Construction method and device of Schottky diode model and parameter extraction method of Schottky diode model

Abstract

The invention provides a construction method, device and equipment of a Schottky diode model and a parameter extraction method of the Schottky diode model. The construction method comprises the steps of obtaining modeling parameters of a Schottky diode; constructing a volt-ampere characteristic sub-model of the Schottky diode according to the voltage, the area, the temperature, the charge quantity and the saturation current; constructing a charge function sub-model of the Schottky diode according to the voltage, the capacitance and the potential; and according to the volt-ampere characteristic sub-model and the charge function sub-model, constructing a Schottky diode model with fitting Schottky diode capacitance climbing characteristics. According to the construction method, a Schottky diode model with complete volt-ampere characteristics and charge characteristics is constructed, and compared with a traditional diode model, the Schottky diode model has the advantage of fitting the complex capacitance climbing characteristics of a Schottky diode; the constructed Schottky diode model can fit the characteristics of the capacitor forward bias second climbing through the charge function sub-model.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and in particular relates to a method, device, equipment and parameter extraction method for a Schottky diode model. Background Art

[0002] In the field of microwave radio frequency, device models play a vital role in circuit design. A model that accurately characterizes the device is a powerful tool to reduce process iterations, reduce costs, and shorten the R&D cycle. For Schottky diodes, Schottky diodes are usually used with HEMT processes or pHEMT processes. Schottky diodes are mostly used in the circuit design of low-noise amplifiers and power amplifiers. They are one of the key devices in microwave radio frequency circuits. The most important thing about Schottky diodes in microwave radio frequency circuits is the volt-ampere characteristics and capacitance characteristics of Schottky diodes, so the precise modeling of Schottky diodes focuses on the volt-ampere characteristics and capacitance characteristics.

[0003] During the epitaxial layer growth process of the pHEMT process, when there is a difference in the band gap between the AlGaAs layer and the InGaAs layer, a two-dimensional electron gas (2-DEG) layer is generated, thereby generating a quantum well. The two-dimensional electron gas (2-DEG) layer has a high electron concentration in the high current region, so a higher current can be observed. Due to the existence of the two-dimensional electron gas (2-DEG) layer channel, the junction capacitance characteristics of the GaAs pHEMT Schottky diode will have an obvious climbing process. For the GaAs pHEMT Schottky diode, there will be two obvious capacitance climbing processes. At present, in the model characterization of the GaAs pHEMT Schottky diode, there is no accurate and feasible solution for the second capacitance climbing characteristics.

[0004] The existing Schottky diode capacitance climbing behavior is usually divided into three types. The first is to use pHEMT / HEMT triodes, short-circuit the drain and source to form a diode to characterize the capacitance model; the second is a lookup table model based on measured data; the third is to use an existing mature diode model, such as a PN junction diode model instead. Although the first method has higher accuracy, it has more complex model parameters, which increases the time for parameter extraction and simulation; the second method has the best accuracy, but is not suitable for large signal data simulation and requires more measurement data support; the third method has a more convenient parameter extraction process, but the model accuracy is limited. It can be seen that the existing constructed diode model cannot accurately characterize the complex capacitance climbing behavior of the Schottky diode. It can be understood that the existing diode modeling scheme cannot accurately characterize the capacitance (charge) characteristics of the Schottky diode; the existing Schottky diode modeling scheme has limitations, that is, the diode model does not have a wide voltage range of capacitance characteristics and the wide applicability of the model, such as the second climbing characteristics of the capacitance of the GaAs pHEMT Schottky diode under forward bias. Summary of the invention

[0005] An embodiment of the present application provides a method, device, equipment and parameter extraction method for constructing a Schottky diode model to solve the problem of difficulty in fitting the secondary rise of the junction capacitance of the existing Schottky diode.

[0006] In a first aspect, an embodiment of the present application provides a method for constructing a Schottky diode model, comprising the following steps:

[0007] Obtaining modeling parameters of a Schottky diode, wherein the modeling parameters include voltage, area, temperature, charge, saturation current, capacitance, and potential;

[0008] Constructing a volt-ampere characteristic sub-model of a Schottky diode according to the voltage, the area, the temperature, the charge amount and the saturation current;

[0009] Constructing a charge function sub-model of the Schottky diode according to the voltage, the capacitance and the potential;

[0010] A Schottky diode model having a matching Schottky diode capacitance climbing characteristic is constructed according to the volt-ampere characteristic sub-model and the charge function sub-model.

[0011] Optionally, the volt-ampere characteristic sub-model is represented by a non-ideal diode behavior function of a potential barrier effect, and the non-ideal diode behavior function is:

[0012]

[0013] Where V is the voltage across the diode in the Schottky diode, A is the area across the diode in the Schottky diode, and R * is the Richardson constant, T is the thermodynamic temperature, q is the charge, is the barrier thickness of the Schottky diode, k is the Boltzmann constant, n is the current ideal factor, I d is the actual current of the Schottky diode.

[0014] Optionally, the volt-ampere characteristic sub-model includes a barrier effect thickness function, and the barrier effect thickness function is:

[0015]

[0016] In the formula, I s is the saturation current.

[0017] Optionally, the expression of the charge function sub-model is:

[0018] C=Cj0+Cjr+Cjf

[0019] Cjr=Cj1[1+tanh(A10+A11·V)][1+tanh(A12+A13·V)]

[0020] Cjf=Cj2[1+tanh(A20+A21·V)][1+tanh(A22+A23·V)

[0021]

[0022] In the formula, Cj0, Cj1, and Cj2 are all capacitance parameters.

[0023] A10, A11, A12, A13, A20, A21, A22, and A23 are all polynomial coefficients. V is the voltage across the Schottky diode. Cj is the zero-bias junction capacitance of the Schottky diode. V j is the built-in potential, M is the junction capacitance smoothing factor, Fc is the forward bias loss coefficient, Q is the charge of the Schottky diode, and C is the capacitance of the Schottky diode.

[0024] In a second aspect, an embodiment of the present application provides a method for extracting parameters of a Schottky diode model, comprising the following steps:

[0025] Obtaining a current-voltage curve graph of a Schottky diode according to the volt-ampere characteristic sub-model of the Schottky diode model construction method described above;

[0026] Extracting a current-voltage curve in a linear region under forward bias conditions from the current-voltage curve graph;

[0027] The saturation current and the current ideality factor of the Schottky diode are obtained from the current-voltage curve.

[0028] Optionally, the parameter extraction method of the Schottky diode model includes: extracting the saturation resistance of the Schottky diode from a high current region of the current-voltage curve.

[0029] In a third aspect, an embodiment of the present application provides a device for constructing a Schottky diode model, including a parameter acquisition module, a first model construction module, a second model construction module, and a third model construction module;

[0030] The parameter acquisition module is used to acquire the modeling parameters of the Schottky diode, wherein the modeling parameters include voltage, area, temperature, charge, saturation current, capacitance and potential;

[0031] The first model building module is used to build a volt-ampere characteristic sub-model of the Schottky diode according to the voltage, the area, the temperature, the charge amount and the saturation current;

[0032] The second model building module is used to build a charge function sub-model of the Schottky diode according to the voltage, the capacitance and the potential;

[0033] The third model building module is used to build a Schottky diode model with a fitted Schottky diode capacitance climbing characteristic according to the volt-ampere characteristic sub-model and the charge function sub-model.

[0034] Optionally, the volt-ampere characteristic sub-model is represented by a non-ideal diode behavior function of a potential barrier effect, and the non-ideal diode behavior function is:

[0035]

[0036] Where V is the voltage across the diode in the Schottky diode, A is the area across the diode in the Schottky diode, and R * is the Richardson constant, T is the thermodynamic temperature, q is the charge, is the barrier thickness of the Schottky diode, k is the Boltzmann constant, n is the current ideal factor, I d is the actual current of the Schottky diode, I s is the saturation current.

[0037] Optionally, the expression of the charge function sub-model is:

[0038] C=Cj0+Cjr+Cjf

[0039] Cjr=Cj1[1+tanh(A10+A11·V)][1+tanh(A12+A13·V)]

[0040] Cjf=Cj2[1+tanh(A20+A21·V)][1+tanh(A22+A23·V)

[0041]

[0042] Where Cj0, Cj1, and Cj2 are capacitance parameters, a10, a11, A12, A13, A20, A21, A22, and A23 are polynomial coefficients, V is the voltage across the Schottky diode, Cj is the zero-bias junction capacitance of the Schottky diode, and V j is the built-in potential, M is the junction capacitance smoothing factor, Fc is the forward bias loss coefficient, Q is the charge of the Schottky diode, and C is the capacitance of the Schottky diode.

[0043] In a fourth aspect, an embodiment of the present application provides a device for constructing a Schottky diode model, including a processor and a memory;

[0044] The memory is used to store program codes and transmit the program codes to the processor;

[0045] The processor is used to execute the above-mentioned method for constructing the Schottky diode model according to the instructions in the program code.

[0046] An embodiment of the present application provides a method, device, equipment and parameter extraction method for constructing a Schottky diode model. The method for constructing the Schottky diode model includes obtaining the modeling parameters of the Schottky diode, and the modeling parameters include voltage, area, temperature, charge, saturation current, capacitance and potential; constructing a Schottky diode volt-ampere characteristic sub-model according to voltage, area, temperature, charge and saturation current; constructing a Schottky diode charge function sub-model according to voltage, capacitance and potential; constructing a Schottky diode model with a capacitance climbing characteristic that fits the Schottky diode according to the volt-ampere characteristic sub-model and the charge function sub-model. The method for constructing the Schottky diode model constructs a Schottky diode model with complete volt-ampere characteristics and charge characteristics. Compared with the traditional diode model, the Schottky diode model has the advantage of fitting the complex capacitance climbing characteristics of the Schottky diode; the constructed Schottky diode model can fit the characteristics of the second climb of the GaAs pHEMT capacitor under forward bias through the charge function sub-model, so that the Schottky diode model has wide applicability and solves the problem of difficulty in fitting the secondary climb of the junction capacitance of the existing Schottky diode.

[0047] The construction device of the Schottky diode model cooperates with each other through a parameter acquisition module, a first model construction module, a second model construction module and a third model construction module to construct a Schottky diode model with complete volt-ampere characteristics and charge characteristics. Compared with the traditional diode model, the Schottky diode model has the advantage of fitting the complex capacitance climbing characteristics of the Schottky diode; the constructed Schottky diode model can fit the characteristics of the second climb of the GaAs pHEMT capacitor forward bias through the charge function sub-model, so that the Schottky diode model has wide applicability and solves the problem of difficulty in fitting the secondary climb of the existing Schottky diode junction capacitance. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] In order to more clearly illustrate the technical solution in an embodiment of the present application, the following is a brief introduction to the drawings required for the description of the embodiment. Obviously, the drawings described below are only some embodiments of the present application, and those skilled in the art can obtain other drawings based on these drawings without creative work.

[0049] In order to more completely understand the present application and its beneficial effects, the following description will be given in conjunction with the accompanying drawings. In the following description, the same reference numerals represent the same parts.

[0050] Figure 1 A flowchart of the steps of a method for constructing a Schottky diode model provided for one embodiment of the present application.

[0051] Figure 2 A comparison diagram of the charge function sub-model of the Schottky diode and the traditional charge model in the method for constructing the Schottky diode model provided in one embodiment of the present application.

[0052] Figure 3 A fitting diagram of the secondary rise of the forward biased capacitance of a GaAs pHEMT Schottky diode in a method for constructing a Schottky diode model provided in one embodiment of the present application.

[0053] Figure 4 A flowchart of the steps of a method for extracting parameters of a Schottky diode model provided in another embodiment of the present application.

[0054] Figure 5 A line graph of a current-voltage curve in a parameter extraction method for a Schottky diode model provided in another embodiment of the present application.

[0055] Figure 6 A framework diagram of a device for constructing a Schottky diode model provided in accordance with another embodiment of the present application. DETAILED DESCRIPTION

[0056] The following will be combined with the drawings in one embodiment of the present application to clearly and completely describe the technical solution in one embodiment of the present application. Obviously, the described embodiment is only a part of the embodiment of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of this application.

[0057] Patent terms:

[0058] GaAs refers to gallium arsenide.

[0059] An embodiment of the present application provides a method, device, equipment and parameter extraction method for constructing a Schottky diode model, which constructs a convenient and highly accurate Schottky diode model, the Schottky diode model includes a volt-ampere characteristic sub-model and a charge function sub-model, and the charge function sub-model is used to implement the fitting of the capacitance characteristic curve of the Schottky diode, and the constructed charge function sub-model covers a wide voltage range and the wide applicability of the model, so as to solve the problem of difficulty in fitting the secondary rise of the junction capacitance of the existing Schottky diode.

[0060] Embodiment 1:

[0061] An embodiment of the present application provides a method for constructing a Schottky diode model. For example, please refer to Figure 1 , Figure 1 A flowchart of the steps of a method for constructing a Schottky diode model provided for one embodiment of the present application.

[0062] like Figure 1 As shown, the present invention provides a method for constructing a Schottky diode model, comprising the following steps:

[0063] S100. Obtain modeling parameters of the Schottky diode, where the modeling parameters include voltage, area, temperature, charge, saturation current, capacitance, and potential;

[0064] S200. Construct a volt-ampere characteristic sub-model of a Schottky diode according to voltage, area, temperature, charge and saturation current;

[0065] S300. Construct a charge function sub-model of a Schottky diode according to voltage, capacitance and potential;

[0066] S400. Construct a Schottky diode model with a fitted Schottky diode capacitance climbing characteristic according to the volt-ampere characteristic sub-model and the charge function sub-model.

[0067] It is further explained that in step S100, the modeling parameters of the Schottky diode are obtained to provide data for the subsequent steps S200 and S300 to construct sub-models. In step S200, the volt-ampere characteristic sub-model of the Schottky diode is constructed according to the voltage, area, temperature, charge amount and saturation current obtained in step S100. In step S300, the charge function sub-model of the Schottky diode is constructed according to the voltage, capacitance and potential obtained in step S100. In step S400, the Schottky diode model is constructed according to the volt-ampere characteristic sub-model constructed in step S200 and the charge function sub-model constructed in step S300.

[0068] It is further explained that the Schottky diode model constructed by the construction method of the Schottky diode model adopts a charge function sub-model to construct a continuous and conductive capacitor, thereby realizing the fitting of the Schottky diode capacitance characteristics; thus, the Schottky diode model has better convergence during the application process.

[0069] It is further explained that the method for constructing the Schottky diode model constructs a Schottky diode model with complete volt-ampere characteristics and charge characteristics. Compared with the traditional diode model, the Schottky diode model has the advantage of fitting the complex capacitance climbing characteristics of the Schottky diode. In this embodiment, the Schottky diode model can fit the characteristics of the second climb of the forward biased GaAs pHEMT capacitor, so that the Schottky diode model has wide applicability and high accuracy.

[0070] An embodiment of the present application provides a method for constructing a Schottky diode model, including obtaining modeling parameters of a Schottky diode, the modeling parameters including voltage, area, temperature, charge, saturation current, capacitance and potential; constructing a Schottky diode volt-ampere characteristic sub-model according to voltage, area, temperature, charge and saturation current; constructing a Schottky diode charge function sub-model according to voltage, capacitance and potential; constructing a Schottky diode model with a capacitance climbing characteristic that fits the Schottky diode according to the volt-ampere characteristic sub-model and the charge function sub-model. The method for constructing the Schottky diode model constructs a Schottky diode model with complete volt-ampere characteristics and charge characteristics. Compared with the traditional diode model, the Schottky diode model has the advantage of fitting the complex capacitance climbing characteristics of the Schottky diode; the constructed Schottky diode model can fit the characteristics of the second climb of the forward biased GaAs pHEMT capacitor through the charge function sub-model, so that the Schottky diode model has wide applicability and solves the problem of difficulty in fitting the secondary climb of the existing Schottky diode junction capacitance.

[0071] In the inventive embodiment of the application, the volt-ampere characteristic sub-model is represented by a non-ideal diode behavior function of the barrier effect, and the non-ideal diode behavior function is:

[0072]

[0073] Where V is the voltage across the diode in the Schottky diode, A is the area across the diode in the Schottky diode, and R * is the Richardson constant, T is the thermodynamic temperature, q is the charge, is the barrier thickness of the Schottky diode, k is the Boltzmann constant, n is the current ideal factor, I d is the actual current of the Schottky diode, I s is the saturation current.

[0074] It is further explained that the traditional diode current formula is composed of a current source formed by the Schottky formula and a resistor in series, which is also the commonly used diode current formula. The specific expression is as follows:

[0075]

[0076] Wherein, I(V) is the diode current, and Ns is the current factor. In this embodiment, the volt-ampere characteristic sub-model constructed by the construction method of the Schottky diode model is based on the non-ideal diode behavior function of the pHEMT Schottky diode, which is improved on the basis of the empirical formula. In fact, the current of the Schottky diode is formed by carriers, and a built-in electric field E is generated inside it. With the enhancement of the built-in electric field, the forward and reverse flowing electrons eventually reach a dynamic balance, and a non-ideal diode behavior function of the barrier effect is obtained.

[0077] In the inventive embodiment of the application, the expression of the charge function sub-model is:

[0078] C=Cj0+Cjr+Cjf

[0079] Cjr=Cj1[1+tanh(A10+A11·V)][1+tanh(A12+A13·V)]

[0080] Cjf=Cj2[1+tanh(A20+A21·V)][1+tanh(A22+A23·V)

[0081]

[0082] Where Cj0, Cj1, and Cj2 are capacitance parameters, A10, A11, A12, A13, A20, A21, A22, and A23 are polynomial coefficients, V is the voltage across the Schottky diode, Cj is the zero-bias junction capacitance of the Schottky diode, and V jis the built-in potential, M is the junction capacitance smoothing factor, Fc is the forward bias loss coefficient, Q is the charge of the Schottky diode, and C is the capacitance of the Schottky diode.

[0083] It is further explained that the method for constructing the Schottky diode model is to integrate the capacitance function of the traditional Schottky diode to obtain the expression of the charge function sub-model. The capacitance function is:

[0084] C=Cj0+Cjr+Cjf

[0085] Cjr=Cj1[1+tanh(A10+A11·V)][1+tanh(A12+A13·V)]

[0086] Cjf=Cj2[1+tanh(A20+A21·V)][1+tanh(A22+A23·V)

[0087] Wherein, C is the capacitance of the Schottky diode. In this embodiment, in view of the shortcoming that the traditional diode charge model is difficult to characterize the charge behavior of the Schottky diode based on the epitaxial process, the construction method of the Schottky diode model has a better characterization of the complex diode charge behavior by constructing a more flexible Schottky diode charge function sub-model, and can also accurately fit the secondary climb behavior of the GaAs pHEMT Schottky diode capacitance under forward bias.

[0088] Figure 2 A comparison diagram of the charge function sub-model of the Schottky diode and the traditional charge model in the method for constructing the Schottky diode model provided in one embodiment of the present application, Figure 3 A fitting diagram of the secondary rise of the forward biased capacitance of a GaAs pHEMT Schottky diode in a method for constructing a Schottky diode model provided in one embodiment of the present application.

[0089] like Figure 2 and Figure 3 As shown, in the embodiment of the invention of the application, due to the existence of the hyperbolic tangent function, the function in the charge function sub-model has high flexibility and continuity, and is high-order differentiable, which can more accurately fit various complex capacitance behaviors. Compared with the traditional charge model, the fitting of the capacitance climbing stage of the Schottky diode is more flexible.

[0090] Embodiment 2:

[0091] Figure 4 A flow chart of the steps of a parameter extraction method of a Schottky diode model provided in another embodiment of the present application, Figure 5 A line graph of a current-voltage curve in a parameter extraction method for a Schottky diode model provided in another embodiment of the present application.

[0092] like Figure 4 and Figure 5 As shown, the present invention also provides a parameter extraction method for a Schottky diode model, comprising the following steps:

[0093] S101. Obtaining a current-voltage curve of a Schottky diode according to the volt-ampere characteristic sub-model of the Schottky diode model construction method described above;

[0094] S102. Extracting a current-voltage curve in a linear region under forward bias conditions from the current-voltage curve graph;

[0095] S103. Obtain the saturation current and current ideality factor of the Schottky diode from the current-voltage curve.

[0096] It is further explained that the method for constructing the Schottky diode model includes obtaining the modeling parameters of the Schottky diode, the modeling parameters including voltage, area, temperature, charge, saturation current, capacitance and potential; constructing a volt-ampere characteristic sub-model of the Schottky diode based on the voltage, area, temperature, charge and saturation current; constructing a charge function sub-model of the Schottky diode based on the voltage, capacitance and potential; and constructing a Schottky diode model with a fitted Schottky diode capacitance climbing characteristic based on the volt-ampere characteristic sub-model and the charge function sub-model.

[0097] It is further explained that in step S100, the modeling parameters of the Schottky diode are obtained to provide data for the subsequent steps S200 and S300 to build a sub-model. In step S200, the voltage, area, temperature, charge and In the embodiment of the invention applied, the volt-ampere characteristic sub-model is represented by the non-ideal diode behavior function of the barrier effect, and the non-ideal diode behavior function is:

[0098]

[0099] Where V is the voltage across the diode in the Schottky diode, A is the area across the diode in the Schottky diode, and R * is the Richardson constant, T is the thermodynamic temperature, q is the charge, is the barrier thickness of the Schottky diode, k is the Boltzmann constant, n is the current ideal factor, I d is the actual current of the Schottky diode, I s is the saturation current.

[0100] It is further explained that the traditional diode current formula is composed of a current source formed by the Schottky formula and a resistor in series, which is also the commonly used diode current formula. The specific expression is as follows:.

[0101]

[0102] Wherein, I(V) is the diode current, and Ns is the current factor. In this embodiment, the volt-ampere characteristic sub-model constructed by the construction method of the Schottky diode model is based on the non-ideal diode behavior function of the pHEMT Schottky diode, which is improved on the basis of the empirical formula. In fact, the current of the Schottky diode is formed by carriers, and a built-in electric field E is generated inside it. With the enhancement of the built-in electric field, the forward and reverse flowing electrons eventually reach a dynamic balance, and a non-ideal diode behavior function of the barrier effect is obtained.

[0103] In the inventive embodiment of the application, the expression of the charge function sub-model is:

[0104] C=Cj0+Cjr+Cjf

[0105] Cjr=Cj1[1+tanh(A10+A11·V)][1+tanh(A12+A13·V)]

[0106] Cjf=Cj2[1+tanh(A20+A21·V)][1+tanh(A22+A23·V)

[0107]

[0108] Where Cj0, Cj1, and Cj2 are capacitance parameters, A10, A11, A12, A13, A20, A21, A22, and A23 are polynomial coefficients, V is the voltage across the Schottky diode, Cj is the zero-bias junction capacitance of the Schottky diode, and V j is the built-in potential, M is the junction capacitance smoothing factor, Fc is the forward bias loss coefficient, Q is the charge of the Schottky diode, and C is the capacitance of the Schottky diode.

[0109] It is further explained that the method for constructing the Schottky diode model is to integrate the capacitance function of the traditional Schottky diode to obtain the expression of the charge function sub-model. The capacitance function is:

[0110] C=Cj0+Cjr+Cjf

[0111] Cjr=Cj1[1+tanh(A10+A11·V)][1+tanh(A12+A13·V)]

[0112] Cjf=Cj2[1+tanh(A20+A21·V)][1+tanh(A22+A23·V)

[0113] Wherein, C is the capacitance of the Schottky diode. In this embodiment, in view of the shortcoming that the traditional diode charge model is difficult to characterize the charge behavior of the Schottky diode based on the epitaxial process, the construction method of the Schottky diode model has a better characterization of the complex diode charge behavior by constructing a more flexible Schottky diode charge function sub-model, and can also accurately fit the secondary climb behavior of the GaAs pHEMT Schottky diode capacitance under forward bias.

[0114] Constructing the volt-ampere characteristic sub-model of the Schottky diode. In step S300, constructing the charge function sub-model of the Schottky diode according to the voltage, capacitance and potential obtained in step S100. In step S400, constructing the Schottky diode model according to the volt-ampere characteristic sub-model constructed in step S200 and the charge function sub-model constructed in step S300.

[0115] It is further explained that the Schottky diode model constructed by the construction method of the Schottky diode model adopts a charge function sub-model to construct a continuous and conductive capacitor, thereby realizing the fitting of the Schottky diode capacitance characteristics; thus, the Schottky diode model has better convergence during the application process.

[0116] It is further explained that the method for constructing the Schottky diode model constructs a Schottky diode model with complete volt-ampere characteristics and charge characteristics. Compared with the traditional diode model, the Schottky diode model has the advantage of fitting the complex capacitance climbing characteristics of the Schottky diode. In this embodiment, the Schottky diode model can fit the characteristics of the second climb of the forward biased GaAs pHEMT capacitor, so that the Schottky diode model has wide applicability and high accuracy.

[0117] In the inventive embodiment of the application, the volt-ampere characteristic sub-model is represented by a non-ideal diode behavior function of the barrier effect, and the non-ideal diode behavior function is:

[0118]

[0119] Where V is the voltage across the diode in the Schottky diode, A is the area across the diode in the Schottky diode, and R * is the Richardson constant, T is the thermodynamic temperature, q is the charge, is the barrier thickness of the Schottky diode, k is the Boltzmann constant, n is the current ideal factor, I d is the actual current of the Schottky diode, I s is the saturation current.

[0120] It is further explained that the traditional diode current formula is composed of a current source formed by the Schottky formula and a resistor in series, which is also the commonly used diode current formula. The specific expression is as follows:.

[0121]

[0122] Wherein, I(V) is the diode current, and Ns is the current factor. In this embodiment, the volt-ampere characteristic sub-model constructed by the construction method of the Schottky diode model is based on the non-ideal diode behavior function of the pHEMT Schottky diode, which is improved on the basis of the empirical formula. In fact, the current of the Schottky diode is formed by carriers, and a built-in electric field E is generated inside it. With the enhancement of the built-in electric field, the forward and reverse flowing electrons eventually reach a dynamic balance, and a non-ideal diode behavior function of the barrier effect is obtained.

[0123] In the inventive embodiment of the application, the expression of the charge function sub-model is:

[0124] C=Cj0+Cjr+Cjf

[0125] Cjr=Cj1[1+tanh(A10+A11·V)][1+tanh(A12+A13·V)]

[0126] Cjf=Cj2[1+tanh(A20+A21·V)][1+tanh(A22+A23·V)

[0127]

[0128] Where Cj0, Cj1, and Cj2 are capacitance parameters, A10, A11, A12, A13, A20, A21, A22, and A23 are polynomial coefficients, V is the voltage across the Schottky diode, Cj is the zero-bias junction capacitance of the Schottky diode, and V j is the built-in potential, M is the junction capacitance smoothing factor, Fc is the forward bias loss coefficient, Q is the charge of the Schottky diode, and C is the capacitance of the Schottky diode.

[0129] It is further explained that the method for constructing the Schottky diode model is to integrate the capacitance function of the traditional Schottky diode to obtain the expression of the charge function sub-model. The capacitance function is:

[0130] C=Cj0+Cjr+Cjf

[0131] Cjr=Cj1[1+tanh(A10+A11·V)][1+tanh(A12+A13·V)]

[0132] Cjf=Cj2[1+tanh(A20+A21·V)][1+tanh(A22+A23·V)

[0133] Wherein, C is the capacitance of the Schottky diode. In this embodiment, in view of the shortcoming that the traditional diode charge model is difficult to characterize the charge behavior of the Schottky diode based on the epitaxial process, the construction method of the Schottky diode model has a better characterization of the complex diode charge behavior by constructing a more flexible Schottky diode charge function sub-model, and can also accurately fit the secondary climb behavior of the GaAs pHEMT Schottky diode capacitance under forward bias.

[0134] In the invention embodiment of the application, the parameter extraction method of the Schottky diode model includes: extracting the saturation resistance of the Schottky diode from the high current region of the current-voltage curve.

[0135] It is further explained that if Figure 5 As shown, in step S103, the saturation current I is obtained according to step S101 and step S102. In this embodiment, the parameter extraction method of the Schottky diode model extracts the parameter saturation current I by using the curve in the linear region of the current-voltage curve under the forward bias condition. s and the current ideal factor n, and then extract the saturation resistance parameter R in the high current region s , the DC parameters of Schottky diode can be obtained. Compared with the traditional empirical current formula, it has better physical meaning.

[0136] Embodiment three:

[0137] Figure 6 A framework diagram of a device for constructing a Schottky diode model provided in accordance with another embodiment of the present application.

[0138] like Figure 6 As shown, the present invention also provides a device for constructing a Schottky diode model, including: a parameter acquisition module 100, a first model construction module 200, a second model construction module 300 and a third model construction module 400;

[0139] The parameter acquisition module 100 is used to acquire the modeling parameters of the Schottky diode, and the modeling parameters include voltage, area, temperature, charge, saturation current, capacitance and potential;

[0140] A first model building module 200 is used to build a volt-ampere characteristic sub-model of a Schottky diode according to voltage, area, temperature, charge amount and saturation current;

[0141] A second model building module 300 is used to build a charge function sub-model of the Schottky diode according to voltage, capacitance and potential;

[0142] The third model building module 400 is used to build a Schottky diode model with a fitted Schottky diode capacitance climbing characteristic according to the volt-ampere characteristic sub-model and the charge function sub-model.

[0143] It is further explained that in the parameter acquisition module 100, the modeling parameters of the Schottky diode are obtained to provide data for the subsequent first model construction module 200 and the second model construction module 300 to construct a sub-model. In the first model construction module 200, the volt-ampere characteristic sub-model of the Schottky diode is constructed according to the voltage, area, temperature, charge amount and saturation current obtained by the parameter acquisition module 100. In the second model construction module 300, the charge function sub-model of the Schottky diode is constructed according to the voltage, capacitance and potential obtained by the parameter acquisition module 100. In the third model construction module 400, a Schottky diode model is constructed according to the volt-ampere characteristic sub-model constructed by the first model construction module 200 and the charge function sub-model constructed by the second model construction module 300.

[0144] It is further explained that the Schottky diode model constructed by the construction device of the Schottky diode model adopts a charge function sub-model to construct a continuous and conductive capacitor, thereby realizing the fitting of the Schottky diode capacitance characteristics; thus, the Schottky diode model has better convergence during the application process.

[0145] It is further explained that the construction device of the Schottky diode model constructs a Schottky diode model with complete volt-ampere characteristics and charge characteristics. Compared with the traditional diode model, the Schottky diode model has the advantage of fitting the complex capacitance climbing characteristics of the Schottky diode. In this embodiment, the Schottky diode model can fit the characteristics of the second climb of the GaAs pHEMT capacitor forward bias, so that the Schottky diode model has wide applicability and high accuracy.

[0146] In an embodiment of the present invention, the construction device of the Schottky diode model cooperates with the parameter acquisition module, the first model construction module, the second model construction module and the third model construction module to construct a Schottky diode model with complete volt-ampere characteristics and charge characteristics. Compared with the traditional diode model, the Schottky diode model has the advantage of fitting the complex capacitance climbing characteristics of the Schottky diode; the constructed Schottky diode model can fit the characteristics of the second climb of the forward biased GaAs pHEMT capacitor through the charge function sub-model, so that the Schottky diode model has wide applicability and solves the problem of difficulty in fitting the secondary climb of the existing Schottky diode junction capacitance.

[0147] In an embodiment of the present invention, the volt-ampere characteristic sub-model is represented by a non-ideal diode behavior function of a potential barrier effect, and the non-ideal diode behavior function is:

[0148]

[0149] Where V is the voltage across the diode in the Schottky diode, A is the area across the diode in the Schottky diode, and R * is the Richardson constant, T is the thermodynamic temperature, q is the charge, is the barrier thickness of the Schottky diode, k is the Boltzmann constant, n is the current ideal factor, I d is the actual current of the Schottky diode, I s is the saturation current.

[0150] It is further explained that the traditional diode current formula is composed of a current source formed by the Schottky formula and a resistor in series, which is also the commonly used diode current formula. The specific expression is as follows:.

[0151]

[0152] Wherein, I(V) is the diode current, and Ns is the current factor. In this embodiment, the volt-ampere characteristic sub-model constructed by the construction method of the Schottky diode model is based on the non-ideal diode behavior function of the pHEMT Schottky diode, which is improved on the basis of the empirical formula. In fact, the current of the Schottky diode is formed by carriers, and a built-in electric field E is generated inside it. With the enhancement of the built-in electric field, the forward and reverse flowing electrons eventually reach a dynamic balance, and a non-ideal diode behavior function of the barrier effect is obtained.

[0153] In an embodiment of the present invention, the expression of the charge function sub-model is:

[0154] C=Cj0+Cjr+Cjf

[0155] Cjr=Cj1[1+tanh(A10+A11·V)][1+tanh(A12+A13·V)]

[0156] Cjf=Cj2[1+tanh(A20+A21·V)][1+tanh(A22+A23·V)

[0157]

[0158] Where Cj0, Cj1, and Cj2 are capacitance parameters, A10, A11, A12, A13, A20, A21, A22, and A23 are polynomial coefficients, V is the voltage across the Schottky diode, Cj is the zero-bias junction capacitance of the Schottky diode, and V jis the built-in potential, M is the junction capacitance smoothing factor, Fc is the forward bias loss coefficient, Q is the charge of the Schottky diode, and C is the capacitance of the Schottky diode

[0159] It is further explained that the method for constructing the Schottky diode model is to integrate the capacitance function of the traditional Schottky diode to obtain the expression of the charge function sub-model. The capacitance function is:

[0160] C=Cj0+Cjr+Cjf

[0161] Cjr=Cj1[1+tanh(A10+A11·V)[1+tanh(A12+A13·V)]

[0162] Cjf=Cj2[1+tanh(A20+A21·V)][1+tanh(A22+A23·V)

[0163] Wherein, C is the capacitance of the Schottky diode. In this embodiment, in view of the shortcoming that the traditional diode charge model is difficult to characterize the charge behavior of the Schottky diode based on the epitaxial process, the construction method of the Schottky diode model has a better characterization of the complex diode charge behavior by constructing a more flexible Schottky diode charge function sub-model, and can also accurately fit the secondary climb behavior of the GaAs pHEMT Schottky diode capacitance under forward bias.

[0164] Embodiment 4:

[0165] The present invention also provides a device for constructing a Schottky diode model, including a processor and a memory;

[0166] A memory, used for storing program codes and transmitting the program codes to a processor;

[0167] The processor is used to execute the above-mentioned method for constructing the Schottky diode model according to the instructions in the program code.

[0168] In the embodiment of the present invention, the content of the method for constructing the Schottky diode model has been described in the first and second embodiments, and will not be repeated in this embodiment.

[0169] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0170] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more features.

[0171] The above is a detailed introduction to the method for constructing a Schottky diode model provided by an embodiment of the present application. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A method for constructing a Schottky diode model, characterized in that: The following steps are involved: Obtaining modeling parameters of a Schottky diode, wherein the modeling parameters include voltage, area, temperature, charge, saturation current, capacitance, and potential; Constructing a volt-ampere characteristic sub-model of a Schottky diode according to the voltage, the area, the temperature, the charge amount and the saturation current; Constructing a charge function sub-model of the Schottky diode according to the voltage, the capacitance and the potential; A Schottky diode model having a fitted Schottky diode capacitance climbing characteristic is constructed according to the volt-ampere characteristic sub-model and the charge function sub-model.

2. The method for constructing a Schottky diode model according to claim 1, characterized in that: The volt-ampere characteristic sub-model is represented by a non-ideal diode behavior function of a potential barrier effect, and the non-ideal diode behavior function is: Where V is the voltage across the diode in the Schottky diode, A is the area across the diode in the Schottky diode, and R * is the Richardson constant, T is the thermodynamic temperature, q is the charge, is the barrier thickness of the Schottky diode, k is the Boltzmann constant, n is the current ideal factor, I d is the actual current of the Schottky diode.

3. The method for constructing a Schottky diode model according to claim 2, characterized in that: The volt-ampere characteristic sub-model includes a barrier effect thickness function, and the barrier effect thickness function is: In the formula, I s is the saturation current.

4. The method for constructing a Schottky diode model according to claim 1, characterized in that: The expression of the charge function submodel is: C=Cj0+Cjr+Cjf Cjr=Cj1[1+tanh(A10+A11·V)][1+tanh(A12+A13·V)] Cjf=Cj2[1+tanh(A20+A21·V)][1+tanh(A22+A23·V) In the formula, Cj0, Cj1, and Cj2 are all capacitance parameters. A10, A11, A12, A13, A20, A21, A22, and A23 are all polynomial coefficients. V is the voltage across the Schottky diode. Cj is the zero-bias junction capacitance of the Schottky diode. V j is the built-in potential, M is the junction capacitance smoothing factor, Fc is the forward bias loss coefficient, Q is the charge of the Schottky diode, and C is the capacitance of the Schottky diode.

5. A method for extracting parameters of a Schottky diode model, characterized in that: The following steps are involved: Obtaining a current-voltage curve graph of a Schottky diode according to the volt-ampere characteristic sub-model of the method for constructing a Schottky diode model as claimed in any one of claims 1 to 4; Extracting a current-voltage curve in a linear region under forward bias conditions from the current-voltage curve graph; The saturation current and the current ideality factor of the Schottky diode are obtained from the current-voltage curve.

6. The parameter extraction method of the Schottky diode model according to claim 5, characterized in that: include: The saturation resistance of the Schottky diode is extracted from the high current region of the current-voltage graph.

7. A device for constructing a Schottky diode model, characterized in that: It includes a parameter acquisition module, a first model construction module, a second model construction module and a third model construction module; The parameter acquisition module is used to acquire the modeling parameters of the Schottky diode, wherein the modeling parameters include voltage, area, temperature, charge, saturation current, capacitance and potential; The first model building module is used to build a volt-ampere characteristic sub-model of the Schottky diode according to the voltage, the area, the temperature, the charge amount and the saturation current; The second model building module is used to build a charge function sub-model of the Schottky diode according to the voltage, the capacitance and the potential; The third model building module is used to build a Schottky diode model with a fitted Schottky diode capacitance climbing characteristic according to the volt-ampere characteristic sub-model and the charge function sub-model.

8. The device for constructing a Schottky diode model according to claim 7, characterized in that: The volt-ampere characteristic sub-model is represented by a non-ideal diode behavior function of a potential barrier effect, and the non-ideal diode behavior function is: Where V is the voltage across the diode in the Schottky diode, A is the area across the diode in the Schottky diode, and R * is the Richardson constant, T is the thermodynamic temperature, q is the charge, is the barrier thickness of the Schottky diode, k is the Boltzmann constant, n is the current ideal factor, I d is the actual current of the Schottky diode, I s is the saturation current.

9. The device for constructing a Schottky diode model according to claim 7, characterized in that: The expression of the charge function submodel is: C=Cj0+Cjr+Cjf Cjr=Cj1[1+tanh(A10+A11·V)][1+tanh(A12+A13·V)] Cjf=Cj2[1+tanh(A20+A21·V)][1+tanh(A22+A23·V) Where Cj0, Cj1, and Cj2 are capacitance parameters, A10, A11, A12, A13, A20, A21, A22, and A23 are polynomial coefficients, V is the voltage across the Schottky diode, Cj is the zero-bias junction capacitance of the Schottky diode, and V j is the built-in potential, M is the junction capacitance smoothing factor, Fc is the forward bias loss coefficient, Q is the charge of the Schottky diode, and C is the capacitance of the Schottky diode.

10. A device for constructing a Schottky diode model, characterized in that: including a processor and a memory; The memory is used to store program codes and transmit the program codes to the processor; The processor is used to execute the method for constructing a Schottky diode model according to any one of claims 1 to 4 according to the instructions in the program code.

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