Diamond sheet pretreatment method and device
By immersing hydrofluoric acid and instillation of DMSO on the silicon crystal surface, the problems of unclean cleaning and oxide film affecting nucleation are solved, more efficient cleaning and nucleation effects are achieved, and automated pretreatment is improved safety and efficiency.
Patent Information
- Application Number
- CN202411594831.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-10
- Publication Date
- 2025-02-14
- Estimated Expiration
- 2044-11-10
AI Technical Summary
The prior art water does not easily stay when cleaning silicon crystals, resulting in unclean cleaning and the oxide film on the surface of the silicon crystals affects the nucleation efficiency.
A diamond sheet pretreatment method is adopted, which includes washing away dust with pure water, soaking and rinsing of hydrofluoric acid, drying, instillation of DMSO and letting it stand, and finally drying the moisture on a centrifuge.
Corroding the oxide film by hydrofluoric acid improves water retention, achieving more thorough cleaning and nucleation effects, reducing the risk of artificial contact with hydrofluoric acid, and improving the efficiency of automated pretreatment.
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Figure CN119446983A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of silicon crystal coated diamond, and in particular relates to a diamond sheet pretreatment method and device. Background Art
[0002] Semiconductor coating technology is one of the core technologies in the modern microelectronics and optoelectronics industries. It involves depositing one or more layers of thin films on the surface of semiconductor materials to achieve specific physical, chemical or electrical functions. Diamond has extremely high thermal conductivity, much higher than silicon. Diamond coating on silicon crystals can significantly improve the overall thermal conductivity of the material, which is crucial for thermal management of high-performance electronic devices, especially for integrated circuits and microprocessors that generate a lot of heat. Before coating, it is particularly important to pretreat the silicon crystal.
[0003] At present, the existing CN113113290A has a method for preparing silicon carbide crystals, comprising: (1) selecting at least one substrate, and performing polishing and cleaning treatment on the at least one substrate; (2) under a first condition, introducing hydrogen to perform in-situ etching treatment on the at least one substrate; (3) under a second condition, introducing propane and hydrogen to perform carbonization treatment on the at least one substrate; (4) under a third condition, introducing silane, propane and hydrogen to grow silicon carbide crystals on the at least one substrate by vapor deposition, and obtaining at least one combined crystal including the substrate and the silicon carbide crystal; (5) placing the combined crystal in an environment with a temperature of 500 to 1200° C. and cooling it for at least 1 hour; (6) placing the combined crystal in a room temperature environment and cooling it; (7) heating the combined crystal to 50 to 100° C., and using an etching solution to ultrasonically clean the combined crystal at 50 to 100° C. for a first period of time, to obtain a silicon carbide crystal with a basal plane dislocation density of 120 to 2000 cm-2.
[0004] However, there are also problems: 1. When this method is used to clean silicon crystals, water is not easy to stay on the silicon crystals, and it is easy to not clean them thoroughly. 2. There will be an oxide film on the surface of the silicon crystals, which affects the nucleation efficiency. Summary of the invention
[0005] The present invention provides a diamond sheet pretreatment method to solve the problem of incomplete cleaning.
[0006] This solution provides a diamond sheet pretreatment method, comprising the following steps: Step S10: Wash away dust on the surface of the silicon crystal with pure water; Step S20: Soaking the silicon crystal in hydrofluoric acid, and then washing away the hydrofluoric acid with pure water; Step S30: drying the surface of the silicon crystal; Step S40: dripping DMSO onto the surface of the silicon crystal at 40-50 degrees and leaving it to stand for more than 1 hour; Step S50: Rinse the silicon crystal with pure water again; Step S60: Place the silicon crystals on a centrifuge to remove moisture, thereby completing pretreatment.
[0007] The beneficial effect of this solution is that: this method corrodes the oxide film on the silicon surface by immersing in hydrofluoric acid, making it easier for the silicon surface to nucleate. At the same time, hydrofluoric acid will perform pitting modification on the silicon surface, making it easier for moisture to stay on the silicon crystal surface, making it easier for the silicon crystal to be cleaned.
[0008] Furthermore, the immersion time of hydrofluoric acid in step S20 is 100-130 seconds. Under this time, hydrofluoric acid has the best effect. Too short time will result in the oxide film not being removed, and too long time will result in excessive damage to the silicon crystal surface.
[0009] Furthermore, the method further includes step S25: placing the silicon crystal in a methanol container for ultrasonic cleaning, and then placing the silicon crystal in a pure water container for ultrasonic cleaning. The residual hydrofluoric acid on the surface of the silicon crystal can be effectively removed by ultrasonic cleaning with methanol and pure water.
[0010] Furthermore, in step S40, when dripping, the silicon crystal is rotated at a set speed. When dripping, the rotation of the silicon crystal can make the nucleating agent disperse with the centrifugal force, so that the nucleating agent is more evenly distributed.
[0011] Since the existing pretreatment is all done manually, hydrofluoric acid is highly corrosive and volatile, and manual handling can easily cause personal injury.
[0012] The present solution also provides a diamond sheet pretreatment device, comprising: a sealed box: the sealed box is provided with an air inlet pipe, an air outlet pipe, a cleaning chamber, a hydrofluoric acid chamber, a methanol chamber and a pure water chamber, the cleaning chamber is provided with a nozzle, and the methanol chamber and the pure water chamber are both provided with a vibrator; a ball screw: the ball screw is matched with the sealed box; a moving part: the moving part is slidably connected to the ball screw; a main motor: the shaft of the main motor is fixedly connected to the ball screw, and the main motor is fixedly connected to the box; a telescopic mechanism: the telescopic mechanism is connected to the moving part The components are fixedly connected; a clamping mechanism: used for clamping the silicon crystal, and the clamping mechanism cooperates with the telescopic mechanism; an air pump: the air pump is connected to the air inlet pipe; a water pump: the water pump is connected to the nozzle; a dripping mechanism: the dripping mechanism is used for dripping the silicon crystal, and the dripping mechanism is located inside the closed box; a heating mechanism: the heating mechanism is used to maintain the temperature inside the box, and the heating mechanism is located inside the closed box; a controller: the main motor, the dripping mechanism, the heating mechanism, the water pump, the air pump, the vibrator and the telescopic mechanism are all electrically connected to the controller.
[0013] The principle of this scheme is that the operator fixes the silicon crystal on the clamping mechanism, closes the box, and then the controller controls the main motor to start, the main motor rotates the ball screw, so that the moving part moves, the moving part drives the telescopic mechanism to move, the telescopic mechanism drives the clamping mechanism to move, so that the clamping mechanism moves to the top of the cleaning chamber, and then the controller controls the telescopic mechanism to start, so that the clamping mechanism moves down until the silicon crystal is located in the cleaning chamber, and the controller controls the water pump to start, so that the nozzle sprays water to remove dust from the silicon crystal. Then the controller controls the main motor and the telescopic mechanism to make the silicon crystal enter the hydrofluoric acid chamber for immersion. After immersion, the controller controls the main motor and the telescopic mechanism again to move the silicon crystal to the cleaning chamber and rinse the silicon crystal again. After that, the controller moves the silicon crystal to the methanol chamber and the pure water chamber in turn, and then the controller starts the vibrator for ultrasonic cleaning. After cleaning, the controller starts the heating wire, and then the air pump passes nitrogen from the air inlet pipe for drying. After drying, the temperature of the heating wire is maintained at the set temperature, and the clamping mechanism puts the silicon crystal on the dripping mechanism for dripping. After standing for one hour, the pretreatment is completed.
[0014] The beneficial effects of this solution are: this solution realizes the automation of pretreatment, reduces the risk of personnel contacting hydrofluoric acid, and improves efficiency.
[0015] Furthermore, it also includes a first contact sensor, a second contact sensor and an electric flip cover, the electric flip cover is used to open and close the hydrofluoric acid chamber, the first contact sensor is electrically connected to the water pump, and the first contact sensor is located in the cleaning chamber, the first contact sensor and the second contact sensor are both matched with the clamping mechanism, the second contact sensor is electrically connected to the electric flip cover, and the second contact sensor is located in the hydrofluoric acid chamber, and the electric flip cover is rotatably connected to the hydrofluoric acid chamber.
[0016] When the controller controls the clamping mechanism to move into the cleaning chamber, the first contact sensor will contact the clamping piece, and the controller will control the water pump to spray water for water cleaning. When the controller controls the clamping mechanism to move into the hydrofluoric acid chamber, the clamping mechanism will touch the second contact sensor, causing the second contact sensor to control the electric flip cover to open, so that the silicon crystal can be immersed in hydrofluoric acid. When the controller controls the clamping mechanism to leave the hydrofluoric acid chamber, the second contact sensor is not triggered, and the electric flip cover will automatically close. Since hydrofluoric acid is volatile, in order to prevent other equipment from being corroded, this solution will only be opened when the silicon crystal is immersed in hydrofluoric acid, and it will be closed at other times, which increases the service life of the equipment.
[0017] Furthermore, the cleaning chamber is connected to the hydrofluoric acid chamber, and the cleaning chamber and the hydrofluoric acid chamber are arranged vertically, the cleaning chamber is located above the hydrofluoric acid chamber, and the cleaning chamber is provided with a drain port, which cooperates with the electric flip cover. Since the silicon crystal will also carry a part of the hydrofluoric acid when it goes out, it is still easy to cause corrosion to other equipment. When the clamping mechanism enters the cleaning chamber, it will contact the first contact sensor, so that the nozzle sprays water to remove dust. When the clamping mechanism continues to move down, the clamping mechanism passes over the first contact sensor at this time, the nozzle stops spraying water, and the waste water slides from the electric flip cover to the drain port for discharge. Then the clamping mechanism continues to move down and contacts the second contact sensor, so that the electric flip cover opens, and the clamping mechanism carries the silicon crystal into the hydrofluoric acid for immersion. After the immersion is completed, the clamping mechanism rises, so that the second contact sensor is not triggered, the electric flip cover is closed, and the clamping mechanism continues to rise, so that the first contact sensor is triggered, and the nozzle sprays water, so that the hydrofluoric acid on the silicon crystal is washed off, preventing the hydrofluoric acid from entering the closed box. At the same time, the cleaning chamber and the hydrofluoric acid chamber are arranged vertically, and the cleaning chamber is located above the hydrofluoric acid chamber so that the hydrofluoric acid will not escape into the closed box.
[0018] Furthermore, it also includes a gear and a rack. The clamping mechanism includes a clamping piece and a connecting rod. The clamping piece is used to clamp the silicon crystal. One end of the connecting rod is rotatably connected to the clamping piece, and the other end is fixedly connected to the telescopic mechanism. The gear is fixedly connected to the clamping piece, and the rack is fixedly connected to the cleaning chamber. The gear and the rack cooperate. Since the silicon crystal needs to remain horizontal during dripping, the clamping mechanism generally clamps the silicon crystal horizontally. However, when flushing with pure water, the silicon crystal in a horizontal state easily causes water to adhere to the surface of the silicon crystal, forming water marks. When the clamping mechanism of this mechanism enters the cleaning chamber, the gear will mesh with the rack inside the cleaning chamber, causing the gear to rotate. The rotation of the gear drives the clamping piece to rotate, and the clamping piece drives the silicon crystal to rotate. After reaching the set position, it rotates exactly 90 degrees to make the silicon crystal vertical. In this way, when the nozzle is spraying water, water will not remain on the surface of the silicon crystal.
[0019] Furthermore, the clamping mechanism includes a floating block, a nitrogen pipe, a pressure sensor, a spring and a clamping piece. The telescopic mechanism is provided with a groove. One end of the spring is fixedly connected to the telescopic rod of the telescopic mechanism, and the other end is fixedly connected to the floating block. The clamping piece is fixedly connected to the floating block. The nitrogen pipe is fixedly connected to the telescopic mechanism. The nitrogen pipe is connected to the air pump. There are multiple nitrogen pipes, and the nitrogen pipes are arranged in a circular array with the telescopic mechanism as the center. The pressure sensor is arranged in the groove, and the pressure sensor cooperates with the floating block. The pressure sensor is electrically connected to the controller.
[0020] When the clamping mechanism immerses the silicon crystal in hydrofluoric acid, the electric flip cover is in the open state at this time, and it is still very likely that the hydrofluoric acid will evaporate at this time. When the clamping mechanism immerses the silicon crystal in hydrofluoric acid, the nitrogen pipe will also come to the entrance of the hydrofluoric acid chamber. The floating block will rise due to the buoyancy of the liquid, but the silicon crystal is still immersed in the hydrofluoric acid, causing the floating block to move up. The floating block moves up and squeezes the pressure sensor. The pressure sensor is triggered, and the controller controls the air pump to pass nitrogen into the nitrogen pipe. The nitrogen pipe sprays out nitrogen continuously, so that a nitrogen layer is formed on the upper part of the hydrofluoric acid chamber, and the hydrofluoric acid cannot go out even if it evaporates. This mechanism solves the problem that hydrofluoric acid will not evaporate even if the electric flip cover is opened.
[0021] Furthermore, it also includes a timer, the timer is electrically connected to the controller, and the timer is electrically connected to the pressure sensor. In this scheme, the ethanol chamber and the pure water chamber do not need to be airtight, so when the mechanism is in the ethanol chamber and the pure water chamber, due to the vibrator, the float will go up and down, the float will press the pressure sensor for a while, and will not press it for a while, and when the float triggers the pressure sensor, the pressure sensor will power on the timer, and the timer will start timing. If the time is not reached, the pressure sensor is disconnected, and the timer will restart the timing without triggering the air pump to spray nitrogen. If the set time is reached, the timer sends an electrical signal to the controller, and the controller starts the air pump, so that the nitrogen pipe sprays, and the mechanism saves energy. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] Figure 1 The present invention is a structural diagram of a diamond sheet pretreatment device; Figure 2 This is a state diagram of a cleaning chamber of a diamond sheet pretreatment device during cleaning; Figure 3 This is a state diagram of a diamond sheet pretreatment device entering a hydrofluoric acid chamber.
[0023] The reference numerals in the figure drawings of the specification include: 1. sealed box; 2. air pump; 3. ball screw; 4. moving part; 5. first contact sensor; 6. nozzle; 7. electric flip cover; 8. drain outlet; 9. rack; 10. vibrator; 11. methanol chamber; 12. pure water chamber; 13. rotating motor; 14. air inlet pipe; 15. sponge; 16. air outlet pipe; 17. gear; 18. clamping part; 19. floating block; 20. groove; 21. telescopic mechanism; 22. nitrogen pipe; 23. spring; 24. silicon crystal; 25. drip tube; 26. turntable; 27. second contact sensor. DETAILED DESCRIPTION
[0024] This solution provides a diamond sheet pretreatment method, comprising the following steps: Step S10: washing away dust on the surface of the silicon crystal 24 with pure water; Step S20: Soak the silicon crystal 24 in hydrofluoric acid for 100-130 seconds. The hydrofluoric acid has the best effect under this time. Too short a time will result in the oxide film not being removed, and too long a time will result in excessive damage to the surface of the silicon crystal 24. Then use a large amount of pure water to rinse off the acid; Step S25: Place the silicon crystal 24 in a methanol container for ultrasonic cleaning, and then place it in a pure water container for ultrasonic cleaning. The residual hydrofluoric acid on the surface of the silicon crystal 24 can be effectively removed after ultrasonic cleaning with methanol and pure water.
[0025] Step S30: drying the surface of the silicon crystal 24; Step S40: drip DMSO onto the surface of the silicon crystal 24 at 40-50 degrees and let it stand for more than 1 hour. During the dripping, the silicon crystal 24 is rotated at a speed of 500-1000 RPM. During the dripping, the rotation of the silicon crystal 24 can make the nucleating agent disperse with the centrifugal force, so that the nucleating agent is more evenly distributed.
[0026] Step S50: Rinse the silicon crystal 24 with pure water again; Step S60: Place the silicon crystal 24 on a centrifuge, adjust the speed to 600 RPM, spin dry the water, and complete the pretreatment.
[0027] Step S70: Finally, put the plant into the oven for growth process. Hydrogen flow rate, methane flow rate, oxygen flow rate, plasma power, deposition temperature, cooling time. During the planting process, the temperature, gas, power density, etc. need to be debugged according to the needs. The planting time is generally 15-35 days. Shut down the planting process. After the diamond growth is completed, shut down the equipment.
[0028] The beneficial effect of the method is that the method corrodes the oxide film on the silicon surface by immersing in hydrofluoric acid, making it easier for the silicon surface to nucleate. At the same time, the hydrofluoric acid will perform pitting modification on the silicon surface, making it easier for moisture to stay on the surface of the silicon crystal 24, making it easier for the silicon crystal 24 to be cleaned.
[0029] Basically as attached Figure 1 As shown: Since the existing pretreatment is all done manually, hydrofluoric acid is highly corrosive and volatile, and manual handling can easily cause personal injury.
[0030] The present solution also provides a diamond sheet pretreatment device, comprising: a closed box 1, a main motor, a water pump, an air pump 2, a ball screw 3, a moving part 4, a first contact sensor 5, an electric flip cover 7, a rack 9, a rotating motor 13, a sponge 15, a gear 17, a clamping mechanism, a telescopic mechanism 21, a nitrogen pipe 22, a spring 23, a silicon crystal 24, a drip tube 25, a turntable 26 and a second contact sensor 27.
[0031] The clamping mechanism includes a floating block 19, a nitrogen pipe 22, a pressure sensor, a spring 23 and a clamping member 18. The telescopic mechanism 21 is provided with a groove 20. One end of the spring 23 is fixedly connected to the telescopic rod of the telescopic mechanism 21, and the other end is fixedly connected to the floating block 19. The clamping member 18 is fixedly connected to the floating block 19. The nitrogen pipe 22 is connected to the air pump 2. The pressure sensor is arranged in the groove 20. The floating block 19 will touch the pressure sensor when it rises due to the buoyancy of the liquid. When it is only subjected to gravity, the floating block 19 will not touch the pressure sensor. The pressure sensor is electrically connected to the controller. The pressure sensor is a capacitive touch switch. In this scheme, the ethanol chamber and the pure water chamber 12 do not need to be airtight, so when this mechanism is in the ethanol chamber and the pure water chamber 12, due to the vibrator 10, the floating block 19 will go up and down, and the floating block 19 will press the capacitive touch switch for a while and not press it for a while. The capacitive touch switch needs to be touched for a set time before it is triggered, so it will not be triggered in the ethanol chamber and the pure water chamber 12. The organization saves energy.
[0032] The sealed box 1 is provided with an air inlet pipe 14, an air outlet pipe 16, a cleaning chamber, a hydrofluoric acid chamber, a methanol chamber 11 and a pure water chamber 12. The cleaning chamber is provided with a nozzle 6. The methanol chamber 11 and the pure water chamber 12 are provided with a vibrator 10. The cleaning chamber and the hydrofluoric acid chamber are arranged vertically and connected, the cleaning chamber is located at the top, and the hydrofluoric acid chamber is located at the bottom. The cleaning chamber is provided with a drain port 8, and the drain port 8 is located above the electric flip cover 7. The electric flip cover 7 is a slope type, and the electric flip cover 7 will not touch the silicon crystal 24 when it rotates. When the electric flip cover 7 is in a closed state, the waste water will flow to the drain port 8 along the slope. The methanol chamber 11 and the pure water chamber 12 are fixed side by side at the bottom of the sealed box 1. The electric flip cover 7 is used to open and close the hydrofluoric acid chamber. The first contact sensor 5 is electrically connected to the water pump, and the first contact sensor 5 is located in the cleaning chamber. When the clamp 18 moves down, the clamp 18 can touch the first contact sensor 5 and the second contact sensor 27. The second contact sensor 27 is electrically connected to the electric flip cover 7, and the second contact sensor 27 is located in the hydrofluoric acid chamber. The electric flip cover 7 is rotatably connected to the hydrofluoric acid chamber. The gear 17 is fixedly connected to the clamp 18, the rack 9 is fixedly connected to the cleaning chamber, and the gear 17 is meshed with the rack 9. The air inlet pipe 14, the air outlet pipe 16, the drain port 8 and the nitrogen pipe 22 are all provided with a one-way valve, and the air outlet pipe 16 is provided with a sponge 15 for absorbing water vapor.
[0033] The ball screw 3 is rotatably connected to the sealed box 1; the moving part 4 is slidably connected to the ball screw 3; the shaft of the main motor is fixedly connected to the ball screw 3; the telescopic mechanism 21 is fixedly connected to the moving part 4; the air pump 2 is connected to the air inlet pipe 14, the water pump is connected to the nozzle 6, and the air pump 2 and the water pump are both fixed outside the sealed box 1. The heating wire is fixedly connected to the sealed box 1; the controller is electrically connected to the main motor, the dripping mechanism, the heating wire, the water pump, the air pump 2, the vibrator 10 and the telescopic mechanism 21.
[0034] The dripping mechanism is located inside the sealed box 1, and includes a turntable 26, a rotating motor 13 and a dripping tube 25. The dripping tube 25 is connected to the sealed box 1, the rotating motor 13 is fixedly connected to the sealed box 1, the shaft of the rotating motor 13 is fixedly connected to the turntable 26, the rotating motor 13 is a speed-adjustable motor, and the dripping tube 25 is located above the center of the turntable 26. A separate nozzle 6 is also provided next to the turntable 26, the separate nozzle 6 is aligned, and the separate nozzle 6 is connected to the water pump.
[0035] As attached Figure 1 , Figure 2 , Figure 3 As shown: The principle of this scheme is that the operator fixes the silicon crystal 24 on the clamping mechanism, closes the box, and then the controller controls the main motor to start, the main motor causes the ball screw to rotate, thereby causing the moving part 4 to move, the moving part 4 drives the telescopic mechanism 21 to move, the telescopic mechanism 21 drives the clamping mechanism to move, so that the clamping mechanism moves to the top of the cleaning chamber, and then the controller controls the telescopic mechanism 21 to start, so that the clamping mechanism moves downward, the gear 17 will engage with the rack 9 inside the cleaning chamber, so that the gear 17 rotates, the rotation of the gear 17 drives the clamping member 18 to rotate, the clamping member 18 drives the silicon crystal 24 to rotate, and after reaching the set position, it rotates exactly 90 degrees, so that the silicon crystal 24 is vertical, and at the same time the first contact sensor 5 will contact the clamping member 18, at this time the controller controls the water pump to spray water, so that the nozzle 6 sprays water for dust removal.
[0036] When the clamping member 18 continues to move downward, the clamping mechanism passes over the first contact sensor 5 at this time, the nozzle 6 stops spraying water, and the waste water slides from the electric flip cover 7 to the drain outlet 8 for discharge. Then the clamping mechanism continues to move downward and contacts the second contact sensor 27, so that the electric flip cover 7 opens. The clamping mechanism brings the silicon crystal 24 into the hydrofluoric acid for immersion. During immersion, the floating block 19 rises due to the buoyancy of the liquid, but the silicon crystal 24 is still immersed in the hydrofluoric acid, causing the floating block 19 to move upward. The upward movement of the floating block 19 will squeeze the capacitive touch switch, and the capacitive touch switch will be triggered after continuous contact for 10 seconds. The controller controls the air pump 2 to introduce nitrogen into the nitrogen pipe 22, and the nitrogen pipe 22 continuously sprays nitrogen, so that a nitrogen layer is formed above the hydrofluoric acid, and the hydrofluoric acid cannot go out even if it evaporates.
[0037] After the soaking is completed, the clamping mechanism rises, so that the second contact sensor 27 is not triggered, the electric flip cover 7 is closed, and the clamping mechanism continues to rise, so that the first contact sensor 5 is triggered, and the nozzle 6 sprays water, so that the hydrofluoric acid on the silicon crystal 24 is washed away, preventing the hydrofluoric acid from entering the sealed box 1. When the clamping member 18 reaches the top of the cleaning chamber, the capacitive touch switch is closed with a delay, and the nitrogen pipe 22 no longer sprays.
[0038] Afterwards, the controller moves the silicon crystal 24 to the methanol chamber 11 and the pure water chamber 12 in turn, and then starts the vibrator 10 for ultrasonic cleaning. Due to the vibrator 10, the float 19 will move up and down, and the float 19 will press the capacitive touch switch for a while and not press it for a while. The capacitive touch switch needs to be touched for a set time to be triggered, so it will not be triggered in the ethanol chamber and the pure water chamber 12.
[0039] After cleaning, the controller starts the heating wire, and then the air pump 2 introduces nitrogen from the air inlet pipe 14 for drying. After drying, the temperature of the heating wire is maintained at 40-50 degrees. The clamping part 18 places the silicon crystal 24 on the center of the turntable 26, and then the drip tube 25 drips. At the same time, the controller controls the rotating motor 13 to start and rotate slowly so that the nucleating agent is dispersed under the action of centrifugal force. After standing for one hour, the controller starts the separate nozzle 6 to complete the flushing of the silicon crystal 24, and then starts the rotating motor 13, adjusts the speed to the middle and lower gears, and drains the water to complete the pretreatment.
[0040] The beneficial effects of this solution are as follows: 1. This solution realizes the automation of pretreatment, reduces the risk of personnel contacting hydrofluoric acid, and improves efficiency. 2. This solution can effectively prevent the volatilization of hydrofluoric acid and increase the service life of the equipment. 3. When flushing, vertical flushing can be performed, so that when the nozzle 6 sprays water, water will not remain on the surface of the silicon crystal 24.
[0041] The above are only embodiments of the present invention, and the common knowledge of the known specific structure and characteristics in the scheme is not described in detail here. It should be pointed out that for those skilled in the art, several modifications and improvements can be made without departing from the structure of the present invention, which should also be regarded as the protection scope of the present invention, and these will not affect the effect of the implementation of the present invention and the practicality of the patent. The scope of protection required by this application shall be based on the content of its claims, and the specific implementation methods and other records in the specification can be used to interpret the content of the claims.
Claims
1. A diamond sheet pretreatment method, characterized in that: The following steps are involved: step S10: using pure water to wash away dust on the surface of the silicon crystal (24); Step S20: Soaking the silicon crystal (24) in hydrofluoric acid, and then washing away the hydrofluoric acid with pure water; Step S30: drying the surface of the silicon crystal (24); Step S40: dripping DMSO onto the surface of the silicon crystal (24) at a set temperature and leaving it to stand for more than 1 hour; Step S50: Rinse the silicon crystal (24) with pure water again; Step S60: placing the silicon crystal (24) on a centrifuge to remove water, thereby completing the pretreatment.
2. A diamond sheet pretreatment method according to claim 1, characterized in that: The immersion time of the hydrofluoric acid in step S20 is 100-130 seconds.
3. A diamond sheet pretreatment method according to claim 1, characterized in that: The method further includes step S25: placing the silicon crystal (24) substrate in a methanol container for ultrasonic cleaning, and then placing the substrate in a pure water container for ultrasonic cleaning.
4. A diamond sheet pretreatment method according to claim 1, characterized in that: During the dripping in step S40, the silicon crystal (24) is caused to rotate at a set rotation speed.
5. A diamond sheet pretreatment device, characterized in that: include: A sealed box (1): the sealed box (1) is provided with an air inlet pipe (14), an air outlet pipe (16), a cleaning chamber, a hydrofluoric acid chamber, a methanol chamber (11) and a pure water chamber (12); the cleaning chamber is provided with a nozzle (6); and the methanol chamber (11) and the pure water chamber (12) are both provided with a vibrator (10); Ball screw (3): the ball screw (3) is rotatably connected to the sealed box (1); Moving member (4): the moving member (4) cooperates with the ball screw (3); Main motor: the shaft of the main motor is fixedly connected to the ball screw (3), and the main motor is fixedly connected to the box (1); Telescopic mechanism (21): the telescopic mechanism (21) is fixedly connected to the moving part (4); A clamping mechanism: used for clamping the silicon crystal (24), the clamping mechanism being matched with the telescopic mechanism (21); Air pump (2): the air pump (2) is connected to the air inlet pipe (14); Water pump: the water pump is connected to the nozzle (6); Injection mechanism: The injection mechanism is used for injecting silicon crystals. The injection mechanism is located inside the sealed box (1). Heating mechanism: the heating mechanism is used to maintain the temperature inside the box (1), and the heating mechanism is located inside the sealed box (1); Controller: The main motor, the dripping mechanism, the water pump, the heating mechanism, the air pump (2), the vibrator (10) and the telescopic mechanism (21) are all electrically connected to the controller.
6. A diamond sheet pretreatment device according to claim 5, characterized in that: The cleaning device further comprises a first contact sensor (5), a second contact sensor (27) and an electric flip cover (7), wherein the electric flip cover (7) is used to open and close the hydrofluoric acid chamber, the first contact sensor (5) is electrically connected to the water pump, and the first contact sensor (5) is located in the cleaning chamber, the first contact sensor (5) and the second contact sensor (27) are both matched with the clamping mechanism, the second contact sensor (27) is electrically connected to the electric flip cover (7), and the second contact sensor (27) is located in the hydrofluoric acid chamber, and the electric flip cover (7) is rotatably connected to the hydrofluoric acid chamber.
7. A diamond sheet pretreatment device according to claim 6, characterized in that: The cleaning chamber is communicated with the hydrofluoric acid chamber, and the cleaning chamber and the hydrofluoric acid chamber are arranged vertically. The cleaning chamber is located above the hydrofluoric acid chamber. The cleaning chamber is provided with a drainage port (8), and the drainage port (8) cooperates with the electric flip cover (7).
8. A diamond sheet pretreatment device according to claim 6, characterized in that: It also includes a gear (17) and a rack (9), the clamping mechanism includes a clamping piece (18) and a connecting rod, the clamping piece (18) is used to clamp the silicon crystal (24), one end of the connecting rod is rotatably connected to the clamping piece (18), and the other end is fixedly connected to the telescopic mechanism (21), the gear (17) is fixedly connected to the clamping piece (18), the rack (9) is fixedly connected to the cleaning chamber, and the gear (17) and the rack (9) cooperate with each other.
9. A diamond sheet pretreatment device according to claim 6, characterized in that: The clamping mechanism comprises a floating block (19), a nitrogen pipe (22), a pressure sensor, a spring (23) and a clamping piece (18); the telescopic mechanism (21) is provided with a groove (20); one end of the spring (23) is fixedly connected to the telescopic rod of the telescopic mechanism (21), and the other end is fixedly connected to the floating block (19); the clamping piece (18) is fixedly connected to the floating block (19); the nitrogen pipe (22) is fixedly connected to the telescopic mechanism (21); the nitrogen pipe (22) is communicated with the air pump (2); a plurality of nitrogen pipes (22) are provided, and the nitrogen pipes (22) are arranged in a circular array with the telescopic mechanism (21) as the center; the pressure sensor is arranged in the groove (20), and the pressure sensor cooperates with the floating block (19); and the pressure sensor is electrically connected to the controller.
10. A diamond sheet pretreatment device according to claim 9, characterized in that: It also includes a timer, which is electrically connected to the controller and the timer is electrically connected to the pressure sensor.
Citation Information
Patent Citations
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