Laser annealing apparatus, laser annealing method, and method for manufacturing semiconductor device

Abstract

The present invention addresses the problem of providing a laser annealing device, a laser annealing method, and a manufacturing method, whereby an annealing process can be stably performed. A laser annealing apparatus according to an embodiment of the present invention comprises: a laser light source that emits laser light; an annealing optical system that irradiates the semiconductor film with laser light; a probe light source that emits probe light; an optical system that irradiates the semiconductor film irradiated with the laser light with probe light; a light detector that detects transmission light of the probe light that has passed through the substrate or reflected light of the probe light that has been reflected by the substrate; a transport path for transporting the substrate to change an irradiation position with respect to the substrate; and a processing unit that sets a process condition for laser annealing on the basis of a detection result of the photodetector when the substrate is transported.

Description

Technical Field

[0001] The present disclosure relates to a laser annealing device, a laser annealing method, and a method for manufacturing a semiconductor device. Background Art

[0002] Patent document 1 discloses a laser irradiation device for irradiating a substrate with laser light in a linear manner. The laser irradiation device includes a floating unit for floating a substrate, a holding mechanism for adsorbing and holding the substrate on the floating unit, and a moving mechanism for moving the holding mechanism in a conveying direction. When viewed from above, the moving mechanisms are respectively provided at the end sides of the rectangular floating unit. The four moving mechanisms cyclically convey the substrate.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent No. 6887234 Summary of the invention

[0006] Problems to be solved by the invention

[0007] It is desired that the laser annealing process be stably performed in such a laser annealing apparatus.

[0008] Other objects and novel features will become apparent from the description of this specification and the accompanying drawings.

[0009] Means for solving problems

[0010] According to one embodiment, a laser annealing device includes: a laser light source that emits laser light for crystallizing an amorphous semiconductor film formed on a substrate; an annealing optical system that irradiates the semiconductor film with the laser light; a detection light source that emits detection light; an optical system that irradiates the semiconductor film with the detection light after being irradiated with the laser light; a light detector that detects transmitted light of the detection light passing through the substrate or reflected light of the detection light reflected by the substrate; a transport path that is used to transport the substrate to change the irradiation position of the laser light and the detection light relative to the substrate; and a processing unit that sets the process conditions for laser annealing based on the detection result of the light detector when transporting the substrate.

[0011] According to one embodiment, a laser annealing method includes: (A) a step of irradiating an amorphous semiconductor film formed on a substrate with a laser to crystallize the semiconductor film; (B) a step of irradiating the semiconductor film after irradiation with the laser with a probe light; (C) a step of detecting, using a light detector, a transmitted light of the probe light passing through the substrate or a reflected light of the probe light reflected by the substrate; (D) a step of moving the substrate to change the irradiation positions of the laser and the probe light relative to the substrate; (E) a step of setting process conditions for laser annealing based on the detection result of the light detector when moving the substrate; and (F) a step of performing laser annealing by irradiating the substrate with the laser under the process conditions to crystallize the semiconductor film.

[0012] According to one embodiment, a method for manufacturing a semiconductor device includes: (S1) setting process conditions for laser annealing; (S2) forming an amorphous semiconductor film on a substrate; and (S3) irradiating the semiconductor film with laser light under the process conditions to perform laser annealing so as to crystallize the semiconductor film, wherein the step of setting the process conditions (S1) includes: (a) irradiating the semiconductor film formed on the substrate with laser light so as to crystallize the semiconductor film; (b) irradiating the semiconductor film after being irradiated with the laser light with detection light; (c) detecting the transmitted light of the detection light passing through the substrate or the reflected light of the detection light reflected by the substrate with a light detector; (d) moving the substrate to change the irradiation position of the laser light and the detection light relative to the substrate; and (e) setting the process conditions for laser annealing based on the detection result of the light detector when moving the substrate.

[0013] According to one embodiment, a laser annealing device includes: a laser light source that emits laser light for crystallizing an amorphous semiconductor film formed on a substrate; an annealing optical system that irradiates the semiconductor film with the laser light; a detection light source that emits detection light; an optical system that irradiates the semiconductor film with the detection light after being irradiated with the laser light; a light detector that detects transmitted light of the detection light passing through the substrate or reflected light of the detection light reflected by the substrate; a transport path that is used to transport the substrate to change the irradiation position of the laser light and the detection light relative to the substrate; a beam sampler that extracts a portion of the laser light; a laser detector that detects the laser light extracted by the beam sampler; and a processing unit that sets the process conditions for laser annealing based on the detection results of the light detector and the laser detector when transporting the substrate.

[0014] According to one embodiment, the laser annealing method includes: (STA) a step of irradiating an amorphous semiconductor film formed on a substrate with a laser to crystallize the semiconductor film; (STB) a step of irradiating a probe light to the semiconductor film after being irradiated with the laser; (STC) a step of detecting, with a light detector, a transmitted light of the probe light passing through the substrate or a reflected light of the probe light reflected by the substrate; (STD) a step of extracting a portion of the laser by a beam sampler arranged in an optical path of the laser; (STE) a step of detecting, with a laser detector, the laser extracted by the beam sampler; (STF) a step of moving the substrate to change the irradiation position of the laser and the probe light relative to the substrate; (STG) a step of setting the process conditions for laser annealing based on the detection results of the light detector and the laser detector when moving the substrate; and (STH) a step of performing laser annealing by irradiating the substrate with the laser under the process conditions to crystallize the semiconductor film.

[0015] According to one embodiment, a method for manufacturing a semiconductor device includes: (S1) setting process conditions for laser annealing; (S2) forming an amorphous semiconductor film on a substrate; and (S3) irradiating the semiconductor film with laser light under the process conditions to perform laser annealing so as to crystallize the semiconductor film, wherein the step of setting the process conditions (S1) includes: (sta) irradiating the semiconductor film formed on the substrate with laser light so as to crystallize the semiconductor film; (stb) irradiating the semiconductor film after irradiation with the laser light with probe light; (stc) detecting, by a light detector, transmitted light of the probe light passing through the substrate or reflected light of the probe light reflected by the substrate; (std) extracting a portion of the laser light by a beam sampler arranged in an optical path of the laser light; (ste) detecting, by a laser detector, the laser light extracted by the beam sampler; (stf) moving the substrate to change the irradiation position of the laser light and the probe light relative to the substrate; and (stg) setting the process conditions for laser annealing based on the detection results of the light detector and the laser detector when moving the substrate.

[0016] Effects of the Invention

[0017] According to the above-described embodiments, it is possible to provide a laser annealing apparatus, a laser annealing method, and a method for manufacturing a semiconductor device that can stably perform an annealing process. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a side view showing the structure of a laser annealing device.

[0019] Figure 2It is a side view showing the structure of a laser annealing device.

[0020] Figure 3 This is a schematic diagram for explaining laser light and probe light on a substrate.

[0021] Figure 4 This is a side view showing the structure of a laser annealing apparatus according to the second embodiment.

[0022] Figure 5 This is a side view showing the structure of a laser annealing apparatus according to a third embodiment.

[0023] Figure 6 Graphs showing the detected light amounts of the laser light L1 and the probe light L3 .

[0024] Figure 7 This is a side view showing the structure of a laser annealing apparatus according to a fourth embodiment.

[0025] Figure 8 This is a flowchart showing a method for adjusting a pulse waveform in a laser annealing apparatus.

[0026] Fig. 9 This is a schematic diagram showing an example of a configuration for adjusting a pulse waveform.

[0027] Fig.10 This is a schematic diagram showing an example of a configuration for adjusting a pulse waveform.

[0028] Fig.11 It is a cross-sectional view showing a simplified structure of an organic EL display.

[0029] Fig.12 1 and 2 are cross-sectional views showing the steps of the method for manufacturing the semiconductor device according to the present embodiment.

[0030] Fig.13 1 and 2 are cross-sectional views showing the steps of the method for manufacturing the semiconductor device according to the present embodiment. DETAILED DESCRIPTION

[0031] Implementation Method 1

[0032] The laser annealing device according to the present embodiment is, for example, an excimer laser annealing (ELA) device for forming a low temperature polysilicon (LTPS) film. Hereinafter, the laser annealing device, the inspection method and the manufacturing method of the semiconductor device according to the present embodiment will be described with reference to the accompanying drawings.

[0033] use Figure 1 and Figure 2The configuration of the ELA device 1 according to the present embodiment will be described. Figure 1 1 is a side view schematically showing the ELA apparatus 1 . Figure 2 It is an XY plane view schematically showing the structure of the ELA device 1.

[0034] like Figure 1 As shown, the ELA apparatus 1 irradiates the silicon film 101 formed on the substrate 100 with laser light L1. Thus, the amorphous silicon film (amorphous silicon film: a-Si film) 101 can be converted into a polycrystalline silicon film (polycrystalline silicon film: p-Si film) 101. The substrate 100 is a transparent substrate such as a glass substrate.

[0035] It should be noted that in Figure 1 and Figure 2 In order to explain clearly, an XYZ three-dimensional orthogonal coordinate system is shown. The Z direction is a vertical direction, which is a direction perpendicular to the substrate 100. The XY plane is a plane parallel to the surface of the substrate 100 on which the silicon film 101 is formed. The X direction is the short side direction of the rectangular substrate 100, and the Y direction is the long side direction of the substrate 100.

[0036] In the ELA device 1, the laser light L1 is a linear beam with the Y direction as the length direction. While the substrate 100 is being transported in the +X direction by a linear motor or the like, the laser light L1 is irradiated onto the silicon film 101. Figure 1 , in the silicon film 101, the silicon film 101 before the irradiation of the laser light L1 is shown as an amorphous silicon film 101a, and the silicon film 101 after the irradiation of the laser light L1 is shown as a polycrystalline silicon film 101b.

[0037] The ELA apparatus 1 includes an annealing optical system 10, an illumination optical system 20, a detection optical system 30, a floating unit 43, a holding mechanism 44, and a chamber 50. The annealing optical system 10 is an optical system for irradiating the silicon film 101 with laser light L1 for crystallizing the amorphous silicon film 101a. The illumination optical system 20 and the detection optical system 30 are optical systems for evaluating the deviation of the crystal state of the substrate 100. Specifically, the process conditions of the annealing process are determined based on the detection result of the probe light L3.

[0038] The optical system of the ELA device 1 includes a laser light source 11, a reflector 12, a projection lens 13, a detection light source 21, a reflector 22, a focusing lens 24, a light detector 25, a processing device 26, a filter 27, etc. Figure 2 , the projection lens 13 is omitted.

[0039] The substrate 100 is placed on the floating unit 43. The floating unit 43 ejects gas for floating the substrate 100. The floating unit 43 ejects gas upward, and the substrate 100 floats above the floating unit 43. That is, an air gap ( Figure 1 The status of (not shown).

[0040] In addition, a holding mechanism 44 for holding the substrate 100 is provided. The holding mechanism 44 and the floating unit 43 form a transport path for transporting the substrate 100. The holding mechanism 44 is arranged outside the floating unit 43 to hold the end of the -Y side of the substrate 100. The holding mechanism 44 vacuum-adsorbs the end of the substrate 100. And, the holding mechanism 44 holding the substrate 100 is moved in the X direction by a moving mechanism (not shown). Thus, since the substrate 100 is transported in the X direction, the irradiation position of the laser L1 on the substrate 100 changes. The substrate 100 passes through the linear irradiation area P1, whereby approximately half of the substrate 100 is irradiated with the laser. Then, by rotating the substrate 100 180 degrees around the Z axis and transporting it in the same manner, the laser L1 can be irradiated to almost the entire surface of the substrate 100.

[0041] It should be noted that the chamber 50 accommodates the floating unit 43 and the optical system. For example, the floating unit 43, the holding mechanism 44, the focusing lens 24, the filter 27, the photodetector 25, etc. are arranged in the chamber 50. In addition, the chamber 50 is provided with a window 51 through which the laser light L1 and the probe light L2 pass. Thus, the laser light L1 and the probe light L2 passing through the window 51 are incident on the substrate 100.

[0042] The annealing optical system 10 for irradiating the silicon film 101 with the laser light L1 is described. The annealing optical system 10 is arranged on the upper side (+Z side) of the substrate 100. The laser light source 11 is, for example, an excimer laser light source that emits an excimer laser with a central wavelength of 308 nm. In addition, the laser light source 11 emits a pulsed laser light L1. The laser light source 11 emits the laser light L1 toward the reflector 19. The laser light L1 reflected by the reflector 19 is incident on the shaping optical system 60. The shaping optical system 60 shapes the laser light L1.

[0043] The shaping optical system 60 can shape the laser light L1 to change the spatial distribution of the laser light L1 on a plane perpendicular to the optical axis. For example, the shaping optical system 60 can shape the laser light L1 to form a line beam on the substrate 100, and further, can shape the laser light L1 so that the line beam has a top-flat distribution on the substrate 100.

[0044] In addition, the shaping optical system 60 can adjust the pulse waveform of the laser L1. For example, the shaping optical system 60 includes a branching beam splitter, a synthesis beam splitter, and a reflector. The two beams branched by the branching beam splitter are reflected by a plurality of reflectors. Then, the two beams reflected by the reflectors are synthesized by the synthesis beam splitter. In at least one beam optical path, by changing the interval between the reflectors, the optical path length of the beam changes. Thus, the pulse waveform can be adjusted so that the laser L1 has a desired pulse length.

[0045] The laser light L1 shaped by the shaping optical system 60 is incident on the reflector 12. The reflector 12 and the projection lens 13 are arranged just above the substrate 100. The reflector 12 is, for example, a dichroic mirror that selectively transmits light according to the wavelength. The reflector 12 has a wavelength characteristic of transmitting light of the wavelength of the probe light L2 and reflecting light of the wavelength of the laser light L1. Therefore, the reflector 12 reflects the laser light L1. The laser light L1 reflected by the reflector 12 travels in an oblique direction in the -Z direction and the -X direction.

[0046] The laser light L1 is reflected by the reflection mirror 12 and enters the projection lens 13. The projection lens 13 has a plurality of lenses for projecting the laser light L1 onto the substrate 100, that is, onto the silicon film 101. The laser light L1 from the projection lens 13 enters the substrate 100 through the window 51.

[0047] The projection lens 13 focuses the laser light L1 onto the substrate 100. Figure 3 , the shape of the irradiation area P1 of the laser L1 on the substrate 100 (silicon film 101) and its spatial distribution will be described. On the substrate 100, the laser L1 forms a linear irradiation area P1 along the Y direction. That is, on the substrate 100, the laser L1 is a line beam with the length direction in the Y direction and the short side direction in the X direction. While the substrate 100 is transported along the +X direction, the laser L1 is irradiated to the silicon film 101. Thus, the laser L1 can be irradiated to a strip area with a width of the length of the irradiation area P1 in the Y direction. In addition, the transport direction may not be the X direction orthogonal to the length direction of the line beam, as long as it is a direction inclined from the length direction of the line beam.

[0048] For example, the irradiation area P1 can be set to be greater than 750 mm in the Y direction. The size of the irradiation area P1 in the X direction can be set to be less than 400 μm. In addition, the laser L1 has a flat top distribution in the X direction and the Y direction. Of course, the laser L1 can also have a Gaussian distribution in at least one of the X direction and the Y direction.

[0049] Next, the illumination optical system 20 for irradiating the probe light L2 to the substrate 100 is described. The illumination optical system 20 is arranged on the upper side (+Z side) of the substrate 100. The probe light source 21 emits the probe light L2 having a different wavelength from the laser L1. As the probe light source 21, for example, a continuous oscillation wave (CW: Continuous Wave) semiconductor laser light source or the like can be used. The central wavelength of the probe light L2 is, for example, 401 nm. The wavelength of the probe light L2 is preferably a wavelength with a low absorption rate in the silicon film 101. Therefore, as the probe light source 21, it is preferable to use a laser light source or an LED (light emitting diode) light source that emits monochromatic light.

[0050] The probe light source 21 emits the probe light L2 toward the reflector 22. The reflector 22 reflects the probe light L2 toward the reflector 12. Since the reflector 12 is a dichroic mirror, the probe light L2 is transmitted. Here, the optical axes of the probe light L2 and the laser light L1 coincide. For example, the optical axes of the laser light L1 and the probe light L2 coincide with the optical axis of the projection lens 13.

[0051] The probe light L2 transmitted through the reflection mirror 12 is incident on the projection lens 13. The probe light L2 from the projection lens 13 is incident on the substrate 100 via the window 51. The projection lens 13 focuses the probe light L2 on the silicon film 101.

[0052] like Figure 3 As shown, the projection lens 13 focuses the probe light L2 so that the probe light L2 becomes a tiny light spot. In the silicon film 101, the probe light L2 is incident on the irradiation area P1. That is, in the XY plane, the irradiation point of the probe light L2 overlaps with the irradiation area P1. On the silicon film 101, a light spot of the probe light L2 is formed near the center of the Y direction of the laser light L1. For example, the light spot diameter of the probe light L2 is about 300 μm.

[0053] It should be noted that the irradiation position of the probe light L2 in the silicon film 101 may be located in or near the irradiation area P1 of the laser light L1. Figure 3 As shown by the dotted line in , the probe light L2 can be irradiated to the vicinity of the end of the irradiation area P1 in the Y direction. The irradiation position of the probe light L2 can be included in the irradiation area P1. In addition, the irradiation position of the probe light L2 is not limited to the position overlapping with the irradiation area P1, and can also deviate from the irradiation area P1. For example, the irradiation position of the probe light L2 can deviate from the irradiation area P1 of the laser L1 in the +X direction. In this case, the probe light L2 is incident on the silicon film 101 immediately after the laser L1 is irradiated on the silicon film 101. Therefore, the probe light L2 is incident on the silicon film 101 in a state where the silicon film 101 is melted by the laser L1.

[0054] In addition, the probe light L2 may be irradiated to a plurality of positions of the silicon film 101. For example, the probe light L2 may be irradiated to three positions near the center and both ends of the irradiation area P1 in the Y direction. In the case where a plurality of probe lights L2 are irradiated to the silicon film 101, a plurality of probe light sources 21 may be used. Alternatively, the probe light L2 from one probe light source 21 may be branched by a beam splitter or the like to form a plurality of light beams.

[0055] At least a part of the probe light L2 passes through the silicon film 101. The light transmitted through the silicon film 101 in the probe light L2 is referred to as the probe light L3. The floating unit 43 is provided with an opening 43a for the probe light L3 to pass through. The probe light L3 propagates through the detection optical system 30 after passing through the opening 43a.

[0056] The detection optical system 30 disposed below the substrate 100 will be described. The detection optical system 30 includes a condenser lens 24 and a filter 27. The condenser lens 24 and the filter 27 are disposed below the floating unit 43.

[0057] The detection light L3 passing through the opening 43a is incident on the condenser lens 24. The condenser lens 24 condenses the detection light L3 onto the light receiving surface of the photodetector 25. The photodetector 25 has, for example, a photodiode, and detects the detection light L3. In addition, a filter 27 is arranged between the condenser lens 24 and the photodetector 25. The filter 27 is a wavelength filter that allows light of the wavelength of the detection light L3 to pass through and cuts off the wavelength of the laser light L1. This can prevent the laser light L1 diffused by the floating unit 43, the chamber 50, etc. from being incident on the photodetector 25. For example, the filter 27 is a bandpass filter, a longpass filter, etc.

[0058] The photodetector 25 outputs a detection signal corresponding to the detection light amount of the probe light L3 to the processing device 26. The processing device 26 is a computer having a memory, a processor, etc. The detection value of the detection signal corresponds to the transmittance of the silicon film 101. In addition, since the substrate 100 is conveyed at a constant speed in the +X direction, the photodetector 25 detects the distribution of the detection light amount (i.e., the transmittance of the silicon film 101) in the X direction.

[0059] The processing device 26 is a computing unit that performs a predetermined operation on the detection value of the detection signal. It should be noted that the processing device 26 may include an A / D converter that converts the analog detection signal A / D into a digital detection value. Alternatively, the photodetector 25 may include an A / D converter that converts the analog detection signal A / D into a digital detection value.

[0060] The photodetector 25 detects the detection light L3 while scanning the substrate 100 in the +X direction. Therefore, the processing device 26 obtains a plurality of detection values ​​according to the sampling rate of the photodetector 25 or the A / D converter. The processing device 26 has a memory or the like for storing the plurality of detection values. Since the substrate 100 is scanned at a constant speed in the +X direction, the plurality of detection values ​​show the distribution of the transmittance in the X direction.

[0061] Here, the transmittance of the silicon film 101 changes according to the melting state of silicon. Specifically, when silicon melts, the reflectivity increases and the transmittance decreases. In the case where silicon is not fully melted, the amount of transmitted light of the probe light L3 decreases. The amount of detection light of the photodetector 25 changes according to the state of the silicon film 101. The processing device 26 controls the shaping optical system 60 based on the detection signal from the photodetector 25. Specifically, the processing device 26 controls the pulse waveform so that the deviation of the polycrystalline silicon film 101b becomes smaller. For example, the processing device 26 generates a control signal for controlling the pulse length, etc., and outputs it to the shaping optical system 60. Thereby, the position of the reflector of the shaping optical system 60 is adjusted, and the pulse waveform is changed.

[0062] In this way, the probe light L2 is irradiated to the area just irradiated by the laser L1. That is, the probe light L2 is incident on the silicon film 101 in a molten state. Then, the light detector 25 detects the probe light L3 that passes through the substrate 100. Then, based on the detection signal from the light detector 25, the processing device 26 determines the pulse waveform. Thus, the ELA device 1 can set process conditions that can suppress irradiation unevenness. The processing device 26 can determine the optimal process conditions for the annealing process. The ELA device 1 performs an annealing process on the production substrate 100 under the set process conditions. A stable annealing process can be achieved. Thus, productivity can be improved.

[0063] It should be noted that the process conditions of laser annealing are not limited to the pulse waveform. For example, the process conditions may be the peak intensity, repetition frequency, spatial distribution, polarization state, etc. of the laser L1. In addition, the conveying speed of the substrate 100, the inclination angle of the line beam relative to the conveying direction, etc. may be used as process conditions. In addition, a plurality of substrates 100 may be processed for setting the optimal process conditions.

[0064] It should be noted that the optical system module 40 is disposed above the substrate 100 . The optical system module 40 carries at least a part of the above optical system. Specifically, the optical system module 40 includes a reflector 19 , a shaping optical system 60 , a reflector 12 , and a projection lens 13 . The optical system module 40 is disposed in a chamber 50 .

[0065] In addition, as described above, a plurality of probe lights L2 may be irradiated to the substrate 100. Then, the light detector 25 may detect the plurality of probe lights L3 transmitted through the substrate 100, respectively. In this case, a plurality of light detectors 25 corresponding to the plurality of probe lights L3 may be arranged below the substrate 100. Then, the processing device 26 sets the process conditions based on the average value of the detection signals of the plurality of probe lights L3, etc. Thus, the annealing process can be performed under more appropriate process conditions.

[0066] Implementation Method 2

[0067] use Figure 4 The configuration of the ELA apparatus 1 according to the present embodiment will be described. Figure 4 1 is a side view schematically showing the structure of the ELA device 1. The difference between the ELA device 1 of this embodiment and the embodiment 1 is that the laser light L1 and the probe light L2 are not coaxial. It should be noted that since the main structure of the ELA device 1 is the same as that of the embodiment 1, the description will be appropriately omitted. For example, in Figure 4 In the figure, the laser light source 11, the reflecting mirror 12, the shaping optical system 60, etc. are omitted.

[0068] The detection light L2 from the detection light source 21 is incident on the reflector 22. The reflector 22 is arranged above the substrate 100. The reflector 22 reflects the detection light L2 toward the substrate 100. The detection light L2 reflected by the reflector 22 is focused toward the substrate 100 by the lens 28. Figure 3 As shown, the probe light L2 forms a tiny light spot on the substrate 100. It should be noted that since the probe light L2 is not coaxial with the laser light L1, the probe light L2 does not enter the projection lens 13. Therefore, the probe light L2 enters the substrate 100 from the outside of the projection lens 13.

[0069] The probe light L2 transmitted through the substrate 100 is referred to as the probe light L3. The probe light L3 enters the condenser lens 24 through the opening 43a of the floating unit 43. The condenser lens 24 condenses the probe light L3 onto the light receiving surface of the photodetector 25. The probe light L3 from the condenser lens 24 enters the photodetector 25 via the filter 27.

[0070] In such a configuration, as in the first embodiment, appropriate process conditions of the laser light L1 can be set. That is, the shaping optical system 60 shapes the pulse waveform of the laser light L1 based on the detection signal. Thus, a stable annealing process can be achieved, and productivity can be improved. It should be noted that in the second embodiment, since the detection light L2 is not incident on the reflector 12, the reflector 12 can be a metal reflector, a multilayer film reflector, or the like.

[0071] exist Figure 1 , Figure 4In the embodiment, the light detector 25 is arranged on the lower side of the substrate 100, and the detection light source 21 is arranged on the upper side, but the arrangement of the detection light source 21 and the light detector 25 may be reversed. For example, the light detector 25 may be arranged on the upper side of the substrate 100, and the detection light source 21 may be arranged on the lower side of the substrate 100. In this case, the detection light may or may not pass through the projection lens 13.

[0072] Implementation 3

[0073] use Figure 5 The configuration of the ELA apparatus 1 according to the present embodiment will be described. Figure 5 1 is a side view schematically showing the structure of the ELA device 1. The ELA device 1 of this embodiment is different from Embodiments 1 and 2 in that the photodetector 25 detects the reflected light reflected by the substrate 100. That is, the photodetector 25 does not detect the transmitted light passing through the substrate 100. It should be noted that the description of the same structure as that of Embodiments 1 and 2 will be appropriately omitted. For example, since the annealing optical system 10 is the annealing optical system of Embodiment 1 and the illumination optical system 20 is the same as that of Embodiment 2, their descriptions are omitted.

[0074] In the third embodiment, the detection optical system 30 is arranged above the substrate 100 . Specifically, on the upper side of the chamber 50 , the condenser lens 24 , the reflection mirror 29 , the filter 27 , and the photodetector 25 are arranged.

[0075] The reflected light reflected by the silicon film 101 is set as the probe light L4. The probe light L4 passes through the window 51 and enters the condenser lens 24. The probe light L4 from the condenser lens 24 is reflected by the reflector 29 and enters the filter 27. The probe light L4 that passes through the filter 27 is incident on the photodetector 25. With such a configuration, as in the first and second embodiments, since appropriate process conditions can be set, a stable process can be achieved.

[0076] In addition, in this embodiment, a workbench 46 for adsorbing the substrate 100 is used instead of the floating unit 43. That is, the substrate 100 is placed on the workbench 46. The workbench 46 holds the substrate 100 by vacuum adsorption or the like. In addition, the workbench 46 is a driving workbench that transports the substrate 100 in the X direction. Therefore, as the workbench 46 moves, the irradiation positions of the laser light L1 and the probe light L2 relative to the substrate 100 change. Thus, the workbench 46 forms a transport path for transporting the substrate 100.

[0077] Thus, in Embodiment 3, the reflected light reflected by the substrate 100 becomes the probe light L4. Of course, as in Embodiments 1 and 2, the transmitted light passing through the substrate 100 may become the probe light L3. That is, the photodetector 25 may detect the transmitted light passing through the substrate 100, and may also detect the reflected light reflected by the substrate 100. In addition, two or more photodetectors 25 may be prepared to detect both the transmitted light and the reflected light.

[0078] Figure 6 It is a graph showing the pulse waveform of laser L1 and the reflected light intensity (the detected light amount of probe light L4). The horizontal axis is time and the vertical axis is the light amount. Since the reflectivity increases as the melting of the silicon film 101 proceeds, the reflected light intensity increases. Since the melting starts from the peak of the pulse waveform of laser L1, the reflected light intensity changes. The reflected light intensity shows a maximum value immediately after the peak. The maximum value of the reflected light intensity indicates the maximum melting depth of silicon. Since solidification gradually proceeds along the film thickness direction after reaching the maximum melting depth, the reflected light intensity gradually decreases. Silicon becomes completely solidified, and the reflected light intensity returns to the level before the pulse light irradiation.

[0079] Then, as the melting time becomes longer, the processing device 26 changes the process conditions. The melting time is changed by Figure 6 The time from t1 to t2 in FIG. 1 is shown. The pulse waveform is set so that the silicon is kept in a molten state for a longer time by a single pulse of light. That is, the process conditions of the pulse waveform are set so that the time t2 becomes later. By doing so, a more stable annealing process can be achieved. It should be noted that t2 corresponds to the moment when the reflected light intensity is lower than the threshold value as the solidification of silicon proceeds.

[0080] The laser annealing method using the ELA apparatus according to the present embodiment may include the following steps (A) to (F).

[0081] (A) A step of irradiating an amorphous semiconductor film formed on a substrate with laser light to crystallize the semiconductor film.

[0082] (B) A step of irradiating the semiconductor film irradiated with the laser light with a probe light.

[0083] (C) A step of detecting, using a photodetector, light of the probe light transmitted through the substrate or light of the probe light reflected by the substrate.

[0084] (D) A step of moving the substrate to change the irradiation positions of the laser light and the probe light relative to the substrate.

[0085] (E) A step of setting process conditions for laser annealing based on the detection result of the light detector when the substrate is conveyed.

[0086] (F) performing laser annealing in which the substrate is irradiated with the laser light under the process conditions to crystallize the semiconductor film.

[0087] This allows stable laser annealing.

[0088] The laser annealing method using the ELA apparatus according to the present embodiment may include the following steps (STA) to (STH).

[0089] (STA) A step of irradiating an amorphous semiconductor film formed on a substrate with laser light to crystallize the semiconductor film.

[0090] (STB) A step of irradiating the semiconductor film irradiated with the laser light with a probe light.

[0091] (STC) A step of detecting, using a light detector, transmitted light of the probe light that passes through the substrate or reflected light of the probe light that is reflected by the substrate.

[0092] (STD) A step of extracting a portion of the laser light by a beam sampler disposed in an optical path of the laser light.

[0093] (STE) The step of detecting the laser light extracted by the beam sampler with a laser detector.

[0094] (STF) A step of moving the substrate to change the irradiation positions of the laser light and the probe light relative to the substrate.

[0095] (STG) A step of setting process conditions for laser annealing based on detection results of the light detector and the laser detector when the substrate is conveyed.

[0096] (STH) A step of performing laser annealing by irradiating the substrate with the laser light under the process conditions to crystallize the semiconductor film.

[0097] In addition, in setting the process conditions, a substrate dedicated to setting the conditions may be used, or an actual substrate on which an actual device is formed may be used. In addition, it is preferred that the process conditions are set regularly. For example, the substrate 100 used to set the process conditions may be transported every few days or weeks for laser annealing. Then, the process conditions are updated according to the latest measurement results.

[0098] In addition, the process conditions can be updated during the process. That is, the processing device 26 can optimize the process conditions during the process by providing feedback based on the measurement results. Thus, the ELA device 1 can perform laser annealing under the optimal process conditions.

[0099] Implementation 4

[0100] use Figure 7 The ELA apparatus 1 according to the fourth embodiment will be described. Figure 7 1 is a side view schematically showing the configuration of the ELA device 1. In this embodiment, a lens 15 and a laser detector 16 are added to the annealing optical system 10. In addition, in the annealing optical system 10 and the illumination optical system 20, a beam sampler 14 for extracting a portion of the laser light is provided instead of the reflector 12. The basic configuration other than the beam sampler 14, the lens 15, and the laser detector 16 is the same as that of the above-mentioned embodiment, and therefore the description thereof is appropriately omitted.

[0101] The beam sampler 14 is arranged in the optical path of the laser L1. Specifically, the beam sampler 14 is a partially transparent mirror that transmits a part of the incident light and reflects the remaining part. For example, the beam sampler 14 has optical characteristics of high reflectivity and low transmittance relative to the laser wavelength. Alternatively, the beam sampler 14 can be an open-hole reflector with a tiny hole. Thus, the beam sampler 14 extracts a part of the laser L1. The beam sampler 14 reflects most of the laser L1 toward the projection lens 13.

[0102] The laser beam transmitted through the beam sampler 14 is referred to as the beam L5. The beam L5 enters the laser detector 16 via the lens 15. The lens 15 focuses the beam L5 toward the laser detector 16. The laser detector 16 is a photodiode or the like, and detects the beam L5. The laser detector 16 detects the beam L5 and outputs a detection signal corresponding to the detected light amount to the processing device 26.

[0103] The processing device 26 can detect the pulse waveform of the light beam L5. Then, the processing device 26 sets the process conditions based on the pulse waveform of the light beam L5. For example, the processing device 26 adjusts the process conditions so that Figure 6 The melting time shown is longer.

[0104] Specifically, the processing device 26 may pre-register a reference waveform that makes the melting time longer. Then, the processing device 26 sets the process conditions so that the pulse waveform is close to the reference waveform. Specifically, the processing device 26 adjusts the peak intensity of the pulse light. In other words, the adjustment Figure 6 The time interval between the first peak and the second ridge is shown. Thus, annealing can be performed stably.

[0105] use Figure 8 Next, the pulse waveform adjustment performed by the processing device 26 will be described. Figure 8 is a flow chart showing a method for adjusting a pulse waveform. It should be noted that, here, it is assumed that Figure 7 As shown, the laser detector 16 detects the light beam L5, and the light detector 25 detects the detection light L3. The processing device 26 is as shown in FIG. Figure 6The pulse waveform of the detection light beam L5 and the pulse waveform of the probe light L3 are shown. In addition, although the probe light L3 is described as reflected light reflected by the substrate 100, it may be transmitted light that passes through the substrate 100.

[0106] First, the processing device 26 calculates the melting time based on the detection result of the detection light L3 (S101). As described above, when silicon melts, the reflectivity increases and the transmittance decreases. Therefore, the processing device 26 can calculate the melting time based on the detection result of the detection light L3. For example, Figure 6 As shown, the melting time is the time period from t1 to t2. t1 corresponds to the peak time of the light beam L5. t2 corresponds to the time when the intensity of the reflected light as the detection light L3 is lower than the threshold level. Therefore, the time period from t1 to t2 can be set as the melting time.

[0107] Next, the processing device 26 determines whether the melting time has changed (S102). For example, the processing device 26 compares the melting time generated by the most recent pulse irradiation with the melting time generated by the previous pulse irradiation to determine whether the melting time has changed. Alternatively, the processing device 26 can detect the change in the melting time by comparing the melting time with a preset threshold time.

[0108] If the melting time does not change ("No" in S102), the processing device 26 continues to measure the melting time. If the melting time changes ("Yes" in S102), the processing device 26 compares the pulse waveform (S103). For example, the processing device 26 pre-registers a standard pulse waveform. The standard pulse waveform is a waveform that can lengthen the melting time. The standard pulse waveform includes information about Figure 6 The processing device 26 compares the measured pulse waveform with the standard pulse waveform.

[0109] Next, the processing device 26 calculates a correction method based on the comparison result (S104). For example, the processing device 26 performs a correction operation to make the measured pulse waveform close to the standard pulse waveform. Specifically, the processing device 26 calculates the correction amount for the time interval and intensity between the first peak and the second ridge. The processing device 26 calculates the correction amount to make the pulse waveform close to the standard pulse waveform. For example, the processing device 26 calculates the correction amount for the second ridge so that the time interval between the first peak and the second ridge becomes longer. Alternatively, the processing device 26 calculates the correction amount for the intensity ratio of the first peak and the second ridge.

[0110] Then, the processing device 26 corrects the pulse waveform (S105). For example, the processing device 26 outputs a correction signal to the laser light source 11 to change the laser intensity, etc. The processing device 26 outputs a correction signal to the laser light source 11 to change the time interval between the first peak and the second ridge. Alternatively, the processing device 26 outputs a correction signal to the laser light source 11 to change the laser intensity. By doing so, since the ELA device 1 can perform laser annealing under appropriate process conditions, silicon can be stably crystallized.

[0111] (Pulse waveform adjustment)

[0112] Next, use Fig. 9 The configuration for adjusting the pulse waveform will be described below. Fig. 9 Schematically shows a structure including two laser light sources 11a and 11b as the laser light source 11. It should be noted that: Fig. 9 The figure shows the configuration of the laser light source 11 and the shaping optical system 60. The laser light source 11a and the laser light source 11b are pulse laser light sources, respectively, and generate pulse laser light.

[0113] The laser light from the laser light source 11a is set as the laser light L1a, and the laser light from the laser light source 11b is set as the laser light L1b. The laser light L1a and the laser light L1b are incident on the beam splitter 17. The beam splitter 17 is a semi-transparent and semi-reflective mirror, etc., and synthesizes the laser light L1a and the laser light L1b. The laser light L1a and the laser light L1b synthesized by the beam splitter 17 become coaxial and propagate. It should be noted that the laser light synthesized by the laser light L1a and the laser light L1b is set as the laser light L1. The laser light L1 is incident on the shaping optical system 60. Since the shaping optical system 60 is the same as that in the above-mentioned embodiment, the description will be omitted below.

[0114] Laser L1 is a waveform synthesized from two pulses. The peak of laser L1a corresponds to Figure 6 The first peak in the laser L1b corresponds to Figure 6 The processing device 26 independently controls the laser light source 11a and the laser light source 11b. The processing device 26 can adjust the pulse waveform by controlling the laser light source 11a and the laser light source 11b. For example, the processing device 26 adjusts the laser intensity by controlling the output of the laser light source 11a and the laser light source 11b. The melting time can be prolonged by adjusting the laser intensity. That is, the processing device 26 adjusts the laser intensity, the intensity ratio, etc. based on the detection results of the probe light L3, the light beam L5, etc. As a result, the melting time can be prolonged and a stable process can be achieved.

[0115] Alternatively, the processing device 26 can adjust the pulse waveform by controlling the oscillation timing of the laser light source 11a and the laser light source 11b. Alternatively, the processing device 26 can also adjust the pulse waveform by changing the optical path length of at least one of the laser L1a and the laser L1b. For example, by adjusting the oscillation timing and the optical path length, the time between the first peak and the second ridge can be changed. In this way, the melting time can be lengthened, and a stable process can be achieved.

[0116] Fig.10 It is a diagram showing another configuration for adjusting the pulse waveform. Fig.10 FIG. 1 shows a configuration of a part of the shaping optical system 60. Beam splitters 17a and 17b and reflection mirrors 18a to 18c are provided in the optical path of the shaping optical system 60. The beam splitters 17a and 17b are, for example, half mirrors.

[0117] The laser light L11 from the laser light source 11 is split into two light beams L12 and L13 by the beam splitter 17a. The light beam L12 reflected by the beam splitter 17a enters the reflection mirror 18a. The light beam L12 reflected by the reflection mirror 18a enters the beam splitter 17b.

[0118] The light beam L13 transmitted through the beam splitter 17a is directly incident on the beam splitter 17b. The beam splitter 17b combines the light beams L12 and L13. The laser light coaxially combined by the beam splitter 17b is referred to as the laser light L1. The laser light L1 from the beam splitter 17b is incident on the reflector 18c. The laser light L1 reflected by the reflector 18c is incident on the reflector 18c. Figure 1 The laser light L1 is incident on the shaping optical system 60 shown. The laser light L1 is a waveform synthesized from two pulse lights.

[0119] Here, since there is a difference in optical path length between the light beam L12 and the light beam L13, the pulse of the light beam L12 lags behind the pulse of the light beam L13. Then, by changing the positions of the reflectors 18a and 18b, the difference in optical path length changes. That is, the processing device 26 can adjust the pulse waveform by controlling the positions of the reflectors 18a and 18b. For example, the processing device 26 can lengthen the optical path length of the light beam L12 by moving the reflectors 18a and 18b the same distance in the +X direction.

[0120] The processing device 26 changes the optical path length based on the detection results of the probe light L3, the light beam L5, etc. Thus, for example, the time between the first peak and the second ridge can be changed. Therefore, the melting time can be lengthened, and a stable process can be achieved.

[0121] In addition, Fig.10 In the structure, the laser intensity can also be adjusted. For example, multiple dimming filters with different transmittances are prepared in advance. By changing the neutral density filter configured in the optical path, the laser intensity, intensity ratio, etc. can be adjusted.

[0122] Thus, the ELA device 1 according to embodiments 1 to 4 irradiates the semiconductor film after being irradiated with the laser light L1 with the probe light L2. Then, the light detector 25 detects the probe light L4 reflected by the semiconductor film or the probe light L3 transmitted through the semiconductor film. Here, the time of irradiating the semiconductor film with the probe light L2 only needs to be after the irradiation with the laser light L1. That is, the semiconductor film can be irradiated with the probe light L2 immediately after the irradiation start time of the pulsed laser light L1. Thus, the semiconductor film irradiated with the laser light L1 is irradiated with the probe light L2. Then, the light detector 25 can detect the probe light from the semiconductor film in a molten state. The irradiation time and irradiation position of the pulsed laser light L1 and the probe light L2 can at least partially overlap. That is, the semiconductor film can be irradiated with the probe light L2 during the irradiation of the laser light L1.

[0123] Alternatively, the irradiation position of the probe light L2 may be offset to the downstream side of the conveying direction relative to the irradiation position of the laser. In this case, the probe light L2 may be irradiated to the semiconductor film immediately after the irradiation of the pulsed laser light L1 is completed. Thus, the light detector 25 can detect the probe light from the semiconductor film in a molten state. That is, the irradiation timing and irradiation position of the pulsed laser light L1 and the probe light L2 may be staggered.

[0124] (Organic EL Display)

[0125] The semiconductor device having the polysilicon film is suitable for a TFT (Thin Film transistor) array substrate for an organic EL (Electro Luminescence) display. That is, the polysilicon film is used as a semiconductor layer having a source region, a channel region, and a drain region of a TFT.

[0126] Hereinafter, a configuration in which the semiconductor device according to the present embodiment is applied to an organic EL display will be described. Fig.11 This is a cross-sectional view showing a pixel circuit of an organic EL display in a simplified manner. Fig.11 The organic EL display 300 shown is an active matrix type display device in which a TFT is arranged in each pixel PX.

[0127] The organic EL display 300 includes a substrate 310, a TFT layer 311, an organic layer 312, a color filter layer 313, and a sealing substrate 314. Fig.11 , a top-emitting organic EL display in which the sealing substrate 314 side is the visible side is shown. It should be noted that the following description is an example of a configuration of an organic EL display, and this embodiment is not limited to the configuration described below. For example, the semiconductor device according to this embodiment can also be used for a bottom-emitting organic EL display.

[0128] The substrate 310 is a glass substrate or a metal substrate. A TFT layer 311 is provided on the substrate 310. The TFT layer 311 has a TFT 311a disposed in each pixel PX. The TFT layer 311 has wiring (not shown) connected to the TFT 311a. The TFT 311a and the wiring constitute a pixel circuit.

[0129] An organic layer 312 is provided on the TFT layer 311. The organic layer 312 has an organic EL light emitting element 312a arranged for each pixel PX. In addition, in the organic layer 312, a partition wall 312b for separating the organic EL light emitting element 312a is provided between the pixels PX.

[0130] A color filter layer 313 is provided on the organic layer 312. The color filter layer 313 is provided with a color filter 313a for color display. That is, a resin layer colored R (red), G (green) or B (blue) is provided as the color filter 313a in each pixel PX.

[0131] A sealing substrate 314 is provided on the color filter layer 313. The sealing substrate 314 is a transparent substrate such as a glass substrate, and is provided to prevent the organic EL light emitting element of the organic layer 312 from being deteriorated.

[0132] The current flowing to the organic EL light emitting element 312a of the organic layer 312 changes according to the display signal supplied to the pixel circuit. Therefore, by supplying a display signal corresponding to the display image to each pixel PX, the light emission amount in each pixel PX can be controlled. Thus, the desired image can be displayed.

[0133] In an active matrix display device such as an organic EL display, one or more TFTs (for example, a switching TFT or a driving TFT) are provided in one pixel PX. In addition, a semiconductor layer having a source region, a channel region, and a drain region is provided in the TFT of each pixel PX. The polycrystalline silicon film according to the present embodiment is suitable for the semiconductor layer of the TFT. That is, by using the polycrystalline silicon film manufactured by the above-mentioned manufacturing method for the semiconductor layer of the TFT array substrate, the in-plane deviation of the TFT characteristics can be suppressed. Therefore, a display device with excellent display characteristics can be manufactured with high productivity.

[0134] <Semiconductor Device Manufacturing Process>

[0135] The method for manufacturing a semiconductor device using the laser annealing device according to this embodiment is suitable for manufacturing a TFT array substrate. Fig.12 , Fig.13 A method for manufacturing a semiconductor device including a TFT will be described. Fig.12 , Fig.131 is a cross-sectional view showing a process of manufacturing a semiconductor device. In the following description, a method of manufacturing a semiconductor device having an inverted-staggered TFT is described. Fig.12 , Fig.13 , a step of forming a polysilicon film in a semiconductor manufacturing method is shown. It should be noted that, for other manufacturing steps, known methods can be used, and thus description thereof will be omitted.

[0136] like Fig.12 As shown, a gate electrode 402 is formed on a glass substrate 401. A gate insulating film 403 is formed on the gate electrode 402. An amorphous silicon film 404 is formed on the gate insulating film 403. The amorphous silicon film 404 is arranged to overlap the gate electrode 402 via the gate insulating film 403. For example, the gate insulating film 403 and the amorphous silicon film 404 are continuously formed by a CVD (Chemical Vapor Deposition) method.

[0137] And, if Fig.13 As shown in FIG. 1 , by irradiating the amorphous silicon film 404 with laser light L1, a polycrystalline silicon film 405 is formed. Figure 1 The ELA apparatus 1 shown in the first figure etc. crystallizes the amorphous silicon film 404. Thus, a polysilicon film 405 obtained by crystallizing silicon is formed on the gate insulating film 403. The polysilicon film 405 corresponds to the above-mentioned polysilicon film 101b.

[0138] The method for manufacturing a semiconductor device according to the present embodiment may include the following steps.

[0139] (S1) A step of setting process conditions for laser annealing.

[0140] (S2) A step of forming an amorphous semiconductor film on a substrate.

[0141] (S3) a step of irradiating the semiconductor film with laser light under the process conditions to perform laser annealing to crystallize the semiconductor film.

[0142] (S1) The step of setting process conditions includes the following steps (a) to (e).

[0143] (a) A step of irradiating a semiconductor film formed on a substrate with laser light to crystallize the semiconductor film.

[0144] (b) A step of irradiating the semiconductor film irradiated with the laser light with a probe light.

[0145] (c) A step of detecting, by a photodetector, light of the probe light transmitted through the substrate or light of the probe light reflected by the substrate.

[0146] (d) A step of moving the substrate to change the irradiation positions of the laser light and the probe light relative to the substrate.

[0147] (e) A step of setting process conditions for laser annealing based on a detection result of the light detector when the substrate is conveyed.

[0148] Thus, laser annealing can be performed stably, thereby improving productivity.

[0149] The method for manufacturing a semiconductor device according to the present embodiment may include the following steps.

[0150] (S1) A step of setting process conditions for laser annealing.

[0151] (S2) A step of forming an amorphous semiconductor film on a substrate.

[0152] (S3) a step of irradiating the semiconductor film with laser light under the process conditions to perform laser annealing to crystallize the semiconductor film.

[0153] (S1) The step of setting process conditions may include the following steps.

[0154] (sta) A step of irradiating a semiconductor film formed on a substrate with laser light to crystallize the semiconductor film.

[0155] (stb) A step of irradiating the semiconductor film irradiated with the laser light with a probe light.

[0156] (stc) A step of detecting, using a light detector, transmitted light of the probe light passing through the substrate or reflected light of the probe light reflected by the substrate.

[0157] (std) A step of extracting a portion of the laser light by a beam sampler disposed in an optical path of the laser light.

[0158] (ste) a step of detecting the laser light extracted by the beam sampler with a laser detector.

[0159] (stf) a step of moving the substrate to change the irradiation positions of the laser light and the probe light relative to the substrate.

[0160] (stg) A step of setting process conditions for laser annealing based on detection results of the light detector and the laser detector when the substrate is conveyed.

[0161] In addition, in the above description, the laser annealing device according to the present embodiment is described as a device for irradiating an amorphous silicon film with laser light to form a polycrystalline silicon film, but it can also be a device for irradiating an amorphous silicon film with laser light to form a microcrystalline silicon film. In addition, the laser for annealing is not limited to an excimer laser, and it can also be an Nd:YAG laser or the like. In addition, the method according to the present embodiment can also be applied to a laser annealing device for crystallizing a semiconductor film other than a silicon film. That is, as long as it is a laser annealing device for irradiating a semiconductor film with laser light to crystallize the semiconductor film, the method according to the present embodiment can be applied. According to the laser annealing device of the present embodiment, the laser annealing process can be stably performed.

[0162] It should be noted that the present invention is not limited to the above-described embodiments, and can be appropriately modified without departing from the gist of the invention.

[0163] This application claims priority based on Japanese Patent Application No. 2023-128365 filed on August 7, 2023 and priority based on Japanese Patent Application No. 2023-191215 filed on November 9, 2023, and all disclosed contents are incorporated herein.

Claims

1. A laser annealing device, characterized in that: include: a laser light source for emitting laser light for crystallizing an amorphous semiconductor film formed on a substrate; an annealing optical system that irradiates the semiconductor film with the laser beam; a detection light source that emits detection light; an optical system for irradiating the semiconductor film irradiated with the laser light with the probe light; a light detector configured to detect a transmitted light of the probe light transmitted through the substrate or a reflected light of the probe light reflected by the substrate; a transport path for transporting the substrate to change the irradiation positions of the laser light and the probe light relative to the substrate; as well as The processing unit sets the process conditions of the laser annealing according to the detection result of the photodetector when the substrate is conveyed.

2. The laser annealing device according to claim 1, characterized in that: The laser is a pulsed laser, The annealing optical system includes a shaping optical system that shapes the pulse waveform of the pulse laser.

3. The laser annealing device according to claim 1, characterized in that: The annealing optical system irradiates the substrate with the laser so that the laser forms a linear irradiation area on the substrate. On the substrate, the irradiation position of the probe light overlaps with the irradiation area, In a top view, a length direction of the irradiation area is inclined relative to a conveying direction of the conveying path.

4. The laser annealing device according to any one of claims 1 to 3, characterized in that: The semiconductor film is irradiated with the laser beam through the annealing optical system, so that the semiconductor film melts. The probe light is irradiated toward the semiconductor film in a molten state.

5. A laser annealing method, characterized in that: include: (A) a step of irradiating an amorphous semiconductor film formed on a substrate with laser light to crystallize the semiconductor film; (B) irradiating the semiconductor film irradiated with the laser with probe light; (C) detecting, with a light detector, light transmitted through the substrate or reflected light of the probe light reflected by the substrate; (D) a step of moving the substrate to change the irradiation positions of the laser light and the probe light relative to the substrate; (E) a step of setting process conditions for laser annealing according to a detection result of the light detector when the substrate is conveyed; as well as (F) performing laser annealing in which the substrate is irradiated with the laser light under the process conditions to crystallize the semiconductor film.

6. The laser annealing method according to claim 5, characterized in that: The laser is a pulsed laser, In the step (E), the pulse waveform of the pulse laser is adjusted as the process condition.

7. The laser annealing method according to claim 5, characterized in that: In the step (A), the substrate is irradiated with the laser so that the laser forms a linear irradiation area on the substrate. On the substrate, the irradiation position of the probe light overlaps with the irradiation area, In a plan view, a length direction of the irradiation area is inclined relative to a conveying direction of the substrate.

8. The laser annealing method according to any one of claims 5 to 7, characterized in that: In the step (A), the semiconductor film is melted by irradiating the semiconductor film with the laser. The probe light is irradiated toward the semiconductor film in a molten state.

9. A method for manufacturing a semiconductor device, characterized in that: include: (S1) a step of setting process conditions for laser annealing; (S2) a step of forming an amorphous semiconductor film on a substrate; as well as (S3) a step of irradiating the semiconductor film with laser light under the process conditions to perform laser annealing to crystallize the semiconductor film, (S1) The step of setting process conditions comprises: (a) irradiating a semiconductor film formed on a substrate with laser light to crystallize the semiconductor film; (b) irradiating the semiconductor film irradiated with the laser with probe light; (c) detecting, by a light detector, the transmitted light of the probe light passing through the substrate or the reflected light of the probe light reflected by the substrate; (d) a step of moving the substrate to change the irradiation positions of the laser light and the probe light relative to the substrate; and (e) A step of setting process conditions for laser annealing based on a detection result of the light detector when the substrate is conveyed.

10. The method for manufacturing a semiconductor device according to claim 9, wherein: The laser is a pulsed laser, In the step (e), the pulse waveform of the pulse laser is adjusted as the process condition.

11. The method for manufacturing a semiconductor device according to claim 9, wherein: In the step (a), the substrate is irradiated with the laser so that the laser forms a linear irradiation area on the substrate. On the substrate, the irradiation position of the probe light overlaps with the irradiation area, In a plan view, a length direction of the irradiation area is inclined relative to a conveying direction of the substrate.

12. The method for manufacturing a semiconductor device according to any one of claims 9 to 11, characterized in that: In the step (a), the semiconductor film is melted by irradiating the semiconductor film with the laser. The probe light is irradiated toward the semiconductor film in a molten state.

13. A laser annealing device, characterized in that: include: a laser light source for emitting laser light for crystallizing an amorphous semiconductor film formed on a substrate; an annealing optical system that irradiates the semiconductor film with the laser beam; a detection light source that emits detection light; an optical system for irradiating the semiconductor film irradiated with the laser light with the probe light; a light detector configured to detect a transmitted light of the probe light transmitted through the substrate or a reflected light of the probe light reflected by the substrate; a transport path for transporting the substrate to change the irradiation positions of the laser light and the probe light relative to the substrate; a beam sampler that extracts a portion of the laser light; a laser detector that detects laser light extracted by the beam sampler; as well as The processing unit sets the process conditions of the laser annealing according to the detection results of the photodetector and the laser detector when the substrate is conveyed.

14. The laser annealing device according to claim 13, characterized in that: The processing unit calculates the melting time of the semiconductor film caused by the irradiation of the laser light based on the detection result of the laser detector. When the melting time varies, the pulse waveform of the laser light is adjusted so that the pulse waveform of the laser light approaches a reference waveform.

15. The laser annealing device according to claim 14, characterized in that: irradiating the semiconductor film with the laser light obtained by synthesizing two pulse laser lights, The pulse waveform is adjusted by changing the intensity or optical path length of at least one of the two pulse laser beams.

16. A laser annealing method, characterized in that: include: (STA) a step of irradiating an amorphous semiconductor film formed on a substrate with laser light to crystallize the semiconductor film; (STB) a step of irradiating a semiconductor film irradiated with the laser with a probe light; (STC) detecting, by a light detector, the transmitted light of the probe light passing through the substrate or the reflected light of the probe light reflected by the substrate; (STD) the step of extracting a portion of the laser light by a beam sampler disposed in the optical path of the laser light; (STE) a step of detecting the laser light extracted by the beam sampler with a laser detector; (STF) a step of moving the substrate to change the irradiation positions of the laser light and the probe light relative to the substrate; (STG) a step of setting process conditions for laser annealing according to detection results of the photodetector and the laser detector when the substrate is transported; as well as (STH) A step of performing laser annealing by irradiating the substrate with the laser light under the process conditions to crystallize the semiconductor film.

17. The laser annealing method according to claim 16, characterized in that: The melting time of the semiconductor film caused by the irradiation of the laser beam is calculated based on the detection result of the laser detector. When the melting time varies, the pulse waveform of the laser light is adjusted so that the pulse waveform of the laser light approaches a reference waveform.

18. The laser annealing method according to claim 17, characterized in that: irradiating the semiconductor film with the laser light synthesized from two pulse laser lights, The pulse waveform is adjusted by changing the intensity or optical path length of at least one of the two pulse laser beams.

19. A method for manufacturing a semiconductor device, characterized in that: include: (S1) a step of setting process conditions for laser annealing; (S2) a step of forming an amorphous semiconductor film on a substrate; as well as (S3) a step of irradiating the semiconductor film with laser light under the process conditions to perform laser annealing to crystallize the semiconductor film, (S1) The step of setting process conditions comprises: (sta) a step of irradiating a semiconductor film formed on a substrate with laser light to crystallize the semiconductor film; (stb) a step of irradiating the semiconductor film irradiated with the laser with a probe light; (stc) a step of detecting, by a light detector, the transmitted light of the probe light passing through the substrate or the reflected light of the probe light reflected by the substrate; (std) a step of extracting a portion of the laser light by a beam sampler disposed in an optical path of the laser light; (ste) a step of detecting the laser light extracted by the beam sampler with a laser detector; (stf) a step of moving the substrate to change the irradiation positions of the laser light and the probe light relative to the substrate; and (stg) A step of setting process conditions for laser annealing based on detection results of the light detector and the laser detector when the substrate is conveyed.

20. The method for manufacturing a semiconductor device according to claim 19, wherein: The melting time of the semiconductor film caused by the irradiation of the laser beam is calculated based on the detection result of the laser detector. When the melting time varies, the pulse waveform of the laser light is adjusted so that the pulse waveform of the laser light approaches a reference waveform.

21. The method for manufacturing a semiconductor device according to claim 20, wherein: irradiating the semiconductor film with the laser light synthesized from two pulse laser lights, The pulse waveform is adjusted by changing the intensity or optical path length of at least one of the two pulse laser beams.

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