Wafer rotating mechanism, process equipment of semiconductor device and process method of semiconductor device

Abstract

The invention discloses a wafer rotating mechanism, process equipment of a semiconductor device and a process method of the semiconductor device. The wafer rotating mechanism comprises an auxiliary cavity which is located at one side of the main reaction cavity and is communicated with the main reaction cavity; the rotary bearing assembly is located in the auxiliary cavity; and a controller configured to: in response to completion of deposition of a first layer of thin film on the surface of the wafer in the main reaction chamber, jack up the wafer from the heating disc; feeding the rotary bearing assembly to the lower part of the wafer in the main reaction cavity; enabling the wafer to fall onto a rotary bearing assembly, and carrying out the rotation of the wafer; in response to completion of rotation of the wafer, the wafer is jacked up from the rotary bearing assembly; the rotary bearing assembly is moved out of the main reaction cavity; and enabling the rotated wafer to fall back to the heating disc, and carrying out the deposition of a second layer of thin film. According to the invention, the risk of process pollution caused by the fact that the wafer is moved out of the reaction cavity by means of an external transmission unit can be avoided, and meanwhile, the uniformity of the film thickness in the laminated deposition process can be improved, so that the film thickness is accurately controlled.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing, and in particular to a wafer rotating mechanism, a process equipment for a semiconductor device, a process method for a semiconductor device, and a computer-readable storage medium. Background Art

[0002] When semiconductor device process equipment is performing lamination process, the thickness of the lamination coating is relatively thick, so the film thickness range parameters of each layer of film coated on the wafer surface during coating need to be strictly controlled. However, when coating in the same reaction chamber, since the positions of the spray plate for spraying reaction gas in the reaction chamber and the heating plate for supporting the wafer are relatively fixed, the location where the film is thick will always be thicker during the coating process, and the location where the film is thin will always be thinner.

[0003] The commonly used solution at present usually requires the use of an external transmission unit to move the wafer out of the reaction chamber for rotation. For example, the wafer can be moved out of the reaction chamber by an external transmission unit and sent to an external rotating device for rotation, and then sent back to the original reaction chamber. However, this operation of sending the wafer out of the reaction chamber during the film coating is easy to cause particles on the surface of the wafer, thereby causing subsequent film contamination. Another method is to use an external revolving transfer device (indexer) to shift and rotate the wafer between multiple reaction chambers, but this operation requires that multiple chambers be connected to each other, and the connected multiple chambers may cause contamination to each other. In response to this, a rotatable heating plate has also appeared in the prior art, but if this method is adopted, the relative position between the wafer and the heating plate remains unchanged. Therefore, the improvement of the uniformity of the overall film thickness on the wafer surface is still limited, and the target film thickness uniformity requirement of the lamination process cannot be achieved.

[0004] In order to solve the above-mentioned problems existing in the prior art, the art is in urgent need of a wafer rotation technology that can avoid the risk of process contamination caused by moving the wafer out of the reaction chamber with the help of an external transmission unit, while also ensuring the concentricity of the thin film deposition morphology on the wafer surface, and improving the uniformity of the film thickness in the stacking deposition process, thereby accurately controlling the film thickness. Summary of the invention

[0005] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0006] In order to overcome the above-mentioned defects of the prior art, the present invention provides a wafer rotation mechanism, a process equipment for a semiconductor device, a process method for a semiconductor device, and a computer-readable storage medium, which can avoid the risk of process contamination caused by the wafer being moved out of the reaction chamber with the help of an external transmission unit, while also ensuring the concentricity of the thin film deposition morphology on the wafer surface, improving the uniformity of the film thickness in the stacking deposition process, and thus accurately controlling the film thickness.

[0007] Specifically, the wafer rotation mechanism provided according to the first aspect of the present invention includes: a sub-chamber, located on one side of the main reaction chamber and connected to the main reaction chamber; a rotating support assembly, located inside the sub-chamber; and a controller, configured to: in response to the completion of the first layer of thin film deposition on the surface of the wafer in the main reaction chamber, lift the wafer from the heating plate; send the rotating support assembly under the wafer in the main reaction chamber; drop the wafer onto the rotating support assembly to rotate the wafer; in response to the completion of the rotation of the wafer, lift the wafer from the rotating support assembly; move the rotating support assembly out of the main reaction chamber; and drop the rotated wafer back onto the heating plate to deposit a second layer of thin film.

[0008] Furthermore, in some embodiments of the present invention, the cavity wall of the sub-chamber is provided with an air inlet, and when a thin film deposition process is performed in the main reaction chamber, the air inlet continuously introduces a purge gas into the sub-chamber, so that the purge gas forms an air curtain at the connecting port between the sub-chamber and the main reaction chamber.

[0009] Furthermore, in some embodiments of the present invention, the bottom plate of the sub-cavity is a slider structure, and the rotating support assembly is located on the slider structure. The slider structure is driven by a sliding motor on a slide table to drive the rotating support assembly in the sub-cavity into or out of the main reaction chamber.

[0010] Furthermore, in some embodiments of the present invention, a bellows is provided at the connection between the auxiliary chamber and the main reaction chamber for dynamic sealing when the auxiliary chamber approaches or moves away from the main reaction chamber.

[0011] Furthermore, in some embodiments of the present invention, the sub-cavity includes a first sealing ring, which is located between the side wall of the sub-cavity and the slider structure and is used for end face sealing of the side wall of the sub-cavity.

[0012] Furthermore, in some embodiments of the present invention, the rotating support assembly includes a rotating motor and a movable tray. The rotating motor is connected to the movable tray via a transmission rod, and the movable tray is driven to rotate via the transmission of the transmission rod.

[0013] Furthermore, in some embodiments of the present invention, the rotating motor is a disk motor, which includes a stator and a rotor, and the rotor is connected to the transmission rod, wherein the rotor rotates driven by the torque generated in the magnetic field after the stator is energized, and drives the movable tray to rotate synchronously via the transmission rod.

[0014] Furthermore, in some embodiments of the present invention, the auxiliary cavity includes a second sealing ring, and the second sealing ring is located between the auxiliary cavity and the rotating motor, and is used for axially sealing the auxiliary cavity.

[0015] In addition, the process equipment of the above-mentioned semiconductor device provided according to the second aspect of the present invention includes: a main reaction chamber, which is provided with a heating plate inside, on which the wafer is carried for performing a thin film deposition process; a lift pin, which is liftably provided on the heating plate, and is used to lift up or drop back the wafer; and the above-mentioned wafer rotation mechanism provided by the first aspect of the present invention, which is provided on one side of the main reaction chamber, and is used to cooperate with the lift pin to complete the self-rotation operation of the wafer in the main reaction chamber after the first layer of thin film deposition is completed on the surface of the wafer, and drop the rotated wafer back onto the heating plate for second layer of thin film deposition.

[0016] Furthermore, in some embodiments of the present invention, the process equipment of the above-mentioned semiconductor device also includes: multiple main reaction chambers, and a corresponding wafer rotation mechanism is provided on one side of each of the main reaction chambers, which is used to independently rotate multiple wafers in the multiple main reaction chambers.

[0017] In addition, the process method of the above-mentioned semiconductor device provided according to the third aspect of the present invention includes the following steps: in response to the completion of the first layer of thin film deposition on the surface of the wafer in the reaction chamber of the process equipment of the above-mentioned semiconductor device provided by the second aspect of the present invention, the wafer is lifted from the heating plate; the rotating support assembly is sent to the bottom of the wafer in the main reaction chamber; the wafer is dropped onto the rotating support assembly to rotate the wafer; in response to the completion of the rotation of the wafer, the wafer is lifted from the rotating support assembly; the rotating support assembly is moved out of the main reaction chamber; and the rotated wafer is dropped back onto the heating plate to deposit a second layer of thin film.

[0018] In addition, according to the fourth aspect of the present invention, there is also provided a computer-readable storage medium on which computer instructions are stored. When the computer instructions are executed by a processor, the process method of the semiconductor device provided by the third aspect of the present invention is implemented. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0020] Figure 1 A schematic diagram of a top view of a semiconductor device process equipment provided according to some embodiments of the present invention is shown;

[0021] Figure 2 A schematic structural diagram of a semiconductor device process equipment provided according to some embodiments of the present invention is shown;

[0022] Figure 3 A side cross-sectional view of a wafer rotation mechanism provided according to some embodiments of the present invention is shown;

[0023] Figure 4 Shows Figure 3 A front schematic diagram of a wafer rotation mechanism is shown; and

[0024] Figure 5 A flow chart of a process method for a semiconductor device provided according to some embodiments of the present invention is shown.

[0025] Reference numerals:

[0026] 100 Process equipment for semiconductor devices;

[0027] 110 main reaction chamber;

[0028] 120 heating plate;

[0029] 121 thimble;

[0030] 200 wafer rotation mechanism;

[0031] 210 secondary cavity;

[0032] 211 Air intake;

[0033] 220 Rotating support assembly;

[0034] 230 bellows;

[0035] 240 slide;

[0036] 241 Slider structure;

[0037] 242 Sliding motor;

[0038] 250 fixed base;

[0039] 260 wiring channel;

[0040] 310 Rotating electrical machines;

[0041] 311 stator;

[0042] 312 rotor;

[0043] 320 transmission rod;

[0044] 331 first sealing ring;

[0045] 332 second sealing ring;

[0046] 340 movable trays; and

[0047] Steps S510~S560. DETAILED DESCRIPTION

[0048] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0049] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0050] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0051] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0052] As mentioned above, the commonly used solution currently usually requires the use of an external transmission unit to move the wafer out of the reaction chamber for rotation. For example, the wafer can be moved out of the reaction chamber by an external transmission unit and sent to an external rotating device for rotation, and then sent back to the original reaction chamber. However, this operation of sending the wafer out of the reaction chamber during the film layer is halfway through plating, which easily causes the surface of the wafer to be stained with particles, thereby causing subsequent film contamination. Another method is to use an external revolving transfer and transmission device (indexer) to shift and rotate the wafer between multiple reaction chambers, but this operation requires that multiple chambers be connected to each other, and the opened multiple chambers may cause contamination to each other. In response to this, a rotatable heating plate has also appeared in the prior art, but if this method is adopted, the relative position between the wafer and the heating plate remains unchanged, so the improvement of the uniformity of the overall film thickness on the wafer surface is still limited, and the target film thickness uniformity requirement of the lamination process cannot be achieved.

[0053] In order to solve the above-mentioned problems existing in the prior art, the present invention provides a wafer rotation mechanism, a process equipment for a semiconductor device, a process method for a semiconductor device, and a computer-readable storage medium, which can avoid the risk of process contamination caused by the wafer being moved out of the reaction chamber with the help of an external transmission unit, and at the same time can improve the uniformity of film thickness in the stacking deposition process, thereby accurately controlling the film thickness.

[0054] In some non-limiting embodiments, the wafer rotation mechanism provided in the first aspect of the present invention can be configured in the process equipment of the semiconductor device provided in the second aspect of the present invention, and used to implement the process method of the semiconductor device provided in the third aspect of the present invention.

[0055] Specifically, in some non-limiting embodiments, the computer-readable storage medium provided in the fourth aspect of the present invention stores computer instructions, which, when executed by a processor, can be used to implement the semiconductor device process method provided in the third aspect of the present invention.

[0056] The working principle of the above-mentioned wafer rotation mechanism will be described below in conjunction with some process equipment of semiconductor devices and embodiments of process methods of semiconductor devices. Those skilled in the art will understand that the embodiments of process equipment of these semiconductor devices and process methods of semiconductor devices are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit all working modes or all functions of such wafer rotation mechanisms. Similarly, the wafer rotation mechanism is also only a non-limiting implementation method provided by the present invention, and does not constitute a limitation on the configuration objects in the process equipment of these semiconductor devices and the implementation subjects of each step in the process method of semiconductor devices.

[0057] Please see Figure 1 , Figure 1 A schematic top view of the structure of a semiconductor device process equipment provided according to some embodiments of the present invention is shown.

[0058] like Figure 1 As shown, in some embodiments of the present invention, the process equipment 100 of the semiconductor device may include a main reaction chamber 110 and a wafer rotation mechanism 200. A heating plate 120 may be provided inside the main reaction chamber 110, on which a wafer is carried for a thin film deposition process. Furthermore, a plurality of ejectors 121 are provided on the heating plate 120 so as to be liftable, which can assist the robot in wafer transfer, including lifting or dropping the wafer. The wafer rotation mechanism 200 may be provided on one side of the main reaction chamber 110, and is used to cooperate with the ejector 121 to complete the self-rotation operation of the wafer in the main reaction chamber 110 after the first layer of thin film deposition is completed on the surface of the wafer in the main reaction chamber 110, and drop the rotated wafer back onto the heating plate 120 for the second layer of thin film deposition.

[0059] like Figure 1 As shown, in some preferred embodiments, the process equipment 100 of the semiconductor device may further include a plurality of main reaction chambers 110. The side wall of each main reaction chamber 110 may be provided with a corresponding wafer rotation mechanism 200, which may be used to independently rotate multiple wafers in the plurality of main reaction chambers 110. That is to say, in the above-mentioned embodiments provided by the present invention, the independent wafer rotation function of a single chamber, a two-chamber, or even a multi-chamber machine may be realized respectively, which can not only reduce the particle size of the thin film deposited on the surface of the wafer and improve the particle size (particle, PA) performance of the wafer, but also improve the wafer output per hour (wafer per hour, WPH) of the process equipment 100 of the semiconductor device.

[0060] Specifically, see Figure 2 , Figure 2A schematic structural diagram of a semiconductor device process equipment provided according to some embodiments of the present invention is shown.

[0061] like Figure 2 As shown, in some embodiments of the present invention, the wafer rotation mechanism 200 can be fixed to the side wall of the corresponding main reaction chamber 110 through a fixed base 250. The wafer rotation mechanism 200 mainly includes a sub-chamber 210, a rotation support assembly 220, and a controller. The sub-chamber 210 can be located on one side of the main reaction chamber 110 and connected to the main reaction chamber 110. The rotation support assembly 220 can be located inside the sub-chamber 210.

[0062] The controller can be configured as follows: first, in response to the completion of the first layer of thin film deposition on the surface of the wafer in the main reaction chamber 110, the wafer can be lifted from the heating plate 120 by the ejector pin 121. Then, the controller can send the rotating support assembly 220 to the bottom of the wafer in the main reaction chamber 110. After that, the controller can control the wafer to fall onto the rotating support assembly 220 to rotate the wafer. Then, in response to the completion of the rotation of the wafer, the controller can control the ejector pin 121 to rise and lift the wafer from the rotating support assembly 220. Then, the controller can move the rotating support assembly 220 out of the main reaction chamber 110. Finally, the controller can control the ejector pin 121 to fall again, and the rotated wafer can fall back onto the heating plate 120 to deposit the second layer of thin film.

[0063] like Figure 2 As shown, preferably, the chamber wall of the sub-chamber 210 may be provided with an air inlet 211 to realize a bellow purge function. Specifically, the air inlet 211 may continuously introduce a purge gas into the sub-chamber 210 when a thin film deposition process is performed in the main reaction chamber 110. Optionally, the purge gas may be an inert gas such as nitrogen or argon, which functions to form a layer of air curtain in the vacuum area of ​​the connection port between the sub-chamber 210 and the main reaction chamber 110, thereby preventing the reaction gas, deposition reactants, etc. in the main reaction chamber 110 from entering the sub-chamber 210, resulting in the accumulation of particles (powder) inside the sub-chamber 210 during the deposition process.

[0064] Furthermore, the gas switch connected to the gas inlet 211 for realizing the lower purge function is usually in a normally open state. The flow rate of the introduced purge gas can be, for example, 100-1000sccm, according to the actual test results, as long as the gas flow rate of the introduced purge gas does not affect the flow field uniformity of the reaction gas in the main reaction chamber 110. When the wafer self-spin operation is required in the main reaction chamber 110, that is, when the sub-chamber 210 is close to the main reaction chamber 110, the gas switch connected to the gas inlet 211 is closed, and the introduction of the purge gas is stopped, in order to avoid affecting the gas flow field of the reaction gas in the main reaction chamber 110 for the thin film deposition process.

[0065] Please continue as Figure 2 As shown, in some optional embodiments, in order to realize the movement of sending the rotating support assembly 220 in the above-mentioned sub-cavity 210 into or out of the main reaction chamber 110, optionally, the bottom plate of the sub-cavity 210 can be a slider structure 241, and the rotating support assembly 220 can be located on the slider structure 241, and the slider structure 241 can be driven by the sliding motor 242 on the slide 240 to drive the rotating support assembly 220 in the sub-cavity 210 to be sent into or out of the main reaction chamber 110. In other embodiments, other movable mechanisms can also be selected to drive the rotating support assembly 220 in the sub-cavity 210 to move, so as to realize the movement of sending the rotating support assembly 220 into or out of the main reaction chamber 110.

[0066] In some other optional embodiments, the sub-cavity 210 as a whole can be used as a movable body. Figure 2 As shown, in order to achieve the overall translational movement of the sub-chamber 210 relative to the main reaction chamber 110, a bellows 230 may be provided at the vacuum connection between the sub-chamber 210 and the main reaction chamber 110 for dynamic sealing when the sub-chamber 210 approaches or moves away from the main reaction chamber 110.

[0067] For further information, see Figure 3 , Figure 3 A side cross-sectional view of a wafer rotation mechanism provided according to some embodiments of the present invention is shown.

[0068] like Figure 3 As shown, in some embodiments, the interior of the sub-cavity 210 may include a first sealing ring 331. The first sealing ring 331 may be located between the side wall of the sub-cavity 210 and the slider structure 241, and is used to perform end face sealing on the side wall of the sub-cavity 210, so that the sealing surface can still fit tightly when the side wall of the sub-cavity 210 and its bottom are slightly relatively slid.

[0069] Combination Figure 2 and Figure 3 Referring to the above, inside the sub-cavity 210, the rotating support assembly 220 may include a rotating motor 310 and a movable tray 340, wherein the rotating motor 310 may serve as a rotating power source for the movable tray 340. The rotating motor 310 may be connected to the movable tray 340 via a transmission rod 320, and the movable tray 340 may be driven to rotate via the transmission of the transmission rod 320. Optionally, the transmission rod 320 may be a transmission structure such as a four-link or a gear rack.

[0070] Furthermore, a wiring channel 260 may be reserved below the side wall of the auxiliary cavity 210 to facilitate the wiring and routing of the internal rotating motor 310 and the like.

[0071] Further, optionally, see Figure 4 , Figure 4 Shows Figure 3 A front schematic diagram of the wafer rotation mechanism is shown.

[0072] like Figure 4 As shown, the rotating motor 310 may be a disc motor, which has the advantages of simple structure, small size, high power density, etc. The disc motor may include a stator 311 and a rotor 312, and is connected to the transmission rod 320 via the rotor 312. The working principle of the disc motor is mainly based on the rotor 312, the stator 311, the magnetic field and the current.

[0073] Combination Figure 3 and Figure 4 As shown, specifically, the rotor 312 of the disk motor is usually composed of a circular magnet, and the two sides of the magnet are divided into two electrodes. The magnetic field is generated on the electrodes by the current, so that the magnet on the rotor 312 is subjected to a torque. The stator 311 is composed of a coil and a magnet. The coil is fixed to the bottom of the sub-cavity 210, and the magnet of the stator 311 can be fixed inside the rotor 312. When the current passes through the coil, the generated magnetic field will interact with the magnet on the rotor 312, thereby generating a torque to drive the rotor 312 to rotate. As the rotor 312 rotates, the transmission rod 320 connected to the rotor 312 can drive the movable tray 340 to rotate synchronously. Furthermore, the disk motor as a rotating motor 310 can also control the speed and direction of the rotor 312 by changing the magnitude and direction of the current to adjust the speed and direction of the movable tray 340, thereby indirectly realizing the precise rotation of the wafer supported by the movable tray 340.

[0074] Furthermore, if Figure 3 As shown, in an embodiment of the present invention, the diameter of the movable tray 340 is preferably smaller than the spacing between adjacent ejector pins 121 on the heating plate 120, so that the movable tray 340 can smoothly extend under the wafer through the spacing between two adjacent ejector pins 121 and move out from under the wafer.

[0075] Continue as Figure 3 As shown, in order to further ensure the air tightness of the chamber in the rotary application environment in the auxiliary chamber 210, a second sealing ring 332 can be disposed in the auxiliary chamber 210. The second sealing ring 332 can be located between the auxiliary chamber 210 and the rotary motor 310 to axially seal the auxiliary chamber 210.

[0076] Next, see Figure 5 , Figure 5A flowchart of a semiconductor device process method provided according to some embodiments of the present invention is shown. The wafer rotating mechanism 200 and the semiconductor device process equipment 100 will be further described below in conjunction with a semiconductor device process method provided in another aspect of the present invention.

[0077] like Figure 5 As shown, in some embodiments of the present invention, the process method of the semiconductor device may include the following steps: First, step S510 may be performed: in response to the completion of the first layer of thin film deposition on the surface of the wafer in the main reaction chamber of the process equipment of the semiconductor device, the wafer is lifted from the heating plate.

[0078] Specifically, combined Figure 2 It is commonly understood that in some embodiments of the present invention, a wafer is placed on a heating plate 120 in a main reaction chamber 110 of a process equipment 100 for semiconductor devices to perform a thin film deposition process. When a thin film deposition process is performed in the main reaction chamber 110, a switch for a purge gas connected to the air inlet 211 is in a normally open state, and is used to continuously introduce a purge gas into the sub-chamber 210 through the air inlet 211. Optionally, an inert gas such as nitrogen or argon can be selected as the purge gas, and its function is to form a layer of air curtain in the vacuum area of ​​the connection port between the sub-chamber 210 and the main reaction chamber 110, thereby preventing the reaction gas, deposition reactants, etc. in the main reaction chamber 110 from entering the sub-chamber 210, resulting in the accumulation of particles (powder) inside the sub-chamber 210 during the deposition process.

[0079] After the first layer of thin film deposition is completed on the wafer surface, the purge gas switch connected to the gas inlet 211 can be turned off to stop the introduction of the purge gas in order to avoid affecting the gas flow field of the reaction gas in the thin film deposition process in the main reaction chamber 110. At this time, the controller can control the multiple ejector pins 121 on the heating plate 120 to rise to lift the wafer from the heating plate 120.

[0080] Then, step S520 may be performed: moving the rotating support assembly into the main reaction chamber under the wafer.

[0081] Specifically, combined Figure 2 It is commonly understood that the controller can control the sliding motor 242 to drive the slider structure 241 at the bottom of the sub-chamber 210 to slide on the slide 240 toward the main reaction chamber 110, so that the movable tray 340 in the rotating support assembly 220 above the slider structure 241 can be sent to the bottom of the wafer in the main reaction chamber 110 through the gap between two adjacent ejector pins 121.

[0082] Then, step S530 may be performed: dropping the wafer onto the rotating support assembly to rotate the wafer.

[0083] Specifically, combined Figure 2 and Figure 3 It is commonly understood that the controller can control each ejector pin 121 to descend so that the wafer falls onto the movable tray 340 of the rotating support assembly 220 in the main reaction chamber 110. Subsequently, the controller can control the rotating motor 310 to rotate, so that the movable tray 340 can be driven to rotate through the transmission of the transmission rod 320 connected to the movable tray 340. In some optional embodiments, the rotating motor 310 can use a disk motor, and the disk motor can include a stator 311 and a rotor 312, and the rotor 312 is connected to the transmission rod 320. The rotor 312 can rotate under the drive of the torque generated in the magnetic field after the stator 311 is energized, and the movable tray 340 is driven to rotate synchronously via the transmission rod 320. At this time, the wafer falling on the movable tray 340 can be self-rotated in the main reaction chamber 110 via the movable tray 340.

[0084] Furthermore, the disk motor serving as the rotary motor 310 can also control the speed and direction of the rotor 312 by changing the magnitude and direction of the current to adjust the speed and direction of the movable tray 340 , thereby indirectly achieving precise rotation of the wafer supported by the movable tray 340 .

[0085] Afterwards, step S540 may be performed: in response to the wafer completing rotation, lifting the wafer from the rotating support assembly.

[0086] Specifically, combined Figure 2 and Figure 3 It is commonly understood that after the wafer in the main reaction chamber 110 has completed its rotation on the movable tray 340 , the controller can again control the plurality of ejector pins 121 on the heating plate 120 to rise, so as to lift the wafer from the movable tray 340 .

[0087] Then, step S550 may be performed: moving the rotating support assembly out of the main reaction chamber.

[0088] Specifically, combined Figure 2 and Figure 3 It is commonly understood that the controller can control the sliding motor 242 again to drive the slider structure 241 at the bottom of the auxiliary chamber 210 to slide on the slide 240 in a direction away from the main reaction chamber 110, and the movable tray 340 in the rotating support assembly 220 above the slider structure 241 can be moved out of the main reaction chamber 110 through the gap between two adjacent ejector pins 121.

[0089] Finally, step S560 may be performed: dropping the rotated wafer back onto the heating plate to perform second thin film deposition.

[0090] Specifically, please continue to combine Figure 2 and Figure 3It is commonly understood that the controller can control each ejector pin 121 to descend so that the wafer falls back onto the heating plate 120 in the main reaction chamber 110 for deposition of the second thin film. At this time, the switch of the purge gas connected to the air inlet 211 can continue to be in a normally open state, for continuously passing the purge gas into the sub-chamber 210 through the air inlet 211, so as to form a layer of air curtain in the vacuum area of ​​the connection port between the sub-chamber 210 and the main reaction chamber 110, thereby preventing the reaction gas, deposition reactants, etc. in the main reaction chamber 110 from entering the sub-chamber 210, resulting in the accumulation of particles inside the sub-chamber 210 during the deposition process.

[0091] For example, in a main reaction chamber 110 in a semiconductor device process equipment 100, a stacking deposition process of 125 layers of thin film deposition is required, and the single rotation angle of the movable tray 340 can be pre-set in the controller, for example, the single rotation angle can be 120°. Then, through the semiconductor device process method including steps S510 to S560, a stacking process is performed in the semiconductor device process equipment 100, so that the wafer can realize self-rotation in the main reaction chamber 110, solving the problem that the wafer surface film thickness parameter is high and difficult to accurately control in the current stacking process, and at the same time, no additional particle pollution is generated due to the wafer being moved out of the main reaction chamber 110 for rotation.

[0092] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0093] In summary, the present invention provides a wafer rotation mechanism, a process equipment for a semiconductor device, a process method for a semiconductor device, and a computer-readable storage medium, which can avoid the risk of process contamination caused by moving the wafer out of the reaction chamber with the help of an external transmission unit, while also ensuring the concentricity of the thin film deposition morphology on the wafer surface, improving the uniformity of the film thickness in the stacking deposition process, and thus accurately controlling the film thickness.

[0094] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A wafer rotation mechanism, characterized in that: include: The secondary chamber is located at one side of the main reaction chamber and is connected to the main reaction chamber; A rotating support assembly is located inside the auxiliary cavity; as well as A controller is configured to: in response to completion of the first thin film deposition on the surface of the wafer in the main reaction chamber, lift the wafer from the heating plate; The rotating support assembly is sent to the bottom of the wafer in the main reaction chamber; the wafer is dropped onto the rotating support assembly to rotate the wafer; In response to the wafer completing rotation, the wafer is lifted from the rotating support assembly; the rotating support assembly is moved out of the main reaction chamber; and the rotated wafer is dropped back onto the heating plate to perform a second layer of thin film deposition.

2. The wafer rotation mechanism according to claim 1, wherein: The cavity wall of the sub-cavity is provided with an air inlet, and when a thin film deposition process is performed in the main reaction chamber, the air inlet continuously introduces a purge gas into the sub-cavity, so that the purge gas forms an air curtain at the connection port between the sub-cavity and the main reaction chamber.

3. The wafer rotation mechanism according to claim 1, wherein: The bottom plate of the sub-cavity is a slider structure, and the rotating support assembly is located on the slider structure. The slider structure is driven by a sliding motor on a slide table to drive the rotating support assembly in the sub-cavity to be sent into or moved out of the main reaction chamber.

4. The wafer rotating mechanism according to claim 3, characterized in that: A bellows is provided at the connection between the auxiliary chamber and the main reaction chamber, which is used for dynamic sealing when the auxiliary chamber approaches or moves away from the main reaction chamber.

5. The wafer rotating mechanism according to claim 3, characterized in that: The auxiliary cavity includes a first sealing ring, which is located between the side wall of the auxiliary cavity and the slider structure and is used for end face sealing of the side wall of the auxiliary cavity.

6. The wafer rotating mechanism according to claim 1, wherein: The rotating support assembly comprises a rotating motor and a movable tray. The rotating motor is connected to the movable tray via a transmission rod, and the movable tray is driven to rotate via the transmission of the transmission rod.

7. The wafer rotating mechanism according to claim 6, wherein: The rotating motor is a disc motor, which includes a stator and a rotor, wherein the rotor is connected to the transmission rod, wherein the rotor rotates under the drive of the torque generated in the magnetic field after the stator is energized, and drives the movable tray to rotate synchronously via the transmission rod.

8. The wafer rotating mechanism according to claim 6, wherein: The auxiliary cavity includes a second sealing ring, which is located between the auxiliary cavity and the rotating motor and is used for axially sealing the auxiliary cavity.

9. A process equipment for a semiconductor device, characterized in that: include: The main reaction chamber has a heating plate inside which carries the wafer for the thin film deposition process; An ejector pin is movably disposed on the heating plate and is used to lift or drop the wafer; as well as The wafer rotation mechanism as described in any one of claims 1 to 8 is arranged on one side of the main reaction chamber, and is used to cooperate with the ejector pin to complete the self-rotation operation of the wafer in the main reaction chamber after the first layer of thin film deposition is completed on the surface of the wafer, and drop the rotated wafer back onto the heating plate for second layer of thin film deposition.

10. The process equipment according to claim 9, characterized in that Also includes: A plurality of main reaction chambers are provided with a corresponding wafer rotation mechanism on one side of each main reaction chamber, which is used to independently rotate a plurality of wafers in the plurality of main reaction chambers.

11. A process method for a semiconductor device, characterized in that: The following steps are involved: In response to completion of a first thin film deposition on a wafer surface in a main reaction chamber of a semiconductor device process equipment according to any one of claims 9 to 10, lifting the wafer from the heating plate; Sending a rotating support assembly into the main reaction chamber below the wafer; Dropping the wafer onto the rotating support assembly to rotate the wafer; In response to the wafer completing rotation, lifting the wafer from the rotation support assembly; Moving the rotating support assembly out of the main reaction chamber; as well as The rotated wafer is dropped back onto the heating plate to perform second thin film deposition.

12. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by a processor, the process method for a semiconductor device as claimed in claim 11 is implemented.

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