Substrate lower surface drying device and substrate cleaning device provided with same

Abstract

The substrate cleaning apparatus includes a first substrate holding portion and a drying device. The drying device includes a first gas injection portion and a second gas injection portion. The first gas injection unit advances in a drying advancing direction parallel to the substrate while injecting gas from below toward the substrate held by the first substrate holding unit. When the first gas injection unit injects the gas onto the substrate, the second gas injection unit injects the gas from above the substrate toward a portion of the outer edge of the substrate in plan view. A gas collision region of the lower surface of the substrate, which receives the gas from the first gas injection part, is formed in a belt shape continuously extending in a direction orthogonal to the drying advancing direction. The middle portion of the gas collision region is located at the rear end of the first gas injection portion in the advancing direction.

Description

Technical Field

[0001] The present invention relates to a substrate lower surface drying device for drying the lower surface of a substrate and a substrate cleaning device equipped with the substrate lower surface drying device. Background Art

[0002] Substrate processing devices are used to perform various processes on various substrates such as FPD (Flat Panel Display) substrates used in liquid crystal display devices or organic EL (Electro Luminescence) display devices, semiconductor substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, ceramic substrates, or solar cell substrates. Substrate cleaning devices are used to clean substrates.

[0003] The substrate cleaning device described in Patent Document 1 includes an upper holding device, a lower holding device, a lower surface cleaning device, and a gas ejection portion. The lower holding device is a so-called rotary chuck that holds the lower surface central area of ​​the substrate by adsorption and rotates the substrate in a horizontal posture. The lower surface cleaning device cleans the area (hereinafter referred to as the lower surface outer area) surrounding the lower surface central area of ​​the lower surface of the substrate held by the lower holding device. At this time, a cleaning liquid is supplied to the lower surface outer area of ​​the substrate. After the lower surface outer area is cleaned, the supply of cleaning liquid to the substrate is stopped. On the other hand, the substrate is continuously rotated. As a result, the cleaning liquid attached to the lower surface outer area of ​​the substrate is thrown off, and the lower surface outer area of ​​the substrate is dried.

[0004] The upper holding device includes a pair of lower chucks and a pair of upper chucks. The substrate arranged between the pair of lower chucks and between the pair of upper chucks is clamped by the pair of lower chucks and the pair of upper chucks. Thus, the substrate to be cleaned is held in a state where the pair of lower chucks and the pair of upper chucks are in contact with the outer peripheral end of the substrate. The lower surface cleaning device also cleans the central area of ​​the lower surface of the substrate held by the upper holding device. At this time, the cleaning liquid is supplied to the central area of ​​the lower surface of the substrate. After the central area of ​​the lower surface is cleaned, the supply of the cleaning liquid to the substrate is stopped, and gas is sprayed from the gas ejection part to the lower surface of the substrate. A curtain-like gas flow is formed between the gas ejection part and the lower surface of the substrate. In this state, the gas ejection part moves toward the outer peripheral end of the substrate. The cleaning liquid attached to the substrate moves on the lower surface of the substrate toward the outside of the substrate along with the movement of the gas ejection part and is removed. Thus, the central area of ​​the lower surface of the substrate is dried.

[0005] Patent Document 1: Japanese Patent Application Publication No. 2022-51029 Summary of the invention

[0006] As described above, in the substrate cleaning device described in Patent Document 1, after cleaning the outer region of the lower surface of the substrate, the substrate is rotated to perform spin drying (spin drying), thereby removing droplets of cleaning liquid attached to the outer region of the lower surface of the substrate.

[0007] On the other hand, after cleaning the central area of ​​the lower surface of the substrate, a gas is sprayed toward the substrate held in a horizontal position and without rotation. Thus, the droplets of the cleaning liquid attached to the central area of ​​the lower surface of the substrate are removed. In this way, when the droplets attached to the substrate are removed only by the spraying of gas, for example, the droplets removed from the lower surface of the substrate may scatter and float around the outer peripheral end of the substrate. If the droplets that scatter and float around the outer peripheral end of the substrate adhere to the substrate again, the cleanliness of the substrate decreases. In addition, when the droplets attached to the substrate are removed only by the spraying of gas, for example, the droplets attached to the substrate may move in an unexpected direction on the lower surface of the substrate, and thus, may remain on the lower surface of the substrate. If the droplets adhere to the substrate after the drying process, the cleanliness of the substrate decreases.

[0008] An object of the present invention is to provide a substrate lower surface drying device capable of improving the cleanliness of a substrate after a drying process and a substrate cleaning device having the substrate lower surface drying device.

[0009] According to one aspect of the present invention, a substrate lower surface drying device comprises: a first substrate holding portion for holding a substrate; a first gas injection portion for injecting gas from below toward the substrate held by the first substrate holding portion; and a second gas injection portion for injecting gas from above the substrate held by the first substrate holding portion toward at least a portion of the outer edge of the substrate held by the first substrate holding portion when viewed from above, when the first gas injection portion is used to inject gas toward the substrate.

[0010] A substrate cleaning device according to another aspect of the present invention comprises: the above-mentioned substrate lower surface drying device; a first cleaning unit; a second substrate holding unit, which rotates the substrate while adsorbing and holding at least a portion of the central region of the lower surface of the substrate; a second cleaning unit, which cleans the outer region of the lower surface of the substrate held and rotated by the second substrate holding unit; and a control unit, wherein the first substrate holding unit of the substrate lower surface drying device is configured to be able to hold the substrate by abutting against the outer edge of the substrate, the first cleaning unit cleans the central region of the lower surface of the substrate held by the first substrate holding unit, and the control unit controls the substrate lower surface drying device, the first cleaning unit, the second substrate holding unit, and the second cleaning unit to sequentially perform a first cleaning process of cleaning the outer region of the lower surface of the substrate by the second cleaning unit, a first drying process of removing droplets attached to the outer region of the lower surface of the substrate due to the first cleaning process, a second cleaning process of cleaning the central region of the lower surface of the substrate by the first cleaning unit, and a second drying process of removing droplets attached to the central region of the lower surface of the substrate by the substrate lower surface drying device.

[0011] The lower surface drying device of a substrate according to another aspect of the present invention comprises: a first substrate holding portion for holding a substrate; a first gas injection portion for injecting gas from below toward the substrate held by the first substrate holding portion; and a relative moving portion, wherein when the first gas injection portion is used to inject gas, the relative moving portion moves in a manner that causes the first gas injection portion to be pushed relative to the substrate held by the first substrate holding portion toward a first direction parallel to the substrate, wherein a gas collision region on the lower surface of the substrate that receives the gas injected from the first gas injection portion comprises a first end and a second end separated from each other in a second direction parallel to the substrate and orthogonal to the first direction, and a continuous strip portion extending continuously between the first end and the second end, wherein a portion of the continuous strip portion is located rearward of the first end and the second end in the first direction, and is located rearward of another portion of the continuous strip portion in the first direction.

[0012] A substrate cleaning device according to another aspect of the present invention comprises: the above-mentioned substrate lower surface drying device; a first cleaning unit; a second substrate holding unit, which rotates the substrate while adsorbing and holding at least a portion of the lower surface central area of ​​the substrate; a second cleaning unit, which cleans the lower surface outer area of ​​the substrate held and rotated by the second substrate holding unit; and a control unit, wherein the first substrate holding unit of the substrate lower surface drying device is configured to be able to hold the substrate by abutting against the outer edge of the substrate, the first cleaning unit cleans the lower surface central area of ​​the substrate held by the first substrate holding unit, and the control unit controls the substrate lower surface drying device, the first cleaning unit, the second substrate holding unit and the second cleaning unit to sequentially perform a first cleaning process of cleaning the lower surface outer area of ​​the substrate using the second cleaning unit, a first drying process of removing droplets attached to the lower surface outer area of ​​the substrate due to the first cleaning process, a second cleaning process of cleaning the lower surface central area of ​​the substrate using the first cleaning unit, and a second drying process of removing droplets attached to the lower surface central area of ​​the substrate due to the second cleaning process using the substrate lower surface drying device.

[0013] Effects of the Invention

[0014] According to the present invention, the cleanliness of the substrate after the drying process can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic top view of the substrate cleaning device according to the first embodiment.

[0016] Figure 2 It is shown Figure 1 A three-dimensional diagram of the internal structure of a substrate cleaning device.

[0017] Figure 3 It is shown based on Figure 1 Flow chart of substrate cleaning and drying processing of a control unit.

[0018] Figure 4 The diagram shows the operating state of the substrate cleaning device when performing a part of the substrate cleaning and drying process.

[0019] Figure 5 The diagram shows the operating state of the substrate cleaning device when performing a part of the substrate cleaning and drying process.

[0020] Figure 6 This is a schematic plan view showing a state of the drying device when the lower surface of the substrate held by the upper holding device starts to be dried.

[0021] Figure 7It is a diagram showing the operating state of the drying device when the lower surface of the substrate held by the upper holding device is dried.

[0022] Figure 8 It is a diagram showing the operating state of the drying device when the lower surface of the substrate held by the upper holding device is dried.

[0023] Fig. 9 It is a diagram showing the operating state of the drying device when the lower surface of the substrate held by the upper holding device is dried.

[0024] Fig.10 This is a schematic plan view for explaining a modified example of the first gas injection unit according to the first embodiment.

[0025] Fig.11 It is a schematic top view of the substrate cleaning device according to the second embodiment.

[0026] Fig.12 Schematic top view of a substrate cleaning device according to a third embodiment

[0027] Fig.13 It is a schematic top view of a substrate cleaning device according to another embodiment. DETAILED DESCRIPTION

[0028] Hereinafter, the substrate lower surface drying device and the substrate cleaning device having the substrate lower surface drying device according to the embodiment of the present invention are described using the accompanying drawings. In the following description, the substrate refers to a semiconductor substrate (wafer), a liquid crystal display device or an organic EL (Electro Luminescence) display device, etc. FPD (Flat Panel Display) substrate, an optical disk substrate, a magnetic disk substrate, an optical disk substrate, a photomask substrate, a ceramic substrate, or a solar cell substrate. In addition, in the following description, the upper surface of the substrate is the circuit forming surface (surface), and the lower surface of the substrate is the surface on the opposite side of the circuit forming surface (back surface). In addition, the substrate has a circular shape except for the notch.

[0029] Moreover, in the following description, horizontal means substantially horizontal, and strictly speaking, also includes being parallel to a prescribed horizontal plane, and being inclined within a certain angle range (e.g., an angle range of 10°) relative to a prescribed horizontal plane. In addition, vertical means substantially vertical, and strictly speaking, also includes being parallel to a prescribed vertical plane, and being inclined within a certain angle range (e.g., an angle range of 10°) relative to a prescribed vertical plane.

[0030] 1. First Implementation

[0031] <1> Composition of substrate cleaning device

[0032] Figure 1 It is a schematic top view of the substrate cleaning device according to the first embodiment. Figure 2 It is shown Figure 1 A three-dimensional view of the internal structure of the substrate cleaning device 1. In the substrate cleaning device 1 of the present embodiment, in order to clarify the positional relationship, mutually orthogonal X direction, Y direction and Z direction are defined. Figure 1 as well as Figure 2 In the following predetermined drawings, the X direction, the Y direction, and the Z direction are indicated by arrows as appropriate. The X direction and the Y direction are perpendicular to each other in the horizontal plane, and the Z direction corresponds to the vertical direction.

[0033] like Figure 1 as well as Figure 2 As shown, the substrate cleaning device 1 has the following structure, that is, in a unit frame 2 having a substantially rectangular shape, an upper holding device 10A, 10B, a lower holding device 20, a base device 30, a transfer device 40, a lower surface cleaning device 50, a cup cover device 60, an upper surface cleaning device 70, an end cleaning device 80, an opening and closing device 90 and a drying device 100 are accommodated. Figure 2 In FIG. 1 , the unit frame 2 is indicated by a dotted line.

[0034] The unit frame 2 has a rectangular parallelepiped shape, including a rectangular bottom portion and four side walls extending upward from the four sides of the bottom portion. Two of the four side walls are opposite to each other in the Y direction. The other two of the four side walls are opposite to each other in the X direction. A loading and unloading port 2x for substrates W is formed in the center of one of the four side walls. An opening and closing device 90 is provided near the loading and unloading port 2x. The opening and closing device 90 includes a gate 91, which is configured to be able to open and close the loading and unloading port 2x through the gate 91.

[0035] A base device 30 is provided on the bottom of the unit frame 2. The base device 30 includes a linear guide 31 and a movable base 32. The linear guide 31 includes two rails arranged in the X direction and extends in the Y direction so as to cross the central portion of the bottom in the X direction. The base device 30 is configured to be able to move the movable base 32 to a plurality of positions in the Y direction on the two rails of the linear guide 31.

[0036] On the movable base 32, the lower holding device 20 and the lower surface cleaning device 50 are arranged in the Y direction. The lower holding device 20 is fixed to the upper surface of the movable base 32, and includes an adsorption holding portion 21. The adsorption holding portion 21 is a so-called rotary chuck, and has a circular adsorption surface that can adsorb and hold the lower surface of the substrate W. In addition, the adsorption holding portion 21 is configured to be rotatable around an axis extending in the vertical direction (axis in the Z direction). The lower holding device 20 adsorbs and holds the lower surface of the substrate W by the adsorption holding portion 21, and rotates the adsorbed and held substrate W around the axis extending in the vertical direction. In the following description, when the substrate W is adsorbed and held by the adsorption holding portion 21, the area on the lower surface of the substrate W to be adsorbed by the adsorption surface of the adsorption holding portion 21 is referred to as the lower surface central area. On the other hand, the area surrounding the lower surface central area of ​​the lower surface of the substrate W is referred to as the lower surface outer area.

[0037] On the movable base 32, a delivery device 40 is provided near the lower holding device 20. The delivery device 40 has a plurality of (three in this example) support pins 41 provided in a manner of surrounding the suction holding portion 21 in a plan view and extending in the vertical direction. The plurality of support pins 41 are provided so as to be able to be raised and lowered between a plurality of predetermined height positions.

[0038] As described later, the upper holding devices 10A and 10B are configured to hold the substrate W at a position above the lower holding device 20. The delivery device 40 can receive the substrate W held by the lower holding device 20 and deliver it to the upper holding device 10A and 10B by raising and lowering the plurality of support pins 41. In addition, the delivery device 40 can receive the substrate W held by the upper holding devices 10A and 10B and deliver it to the lower holding device 20.

[0039] The lower surface cleaning device 50 includes a lower surface brush 51, two liquid spray nozzles 52, a lifting support portion 54, and a movable support portion 55. The movable support portion 55 is configured to be movable in the Y direction relative to the lower holding device 20 within a certain area on the movable base 32. Figure 2 As shown, the lifting support portion 54 can be lifted and lowered on the moving support portion 55 .

[0040] like Figure 1As shown, the lower surface brush 51 has a circular cleaning surface that can contact the lower surface of the substrate W. In addition, the lower surface brush 51 is mounted on the lifting support part 54 in a manner that the cleaning surface faces upward and in a manner that the cleaning surface can rotate around an axis that passes through the center of the cleaning surface and extends in the vertical direction. The area of ​​the cleaning surface of the lower surface brush 51 is larger than the area of ​​the adsorption surface of the adsorption holding part 21. Two liquid spray nozzles 52 are mounted on the lifting support part 54 in a manner that they are respectively located near the lower surface brush 51 and the liquid spray ports face the cleaning surface of the lower surface brush 51. A cleaning liquid supply system (not shown) is connected to the liquid spray nozzle 52.

[0041] The lower surface cleaning device 50, for example, raises and lowers the lifting support portion 54 in a state where the substrate W is held by the lower holding device 20 or the upper holding devices 10A and 10B described later, so that the lower surface brush 51 is in contact with the lower surface of the substrate W. In this state, the lower surface cleaning device 50 sprays cleaning liquid from the two liquid spray nozzles 52 to the lower surface brush 51, and rotates the lower surface brush 51 around an axis extending in the vertical direction. In this way, the lower surface of the substrate W can be cleaned.

[0042] It should be noted that, when the lower surface brush 51 is formed of a sponge-like member, the cleaning liquid can be sprayed from the liquid spray nozzle 52 onto the lower surface brush 51 before it contacts the substrate W, so that the lower surface brush 51 is immersed in the cleaning liquid in advance. In this case, the lower surface of the substrate W can be cleaned without spraying the cleaning liquid from the liquid spray nozzle 52 onto the lower surface brush 51 while the lower surface of the substrate W contacts the lower surface brush 51.

[0043] The cup cover device 60 is provided at a substantially central portion of the unit frame 2 and includes a cup cover 61. The cup cover 61 is provided so as to surround a portion of the lower holding device 20 and the base device 30 in a plan view and to be able to be raised and lowered. Figure 2 In the figure, the cup cover 61 is indicated by a dotted line. The cup cover 61 moves between a lower cup cover position and an upper cup cover position that are predetermined in advance, depending on which part of the lower surface of the substrate W is cleaned by the lower surface brush 51. The lower cup cover position is a height position at which the upper end of the cup cover 61 is located below the substrate W adsorbed and held by the adsorption holding part 21. In addition, the upper cup cover position is a height position at which the upper end of the cup cover 61 is located above the adsorption holding part 21.

[0044] The upper holding devices 10A and 10B are provided at a height position higher than the cup cover 61. The upper holding devices 10A and 10B face each other across the base device 30 in a plan view. The upper holding device 10A includes a lower chuck 11A and an upper chuck 12A. The upper holding device 10B includes a lower chuck 11B and an upper chuck 12B.

[0045] The lower chucks 11A and 11B are symmetrically arranged with respect to a vertical plane passing through the center of the adsorption holding portion 21 and extending in the Y direction when viewed from above, and are configured to be movable in the X direction within a common horizontal plane. Each of the lower chucks 11A and 11B has two support pieces that can support the outer area of ​​the lower surface of the substrate W from below the substrate W. The upper chucks 12A and 12B are symmetrically arranged with respect to a vertical plane passing through the center of the adsorption holding portion 21 and extending in the Y direction when viewed from above, similarly to the lower chucks 11A and 11B, and are configured to be movable in the X direction within a common horizontal plane. Each of the upper chucks 12A and 12B has two holding pieces that are configured to be in contact with two parts of the outer peripheral end of the substrate W and can hold the outer peripheral end of the substrate W.

[0046] The upper holding devices 10A and 10B adjust the distance between the lower chuck 11A and the upper chuck 12A, and the lower chuck 11B and the upper chuck 12B. Thus, the upper holding devices 10A and 10B clamp the substrate W between the lower chuck 11A and the upper chuck 12A and the lower chuck 11B and the upper chuck 12B, thereby being able to hold the substrate W at a position above the lower holding device 20. In addition, the upper holding devices 10A and 10B can release the held substrate W by moving the lower chuck 11A and the upper chuck 12A away from the lower chuck 11B and the upper chuck 12B.

[0047] like Figure 1 As shown, an upper surface cleaning device 70 is provided on one side of the cup cover 61. Figure 2 As shown, the upper surface cleaning device 70 includes a rotating support shaft 71, an arm 72 and a spray nozzle 73. The rotating support shaft 71 is arranged to be able to rise and fall and to rotate in a manner extending in the vertical direction. The arm 72 is arranged to extend in the horizontal direction from the upper end of the rotating support shaft 71 at a position above the upper holding device 10A, 10B. A spray nozzle 73 is installed at the front end of the arm 72. A fluid supply system not shown is connected to the spray nozzle 73. Cleaning liquid and gas are supplied to the spray nozzle 73 from the fluid supply system not shown. As a result, the cleaning liquid and gas are mixed in the spray nozzle 73 to generate a mixed fluid. The generated mixed fluid is sprayed downward from the spray nozzle 73.

[0048] For example, when the substrate W is held by the lower holding device 20 and rotated, the upper surface cleaning device 70 adjusts the height position of the rotation support shaft 71 so that the spray nozzle 73 moves above the substrate W, thereby rotating the rotation support shaft 71. In this state, the upper surface cleaning device 70 sprays the mixed fluid from the spray nozzle 73 toward the substrate W. Thus, the entire upper surface of the substrate W can be cleaned.

[0049] like Figure 1As shown, an end cleaning device 80 is provided on the other side of the cup cover 61. Figure 2 As shown, the end cleaning device 80 includes a rotating support shaft 81, an arm 82, and an inclined brush 83. The rotating support shaft 81 is provided in a manner extending in the vertical direction so as to be able to be raised and lowered and to be able to rotate. The arm 82 is provided so as to extend in the horizontal direction from the upper end of the rotating support shaft 81 at a position above the upper holding devices 10A and 10B. The inclined brush 83 is provided at the front end of the arm 82 in a manner protruding downward and being able to rotate around an axis in the vertical direction.

[0050] The end cleaning device 80, for example, rotates the rotation support shaft 81 so that the inclined brush 83 contacts the outer peripheral end of the substrate W while the substrate W is held and rotated by the lower holding device 20, and adjusts the height position of the rotation support shaft 81. The end cleaning device 80 also rotates the inclined brush 83 provided at the front end of the arm 82 around the axis in the vertical direction. In this way, the outer peripheral end of the substrate W can be cleaned as a whole.

[0051] like Figure 1 As shown, the drying device 100 includes a first gas injection unit 110 and a second gas injection unit 120. The first gas injection unit 110 is a gas injection nozzle having a gas injection port 111. The gas injection port 111 is a slit that extends continuously along a broken line including two straight lines and a bending point in a top view. The first gas injection unit 110 is installed on the lifting support unit 54 of the lower surface cleaning device 50 in a top view so that the gas injection port 111 is directed upward and is located between the lower surface brush 51 of the lower surface cleaning device 50 and the lower holding device 20.

[0052] The first gas injection unit 110 is connected to a jet gas supply system (not shown). In the present embodiment, an inert gas such as nitrogen is used as the gas supplied from the jet gas supply system to the first gas injection unit 110. The first gas injection unit 110 sprays gas supplied from the jet gas supply system (not shown) upward when, for example, drying the lower surface of the substrate W. Thus, a gas flow is formed that divides the space on the lower surface brush 51 of the lower surface cleaning device 50 and the space on the adsorption holding unit 21 of the lower side holding device 20 in a plan view.

[0053] The second gas injection unit 120 is a gas injection nozzle having a gas injection port 121. The gas injection port 121 is formed to extend continuously along an arc corresponding to a portion of the outer peripheral end of the substrate W in a plan view. The second gas injection unit 120 is mounted on the unit frame 2 via a bracket (not shown) at a position above the upper holding devices 10A and 10B. In this state, the gas injection port 121 of the second gas injection unit 120 faces downward and is opposite to a portion of the outer peripheral end of the substrate W held by the upper holding devices 10A and 10B. In addition, the second gas injection unit 120 is positioned so that the gas injection port 121 covers the gas injection port 111 of the first gas injection unit 110 in the X direction in a plan view, that is, the gas injection port 121 overlaps with the gas injection port 111 in the X direction.

[0054] The second gas injection unit 120 is provided with a jet gas supply system (not shown). In the present embodiment, an inert gas such as nitrogen is used as the gas supplied from the jet gas supply system to the second gas injection unit 120. When, for example, the lower surface of the substrate W is dried, the second gas injection unit 120 injects the gas supplied from the jet gas supply system (not shown) toward a part of the outer peripheral end of the substrate W. In this case, a gas flow is formed that divides the space where the substrate W is located and the space outside the substrate W in a plan view.

[0055] In the substrate cleaning device 1 of this embodiment, in order to dry the lower surface of the substrate W held by the upper holding devices 10A and 10B, the first gas injection unit 110 and the second gas injection unit 120 inject gas toward the substrate W. As a result, the cleaning degree of the substrate W after the drying process is improved. This will be described in detail later.

[0056] like Figure 1 As shown, the substrate cleaning device 1 further includes a control unit 9. The control unit 9 includes, for example, a CPU (central processing unit) and a memory or a microcomputer. A substrate cleaning and drying program is stored in the memory. The CPU of the control unit 9 controls the operation of the above-mentioned components (10A, 10B, 20, 30, 40, 50, 60, 70, 80, 90, 100) by executing the substrate cleaning and drying program stored in the memory.

[0057] <2> Substrate cleaning and drying

[0058] The following describes the process of cleaning the substrate 1. Figure 1 The control unit 9 performs the substrate cleaning and drying process. Figure 3 It is shown based on Figure 1 Flow chart of the substrate cleaning and drying process of the control unit 9. Figure 4 as well as Figure 51 is a diagram showing the operating state of the substrate cleaning device 1 when performing a part of the substrate cleaning and drying process. Figure 4 as well as Figure 5 In each figure, the top part shows a top view of the substrate cleaning device 1, the middle part shows a side view of the lower holding device 20 and its surrounding parts observed along the Y direction, and the lower part shows a side view of the lower holding device 20 and its surrounding parts observed along the X direction. Figure 1 The AA line side view corresponds to the lower side view. Figure 1 It should be noted that, in order to facilitate understanding of the shape and operation status of each component in the substrate cleaning device 1, the scaling ratio of some components is different between the top view in the upper part and the side views in the middle and lower parts. Figure 4 as well as Figure 5 In FIG. 6 , the cup cover 61 is indicated by a double-dotted line. Figure 4 as well as Figure 5 In the top view of the upper part of the substrate W, the outer shape of the substrate W is indicated by a thick dashed line. Figure 4 as well as Figure 5 In, omitted Figure 1 FIG. 1 is a diagram of a second gas injection unit 120 .

[0059] Figure 3 The substrate cleaning and drying process is performed by the CPU of the control unit 9 executing the substrate cleaning and drying program stored in the storage device. In the initial state, the base device 30 is set to be a movable base 32 is positioned so that the adsorption holding part 21 of the lower holding device 20 is located in the center of the cup cover 61 in a plan view.

[0060] First, the control unit 9 controls the opening and closing device 90 to open the loading and unloading port 2x, and delivers the substrate W loaded from the outside of the substrate cleaning apparatus 1 into the unit frame 2 (step S1).

[0061] Next, the control unit 9 controls the delivery device 40 to receive the substrate W using the plurality of support pins 41 and deliver it to the lower holding device 20 (step S2). It should be noted that, if the substrate W brought in from the outside of the substrate cleaning device 1 can be placed on the adsorption holding unit 21, the processing of step S2 can be omitted. After the substrate W is received by the delivery device 40, the loading and unloading port 2x opened in step S1 is closed by the gate 91.

[0062] Next, the control unit 9 controls the lower holding device 20 to use the adsorption holding unit 21 to adsorb and hold the lower surface center area of ​​the substrate W (step S3). Furthermore, the control unit 9 controls the lower holding device 20, the base device 30, the lower surface cleaning device 50, the upper surface cleaning device 70, the end cleaning device 80, and the drying device 100 to clean the entire upper surface, the outer peripheral end, and the lower surface outer area of ​​the substrate W (step S4).

[0063] When performing the above step S4, Figure 4 As shown in FIG. 1 , the substrate W held by the adsorption holding unit 21 rotates around the vertical axis. In this state, by operating the upper surface cleaning device 70, as in Figure 4 As shown by the thick solid arrow a1 in FIG. 1 , the spray nozzle 73 moves to a position above the rotating substrate W. By spraying the mixed fluid onto the entire upper surface of the substrate W, the entire upper surface of the substrate W is cleaned. When the cleaning of the entire upper surface of the substrate W is completed, the spray nozzle 73 moves to a predetermined standby position (a position on one side of the cup cover 61 when viewed from above).

[0064] In addition, by operating the end cleaning device 80, as in Figure 4 As shown by the thick solid arrow a2 in FIG. 1 , the inclined brush 83 moves to a position above the outer peripheral end of the substrate W and descends. As a result, the inclined brush 83 contacts the outer peripheral end of the substrate W. In this state, the inclined brush 83 rotates (rotates) around the axis in the vertical direction, thereby cleaning the outer peripheral end of the substrate W. When the cleaning of the outer peripheral end of the substrate W is completed, the inclined brush 83 moves to a predetermined standby position (a position on the other side of the cup cover 61 when viewed from above).

[0065] Furthermore, by operating the lower surface cleaning device 50, the cleaning surface (upper surface) of the lower surface brush 51 abuts against the outer area of ​​the lower surface of the substrate W, and the lower surface brush 51 rotates around the axis in the vertical direction. In addition, the cleaning liquid is sprayed from the liquid spray nozzle 52 to the lower surface brush 51. Figure 4 As shown by the thick solid arrow a3 in FIG. 1 , the movable support part 55 moves forward and backward in the Y direction on the movable base 32. As a result, the outer area of ​​the lower surface of the substrate W is cleaned by the lower surface brush 51. When the cleaning of the outer area of ​​the lower surface of the substrate W is completed, the lower surface brush 51 stops rotating and descends to a standby position separated from the substrate W. In addition, the cleaning liquid is stopped from being sprayed from the liquid spray nozzle 52 to the lower surface brush 51.

[0066] It should be noted that when cleaning the outer region of the lower surface of the substrate W, the gas is sprayed from the first gas spray unit 110 toward the lower surface of the substrate W. This prevents droplets of the cleaning liquid scattered from the lower surface brush 51 from adhering to the lower surface center region of the substrate W and the lower holding device 20 .

[0067] After cleaning the entire upper surface, the outer peripheral end, and the outer area of ​​the lower surface of the substrate W, the control unit 9 controls the lower holding device 20 to rotate the substrate W at high speed to dry the entire substrate W (step S5). The drying method of rotating the substrate W at high speed to dry the entire substrate W is called spin drying.

[0068] Next, the control unit 9 receives the substrate W from the lower holding device 20 by controlling the delivery device 40 using the plurality of support pins 41, and delivers the received substrate W to the upper holding devices 10A and 10B (step S6). At this time, the control unit 9 controls the upper holding devices 10A and 10B to hold the outer peripheral end of the substrate W at a position above the lower holding device 20 (step S7). Thereafter, the control unit 9 cleans the lower surface center area of ​​the substrate W by controlling the lower holding device 20, the base device 30, and the drying device 100 (step S8).

[0069] When performing the above step S8, Figure 5 As shown, the substrate W is held in a horizontal position by the upper holding devices 10A and 10B without rotating. In this state, the base device 30 is operated so that the cleaning surface of the lower surface brush 51 is positioned opposite to the central area of ​​the lower surface of the substrate W. In addition, by operating the lower surface cleaning device 50, the cleaning surface (upper surface) of the lower surface brush 51 abuts against the central area of ​​the lower surface of the substrate W, and the lower surface brush 51 rotates around the axis in the vertical direction. In addition, the cleaning liquid is sprayed from the liquid spray nozzle 52 to the lower surface brush 51. Thus, the central area of ​​the lower surface of the substrate W is cleaned by the lower surface brush 51. If the cleaning of the central area of ​​the lower surface of the substrate W is completed, the lower surface brush 51 stops rotating and descends to a standby position separated from the substrate W.

[0070] When cleaning the central area of ​​the lower surface of the substrate W, the gas is sprayed toward the lower surface of the substrate W from the first gas spray unit 110. This prevents the droplets of the cleaning liquid scattered from the lower surface brush 51 from scattering toward the area on the opposite side of the lower surface brush 51 in the Y direction with reference to the first gas spray unit 110 in a plan view. It should be noted that the rotation speed of the lower surface brush 51 is low, and therefore, when the droplets do not scatter from the lower surface brush 51, it is not necessary to spray the gas from the first gas spray unit 110 toward the lower surface of the substrate W during the cleaning of the central area of ​​the lower surface of the substrate W.

[0071] After the cleaning of the central area of ​​the lower surface of the substrate W is completed, the control unit 9 controls the base device 30 and the drying device 100 to dry the lower surface of the substrate W without rotating the substrate W (step S9). In the following description, the drying of the lower surface of the substrate W in step S9 is referred to as lower surface drying. The details of the drying of the lower surface of the substrate W by the drying device 100 and the drying mechanism by the drying device 100 will be described later.

[0072] Finally, the control unit 9 opens the loading / unloading port 2x by controlling the opening / closing device 90. As a result, the substrate W is transported to the outside of the substrate cleaning device 1 (step S10), and the cleaning and drying process is completed. The loading / unloading port 2x opened in step S10 is closed by the gate 91 after the substrate W is unloaded.

[0073] It should be noted that the control unit 9 controls the cup cover device 60 during the processing of steps S4 and S5 in the above series of processes, thereby maintaining the cup cover 61 in the upper cup cover position. Therefore, when the entire upper surface, the outer peripheral end, and the outer area of ​​the lower surface of the substrate W are cleaned, and when the substrate W is spin-dried, the droplets scattered from the substrate W are caught by the cup cover 61 and discharged to the outside of the substrate cleaning device 1. In addition, the control unit 9 controls the cup cover device 60 during the processing (steps S1 to S3, S6 to S10) other than steps S4 and S5 in the above series of processes, thereby maintaining the cup cover 61 in the lower cup cover position.

[0074] <3> Drying of the lower surface of the substrate W by the drying device 100

[0075] Figure 6 1 is a schematic top view showing the state of the drying device 100 when the lower surface of the substrate W held by the upper holding devices 10A and 10B starts to be dried. Figure 6 In FIG. 1 , the outer shape of the substrate W is indicated by a thick dashed line. In addition, the upper holding devices 10A and 10B are schematically indicated by a thick solid frame. Furthermore, the boundary between the lower surface center region R1 and the lower surface outer region R2 of the lower surface of the substrate W is indicated by a double dashed line.

[0076] As described above, the drying device 100 includes the first gas injection unit 110 and the second gas injection unit 120. The first gas injection unit 110 is mainly used to move and drop the liquid droplets attached to the lower surface central region R1 toward the outer peripheral end of the substrate W. Therefore, when the lower surface of the substrate W starts to be dried, the first gas injection unit 110 is arranged between the lower surface central region R1 and the outer peripheral end of the substrate W in a plan view.

[0077] In this example, the first gas injection unit 110 is located between the outer peripheral end of the substrate W and the lower surface center area R1 in the Y direction when the lower surface of the substrate W is dried. Figure 1 The base device 30 is operated to eject gas and horizontally move in the direction FD toward the center area R1 of the lower surface (hereinafter referred to as the drying advancement direction). Figure 6 In the figure, the drying advancement direction FD is indicated by a blank arrow.

[0078] The second gas injection unit 120 is mainly used to force the droplets on the lower surface of the substrate W moved to the outer peripheral end of the substrate W by the first gas injection unit 110 to fall downward from the outer peripheral end of the substrate W. Therefore, the second gas injection unit 120 is located on the travel path of the first gas injection unit 110 in a plan view. The second gas injection unit 120 injects gas from the gas injection port 121 toward a part of the outer peripheral end of the substrate W. Thus, a flow of gas from a part of the outer peripheral end of the substrate W toward the bottom is formed by the gas passing through the space adjacent to the part of the outer peripheral end of the substrate W in a plan view.

[0079] Here, the region of the lower surface of the substrate W that receives the gas ejected from the first gas ejection unit 110 is referred to as a gas collision region AR. Figure 6 In FIG. 1 , the gas collision region AR is indicated by a hatched dot-dash frame.

[0080] like Figure 6 As shown, the gas collision region AR of this example extends continuously in a zigzag shape and has a first end p11 and a second end p12. The first end p11 and the second end p12 are separated from each other in the X direction orthogonal to the drying advancement direction FD.

[0081] In addition, the gas collision region AR has a first strip-shaped portion b1 and a second strip-shaped portion b2 between the first end p11 and the second end p12. The first strip-shaped portion b1 extends linearly from the first end p11 toward the second end p12 toward the oblique rear based on the drying advancement direction FD. The second strip-shaped portion b2 extends linearly from the second end p12 toward the first end p11 toward the oblique rear based on the drying advancement direction FD. The rear end of the first strip-shaped portion b1 based on the drying advancement direction FD and the rear end of the second strip-shaped portion b2 based on the drying advancement direction FD are connected to each other. The connection portion between the first strip-shaped portion b1 and the second strip-shaped portion b2 is set as a curved portion p13. In the gas collision region AR of this example, the curved portion p13 is located at the rear of the drying advancement direction FD and at the center of the substrate W in the X direction. The angle between the first strip-shaped portion b1 and the second strip-shaped portion b2 is set, for example, in the range of 45° or more and less than 180°.

[0082] The first gas injection unit 110 is configured such that the length d1 of the gas collision region AR in the X direction is greater than or equal to the maximum length d2 of the lower surface central region R1 in the X direction. In addition, the first gas injection unit 110 and the second gas injection unit 120 are configured such that the length d1 of the gas collision region AR in the X direction is smaller than the length d3 of the portion of the substrate W receiving the gas from the gas injection port 121 in the X direction.

[0083] Figure 7 to Figure 9 1 is a diagram showing the operating state of the drying device 100 when the lower surface of the substrate W held by the upper holding devices 10A and 10B is dried. Figure 7 to Figure 9 In each of the figures, a schematic top view showing the operating state of the drying device 100 is shown at the top, and a schematic end view along the QQ line of the top is shown at the bottom. Figure 6 The schematic top view of FIG. 1 shows various components and the gas collision area AR, etc. in the same manner. In the schematic end view, in order to easily understand that the gas ejected from the first gas ejection unit 110 has a width and expansibility in the Y direction, two thick arrows aa1 are used to indicate the flow of the gas ejected from the first gas ejection unit 110. In addition, in order to easily understand that the gas ejected from the second gas ejection unit 120 has a width in the Y direction, two thick arrows aa2 are used to indicate the flow of the gas ejected from the second gas ejection unit 120.

[0084] like Figure 7 As shown, at the start time of drying the lower surface of the substrate W, Figure 3 The plurality of droplets dr of the cleaning liquid used in the cleaning of step S8 are attached to the central region R1 of the lower surface. On the other hand, there are no droplets dr of the cleaning liquid in the outer region R2 of the lower surface. Figure 7 As shown by the thick arrow aa1 in the upper end view of the substrate W, the gas is ejected from the first gas ejection unit 110 toward the lower surface of the substrate W. At this time, on the lower surface of the substrate W, as shown in FIG. Figure 7 As shown in an enlarged manner in the upper white box BA1 , part of the gas that has collided with the gas collision region AR flows to the side of the gas collision region AR (see a plurality of arrows bb1 ).

[0085] In addition, as in Figure 7 As shown by the thick arrow aa2 in the end view of the lower part of the substrate W, the gas is injected from the second gas injection unit 120 toward a portion of the outer peripheral end of the substrate W. At this time, near the outer peripheral end of the substrate W, such as Figure 7 As shown in the enlarged white box BA2 at the upper part of the substrate W, most of the gas passing through the space adjacent to the outer peripheral end of the substrate W flows downward from the outer peripheral end of the substrate W (see multiple arrows bb2). In addition, part of the gas that collides with the outer peripheral end of the substrate W or the vicinity thereof flows obliquely downward from the outer peripheral end of the substrate W (see multiple arrows bb3). Moreover, the first gas injection unit 110 moves in the drying advancement direction FD.

[0086] like Figure 8 As shown in FIG. 1 , if the first gas jet unit 110 moves to a certain extent in the drying advancement direction FD, the liquid droplets dr attached to the lower surface of the substrate W move toward the outer peripheral end of the substrate W along the drying advancement direction FD as the gas collision area AR moves. Specifically, Figure 8 As indicated by a plurality of arrows bb1 in the upper part of , the flow of gas in the direction orthogonal to the first strip-shaped portion b1 in a plan view is applied to the droplets dr located on the travel path of the first strip-shaped portion b1. In other words, the flow of gas from the first strip-shaped portion b1 is applied to the droplets dr located on the travel path of the first strip-shaped portion b1 so that the droplets dr located on the travel path of the first strip-shaped portion b1 flow in a plan view toward the front of the drying advancement direction FD and toward the center of the substrate W in the X direction. As a result, the droplets dr located on the travel path of the first strip-shaped portion b1 move to the drying advancement direction FD along with the gas collision region AR, and are guided to the curved portion p13 of the gas collision region AR along the first strip-shaped portion b1.

[0087] In addition, as in Figure 8As indicated by a plurality of arrows bb1 at the upper part of , the flow of gas in a direction orthogonal to the second strip-shaped portion b2 in a plan view acts on the droplets dr located on the travel path of the second strip-shaped portion b2. In other words, the flow of gas from the second strip-shaped portion b2 acts on the droplets dr located on the travel path of the first strip-shaped portion b1 so that the droplets dr located on the travel path of the first strip-shaped portion b1 flow in a plan view toward the front of the drying advancement direction FD and toward the center of the substrate W in the X direction. As a result, the droplets dr located on the travel path of the second strip-shaped portion b2 move to the drying advancement direction FD along with the gas collision region AR, and are guided to the curved portion p13 of the gas collision region AR along the second strip-shaped portion b2.

[0088] By this mechanism, the liquid droplets dr located on the path of the gas collision region AR on the lower surface of the substrate W are prevented from moving in the X direction to deviate from the gas collision region AR. Therefore, the liquid droplets dr attached to the central region R1 of the lower surface of the substrate W are prevented from moving on the lower surface of the substrate W in a direction deviating from the path of the gas collision region AR and remaining on the lower surface of the substrate W.

[0089] Afterwards, if Fig. 9 As shown, when the first gas jetting unit 110 reaches the outer peripheral end of the substrate W, the droplets dr moving on the lower surface of the substrate W together with the gas collision area AR are forced to fall due to the flow of gas from a part of the outer peripheral end of the substrate W toward the bottom (see Figure 7 As a result, the droplets removed from the lower surface of the substrate W are reduced from scattering and floating near the outer peripheral end of the substrate W. Therefore, the droplets dr removed from the lower surface of the substrate W are reduced from moving upward to the upper surface of the substrate W and attaching again to the upper surface of the substrate W. As a result, the cleanliness of the substrate W after the lower surface drying process is improved. It should be noted that, with respect to the flow of gas in the horizontal direction toward the outside of the substrate W, the injection direction and injection flow rate of the gas of the second gas injection unit 120 are adjusted in such a manner that the flow is not generated or can be ignored even if the flow is generated.

[0090] It should be noted that in the above-mentioned embodiment, along with the operation of the susceptor device 30, the first gas injection unit 110 moves in the drying advancement direction FD relative to the substrate W. Thus, the lower surface is dried. However, the present invention is not limited to this configuration. The upper side holding devices 10A and 10B can be configured to move in the direction opposite to the drying advancement direction FD while holding the substrate W. By moving the upper side holding devices 10A and 10B in the direction opposite to the drying advancement direction FD, the first gas injection unit 110 moves relative to the substrate W in the drying advancement direction FD. Thus, the lower surface is dried. During the drying of the lower surface, the first gas injection unit 110 may also move in the drying advancement direction FD.

[0091] In these cases, the second gas injection unit 120 is configured to be movable together with the upper holding devices 10A and 10B in the direction opposite to the drying advancement direction FD. Thus, the second gas injection unit 120 always injects gas toward a portion of the outer peripheral end of the substrate W during the lower surface drying, and operates in conjunction with the upper holding devices 10A and 10B.

[0092] <4> Modification of the first gas injection unit 110

[0093] The first gas injection unit 110 of the present embodiment may have the following configuration. Fig.10 FIG. 1 is a schematic top view for explaining a modified example of the first gas injection unit 110 of the first embodiment. Fig.10 In, using Figure 6 The schematic top view shows various components and the gas collision area AR, etc. in the same way.

[0094] like Fig.10 As shown in FIG. 1 , the first gas injection unit 110 of this modification is configured such that the gas collision region AR extends continuously in a curved shape. More specifically, the gas collision region AR corresponding to the first gas injection unit 110 of this modification has a first end p21 and a second end p22. The first end p21 and the second end p22 are separated from each other in the X direction orthogonal to the drying advancement direction FD, and are located at the same position in the drying advancement direction FD.

[0095] In addition, the gas collision region AR has a strip-shaped portion b3 between the first end p21 and the second end p22. The strip-shaped portion b3 extends in a curved shape in a manner that expands rearward with the drying advancement direction FD as a reference. In the gas collision region AR, the approximate center of the strip-shaped portion b3 is located at the rearmost of the drying advancement direction FD.

[0096] When the lower surface of the substrate W is dried using the first gas jet unit 110 of this modified example, the droplets dr attached to the lower surface of the substrate W also move along the drying advancement direction FD toward the outer peripheral end of the substrate W along with the movement of the gas collision area AR. At this time, the droplets dr are guided to the approximate center of the gas collision area AR along the leading edge of the band-shaped portion b3 based on the drying advancement direction FD. This prevents the droplets dr of the cleaning liquid on the lower surface of the substrate W from moving in the X direction to deviate from the gas collision area AR. Therefore, compared with using Figure 1 Similarly to the case of the first gas injection unit 110 , the droplets dr attached to the lower surface of the substrate W are prevented from moving in a direction deviating from the travel path of the gas collision area AR on the lower surface of the substrate W and remaining on the lower surface of the substrate W.

[0097] <5> Effects of the First Embodiment

[0098] In the substrate cleaning device 1 of the present embodiment, when drying the lower surface central region R1 of the substrate W, the first gas injection unit 110 injects gas toward the lower surface of the substrate W and moves along the drying advancement direction FD in a manner passing through the lower surface central region R1. As a result, the droplets dr attached to the lower surface central region R1 move to the outer peripheral end of the substrate W.

[0099] The first gas injection unit 110 is configured so that the gas collision region AR extending continuously on the lower surface of the substrate W is in a zigzag or curved shape. The central portion of the gas collision region AR is located behind the two ends of the gas collision region AR in the drying advancement direction FD. Therefore, the gas collision region AR has a straight portion or a curved portion inclined relative to the drying advancement direction FD in a plan view from the one end to the rear end. In addition, the gas collision region AR has a straight portion or a curved portion inclined relative to the drying advancement direction FD in a plan view from the other end to the rear end. As a result, the droplets dr attached to the lower surface of the substrate W are guided to the central portion of the gas collision region AR when they are pushed in the drying advancement direction FD of the first gas injection unit 110. As a result, the droplets dr of the cleaning liquid on the lower surface of the substrate W are prevented from moving in the X direction to deviate from the gas collision region AR. Therefore, the droplets dr attached to the central region R1 of the lower surface of the substrate W are prevented from moving in a direction deviating from the travel path of the gas collision region AR on the lower surface of the substrate W, thereby remaining on the lower surface of the substrate W.

[0100] In addition, the second gas injection unit 120 injects gas from above toward a portion of the outer peripheral end of the substrate W. A flow of gas is formed from a portion of the outer peripheral end of the substrate W toward the bottom. As a result, the droplets dr moved toward the outer peripheral end of the substrate W by the first gas injection unit 110 are forced to fall from a portion of the outer peripheral end of the substrate W. Therefore, the droplets dr removed from the lower surface of the substrate W are reduced from moving upward to the substrate W and attaching to the upper surface of the substrate W again. As a result, the cleanliness of the substrate W after the lower surface drying process is improved.

[0101] In the substrate cleaning device 1, the substrate W is rotated while the lower surface center region R1 of the substrate W is held by the lower holding device 20. The entire upper surface, the outer peripheral end, and the lower surface outer region R2 of the substrate W are cleaned. The substrate W is then spun and dried.

[0102] Thereafter, while the substrate W is held by the upper holding devices 10A and 10B, the lower surface central region R1 of the substrate W is cleaned and dried. Thus, when adsorption marks are formed on the lower surface central region R1 of the substrate W by the adsorption holding portion 21 of the lower holding device 20 during spin drying, the adsorption marks are also removed by cleaning the lower surface central region R1. In addition, the drying device 100 is used when drying the lower surface central region R1. Thus, the overall cleanliness of the substrate after the above series of treatments is improved.

[0103] 2. Second Implementation

[0104] Regarding the substrate cleaning apparatus of the second embodiment, differences from the substrate cleaning apparatus 1 of the first embodiment will be described. Fig.11 FIG. 2 is a schematic top view of a substrate cleaning device according to a second embodiment. Fig.11 As shown, in the substrate cleaning device 1 of the present embodiment, the first gas injection unit 110 has a gas injection port 111 extending linearly in the X direction. Therefore, when drying for removing droplets attached to the central area R1 of the lower surface of the substrate W, the gas collision area AR is formed into a straight line extending in the X direction. In this case, when drying the central area R1 of the lower surface of the substrate W, the droplets dr that move through the gas collision area AR and reach the outer peripheral end of the substrate W are also forced to fall to the bottom of the substrate W by the flow of gas formed by the second gas injection unit 120. As a result, the droplets removed from the lower surface of the substrate W are reduced from scattering and floating near the outer peripheral end of the substrate W. Therefore, the cleanliness of the substrate W after the lower surface drying process is improved.

[0105] 3. Third Implementation

[0106] Regarding the substrate cleaning apparatus of the third embodiment, differences from the substrate cleaning apparatus 1 of the first embodiment will be described. Fig.12 FIG. 2 is a schematic top view of a substrate cleaning device according to a third embodiment. Fig.12 As shown, in the present embodiment, the substrate cleaning device 1 is not provided with Figure 1 In this case, when the central region R1 of the lower surface of the substrate W is dried, the gas ejected from the first gas ejection unit 110 toward the lower surface of the substrate W is used to prevent the droplets dr of the cleaning liquid on the lower surface of the substrate W from moving in the X direction to deviate from the gas collision region AR. As a result, the droplets dr attached to the lower surface of the substrate W are prevented from moving in a direction deviating from the travel path of the gas collision region AR on the lower surface of the substrate W and remaining on the lower surface of the substrate W. Therefore, the cleaning degree of the substrate W after the lower surface drying process is improved.

[0107] 4. Other Implementation Methods

[0108] (a) In the substrate cleaning device 1 of the above embodiment, Figure 1 The gas injection port 111 is a slit extending continuously in a zigzag or curved shape, but the present invention is not limited thereto. When the gas injection port 111 dries the central region R1 of the lower surface of the substrate W, the gas collision region AR can be formed to extend continuously on the lower surface of the substrate W by injecting gas from the first gas injection unit 110 toward the lower surface of the substrate W. Therefore, the gas injection port 111 may have a configuration in which a plurality of slits are arranged at intervals in a discontinuously extending manner, or may have a configuration in which a plurality of holes are arranged at predetermined intervals.

[0109] (b) In the substrate cleaning device 1 of the above embodiment, the first gas injection unit 110 injects gas in the vertical direction (upward) toward the lower surface of the substrate W, but the present invention is not limited thereto. The first gas injection unit 110 may also be configured to inject gas from the gas injection port 111 toward the lower surface of the substrate W in a direction inclined relative to the vertical direction. More specifically, the first gas injection unit 110 may also be configured to inject gas obliquely upward, for example, toward the drying advancement direction FD (advance direction forward).

[0110] In this case, the gas collision area AR is located ahead of the gas injection port 111 in the drying advancement direction FD when viewed from above. Therefore, even when the first gas injection unit 110 does not reach the outer peripheral end of the substrate W when viewed from above, the droplets dr on the lower surface of the substrate W can be moved to the outer peripheral end of the substrate W. As a result, the moving range of the first gas injection unit 110 can be reduced. It should be noted that when the travel path of the first gas injection unit 110 is set so as not to reach the outer peripheral end of the substrate W when viewed from above, the second gas injection unit 120 is configured to overlap with the extension line of the travel path of the first gas injection unit 110 when viewed from above.

[0111] In addition to the above examples, the first gas injection unit 110 may be configured to inject gas diagonally upward in the drying advancement direction FD (advance direction front) and in a direction inclined relative to the drying advancement direction FD in a plan view. Furthermore, the first gas injection unit 110 may be configured to inject gas in different directions in multiple portions.

[0112] (c) In the substrate cleaning device 1 of the above embodiment, the second gas injection unit 120 is fixed to the unit frame 2 via a bracket not shown in the figure, but the present invention is not limited to this. The second gas injection unit 120 can also be configured to be movable between a position above the outer peripheral end of the substrate W held by the upper holding device 10A, 10B and a standby position set on the side of the cup cover 61 in a top view, for example.

[0113] (d) In the substrate cleaning apparatus 1 of the first embodiment and the second embodiment, the first gas injection unit 110 and the susceptor device 30 function as a configuration for moving the liquid droplets dr attached to the lower surface of the substrate W to the outer peripheral end of the substrate W. The configuration for moving the liquid droplets dr attached to the lower surface of the substrate W to the outer peripheral end of the substrate W is not limited to the above example.

[0114] For example, it is assumed that the lower holding device 20 has a configuration in place of the above-mentioned adsorption holding unit 21, and has a rotation axis, and can hold the outer peripheral end of the substrate W on the rotation axis and rotate the substrate W. In this case, the configuration for moving the droplets dr attached to the lower surface of the substrate W to the outer peripheral end of the substrate W may be a configuration for spraying gas from below the substrate W through the axis of the rotation axis toward the center of the lower surface of the substrate W.

[0115] In the case of adopting this configuration, the second gas injection unit 120 is further configured to inject gas from above onto the entire outer peripheral end portion of the substrate W. Thus, the liquid droplets dr guided onto the entire outer peripheral end portion of the substrate W on the lower surface of the substrate W can be forced to fall from the outer peripheral end portion of the substrate W by the gas injected by the second gas injection unit 120.

[0116] (e) In the substrate cleaning apparatus 1 of the above embodiment, the drying apparatus 100 is used to remove the droplets dr attached to the lower surface center region R1 of the substrate W and dry the lower surface of the substrate W, but the present invention is not limited thereto.

[0117] The drying device 100 can also be used to remove the droplets dr attached to the central region R1 of the lower surface of the substrate W, and remove the droplets dr attached to the outer region R2 of the lower surface of the substrate W. For example, it is assumed that the plurality of support pins 41 constituting the delivery device 40 can rotate around an axis (hereinafter referred to as a pin rotation axis) in the vertical direction passing through the center of the substrate W held by the upper holding devices 10A and 10B.

[0118] In this case, after the substrate W held by the upper holding devices 10A and 10B is subjected to the above-mentioned lower surface drying process based on the drying device 100, the delivery device 40 receives the substrate W. In addition, a plurality of support pins 41 are rotated around the pin rotation axis in the delivery device 40, thereby rotating the substrate W at a predetermined angle in the horizontal plane. Thereafter, the substrate W rotated at the predetermined angle is held again by the upper holding devices 10A and 10B. In addition, the position of the first gas injection unit 110 relative to the substrate W is returned to the position of the initial state of the lower surface drying process. In this state, the lower surface drying process based on the drying device 100 is performed. As long as these series of actions can be repeated, it is not limited to the lower surface central area R1 of the substrate W, and the lower surface outer area R2 can also be dried.

[0119] (f) In the substrate cleaning device 1 of the above-mentioned embodiment, during the substrate cleaning and drying process, the entire upper surface, the outer peripheral end, and the outer region R2 of the lower surface of the substrate W are cleaned while the substrate W is held by the lower holding device 20, and the substrate W is spin-dried. Thereafter, while the substrate W is held by the upper holding devices 10A and 10B, the central region R1 of the lower surface of the substrate W is cleaned and dried. However, the present invention is not limited to the example of the above-mentioned embodiment. In the substrate cleaning device 1, initially, the central region R1 of the lower surface of the substrate W may be cleaned and dried while the substrate W is held by the upper holding devices 10A and 10B. Thereafter, while the substrate W is held by the lower holding device 20, the entire upper surface, the outer peripheral end, and the outer region R2 of the lower surface of the substrate W may be cleaned and spin-dried.

[0120] (g) The substrate cleaning apparatus 1 of the above-described embodiment may be provided with a structure for accelerating the drying of the lower surface of the substrate W when the lower surface of the substrate W is dried. Fig.13 FIG. 1 is a schematic top view of a substrate cleaning device according to another embodiment. Fig.13As shown, the substrate cleaning device 1 of this example has Figure 1 In addition to the configuration of the substrate cleaning apparatus 1 of the first embodiment, the substrate cleaning apparatus 1 further includes one or more (two in this example) high temperature gas supply units 200. The high temperature gas supply unit 200 supplies high temperature gas having a higher temperature than the gas sprayed from the first gas spray unit 110 to the substrate W held by the upper holding device 10A, 10B when the lower surface of the substrate W is dried by the drying device 100.

[0121] In this case, when drying the lower surface of the substrate W, the substrate W is heated by the high temperature gas, and the drying efficiency of the substrate W is improved. It should be noted that the high temperature gas supply unit 200 can supply the high temperature gas to the upper surface of the substrate W, and can also supply the high temperature gas to the lower surface of the substrate W. It should be noted that as the high temperature gas, it is preferable to supply the same gas as the gas sprayed from the first gas spray unit 110 to the substrate W (in the above example, an inactive gas).

[0122] (h) In the substrate cleaning apparatus 1 of the above-described embodiment, the substrate W to be processed has a circular shape except for the notch, but the substrate W may have a rectangular shape.

[0123] (i) In the substrate cleaning device 1 of the above embodiment, both the lower surface central region R1 and the lower surface outer region R2 of the substrate W are cleaned by the lower surface cleaning device 50, but the present invention is not limited thereto. The structure for cleaning the lower surface central region R1 of the substrate W and the structure for cleaning the lower surface outer region R2 of the substrate W may also be provided independently.

[0124] 5. Correspondence between the components of the claimed scope and the parts of the embodiments

[0125] Hereinafter, examples of correspondence between each component of the claimed scope and each component of the embodiment will be described, but the present invention is not limited to the following examples. As each component of the claimed scope, various other components having the structure or function described in the claimed scope can also be used.

[0126] In the above-mentioned embodiment, the upper side holding devices 10A, 10B are examples of a first substrate holding portion, the first gas injection portion 110 is an example of a first gas injection portion, the second gas injection portion 120 is an example of a second gas injection portion, and the component group including the upper side holding devices 10A, 10B, the base device 30 and the drying device 100 is an example of a substrate lower surface drying device.

[0127] In addition, the drying advancement direction FD is an example of a first direction, the base device 30 is an example of a relatively moving portion, the gas collision area AR is an example of a gas collision area, the X direction is an example of a second direction, the first end portions p11 and p21 are examples of first ends, the second end portions p12 and p22 are examples of second ends, the first strip portion b1, the second strip portion b2, and the strip portion b3 are examples of continuous strip portions, and the lower surface central area R1 is an example of a drying object area.

[0128] In addition, the bent portion p13 is an example of a portion of the continuous strip portion and a bent portion, the high-temperature gas supply portion 200 is an example of a high-temperature gas supply portion, the lower surface cleaning device 50 is an example of a first cleaning portion and a second cleaning portion, the lower side holding device 20 is an example of a second substrate holding portion, and the control portion 9 is an example of a control portion.

[0129] in addition, Figure 3 The cleaning process of step S4 in the substrate cleaning and drying process is an example of a first cleaning process. Figure 3 The spin drying process in step S5 of the substrate cleaning and drying process is an example of the first drying process. Figure 3 The cleaning process of step S8 in the substrate cleaning and drying process is an example of the second cleaning process. Figure 3 The lower surface drying process in step S9 of the substrate cleaning and drying process is an example of the second drying process.

[0130] 6. Summary of Implementation Methods

[0131] (Item 1) The substrate lower surface drying device of Item 1 comprises:

[0132] a first substrate holding portion for holding a substrate;

[0133] a first gas injection portion that injects gas from below toward the substrate held by the first substrate holding portion; and

[0134] The second gas injection unit injects gas from above the substrate held by the first substrate holding unit toward at least a portion of the outer edge of the substrate held by the first substrate holding unit in a plan view when the first gas injection unit is used to inject gas toward the substrate.

[0135] In the substrate lower surface drying device, gas is sprayed from below toward the substrate held by the first substrate holding portion, so that droplets attached to the lower surface of the substrate are moved toward an area outside the substrate by the gas sprayed from the first gas spray portion.

[0136] At this time, the gas is sprayed from above toward at least a portion of the outer edge of the substrate in a top view, and a gas flow is formed from at least a portion of the outer edge of the substrate toward the bottom. In this case, the droplets moved toward at least a portion of the outer edge of the substrate by the gas sprayed from the first gas spraying part on the lower surface of the substrate are forced to fall by the gas sprayed toward at least a portion of the outer edge of the substrate. Therefore, the droplets removed from the lower surface of the substrate are reduced from scattering and floating near the outer edge of the substrate.

[0137] As a result, the droplets removed from the lower surface of the substrate are less likely to move upwards to the substrate and reattach to the upper surface of the substrate, thereby improving the cleanliness of the substrate after the drying process.

[0138] (Item 2) In the substrate lower surface drying device described in Item 1,

[0139] The substrate lower surface drying device further comprises a relative moving portion, which moves in a manner such that the first gas jetting portion moves toward a first direction relative to the substrate held by the first substrate holding portion when the first gas jetting portion jets gas.

[0140] The at least a portion of the outer edge of the substrate held by the first substrate holding portion may be on a travel path of the first gas ejecting portion or on an extension of the travel path in a plan view.

[0141] In this case, the liquid droplets attached to the lower surface of the substrate are moved in the first direction as the first gas injection unit moves by the gas injected from the first gas injection unit. As a result, the liquid droplets moving on the lower surface of the substrate reach at least a portion of the outer edge of the substrate and are forced to fall by the gas injected from the second gas injection unit. As a result, the cleanliness of the substrate after the drying process is further improved.

[0142] (Item 3) In the substrate lower surface drying device described in Item 2,

[0143] A gas collision region on the lower surface of the substrate that receives the gas ejected from the first gas ejection unit may include:

[0144] a first end portion and a second end portion separated from each other in a second direction orthogonal to the first direction; and

[0145] A continuous strip portion extends continuously between the first end portion and the second end portion.

[0146] In this case, the gas collision region is formed to extend continuously in the second direction on the lower surface of the substrate, thereby preventing the liquid droplets from remaining in the region where the gas collision region moves on the lower surface of the substrate.

[0147] (Item 4) In the substrate lower surface drying device described in Item 3,

[0148] The length between the first end and the second end of the gas collision region in the second direction may be greater than or equal to the maximum length of a predetermined drying target region on the lower surface of the substrate in the second direction.

[0149] In this case, by moving the gas collision region so as to pass through the entire drying target region, it is prevented that liquid droplets remain on the drying target region on the lower surface of the substrate.

[0150] (Item 5) In the substrate lower surface drying device according to any one of Items 1 to 4,

[0151] The substrate lower surface drying device may further include a high temperature gas supply unit that supplies high temperature gas having a higher temperature than gas injected from the first gas injection unit to the substrate held by the first substrate holding unit.

[0152] In this case, when the first gas ejection unit and the second gas ejection unit remove the droplets attached to the substrate, the high temperature gas can be supplied to the substrate, thereby heating the substrate with the high temperature gas and improving the drying efficiency of the substrate.

[0153] (Item 6) In the substrate lower surface drying device described in any one of Item 3 or Item 4,

[0154] A portion of the continuous strip of the gas collision region may be located rearwardly in the first direction compared to the first end and the second end, and rearwardly in the first direction compared to another portion of the continuous strip.

[0155] In this case, when the gas collision region moves toward the first direction on the lower surface of the substrate, the droplets attached to the lower surface of the substrate move in a manner of gathering to a part of the continuous strip-shaped portion in the second direction and move in the first direction. Thus, the droplets are prevented from moving in the second direction on the lower surface of the substrate to deviate from the gas collision region. Therefore, the droplets attached to the lower surface of the substrate are prevented from moving in a direction deviating from the path of the gas collision region on the lower surface of the substrate and remaining on the lower surface of the substrate. As a result, the cleanliness of the substrate after the drying process is further improved.

[0156] (Item 7) The substrate cleaning device of Item 7 comprises:

[0157] The substrate lower surface drying device according to any one of items 1 to 6;

[0158] First cleaning department;

[0159] a second substrate holding portion that rotates the substrate while sucking and holding at least a portion of a central region of a lower surface of the substrate;

[0160] a second cleaning section that cleans an area outside a lower surface of the substrate held and rotated by the second substrate holding section; and

[0161] Control Department,

[0162] The first substrate holding portion of the substrate lower surface drying device is configured to hold the substrate by abutting against an outer edge of the substrate.

[0163] The first cleaning unit cleans a central area of ​​a lower surface of the substrate held by the first substrate holding unit.

[0164] The control unit controls the substrate lower surface drying device, the first cleaning unit, the second substrate holding unit and the second cleaning unit to sequentially perform a first cleaning process for cleaning the outer area of ​​the lower surface of the substrate using the second cleaning unit, a first drying process for removing droplets attached to the outer area of ​​the lower surface of the substrate due to the first cleaning process, a second cleaning process for cleaning the central area of ​​the lower surface of the substrate using the first cleaning unit, and a second drying process for removing droplets attached to the central area of ​​the lower surface of the substrate due to the second cleaning process using the substrate lower surface drying device.

[0165] In the substrate cleaning device, a first cleaning process and a first drying process are performed while at least a portion of the central area of ​​the lower surface of the substrate is held by the second substrate holding portion. Thereafter, a second cleaning process and a second drying process are performed while the substrate is held by the first substrate holding portion. Thus, after the first drying process, in the case where adsorption marks due to the second substrate holding portion are formed in the central area of ​​the lower surface of the substrate, the adsorption marks are also removed by the second cleaning process. In addition, during the second drying process, the central area of ​​the lower surface of the substrate is dried by the substrate lower surface drying device. As a result, the overall cleanliness of the lower surface of the substrate after the above series of processes is improved.

[0166] (Item 8) The substrate lower surface drying device of Item 8 comprises:

[0167] a first substrate holding portion for holding a substrate;

[0168] a first gas injection portion that injects gas from below toward the substrate held by the first substrate holding portion; and

[0169] a relative moving part that moves in a manner that relatively pushes the first gas ejection part toward a first direction parallel to the substrate relative to the substrate held by the first substrate holding part when the first gas ejection part ejects gas;

[0170] A gas collision region on the lower surface of the substrate receiving the gas ejected from the first gas ejection portion includes a first end and a second end that are separated from each other in a second direction parallel to the substrate and orthogonal to the first direction, and a continuous strip portion that continuously extends between the first end and the second end.

[0171] A portion of the continuous strip-shaped portion is located rearwardly compared to the first end portion and the second end portion in the first direction, and is located rearwardly compared to another portion of the continuous strip-shaped portion in the first direction.

[0172] In the substrate lower surface drying device, gas is sprayed from a first gas spray unit toward a substrate held by a first substrate holding unit, and the first gas spray unit is moved toward a first direction relative to the substrate. A gas collision region is formed to extend continuously in a second direction on the lower surface of the substrate. Thus, droplets existing in an area on the lower surface of the substrate where the gas collision region moves are moved toward the first direction by the gas sprayed from the first gas spray unit accompanying the movement of the first gas spray unit.

[0173] Here, a portion of the continuous strip portion of the gas collision region is located rearward compared to the first end and the second end of the gas collision region in the first direction. In addition, a portion of the continuous strip portion of the gas collision region is located rearward in the first direction compared to another portion of the continuous strip portion. In this case, when the gas collision region moves toward the first direction on the lower surface of the substrate, the droplets attached to the lower surface of the substrate move in a manner that gathers on a portion of the continuous strip portion in the second direction and moves in the first direction. Thus, the droplets on the lower surface of the substrate are prevented from moving in the second direction to deviate from the gas collision region. Therefore, the droplets attached to the lower surface of the substrate are prevented from moving on the lower surface of the substrate in a direction that deviates from the path of travel of the gas collision region and remaining on the lower surface of the substrate. As a result, the cleanliness of the substrate after the drying process is improved.

[0174] (Item 9) In the substrate lower surface drying device described in Item 8,

[0175] The continuous strip portion comprises:

[0176] A first strip-shaped portion extending linearly for a predetermined length from the first end portion toward the second end portion in a plan view and obliquely rearward with reference to the first direction;

[0177] A second strip-shaped portion extending linearly for a predetermined length from the second end portion toward the first end portion in a plan view and obliquely rearward with reference to the first direction; and

[0178] A curved portion where the rear end of the first strip-shaped portion is connected to the rear end of the second strip-shaped portion,

[0179] The bent portion may also be the portion of the continuous strip portion.

[0180] In this case, when the gas collision region moves toward the first direction on the lower surface of the substrate, a portion of the droplets attached to the lower surface of the substrate is smoothly guided to the curved portion along the front edge of the first strip-shaped portion. In addition, another portion of the droplets attached to the lower surface of the substrate is smoothly guided to the curved portion along the front edge of the second strip-shaped portion. Therefore, the droplets attached to the portion on the path of the gas collision region located on the lower surface of the substrate are prevented from moving to a portion deviated from the path of the gas collision region on the lower surface of the substrate and remaining.

[0181] (Item 10) In the substrate lower surface drying device described in Item 8 or Item 9,

[0182] The length between the first end and the second end of the gas collision region in the second direction may be greater than or equal to the maximum length of a predetermined drying target region on the lower surface of the substrate in the second direction.

[0183] In this case, by moving the gas collision region so as to pass through the entire drying target region, it is prevented that liquid droplets remain on the drying target region on the lower surface of the substrate.

[0184] (Item 11) In the substrate lower surface drying device according to any one of Items 8 to 10,

[0185] The substrate lower surface drying device may further include a high temperature gas supply unit that supplies high temperature gas to the substrate held by the first substrate holding unit, the high temperature gas having a higher temperature than the gas sprayed from the first gas spray unit to the substrate.

[0186] In this case, when the first gas jet unit removes the liquid droplets attached to the substrate, the high-temperature gas can be supplied to the substrate, thereby heating the substrate with the high-temperature gas and improving the drying efficiency of the substrate.

[0187] (Item 12) The substrate cleaning device of Item 12 comprises:

[0188] The substrate lower surface drying device according to any one of items 8 to 11;

[0189] First cleaning department;

[0190] a second substrate holding portion that rotates the substrate while sucking and holding at least a portion of the central region of the lower surface of the substrate;

[0191] a second cleaning section that cleans an area outside a lower surface of the substrate held and rotated by the second substrate holding section; and

[0192] Control Department,

[0193] The first substrate holding portion of the substrate lower surface drying device is configured to hold the substrate by abutting against an outer edge of the substrate.

[0194] The first cleaning unit cleans a central area of ​​a lower surface of the substrate held by the first substrate holding unit.

[0195] The control unit controls the substrate lower surface drying device, the first cleaning unit, the second substrate holding unit and the second cleaning unit to sequentially perform a first cleaning process for cleaning the outer area of ​​the lower surface of the substrate using the second cleaning unit, a first drying process for removing droplets attached to the outer area of ​​the lower surface of the substrate due to the first cleaning process, a second cleaning process for cleaning the central area of ​​the lower surface of the substrate using the first cleaning unit, and a second drying process for removing droplets attached to the central area of ​​the lower surface of the substrate due to the second cleaning process using the substrate lower surface drying device.

[0196] In the substrate cleaning device, a first cleaning process and a first drying process are performed while at least a portion of the central area of ​​the lower surface of the substrate is held by the second substrate holding portion. Thereafter, a second cleaning process and a second drying process are performed while the substrate is held by the first substrate holding portion. Thus, after the first drying process, in the case where adsorption marks due to the second substrate holding portion are formed in the central area of ​​the lower surface of the substrate, the adsorption marks are also removed by the second cleaning process. In addition, during the second drying process, the central area of ​​the lower surface of the substrate is dried by the substrate lower surface drying device. As a result, the overall cleanliness of the lower surface of the substrate after the above series of processes is improved.

[0197] According to the substrate lower surface drying device of the above series of embodiments, the cleanliness of the substrate during the drying of the lower surface of the substrate is improved, so the yield of the product obtained by substrate processing is improved. Therefore, since useless substrate processing is reduced, energy saving of substrate processing can be achieved. In addition, since the use of useless chemical liquids can be reduced, it can help reduce pollution to the earth's environment.

Claims

1. A substrate lower surface drying device, comprising: a first substrate holding portion for holding a substrate; a first gas injection portion that injects gas from below toward the substrate held by the first substrate holding portion; The second gas injection unit injects gas from above the substrate held by the first substrate holding unit toward at least a portion of an outer edge of the substrate held by the first substrate holding unit in a plan view when the first gas injection unit is used to inject gas toward the substrate.

2. The substrate lower surface drying device according to claim 1, wherein: The device further comprises a relative moving portion, which moves the first gas ejecting portion in a manner such that the first gas ejecting portion moves relative to the substrate held by the first substrate holding portion in a first direction when the first gas ejecting portion ejects gas. The at least a portion of the outer edge of the substrate held by the first substrate holding portion is located on a travel path of the first gas ejecting portion or on an extension line of the travel path in a plan view.

3. The substrate lower surface drying device according to claim 2, wherein: A gas collision region on the lower surface of the substrate that receives the gas ejected from the first gas ejection unit includes: a first end portion and a second end portion separated from each other in a second direction orthogonal to the first direction; and A continuous strip portion extends continuously between the first end portion and the second end portion.

4. The substrate lower surface drying device according to claim 3, wherein: The length of the gas collision region between the first end and the second end in the second direction is equal to or longer than the maximum length of a predetermined drying target region on the lower surface of the substrate in the second direction.

5. The substrate lower surface drying device according to any one of claims 1 to 4, wherein: A high temperature gas supply unit is further provided for supplying a high temperature gas to the substrate held by the first substrate holding unit, wherein the high temperature gas has a higher temperature than the gas sprayed from the first gas spray unit to the substrate.

6. The substrate lower surface drying device according to claim 3 or 4, wherein: A portion of the continuous strip-shaped portion of the gas collision region is located rearwardly of the first end portion and the second end portion in the first direction, and rearwardly of another portion of the continuous strip-shaped portion in the first direction.

7. A substrate cleaning device comprising: The substrate lower surface drying device according to any one of claims 1 to 6; First cleaning department; a second substrate holding portion that rotates the substrate while sucking and holding at least a portion of a central region of a lower surface of the substrate; a second cleaning section that cleans an area outside a lower surface of the substrate held and rotated by the second substrate holding section; and Control Department, The first substrate holding portion of the substrate lower surface drying device is configured to hold the substrate by abutting against an outer edge of the substrate. The first cleaning unit cleans a central area of ​​a lower surface of the substrate held by the first substrate holding unit. The control unit controls the substrate lower surface drying device, the first cleaning unit, the second substrate holding unit and the second cleaning unit to sequentially perform a first cleaning process for cleaning the outer area of ​​the lower surface of the substrate using the second cleaning unit, a first drying process for removing droplets attached to the outer area of ​​the lower surface of the substrate due to the first cleaning process, a second cleaning process for cleaning the central area of ​​the lower surface of the substrate using the first cleaning unit, and a second drying process for removing droplets attached to the central area of ​​the lower surface of the substrate due to the second cleaning process using the substrate lower surface drying device.

8. A substrate lower surface drying device, comprising: a first substrate holding portion for holding a substrate; a first gas injection portion that injects gas from below toward the substrate held by the first substrate holding portion; and a relative moving portion that moves the first gas ejecting portion in a manner that causes the first gas ejecting portion to move relative to the substrate held by the first substrate holding portion toward a first direction when the first gas ejecting portion ejects gas; A gas collision region on the lower surface of the substrate receiving the gas ejected from the first gas ejecting portion includes a first end and a second end separated from each other in a second direction orthogonal to the first direction, and a continuous strip portion extending continuously between the first end and the second end. A portion of the continuous strip-shaped portion is located rearwardly compared to the first end portion and the second end portion in the first direction, and is located rearwardly compared to another portion of the continuous strip-shaped portion in the first direction.

9. The substrate lower surface drying device according to claim 8, wherein: The continuous strip has: A first strip-shaped portion extending linearly for a predetermined length from the first end portion toward the second end portion in a plan view and obliquely rearward with reference to the first direction; A second strip-shaped portion extending linearly for a predetermined length from the second end portion toward the first end portion in a plan view and obliquely rearward with reference to the first direction; and A curved portion where the rear end of the first strip-shaped portion is connected to the rear end of the second strip-shaped portion, The curved portion is the portion of the continuous strip.

10. The substrate lower surface drying device according to claim 8 or 9, wherein: The length of the gas collision region between the first end and the second end in the second direction is equal to or longer than the maximum length of a predetermined drying target region on the lower surface of the substrate in the second direction.

11. The substrate lower surface drying device according to any one of claims 8 to 10, wherein: A high temperature gas supply unit is further provided for supplying a high temperature gas to the substrate held by the first substrate holding unit, wherein the high temperature gas has a higher temperature than the gas sprayed from the first gas spray unit to the substrate.

12. A substrate cleaning device comprising: The substrate lower surface drying device according to any one of claims 8 to 11; First cleaning department; a second substrate holding portion that rotates the substrate while sucking and holding at least a portion of the central region of the lower surface of the substrate; a second cleaning section that cleans an area outside a lower surface of the substrate held and rotated by the second substrate holding section; and Control Department, The first substrate holding portion of the substrate lower surface drying device is configured to hold the substrate by abutting against an outer edge of the substrate. The first cleaning unit cleans a central area of ​​a lower surface of the substrate held by the first substrate holding unit. The control unit controls the substrate lower surface drying device, the first cleaning unit, the second substrate holding unit and the second cleaning unit to sequentially perform a first cleaning process for cleaning the outer area of ​​the lower surface of the substrate using the second cleaning unit, a first drying process for removing droplets attached to the outer area of ​​the lower surface of the substrate due to the first cleaning process, a second cleaning process for cleaning the central area of ​​the lower surface of the substrate using the first cleaning unit, and a second drying process for removing droplets attached to the central area of ​​the lower surface of the substrate due to the second cleaning process using the substrate lower surface drying device.

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