Chamfering device and chamfering method

Abstract

The invention relates to a chamfering device and a chamfering method, the chamfering device is used for chamfering a silicon wafer, and the chamfering device comprises a first grinding wheel, a second grinding wheel, a first control structure and a second control structure; the first control structure is used for controlling the first grinding wheel and the second grinding wheel to rotate in a first plane; the second control structure is used for controlling the silicon wafer to rotate in a second plane; the first control structure and the second control structure are matched to chamfer the silicon wafer; the first plane is parallel to the second plane, and the second plane is parallel to the surface of the silicon wafer. In the chamfering machining process, the first grinding wheel, the second grinding wheel and the silicon wafer rotate in parallel planes, so that grinding marks on the silicon wafer are parallel to the surface of the silicon wafer, the marks can be removed in the subsequent polishing process, and the roughness of the edge of the silicon wafer is improved.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor product manufacturing, and in particular to a chamfering processing device and a chamfering processing method. Background Art

[0002] Wafers are the most basic materials in the semiconductor field. Various circuit element structures can be processed on them to become integrated circuit products with specific electrical functions. In the wafer production process, the edge processing of silicon wafers is very important. Small cracks or cracks on the edges will generate mechanical stress on the silicon wafer, which will cause dislocations, resulting in the accumulation and shedding of harmful contaminants. In addition, edge dislocations will also cause edge dislocation growth during high-temperature processing or surface epitaxy. Excellent chamfering technology can make the edge of the silicon wafer obtain a smooth radius circumference, minimizing the above effects.

[0003] Figure 1 This is the chamfer grinding method commonly used for 12-inch silicon wafers.

[0004] Two groups of identical grinding wheels 10 are used, and the grinding wheels 10 are circular.

[0005] The rotation direction of the grinding wheel 10 is vertical;

[0006] The rotation direction of the silicon wafer 100 is horizontal.

[0007] The two sets of grinding wheels 10 move up and down respectively, following specific tracks to create specific edge shapes.

[0008] In this case, since the rotation direction of the grinding wheel 10 is perpendicular to the rotation direction of the silicon wafer 100 , a vertical grinding wheel mark appears on the edge of the silicon wafer 100 .

[0009] During the subsequent edge polishing process, multiple grinding pads are set on the edge of the silicon wafer, and the silicon wafer and the grinding pads rotate at high speed in the same direction to polish the edge of the silicon wafer. That is, the rotation direction of the grinding pad is horizontal and parallel to the rotation direction of the silicon wafer.

[0010] However, the vertical chamfer wheel mark is difficult to be completely removed by this edge polishing process, which eventually results in Figure 2 The edge morphology shown has extremely poor edge roughness. Summary of the invention

[0011] In order to solve the above technical problems, the present invention provides a chamfering processing device and a chamfering processing method.

[0012] In order to achieve the above-mentioned object, the technical solution adopted in the embodiment of the present invention is: a chamfering processing device for chamfering a silicon wafer, comprising a first grinding wheel, a second grinding wheel, and a first control structure and a second control structure;

[0013] The first control structure is used to control the first grinding wheel and the second grinding wheel to rotate in a first plane;

[0014] The second control structure is used to control the silicon wafer to rotate in a second plane;

[0015] The first control structure and the second control structure cooperate to chamfer the silicon wafer;

[0016] The first plane and the second plane are parallel, and the second plane is parallel to the surface of the silicon wafer.

[0017] Optionally, the silicon wafer comprises a first surface and a second surface opposite to each other, a first corner is formed between the first surface and a side surface of the silicon wafer, and a second corner is formed between the second surface and the side surface of the silicon wafer;

[0018] The first control structure is used to control the first grinding wheel and the second grinding wheel to switch between a first state and a second state;

[0019] In the first state, the outer peripheral surface of the first grinding wheel is in surface contact with the side surface of the silicon wafer, the outer peripheral surface of the second grinding wheel is in surface contact with the side surface of the silicon wafer, and the first grinding wheel and the second grinding wheel cooperate to grind the side surface of the silicon wafer as a whole;

[0020] In the second state, the first grinding wheel is tilted at a first preset angle to grind the first corner of the silicon wafer, and the second grinding wheel is tilted at a second preset angle to grind the second corner of the silicon wafer.

[0021] Optionally, the first preset angle is 45-90 degrees, and the second preset angle is 45-90 degrees.

[0022] Optionally, the outer peripheral surface of the first grinding wheel is a conical surface, and the outer peripheral surface of the second grinding wheel is a conical surface.

[0023] Optionally, when chamfering a silicon wafer, the first grinding wheel and the second grinding wheel are arranged in a mirror image.

[0024] Optionally, the first control structure is used to control the first grinding wheel and the second grinding wheel to rotate at a first preset speed;

[0025] The second control structure is used to control the silicon wafer to rotate at a second preset speed;

[0026] The rotation direction of the first grinding wheel, the rotation direction of the second grinding wheel and the rotation direction of the silicon wafer are the same, and the first preset speed and the second preset speed are different.

[0027] Optionally, the rotation direction of the first grinding wheel and the rotation direction of the second grinding wheel are opposite to the rotation direction of the silicon wafer.

[0028] Optionally, the chamfering processing device further comprises a nozzle for spraying grinding fluid toward the first grinding wheel and the second grinding wheel.

[0029] The embodiment of the present invention further provides a chamfering method, which is used to chamfer a silicon wafer using the chamfering device described above.

[0030] The silicon wafer comprises a first surface and a second surface opposite to each other, a first corner is formed between the first surface and the side surface of the silicon wafer, and a second corner is formed between the second surface and the side surface of the silicon wafer;

[0031] The chamfering method comprises:

[0032] Controlling the first grinding wheel and the second grinding wheel to grind the side surface of the silicon wafer until the diameter of the silicon wafer reaches a preset diameter;

[0033] Controlling the first grinding wheel to tilt at a first preset angle to perform chamfering on the first edge corner;

[0034] Controlling the second grinding wheel to tilt at a second preset angle to perform chamfering on the second edge corner;

[0035] Wherein, the first grinding wheel and the second grinding wheel both rotate in a first plane, and the silicon wafer rotates in a second plane and moves relative to the first grinding wheel and the second grinding wheel;

[0036] The first plane and the second plane are parallel, and the second plane is parallel to the surface of the silicon wafer.

[0037] The beneficial effect of the present invention is that the chamfering of the silicon wafer is achieved by cooperating with the first grinding wheel and the second grinding wheel, and during the chamfering process, the first grinding wheel, the second grinding wheel and the silicon wafer rotate in planes parallel to each other, so that the grinding marks on the silicon wafer are parallel to the surface of the silicon wafer, so that these marks can be removed in the subsequent polishing process, thereby improving the roughness of the edge of the silicon wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 A schematic diagram showing a silicon wafer grinding state in the related art;

[0039] Figure 2 A schematic diagram showing the morphology of a silicon wafer after polishing in the related art;

[0040] Figure 3 A schematic diagram showing a chamfering state of a chamfering processing device according to an embodiment of the present invention;

[0041] Figure 4 A schematic diagram showing a chamfering state of a chamfering processing device according to an embodiment of the present invention;

[0042] Figure 5 A schematic diagram showing a state in which the first grinding wheel is grinding in an embodiment of the present invention;

[0043] Figure 6 A schematic diagram showing a state in which the first grinding wheel is grinding in an embodiment of the present invention;

[0044] Figure 7 A schematic diagram showing a state in which the first grinding wheel is grinding in an embodiment of the present invention;

[0045] Figure 8 A schematic diagram showing a state in which the second grinding wheel is grinding in an embodiment of the present invention;

[0046] Fig. 9 A schematic diagram showing a state in which the second grinding wheel is grinding in an embodiment of the present invention;

[0047] Fig.10 A schematic diagram showing a state where the second grinding wheel is performing grinding in an embodiment of the present invention. DETAILED DESCRIPTION

[0048] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0049] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, similar words such as "one", "one" or "the" do not indicate quantity restrictions, but indicate that there is at least one. Similar words such as "include" or "comprise" mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Similar words such as "connect" or "connected" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0050] The features such as "parallel", "perpendicular", and "same" used in the embodiments of the present disclosure include the features such as "parallel", "perpendicular", and "same" in a strict sense, as well as the cases where "approximately parallel", "approximately perpendicular", "approximately the same", etc. include certain tolerances, taking into account the tolerances associated with the measurement of specific quantities (e.g., the limitations of the measurement system), and represent the acceptable deviation range for a specific value determined by ordinary technicians in the field. For example, "approximately" can mean within one or more standard deviations, or within 3% or 5% of the value.

[0051] refer to Figure 3-Figure 10 , this embodiment provides a chamfering processing device for chamfering a silicon wafer 100, comprising a first grinding wheel 11, a second grinding wheel 12, and a first control structure and a second control structure;

[0052] The first control structure is used to control the first grinding wheel 11 and the second grinding wheel 12 to rotate in a first plane;

[0053] The second control structure is used to control the silicon wafer 100 to rotate in a second plane;

[0054] The first control structure and the second control structure cooperate to chamfer the silicon wafer 100;

[0055] The first plane and the second plane are parallel to each other, and the second plane is parallel to the surface of the silicon wafer 100 .

[0056] By adopting the above scheme, the first grinding wheel 11 and the second grinding wheel 12 both rotate in a first plane, and the silicon wafer 100 rotates in a second plane parallel to the first plane, and the second plane is parallel to the surface of the silicon wafer 100, that is, if the silicon wafer 100 is placed horizontally, the first grinding wheel 11 and the stacked grinding wheel both rotate in the horizontal direction, and the silicon wafer 100 moves in the horizontal direction, so that the direction of the grinding wheel mark on the edge of the silicon wafer 100 is consistent with the rotation direction of the silicon wafer 100. In the subsequent edge polishing process, the grinding pad and the silicon wafer 100 also rotate in a direction parallel to the surface of the silicon wafer 100, that is, if the silicon wafer 100 is placed horizontally, the grinding pad and the silicon wafer 100 both rotate in a horizontal plane, so that the grinding wheel mark generated in the chamfering process can be easily removed in the polishing process, thereby improving the edge roughness of the silicon wafer 100.

[0057] It should be noted that when the silicon wafer 100 is chamfered, the first grinding wheel 11 , the second grinding wheel 12 and the silicon wafer 100 perform relative rotational motion to achieve the chamfering of the silicon wafer 100 .

[0058] In order to achieve relative rotational motion between the first grinding wheel 11, the second grinding wheel 12 and the silicon wafer 100, the first grinding wheel 11, the second grinding wheel 12 and the silicon wafer 100 may have the same rotation direction but different rotation speeds. Alternatively, the first grinding wheel 11, the second grinding wheel 12 and the silicon wafer 100 may have opposite rotation directions, in which case the rotation speeds of the first grinding wheel 11, the second grinding wheel 12 and the silicon wafer 100 are not limited.

[0059] In an exemplary embodiment, the silicon wafer 100 includes a first surface and a second surface opposite to each other, a first corner is formed between the first surface and a side surface of the silicon wafer 100, and a second corner is formed between the second surface and the side surface of the silicon wafer 100;

[0060] The first control structure is used to control the first grinding wheel 11 and the second grinding wheel 12 to switch between a first state and a second state;

[0061] In the first state, the outer peripheral surface of the first grinding wheel 11 is in surface contact with the side surface of the silicon wafer 100, and the outer peripheral surface of the second grinding wheel 12 is in surface contact with the side surface of the silicon wafer 100. The first grinding wheel 11 and the second grinding wheel 12 cooperate to grind the side surface of the silicon wafer 100 as a whole. Figure 5 and Figure 8 ;

[0062] In the second state, the first grinding wheel 11 is tilted at a first preset angle to grind the first corner of the silicon wafer 100, and the second grinding wheel 12 is tilted at a second preset angle to grind the second corner of the silicon wafer 100. Figure 6 , Figure 7 , Fig. 9 and Fig.10 .

[0063] During the chamfering process of the silicon wafer 100, it is necessary to first perform rough grinding on the silicon wafer 100 so that the diameter of the silicon wafer 100 reaches a preset diameter, that is, under the control of the first control structure, control the first grinding wheel 11 and the second grinding wheel 12 to perform rough grinding on the silicon wafer 100 so that the silicon wafer 100 reaches a preset size.

[0064] In the first state, the contact between the first grinding wheel 11 and the side surface of the silicon wafer 100 is surface contact, and in some embodiments, in the axial direction of the silicon wafer 100, the thickness of the first grinding wheel 11 is greater than or equal to the thickness of the silicon wafer 100, so that the side surface of the silicon wafer 100 can be ground without moving the first grinding wheel 11 in the axial direction of the silicon wafer 100.

[0065] Similarly, the contact between the second grinding wheel 12 and the side of the silicon wafer 100 is surface contact, and in some embodiments, in the axial direction of the silicon wafer 100, the thickness of the second grinding wheel 12 is greater than or equal to the thickness of the silicon wafer 100, so that the side of the silicon wafer 100 can be ground without moving the first grinding wheel 11 in the axial direction of the silicon wafer 100.

[0066] It should be noted that when grinding the side of the silicon wafer 100, the side of the silicon wafer 100 can be ground only by the first grinding wheel 11, or only by the second grinding wheel 12. In some implementations of this embodiment, the side of the silicon wafer 100 is ground by the first grinding wheel 11 and the second grinding wheel 12 together, thereby improving the grinding efficiency of the silicon wafer 100.

[0067] After the side grinding of the silicon wafer 100 is completed, the first control structure controls the first grinding wheel 11 and the second grinding wheel 12 to switch from the first state to the second state, that is, the first grinding wheel 11 is controlled to tilt at a first preset angle to grind the first corner of the silicon wafer 100, and the second grinding wheel 12 is controlled to tilt at a second preset angle to grind the second corner of the silicon wafer 100, thereby completing the processing of the preset morphology of the silicon wafer 100. Figure 6 Schematic diagram showing the initial state of the first grinding wheel performing chamfering, Figure 7 Schematic diagram showing the state of the first grinding wheel after chamfering for a period of time. Fig. 9 Schematic diagram showing the initial state of the second grinding wheel chamfering. Fig.10 Schematic diagram showing the state of the second grinding wheel after chamfering for a period of time.

[0068] It should be noted that, in the second state, the first grinding wheel 11 and the second grinding wheel 12 may move synchronously, and the grinding speed and grinding time may be the same to improve the grinding efficiency.

[0069] It should be noted that, in this embodiment, the first grinding wheel 11 and the second grinding wheel 12 are independently controlled, so that the desired morphology of the silicon wafer can be formed more flexibly.

[0070] In an exemplary embodiment, the first grinding wheel 11 and the second grinding wheel 12 have the same structure. In the second state, the first grinding wheel 11 and the second grinding wheel 12 have the same inclination angle, so that the chamfer formed by the first corner and the chamfer formed by the second corner can be symmetrically arranged relative to the radial center line of the silicon wafer 100, but this is not limited to it.

[0071] In an exemplary embodiment, the first preset angle is 45-90 degrees, and the second preset angle is 45-90 degrees.

[0072] In an exemplary embodiment, the outer peripheral surface of the first grinding wheel 11 is a conical surface, and the outer peripheral surface of the second grinding wheel 12 is a conical surface.

[0073] The first grinding wheel 11 having a conical surface is advantageous for chamfering the first corner, and the second grinding wheel 12 having a conical surface is advantageous for chamfering the second corner.

[0074] In an exemplary embodiment, when chamfering the silicon wafer 100 , the first grinding wheel 11 and the second grinding wheel 12 are arranged in a mirror image.

[0075] By adopting the above scheme, in the second state, the distance between the first grinding wheel 11 and the second grinding wheel 12 can be reduced without interfering with each other, thereby facilitating improving the stability of edge grinding of the silicon wafer 100 .

[0076] In an exemplary embodiment, the first control structure is used to control the first grinding wheel 11 and the second grinding wheel 12 to rotate at a first preset speed;

[0077] The second control structure is used to control the silicon wafer 100 to rotate at a second preset speed;

[0078] The rotation direction of the first grinding wheel 11 , the rotation direction of the second grinding wheel 12 and the rotation direction of the silicon wafer 100 are the same, and the first preset speed and the second preset speed are different.

[0079] When the first grinding wheel 11 and the silicon wafer 100 rotate in the same direction, if the first grinding wheel 11 and the silicon wafer 100 rotate at the same speed, the first grinding wheel 11 and the silicon wafer 100 will not move relative to each other, and the silicon wafer 100 cannot be ground. The first grinding wheel 11 and the silicon wafer 100 rotate at different speeds, so that the first grinding wheel 11 and the silicon wafer 100 can move relative to each other, and the silicon wafer 100 can be ground. Similarly, when the second grinding wheel 12 and the silicon wafer 100 rotate in the same direction, if the second grinding wheel 12 and the silicon wafer 100 rotate at the same speed, the second grinding wheel 12 and the silicon wafer 100 will not move relative to each other, and the silicon wafer 100 cannot be ground. The second grinding wheel 12 and the silicon wafer 100 rotate at different speeds, so that the second grinding wheel 12 and the silicon wafer 100 can move relative to each other, and the silicon wafer 100 can be ground.

[0080] It should be noted that the rotation speeds of the first grinding wheel 11 and the second grinding wheel 12 can be the same, or the rotation speeds of the first grinding wheel 11 and the second grinding wheel 12 can be different, as long as the rotation speed of the first grinding wheel 11 is different from the rotation speed of the silicon wafer 100, and the rotation speed of the second grinding wheel 12 is different from the rotation speed of the silicon wafer 100.

[0081] In an exemplary embodiment, the rotation direction of the first grinding wheel 11 and the rotation direction of the second grinding wheel 12 are opposite to the rotation direction of the silicon wafer 100 .

[0082] The first grinding wheel 11 rotates in the opposite direction to the silicon wafer 100 , and the second grinding wheel 12 rotates in the opposite direction to the silicon wafer 100 . The silicon wafer 100 is ground by the first grinding wheel 11 and the second grinding wheel 12 .

[0083] In an exemplary embodiment, the chamfering device further includes a nozzle for spraying grinding fluid toward the first grinding wheel 11 and the second grinding wheel 12 .

[0084] The nozzle is used to spray the grinding fluid to cool the first grinding wheel 11 and the second grinding wheel 12 and reduce the wear of the first grinding wheel 11 and the second grinding wheel 12 .

[0085] In an exemplary embodiment, the chamfering processing apparatus may further include a fixing device, and the fixing device is used to fix the silicon wafer 100 .

[0086] In an exemplary embodiment, the fixing device may be a suction cup that absorbs the silicon wafer 100 by contacting the surface of the silicon wafer 100. In this way, compared with fixing the silicon wafer 100 by clamping, for example, damage to the surface of the silicon wafer 100 can be avoided.

[0087] In addition, although not shown in the drawings, the chamfering processing apparatus may further include a driver for rotating the fixing device, thereby rotating the silicon wafer 100 together with the fixing device, so that the entire periphery of the silicon wafer 100 can be chamfered.

[0088] The embodiment of the present invention further provides a chamfering method, which is used to chamfer the silicon wafer 100 using the above-mentioned chamfering device. The chamfering method includes:

[0089] Controlling the first grinding wheel 11 and the second grinding wheel 12 to rotate within a first plane;

[0090] Controlling the silicon wafer 100 to rotate in the second plane and to move relative to the first grinding wheel 11 and the second grinding wheel 12;

[0091] The first plane and the second plane are parallel to each other, and the second plane is parallel to the surface of the silicon wafer 100 .

[0092] In an exemplary embodiment, the silicon wafer 100 includes a first surface and a second surface opposite to each other, a first corner is formed between the first surface and a side surface of the silicon wafer 100, and a second corner is formed between the second surface and the side surface of the silicon wafer 100;

[0093] The chamfering method comprises:

[0094] Controlling the first grinding wheel 11 and the second grinding wheel 12 to grind the side surface of the silicon wafer 100 until the diameter of the silicon wafer 100 reaches a preset diameter;

[0095] When grinding the side of the silicon wafer 100, the first grinding wheel 11 and the silicon wafer 100 are in surface contact, and the second grinding wheel 12 and the silicon wafer 100 are in surface contact. In the process of grinding the side of the silicon wafer 100, the side of the silicon wafer 100 can be ground only by the first grinding wheel 11, or by the second grinding wheel 12. In the preferred implementation of this embodiment, the first grinding wheel 11 and the second grinding wheel 12 cooperate to grind the side of the silicon wafer 100 together to improve work efficiency.

[0096] It should be noted that, during the grinding of the side surface of the silicon wafer 100 , the first grinding wheel 11 and the second grinding wheel 12 are arranged in mirror symmetry, which facilitates the setting of the relative positions of the first grinding wheel 11 and the second grinding wheel 12 .

[0097] Controlling the first grinding wheel 11 to tilt at a first preset angle to perform chamfering on the first edge corner;

[0098] The first preset angle may be 45-90 degrees, but is not limited thereto. The first grinding wheel 11 having a conical surface is used to chamfer the first edge corner to improve chamfering efficiency.

[0099] The second grinding wheel 12 is controlled to tilt at a second preset angle to perform chamfering on the second edge corner.

[0100] The second preset angle may be 45-90 degrees, but is not limited thereto. The second grinding wheel 12 having a conical surface is used to chamfer the second edge corner, thereby improving chamfering efficiency.

[0101] It should be noted that the first grinding wheel 11 and the second grinding wheel 12 are arranged in mirror symmetry, so that the first corner and the second corner after chamfering can be arranged symmetrically with respect to the radial center line of the silicon wafer 100, and of course other preset morphologies can also be used. In this embodiment, the first grinding wheel 11 chamfers the first corner, and the second grinding wheel 12 chamfers the second corner, so that a variety of morphologies can be formed accordingly, and the scope of application is wide.

[0102] There are a few points to note:

[0103] (1) The drawings of the embodiments of the present disclosure only relate to the structures related to the embodiments of the present disclosure, and other structures may refer to the general design.

[0104] (2) For the sake of clarity, in the drawings used to describe the embodiments of the present disclosure, the thickness of layers or regions is exaggerated or reduced, that is, these drawings are not drawn according to the actual scale. It is understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, the element may be "directly" "on" or "under" the other element or there may be intermediate elements.

[0105] (3) In the absence of conflict, the embodiments of the present disclosure and the features therein may be combined with each other to obtain new embodiments.

[0106] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A chamfering processing device for chamfering a silicon wafer, characterized in that: It includes a first grinding wheel, a second grinding wheel, a first control structure and a second control structure; The first control structure is used to control the first grinding wheel and the second grinding wheel to rotate in a first plane; The second control structure is used to control the silicon wafer to rotate in a second plane; The first control structure and the second control structure cooperate to chamfer the silicon wafer; The first plane and the second plane are parallel, and the second plane is parallel to the surface of the silicon wafer.

2. The chamfering device according to claim 1, characterized in that: The silicon wafer comprises a first surface and a second surface opposite to each other, a first corner is formed between the first surface and the side surface of the silicon wafer, and a second corner is formed between the second surface and the side surface of the silicon wafer; The first control structure is used to control the first grinding wheel and the second grinding wheel to switch between a first state and a second state; In the first state, the outer peripheral surface of the first grinding wheel is in surface contact with the side surface of the silicon wafer, and the outer peripheral surface of the second grinding wheel is in surface contact with the side surface of the silicon wafer, and the first grinding wheel and the second grinding wheel cooperate to grind the side surface of the silicon wafer as a whole; In the second state, the first grinding wheel is tilted at a first preset angle to grind the first corner of the silicon wafer, and the second grinding wheel is tilted at a second preset angle to grind the second corner of the silicon wafer.

3. The chamfering device according to claim 2, characterized in that: The first preset angle is 45-90 degrees, and the second preset angle is 45-90 degrees.

4. The chamfering device according to claim 1, characterized in that: The outer peripheral surface of the first grinding wheel is a conical surface, and the outer peripheral surface of the second grinding wheel is a conical surface.

5. The chamfering device according to claim 4, characterized in that: When chamfering a silicon wafer, the first grinding wheel and the second grinding wheel are arranged in a mirror image.

6. The chamfering device according to claim 1, characterized in that: The first control structure is used to control the first grinding wheel and the second grinding wheel to rotate at a first preset speed; The second control structure is used to control the silicon wafer to rotate at a second preset speed; The rotation direction of the first grinding wheel, the rotation direction of the second grinding wheel and the rotation direction of the silicon wafer are the same, and the first preset speed and the second preset speed are different.

7. The chamfering device according to claim 1, characterized in that: The rotation direction of the first grinding wheel and the rotation direction of the second grinding wheel are opposite to the rotation direction of the silicon wafer.

8. The chamfering device according to claim 1, characterized in that: The invention also includes a nozzle for spraying grinding fluid toward the first grinding wheel and the second grinding wheel.

9. A chamfering method, characterized in that: Used to chamfer a silicon wafer using the chamfering processing device according to any one of claims 1 to 8, The silicon wafer comprises a first surface and a second surface opposite to each other, a first corner is formed between the first surface and the side surface of the silicon wafer, and a second corner is formed between the second surface and the side surface of the silicon wafer; The chamfering method comprises: Controlling the first grinding wheel and the second grinding wheel to grind the side surface of the silicon wafer until the diameter of the silicon wafer reaches a preset diameter; Controlling the first grinding wheel to tilt at a first preset angle to perform chamfering on the first edge corner; Controlling the second grinding wheel to tilt at a second preset angle to perform chamfering on the second edge corner; Wherein, the first grinding wheel and the second grinding wheel both rotate in a first plane, and the silicon wafer rotates in a second plane and moves relative to the first grinding wheel and the second grinding wheel; The first plane and the second plane are parallel, and the second plane is parallel to the surface of the silicon wafer.

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