Dual-cavity semiconductor processing system and valve response speed detection matching method thereof

Abstract

The invention provides a dual-cavity semiconductor processing system and a valve response speed detection matching method thereof. The double-cavity semiconductor processing system comprises a first reaction cavity and a second reaction cavity which are connected to the same gas source, the gas source is connected to the first reaction cavity through a first main pipeline and connected to the second reaction cavity through a second main pipeline, pressure detectors are arranged on the main pipelines respectively, and the double-cavity semiconductor processing system further comprises a reaction source. The reaction source is connected to the first reaction cavity through a first source pipeline and connected to the second reaction cavity through a second source pipeline, at least one first source valve is arranged on the first source pipeline, and at least one second source valve is arranged on the second source pipeline. According to the method, valves on a first main pipeline and a second main pipeline and valves on a first source pipeline and valves on a second source pipeline are controlled according to a preset flow, and whether the response speeds of the valves on the first main pipeline and the second main pipeline of the double cavities are matched with the response speeds of the valves on the first source pipeline and the second source pipeline or not can be judged according to the detection result in combination with detection on the pipeline pressure.

Description

Technical Field

[0001] The present application mainly relates to the semiconductor field, and in particular to a valve response speed detection and matching method for a dual-chamber semiconductor processing system, and a dual-chamber semiconductor processing system using the detection and matching method. Background Art

[0002] With the development of semiconductor technology, the requirements for the consistency of semiconductor equipment in semiconductor technology are getting higher and higher. Semiconductor reaction chambers involve many pipelines and switch valves. Since the pressure of the pipeline entering the chamber has an important impact on the results of the semiconductor process, the response speed and time of the switch valve also pose a severe test. Mismatched valve response speed will seriously affect the consistency of pipeline pressure, especially for dual-chamber semiconductor systems. Mismatched valve response speed will eventually lead to inconsistency in the dual-chamber process, reducing the uniformity and yield of the product. Summary of the invention

[0003] In view of the above technical problems, the present application proposes a dual-chamber semiconductor processing system and a valve response speed detection and matching method thereof, which are used to detect whether the response speeds of valves in the dual-chamber semiconductor processing system are matched.

[0004] In order to solve the above technical problems, the present application provides a valve response speed detection and matching method for a dual-chamber semiconductor processing system, wherein the dual-chamber semiconductor processing system comprises a first reaction chamber and a second reaction chamber, wherein the first reaction chamber and the second reaction chamber are connected to the same gas source, wherein the gas source is connected to the first reaction chamber via a first main pipeline, and is connected to the second reaction chamber via a second main pipeline, and pressure detectors are respectively provided on the first main pipeline and the second main pipeline; the valve response speed detection and matching method comprises:

[0005] Step S11: making the first main pipeline and the second main pipeline both vacuum and sealed;

[0006] Step S12: opening the first valve to connect the gas source with the first main pipeline, closing the first valve after waiting for a first time, and recording the current pressure value of the first main pipeline as P11, wherein the first valve is arranged on a side of the first main pipeline close to the gas source;

[0007] Step S13: opening the second valve to connect the first main pipeline with the first reaction chamber, closing the second valve after waiting for a second time, and recording the current pressure value of the first main pipeline as P12, wherein the second valve is arranged on a side of the first main pipeline close to the first reaction chamber;

[0008] Step S14: looping through step S12 and step S13, and obtaining P11 and P12 updated after each loop. When the values ​​of P11 and P12 are stable, the loop ends, and the stable P11 is recorded as P11s, and the stable P12 is recorded as P12s.

[0009] Step S15: opening the third valve to connect the gas source with the second main pipeline, closing the third valve after waiting for a first time, and recording the current pressure value of the second main pipeline as P21, wherein the third valve is arranged on a side of the second main pipeline close to the gas source;

[0010] Step S16: opening the fourth valve to connect the second main pipeline with the second reaction chamber, closing the fourth valve after waiting for a second time, and recording the current pressure value of the second main pipeline as P22, wherein the fourth valve is arranged on a side of the second main pipeline close to the second reaction chamber;

[0011] Step S17: looping through step S15 and step S16, and obtaining P21 and P22 updated after each loop. When the values ​​of P21 and P22 are stable, the loop ends, and the stable P21 is recorded as P21s, and the stable P22 is recorded as P22s.

[0012] Step S18: Calculate the first difference between P11s and P21s, calculate the second difference between P12s and P22s, and determine the valve response speed based on the first difference and the second difference: when the first difference and the second difference are both within a first preset range, it indicates that the response speeds of the first valve, the second valve, the third valve and the fourth valve match.

[0013] To solve the above technical problems, the present application also provides a dual-chamber semiconductor processing system, including a gas source, a first reaction chamber, a second reaction chamber, a first valve, a second valve, a third valve and a fourth valve, wherein the gas source is connected to the first reaction chamber through a first main pipeline, and the gas source is connected to the second reaction chamber through a second main pipeline, the first valve is arranged on a side of the first main pipeline close to the gas source, the second valve is arranged on a side of the first main pipeline close to the first reaction chamber, the third valve is arranged on a side of the second main pipeline close to the gas source, and the fourth valve is arranged on a side of the second main pipeline close to the second reaction chamber; the dual-chamber semiconductor processing system is configured to: use the valve response speed detection and matching method as described above to match the response speeds of the first valve and the second valve of the first main pipeline, and the third valve and the fourth valve on the second main pipeline.

[0014] The valve response speed detection and matching method of the present application controls the pneumatic valves on the first main pipeline and the second main pipeline of the dual-cavity according to a predetermined process, and combined with the detection of the pipeline pressure, it can be judged according to the detection results whether the valve response speeds on the first main pipeline and the second main pipeline of the dual-cavity match; and the method of the present application can also control the valves on the first source pipeline and the second source pipeline of the dual-cavity according to a predetermined process, and combined with the pipeline pressure detection, it can be judged according to the detection results whether the response speeds of the valves on the first source pipeline and the second source pipeline of the dual-cavity match, so as to better realize the synchronous operation of the dual-cavity and improve the process efficiency and product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The accompanying drawings are included to provide a further understanding of the present application. They are included and constitute a part of the present application. The accompanying drawings illustrate embodiments of the present application and together with the present specification serve to explain the principles of the present application. In the accompanying drawings:

[0016] Figure 1 is a block diagram of a dual-chamber semiconductor processing system according to an embodiment of the present application;

[0017] Figure 2 is an exemplary flow chart of a valve response speed detection and matching method according to an embodiment of the present application;

[0018] Figure 3 It is an exemplary flow chart of a valve response speed detection and matching method according to another embodiment of the present application. DETAILED DESCRIPTION

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for the description of the embodiments. Obviously, the drawings described below are only some examples or embodiments of the present application. For ordinary technicians in this field, the present application can also be applied to other similar scenarios based on these drawings without creative work. Unless it is obvious from the language environment or otherwise explained, the same reference numerals in the figures represent the same structure or operation.

[0020] As shown in this application, unless the context clearly indicates an exception, the words "a", "an", "a kind" and / or "the" do not refer to the singular, but also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0021] In the description of the present application, it should be understood that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or element referred to must have a specific direction or be constructed and operated in a specific direction, and therefore cannot be understood as limiting the scope of protection of the present application; the directional words "inside and outside" refer to the inside and outside relative to the contours of each component itself.

[0022] In addition, it should be noted that the use of words such as "first" and "second" to define components is only for the convenience of distinguishing the corresponding components. If not otherwise stated, the above words have no special meaning and cannot be understood as limiting the scope of protection of this application. In addition, although the terms used in this application are selected from well-known and commonly used terms, some terms mentioned in the specification of this application may be selected by the applicant at his or her discretion, and their detailed meanings are explained in the relevant parts of the description of this article. In addition, it is required to understand this application not only by the actual terms used, but also by the meaning implied by each term.

[0023] Flowcharts are used in the present application to illustrate the operations performed by the system according to the embodiments of the present application. It should be understood that the preceding or following operations are not necessarily performed accurately in order. On the contrary, various steps may be processed in reverse order or simultaneously. At the same time, other operations may be added to these processes, or one or more operations may be removed from these processes.

[0024] The dual-chamber semiconductor processing system of the present application is applied to any system for performing semiconductor processes, the system comprising a reaction chamber, a pipeline and a valve arranged on the pipeline. Preferably, the dual-chamber semiconductor processing system of the present application is an atomic layer deposition (ALD) system comprising two reaction chambers.

[0025] Figure 1 is a block diagram of a dual-chamber semiconductor processing system according to an embodiment of the present application. Figure 1 As shown, the dual-chamber semiconductor processing system 100 of this embodiment includes a gas source 110, a first reaction chamber 210, and a second reaction chamber 310. The gas source 110 is connected to the first reaction chamber 210 through a first main pipeline 220, and is connected to the second reaction chamber 310 through a second main pipeline 320. A first valve 231 is provided on the side of the first main pipeline 220 close to the gas source 110, and a second valve 232 is provided on the side close to the first reaction chamber 210. A third valve 331 is provided on the side of the second main pipeline 320 close to the gas source 110, and a fourth valve 332 is provided on the side close to the second reaction chamber 310.

[0026] In some embodiments, the first valve 231 , the second valve 232 , the third valve 331 , and the fourth valve 332 are all pneumatic valves for controlling the opening and closing of the pipeline.

[0027] like Figure 1 As shown, the first reaction chamber 210 and the second reaction chamber 310 are both connected to a vacuum pump 120. The vacuum pump 120 performs exhaust when in operation. The gas source 110 is used to provide gas to the reaction chamber, and the gas may be a carrier gas, a purge gas, a cleaning gas, etc. When the first valve 231, the second valve 232, the third valve 331, and the fourth valve 332 are all in an open state, the gas may flow from the gas source 110 to the vacuum pump 120.

[0028] like Figure 1 As shown, the dual-chamber semiconductor processing system 100 also includes a first reaction source 240 and a second reaction source 340 for providing reaction source substances. The present application does not limit the specific reaction source substances, which can be any reaction source substances used for semiconductor substrate thin film deposition. The first reaction source 240 and the second reaction source 340 shown in the block diagram can be used to represent a container or device containing reaction source substances. Among them, the reaction source substances provided by the first reaction source 240 and the second reaction source 340 can be the same or different. The first reaction source 240 is connected to the first reaction chamber 210 through the first source pipeline 250, and the second reaction source 340 is connected to the second reaction chamber 310 through the second source pipeline 350.

[0029] In some embodiments, the first source pipe 250 is connected to the first main pipe 220 between the first valve 231 and the second valve 232. Figure 1 As shown, the first source pipeline 250 is bridged on the first main pipeline 220 and is located between the first valve 231 and the second valve 232. Bridging here means that the first source pipeline 250 is connected to a section of the pipeline on the first main pipeline 220. Specifically, the first main pipeline 220 is divided into three sections, starting from the side close to the first valve 231, namely the first section 220a, the second section 220b and the third section 220c. The first source pipeline 250 is connected to both ends of the second section 220b. A first regulating valve 233 may be provided in the second section 220b. In one embodiment, the first regulating valve 233 is a needle valve, and its opening degree can be adjusted to adjust the opening and closing degree of the pipeline of the second section 220b and control the fluid flow in the first main pipeline 220. At least one first source valve is provided on the first source pipeline 250, and the first source valve is used to control the opening and closing of the first source pipeline 250. In one embodiment, the first source valve is a pneumatic valve. In Figure 1In the illustrated embodiment, five first source valves 261 to 265 are provided respectively on five branches of the first source pipeline 250, and are used to independently control the opening and closing of each branch. For example, the first source valves 263 and 264 are provided at the inlet and outlet positions of the first reaction source 240, and can be used to control whether the gas can enter the first reaction source 240 or whether the gas can be output from the first reaction source 240. When the first source valves 261, 263, 264, and 265 are all in an open state, and the first valve 231 and the second valve 232 are also in an open state, after the gas output from the gas source 110 passes through the first section 220a of the first main pipeline 220, no matter whether the first regulating valve 233 in the second section 220b is open or closed, the gas will pass through the first source valves 261 and 263 on the first source pipeline 250 and enter the first reaction source 240. The gas reacts with the substance in the first reaction source 240 to generate reaction gas, and the reaction gas then passes through the first source valves 264 and 265 and the third section 220 c and enters the first reaction chamber 210 for performing a deposition process.

[0030] Figure 1 The second source pipeline 350 in the illustrated embodiment is similar to the first source pipeline 250. The second source pipeline 350 is bridged on the second main pipeline 320 and is located between the third valve 331 and the fourth valve 332. The second main pipeline 320 is divided into three sections, starting from the side close to the third valve 331, namely the first section 320a, the second section 320b and the third section 320c. The second source pipeline 350 is connected to both ends of the second section 320b. A second regulating valve 333 may be provided in the second section 320b. In one embodiment, the second regulating valve 333 is a needle valve, the opening of which can be adjusted to adjust the opening and closing degree of the pipeline in the second section 320b and control the fluid flow in the second main pipeline 320. At least one second source valve is provided on the second source pipeline 350, and the second source valve is used to control the opening and closing of the second source pipeline 350. In one embodiment, the second source valve is a pneumatic valve. In Figure 1In the illustrated embodiment, five second source valves 361 to 365 are provided respectively on five branches of the second source pipeline 350, and are used to independently control the opening and closing of each branch. For example, the second source valves 363 and 364 are provided at the inlet and outlet positions of the second reaction source 340, and can be used to control whether the gas can enter the second reaction source 340 or whether the gas can be output from the second reaction source 340. When the second source valves 361, 363, 364, and 365 are all in an open state, and the third valve 331 and the fourth valve 332 are also in an open state, after the gas output from the gas source 110 passes through the first section 320a of the second main pipeline 320, no matter whether the second regulating valve 333 in the second section 320b is open or closed, the gas will pass through the second source valves 361 and 363 on the second source pipeline 350 and enter the second reaction source 340. The gas reacts with the substance in the second reaction source 340 to generate reaction gas, and the reaction gas then passes through the second source valves 364 and 365 and the third section 320 c and enters the second reaction chamber 310 for performing a deposition process.

[0031] It should be noted that in other embodiments, the dual-chamber semiconductor processing system 100 may include only one reaction source. Figure 1 The first reaction source 240 and the second reaction source 340 are combined into one, and two sets of identical source pipes are configured for the combined reaction source, namely the first source pipe 250 and the second source pipe 350, both of which can be connected to the reaction source. This embodiment is suitable for the scenario where two reaction chambers only need the same reaction source.

[0032] In some embodiments, the first main pipeline 220 and the second main pipeline 320 are respectively provided with a pressure detector. The pressure detector can be specifically implemented as a pressure gauge. Figure 1 As shown, the dual-chamber semiconductor processing system 100 also includes a first flow controller 271 and a first pressure gauge 272 disposed on the first main pipeline 220, which are disposed between the first valve 231 and the first regulating valve 233 in sequence. More specifically, the first flow controller 271 and the first pressure gauge 272 are both disposed on the first section 220a of the first main pipeline 220. The first flow controller 271 is used to control the flow rate of the gas flowing out through the first valve 231 in the first main pipeline 220. The first pressure gauge 272 is used to measure the pressure of the pipeline located in the first main pipeline 220 after flow control.

[0033] Meanwhile, the dual-chamber semiconductor processing system 100 further includes a second flow controller 371 and a second pressure gauge 372 disposed on the second main pipeline 320, which are disposed sequentially between the third valve 331 and the second regulating valve 333. More specifically, the second flow controller 371 and the second pressure gauge 372 are both disposed on the first section 320a of the second main pipeline 320. The second flow controller 371 is used to control the flow rate of the gas flowing out through the third valve 331 in the second main pipeline 320. The second pressure gauge 372 is used to measure the pressure of the pipeline located in the second main pipeline 320 after the flow control.

[0034] The following combination Figure 1 and Figure 2 The process of detecting and matching the first valve 231 , the second valve 232 , the third valve 331 , and the fourth valve 332 using the valve response speed detection and matching method of the present application is described.

[0035] like Figure 2 As shown, the valve response speed detection and matching method includes the following steps:

[0036] Step S11: Make the first main pipeline 220 and the second main pipeline 320 both vacuum and keep them sealed.

[0037] In some embodiments, before step S11, the process further includes: setting the first flow controller 271 to a first flow rate, and setting the first regulating valve to a first opening degree. In this embodiment, the first opening degree is fully open. At the same time, setting the second flow controller 371 to a first flow rate, and setting the second regulating valve to a fully open state.

[0038] Step S11 is specifically implemented as follows: opening the first valve 231, the second valve 232, the third valve 331 and the fourth valve 332, and operating the vacuum pump 120, so that all the gas in the first main pipeline 220 and the second main pipeline 320 is completely evacuated. The air pressure in the first main pipeline 220 and the second main pipeline 320 can be observed by the measured value P1 of the first pressure gauge 272 and the measured value P2 of the second pressure gauge 372. When P1 and P2 are both 0 or near 0, it indicates that the first main pipeline 220 and the second main pipeline 320 are both in a vacuum state. After the first pipeline 220 and the second main pipeline 320 are both in a vacuum state, all valves in an open state are closed.

[0039] It should be noted that during the vacuuming process, the first source valves 263, 264 and the second source valves 363, 364 are kept closed. If the first source valves 261, 262, 265 and the second source valves 361, 362, 365 are open, then after the first pipeline 220 and the second main pipeline 320 are both in the vacuum state, these open source valves are also closed.

[0040] After the valve is closed, the gas pressure in the first pipeline 220 and the second main pipeline 320 is maintained at 0 or close to 0, that is, maintained in a vacuum state.

[0041] Step S12: Open the first valve 231 to connect the gas source 110 with the first main pipeline 220, wait for the first time t1 and then close the first valve 231, and record the current pressure value of the first main pipeline 220 as P11, wherein the first valve 231 is arranged on a side of the first main pipeline 220 close to the gas source 110. Specifically, the first valve 231 is arranged on the first section 220a of the first main pipeline 220.

[0042] It should be noted that, since the initial gas pressure of the first main pipeline 220 is 0 or close to 0, P11 increases compared to the previous pressure state of the first main pipeline 220 .

[0043] Step S13: Open the second valve 232 to connect the first main pipeline 220 with the first reaction chamber 210, wait for the second time t2, then close the second valve 232, and record the current pressure value of the first main pipeline 220 as P12, wherein the second valve 232 is arranged on one side of the first main pipeline 220 close to the first reaction chamber 210. Specifically, the second valve 232 is arranged on the third section 220c of the first main pipeline 220.

[0044] It should be noted that since the second valve 232 is opened, the gas in the first main pipeline 220 enters the first reaction chamber 210 , and compared with the previous pressure state P11 of the first main pipeline 220 , P12 is reduced.

[0045] The present application does not limit the first duration t1 and the second duration t2. In one embodiment, the first duration t1 is equal to the second duration t2. For example, t1=t2=0.5s. The range of t1 and t2 can be 0.1s to 2.0s.

[0046] Step S14: Execute step S12 and step S13 in a loop, and obtain P11 and P12 updated after each loop. When the values ​​of P11 and P12 are stable, end the loop, and record the stable P11 as P11s, and the stable P12 as P12s.

[0047] The present application does not limit how to judge whether the value is stable, and conventional means in the art can be used to judge. For example, if the value change of P11 and P12 after 2 or 3 cycles is 0, or the change is within a preset range, it means that the value of P11 and P12 is stable.

[0048] Step S15: Open the third valve 331 to connect the gas source 110 with the second main pipeline 320, wait for the first time t1 and then close the third valve 331, and record the current pressure value of the second main pipeline 320 as P21, wherein the third valve 331 is arranged on a side of the second main pipeline 320 close to the gas source 110. Specifically, the third valve 331 is arranged on the first section 320a of the second main pipeline 320.

[0049] The change pattern of P21 here is similar to that of P11. Compared with the initial vacuum or pressure near 0, P21 increases.

[0050] Step S16: Open the fourth valve 332 to connect the second main pipeline 320 with the second reaction chamber 310, wait for the second time t2, then close the fourth valve 332, and record the current pressure value of the second main pipeline 320, which is recorded as P22, wherein the fourth valve 332 is arranged on one side of the second main pipeline 320 close to the second reaction chamber 310. Specifically, the fourth valve 332 is arranged on the third section 320c of the second main pipeline 320.

[0051] The change pattern of P22 here is similar to that of P12, and P22 is lower than P21.

[0052] It should be noted that the opening time of the third valve 331 is equal to the opening time of the first valve 231, both of which are the first time length t1. This setting is to match the corresponding valves of different reaction chambers. Similarly, the opening time of the fourth valve 332 is also equal to the opening time of the second valve 232, both of which are the second time length t2.

[0053] Step S17: Execute step S15 and step S16 in a loop, and obtain P21 and P22 updated after each loop. When the values ​​of P21 and P22 are stable, end the loop, and record the stable P21 as P21s, and the stable P22 as P22s.

[0054] Step S18: Calculate the first difference ΔP1 between P11s and P21s, calculate the second difference ΔP2 between P12s and P22s, and determine the valve response speed based on the first difference ΔP1 and the second difference ΔP2: when the first difference ΔP1 and the second difference ΔP2 are both within the first preset range, it indicates that the response speeds of the first valve 231, the second valve 232, the third valve 331 and the fourth valve 332 match.

[0055] In some embodiments, the first preset range is less than a preset pressure value. For example, when ΔP1<0.05 torr and ΔP2<0.05 torr, it indicates that the response speeds of the valves are matched.

[0056] It should be noted that, at least during the execution of the above steps S11 to S17, the vacuum pump 120 remains turned on, that is, the vacuuming action is continuously performed.

[0057] Through the above steps S11 to S18, it is possible to detect whether the multiple pneumatic valves on the main pipelines of the first reaction chamber 210 and the second reaction chamber 310 match. In the process, if the response speeds of the multiple valves on the main pipelines corresponding to the first reaction chamber 210 and the second reaction chamber 310 match, the pressure and flow of the two sets of main pipelines can be matched, and the dosages of the first reaction source 240 and the second reaction source 340 can be further matched to ensure the consistency of dual-chamber deposition. If it is detected that the response speeds of the above valves do not match after steps S11 to S18, corresponding measures can be taken to adjust the pipelines, valves, etc., and then test again until they match.

[0058] On the basis of matching the pneumatic valve response speeds of the first valve 231, the second valve 232, the third valve 331 and the fourth valve 332, the detection matching method of the present application can also be used to detect whether the response speeds of the first source valve and the second source valve match.

[0059] The following combination Figure 1 and Figure 3 The process of detecting and matching the first source valve and the second source valve using the valve response speed detection and matching method of the present application is described.

[0060] Step S21: Make the first main pipeline 220, the second main pipeline 320, the first source pipeline and the second source pipeline all vacuum and keep them sealed.

[0061] The air pressure in the first main pipeline 220 and the second main pipeline 320 can be observed by the measured value P1 of the first pressure gauge 272 and the measured value P2 of the second pressure gauge 372. When P1 and P2 are both 0 or close to 0, it means that the first main pipeline 220 and the first source pipeline 250 connected thereto, the second main pipeline 320 and the second source pipeline 350 connected thereto are all in a vacuum state.

[0062] Step S21: Obtain the current stable pressure value of the first main pipeline 220 and record it as Ps1. It can be understood that Ps1 is greater than 0.

[0063] Specifically, in step S21, the first valve 231 and the second valve 232 may be opened, and the pressure value in the first main pipeline 220 may be detected. When the current pressure value of the first main pipeline 220 is stable, the stable current pressure value is Ps1.

[0064] It should be noted that before step S21, the following steps may also be included:

[0065] Step S20: Make the first main pipeline 220, the second main pipeline 320, the first source pipeline and the second source pipeline all vacuum and keep them closed. After steps S11 to S18, the first main pipeline 220, the second main pipeline 320, the first source pipeline and the second source pipeline should be vacuum and keep them closed. If other steps are performed after step S18 to make the first main pipeline 220, the second main pipeline 320, the first source pipeline and the second source pipeline not in a vacuum state, step S20 needs to be performed.

[0066] In some embodiments, step S20 can be specifically implemented as follows: opening the first valve 231, the second valve 232, the first source valve 261, 262, 265, and opening the third valve 331, the fourth valve 332, the second source valve 361, 362, 365, so that the vacuum pump 120 works, so that all the gases in the first main pipeline 220, the second main pipeline 320, the first source pipeline 250, and the second source pipeline 350 are completely evacuated. It should be noted that at this time, the first source valves 263, 264 and the second source valves 363, 364 are all kept closed to prevent the gas from entering the first reaction source 240 or the second reaction source 340. Therefore, at this time, the gas in the partial branch connecting the first source pipeline 250 with the first main pipeline 220 is completely evacuated, and the gas in the partial branch connecting the second source pipeline 350 with the second main pipeline 320 is completely evacuated. In some embodiments, the branch where the first source valves 263, 264 and the second source valves 363, 364 are located is very short and can be ignored.

[0067] In some embodiments, before step S20, it also includes: setting the first flow controller 271 to the first flow rate, and setting the first regulating valve 233 to the second opening. In this embodiment, the second opening is any value between 0 and 100%, which can be set based on experience. At the same time, the second flow controller 371 is set to the first flow rate, and the second regulating valve 333 is set to the second opening. When the second opening is 100%, the second opening is equal to the first opening. Step S22: Open at least one first source valve to connect the first source pipeline 250 with the first main pipeline 220, wait for the third time t3, then close at least one first source valve, and record the current pressure value of the first main pipeline 220, recorded as P3i, i=1.

[0068] The step S22 in which the first main pipeline 220 is connected to the first source pipeline 250 is specifically to connect the first section 220a of the first main pipeline 220 to the first source pipeline 250, so that the gas can flow from the gas source 110 through the first valve 231 and then through the first source pipeline 250. Therefore, the step S23 can at least open the first source valve 261. Or open the first source valves 261 and 262 at the same time. Or open the first source valves 261, 262, and 265 at the same time. Accordingly, after waiting for the third time length t3, the opened first source valve is closed.

[0069] Step S23: After waiting for the current pressure value of the first main pipeline 220 to recover to Ps1, repeat step S22 and obtain the current pressure value of the first main pipeline 220, which is recorded as P3i, i=i+1;

[0070] Step S24: After executing step S23 n times in a loop, calculate the average value Pa1 of the current pressure values ​​of n+1 first main pipelines 220, and close the first valve 231 and the second valve 232, wherein n is a positive integer.

[0071] After step S24 is completed, the first valve 231, the second valve 232 and the first source valve on the first source pipeline 250 are all in a closed state, that is, the detection of the first set of pipelines is completed.

[0072] Step S25: Obtain the current stable pressure value of the second main pipeline 320 and record it as Ps2. It can be understood that Ps2 is greater than 0.

[0073] Specifically, in step S25, the third valve 331 and the fourth valve 332 may be opened, and when the current pressure value of the second main pipeline 320 is stable, the stable current pressure value is recorded as Ps2.

[0074] Step S26: open at least one second source valve to connect the second source pipeline with the second main pipeline 320, wait for a third time t3, then close at least one second source valve, and record the current pressure value of the second main pipeline 320, recorded as P4i, i=1.

[0075] Similar to step S22, step S26 may open at least the second source valve 361. Or simultaneously open the second source valves 361 and 362. Or simultaneously open the second source valves 361, 362, and 265. Accordingly, after waiting for the third time period t3, the opened second source valve is closed.

[0076] The third time duration t3 of step S26 is equal to the third time duration t3 of step S22.

[0077] Step S27: After waiting for the current pressure value of the second main pipeline 320 to recover to Ps2, repeat step S26 and obtain the current pressure value of the second main pipeline 320, which is recorded as P4i, i=i+1.

[0078] Step S28: After executing step S27 n times in a loop, calculate the average value Pa2 of the current pressure values ​​of n+1 second main pipelines 320;

[0079] Step S29: Calculate the difference between Pa1 and Pa2. When the difference is within a second preset range, it indicates that the response speeds of at least one first source valve and at least one second source valve match.

[0080] After the above steps S21 to S29, it is possible to detect whether the response speeds of the first source valve and the second source valve match. In the process, if the response speeds of the first source valve and the second source valve match, it is beneficial to match the dosages of the first reaction source 240 and the second reaction source 340, thereby ensuring the consistency of the dual-chamber deposition. If the result is not matched, the main pipeline, the source pipeline, the first source valve or the second source valve can be adjusted, and then tested again until the result is matched.

[0081] In some embodiments, at least during the execution of the above steps S21 to S28, the vacuum pump 120 remains turned on, that is, the vacuum pump 120 continues to perform the air extraction action.

[0082] By using the detection matching method of the present application to detect whether the valve response speeds of the main pipeline and the source pipeline match, it is possible to determine the matching of pressure and pressure drop in the dual-chamber structure, as well as the matching of the dosage of the source entering the chamber in the dual chamber. If the results are all matched, when the same flow rate is used and the opening of the first regulating valve 233 and the second regulating valve 333 are consistent, it can be considered that the amount of source carried out after entering the reaction source from the source pipeline is consistent.

[0083] In some embodiments, after confirming that the response speeds of the first valve 231, the second valve 232, the third valve 331 and the fourth valve 332 match, and the response speeds of the first source valve and the second source valve match, the detection and matching method of the present application further includes: recording one or any one of P11s, P21s, P12s, P22s, Pa1, Pa2, the first time length t1, the second time length t2 and the third time length t3 as matching parameters, and writing the matching parameters into the cross-machine process, so that all machines can obtain the matching parameters and set their own pipeline pressures according to the matching parameters. According to these embodiments, when the pipelines are the same, the detection and matching results of a set of pipelines can be applied to other pipelines, which is conducive to improving the stability of the machine.

[0084] The basic concepts have been described above. Obviously, for those skilled in the art, the above application disclosure is only an example and does not constitute a limitation of the present application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements and amendments to the present application. Such modifications, improvements and amendments are suggested in the present application, so such modifications, improvements and amendments still belong to the spirit and scope of the exemplary embodiments of the present application.

[0085] At the same time, the present application uses specific words to describe the embodiments of the present application. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in this specification does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

[0086] In some embodiments, numbers describing the number of components and attributes are used. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise specified, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in this application are approximate values, which may change according to the required characteristics of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining the digits. Although the numerical domains and parameters used to confirm the breadth of the range in some embodiments of the present application are approximate values, in specific embodiments, the setting of such numerical values ​​is as accurate as possible within the feasible range.

Claims

1. A valve response speed detection and matching method for a dual-chamber semiconductor processing system, the dual-chamber semiconductor processing system comprising a first reaction chamber and a second reaction chamber, the first reaction chamber and the second reaction chamber being connected to the same gas source, wherein: The gas source is connected to the first reaction chamber through a first main pipeline, and is connected to the second reaction chamber through a second main pipeline, and pressure detectors are respectively provided on the first main pipeline and the second main pipeline; the invention is characterized in that it comprises: Step S11: making the first main pipeline and the second main pipeline both vacuum and sealed; Step S12: opening the first valve to connect the gas source with the first main pipeline, closing the first valve after waiting for a first time, and recording the current pressure value of the first main pipeline as P11, wherein the first valve is arranged on a side of the first main pipeline close to the gas source; Step S13: opening the second valve to connect the first main pipeline with the first reaction chamber, closing the second valve after waiting for a second time, and recording the current pressure value of the first main pipeline as P12, wherein the second valve is arranged on a side of the first main pipeline close to the first reaction chamber; Step S14: looping through step S12 and step S13, and obtaining P11 and P12 updated after each loop. When the values ​​of P11 and P12 are stable, the loop ends, and the stable P11 is recorded as P11s, and the stable P12 is recorded as P12s. Step S15: opening the third valve to connect the gas source with the second main pipeline, closing the third valve after waiting for a first time, and recording the current pressure value of the second main pipeline as P21, wherein the third valve is arranged on a side of the second main pipeline close to the gas source; Step S16: opening the fourth valve to connect the second main pipeline with the second reaction chamber, closing the fourth valve after waiting for a second time, and recording the current pressure value of the second main pipeline as P22, wherein the fourth valve is arranged on a side of the second main pipeline close to the second reaction chamber; Step S17: looping through step S15 and step S16, and obtaining P21 and P22 updated after each loop. When the values ​​of P21 and P22 are stable, the loop ends, and the stable P21 is recorded as P21s, and the stable P22 is recorded as P22s. Step S18: Calculate the first difference between P11s and P21s, calculate the second difference between P12s and P22s, and determine the valve response speed based on the first difference and the second difference: when the first difference and the second difference are both within a first preset range, it indicates that the response speeds of the first valve, the second valve, the third valve and the fourth valve match.

2. The valve response speed detection and matching method according to claim 1, characterized in that: The dual-chamber semiconductor processing system further includes a reaction source, the reaction source is connected to the first reaction chamber through a first source pipeline, and is connected to the second reaction chamber through a second source pipeline, the first source pipeline is connected to the first main pipeline between the first valve and the second valve, the second source pipeline is connected to the second main pipeline between the third valve and the fourth valve, at least one first source valve is provided on the first source pipeline, and at least one second source valve is provided on the second source pipeline, and the valve response speed detection matching method further includes: Step S21: obtaining the current stable pressure value of the first main pipeline and recording it as Ps1; Step S22: opening the at least one first source valve to connect the first source pipeline with the first main pipeline, closing the at least one first source valve after waiting for a third time, and recording the current pressure value of the first main pipeline, recorded as P3i, i=1; Step S23: After waiting for the current pressure value of the first main pipeline to recover to Ps1, repeat step S22 and obtain the current pressure value of the first main pipeline, which is recorded as P3i, i=i+1; Step S24: after looping through step S23 n times, calculate the average value Pa1 of the current pressure values ​​of n+1 first main pipelines, and close the first valve and the second valve, wherein n is a positive integer; Step S25: obtaining the current stable pressure value of the second main pipeline and recording it as Ps2; Step S26: opening the at least one second source valve to connect the second source pipeline with the second main pipeline, closing the at least one second source valve after waiting for a third time, and recording the current pressure value of the second main pipeline, recorded as P4i, i=1; Step S27: After waiting for the current pressure value of the second main pipeline to recover to Ps2, repeat step S26 and obtain the current pressure value of the second main pipeline, which is recorded as P4i, i=i+1; Step S28: after looping through step S27 n times, calculate the average value Pa2 of the current pressure values ​​of n+1 second main pipelines; Step S29: Calculate the difference between Pa1 and Pa2. When the difference is within a second preset range, it indicates that the response speeds of the at least one first source valve and the at least one second source valve match.

3. The valve response speed detection and matching method according to claim 1, characterized in that: The dual-chamber semiconductor processing system further includes a first flow controller and a first regulating valve disposed on the first main pipeline, and a second flow controller and a second regulating valve disposed on the second main pipeline. Wherein, the first flow controller is arranged between the first valve and the first regulating valve, and the second flow controller is arranged between the third valve and the second regulating valve. Before the step S11, the method further includes: setting the first flow controller and the second flow controller to a first flow rate, and setting the first regulating valve and the second regulating valve to a first opening degree.

4. The valve response speed detection and matching method according to claim 2, characterized in that: The dual-chamber semiconductor processing system also includes a first flow controller and a first regulating valve arranged on the first main pipeline, and a second flow controller and a second regulating valve arranged on the second main pipeline, wherein the first flow controller is arranged between the first valve and the first regulating valve, and the second flow controller is arranged between the third valve and the second regulating valve. Before step S21, it also includes: setting the first flow controller and the second flow controller to a first flow rate, and setting the first regulating valve and the second regulating valve to a second opening.

5. The valve response speed detection and matching method according to claim 1 or 2, characterized in that: The dual-chamber semiconductor processing system further includes a vacuum pump connected to the first reaction chamber and the second reaction chamber, respectively, and the vacuum pump is used to evacuate the first main pipeline, the second main pipeline, the first source pipeline, and the second source pipeline; The valve response speed detection and matching method further includes: during the process of the valve response speed detection and matching method, the vacuum pump is kept in an open state.

6. The valve response speed detection and matching method according to claim 1 or 2, characterized in that: Also includes: Record one or any one of P11s, P21s, P12s, P22s, Pa1, Pa2, the first duration, the second duration and the third duration as matching parameters, and write the matching parameters into the cross-machine process to enable all machines to obtain the matching parameters and set their own pipeline pressures according to the matching parameters.

7. A dual-chamber semiconductor processing system, characterized in that: The invention comprises a gas source, a first reaction chamber, a second reaction chamber, a first valve, a second valve, a third valve and a fourth valve, wherein the gas source is connected to the first reaction chamber through a first main pipeline, the gas source is connected to the second reaction chamber through a second main pipeline, the first valve is arranged on a side of the first main pipeline close to the gas source, the second valve is arranged on a side of the first main pipeline close to the first reaction chamber, the third valve is arranged on a side of the second main pipeline close to the gas source, and the fourth valve is arranged on a side of the second main pipeline close to the second reaction chamber; The dual-chamber semiconductor processing system is configured to match the response speeds of the first valve and the second valve of the first main pipeline, and the third valve and the fourth valve on the second main pipeline using the valve response speed detection and matching method as described in claim 1.

8. The dual-chamber semiconductor processing system according to claim 7, wherein: Also includes a reaction source, the reaction source is connected to the first reaction chamber through a first source pipeline, the reaction source is connected to the second reaction chamber through a second source pipeline, the first source pipeline is connected to the first main pipeline between the first valve and the second valve, and the second source pipeline is connected to the second main pipeline between the third valve and the fourth valve; Wherein, at least one first source valve is provided on the first source pipeline, and at least one second source valve is provided on the second source pipeline; The dual-chamber semiconductor processing system is configured to match the valve response speeds on the first source pipeline and the second source pipeline using the valve response speed detection and matching method as described in any one of claims 2 to 6.

9. The dual-chamber semiconductor processing system according to claim 8, wherein: It also includes a first flow controller, a first pressure gauge and a first regulating valve arranged on the first main pipeline, wherein the first flow controller is arranged between the first valve and the first regulating valve, and the first pressure gauge is arranged between the first flow controller and the first regulating valve; the first source pipeline is connected to the first main pipeline at both ends of the first regulating valve.

10. The semiconductor processing system of claim 8, wherein: It also includes a second flow controller, a second pressure gauge and a second regulating valve arranged on the second main pipeline, wherein the second flow controller is arranged between the third valve and the second regulating valve, and the second pressure gauge is arranged between the second flow controller and the second regulating valve; the second source pipeline is connected to the second main pipeline at both ends of the second regulating valve.

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