Dielectric integrated antenna equipment and preparation method thereof

Abstract

The invention provides dielectric integrated antenna equipment and a preparation method thereof, which can be applied to the technical field of integrated antennas. The apparatus includes: a bottom metal layer; the first dielectric layer is stacked above the bottom metal layer, and the first dielectric layer comprises a metal structure; the middle metal layer is stacked above the first dielectric layer, and the middle metal layer comprises a feed slot; the second dielectric layer is stacked above the middle metal layer, a concave cavity is formed in the second dielectric layer, the concave cavity is arranged above the feed gap, a plurality of dielectric blocks are arranged in the concave cavity, gaps exist between the adjacent dielectric blocks, and the dielectric integrated antenna is formed by the plurality of dielectric blocks and the gaps between the adjacent dielectric blocks; wherein the feed gap is used for coupling an electromagnetic signal fed from the metal structure, and the dielectric integrated antenna is used for radiating electromagnetic energy corresponding to the electromagnetic signal to a free space.

Description

Technical Field

[0001] The present disclosure relates to the technical field of integrated antennas, and more specifically, to a dielectric integrated antenna device and a preparation method thereof. Background Art

[0002] The millimeter wave terahertz frequency band has rich spectrum resources and is considered to be one of the candidate frequency bands for the new generation of mobile communication technology. It has broad application prospects. In recent years, researchers have explored it in the fields of military, biomedicine, communication, and cultural relics protection. Common millimeter wave terahertz antennas include photoconductive antennas, horn antennas, lens antennas, and antennas on chip (Antennas onChip, AoCs). At the same time, dielectric integrated antennas have low losses in high frequency bands and are more suitable for the design of terahertz frequency band antennas.

[0003] In the process of realizing the concept of the present disclosure, the inventors found that the antennas in the related art have high integration difficulty, poor performance and difficulty in meeting the application requirements of the millimeter wave terahertz frequency band when used in the millimeter wave terahertz frequency band. Summary of the invention

[0004] In view of this, the present disclosure provides a dielectric integrated antenna device for use in the millimeter wave terahertz frequency band and a preparation method thereof.

[0005] One aspect of the present disclosure provides a dielectric integrated antenna device, including:

[0006] A bottom metal layer; a first dielectric layer stacked on the bottom metal layer, the first dielectric layer including a metal structure; an intermediate metal layer stacked on the first dielectric layer, the intermediate metal layer including a feeding slot; a second dielectric layer stacked on the intermediate metal layer, the second dielectric layer having a concave cavity, the concave cavity being arranged above the feeding slot, wherein the concave cavity includes a plurality of dielectric blocks, there are gaps between adjacent dielectric blocks, and the gaps between the plurality of dielectric blocks and adjacent dielectric blocks constitute a dielectric integrated antenna; wherein the feeding slot is used to couple the electromagnetic signal fed from the metal structure, and the dielectric integrated antenna is used to radiate electromagnetic energy corresponding to the electromagnetic signal into free space.

[0007] According to an embodiment of the present disclosure, a frame-shaped metal strip is provided at the edge of the concave cavity, wherein the edge of the concave cavity represents the connection between the upper surface of the second dielectric layer and the concave cavity.

[0008] According to an embodiment of the present disclosure, a metal wall is provided on the inner side of the concave cavity.

[0009] According to an embodiment of the present disclosure, the metal structure includes an electromagnetic wave conducting structure corresponding to a predetermined rule.

[0010] According to an embodiment of the present disclosure, the electromagnetic wave conducting structure and the feeding slot constitute a feeding unit, and the feeding unit is used to excite the resonant mode of the dielectric integrated antenna.

[0011] According to an embodiment of the present disclosure, the sizes of the dielectric blocks are different, and the shape of the dielectric blocks includes one of the following: a cuboid, a cylinder, and a hemisphere.

[0012] According to an embodiment of the present disclosure, the shape of the feeding slot includes one of the following: rectangular, I-shaped.

[0013] According to an embodiment of the present disclosure, the gap includes a longitudinal gap and a lateral gap.

[0014] Another aspect of the present disclosure provides a method for preparing a dielectric integrated antenna device, comprising:

[0015] A photoresist is coated on the first surface of the second dielectric layer to obtain an etching mask; a layer of metal is sputtered on the etching mask, and the metal is electroplated to obtain an intermediate metal layer; a dielectric material is coated on the surface of the intermediate metal layer to obtain a first dielectric layer; a layer of metal is electroplated on the dielectric layer to obtain a bottom metal layer; a second surface of the second dielectric layer is subjected to a pattern metallization process and a dielectric etching process to obtain a target dielectric integrated antenna.

[0016] According to an embodiment of the present disclosure, the second surface of the second dielectric layer is subjected to a graphic metallization process and a dielectric etching process to obtain a target dielectric integrated antenna, including: thinning the second surface of the second dielectric layer to obtain a thinned second dielectric layer; performing a graphic metallization process on the thinned second dielectric layer to obtain a metal strip; and performing a deep silicon etching process on the thinned second dielectric to obtain a concave cavity and a dielectric block.

[0017] According to an embodiment of the present disclosure, a concave cavity is opened above the feeding slot in the second dielectric layer, and a plurality of dielectric blocks are arranged in the cavity. Since there is a gap between adjacent dielectric blocks, the gap and the dielectric block together constitute a dielectric integrated antenna. The electromagnetic signal is fed into the antenna device through the metal structure in the dielectric layer, coupled through the feeding slot, and the resonant mode of the dielectric integrated antenna is excited. The dielectric integrated antenna radiates the electromagnetic energy corresponding to the electromagnetic signal into the free space, which can extend the technical effect of the impedance bandwidth. At the same time, the use of a stacked structure reduces the space, and has a high degree of integration while ensuring performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0019] Figure 1 A schematic diagram of a basic dielectric integrated antenna structure is shown schematically.

[0020] Figure 2a A schematic diagram of a conventional dielectric integrated antenna structure is shown schematically.

[0021] Figure 2b The figure schematically shows a physical diagram of a traditional dielectric integrated antenna.

[0022] Figure 3 A schematic diagram of a dielectric integrated antenna device according to an embodiment of the present disclosure is schematically shown.

[0023] Figure 4 The gain-frequency curve of the dielectric integrated antenna device according to the embodiment of the present disclosure is schematically shown.

[0024] Figure 5 The radiation efficiency-frequency curve of the dielectric integrated antenna device according to the embodiment of the present disclosure is schematically shown.

[0025] Figure 6 The radiation pattern of the dielectric integrated antenna device according to the embodiment of the present disclosure is schematically shown.

[0026] Figure 7 A schematic diagram of an electromagnetic wave conducting structure according to an embodiment of the present disclosure is schematically shown.

[0027] Figure 8 A schematic top view of a dielectric integrated antenna device according to an embodiment of the present disclosure is schematically shown.

[0028] Fig. 9 A schematic diagram schematically shows a plurality of dielectric blocks of different sizes according to an embodiment of the present disclosure.

[0029] Fig.10 A three-dimensional schematic diagram of a dielectric integrated antenna device according to another embodiment of the present disclosure is schematically shown.

[0030] Fig.11 The overall schematic diagram of a dielectric integrated antenna device according to another embodiment of the present disclosure is schematically shown.

[0031] Fig.12 A partial schematic diagram of a dielectric integrated antenna device according to another embodiment of the present disclosure is schematically shown.

[0032] Fig.13 A front view of a dielectric-integrated antenna device according to another embodiment of the present disclosure is schematically shown.

[0033] Fig.14 A top view of a dielectric-integrated antenna device according to another embodiment of the present disclosure is schematically shown.

[0034] Fig.15A schematic diagram of an electromagnetic wave conducting structure according to another embodiment of the present disclosure is schematically shown.

[0035] Fig.16 A schematic diagram of a plurality of dielectric blocks of the same size according to another embodiment of the present disclosure is schematically shown.

[0036] Fig.17 The gain-frequency curve of a dielectric integrated antenna device according to another embodiment of the present disclosure is schematically shown.

[0037] Fig.18 The radiation efficiency-frequency curve of the dielectric integrated antenna device according to the embodiment of the present disclosure is schematically shown.

[0038] Fig.19 The radiation pattern of the dielectric integrated antenna device according to the embodiment of the present disclosure is schematically shown.

[0039] Fig. 20 The invention schematically shows a method for preparing a dielectric integrated antenna device according to an embodiment of the present disclosure.

[0040] Fig.21 A schematic diagram of preparing a first direction of a dielectric integrated antenna device according to an embodiment of the present disclosure is schematically shown.

[0041] Fig. 22 A schematic diagram of preparing a second direction of a dielectric integrated antenna device according to an embodiment of the present disclosure is schematically shown. DETAILED DESCRIPTION

[0042] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present disclosure. In the following detailed description, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0043] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise", "include", etc. used herein indicate the existence of the features, steps, operations and / or components, but do not exclude the existence or addition of one or more other features, steps, operations or components.

[0044] All terms (including technical and scientific terms) used herein have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0045] When using expressions such as "at least one of A, B, and C, etc.", they should generally be interpreted according to the meaning of the expression commonly understood by those skilled in the art (for example, "a system having at least one of A, B, and C" should include but is not limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc.).

[0046] In the embodiments of the present disclosure, the collection, updating, analysis, processing, use, transmission, provision, disclosure, storage, etc. of the data involved (for example, including but not limited to user personal information) are in compliance with the provisions of relevant laws and regulations, are used for legitimate purposes, and do not violate public order and good morals. In particular, necessary measures are taken for user personal information to prevent illegal access to user personal information data and maintain the security of user personal information, network security, and national security.

[0047] In the embodiments of the present disclosure, the user's authorization or consent is obtained before obtaining or collecting the user's personal information.

[0048] Terahertz (THz) waves usually refer to electromagnetic waves with a frequency of 0.1 THz ~10 THz and a wavelength of 3mm ~ 0.03mm. Terahertz antennas play an important role in terahertz systems. In the transmitting link, the terahertz antenna converts the guided waves in the circuit into electromagnetic waves radiated in space, and vice versa in the receiving link. Working bandwidth, gain, and radiation efficiency are important indicators for evaluating antenna performance.

[0049] As a commonly used millimeter-wave terahertz antenna, the performance of the photoconductive antenna needs to be improved due to factors such as large material loss, low photoelectric conversion efficiency, and low output power; the horn antenna has the advantages of simple structure, wide operating frequency band and high gain, but it is difficult to integrate and miniaturize; the on-chip antenna can avoid the design of the matching network, but is limited by semiconductor process materials and has performance problems such as narrow operating bandwidth, low gain and low efficiency; the lens antenna has high gain and good directivity, but its size is relatively large, which is not conducive to integration.

[0050] Dielectric resonator antenna (DRA) is usually made of materials with high relative dielectric constant and low loss. It has the advantages of small size, small surface wave loss, high radiation efficiency, and wide operating bandwidth. At the same time, dielectric resonator antenna has high flexibility. For a rectangular dielectric resonator antenna of a given dielectric material, the resonant frequency of different modes can be arbitrarily changed by adjusting its three-dimensional size.

[0051] In order to better reflect the structure of the dielectric resonant antenna, the following will be Figure 1~Figure 2b The traditional dielectric integrated antenna is further elaborated.

[0052] Figure 1 A schematic diagram of a basic dielectric integrated antenna structure is shown schematically.

[0053] like Figure 1 As shown, the embodiment 100 shows the overall view and the front view of the basic rectangular dielectric integrated antenna structure. The basic dielectric integrated antenna includes a dielectric resonant antenna 110, a dielectric layer 120, a coupling slot 130, a bottom metal layer 140, a metal ground plane 150, and a feed line 160.

[0054] Figure 2a A schematic diagram of a conventional dielectric integrated antenna structure is shown schematically.

[0055] like Figure 2a As shown, the embodiment 200 includes a first dielectric substrate 210, a second dielectric substrate 220 and a dielectric resonant antenna 230 stacked in sequence, the second dielectric substrate 220 includes a feed line 221, a metal ground plane 222, a coupling slot 223 and an SMA interface 240 connected to the second dielectric substrate 220, and the dielectric resonant antenna 230 is composed of a plurality of dielectric blocks of the same size.

[0056] Among them, L s Denotes the length of the coupling gap, W s Indicates the width of the coupling gap, L d Indicates the horizontal length of the feeder, G a represents the length of the first dielectric substrate, h s1 represents the thickness of the first dielectric substrate, h s2 represents the thickness of the second dielectric substrate, H represents the height of the dielectric resonant antenna, W represents the height of the dielectric block, L represents the length of the dielectric block, and W a represents the lateral gap of the dielectric block, g represents the longitudinal gap of the dielectric block, L a Indicates the length of the media block.

[0057] Figure 2b The figure schematically shows a physical diagram of a traditional dielectric integrated antenna.

[0058] like Figure 2b As shown, a physical object 201 of a traditional dielectric integrated antenna structure and a physical object 202 of a second dielectric substrate are respectively shown.

[0059] Above Figure 1~Figure 2b The existing dielectric integrated antennas shown are all coupled and fed through a feed line and a coupling slot and radiate energy through a dielectric resonant antenna. Figure 2a The antenna structure shown is relative to Figure 1The antenna structure shown has a wider operating bandwidth and a more stable radiation pattern.

[0060] In order to give full play to the advantages of the terahertz frequency band, it is necessary to design dielectric integrated antennas with a wider working frequency band. Traditional feeding methods may cause greater losses and reflections. At the same time, with the development of terahertz technology, higher requirements are placed on the integration and miniaturization of antennas. There are still some challenges in further reducing the size of dielectric integrated antennas and improving their integration in the terahertz frequency band. In addition, due to the shorter wavelength of electromagnetic waves in the terahertz frequency band, higher processing accuracy is required for the antenna. Even a small processing error will have a significant impact on the antenna performance, such as resonant frequency offset.

[0061] In view of this, an embodiment of the present disclosure provides a dielectric integrated antenna device, comprising: a bottom metal layer; a first dielectric layer, stacked on the bottom metal layer, the first dielectric layer including a metal structure; an intermediate metal layer, stacked on the first dielectric layer, the intermediate metal layer including a feeding slot; a second dielectric layer, stacked on the intermediate metal layer, the second dielectric layer being provided with a concave cavity, the concave cavity being arranged above the feeding slot, wherein the concave cavity includes a plurality of dielectric blocks, there are gaps between adjacent dielectric blocks, and the gaps between the plurality of dielectric blocks and the adjacent dielectric blocks constitute a dielectric integrated antenna; wherein the feeding slot is used to couple the electromagnetic signal fed from the metal structure, and the dielectric integrated antenna is used to radiate electromagnetic energy corresponding to the electromagnetic signal into free space.

[0062] Figure 3 A schematic diagram of a dielectric integrated antenna device according to an embodiment of the present disclosure is schematically shown.

[0063] like Figure 3 As shown, the device 300 includes a bottom metal layer 310 , a first dielectric layer 320 , an intermediate metal layer 330 , a second dielectric layer 340 , a concave cavity 350 , a dielectric integrated antenna 360 and a top metal layer 370 , wherein the dielectric integrated antenna 360 includes a plurality of dielectric blocks 361 .

[0064] According to an embodiment of the present disclosure, the first dielectric layer 320 is stacked on the bottom metal layer 310, and the first dielectric layer 320 includes a metal structure 321, which enables the dielectric layer to have a feeding characteristic for the transmission of electromagnetic signals. The middle metal layer 330 is stacked on the first dielectric layer 320, and the middle metal layer 330 includes a feeding gap. The material of the first dielectric layer can be a dielectric material such as benzocyclobutene (BCB) or polyimide (PI).

[0065] According to an embodiment of the present disclosure, a second dielectric layer 340 is stacked above the intermediate metal layer 330. The material of the second dielectric layer may be a silicon plate. A concave cavity 350 is provided in the second dielectric layer 340. The concave cavity 350 is arranged above the feeding gap. The concave cavity 350 includes a plurality of dielectric blocks. There are gaps between adjacent dielectric blocks. The gaps between the plurality of dielectric blocks and the adjacent dielectric blocks constitute a dielectric integrated antenna 360.

[0066] It should be noted that Figure 3 The number of dielectric blocks in the figure is only for illustration. In actual application, the number of dielectric blocks can be increased or decreased according to application requirements.

[0067] According to an embodiment of the present disclosure, the feeding slot is used to couple the electromagnetic signal fed from the metal structure, and the dielectric integrated antenna is used to radiate electromagnetic energy corresponding to the electromagnetic signal into free space.

[0068] According to the embodiments of the present disclosure, based on experimental data, when the input reflection coefficient is -15dB, the impedance bandwidth of the device 300 can reach 30.6GHz. Compared with the dielectric integrated antenna in Embodiment 100 and Embodiment 200, the impedance bandwidth is well expanded.

[0069] In order to better demonstrate the effect of the dielectric integrated antenna device of the embodiment of the present disclosure, the following will be Figure 4~Figure 6 The gain, radiation efficiency, and radiation direction of the antenna in Example 300 are described respectively.

[0070] Figure 4 The gain-frequency curve of the dielectric integrated antenna device according to the embodiment of the present disclosure is schematically shown.

[0071] like Figure 4 As shown, the horizontal axis represents the frequency, and the vertical axis on the left represents the input reflection coefficient S 11 , the vertical axis on the right represents the gain.

[0072] According to an embodiment of the present disclosure, the input reflection coefficient S of the dielectric integrated antenna device is 11 In the gain variation curve with frequency, the gain variation is less than 2.6dB and the peak gain can reach 9.36 dBi.

[0073] Figure 5 The radiation efficiency-frequency curve of the dielectric integrated antenna device according to the embodiment of the present disclosure is schematically shown.

[0074] like Figure 5 As shown, the ordinate represents radiation efficiency and the abscissa represents frequency.

[0075] According to the embodiments of the present disclosure, the radiation efficiency at any frequency is greater than 0.86, and the maximum radiation efficiency is about 0.88.

[0076] Figure 6 The radiation pattern of the dielectric integrated antenna device according to the embodiment of the present disclosure is schematically shown.

[0077] like Figure 6 As shown, the vertical axis is the gain. It can be clearly seen that the radiation patterns in the horizontal and vertical directions have good symmetry, and can achieve a maximum gain of 8.5 dBi and a front-to-back ratio of 18 dB.

[0078] According to an embodiment of the present disclosure, a concave cavity is opened above the feeding slot in the second dielectric layer, and a plurality of dielectric blocks are arranged in the cavity. Since there is a gap between adjacent dielectric blocks, the gap and the dielectric block together constitute a dielectric integrated antenna. The electromagnetic signal is fed into the antenna device through the metal structure in the dielectric layer, coupled through the feeding slot, and the resonant mode of the dielectric integrated antenna is excited. The dielectric integrated antenna radiates the electromagnetic energy corresponding to the electromagnetic signal into the free space, which can extend the technical effect of the impedance bandwidth. At the same time, the use of a stacked structure reduces the space, and has a high degree of integration while ensuring performance.

[0079] According to an embodiment of the present disclosure, the metal structure includes an electromagnetic wave conducting structure corresponding to a predetermined rule.

[0080] For example, the electromagnetic wave conducting structure may be a plurality of metal holes arranged according to a predetermined rule, and the plurality of metal holes are used to constitute the electromagnetic wave conducting structure.

[0081] According to an embodiment of the present disclosure, the electromagnetic wave conduction structure may be a grounded coplanar waveguide (GCPW), in which the metal structure and the metal signal line are coplanar to form a transmission waveguide, and the impedance of the GCPW may be controlled by adjusting the width and spacing of the metal signal line and the metal hole to achieve impedance matching with the DRA.

[0082] According to the embodiments of the present disclosure, the metal structure may also be a metal wall, but in actual preparation, metal holes are simpler and are conducive to mass production.

[0083] Figure 7 A schematic diagram of an electromagnetic wave conducting structure according to an embodiment of the present disclosure is schematically shown.

[0084] like Figure 7 As shown, the electromagnetic wave conducting structure 710 is located in the dielectric layer above the bottom metal layer 310. The metal signal line width Ws may be 55 μm, and the spacing width Wg between the metal signal line and the bottom metal layer may be 20 μm.

[0085] According to an embodiment of the present disclosure, the electromagnetic wave conducting structure and the feeding slot constitute a feeding unit, and the feeding unit is used to excite the resonant mode of the dielectric integrated antenna.

[0086] According to the embodiments of the present disclosure, the resonance mode may be a high-order mode resonance mode, specifically including TE 111 and TE 131 etc. modes.

[0087] According to the embodiments of the present disclosure, the feeding unit is the core structure of the entire dielectric integrated antenna device, and is used to feed the electromagnetic signal source into the device. In addition, microstrip line direct coupling feeding or coaxial probe feeding can also be used.

[0088] According to an embodiment of the present disclosure, the shape of the feeding slot includes one of the following: rectangular, I-shaped.

[0089] According to the embodiments of the present disclosure, a feeding unit is formed by an electromagnetic wave conduction structure composed of metal holes and other metal structures in the first dielectric layer and metallic properties and a feeding slot. Efficient transmission of electromagnetic signals can be achieved by optimizing the arrangement rules and sizes of the metal holes and related parameters of the feeding slot. The target resonant mode of the dielectric integrated antenna can be stimulated according to actual needs, which is conducive to meeting the requirements of modern communication systems for high efficiency, high gain and wide bandwidth of dielectric integrated antenna equipment.

[0090] According to an embodiment of the present disclosure, a frame-shaped metal strip is provided at the edge of the concave cavity, wherein the edge of the concave cavity represents the connection between the upper surface of the second dielectric layer and the concave cavity.

[0091] According to an embodiment of the present disclosure, the top metal layer 360 in embodiment 300 can be a frame-shaped metal strip, which can be prepared using metal copper. The frame-shaped metal strip corresponds to the shape of the concave cavity, including a first strip width corresponding to the wide side of the concave cavity and a second strip width corresponding to the long side of the concave cavity, and the first strip width and the second strip width should not be too wide.

[0092] In order to better understand the positional relationship between the frame-shaped metal strip, the silicon plate and the concave cavity, the following will be Figure 8 Provide a detailed explanation.

[0093] Figure 8 A schematic top view of a dielectric integrated antenna device according to an embodiment of the present disclosure is schematically shown.

[0094] like Figure 8 As shown, the embodiment 800 includes a feeding slot 331 , a dielectric integrated antenna 360 , a frame-shaped metal strip 810 and a metal hole 820 .

[0095] The feeding slot width Wslot may be 11 μm, the feeding slot length Lslot may be 426 μm, the first strip width w1 may be 75 μm, and the first strip width w2 may be 40 μm.

[0096] According to an embodiment of the present disclosure, a frame-shaped metal strip is provided at the edge of the concave cavity, and unnecessary radiation can be reduced by adjusting the first strip width and the second strip width, so as to effectively reduce the side lobe level and further improve the stability of the radiation direction of the dielectric integrated antenna device.

[0097] According to an embodiment of the present disclosure, a metal wall is provided on the inner side of the concave cavity.

[0098] According to the embodiments of the present disclosure, the inner side of the concave cavity is surrounded by metal walls. The material and thickness of the metal walls should take into account the environment, antenna radiation efficiency, corrosion resistance efficiency, etc. The bottom of the concave cavity still retains the same material of the silicon plate.

[0099] According to an embodiment of the present disclosure, metal walls are arranged around the inner side of the concave cavity, so that the electromagnetic energy fed into the device by the feeding unit is concentrated on the dielectric block in the concave cavity, avoiding excessive consumption by the silicon plate, and further improving the radiation efficiency of the antenna.

[0100] According to an embodiment of the present disclosure, the sizes of the dielectric blocks are different, the material of the dielectric blocks includes silicon, and the shape of the dielectric blocks includes one of the following: a cuboid, a cylinder, and a hemisphere.

[0101] According to the embodiments of the present disclosure, the radiation performance of the dielectric integrated antenna varies with the size of each dielectric block. Through the non-uniform dielectric blocks, the dielectric integrated antenna can achieve more frequency resonances, thereby expanding the antenna bandwidth.

[0102] According to an embodiment of the present disclosure, the gap includes a longitudinal gap and a lateral gap.

[0103] Fig. 9 A schematic diagram schematically shows a plurality of dielectric blocks of different sizes according to an embodiment of the present disclosure.

[0104] like Fig. 9 As shown, the embodiment 900 includes two dielectric blocks of different sizes, which are hereinafter referred to as a first dielectric block and a second dielectric block.

[0105] Among them, the lengths of the two dielectric blocks of different sizes are consistent, the dielectric block length wDRA can be 408μm, the first dielectric block width lDRA1 can be 100μm, the second dielectric block width lDRA2 can be 22μm, the dielectric block height hDRA can be 158μm, the lateral gap wgap between adjacent dielectric blocks can be 34μm, and the longitudinal distance between adjacent dielectric blocks lgap1=lgap2=5μm.

[0106] According to the embodiments of the present disclosure, the impedance bandwidth can be increased by adjusting the longitudinal gap and the transverse gap, and dielectric blocks of different sizes can excite more resonant modes, further improving the radiation gain.

[0107] In addition to dielectric integrated antennas composed of dielectric blocks of different sizes, there are also dielectric integrated antennas composed of dielectric blocks of the same size. However, the radiation performance of the antenna device is poor compared with that of the dielectric blocks of the same size. In order to improve another embodiment of the present disclosure, the following will be described. Figure 10~Figure 19 The structure and performance of a dielectric integrated antenna device according to another embodiment of the present disclosure are described.

[0108] Fig.10 A three-dimensional schematic diagram of a dielectric integrated antenna device according to another embodiment of the present disclosure is schematically shown.

[0109] like Fig.10 As shown, the device 1000 includes a bottom metal layer 1010, a first dielectric layer 1020, an intermediate metal layer 1030, a second dielectric layer 1040, a concave cavity 1050, a dielectric integrated antenna 1060, and a frame-shaped metal strip 1070, wherein the dielectric integrated antenna 1060 includes a plurality of dielectric blocks 1061. The first dielectric layer 1020 includes a metal structure 1021.

[0110] According to an embodiment of the present disclosure, the impedance bandwidth with an input reflection coefficient of -15 dB can reach 20.7 GHz.

[0111] According to the embodiment of the present disclosure, the structure of the device 1000 and the device 300 is basically the same except for the dielectric block, which will not be described herein.

[0112] It should be noted that Fig.10 The number of dielectric blocks in the figure is only for illustration. In actual application, the number of dielectric blocks can be increased or decreased according to application requirements.

[0113] Fig.11 The overall schematic diagram of a dielectric integrated antenna device according to another embodiment of the present disclosure is schematically shown.

[0114] like Fig.11 As shown, embodiment 1100 corresponds to embodiment 1000 .

[0115] Fig.12 A partial schematic diagram of a dielectric integrated antenna device according to another embodiment of the present disclosure is schematically shown.

[0116] like Fig.12As shown, the embodiment 1200 includes a bottom metal layer 1010 , a first dielectric layer 1020 , an intermediate metal layer 1030 , a second dielectric layer 1040 , a frame-shaped metal strip 1070 , a metal wall 1210 inside the concave cavity, a dielectric block 1061 and a metal structure 1021 .

[0117] The height of the dielectric block hDRA may be 123 μm.

[0118] Fig.13 A front view of a dielectric-integrated antenna device according to another embodiment of the present disclosure is schematically shown.

[0119] like Fig.13 As shown, the embodiment 1300 includes a silicon plate 1040 , a frame-shaped metal strip 1070 , a metal wall 1210 inside the concave cavity, and a dielectric block 1061 .

[0120] Fig.14 A top view of a dielectric-integrated antenna device according to another embodiment of the present disclosure is schematically shown.

[0121] like Fig.14 As shown, the embodiment 1400 includes a feeding slot 1410 , a dielectric block 1061 , a frame-shaped metal strip 1070 and a metal structure 1021 .

[0122] The feeding slot width Wslot may be 11 μm, the feeding slot length Lslot may be 521 μm, the first strip width w1 may be 45 μm, and the first strip width w2 may be 40 μm.

[0123] Fig.15 A schematic diagram of an electromagnetic wave conducting structure according to another embodiment of the present disclosure is schematically shown.

[0124] like Fig.15 As shown, the electromagnetic wave conducting structure 1510 is located in the dielectric layer above the bottom metal layer 1010 .

[0125] The width Ws of the metal signal line may be 55 μm, and the spacing width Wg between the metal signal line and the bottom metal layer may be 20 μm.

[0126] Fig.16 A schematic diagram of a plurality of dielectric blocks of the same size according to another embodiment of the present disclosure is schematically shown.

[0127] like Fig.16 As shown, the dielectric blocks have the same size and are all rectangular.

[0128] The width wDRA of the dielectric block may be 123 μm, the length lDRA of the dielectric block may be 163 μm, the lateral gap wgap between adjacent dielectric blocks may be 171 μm, and the longitudinal distance lgap between adjacent dielectric blocks may be 13 μm.

[0129] Fig.17 The gain-frequency curve of a dielectric integrated antenna device according to another embodiment of the present disclosure is schematically shown.

[0130] like Fig.17 As shown, the horizontal axis represents the frequency, and the vertical axis on the left represents the input reflection coefficient S 11 , the vertical axis on the right represents the gain.

[0131] According to an embodiment of the present disclosure, the input reflection coefficient S of the dielectric integrated antenna device is 11 In the gain-frequency variation curve, the gain variation is less than 2.3dB, and the peak gain can reach 9.11dBi.

[0132] Fig.18 The radiation efficiency-frequency curve of the dielectric integrated antenna device according to the embodiment of the present disclosure is schematically shown.

[0133] like Fig.18 As shown, the ordinate represents radiation efficiency and the abscissa represents frequency.

[0134] According to the embodiments of the present disclosure, the radiation efficiency at any frequency is greater than 0.8, and the maximum radiation efficiency is approximately 0.858.

[0135] Fig.19 The radiation pattern of the dielectric integrated antenna device according to the embodiment of the present disclosure is schematically shown.

[0136] like Fig.19 As shown, the ordinate is gain. It can be clearly seen that the radiation patterns in the horizontal and vertical directions have good symmetry, can achieve a maximum gain of 9dBi, and the front-to-back ratio is greater than 20dB.

[0137] Fig. 20 The invention schematically shows a method for preparing a dielectric integrated antenna device according to an embodiment of the present disclosure.

[0138] like Fig. 20 As shown, the method 2000 includes operations S2010 to S2050.

[0139] In operation S2010, a photoresist is coated on a first surface of the second dielectric layer to obtain an etching mask.

[0140] In operation S2020, a layer of metal is sputtered on the etching mask, and the metal is electroplated to obtain an intermediate metal layer.

[0141] In operation S2030, a dielectric material is coated on the surface of the intermediate metal layer to obtain a first dielectric layer.

[0142] In operation S2040, a layer of metal is electroplated on the first dielectric layer to obtain a bottom metal layer.

[0143] In operation S2050, a second surface of the second dielectric layer is subjected to a pattern metallization process and a dielectric etching process to obtain a target dielectric integrated antenna.

[0144] According to an embodiment of the present disclosure, a high-resistivity silicon wafer may be selected as the second dielectric layer.

[0145] According to an embodiment of the present disclosure, a layer of metal is sputtered on an etching mask, and the metal is electroplated to obtain an intermediate metal layer, including: cleaning the etching mask and then sputtering the metal, circuiting and polishing the sputtered metal to obtain a metal wall inside the concave cavity, and then performing secondary electroplating on the metal to obtain the intermediate metal layer. The electroplated metal may be copper.

[0146] According to the embodiments of the present disclosure, the preparation of the bottom metal layer to the middle metal layer is integrated, which can achieve higher processing accuracy and better meet the requirements of modern communications for antennas. Moreover, only etching processing is required on a partial area of ​​the silicon substrate to obtain the target medium integrated antenna, which has a high degree of integration while ensuring performance.

[0147] According to an embodiment of the present disclosure, the second surface of the second dielectric layer is subjected to a graphic metallization process and a dielectric etching process to obtain a target dielectric integrated antenna, including: thinning the second surface of the second dielectric layer to obtain a thinned second dielectric layer; performing a graphic metallization process on the thinned second dielectric layer to obtain a metal strip; performing a dielectric etching process on the thinned second dielectric layer to obtain a concave cavity and a dielectric block.

[0148] According to the embodiments of the present disclosure, the dielectric etching process can etch a high aspect ratio structure on the substrate of the second dielectric layer, and obtain the shape of the concave cavity and the dielectric block according to predetermined process parameters.

[0149] Fig.21 A schematic diagram of preparing a first direction of a dielectric integrated antenna device according to an embodiment of the present disclosure is schematically shown.

[0150] like Fig.21 As shown, the first direction is direction A in the legend.

[0151] Fig. 22 A schematic diagram of preparing a second direction of a dielectric integrated antenna device according to an embodiment of the present disclosure is schematically shown.

[0152] like Fig. 22As shown, the second direction is the B direction in the legend.

[0153] The flowcharts and block diagrams in the accompanying drawings illustrate the possible implementation architecture, functions and operations of the systems, methods and computer program products according to various embodiments of the present disclosure. In this regard, each box in the flowchart or block diagram may represent a module, a program segment, or a part of a code, and the above-mentioned module, program segment, or a part of the code contains one or more executable instructions for implementing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box may also occur in an order different from that marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram or flowchart, and the combination of boxes in the block diagram or flowchart, can be implemented with a dedicated hardware-based system that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions. It can be understood by those skilled in the art that the features recorded in the various embodiments of the present disclosure can be combined and / or combined in a variety of ways, even if such a combination or combination is not explicitly recorded in the present disclosure. In particular, without departing from the spirit and teaching of the present disclosure, the features described in the various embodiments of the present disclosure may be combined and / or combined in a variety of ways. All of these combinations and / or combinations fall within the scope of the present disclosure.

[0154] The embodiments of the present disclosure are described above. However, these embodiments are only for illustrative purposes and are not intended to limit the scope of the present disclosure. Although the embodiments are described above separately, this does not mean that the measures in the various embodiments cannot be used in combination to advantage. Without departing from the scope of the present disclosure, those skilled in the art may make a variety of substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. A dielectric integrated antenna device, characterized in that: include: bottom metal layer; A first dielectric layer, stacked on the bottom metal layer, wherein the first dielectric layer includes a metal structure; An intermediate metal layer, stacked on the first dielectric layer, the intermediate metal layer comprising a feeding gap; A second dielectric layer is stacked on the middle metal layer, wherein a concave cavity is provided in the second dielectric layer, and the concave cavity is arranged above the feeding slot, wherein the concave cavity includes a plurality of dielectric blocks, and there are gaps between adjacent dielectric blocks, and the gaps between the plurality of dielectric blocks and the adjacent dielectric blocks constitute a dielectric integrated antenna; The feeding slot is used to couple the electromagnetic signal fed from the metal structure, and the dielectric integrated antenna is used to radiate electromagnetic energy corresponding to the electromagnetic signal into free space.

2. The device according to claim 1, characterized in that A frame-shaped metal strip is provided at the edge of the concave cavity, wherein the edge of the concave cavity represents the connection between the upper surface of the second dielectric layer and the concave cavity.

3. The device according to claim 1, characterized in that A metal wall is provided on the inner side of the concave cavity.

4. The device according to claim 1, characterized in that The metal structure includes an electromagnetic wave conducting structure corresponding to a predetermined rule.

5. The device according to claim 4, characterized in that The electromagnetic wave conducting structure and the feeding slot constitute a feeding unit, and the feeding unit is used to excite the resonant mode of the dielectric integrated antenna.

6. The device according to claim 1, characterized in that The sizes of the dielectric blocks are different, and the shapes of the dielectric blocks include one of the following: a cuboid, a cylinder, and a hemisphere.

7. The device according to claim 1, characterized in that The shape of the feeding slot includes one of the following: rectangular, I-shaped.

8. The antenna according to claim 1, characterized in that: The gap includes a longitudinal gap and a transverse gap.

9. A method for preparing a dielectric integrated antenna device, characterized in that: include: Coating a photoresist on the first surface of the second dielectric layer to obtain an etching mask; sputtering a layer of metal on the etching mask, and electroplating the metal to obtain an intermediate metal layer; Coating a dielectric material on the surface of the intermediate metal layer to obtain a first dielectric layer; Electroplating a layer of metal on the first dielectric layer to obtain a bottom metal layer; The second surface of the second dielectric layer is subjected to pattern metallization processing and dielectric etching processing to obtain a target dielectric integrated antenna.

10. The method according to claim 9, characterized in that The step of performing a pattern metallization process and a dielectric etching process on the second surface of the second dielectric layer substrate to obtain a target dielectric integrated antenna includes: Performing a thinning process on the second surface of the second dielectric layer to obtain a thinned second dielectric layer; Performing a pattern metallization process on the thinned second dielectric layer to obtain a metal strip; The thinned second dielectric layer is subjected to dielectric etching to obtain a concave cavity and a dielectric block.

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