High-energy laser large light spot rapid measurement device and data processing method
Directly measuring and analyzing the total power and optical power distribution of high-energy laser large spots through GaAs photovoltaic cell array and data processing board, solving the problems of low measurement accuracy and complex structure in the prior art, and achieving fast and accurate spot measurement.
Patent Information
- Application Number
- CN202411334562.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-24
- Publication Date
- 2025-02-11
AI Technical Summary
The prior art is difficult to effectively measure the total power and optical power distribution of high-energy laser large spots, and the measurement accuracy is not high, the structure is complex, the response speed is slow, and the function is single.
The GaAs photovoltaic cell array and data processing board are used to directly measure the total power of the incident laser through the photovoltaic cell array, and the optical power distribution and uniformity of the light spot are analyzed through the data processing board.
It realizes fast and accurate measurement of high-energy laser large spots, avoids the use of attenuation devices, has a simple structure and fast response speed, and can reflect changes in optical power and its distribution in real time.
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Figure CN119413274A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of laser wireless energy transmission, and relates to a high-energy laser large spot fast measurement device and a data processing method. Background Art
[0002] Laser wireless energy transmission has the advantages of high power density, long transmission distance, high electromagnetic safety, strong mobility and small equipment size, and has broad application prospects in the field of wireless power supply for long-distance, high-power and mobile devices. In the laser wireless energy transmission system, good beam quality and light intensity distribution significantly affect the photoelectric conversion efficiency of the photovoltaic array at the receiving end. However, due to the high power density and large spot area of long-distance high-power transmission, there is currently no effective measurement method for high-energy large spot.
[0003] At present, the methods for measuring light spots at home and abroad mainly include ablation method, photosensitive method, scanning method and CCD imaging method. Ablation method and photosensitive method can only make qualitative measurements. The scanning method is limited by the sampling method and is only suitable for measuring light spots of the millimeter level or even smaller, and the structure is relatively complex. The CCD imaging method requires the use of an attenuation or scattering screen, which has a complex structure and low measurement accuracy.
[0004] Patent publication number CN109900357B discloses a method and system for measuring large-scale laser spots on a target surface. The proposed method for measuring large-scale laser spots on a target surface involves slowly and uniformly moving a diffuse reflection screen placed on the target surface in a translational or rotational manner within the target surface, using a camera to capture images of the laser beam spot at different positions on the front surface of the diffuse reflection screen, and further processing the image data through a computer. This method is essentially still an indirect measurement method.
[0005] The patent with publication number CN215909980U discloses a high-power large-spot laser power test system, which is essentially no different from a conventional optical power meter. The optical power is measured point by point through the bidirectional movement of the optical power meter, but the measurement efficiency is low and the entire spot cannot be measured in real time. In addition, a bidirectional motor drive is added, which makes the structure complicated.
[0006] Patent No. CN217542138U discloses a laser target spot meter. For the target spot meter for measuring large light spots, an elastic sealing component is proposed to avoid problems such as delamination, misalignment, and even falling off between components due to vibration. Although the target spot meter described in the patent can measure large light spots at the same time, it still uses an attenuation plate, which increases the conversion link and makes the structure complicated.
[0007] Patent publication number CN113740032A discloses a large-size laser spot detection device and method, which uses multiple heat conductor units, has slow thermoelectric response, poor real-time performance, and its structure is not conducive to miniaturization.
[0008] Therefore, there is an urgent need for a high-energy large-spot measurement device and method to overcome the defects of existing methods such as small measurement area, high dependence on the attenuation system, complex structure, slow response speed, and single function. Summary of the invention
[0009] In view of this, the purpose of the present invention is to provide a fast measurement device and data processing method for a high-energy laser large spot, which can directly measure the total power of the high-energy laser and analyze performance indicators such as the light power distribution and uniformity of the spot, thereby solving the problem of measuring a high-energy large spot.
[0010] In order to achieve the above object, the present invention provides the following technical solutions:
[0011] A high-energy laser large spot rapid measurement device, which includes a photovoltaic cell array 1, a cell array substrate 2, a heat sink 3, a data processing board 5, a display terminal 6 or a host computer in the order from laser input to signal output;
[0012] The photovoltaic cell array 1 is formed by a plurality of battery cells densely arranged and bonded to a battery array substrate 2; the battery array substrate 2 is firmly connected to a heat sink 3; the positive and negative electrodes of the battery cells are connected to a data processing board 5 through through holes of the battery array substrate 2 and the heat sink 3 using battery cell output lead wires 8.
[0013] The data processing board 5 converts the output current of the battery unit into a voltage signal through a precision sampling resistor, and then performs data analysis and processing.
[0014] The data processing board 5 and the display terminal 6 are connected by a data lead-out line 7; the signal processed by the data processing board 5 is provided to the display terminal, or remotely sent to a host computer; the display terminal 6 can display information such as the total power of the laser, the spot distribution imaging, etc.
[0015] A temperature sensor is installed on the heat sink 3 to monitor the operating temperature of the battery array.
[0016] Preferably, the device further comprises a hollow housing 4 for surrounding the entire device and forming a heat dissipation convection space between the heat dissipation plate and the data processing board.
[0017] Furthermore, the data processing steps of the data processing board are:
[0018] S1: number all battery cells of the photovoltaic battery array;
[0019] S2: According to the sampling resistance of each battery cell, the terminal voltage V and current I of the resistance are measured;
[0020] S3: Calculate the relevant parameters of the battery cell according to the following formulas (1) to (5), and construct a correlation model between the output current of the battery cell and the incident light intensity;
[0021]
[0022] R s =R s * (4)
[0023]
[0024] Among them, the parameters with "*" refer to the parameters of photovoltaic cells under reference conditions; the parameters without "*" refer to the parameters of photovoltaic cells under actual working conditions; α SC Refers to the short-circuit current temperature coefficient; I ph * and I ph are the photocurrent under reference conditions and actual working conditions, I0 is the reverse saturation current, G* and G are the light intensities under reference conditions and actual working conditions, respectively; E g * and E g are the bandgap width of the battery material under reference conditions and actual working conditions, E g (0) is the bandgap width of the battery material at 0K; α and β are temperature coefficients, which are related to the battery material; R s * and R s are the equivalent series resistance under reference conditions and actual working conditions respectively; R sh * and R sh are the equivalent parallel resistance under reference conditions and actual working conditions, respectively;
[0025] S4: I obtained in step S3 ph ,I0,R s ,R sh Substituting the same parameters into formula (6), we get the relationship between the terminal voltage V, current I and input light intensity G of the resistor;
[0026]
[0027] Among them, the ideal factor n is between 1 and 2, and the specific value is set according to the material quality, manufacturing process, working environment, etc.; k is the Boltzmann constant; T is the temperature of the photovoltaic cell; q is the charge of the elementary charge;
[0028] S5: Substitute the terminal voltage V and current I of each battery cell obtained in step S2 into formula (6) respectively, and obtain the input light intensity G of each battery cell according to the nonlinear solution method. After calculating the input light intensity of each battery cell, a light intensity matrix corresponding to the spatial position of each battery cell is formed;
[0029] S6: Use cubic spline interpolation on the light intensity matrix to obtain a continuous light intensity image of the entire light spot; accumulate the incident light intensity of all battery cells to obtain the total incident power, and perform uniformity analysis based on the light intensity distribution.
[0030] The beneficial effects of the present invention are:
[0031] 1) The present invention uses a GaAs photovoltaic cell array as a photoelectric conversion device for lasers, which can withstand high-energy lasers that are several times more powerful than sunlight, thereby being able to directly measure incident lasers and avoid the use of attenuation devices.
[0032] 2) The present invention uses a large-area densely distributed array of photovoltaic cells, which can simultaneously measure the power of the entire large light spot at a long distance, avoiding the low efficiency of point-by-point measurement of traditional optical power meters, and can reflect the changes in the overall optical power and its distribution in real time.
[0033] 3) The data processing method adopted by the present invention can overcome the disadvantage of discrete distribution of battery cells, obtain continuous spot images, and calculate total power, power distribution and its uniformity, which greatly expands the measurement range and result presentation capability of the present invention.
[0034] Other advantages, objectives and features of the present invention will be described in the following description to some extent, and to some extent, will be obvious to those skilled in the art based on the following examination and study, or can be taught from the practice of the present invention. The objectives and other advantages of the present invention can be realized and obtained through the following description. BRIEF DESCRIPTION OF THE DRAWINGS
[0035] In order to make the purpose, technical solutions and advantages of the present invention more clear, the present invention will be described in detail below in conjunction with the accompanying drawings, wherein:
[0036] Figure 1 It is a schematic diagram of the structure of the high-energy laser large spot rapid measurement device of the present invention;
[0037] Figure 2 This is a schematic diagram of the layout of the photovoltaic cell array of the present invention;
[0038] Figure 3 This is a light spot effect diagram formed by the present invention. DETAILED DESCRIPTION
[0039] The following describes the embodiments of the present invention by specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the illustrations provided in the following embodiments only illustrate the basic concept of the present invention in a schematic manner, and the following embodiments and features in the embodiments can be combined with each other without conflict.
[0040] Among them, the drawings are only used for illustrative explanations, and they only represent schematic diagrams rather than actual pictures, and should not be understood as limitations on the present invention. In order to better illustrate the embodiments of the present invention, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of actual products. For those skilled in the art, it is understandable that some well-known structures and their descriptions in the drawings may be omitted.
[0041] The same or similar numbers in the drawings of the embodiments of the present invention correspond to the same or similar parts; in the description of the present invention, it should be understood that if the terms "upper", "lower", "left", "right", "front", "rear", etc. indicate the orientation or position relationship, they are based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation. Therefore, the terms describing the position relationship in the drawings are only used for illustrative purposes and cannot be understood as limiting the present invention. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to specific circumstances.
[0042] See also Figure 1 to Figure 3 , a high-energy laser large spot fast measurement device, such as Figure 1 As shown, from the laser input end to the signal output end, it includes a photovoltaic cell array 1, a cell array substrate 2, a heat sink 3, a cell output lead 8, a data processing board 5, a data lead 7 and a display terminal 6 in sequence.
[0043] The photovoltaic array is formed by a number of battery units densely arranged and laid on a battery array substrate. Figure 2A circular battery array layout scheme is given, but the device described in the present invention is not limited to a circular battery array, and other shapes of battery array layouts can also be adopted. The layout of the battery cells can be arranged horizontally and vertically, or in a ring-shaped arrangement, as well as other layout schemes. The positive and negative electrodes of each battery are connected to the sampling resistor of the data processing board through the through holes on the substrate and the heat sink by the output leads. The heat sink is close to the substrate, and the heat sink and the substrate are coated with thermal conductive material and fastened with screws. The output leads of the battery cells are arranged between the heat sink and the data processing board, and a heat dissipation convection space is formed to dissipate heat to the outside through the hollow shell.
[0044] The data processing board converts the output current of the battery cell into a voltage signal through a precision sampling resistor, and further processes it after signal conditioning. The processed signal is provided to the display terminal or sent remotely to the host computer. The display terminal can display information such as the total power of the laser, the spot distribution imaging, etc.
[0045] According to the wavelength distribution of the incident laser, the cell can be made of Si, GaAs and multi-junction photoelectric conversion materials.
[0046] After obtaining the output voltage data of the photovoltaic cell, the high-energy laser large spot fast measurement device of the present invention further processes the data through the following steps:
[0047] The first step is to number all the battery cells of the photovoltaic battery array.
[0048] Step 2: According to the sampling resistance of each battery cell, measure the terminal voltage V and current I of the resistance.
[0049] Step 3: Calculate the relevant parameters of the photovoltaic cell according to the following equations (1)-(5) and construct a correlation model between the output current of the photovoltaic cell unit and the incident light intensity.
[0050]
[0051] The parameters with “*” refer to the parameters of the photovoltaic cell under reference conditions; the parameters without “*” refer to the parameters of the photovoltaic cell under actual working conditions. The reference condition refers to the light intensity of 1000W / m 2 , the temperature is 25℃. SC Refers to the short-circuit current temperature coefficient. Different battery materials have different temperature coefficients. For example, the short-circuit current temperature coefficient of single-crystal silicon can be 0.00175A / K. Iph and Iph* are the photocurrents under actual working conditions and reference conditions, respectively. G and G* are the light intensities under actual working conditions and reference conditions, respectively.
[0052]
[0053] Among them, E g * and Eg are the bandgap widths of battery materials under reference conditions and actual working conditions, respectively. The bandgap width is related to temperature, and the bandgap width at temperature T can be obtained according to the following formula (3):
[0054]
[0055] Among them, E g (0) is the bandgap width of the battery material at 0K, such as the bandgap width of Si material can be 1.17eV; α and β are temperature coefficients, which are related to the battery material. For example, the temperature coefficient of Si material can be α = 4.73×10 -4 eV / K, β=636K.
[0056] Light intensity and temperature have little effect on the series resistance, so the series resistance is assumed to be a constant, which is always equal to the series resistance under reference conditions:
[0057] R s =R s * (4)
[0058] According to the experimental data provided by the Standards and Technology Research Institute, the parallel resistance and light intensity satisfy equation (5):
[0059]
[0060] Step 4: I obtained in step 3 ph ,I0,R s ,R sh Substituting the parameters into equation (6), we can obtain the relationship between the cell output voltage V, output current I and input light intensity G.
[0061]
[0062] Among them, I ph is the photocurrent, I0 is the reverse saturation current, R s is the equivalent series resistance, R sh is the equivalent parallel resistance. In the formula, the ideal factor is between n=1 and 2, and the specific value is set according to the material quality, manufacturing process, working environment, etc.; k is the Boltzmann constant; T is the temperature of the photovoltaic cell; q is the charge of the elementary charge.
[0063] Step 5: Substitute the output current I and voltage V of each battery obtained in the second step into equation (6) respectively, and obtain the input light intensity G of the battery according to the nonlinear solution method. After calculating the input light intensity of each battery, form a light intensity matrix corresponding to the spatial position of the battery.
[0064] Step 6: Use cubic spline interpolation on the light intensity matrix to obtain a continuous light intensity image of the entire light spot, such as Figure 3 The incident light intensity of all battery cells is accumulated to obtain the total incident power, and the uniformity analysis is carried out based on the light intensity distribution.
[0065] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the purpose and scope of the technical solution, which should be included in the scope of the claims of the present invention.
Claims
1. A high-energy laser large spot rapid measurement device, characterized in that: In order from laser input to signal output, it includes a photovoltaic cell array (1), a cell array substrate (2), a heat sink (3) and a data processing board (5); The photovoltaic cell array (1) is formed by a plurality of battery cells which are densely arranged and bonded to a battery array substrate (2); the battery array substrate (2) is tightly connected to a heat sink (3); the positive and negative electrodes of the battery cells are connected to a data processing board (5) through through holes of the battery array substrate (2) and the heat sink (3) using battery cell output lead wires (8).
2. The high-energy laser large spot rapid measurement device according to claim 1 is characterized in that: The data processing board (5) converts the output current of the battery unit into a voltage signal through a sampling resistor, and then performs data analysis and processing.
3. The high-energy laser large spot rapid measurement device according to claim 1 is characterized in that: The device also includes a display terminal (6) or a host computer; the data processing board (5) and the display terminal (6) are connected by a data lead-out line (7); the signal processed by the data processing board (5) is provided to the display terminal, or is remotely sent to the host computer.
4. The high-energy laser large spot rapid measurement device according to claim 1 is characterized in that: A temperature sensor is installed on the heat sink (3) for monitoring the operating temperature of the battery array.
5. The high-energy laser large spot rapid measurement device according to claim 1 is characterized in that: The device also includes a hollow shell (4) which is used to surround the entire device and form a heat dissipation convection space between the heat dissipation plate and the data processing board.
6. The high-energy laser large spot rapid measurement device according to any one of claims 1 to 3, characterized in that: The data processing steps of the data processing board are as follows: S1: number all battery cells of the photovoltaic battery array; S2: According to the sampling resistance of each battery cell, the terminal voltage V and current I of the resistance are measured; S3: Calculate the relevant parameters of the battery cell according to the following formulas (1) to (5), and construct a correlation model between the output current of the battery cell and the incident light intensity; R s =R s * (4) Among them, "*" refers to the parameters of photovoltaic cells under reference conditions; "without" refers to the parameters of photovoltaic cells under actual working conditions; α SC Refers to the short-circuit current temperature coefficient; I ph * and I ph are the photocurrent under reference conditions and actual working conditions, I0 is the reverse saturation current, G* and G are the light intensities under reference conditions and actual working conditions, respectively; E g * and E g are the bandgap width of the battery material under reference conditions and actual working conditions, E g (0) is the bandgap width of the battery material at 0K; α and β are temperature coefficients, which are related to the battery material; R s * and R s are the equivalent series resistance under reference conditions and actual working conditions respectively; R sh * and R sh are the equivalent parallel resistance under reference conditions and actual working conditions, respectively; S4: I obtained in step S3 ph ,I0,R s ,R sh Substituting the same parameters into formula (6), we get the relationship between the terminal voltage V, current I and input light intensity G of the resistor; Among them, the ideal factor n is between 1 and 2; k is the Boltzmann constant; T is the temperature of the photovoltaic cell; q is the charge of the elementary charge; S5: Substitute the terminal voltage V and current I of each battery cell obtained in step S2 into formula (6) respectively, and obtain the input light intensity G of each battery cell according to the nonlinear solution method. After calculating the input light intensity of each battery cell, a light intensity matrix corresponding to the spatial position of each battery cell is formed; S6: Use cubic spline interpolation on the light intensity matrix to obtain a continuous light intensity image of the entire light spot; accumulate the incident light intensity of all battery cells to obtain the total incident power, and perform uniformity analysis based on the light intensity distribution.
Citation Information
Patent Citations
A method and system for measuring large-scale laser spots on a target surface
CN109900357B
Large-size laser spot detection device and method
CN113740032A
High-power large-spot laser power test system
CN215909980U
Laser target spot instrument
CN217542138U