the connection between the necked portion 320 and the lower chamber 330, and the connection between the lower chamber 330 and the exhaust chamber 340 can be connected by quartz welding.

[0081] The various parts of the inner cavity of the reaction chamber 300 are connected by quartz welding. The quartz material has good thermal stability and can ensure the normal operation of the reaction chamber 300.

[0082] It should be noted that the connection between the upper chamber 310 and the necking portion 320, the connection between the necking portion 320 and the lower chamber 330, and the lower chamber 330 and the exhaust chamber 340 can be connected by quartz welding, but is not limited to this. For the connection parts that are not directly exposed to the heating areas of the upper heating module 510 and the lower heating module 520, O-rings with cooling water cooling function can also be used for sealing, depending on the specific situation.

[0083] In some embodiments, the substrate processing apparatus further includes a load lock chamber 600, which is disposed on two opposite sides of the lower chamber 330 in a horizontal direction. The load lock chamber 600 is used to move the substrate 10 to be processed into the lower chamber 330 and to move the processed substrate 10 out of the lower chamber 330. The connection between the load lock chamber 600 and the lower chamber 330 may be sealed by an O-ring having a cooling water cooling function.

[0084] The connection between the load lock chamber 600 and the lower chamber 330 is not directly exposed to the heating area of ​​the upper heating module 510 and the lower heating module 520, and is sealed by an O-ring with cooling water cooling function, which can simplify the structure of the substrate processing device and reduce the manufacturing cost of the substrate processing device.

[0085] In some embodiments, the substrate processing device further includes a flow guide liner 700, which is connected to the inner wall of the reaction chamber 300, and covers at least the inner wall of the necking portion 320. The inner surface of the flow guide liner 700 and the inner wall of the upper chamber 310 form a streamlined inner cavity, which reduces the difficulty of gas diffusion and improves the uniformity of gas distribution. The flow guide liner 700 can be made of quartz material.

[0086] For example, the inner surface of one end of the flow guide liner 700 is smoothly connected to the inner surface of the upper chamber 310, and the other end of the flow guide liner 700 extends to the load lock chamber 600. The inner surface of the flow guide liner 700 is smoothly connected to the inner surface of the upper chamber 310, that is, the two are connected in a curve without sharp corners or turns, which further reduces the effect of the tortuosity of the chamber wall on gas diffusion. The annular nozzle 100 is located at the side of the connection between the flow guide liner 700 and the upper chamber 310 away from the lower chamber 330.

[0087] The flow guide liner 700 is used to guide the flow, thereby eliminating the sharp corners of the inner cavity of the reaction chamber 300, and preventing the sharp corners of the inner cavity of the reaction chamber 300 from affecting the outward diffusion of the process gas, thereby improving the uniformity of the distribution of the process gas.

[0088] In some embodiments, the upper heating module 510 can emit electromagnetic waves, and the electromagnetic waves can pass through the guide liner 700 to heat the substrate 10 .

[0089] The guide liner 700 can play a guiding role without affecting the upper heating module 510 heating the substrate 10 and without affecting the substrate processing device processing the substrate 10 .

[0090] See also Figure 4 and Figure 7 As shown, the substrate processing device further includes a flow equalizer 800, which is disposed at the necking portion 320. The flow equalizer 800 is provided with a plurality of adjustment holes 810, and the adjustment holes 810 are used to adjust the distribution uniformity of the process gas entering the lower chamber 330 through the flow equalizer 800 at the substrate 10. It should be understood that the sizes and positions of the different adjustment holes 810 on the flow equalizer 800 can be set according to the distribution of the process gas before passing through the flow equalizer 800, so that the process gas entering the lower chamber 330 after passing through the flow equalizer 800 is more evenly distributed at the substrate 10.

[0091] A flow equalizer 800 is disposed at the necking portion 320 , and the distribution of the process gas is secondarily adjusted by the flow equalizer 800 , so that the uniformity of the distribution of the process gas can be further improved.

[0092] It should be noted that a flow equalizer 800 may be provided at the necking portion 320 to perform secondary adjustment on the distribution of the process gas, but the invention is not limited thereto. When a plurality of air inlet holes 1111 are provided on the annular sleeve 110, the distribution of the process gas may also be adjusted by adjusting the gas flow rate of each air inlet hole 1111, and the specific adjustment may depend on the circumstances.

[0093] In some embodiments not shown in the figure, the inner surface of the necked portion 320 is smoothly connected to the inner surface of the upper chamber 310 and the inner surface of the lower chamber 330 to form a streamlined inner cavity.

[0094] The necking portion 320 is smoothly connected to the upper chamber 310 and the lower chamber 330 to form a streamlined inner cavity, eliminating the sharp corners of the inner cavity of the reaction chamber 300, preventing the sharp corners of the inner cavity of the reaction chamber 300 from affecting the outward diffusion of the process gas, and improving the uniformity of the distribution of the process gas.

[0095] In some embodiments, the substrate processing apparatus further includes a temperature detection module 900, which is disposed on a side of the upper chamber 310 away from the susceptor 200, and can be specifically disposed inside or outside the upper chamber 310. The orthographic projection of the probe of the temperature detection module 900 on the susceptor 200 is located within the orthographic projection of the inner cylinder 112 of the annular nozzle 100 on the susceptor 200.

[0096] The orthographic projection of the probe of the temperature detection module 900 on the base 200 is located within the orthographic projection of the inner cylinder 112 of the annular nozzle 100 on the base 200, that is, the annular nozzle 100 will not block the temperature detection module 900 from sending or receiving detection signals, thereby improving the detection accuracy of the temperature detection module 900.

[0097] By way of example, the substrate processing device is an epitaxial device for preparing an epitaxial layer on the substrate 10 .

[0098] The terms "first", "second", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", etc. may explicitly or implicitly include one or more of the feature. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0099] In this application, unless otherwise clearly specified and limited, the terms "assembly", "connection" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0100] In the description of this specification, the description with reference to the terms "some embodiments", "exemplarily", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0101] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application. Therefore, any changes or modifications made in accordance with the claims and description of the present application should fall within the scope of the patent of this application.

Claims

1. An annular nozzle, characterized in that: include: An annular sleeve, comprising an outer cylinder, an inner cylinder and an end plate, wherein the inner cylinder is arranged in the outer cylinder, an annular space is formed between the inner cylinder and the outer cylinder, and the end plate is arranged at one end of the outer cylinder and the inner cylinder, and the end plate connects the outer cylinder and the inner cylinder; N diffuser plates are arranged in the annular space, N is greater than or equal to 2, and the N diffuser plates are arranged in sequence and spaced apart in a direction away from the end plate. The diffuser plate closest to the end plate among the N diffuser plates is the first diffuser plate. An air inlet hole is arranged on the annular sleeve, and the air inlet hole is located on a side of the first diffuser plate close to the end plate. Each of the diffuser plates is provided with a plurality of exhaust holes surrounding the inner tube, and in any two adjacent diffuser plates: the exhaust holes are staggered, and the number of exhaust holes of the diffuser plates increases in sequence in a direction away from the end plate.

2. The annular nozzle according to claim 1, characterized in that: The nth diffusion plate is provided with n circles of the exhaust holes, 1≤n≤N.

3. The annular nozzle according to claim 1 or 2, characterized in that: In any two adjacent diffusion plates: the exhaust holes are staggered inwardly and outwardly and / or the exhaust holes are staggered in circumferential direction.

4. The annular nozzle according to claim 1, characterized in that: The air inlet hole is arranged on the outer cylinder.

5. The annular nozzle according to claim 4, characterized in that: The plurality of air inlet holes are evenly spaced along the circumference of the outer cylinder.

6. The annular nozzle according to claim 1, characterized in that: The outer cylinder and the inner cylinder are both cylindrical cylinders or conical cylinders.

7. The annular nozzle according to claim 6, characterized in that: The outer cylinder and the inner cylinder are both conical cylinders, and the cone angles of the outer cylinder and the inner cylinder are both less than 60 degrees. The diffuser plate is perpendicular to the generatrix of the outer cylinder and the generatrix of the inner cylinder. The diffuser plate farthest from the end plate among the N diffusers is the Nth diffuser plate, and the Nth diffuser plate is located on the side of the first diffuser plate close to the cone top surface of the conical cylinder.

8. A substrate processing device, characterized in that: include: A reaction chamber, comprising an upper chamber and a lower chamber that are interconnected; A base is disposed in the lower chamber, and the base is used to carry a substrate to be processed; The annular nozzle according to any one of claims 1 to 7, arranged in the upper chamber, the diffuser farthest from the end plate among the N diffusers is the Nth diffuser, and the Nth diffuser is located on the side of the first diffuser close to the base; An air inlet assembly is connected to the air inlet hole of the annular nozzle, and the air inlet assembly is used to introduce process gas.

9. The substrate processing device according to claim 8, characterized in that: The reaction chamber further includes a necked portion, which connects the upper chamber and the lower chamber, and the outer edges of the orthographic projections of the upper chamber, the lower chamber and the Nth diffusion plate on the base are all located outside the necked portion.

10. The substrate processing apparatus according to claim 9, wherein: The substrate processing device further includes an upper heating module, which is arranged around the necking portion. The lower chamber includes a transmissive cavity wall. The upper heating module can emit electromagnetic waves, and the electromagnetic waves can pass through the transmissive cavity wall to heat the substrate.

11. The substrate processing apparatus according to claim 9, wherein: The substrate processing device further comprises a guide liner connected to the inner wall of the reaction chamber, the guide liner at least covers the inner wall of the necked portion, and the inner surface of the guide liner and the inner wall of the upper chamber form a streamlined inner cavity.

12. The substrate processing apparatus according to claim 11, characterized in that: The inner surface of the guide liner is smoothly connected to the inner surface of the upper chamber, and the annular nozzle is located at a side of the connection between the guide liner and the upper chamber away from the lower chamber.

13. The substrate processing apparatus according to claim 11, wherein: The guide liner is connected to the lower chamber at one end away from the upper chamber. The substrate processing device also includes an upper heating module, which is arranged around the necking portion. The upper heating module can emit electromagnetic waves, and the electromagnetic waves can pass through the guide liner to heat the substrate.

14. The substrate processing apparatus according to claim 9, wherein: The substrate processing device further includes a flow equalizer plate, which is disposed on the neck portion and has a plurality of adjustment holes disposed on the flow equalizer plate. The adjustment holes are used to adjust the distribution uniformity of the process gas entering the lower chamber through the flow equalizer plate at the substrate.

15. The substrate processing apparatus according to claim 9, wherein: The inner surface of the necked portion is smoothly connected to the inner surface of the upper chamber and the inner surface of the lower chamber to form a streamlined inner cavity.

16. The substrate processing apparatus according to claim 8, wherein: The substrate processing device further includes a temperature detection module, which is disposed on a side of the upper chamber away from the base, and the orthographic projection of a probe of the temperature detection module on the base is located within the orthographic projection of the inner cylinder of the annular nozzle on the base.

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