Attachment control method of silicon wafer and silicon wafer

Abstract

The embodiment of the invention relates to the technical field of semiconductor manufacturing, and discloses a silicon wafer attaching control method and a silicon wafer. The method comprises the following steps: acquiring a preset wax coating amount on the ceramic plate; in the waxing process, waxing is conducted on the ceramic disc according to the preset waxing rotating speed; and when the silicon wafer is attached to the ceramic disc, controlling a reverse suction head to move the silicon wafer according to a preset reverse suction force. According to the scheme, by increasing the waxing amount, controlling the waxing rotating speed in the waxing process and adsorbing and moving the silicon wafer through reasonable reverse suction force, the problem of pits of the silicon wafer caused by various reasons such as particulate matters and large adsorption force can be solved, and the product yield of the silicon wafer is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a silicon wafer attachment control method and a silicon wafer. Background Art

[0002] In recent years, with the rapid development of Internet technology, the field of semiconductor manufacturing has developed rapidly. In the preparation process of silicon wafers, a polishing process is required to remove the tiny bumps and damage layers on the surface of the silicon wafer to ensure the thickness uniformity and surface smoothness of the silicon wafer and obtain good flatness.

[0003] Before polishing the semiconductor silicon wafer, the back of the silicon wafer must be attached to the ceramic disk. The current process is wax attachment. If there are large particles on the back of the silicon wafer during attachment, the vacuum treatment will cause protrusions on the surface of the silicon wafer after applying pressure. During the polishing process, the surface is processed flat, the protrusions are removed, and the silicon wafer becomes thinner at that position. After the silicon wafer is peeled off, the stress is restored, and pits (Dimples) will appear at the original protrusions. Especially for thin silicon wafers, Dimple is more likely to appear. At the same time, in the attachment process, the reverse suction head generates suction on the silicon wafer through vacuum pressure, sucking the silicon wafer up, turning 180 degrees, and descending, etc., and attaching the silicon wafer to the ceramic disk. Because thin silicon wafers are more easily deformed, it is easy to form a large Dimple in the center, and the diameter of the Dimple is basically the same as the diameter of the reverse suction head. Therefore, how to overcome the problem of insufficient flatness of silicon wafers and the easy occurrence of various Dimple problems during processing is a major technical problem in this field. Summary of the invention

[0004] One purpose of the present application is to provide a silicon wafer attachment control method and silicon wafer, at least to solve the problem of pits caused by particulate matter or excessive adsorption force during silicon wafer processing. The present application obtains a preset wax coating amount on a ceramic disk; during the wax coating process, wax is applied on the ceramic disk according to a preset wax coating speed; when the silicon wafer is attached to the ceramic disk, the reverse suction head is controlled to move the silicon wafer according to a preset reverse suction force. By adopting this solution, by increasing the wax coating amount, controlling the wax coating speed during the wax coating process, and adsorbing and moving the silicon wafer through a reasonable reverse suction force, the problem of pits on the silicon wafer caused by various reasons such as particulate matter and large adsorption force can be solved, thereby improving the product yield of the silicon wafer.

[0005] To achieve the above objectives, some embodiments of the present application provide the following aspects:

[0006] In a first aspect, some embodiments of the present application further provide a method for controlling the attachment of a silicon wafer, comprising:

[0007] Get the preset wax amount on the ceramic plate;

[0008] During the wax coating process, wax is coated on the ceramic disc according to a preset wax coating speed;

[0009] When the silicon wafer is attached to the ceramic plate, the reverse suction head is controlled to move the silicon wafer according to a preset reverse suction force.

[0010] In a second aspect, some embodiments of the present application further provide a silicon wafer, which is obtained by using the silicon wafer attachment control method as described above.

[0011] In a third aspect, some embodiments of the present application further provide an electronic device, comprising: one or more processors; and a memory storing computer program instructions, wherein the computer program instructions, when executed, cause the processor to perform the steps of the method described above.

[0012] In a fourth aspect, some embodiments of the present application further provide a computer-readable medium having computer program instructions stored thereon, wherein the computer program instructions can be executed by a processor to implement the method as described above.

[0013] In a fifth aspect, some embodiments of the present application further provide a computer program product, comprising a computer program / instruction, which implements the steps of the method described above when executed by a processor.

[0014] Compared with the related art, the solution provided in the embodiment of the present application obtains the preset wax coating amount on the ceramic disk; during the wax coating process, wax is coated on the ceramic disk according to the preset wax coating speed; when the silicon wafer is attached to the ceramic disk, the reverse suction head is controlled to move the silicon wafer according to the preset reverse suction force. By adopting this solution, by increasing the wax coating amount, controlling the wax coating speed during the wax coating process, and adsorbing and moving the silicon wafer through reasonable reverse suction force, the problem of pits on the silicon wafer caused by various reasons such as particulate matter and large adsorption force can be solved, and the product yield of the silicon wafer can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] One or more embodiments are exemplarily described by pictures in the corresponding drawings, and these exemplified descriptions do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings represent similar elements, and unless otherwise stated, the figures in the drawings do not constitute proportional limitations.

[0016] Figure 1 An exemplary flow chart of a silicon wafer attachment control method provided according to some embodiments of the present application;

[0017] Figure 2 A schematic diagram of Dimple formed by particles according to some embodiments of the present application;

[0018] Figure 3 A schematic diagram showing Dimple according to some embodiments of the present application;

[0019] Figure 4 A schematic diagram of a center Dimple provided according to some embodiments of the present application;

[0020] Figure 5 A schematic diagram showing a center Dimple provided according to some embodiments of the present application;

[0021] Figure 6 A schematic diagram of increasing the thickness of a wax film according to some embodiments of the present application;

[0022] Figure 7 A schematic diagram of the effects provided according to some embodiments of the present application;

[0023] Figure 8 An exemplary structural diagram of the electronic device is disclosed. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0025] First embodiment

[0026] The first embodiment of the present application relates to a method for controlling the attachment of a silicon wafer. Figure 1 As shown, the method may include the following steps:

[0027] Step S101, obtaining a preset wax coating amount on the ceramic plate;

[0028] The surface flatness requirements of ceramic discs are very high, and the flatness accuracy is usually controlled within a few microns, so as to ensure that the silicon wafer can be flatly attached to the ceramic disc, providing a good foundation for subsequent processing technology. For example, the flatness accuracy of some ceramic disc products can be controlled within 1.5 microns. The diameter, thickness and other dimensions of the ceramic disc need to be precisely controlled to meet the requirements of different semiconductor equipment and processes. At the same time, the shape and size of its surface must also match the silicon wafer to ensure that the silicon wafer can be accurately attached to the specified position of the ceramic disc. In order to improve the adhesion between the silicon wafer and the ceramic disc, the surface of the ceramic disc may be subjected to some special treatments, such as increasing the surface roughness, applying special coatings, etc. However, this treatment cannot affect the plane accuracy and other properties of the ceramic disc.

[0029] Ceramic discs are used to carry silicon wafers, which is the main function of ceramic discs. During the grinding, polishing, cleaning and other processes of silicon wafers, they provide a stable support platform for silicon wafers to ensure that the silicon wafers will not be displaced or shaken during the processing. At the same time, ceramic discs can also evenly transfer stress. In some processing processes, such as grinding and polishing, a certain amount of pressure and friction needs to be applied to the silicon wafer. Ceramic discs can evenly transfer these stresses, so that the processing force on each part of the silicon wafer is uniform, thereby improving the processing accuracy and surface quality of the silicon wafer. In addition, combined with the auxiliary heat dissipation characteristics of ceramic discs, in some high-temperature processes, ceramic discs can help silicon wafers dissipate heat, reduce the temperature of silicon wafers, and prevent silicon wafers from being damaged due to excessive temperature. At the same time, the high temperature resistance of the ceramic disc itself also ensures that it will not be affected during the heat dissipation process.

[0030] The preset wax application amount may be pre-set.

[0031] In this solution, optionally, the preset wax coating amount is determined according to the size of the silicon wafer and the ceramic disk.

[0032] Increase the amount of wax applied. Currently, the amount of wax applied for small-diameter silicon wafers is usually 0.7-0.8 ml / piece.

[0033] In this solution, optionally, the preset wax coating amount is 0.9-1.0 ml / piece.

[0034] Since the industry believes that too high a wax coating amount may lead to a thicker wax film in the center and thus cause center dimple, this solution increases the wax coating amount from 0.7-0.8 ml / piece to 0.9-1.0 ml / piece under the same flat process conditions, thereby increasing the wax film thickness while maintaining the uniformity of the wax film.

[0035] Through such a setting, the present solution can not only match the amount of wax coating with the size of the silicon wafer and the ceramic disk, but also meet certain thickness requirements. While ensuring flatness, the thickness of the wax film can be increased, so as to avoid the problem of Dimple after polishing due to the presence of particles on the back of the silicon wafer to a certain extent, thereby improving the flatness of the silicon wafer after polishing.

[0036] Step S102, during the wax coating process, wax is coated on the ceramic disc at a preset wax coating speed;

[0037] Before waxing, make sure the surface of the ceramic plate is clean, dry, and free of impurities such as oil and dust. You can use a mild detergent and a soft cloth to clean it, then rinse it with clean water and let it dry. During the waxing process, ensure that the wax layer is uniform to avoid partial over-thickness or over-thinness.

[0038] In this solution, a rotary wax coating method is adopted. In this case, it is necessary to determine the wax coating rotation speed.

[0039] In one embodiment, the preset wax coating rotation speed is 1200 rpm.

[0040] Change the wax coating speed. In the past, the wax coating speed was set at 2000rpm in order to make the wax film more uniform. Reducing the speed can appropriately increase the thickness of the wax film. After increasing the amount of wax coating, the speed can be reduced from 2000rpm to 1200rpm. On the premise that the thickness of the wax film is uniform, the thickness of the wax film can be further increased.

[0041] This scheme is arranged so that the wax film thickness can be better ensured by speed control on the basis of increasing the wax coating amount.

[0042] Step S103, when attaching the silicon wafer to the ceramic plate, controlling the reverse suction head to move the silicon wafer according to a preset reverse suction force.

[0043] Among them, the reverse suction head sucks up the silicon wafer by applying reverse suction force and controls the movement of the silicon wafer.

[0044] After the above two changes, the wax film thickness has been thickened to a certain extent, which can avoid the influence of particles on Dimple, but for thin silicon wafers, it is still easy to produce center Dimple.

[0045] During the attachment process, the inverted suction head uses vacuum pressure to generate suction on the silicon wafer, sucking the silicon wafer up, flipping 180 degrees, lowering, and pressurizing it to attach the silicon wafer to the ceramic plate. Since thin silicon wafers are more easily deformed, a large Dimple is easily formed in the center, and the diameter of the Dimple is basically the same as the diameter of the inverted suction head.

[0046] At present, the reverse suction force set for conventional thickness silicon wafers is usually above 100mmHg. If it is too small, the silicon wafer will not be able to be sucked and will fall off. But for thin silicon wafers, it also means lighter weight. By reducing the reverse suction force to a certain value, the silicon wafer can still be sucked, and the center dimple caused by the deformation of the thin wafer during attachment and reversal can be avoided.

[0047] In this solution, optionally, the preset reverse suction force is determined according to the weight of the silicon wafer.

[0048] Therefore, different preset reverse suction forces can be set according to the weight of the silicon wafer. The preset reverse suction force only needs to ensure that the silicon wafer of the weight can be adsorbed and no center Dimple will be generated.

[0049] Through such a setting, the present solution can set a more reasonable preset reverse suction force, which meets the needs of actual production, and at the same time will not produce a center Dimple, thereby improving the yield of the silicon wafer.

[0050] In one embodiment, the preset reverse suction force is 40-50 mmHg.

[0051] This solution reduces the reverse suction force from more than 100 mmHg to 40-50 mmHg to ensure that no central Dimple is produced.

[0052] Based on the above solutions, the thickness of the silicon wafer is 350 μm.

[0053] This solution can ensure the production yield of silicon wafers by adjusting the production parameters in response to a silicon wafer thickness of 350μm, while ensuring stable operation during the production process without the risk of silicon wafer falling off.

[0054] The technical solution provided in this embodiment obtains a preset wax coating amount on the ceramic disk; during the wax coating process, wax is coated on the ceramic disk at a preset wax coating speed; when the silicon wafer is attached to the ceramic disk, the reverse suction head is controlled to move the silicon wafer according to a preset reverse suction force. By adopting this solution, by increasing the wax coating amount, controlling the wax coating speed during the wax coating process, and adsorbing and moving the silicon wafer through a reasonable reverse suction force, the problem of pits on the silicon wafer caused by various reasons such as particulate matter and strong adsorption force can be solved, thereby improving the product yield of the silicon wafer.

[0055] The present application also provides a preferred embodiment.

[0056] Figure 2 Schematic diagram of Dimple formed by particles according to some embodiments of the present application. Figure 2 As shown, before polishing the semiconductor silicon wafer, the back of the silicon wafer must be attached to the ceramic plate. The process we adopt is wax attachment. If there are large particles on the back of the silicon wafer during attachment, the vacuum treatment and pressure will cause protrusions on the surface of the silicon wafer. During the polishing process, the surface is processed flat, the protrusions are removed, and the silicon wafer at that position becomes thinner. After the silicon wafer is peeled off, the stress is restored, and the original protrusions will appear dimple (pits). Therefore, the defects on the back are reflected on the front to form dimples. Because the silicon wafer will inevitably introduce certain particles on the back during the pre-polishing process, it is difficult to remove all large particles by washing before attachment, which easily leads to poor dimple during polishing.

[0057] Figure 3 Schematic diagram of Dimple provided according to some embodiments of the present application. Figure 3As shown in the figure, thin silicon wafers are more likely to have dimples. For 6-inch silicon wafers, 350μm thickness and below are considered thin wafers. This is mainly because in the production process of silicon wafers, such as the attachment process before polishing, thinner silicon wafers are more susceptible to mechanical damage and stress. The increased flexibility of thin silicon wafers also makes it easier for particles to cause local deformation during processing, forming dimples after polishing. Because the position of particles on the back of the silicon wafer is not fixed, the dimples formed by particles are usually not fixed in position and of different sizes.

[0058] Figure 4 It is a schematic diagram of a central Dimple provided according to some embodiments of the present application. Figure 5 Schematic diagram showing the center Dimple provided according to some embodiments of the present application. Figure 4 and Figure 5 As shown, in the attachment process, the inverted suction head generates suction on the silicon wafer through vacuum pressure, sucks the silicon wafer up, flips 180 degrees, descends, and pressurizes it to attach the silicon wafer to the ceramic plate. Since thin silicon wafers are more easily deformed, a large Dimple is easily formed in the center, and the diameter of the Dimple is basically the same as the diameter of the inverted suction head.

[0059] Dimple will affect the local flatness of silicon wafers and affect process control during downstream device manufacturing, thereby affecting the performance and yield of downstream products. The development of the 350μm thick Dimple Free silicon wafer attachment method further improves the surface quality of semiconductor silicon wafers to meet the requirements of more advanced process technology and improve the performance and efficiency of electronic products.

[0060] For 6-inch 350μm thick wafers, Dimple is more likely to occur because the silicon wafer itself is easy to deform, and usually two types of Dimple will appear at the same time. We need to improve the process to prepare Dimple Free 350μm thick silicon wafers.

[0061] Figure 6 Schematic diagram of increasing the thickness of wax film according to some embodiments of the present application. Figure 6 As shown, this patent starts with the wax coating process. By changing the wax coating process conditions, including the amount of wax coating, the speed of wax coating, the reverse suction, etc., on the one hand, the thickness of the wax film after attachment is thickened. Even if there are a certain number of large particles on the back, they can be covered in the wax layer, reducing the occurrence of Dimple after polishing. On the other hand, the reverse suction is reduced, thereby avoiding the formation of center Dimple.

[0062] The implementation of this solution mainly includes the following three steps:

[0063] Step 1: Increase the amount of wax applied. Currently, the amount of wax applied for small-diameter silicon wafers is usually 0.7-0.8 ml / wax. The industry believes that too high an amount of wax applied may result in a thicker wax film in the center, thus causing center dimple. However, we combined technical points 2 and 3 and conducted tests to confirm that under our process conditions, the amount of wax applied was increased from 0.7-0.8 ml / wax to 0.9-1.0 ml / wax, which increased the thickness of the wax film without deteriorating the uniformity of the wax film.

[0064] Step 2: Change the wax coating speed. In the past, we set the wax coating speed at 2000rpm in order to make the wax film more uniform. Reducing the speed can appropriately increase the thickness of the wax film. After increasing the amount of wax coating, we reduced the speed from 2000rpm to 1200rpm to further increase the thickness of the wax film.

[0065] Step 3: After the above two changes, the wax film thickness has been thickened to a certain extent, which can avoid the influence of particles on Dimple, but for thin silicon wafers, it is still easy to produce center Dimple. The reverse suction force we set for conventional thickness silicon wafers is usually above 100mmHg. If it is too small, it will cause the silicon wafer to fall off. But for thin silicon wafers, it also means lighter weight. We imagine reducing the reverse suction force to a certain value, which can still absorb the silicon wafer and avoid the center Dimple caused by the deformation of the thin wafer during attachment and reversal;

[0066] Reduce the amount of wax applied, increase the amount of wax applied from 0.7-0.8ml / piece to 0.9-1.0ml / piece, increase the thickness of the wax film, and at the same time, the uniformity of the wax film does not deteriorate;

[0067] After confirming that the uniformity has not deteriorated in step 1, proceed to step 2, changing the wax coating speed from 2000 rpm to 1200 rpm to further increase the thickness of the wax film;

[0068] The purpose of reducing the attachment reversal suction from more than 100mm / Hg to 40-50mm / Hg is to ensure that the center Dimple is not generated while thickening the wax film in the first two steps.

[0069] The verification data for this scheme are as follows:

[0070] After a large number of preliminary experiments, this plan changed the process conditions and selected four conditions for wax coating. Group 1 was the original process conditions, and groups 2, 3, and 4 were the changed process conditions. The wax film thickness and uniformity were confirmed by testing with a film thickness meter. It was found that: compared with group 2, group 1 only increased the amount of wax coating and kept the rotation speed unchanged, and the wax film thickness increased; compared with groups 2, 3, and 4, the wax film thickness increased as the rotation speed decreased; the wax film uniformity of the three groups after the changed conditions was better than that of the original process conditions, among which group 4 was the best; group 4 is the technical solution involved in this patent.

[0071] The specific data of the four groups are shown in the following table:

[0072]

[0073] Figure 7 Schematic diagram of the effects provided according to some embodiments of the present application. Figure 7 As shown, the technical solution involved in this patent is used to process a silicon wafer with a thickness of 350μm. The bird's-eye view of the silicon wafer detected by ADE shows that there is no Dimple with unfixed position and center Dimple in the silicon wafer surface.

[0074] In this scheme, 350μm thick Dimple Free silicon wafers were prepared by increasing the wax coating amount from 0.7-0.8ml / piece to 0.9-1.0ml / piece, reducing the wax coating speed from 2000rpm to 1200rpm, and reducing the attachment reversal suction from more than 100mm / Hg to 40-50mm / Hg.

[0075] Second embodiment

[0076] The second embodiment of the present application relates to a silicon wafer, which is obtained by using the silicon wafer attachment control method described in the above embodiments.

[0077] It can be understood that the silicon wafer protected by this solution has the beneficial effect of responding to the above-mentioned silicon wafer attachment control method, which will not be described in detail here.

[0078] In addition, some embodiments of the present application also provide an electronic device. The electronic device may be a digital computer in various forms, such as a laptop computer, a desktop computer, a workbench, a personal digital assistant, a server, a blade server, a mainframe computer, etc. The electronic device may also be a mobile device in various forms, such as a personal digital assistant, a cellular phone, a smart phone, a wearable device, and other similar computing devices.

[0079] The electronic device includes: one or more processors; and a memory storing computer program instructions, wherein when the computer program instructions are executed, the processor executes the steps of the method provided in any one or more of the above embodiments. Figure 8 An exemplary structural diagram of the electronic device is disclosed. Figure 8As shown, the electronic device includes: one or more processors 801, memory 802, and interfaces for connecting various components, including high-speed interfaces and low-speed interfaces. The various components are connected to each other using different buses and can be installed on a common mainboard or installed in other ways as needed. The processor can process instructions executed in the electronic device, including instructions stored in or on the memory to display graphical information of the GUI on an external input / output device (such as a display device coupled to the interface). In some other embodiments, if necessary, multiple processors and / or multiple buses can be used together with multiple memories and multiple memories. Similarly, multiple electronic devices can be connected, and each device provides some necessary operations (for example, as a server array, a group of blade servers, or a multi-processor system). Among them, the components shown in this article, their connections and relationships, and their functions are only used as examples, and are not intended to limit the implementation of the present application described and / or required herein.

[0080] The electronic device may further include: an input device 803 and an output device 804. The processor 801, the memory 802, the input device 803 and the output device 804 may be connected via a bus or other means. Figure 8 The example of connecting through bus is taken in the following.

[0081] The input device 803 can receive input digital or character information, and generate key signal input related to the user settings and function control of the electronic device, such as a touch screen, a keypad, a mouse, a track pad, a touch pad, an indicator bar, one or more mouse buttons, a trackball, a joystick and other input devices. The output device 804 may include a display device, an auxiliary lighting device (e.g., an LED) and a tactile feedback device (e.g., a vibration motor), etc. The display device may include, but is not limited to, a liquid crystal display (LCD), a light emitting diode (LED) display and a plasma display. In some embodiments, the display device may be a touch screen.

[0082] To provide interaction with a user, the electronic device may be a computer. The computer has: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or a trackball), through which the user can provide input to the computer. Other types of devices may also be used to provide interaction with the user; for example, the feedback provided to the user may be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user may be received in any form (including acoustic input, voice input, or tactile input).

[0083] In the embodiments of the present application, a computer program / instruction is stored on a computer-readable medium, and when the computer program / instruction is executed by a processor, the steps of the method provided by any one or more of the above embodiments are implemented. The computer-readable medium may be included in the electronic device described in the above embodiments; or it may exist independently without being assembled into the device. The above computer-readable medium carries one or more computer-readable instructions.

[0084] The memory 802 can be used as a non-transient computer-readable storage medium, which can be used to store non-transient software programs, non-transient computer executable programs and modules. The processor 801 executes various functional applications and data processing of the server by running the non-transient software programs, instructions and modules stored in the memory 802, so as to implement the program instructions / modules corresponding to the method provided by any one or more embodiments in the embodiments of the present application.

[0085] The memory 802 may include a program storage area and a data storage area, wherein the program storage area may store an operating system, an application required for at least one function; the data storage area may store data created according to the use of the electronic device, etc. In addition, the memory 802 may include a high-speed random access memory, and may also include a non-transient memory, such as at least one disk storage device, a flash memory device, or other non-transient solid-state storage devices. In some embodiments, the memory 802 may optionally include a memory remotely arranged relative to the processor 801, and these remote memories may be connected to the electronic device via a network. Examples of the above-mentioned network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof.

[0086] It should be noted that the computer-readable medium described in the present application may be a computer-readable signal medium or a computer-readable storage medium or any combination of the above two. The computer-readable medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared or semiconductor system, device or device, or any combination of the above. More specific examples of computer-readable storage media may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In the present application, a computer-readable medium may be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, device or device.

[0087] Computer readable media include permanent and non-permanent, removable and non-removable media, and can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, modules of programs or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, read-only compact disk (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape disk storage or other magnetic storage devices or any other non-transmission medium that can be used to store information that can be accessed by a computing device.

[0088] Computer program code for performing the operations of the present application may be written in one or more programming languages ​​or a combination thereof, including object-oriented programming languages, such as Java, Smalltalk, C++, and conventional procedural programming languages, such as "C" or similar programming languages. The program code may be executed entirely on the user's computer, partially on the user's computer, as a separate software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In cases involving a remote computer, the remote computer may be connected to the user's computer via any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer (e.g., via the Internet using an Internet service provider).

[0089] In the above-described embodiments, it can be implemented in whole or in part by software, hardware, firmware or any combination thereof. For example, it can be implemented by using an application specific integrated circuit (ASIC), a general-purpose computer or any other similar hardware device. In certain embodiments, the software program of the present application can be executed by a processor to implement the above steps or functions. Similarly, the software program of the present application (including relevant data structures) can be stored in a computer-readable recording medium, for example, a RAM memory, a magnetic or optical drive or a floppy disk and similar devices. In addition, some steps or functions of the present application can be implemented by hardware, for example, as a circuit that cooperates with a processor to perform each step or function.

[0090] The computer program product provided in the embodiment of the present application includes one or more computer programs / instructions, and when the computer program / instructions are executed by the processor, the process or function described in the embodiment of the present application is generated in whole or in part. The computer may be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. The computer instructions may be stored in a computer-readable storage medium, or transmitted from a computer-readable storage medium to another computer-readable storage medium, for example, the computer instructions may be transmitted from a website site, a computer, a server or a data center by wired (e.g., coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) mode to another website site, computer, server or data center. The computer-readable storage medium may be any available medium that a computer can access or a data storage device such as a server or a data center that includes one or more available media integrations. The available medium may be a magnetic medium, (e.g., a floppy disk, a hard disk, a tape), an optical medium (e.g., a DVD), or a semiconductor medium (e.g., a solid state disk (SSD)), etc.

[0091] The flow chart or block diagram in the accompanying drawings shows the possible architecture, function and operation of the equipment, method and computer program product according to various embodiments of the present application. In this regard, each box in the flow chart or block diagram can represent a module, a program segment or a part of a code, and the module, the program segment or a part of the code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flow chart, and the combination of the boxes in the block diagram and / or flow chart can be implemented with a dedicated system for hardware that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.

[0092] The scope of the present application is defined by the appended claims rather than the above description, and it is intended that all changes that fall within the meaning and scope of the equivalent elements of the claims are included in the present application. Any figure mark in the claims should not be regarded as limiting the claims involved. In addition, it is clear that the word "comprising" does not exclude other units or steps, and the singular does not exclude the plural. Multiple units or devices stated in the device claim may also be implemented by one unit or device through software or hardware. The words "first", "second", etc. are only used to distinguish the description, and do not indicate any particular order, nor can they be understood as indicating or implying relative importance.

[0093] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art can easily mention changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims, and the above embodiments should be regarded as exemplary and non-restrictive.

Claims

1. A method for controlling the attachment of a silicon wafer, characterized in that: The method comprises: Get the preset wax amount on the ceramic plate; During the wax coating process, wax is coated on the ceramic disc according to a preset wax coating speed; When the silicon wafer is attached to the ceramic plate, the reverse suction head is controlled to move the silicon wafer according to a preset reverse suction force.

2. The method according to claim 1, characterized in that The preset wax coating amount is determined according to the size of the silicon wafer and the ceramic disk.

3. The method according to claim 2, characterized in that The preset wax coating amount is 0.9-1.0 ml / piece.

4. The method according to claim 1, characterized in that The preset wax coating rotation speed is 1200 rpm.

5. The method according to claim 1, characterized in that The preset reverse suction force is determined according to the weight of the silicon wafer.

6. The method according to claim 5, characterized in that The preset reverse suction force is 40-50 mmHg.

7. The method according to any one of claims 1 to 6, characterized in that: The thickness of the silicon wafer is 350 μm.

8. A silicon wafer, characterized in that: The silicon wafer is obtained by using the silicon wafer attachment control method according to any one of claims 1 to 7.

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