Wafer heater and chemical vapor deposition system

Abstract

The invention relates to a wafer heater and a chemical vapor deposition system, which are used for solving the technical problem of non-uniform distribution of inert gas on the back surface of a wafer. The wafer heater comprises a heating part used for supporting a wafer and heating the wafer, the upper surface of the heating part is provided with a gas distribution channel, the gas distribution channel comprises a gas inlet and at least one first annular groove surrounding the gas inlet, at least one of the at least one first annular groove is provided with an annular wave line contour, and the gas inlet is communicated with the gas inlet; the plurality of first connecting grooves are radially connected between the air inlet and at least one first annular groove along the radial direction of the first annular groove; and the interface part is arranged at the bottom of the heating part, and the gas inlet is configured to be in fluid communication with an inert gas source through the interface part.

Description

Technical Field

[0001] The present disclosure relates to the technical field of chemical vapor deposition, and in particular, to a wafer heater and a chemical vapor deposition system. Background Art

[0002] Chemical vapor deposition (CVD) technology is a process that uses gaseous substances to produce chemical reactions and transport reactions on solids to produce solid deposits. It can help improve the performance of crystals or crystal films. The most common way to use it is to use a chemical vapor deposition (CVD) system to generate a new epitaxial single crystal layer on a crystal substrate for the manufacture of various microelectronic devices.

[0003] The chemical vapor deposition system usually includes a reaction chamber and a wafer heater arranged in the reaction chamber. The wafer heater is used to support, fix and heat the wafer (crystal substrate). An inert gas needs to be injected between the wafer heater and the wafer. The reaction chamber needs to be injected with a reaction gas containing thin film raw materials. The reaction gas can chemically react on the upper surface of the heated wafer to deposit into a thin film.

[0004] In the related art, the inert gas is easily unevenly distributed between the wafer and the wafer heater, resulting in inconsistent thermal expansion and contraction of various parts on the back side of the wafer, and the wafer is prone to warping, thereby affecting the quality of the thin film generated on the upper surface of the wafer. Summary of the invention

[0005] The purpose of the present disclosure is to provide a wafer heater and a chemical vapor deposition system to solve the technical problem of uneven distribution of inert gas on the back side of the wafer.

[0006] In order to achieve the above-mentioned objectives, the present disclosure provides a wafer heater, comprising: a heating part, used to support a wafer and heat the wafer, a gas distribution channel is arranged on the upper surface of the heating part, and the gas distribution channel comprises: an air inlet, at least one first annular groove surrounding the air inlet, wherein at least one of the at least one first annular groove has an annular wavy line profile, and a plurality of first connecting grooves, radially connected between the air inlet and the at least one first annular groove along the radial direction of the first annular groove; and an interface part, arranged at the bottom of the heating part, and the air inlet is connected to the inert gas source fluid through the interface part.

[0007] Optionally, an annular boss is provided on the upper surface of the heating part, which surrounds the outer side of the gas distribution channel and is concentrically arranged with the first annular groove, and the annular boss is used to support the edge of the wafer to form a back cavity around the lower surface of the wafer and the upper surface of the heating part.

[0008] Optionally, the gas inlet is configured to be in fluid communication with a vacuum pump through the interface portion, so that the gas pressure in the back chamber is lower than the gas pressure above the wafer.

[0009] Optionally, the gas distribution channel also includes a first annular distribution groove concentrically arranged on the inner side of the at least one first annular groove, the air inlet is arranged in the first annular distribution groove, and a plurality of the first connecting grooves are radially connected between the first annular distribution groove and the at least one first annular groove.

[0010] Optionally, the annular wavy line profile is formed by a plurality of arc lines connected end to end in sequence along the circumferential direction, and the center of the arc line is located within the annular wavy line profile.

[0011] Optionally, the connecting ends of adjacent arc lines are connected to the same first connecting groove.

[0012] Optionally, the lengths and radii of the multiple arc lines are the same.

[0013] Optionally, the gas distribution channel includes a plurality of the first annular grooves, the plurality of the first annular grooves are sequentially spaced from the inside to the outside, and at least the outermost one of the plurality of the first annular grooves has an annular wavy line profile.

[0014] Optionally, a plurality of the first annular grooves are arranged at equal intervals.

[0015] Optionally, a plurality of raised support pads are provided on the upper surface of the heating portion, and at least the surface of the support pads in contact with the wafer is made of sapphire.

[0016] Optionally, the support pad includes: a plurality of fan-shaped support parts for supporting the central area of ​​the wafer, the plurality of fan-shaped support parts are arranged concentrically with the first annular groove and arranged in an array around the center of the first annular groove, and a plurality of circular support parts are arranged on the outside of the plurality of fan-shaped support parts.

[0017] Optionally, the heating portion further includes a multifunctional fluid channel, which includes: a fluid inlet configured to be fluidically connected to an external fluid source through the interface portion, and a second annular groove disposed on the upper surface of the heating portion and fluidically connected to the fluid inlet, the second annular groove surrounding the outer side of the gas distribution channel and being concentrically disposed with the first annular groove.

[0018] Optionally, the fluid inlet is arranged inside the heating part, and the multifunctional fluid channel also includes a first annular distribution chamber arranged inside the heating part, the first annular distribution chamber is fluidly connected to the fluid inlet, the first annular distribution chamber is concentrically arranged with the second annular groove, and is fluidly connected to the second annular groove through a plurality of through holes.

[0019] Optionally, the first annular distribution chamber surrounds the fluid inlet, and the multifunctional fluid channel further includes a plurality of second connecting grooves, and the plurality of second connecting grooves are radially connected between the fluid inlet and the first annular distribution chamber.

[0020] Optionally, the multifunctional fluid channel also includes a second annular distribution chamber concentrically arranged on the inner side of the first annular distribution chamber, the fluid inlet is arranged in the second annular distribution chamber, and a plurality of the second connecting grooves are radially connected between the second annular distribution chamber and the first annular distribution chamber.

[0021] On the basis of the above technical solution, the present disclosure also includes a chemical vapor deposition system, including: a reaction chamber, a top of the reaction chamber is provided with a reaction gas inlet, a bottom of the reaction chamber is provided with an exhaust port connected to the vacuum pump fluid, and the wafer heater in the above technical solution, the heating part is accommodated in the reaction chamber, and the interface part extends from the reaction chamber.

[0022] Through the above technical solution, in the wafer heater provided by the present disclosure, the gas distribution channel arranged on the upper surface of the heating part includes at least one first annular groove surrounding the air inlet and a plurality of first connecting grooves radially connected between the air inlet and the at least one first annular groove. The inert gas entering the gas distribution channel through the air inlet can be quickly and evenly distributed on the lower surface of the wafer under the guidance of the first connecting groove and the first annular groove, and the first annular groove with an annular wavy line profile can promote the inert gas to be more quickly and evenly distributed on the lower surface of the wafer. This can not only avoid deposition on the back of the wafer, resulting in uneven processing and particle contamination, but also promote the consistency of thermal expansion and contraction of the wafer during processing, minimize the warping or even damage of the wafer caused by thermal shock, and maintain the critical film thickness on the wafer. In addition, the gas distribution channel can promote a more uniform flow of process gas, minimize stagnant areas, facilitate the precursor molecules to quickly reach the wafer surface, minimize the change in reaction rate, and improve the consistency of film quality. Further, the gas distribution channel also helps to destroy the formation of a stagnant boundary layer near the wafer surface, which makes the supply of fresh precursor molecules more stable and further improves the uniformity of the film. The chemical vapor deposition system provided by the present disclosure has the same technical effect as the wafer heater in the above technical solution. In order to avoid unnecessary repetition, it will not be repeated here.

[0023] Other features and advantages of the present disclosure will be described in detail in the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the present disclosure but do not constitute a limitation of the present disclosure. In the accompanying drawings: Figure 1 is a schematic diagram of the structure of a chemical vapor deposition system in a specific embodiment of the present disclosure; Figure 2 yes Figure 1 Exploded diagram of Figure 3 is a schematic diagram of the structure of a wafer heater in a specific embodiment of the present disclosure from a top view; Figure 4 is a schematic diagram of the structure of a wafer heater in a specific embodiment of the present disclosure from an upward angle; Figure 5 is a top view of a heating portion of a wafer heater in a specific embodiment of the present disclosure; Figure 6 is a partial enlarged view of a heating portion of a wafer heater in a specific embodiment of the present disclosure; Figure 7 is a schematic diagram of a structure in which a wafer is placed on a heating part in a specific embodiment of the present disclosure; Figure 8 is a longitudinal cross-sectional view of a wafer heater according to a specific embodiment of the present disclosure; Fig. 9 yes Figure 8 Schematic diagram of the three-dimensional structure at A in the middle; Fig.10 is a cross-sectional view of a heating portion of a wafer heater in a specific embodiment of the present disclosure; Fig.11 It is a schematic diagram of the distribution of the inner heating zone and the annular outer heating zone of the heating part in the specific embodiment of the present disclosure.

[0025] Description of Reference Numerals 100-wafer, 200-reaction chamber, 1-heating part, 101-inner heating zone, 102-annular outer heating zone, 11-lower heating plate, 12-upper heating plate, 121-annular boss, 122-back cavity, 13-ceramic heating element, 131-first heating element, 132-second heating element, 14-brazing preform, 15-bottom plate, 17-gas distribution channel, 170-air inlet, 171-first annular groove, 172-first connecting groove, 173-first annular distribution groove, 18-support pad, 181-fan-shaped support part, 182-circular support part, 19-multifunctional fluid channel, 190-fluid inlet, 191-second annular groove, 192-second connecting groove, 193-first annular distribution chamber, 194-second annular distribution chamber, 195-through hole, 2-interface part, 21-heating element wire, 22-ceramic shaft. DETAILED DESCRIPTION

[0026] The specific implementation of the present disclosure is described in detail below in conjunction with the accompanying drawings. It should be understood that the specific implementation described herein is only used to illustrate and explain the present disclosure, and is not used to limit the present disclosure.

[0027] In the present disclosure, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower positions of the wafer heater in normal use. Figures 1 to 4 as well as Figures 7 to 10 The direction of the drawing. "Inside" and "outside" refer to the inside and outside relative to the contour of the corresponding component itself. The terms "first" and "second" are used to distinguish one element from another element and do not have order and importance. In addition, when the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements.

[0028] In order to achieve the above object, the present disclosure provides a wafer heater, referring to Figures 1 to 5 As shown, the wafer heater may include a heating portion 1 and an interface portion 2 .

[0029] Among them, reference Figure 1 , Figure 2 and Figure 7 As shown, the heating unit 1 can be used to support the wafer 100 and heat the wafer 100. Figure 3 , Figure 5 and Figure 6As shown, the upper surface of the heating part 1 may be provided with a gas distribution channel 17, and the gas distribution channel 17 may include an air inlet 170, at least one first annular groove 171 surrounding the air inlet 170, and a plurality of first connecting grooves 172, wherein at least one of the at least one first annular groove 171 may have an annular wavy line profile (i.e., formed into a flower shape). The plurality of first connecting grooves 172 may be radially connected between the air inlet 170 and the at least one first annular groove 171 along the radial direction of the first annular groove 171, and the inert gas enters the plurality of first connecting grooves 172 via the air inlet 170, and is guided by the plurality of first connecting grooves 172 to enter the first annular groove 171. The radially distributed multiple first connecting grooves 172 can quickly and evenly distribute the inert gas along the radial direction of the wafer 100, the first annular groove 171 can quickly and evenly distribute the inert gas along the circumferential direction of the wafer 100, and the first annular groove 171 with an annular wavy line profile can quickly and evenly distribute the inert gas along the radial and circumferential directions of the wafer 100 at the same time.

[0030] refer to Figure 1 and Figure 2 As shown, the interface portion 2 can be disposed at the bottom of the heating portion 1 , and the gas inlet 170 can be in fluid communication with the inert gas source via a gas inlet pipeline passing through the interface portion 2 .

[0031] Through the above technical solution, in the wafer heater provided by the present disclosure, the gas distribution channel 17 arranged on the upper surface of the heating part 1 includes at least one first annular groove 171 surrounding the air inlet 170 and a plurality of first connecting grooves 172 radially connected between the air inlet 170 and the at least one first annular groove 171. The inert gas entering the gas distribution channel 17 through the air inlet 170 can be quickly and evenly distributed on the lower surface of the wafer 100 under the guidance of the first connecting grooves 172 and the first annular grooves 171, and the first annular groove 171 with an annular wavy line profile can promote the inert gas to be more quickly and evenly distributed on the lower surface of the wafer 100. This can not only avoid deposition on the back of the wafer 100, resulting in uneven processing and particle contamination, but also promote the consistency of thermal expansion and contraction of the wafer 100 during processing, minimize the warping or even damage of the wafer 100 caused by thermal shock, and maintain the critical film thickness on the wafer 100. In addition, the gas distribution channel 17 can promote a more uniform flow of process gases, minimize stagnant areas, facilitate the precursor molecules to quickly reach the surface of the wafer 100, minimize changes in reaction rates, and improve the consistency of film quality. Furthermore, the gas distribution channel also helps to destroy the formation of a stagnant boundary layer near the surface of the wafer 100, which makes the supply of fresh precursor molecules more stable, further improving the uniformity of the film.

[0032] refer to Figure 5As shown, the annular wavy line profile can be formed by connecting multiple arc lines in sequence along the circumferential direction, the lengths and radii of the multiple arc lines can be the same, and the center of each arc line is located within the annular wavy line profile, that is, each arc line protrudes toward the outside of the annular wavy line profile, so that the area surrounded by the first annular groove 171 forms a flower shape. The connecting ends of adjacent arc lines can be connected to the same first connecting groove, so that the inert gas from the first connecting groove flows evenly into the two adjacent arc lines.

[0033] refer to Figure 2 and Figure 8 As shown, since the wafer 100 is a circular sheet structure, the heating part 1 can be constructed as a disc-shaped structure, and the diameter of the disc-shaped structure is larger than the diameter of the wafer 100, and the interface part 2 can be arranged at the center of the bottom of the heating part 1. Fig.11 As shown, the heating portion 1 may include an inner heating zone 101 and an annular outer heating zone 102, wherein the inner heating zone 101 may be arranged at a position corresponding to the central area of ​​the wafer 100, and the annular outer heating zone 102 may be substantially constructed in an annular shape to roughly surround the outer side of the inner heating zone 101 and be concentrically arranged with the inner heating zone 101, and the temperatures of the inner heating zone 101 and the annular outer heating zone 102 may be controlled separately through the interface portion 2 to accurately control the temperature curves of different areas on the heating portion 1, so that the heat distribution on the surface of the heating portion 1 is uniform, thereby ensuring that the thin film generated on the surface of the wafer 100 has good uniformity and deposition characteristics.

[0034] In order to facilitate the control of the temperature of the annular outer heating zone 102 through the interface portion 2, refer to Fig.11 As shown, a radially extending avoidance gap may be formed on the inner heating zone 101 , and a portion of the annular outer heating zone 102 may be inserted into the avoidance gap to approach the center position of the heating portion 1 .

[0035] In order to enable the inner heating zone 101 and the annular outer heating zone 102 to generate heat, the heating portion 1 may further include a bottom plate 15, a lower heating plate 11 and an upper heating plate 12 stacked in sequence from bottom to top, a ceramic heating element 13 is embedded between the upper heating plate 12 and the lower heating plate 11, and the upper heating plate 12 is used to place the wafer 100, that is, the wafer 100 is supported on the upper surface of the upper heating plate 12. The ceramic heating element 13 may include a first heating element 131 and a second heating element 132, wherein the first heating element 131 may be disposed in the inner heating zone 101, and the second heating element 132 may be disposed in the annular outer heating zone 102.

[0036] refer to Fig.11As shown, the first heating element 131 can be coiled in a serpentine shape in the inner heating zone 101 to fill the inner heating zone 101, so that the heating area of ​​the first heating element 131 in the inner heating zone 101 is maximized, and the second heating element 132 can be coiled in a serpentine shape in the annular outer heating zone 102 to fill the annular outer heating zone 102, so that the heating area of ​​the second heating element 132 in the annular outer heating zone 102 is maximized.

[0037] In addition, the cross section of the ceramic heating element 13 can be rectangular. Such a ceramic heating element 13 is not only not easy to break and has good durability, but also has a larger contact area with the upper heating plate 12 and the lower heating plate 11, which can significantly reduce the thermal resistance between the ceramic heating element 13 and the upper heating plate 12 and the lower heating plate 11, thereby making the heat conduction on the surface of the wafer 100 more efficient and more uniform. In addition, there will be no air gap around the ceramic heating element 13 with a rectangular cross section, which can improve the heat transfer efficiency of the ceramic heating element 13, improve the consistency of heat transfer, and minimize the risk of local hot spots or cold spots, improve the uneven heat distribution on the heating part 1, and thus improve the quality of the film generated on the wafer 100.

[0038] In order to ensure reliable connection between the upper heating plate 12 and the lower heating plate 11, refer to Figure 8 As shown, the heating part 1 may further include a brazing preform 14 disposed between the periphery of the upper heating plate 12 and the periphery of the lower heating plate 11 , and the upper heating plate 12 and the lower heating plate 11 may be welded and fixed by the brazing preform 14 to form a permanent and reliable seal between the upper heating plate 12 and the lower heating plate 11 .

[0039] refer to Figure 4 and Figure 8 As shown, the interface part 2 can be fixedly connected to the bottom plate 15, and the bottom plate 15 can separate the interface part 2 from the lower heating plate 11 to reduce heat transfer from the lower heating plate 11 to the interface part 2, thereby avoiding malfunction and damage of the interface part 2 due to high temperature.

[0040] refer to Figure 8 As shown, the end of the ceramic heating element 13 can pass through the lower heating plate 11 and the bottom plate 15 and extend into the interface part 2 to be connected with the heating element wire 21. In order to prevent the heating element wire 21 from transferring heat to the wires of other surrounding components, a ceramic shaft 22 can be further provided in the interface part 2, and the heating element wire 21 passes through the ceramic shaft 22, and the ceramic shaft 22 can insulate the heating element wire 21.

[0041] In order to facilitate the storage of the wires and fluid lines of various components on the wafer heater, refer to Figure 4 and Figure 8As shown, the interface part 2 can be constructed as a vertically extending sleeve-like structure to facilitate the passage of wires and fluid pipelines. The upper end of the interface part 2 can be fixedly connected to the base plate 15, and the ceramic shaft 22 used to insulate the heating element wire 21 can be fixed to the inner wall of the interface part 2 by a high melting point and high strength plastic.

[0042] refer to Figure 3 , Figure 5 , Figure 7 as well as Fig. 9 As shown, the upper surface of the heating part 1 may also be provided with an annular boss 121, that is, the upper surface of the upper heating plate 12 may be provided with an annular boss 121, the annular boss 121 may surround the outer side of the gas distribution channel 17 and be concentrically arranged with the first annular groove 171, and the annular boss 121 is used to support the edge of the wafer 100 to form a back cavity 122 around the lower surface of the wafer 100 and the upper surface of the heating part 1. Through the support of the annular boss 121, not only can the risk of warping of the wafer 100 be further reduced, but also the back cavity 122 can be sealed to prevent the inert gas from overflowing and accelerate the uniform distribution of the inert gas on the lower surface of the wafer 100.

[0043] In addition, the air inlet 170 can also be fluidically connected to a vacuum pump (not shown) through the interface portion 2, so that the air pressure in the back cavity 122 is lower than the air pressure above the wafer 100. In this way, the wafer 100 can be pressed tightly against the heating portion 1 to prevent the wafer 100 from shifting during the thin film deposition process, and impurities in the back cavity 122 can be removed by vacuuming before thin film deposition, thereby minimizing contamination.

[0044] In order to make the gas flowing out of the gas inlet 170 flow into the plurality of first connecting grooves 172 uniformly, Figure 3 and Figure 5 As shown, the plurality of gas distribution channels 17 may further include a first annular distribution groove 173 concentrically disposed inside the at least one first annular groove 171, that is, the diameter of the first annular distribution groove 173 is smaller than the first annular groove 171, the air inlet 170 may be disposed in the first annular distribution groove 173, and the plurality of first connecting grooves 172 are radially connected between the first annular distribution groove 173 and the at least one first annular groove 171. The gas flowing out of the air inlet 170 can be evenly distributed in the first annular distribution groove 173, and evenly enter the plurality of first connecting grooves 172 through the first annular distribution groove 173.

[0045] In order to promote the uniform distribution of the inert gas along the radial direction of the wafer 100, the gas distribution channel 17 may include a plurality of first annular grooves 171, and at least the outermost one of the plurality of first annular grooves 171 (i.e., the one with the largest diameter) has an annular wavy line profile to accelerate the uniform distribution of the inert gas near the edge of the wafer 100. Figure 3 and Figure 5 In the illustrated embodiment, the gas distribution passage 17 may include two first annular grooves 171 , and the one with a larger diameter has an annular wavy line profile.

[0046] Furthermore, the plurality of first annular grooves 171 may be arranged at equal intervals to further promote uniform distribution of the inert gas along the radial direction of the wafer 100 .

[0047] refer to Figure 3 , Figure 5 and Figure 7 As shown, the upper surface of the heating part 1, that is, the upper surface of the upper heating plate 12, can also be provided with a plurality of raised support pads 18, and the plurality of support pads 18 can be distributed on the inner side of the annular boss 121. Through the cooperation of the plurality of support pads 18 and the annular boss 121, it is possible to uniformly support various areas of the wafer 100 when the wafer 100 is pressed onto the heating part 1, so that the surface of the wafer 100 is uniformly stressed to avoid warping of the wafer 100, and a back cavity 122 can be formed between the wafer 100 and the upper surface of the heating part 1, thereby improving the vacuum distribution in the back cavity 122, enhancing the pressing force on the wafer 100, and reducing the potential space for particle accumulation, thereby minimizing particle contamination.

[0048] Among them, at least the surface of the support pad 18 that contacts the wafer 100 can be made of sapphire material to effectively conduct heat between the heating part 1 and the wafer 100. In addition, the sapphire support pad 18 has high hardness, wear resistance and thermal stability, can reduce the generation of particles, and help create a cleaner deposition environment. At the same time, the sapphire support pad 18 helps to provide a more stable platform for the wafer 100 during the heating and cooling cycles.

[0049] refer to Figure 3 , Figure 5 as well as Figure 6As shown, the support pad 18 may include a plurality of fan-shaped support portions 181 and a plurality of circular support portions 182, wherein the plurality of fan-shaped support portions 181 are used to support the central area of ​​the wafer 100, and the plurality of fan-shaped support portions 181 may be arranged concentrically with the first annular groove 171 and arranged in an array around the center of the first annular groove 171. Specifically, the plurality of fan-shaped support portions 181 may be arranged on the inner side of the first annular distribution groove 173, and the fan-shaped support portions 181 have a larger contact area with the wafer 100, and can effectively support the central area of ​​the wafer 100 which is most susceptible to deformation. The plurality of circular support portions 182 may be arranged on the outer sides of the plurality of fan-shaped support portions 181 and arranged at intervals. Compared with the fan-shaped support portions 181, the circular support portions 182 have a smaller contact area with the wafer 100, and can increase the contact area between the lower surface of the wafer 100 and the inert gas, and the plurality of circular support portions 182 can cooperate with each other to effectively support the wafer 100.

[0050] In addition, reference Figure 2 , Figure 5 , Figure 6 as well as Figures 8 to 10 As shown, the heating portion 1 may further include a multifunctional fluid channel 19 for cooling and / or local cleaning, and the multifunctional fluid channel 19 may include a fluid inlet 190 and a second annular groove 191, wherein the fluid inlet 190 may be fluidly connected to an external fluid source via an air path and / or a water path passing through the interface portion 2, and the second annular groove 191 may be disposed on the upper surface of the heating portion 1 and fluidly connected to the fluid inlet 190, and the second annular groove 191 may surround the outer side of the gas distribution channel 17 and be concentrically disposed with the first annular groove 171, and specifically, the second annular groove 191 may surround the outer side of the annular boss 121.

[0051] The multifunctional fluid channel 19 can be used as a cleaning channel. Specifically, by introducing cleaning gas and / or cleaning liquid into the fluid inlet 190, a specific area around the wafer 100 can be cleaned in a targeted manner, such as the vicinity of the edge of the wafer 100 where contaminants are more likely to accumulate. The multifunctional fluid channel 19 can also be used as a cooling channel. Specifically, by introducing a coolant (such as cooling gas or cooling liquid) into the fluid inlet 190, the temperature of the edge of the wafer 100 can be adjusted during the thin film deposition process.

[0052] In addition, the multifunctional fluid channel 19 can also form a cooling channel network in the heating part 1 to accurately control the temperature of the heating part 1 during the thin film deposition process. Fig.10As shown, the fluid inlet 190 can be arranged inside the heating part 1, specifically, the fluid inlet 190 can be arranged in the lower heating plate 11, and the fluid pipeline in fluid communication with the external fluid source can pass through the interface 2, the bottom plate 15 and the lower heating plate 11 to communicate with the fluid inlet 190. The multifunctional fluid channel 19 can also include a first annular distribution chamber 193 arranged inside the heating part 1, the first annular distribution chamber 193 can be in fluid communication with the fluid inlet 190, the first annular distribution chamber 193 can be arranged concentrically with the second annular groove 191, and is in fluid communication with the second annular groove 191 through a plurality of through holes 195. Figures 8 to 10 In the embodiment, the first annular distribution chamber 193 may have the same diameter as the second annular groove 191 , and the through hole 195 may pass through the lower heating plate 11 and the upper heating plate 12 to connect the first annular distribution chamber 193 with the second annular groove 191 .

[0053] refer to Fig.10 As shown, the first annular distribution chamber 193 may surround the fluid inlet 190, and the multifunctional fluid channel 19 may further include a plurality of second connecting grooves 192, which are radially connected between the fluid inlet 190 and the first annular distribution chamber 193. Through the first annular distribution chamber 193 and the plurality of second connecting grooves 192, the coolant can be evenly distributed in the heating portion 1 along the circumferential direction and the radial direction.

[0054] refer to Fig.10 As shown, the multifunctional fluid channel 19 may further include a second annular distribution chamber 194 concentrically disposed inside the first annular distribution chamber 193, the fluid inlet 190 may be disposed in the second annular distribution chamber 194, and a plurality of second connecting grooves 192 may be radially connected between the second annular distribution chamber 194 and the first annular distribution chamber 193. Through the second annular distribution chamber 194, the coolant from the fluid inlet 190 can evenly enter the plurality of second connecting grooves 192 to further promote the uniform distribution of the coolant in the heating portion 1.

[0055] On the basis of the above technical solution, the present disclosure also includes a chemical vapor deposition system, referring to Figure 1As shown, the chemical vapor deposition system may include a reaction chamber 200 and the wafer heater in the above technical solution, wherein a reaction gas inlet (not shown) may be provided at the top of the reaction chamber 200, and an exhaust port (not shown) connected to the vacuum pump fluid may be provided at the bottom of the reaction chamber 200, and the vacuum pump can suck the reaction chamber 200 through the exhaust port, so that the upper chamber pressure of the reaction chamber 200 (that is, the pressure above the wafer 100 in the reaction chamber 200) is greater than the pressure in the back chamber 122, and the pressure in the back chamber 122 is greater than the lower chamber pressure of the reaction chamber 200 (that is, the pressure below the wafer 100 in the reaction chamber 200), so that the wafer 100 can be pressed against the heating part 1, and the reaction gas can be guided to move toward the wafer 100, thereby accelerating the formation of the thin film.

[0056] refer to Figure 1 As shown, the heating part 1 can be accommodated in the reaction chamber 200, and the control module, external power supply, inert gas source and external fluid source for local cleaning and / or cooling can be arranged outside the reaction chamber 200 to avoid the high temperature in the reaction chamber 200 affecting its operation, and the interface part 2 can extend from the reaction chamber 200 so that the heating part 1 can be connected to the control module, external power supply, inert gas source and external fluid source for local cleaning and / or cooling through the interface part 2.

[0057] Through the above technical solution, the chemical vapor deposition system provided by the present disclosure has the same technical effect as the wafer heater in the above technical solution. In order to avoid unnecessary repetition, it will not be described here.

[0058] The preferred embodiments of the present disclosure are described in detail above in conjunction with the accompanying drawings; however, the present disclosure is not limited to the specific details in the above embodiments. Within the technical concept of the present disclosure, a variety of simple modifications can be made to the technical solution of the present disclosure, and these simple modifications all fall within the protection scope of the present disclosure.

[0059] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present disclosure will not further describe various possible combinations.

[0060] In addition, various embodiments of the present disclosure may be arbitrarily combined, and as long as they do not violate the concept of the present disclosure, they should also be regarded as the contents disclosed by the present disclosure.

Claims

1. A wafer heater, characterized in that: include: The heating part is used to support the wafer and heat the wafer, and the upper surface of the heating part is provided with a gas distribution channel, and the gas distribution channel includes: Air Inlet, at least one first annular groove surrounding the air inlet, wherein at least one of the at least one first annular groove has an annular wavy line profile, and a plurality of first connecting grooves, radially connected between the air inlet and the at least one first annular groove along the radial direction of the first annular groove; and The interface portion is arranged at the bottom of the heating portion, and the gas inlet is configured to be in fluid communication with an inert gas source through the interface portion.

2. The wafer heater according to claim 1, characterized in that: The upper surface of the heating portion is provided with an annular boss, which surrounds the outer side of the gas distribution channel and is arranged concentrically with the first annular groove. The annular boss is used to support the edge of the wafer and surrounds the lower surface of the wafer and the upper surface of the heating part to form a back cavity.

3. The wafer heater according to claim 2, characterized in that: The gas inlet is further configured to be in fluid communication with a vacuum pump through the interface portion, so that the gas pressure in the back chamber is lower than the gas pressure above the wafer.

4. The wafer heater according to claim 1, characterized in that: The gas distribution channel also includes a first annular distribution groove concentrically arranged on the inner side of the at least one first annular groove, the air inlet is arranged in the first annular distribution groove, and a plurality of the first connecting grooves are radially connected between the first annular distribution groove and the at least one first annular groove.

5. The wafer heater according to claim 1, characterized in that: The annular wavy line profile is formed by connecting multiple arc lines end to end in sequence along the circumferential direction, and the center of the arc line is located within the annular wavy line profile. Optionally, the connecting ends of adjacent arc lines are connected to the same first connecting groove. Optionally, the lengths and radii of the multiple arc lines are the same.

6. The wafer heater according to any one of claims 1 to 5, characterized in that: The gas distribution channel includes a plurality of first annular grooves, which are spaced apart from each other in sequence from the inside to the outside, and at least the outermost one of the plurality of first annular grooves has an annular wavy line profile. Optionally, the plurality of first annular grooves are arranged at equal intervals.

7. The wafer heater according to claim 1, characterized in that: A plurality of raised support pads are arranged on the upper surface of the heating portion, and at least the surface of the support pads in contact with the wafer is made of sapphire.

8. The wafer heater according to claim 7, characterized in that: The support pad comprises: a plurality of fan-shaped support portions, for supporting the central area of ​​the wafer, the plurality of fan-shaped support portions being arranged concentrically with the first annular groove and arranged in an array around the center of the first annular groove, and A plurality of circular support parts are arranged at the outer sides of the plurality of fan-shaped support parts.

9. The wafer heater according to claim 1, characterized in that: The heating portion further comprises a multifunctional fluid channel, wherein the multifunctional fluid channel comprises: a fluid inlet configured to be in fluid communication with an external fluid source through the interface portion, and A second annular groove is disposed on the upper surface of the heating portion and is in fluid communication with the fluid inlet, the second annular groove surrounds the outer side of the gas distribution channel and is concentrically disposed with the first annular groove; Optionally, the fluid inlet is arranged inside the heating part, and the multifunctional fluid channel further comprises a first annular distribution chamber arranged inside the heating part, the first annular distribution chamber is fluidically connected to the fluid inlet, the first annular distribution chamber is concentrically arranged with the second annular groove, and is fluidically connected to the second annular groove through a plurality of through holes; Optionally, the first annular distribution chamber surrounds the fluid inlet, and the multifunctional fluid channel further comprises a plurality of second connecting grooves, and the plurality of second connecting grooves are radially connected between the fluid inlet and the first annular distribution chamber; Optionally, the multifunctional fluid channel also includes a second annular distribution chamber concentrically arranged on the inner side of the first annular distribution chamber, the fluid inlet is arranged in the second annular distribution chamber, and a plurality of the second connecting grooves are radially connected between the second annular distribution chamber and the first annular distribution chamber.

10. A chemical vapor deposition system, characterized in that: include: A reaction chamber, wherein a reaction gas inlet is disposed at the top of the reaction chamber, and an exhaust port in fluid communication with a vacuum pump is disposed at the bottom of the reaction chamber, and The wafer heater according to any one of claims 1 to 9, wherein the heating portion is accommodated in the reaction chamber, and the interface portion extends from the reaction chamber.

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