Quartz piece processing method and tube furnace system

Abstract

The invention discloses a quartz piece processing method and a tube furnace system, the quartz piece processing method comprises the following steps: providing a quartz piece to be processed, coating a passivation layer on a deposition area of the quartz piece to be processed, and depositing a deposition layer on the passivation layer; and bombarding the deposition layer on the deposition area of the quartz piece to be treated by using plasma etching gas, and reacting the deposition layer with the plasma etching gas to generate silicon-containing gas, thereby obtaining the treated quartz piece. The quartz piece processing method provided by the embodiment of the invention can improve the stability of a process implemented by using the quartz piece and prolong the service life of the quartz piece.

Description

Technical Field

[0001] The invention relates to the technical field of solar cell manufacturing, and in particular to a quartz piece processing method and a tube furnace system. Background Art

[0002] Tubular equipment accounts for an increasingly large proportion in the manufacture of solar cells, and quartz tubes, as an indispensable part of tubular equipment, play an increasingly prominent role. Among them, the process of growing silicon film by LPCVD (low-pressure chemical vapor deposition) is carried out in tubular equipment. Specifically, silane is thermally decomposed and deposited in a closed quartz tube, so that a layer of silicon film grows on the surface of the silicon wafer. As the number of times the quartz tube is used increases, the thickness of the silicon film deposited on the inner wall of the quartz tube gradually increases. The silicon film (mainly composed of polycrystalline silicon) attached to the inner wall of the quartz tube, on the one hand, causes differences in the thermal conductivity of the quartz tube, resulting in poor uniformity of the silicon film deposited on the silicon wafer, resulting in poor stability of the LPCVD process; on the other hand, it increases the stress on the inner wall of the quartz tube, causing the quartz tube to easily break, shortening the service life of the quartz tube. Summary of the invention

[0003] The present invention aims to solve one of the technical problems in the related art at least to a certain extent.

[0004] To this end, an embodiment of the present invention provides a quartz piece processing method to improve the stability of a process implemented using the quartz piece and extend the service life of the quartz piece.

[0005] The quartz piece processing method according to the embodiment of the present invention comprises the following steps:

[0006] Providing a quartz piece to be processed, wherein a deposition area of ​​the quartz piece to be processed is coated with a passivation layer, and a deposition layer is deposited on the passivation layer;

[0007] The deposition layer on the deposition area of ​​the quartz piece to be processed is bombarded with plasma etching gas, and the deposition layer reacts with the plasma etching gas to generate silicon-containing gas, thereby obtaining a processed quartz piece.

[0008] In some embodiments, bombarding the deposition layer on the deposition area of ​​the quartz piece to be processed with plasma etching gas includes:

[0009] The quartz piece to be processed cooperates with other components to form a closed chamber; or, the quartz piece to be processed is placed in a closed chamber surrounded by other components;

[0010] Plasma etching gas is passed into the closed chamber through the gas inlet of the closed chamber to bombard the deposition layer on the deposition area of ​​the quartz piece to be processed with the plasma etching gas; the silicon-containing gas is discharged through the exhaust port of the closed chamber.

[0011] In some embodiments, the step S32 further includes evacuating the closed chamber through an exhaust port of the closed chamber so that the silicon-containing gas in the closed chamber is exhausted.

[0012] In some embodiments, the closed chamber is evacuated through the exhaust port of the closed chamber to extract the silicon-containing gas through the exhaust port of the closed chamber.

[0013] In some embodiments, bombarding the deposition layer on the deposition area of ​​the quartz piece to be processed with plasma etching gas includes:

[0014] The plasma etching gas in the closed chamber is uniformly flowed so that the plasma etching gas is evenly distributed in the closed chamber.

[0015] In some embodiments, bombarding the deposition layer on the deposition area of ​​the quartz piece to be processed with plasma etching gas includes:

[0016] The plasma etching gas in the closed chamber is guided so that the plasma etching gas flows through the deposition area of ​​the quartz piece to be processed.

[0017] In some embodiments, the passivation layer is Al2O3; and / or the plasma etching gas is a plasma generated by ionizing an etching gas, and the etching gas includes one or more of NF3, CF4, CHF3, SF6 and C2F6.

[0018] The tubular furnace system of the embodiment of the present invention can implement the quartz piece processing method described in any of the above embodiments, and the tubular furnace system includes a furnace body, a quartz piece and a plasma generator, the furnace body has a furnace cavity, a first furnace body inlet, a second furnace body inlet and a furnace body outlet, the first furnace body inlet, the second furnace body inlet and the furnace body outlet are all connected to the furnace cavity, and the first furnace body inlet is for process gas to enter; the quartz piece is arranged in the furnace cavity, and the deposition area of ​​the quartz piece is coated with a passivation layer; the inlet of the plasma generator is for etching gas to enter, and the outlet of the plasma generator is connected to the second furnace body inlet so as to use plasma etching gas to bombard the deposition layer on the passivation layer.

[0019] In some embodiments, the quartz piece is a quartz tube with openings at both ends, the tube wall of the quartz piece is in contact with the side wall of the furnace body, the first furnace body inlet and the second furnace body inlet are arranged on one side of the length direction of the quartz piece, and the second furnace body inlet is arranged on the other side of the length direction of the quartz piece, and the quartz piece and the furnace body form a closed chamber.

[0020] In some embodiments, the tubular furnace system further includes a flow equalizer and / or a flow guide, wherein the flow equalizer can be detachably disposed in the quartz component to equalize the flow of the plasma etching gas; and the flow guide can be detachably disposed in the quartz component to guide the plasma etching gas.

[0021] The quartz parts processing method of the embodiment of the present invention uses plasma etching gas to bombard the deposition area of ​​the quartz parts to be processed, so that the deposition layer deposited on the passivation layer reacts with the plasma etching gas to generate silicon-containing gas, and the deposition layer deposited on the passivation layer can be removed. When the quartz parts are put into production after treatment, on the one hand, the uniformity of the thermal conductivity of the quartz parts can be improved, thereby improving the stability of the process implemented using the quartz parts; on the other hand, the internal stress of the quartz parts can be reduced, the risk of quartz parts breaking can be reduced, and the service life of the quartz parts can be extended. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 The figure is a flow chart of a quartz piece processing method according to an embodiment of the present invention.

[0023] Figure 2 It is a schematic structural diagram of a quartz piece to be processed according to an embodiment of the present invention.

[0024] Figure 3 It is a schematic structural diagram of a tubular furnace system according to an embodiment of the present invention.

[0025] Figure 4 It is a structural schematic diagram of a tubular furnace system according to another embodiment of the present invention.

[0026] Reference numerals:

[0027] 100. Tube furnace system;

[0028] 1. furnace body; 11. furnace chamber; 12. second furnace body inlet; 13. furnace body outlet;

[0029] 2. Quartz piece; 21. Quartz piece body; 22. Passivation layer; 23. Deposition layer; 201. Quartz piece inlet; 202. Quartz piece outlet;

[0030] 3. Plasma generator;

[0031] 4. Vacuum equipment;

[0032] 5. Flow equalizer;

[0033] 6. Flow guide;

[0034] 71. First pipeline; 72. Second pipeline; 73. Third pipeline; 74. Fourth pipeline. DETAILED DESCRIPTION

[0035] Embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and intended to be used to explain the present invention, but should not be understood as limiting the present invention.

[0036] like Figure 1 and Figure 2 As shown, the quartz piece processing method according to the embodiment of the present invention comprises the following steps:

[0037] Step S1, providing a quartz piece to be processed, wherein a deposition area of ​​the quartz piece to be processed is coated with a passivation layer, and a deposition layer is deposited on the passivation layer;

[0038] Step S2, using plasma etching gas to bombard the deposition layer on the deposition area of ​​the quartz piece to be processed, the deposition layer reacts with the plasma etching gas to generate silicon-containing gas, and the processed quartz piece is obtained.

[0039] It should be noted that the deposition area is the portion of the quartz piece that is exposed to the reaction gas when participating in the process reaction, and may be the inner wall of the quartz tube or the surface of the quartz boat.

[0040] Among them, Figure 2 As shown, the quartz part to be processed includes a quartz part body 21, a passivation layer 22 coated on the deposition area of ​​the quartz part body 21, and a deposition layer 23 deposited on the passivation layer 22. The deposition layer 23 is mainly composed of polycrystalline silicon. The quartz part to be processed can be understood as: a quartz part 2 with a deposition layer 23 deposited on the passivation layer 22; the processed quartz part can be understood as: a quartz part 2 without a deposition layer 23 deposited on the passivation layer 22, or a quartz part 2 after the deposition layer 23 is removed. The deposition layer 23 will affect the stability and service life of the process (such as LPCVD process) of the quartz part to be processed after it is put into production.

[0041] The quartz part processing method of the embodiment of the present invention uses plasma etching gas to bombard the deposition area of ​​the quartz part to be processed, so that the deposition layer 23 deposited on the passivation layer 22 reacts with the plasma etching gas to generate a silicon-containing gas, and the deposition layer 23 deposited on the passivation layer 22 can be removed. When the quartz part 2 is put into production and use after treatment, on the one hand, the uniformity of the thermal conductivity of the quartz part 2 can be improved, thereby improving the stability of the process implemented using the quartz part 2; on the other hand, the internal stress of the quartz part 2 can be reduced, the risk of the quartz part 2 being broken can be reduced, and the service life of the quartz part 2 can be extended. Among them, after the quartz part 2 is put into production and use, when a certain thickness of the deposition layer 23 is deposited on the passivation layer 22 again, the deposition layer 23 on the deposition area of ​​the quartz part to be processed is bombarded with plasma etching gas again to remove the deposition layer 23 on the passivation layer 22.

[0042] In addition, when the plasma etching gas is used to bombard the deposition area of ​​the quartz piece to be processed, if the plasma etching gas directly contacts the quartz piece body 21, it will react with the quartz piece body 21 and etch the quartz piece body 21, that is, damage the quartz piece 2. The deposition area of ​​the quartz piece to be processed in the embodiment of the present invention is coated with a passivation layer 22, so that when the plasma etching gas is used to bombard the deposition layer 23 on the deposition area of ​​the quartz piece to be processed, the passivation layer 22 can be used to separate the quartz piece body 21 from the plasma etching gas, so as to prevent the plasma etching gas from contacting with the quartz piece body 21 and etching the quartz piece body 21, thereby protecting the quartz piece 2.

[0043] Optionally, the material of the passivation layer includes an organic material or an inorganic material, the inorganic material includes Al2O3, and the organic material includes polytetrafluoroethylene and polyimide.

[0044] The passivation layer 22 is set to Al2O3. On the one hand, Al2O3 will not react with the plasma etching gas and can more effectively protect the quartz parts to be processed; on the other hand, the material cost and preparation cost of Al2O3 are relatively low, which is conducive to reducing the cost of the quartz parts to be processed.

[0045] Optionally, the plasma etching gas is a plasma generated by ionizing an etching gas, wherein the etching gas includes one or more of NF3, CF4, CHF3, SF6, and C2F6.

[0046] For example, the plasma etching gas is a plasma generated by ionizing NF3, wherein the plasma generated by ionizing NF3 includes NF3, NF2 + NF ++ and F - The plasma etching gas reacts with the deposited layer 23 to generate a gas including SiF 4 .

[0047] The plasma generated after ionization of NF3, CF4, CHF3, SF6, and C2F6 has a strong etching function, which is beneficial to improving the removal efficiency of the deposited layer 23, thereby improving the processing efficiency of the quartz part 2 and improving the utilization rate of the quartz part 2.

[0048] In some embodiments, when the time for which the processed quartz piece is put into production is greater than or equal to a preset time, a quartz piece to be processed is obtained, and the deposition layer 23 on the deposition area of ​​the quartz piece to be processed is bombarded with plasma etching gas.

[0049] When the time for the processed quartz part to be put into production is greater than or equal to the preset time, a quartz part to be processed is obtained. The deposition layer 23 on the deposition area of ​​the quartz part to be processed is bombarded with plasma etching gas. By reasonably setting the preset time, the number of times the quartz part 2 is processed can be minimized while taking into account the stability of the process and the service life of the quartz part 2, thereby improving the utilization rate of the quartz part 2.

[0050] In some embodiments, bombarding the deposition layer 23 on the deposition area of ​​the quartz piece to be processed with plasma etching gas includes:

[0051] The quartz piece to be processed cooperates with other parts to form a closed chamber; or, the quartz piece to be processed is placed in a closed chamber surrounded by other parts;

[0052] Plasma etching gas is introduced into the closed chamber through the gas inlet of the closed chamber to bombard the deposition layer 23 on the deposition area of ​​the quartz piece to be processed with the plasma etching gas; at the same time, the silicon-containing gas is discharged through the exhaust port of the closed chamber.

[0053] By enclosing a closed chamber, the deposition layer 23 can be located in the closed chamber. By passing plasma etching gas into the closed chamber, the contact probability between the plasma etching gas and the deposition layer 23 can be increased, thereby improving the utilization rate of the plasma etching gas, which is beneficial to reducing the processing cost of the quartz part 2.

[0054] Optionally, bombarding the deposition layer 23 on the deposition area of ​​the quartz piece to be processed with plasma etching gas includes:

[0055] The closed chamber is evacuated through the exhaust port of the closed chamber to extract the silicon-containing gas through the exhaust port of the closed chamber.

[0056] By extracting the silicon-containing gas in the closed chamber, on the one hand, it is helpful to increase the outflow rate of the silicon-containing gas, thereby further improving the processing efficiency of the quartz piece 2 and improving the utilization rate of the quartz piece 2; on the other hand, it is convenient to completely discharge the silicon-containing gas in the closed chamber and reduce the impact of the silicon-containing gas on subsequent processes.

[0057] Optionally, bombarding the deposition layer 23 on the deposition area of ​​the quartz piece to be processed with plasma etching gas includes:

[0058] The closed chamber is heated so that the temperature inside the closed chamber is 150° C. to 500° C.

[0059] By setting the temperature in the closed chamber to 150° C. to 500° C., the chemical reaction rate between the plasma etching gas and the deposition layer 23 is increased, thereby further improving the processing efficiency of the quartz piece 2 and improving the utilization rate of the quartz piece 2 .

[0060] Optionally, step S32 further includes: performing a vacuum operation on the closed chamber so that the pressure in the closed chamber is 1 torr to 3 torr, where 1 torr≈133.322 Pa.

[0061] By setting the pressure in the pressure-sealed chamber to 1 torr to 3 torr, the contact probability between the plasma etching gas and the deposition layer 23 is increased, the utilization rate of the plasma etching gas is further increased, and the processing cost of the quartz member 2 is reduced.

[0062] Optionally, step S32 further includes: uniformly flowing the plasma etching gas in the closed chamber so that the plasma etching gas is evenly distributed in the closed chamber.

[0063] By evenly distributing the plasma etching gas in the closed chamber, the deposition layer 23 on the deposition area of ​​the quartz piece to be processed can be fully contacted with the plasma etching gas, so that the deposition layer 23 at various locations on the deposition area of ​​the quartz piece to be processed can be effectively removed, thereby improving the processing effect of the quartz piece 2.

[0064] Optionally, step S32 further includes: guiding the plasma etching gas in the closed chamber so that the plasma etching gas flows through the deposition area of ​​the quartz piece to be processed.

[0065] By allowing the plasma etching gas to flow through the deposition area of ​​the quartz piece to be processed, the contact probability between the plasma etching gas and the deposition layer 23 can be increased, thereby further improving the utilization rate of the plasma etching gas and reducing the processing cost of the quartz piece 2 .

[0066] Optionally, the quartz member 2 may be a quartz boat, quartz slurry or a quartz tube.

[0067] like Figure 3 and Figure 4 As shown, the tubular furnace system 100 of the embodiment of the present invention comprises a furnace body 1, a quartz member 2 and a plasma generator 3. The furnace body 1 has a furnace chamber 11, a first furnace body inlet, a second furnace body inlet 12 and a furnace body outlet 13. The first furnace body inlet, the second furnace body inlet 12 and the furnace body outlet 13 are all connected to the furnace chamber 11, and the first furnace body inlet is for process gas to enter. The quartz member 2 is arranged in the furnace chamber 11, and the deposition area of ​​the quartz member 2 is coated with a passivation layer 22. The inlet of the plasma generator 3 is for etching gas to enter, and the outlet of the plasma generator 3 is connected to the second furnace body inlet 12, so as to bombard the deposition area of ​​the quartz member 2 with plasma etching gas.

[0068] The tubular furnace system 100 of the embodiment of the present invention, when it is necessary to use the quartz part 2 to implement a process, can pass the process gas into the furnace chamber 11 through the first furnace body inlet, and discharge the generated waste gas through the furnace body outlet 13. For example, when it is necessary to use the quartz part 2 to implement an LPCVD process, silane can be passed into the furnace chamber 11 through the first furnace body inlet, and the generated waste gas can be discharged through the furnace body outlet 13. After the quartz part 2 has been used for a period of time, when the deposition layer 23 on the deposition area of ​​the quartz part 2 is thick and needs to be processed, that is, when the quartz part 2 is a quartz part to be processed, an etching gas can be passed into the plasma generator 3 through the inlet of the plasma generator 3, and the etching gas is ionized into a plasma etching gas after passing through the plasma generator 3; then, the plasma etching gas enters the furnace chamber 11 through the second furnace body inlet 12, and bombards the deposition area of ​​the quartz part to be processed in the furnace chamber 11, and removes the deposition layer 23 on the deposition area of ​​the quartz part to be processed.

[0069] By providing a plasma generator 3 connected to the furnace body 1, the deposition area of ​​the quartz piece 2 is bombarded with plasma etching gas to remove the deposition layer 23 on the deposition area of ​​the quartz piece 2. On the one hand, the uniformity of the thermal conductivity of the quartz piece 2 can be improved, thereby improving the stability of the process implemented using the quartz piece 2; on the other hand, the internal stress of the quartz piece 2 can be reduced, the risk of the quartz piece 2 being broken can be reduced, and the service life of the quartz piece 2 can be extended.

[0070] In addition, in the related art, when the thickness of the deposition layer on the quartz part is large, the quartz part needs to be replaced. When replacing the quartz part, the steps of disassembly, installation, debugging, verification, etc. must be performed in sequence, which takes more than 12 hours. During this process, the tube furnace system 100 cannot be used for production, which reduces the utilization rate of the tube furnace system 100. The tube furnace system 100 of the embodiment of the present invention, by providing a plasma generator 3 connected to the furnace body 1, uses plasma etching gas to bombard the deposition area of ​​the quartz part 2 to remove the deposition layer 23 in the deposition area of ​​the quartz part 2. The time for removing the deposition layer 23 by bombarding the deposition area of ​​the quartz part 2 with plasma etching gas is much less than the time for replacing the quartz part 2. Thereby, the utilization rate of the tube furnace system 100 can be improved.

[0071] Optionally, the etching gas includes one or more of NF3, CF4, CHF3, SF6 and C2F6.

[0072] For example, Figure 3 and Figure 4 As shown, the etching gas is NF3, and the gases generated after NF3 passes through the plasma generator 3 include NF3, NF2 + NF ++ and F - The plasma etching gas reacts with the deposited layer 23 to generate a gas including SiF 4 .

[0073] Alternatively, if Figure 3 and Figure 4 As shown, the tube furnace system 100 includes a first pipeline 71 and a second pipeline 72. One end of the first pipeline 71 is for the etching gas to enter, and the other end of the first pipeline 71 is connected to the inlet of the plasma generator 3. The two ends of the second pipeline 72 are respectively connected to the outlet of the plasma generator 3 and the second furnace body inlet 12.

[0074] Alternatively, if Figure 3 and Figure 4 As shown, the quartz member 2 is a quartz tube with openings at both ends, the tube wall of the quartz member 2 is in contact with the side wall of the furnace body 1, the first furnace body inlet and the second furnace body inlet 12 are arranged on one side of the length direction of the quartz member 2, and the second furnace body inlet 12 is arranged on the other side of the length direction of the quartz member 2, and the quartz member 2 and the furnace body 1 form a closed chamber. Among them, the second furnace body inlet 12 is equivalent to the inlet of the closed chamber, and the furnace body outlet 13 is equivalent to the outlet of the closed chamber.

[0075] For example, Figure 3 and Figure 4 As shown, the quartz member 2 has two openings at both ends, namely, the quartz member inlet 201 and the quartz member outlet 202. The quartz member inlet 201 is arranged close to the first furnace body inlet and the second furnace body inlet 12, so that the quartz member inlet 201 is connected with the first furnace body inlet and the second furnace body inlet 12 through the furnace chamber 11. The quartz member outlet 202 is arranged close to the furnace body outlet 13, so that the quartz member outlet 202 is connected with the furnace body outlet 13 through the furnace chamber 11. The quartz member 2 and the furnace body 1 together form a closed chamber, and the inner wall of the quartz member 2 forms the inner wall of the closed chamber. The inner wall of the quartz member 2 will be exposed to the reaction gas when participating in the process reaction, and the inner wall of the quartz member 2 forms a deposition area. When used specifically, a deposition layer 23 will be generated on the inner wall of the quartz member 2, and the deposition layer 23 on the inner wall of the quartz member 2 needs to be processed.

[0076] The structure of the furnace body 1 of the tubular furnace system 100 is the same as the structure of the furnace body 1 in the related art. It only needs to install a plasma generator 3 on the furnace body 1 to remove the deposition layer 23 on the inner wall of the quartz tube without disassembling the quartz tube. While improving the utilization rate of the tubular furnace system 100, the cost is relatively low.

[0077] In some embodiments, the tube furnace system 100 further includes a vacuum pump 4, which is connected to the furnace body outlet 13 to perform a vacuum operation on the furnace chamber 11. The vacuum pump 4 may be a vacuum pump.

[0078] For example, Figure 3 and Figure 4As shown, the tubular furnace system 100 includes a third pipeline 73 and a fourth pipeline 74, the two ends of the third pipeline 73 are respectively connected to the furnace body outlet 13 and the inlet of the vacuum pumping device 4, one end of the fourth pipeline 74 is connected to the outlet of the vacuum pumping device 4, and the other end of the fourth pipeline 74 is for the silicon-containing gas to flow out.

[0079] By setting up the vacuum pumping device 4, on the one hand, the silicon-containing gas in the closed chamber can be extracted to improve the processing efficiency of the quartz part 2; on the other hand, a vacuum environment can be formed in the closed chamber to improve the utilization rate of the plasma etching gas and reduce the processing cost of the quartz part 2.

[0080] Optionally, the tube furnace system 100 further includes a flow equalizer 5, which is detachably disposed in the quartz member 2 to equalize the plasma etching gas. The flow equalizer 5 may be a flow equalizer plate having a plurality of vents.

[0081] By providing the flow equalizer 5 , the inner wall of the quartz piece 2 can be fully in contact with the plasma etching gas, so that the deposition layer 23 at various locations on the inner wall of the quartz piece 2 can be effectively removed, thereby improving the processing effect of the quartz piece 2 .

[0082] Optionally, there are two flow equalizers 5 , one of which is disposed close to the second furnace inlet 12 , and the other flow equalizer 5 is disposed close to the furnace outlet 13 .

[0083] The flow equalizer 5 disposed near the second furnace body inlet 12 can allow the plasma etching gas to enter the furnace chamber 11 evenly, and the flow equalizer 5 disposed near the furnace body outlet 13 can allow the silicon-containing gas generated in the furnace chamber 11 to flow out of the furnace chamber 11 evenly.

[0084] Alternatively, if Figure 4 As shown, the tube furnace system 100 further includes a flow guide 6 , which is detachably disposed in the quartz member 2 to guide the plasma housing gas.

[0085] For example, Figure 4 As shown, the guide member 6 is a columnar member, and a gap is formed between the guide member 6 and the side wall of the furnace chamber 11. When the plasma etching gas flows through the guide member 6, it can better contact and react with the deposition layer 23 on the inner wall of the quartz member 2 through the gap between the guide member 6 and the side wall of the furnace chamber 11, which is beneficial to further improve the processing efficiency of the quartz member 2.

[0086] In the quartz part processing method and the tube furnace system 100 of the embodiment of the present invention, when the thickness of the deposition layer 23 deposited on the deposition area of ​​the quartz part 2 reaches a certain level and needs to be processed, the deposition area of ​​the quartz part 2 is bombarded with plasma etching gas and chemically reacts with the deposition layer 23 in the deposition area of ​​the quartz part 2 to generate silicon-containing gas, and the silicon-containing gas is discharged. There is no need to disassemble the quartz part 2, which greatly facilitates the maintenance of the quartz part 2, extends the life of the quartz part 2, and improves the utilization rate of the tube furnace system 100. In order to prevent the plasma etching gas from reacting with the quartz part 2 itself and etching the quartz part, a layer of Al2O3 is first plated on the deposition area of ​​the quartz part 2 to protect the quartz part 2.

[0087] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are illustrative and are not to be construed as limitations on the present invention. Changes, modifications, substitutions and variations of the above embodiments by those of ordinary skill in the art are all within the scope of protection of the present invention.

Claims

1. A quartz piece processing method, characterized in that: The following steps are involved: Providing a quartz piece to be processed, wherein a deposition area of ​​the quartz piece to be processed is coated with a passivation layer, and a deposition layer is deposited on the passivation layer; The deposition layer on the deposition area of ​​the quartz piece to be processed is bombarded with plasma etching gas, and the deposition layer reacts with the plasma etching gas to generate silicon-containing gas, thereby obtaining a processed quartz piece.

2. The quartz piece processing method according to claim 1, characterized in that: Bombarding the deposition layer on the deposition area of ​​the quartz piece to be processed with plasma etching gas includes: the quartz piece to be processed cooperates with other components to form a closed chamber; or, the quartz piece to be processed is placed in a closed chamber surrounded by other components; Plasma etching gas is passed into the closed chamber through the gas inlet of the closed chamber to bombard the deposition layer on the deposition area of ​​the quartz piece to be processed with the plasma etching gas; the silicon-containing gas is discharged through the exhaust port of the closed chamber.

3. The quartz piece processing method according to claim 2, characterized in that: The closed chamber is evacuated through the exhaust port of the closed chamber to extract the silicon-containing gas through the exhaust port of the closed chamber.

4. The quartz piece processing method according to claim 2, characterized in that: Bombarding the deposition layer on the deposition area of ​​the quartz piece to be processed with plasma etching gas includes: Heating the closed chamber so that the temperature in the closed chamber is 150° C. to 500° C.; and / or The closed chamber is evacuated to a vacuum state so that the pressure in the closed chamber is 1 torr to 3 torr.

5. The quartz piece processing method according to claim 2, characterized in that: Bombarding the deposition layer on the deposition area of ​​the quartz piece to be processed with plasma etching gas includes: The plasma etching gas in the closed chamber is uniformly flowed so that the plasma etching gas is evenly distributed in the closed chamber.

6. The quartz piece processing method according to claim 2, characterized in that: Bombarding the deposition layer on the deposition area of ​​the quartz piece to be processed with plasma etching gas includes: The plasma etching gas in the closed chamber is guided so that the plasma etching gas flows through the deposition area of ​​the quartz piece to be processed.

7. The quartz piece processing method according to any one of claims 1 to 6, characterized in that: The passivation layer is Al2O3; and / or The plasma etching gas is plasma generated by ionizing an etching gas, and the etching gas includes one or more of NF3, CF4, CHF3, SF6 and C2F6.

8. A tubular furnace system, characterized in that: The quartz piece processing method according to any one of claims 1 to 7 can be implemented, wherein the tube furnace system comprises: A furnace body, wherein the furnace body comprises a furnace cavity, a first furnace body inlet, a second furnace body inlet and a furnace body outlet, wherein the first furnace body inlet, the second furnace body inlet and the furnace body outlet are all connected to the furnace cavity, and the first furnace body inlet is for process gas to enter; A quartz piece, the quartz piece is arranged in the furnace chamber, and a deposition area of ​​the quartz piece is coated with a passivation layer; A plasma generator, wherein the inlet of the plasma generator is for the etching gas to enter, and the outlet of the plasma generator is communicated with the inlet of the second furnace body so as to bombard the deposited layer on the passivation layer with the plasma etching gas.

9. The tube furnace system according to claim 8, characterized in that: The quartz piece is a quartz tube with openings at both ends, the tube wall of the quartz piece is in contact with the side wall of the furnace body, the first furnace body inlet and the second furnace body inlet are arranged on one side of the length direction of the quartz piece, and the second furnace body inlet is arranged on the other side of the length direction of the quartz piece, and the quartz piece and the furnace body form a closed chamber.

10. The tube furnace system according to claim 9, characterized in that: The tube furnace system also includes: A flow equalizer, which is detachably disposed in the quartz member to equalize the flow of the plasma etching gas; and / or A flow guide member is detachably disposed in the quartz member to guide the plasma etching gas.

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