Crystal growth device and crystal growth method thereof

Abstract

The invention discloses a crystal growth device and a crystal growth method thereof. The crystal growth device comprises a crucible; the mold is positioned in the crucible; the isolation assembly is arranged around the mold; the heat preservation cover surrounds the crucible and extends to the position above the isolation assembly, and an avoiding space and at least one exhaust channel are formed in the heat preservation cover; the avoiding space is used for avoiding a crystal growing on the mold; the lower end of the avoiding space communicates with the interior of the isolation assembly, and the lower end of the exhaust channel communicates with the exterior of the isolation assembly. The avoiding space is communicated with the interior of the isolation assembly, the exhaust channel is communicated with the exterior of the isolation assembly, most volatile matter is located outside the isolation assembly and in the exhaust channel, growing crystals are located inside the isolation assembly and in the avoiding space, the contact between the volatile matter and the growing crystals is small, and the quality of the crystals is improved.

Description

Technical Field

[0001] The invention relates to the field of crystal growth, and in particular to a crystal growth device and a crystal growth method thereof. Background Art

[0002] During the growth of oxide crystals such as gallium oxide, the raw materials are usually heated and melted. The melting point of these raw materials is above 1000°C, and at high temperatures, the melt will form volatiles.

[0003] In the prior art, the crucible for placing the crystal raw material is usually open or closed, and the volatiles will gather above the melt. Even if a closed crucible is used, after these volatiles gather more and more, some of them will still be deposited on the growing crystal, reducing the quality of the crystal.

[0004] Therefore, the prior art still needs to be improved and developed. Summary of the invention

[0005] The technical problem to be solved by the present invention is to provide a crystal growth device and a crystal growth method thereof in view of the above-mentioned defects of the prior art, aiming to solve the problem in the prior art that volatiles in the crystal raw materials lead to low crystal quality.

[0006] The technical solution adopted by the present invention to solve the technical problem is as follows:

[0007] A crystal growth device, comprising:

[0008] Crucible;

[0009] a mold, located in the crucible;

[0010] an isolation assembly, disposed around the mold;

[0011] A heat-insulating cover, surrounding the crucible and extending to the top of the isolation assembly, wherein a space for avoiding a position and at least one exhaust channel are formed on the heat-insulating cover;

[0012] Wherein, the avoidance space avoids the crystal grown on the mold;

[0013] The lower end of the avoidance space is communicated with the interior of the isolation assembly, and the lower end of the exhaust passage is communicated with the exterior of the isolation assembly.

[0014] The crystal growth device, wherein the crystal growth device further comprises:

[0015] a shell, wherein the crucible is located in the shell;

[0016] a first ventilation pipe, wherein a first end of the first ventilation pipe is communicated with an upper end of the exhaust passage, and a second end of the first ventilation pipe extends outside the housing;

[0017] A seed crystal rod is arranged on the shell and passes through the upper end of the avoidance space.

[0018] The crystal growth device, wherein the crystal growth device further comprises:

[0019] A three-way pipe, a first end of which is connected to the second end of the first ventilation pipe;

[0020] A first valve body, disposed at the second end of the three-way pipe;

[0021] A second valve body, disposed at the third end of the three-way pipe;

[0022] A second ventilation pipe, two ends of which are respectively connected to the first valve body and the air extraction device;

[0023] A third ventilation pipe, a first end of which is connected to the second valve body, and the third ventilation pipe extends into the shell.

[0024] The crystal growth device, wherein the housing is provided with at least one observation window;

[0025] At least one observation channel is provided on the heat preservation cover, and the observation channel is not connected with the exhaust channel;

[0026] Wherein, two ends of the observation channel point to the mold and the observation window respectively.

[0027] The crystal growth device, wherein the heat-insulating cover comprises:

[0028] A cylinder, located in the shell and surrounding the crucible;

[0029] A first cover body group, located on the cylinder body;

[0030] At least one second cover group, located on the cylinder;

[0031] A cover body group, located on the cover body group;

[0032] Wherein, the observation channel is formed in the first cover group;

[0033] The avoidance space is formed in the first cover body group, the second cover body group and the cover body group;

[0034] The exhaust passage is formed in the first cover body group, the second cover body group, and the lid body group.

[0035] The crystal growth device, wherein the isolation component comprises:

[0036] The isolation plate is provided with a through hole, and the upper end of the mold is located in the through hole;

[0037] An isolation cover, wherein the lower end of the isolation cover abuts against the edge of the through hole on the isolation plate, and the upper end of the isolation cover abuts against the edge of the lower end of the avoidance space on the heat-insulating cover.

[0038] The crystal growth device, wherein the isolation component further comprises:

[0039] A support plate, wherein the upper end of the support plate is connected to the lower surface of the isolation plate, and the lower end of the support plate is against the bottom of the crucible.

[0040] In the crystal growth device, the support plate and the mold are made of the same material.

[0041] A crystal growth method of the crystal growth device as described in any one of the above, comprising the steps of:

[0042] During the crystal growth process, part of the gas in the crucible is exhausted from the exhaust channel and the first ventilation pipe, and gas is replenished.

[0043] The crystal growth method, wherein during the crystal growth process, part of the gas in the crucible is discharged from the exhaust channel and the first vent pipe, and the gas is replenished, specifically comprising:

[0044] During the crystal growth process, the first valve body is controlled to be opened and the second valve body is controlled to be closed, and after the exhaust device is started to discharge part of the gas in the crucible, the first valve body and the exhaust device are closed;

[0045] The second valve body is controlled to open, and after the gas in the shell is replenished into the crucible, the second valve body is closed.

[0046] Beneficial effects: the avoidance space is connected to the interior of the isolation component, the exhaust channel is connected to the exterior of the isolation component, most of the volatiles are located outside the isolation component and in the exhaust channel, the growing crystals are located inside the isolation component and in the avoidance space, the volatiles have less contact with the growing crystals, and the quality of the crystals is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 It is a first structural schematic diagram of a crystal growth device in an embodiment of the present invention.

[0048] Figure 2 1 is a first cross-sectional view of a crystal growth apparatus according to an embodiment of the present invention.

[0049] Figure 3 4 is a second cross-sectional view of the crystal growth apparatus according to the embodiment of the present invention.

[0050] Figure 4Schematic diagram of the second structure of the crystal growth device in the embodiment of the present invention.

[0051] Figure 5 yes Figure 4 Enlarged view of point A in the middle.

[0052] Figure 6 Schematic diagram of the structure of the crucible, the mold and the isolation assembly in the embodiment of the present invention.

[0053] Figure 7 Schematic diagram of the structure of the crucible and the mold in the embodiment of the present invention.

[0054] Figure 8 It is a first structural schematic diagram of the isolation component in an embodiment of the present invention.

[0055] Fig. 9 1 is a second structural schematic diagram of the isolation component in an embodiment of the present invention.

[0056] Fig.10 1 is a first structural schematic diagram of a module in the first cover body group in an embodiment of the present invention.

[0057] Fig.11 1 is a second structural schematic diagram of the modules in the first cover body group in an embodiment of the present invention.

[0058] Fig.12 1 is a schematic diagram of the first structure of the module in the second cover body group in an embodiment of the present invention.

[0059] Fig.13 4 is a second structural schematic diagram of a module in the second cover body group in an embodiment of the present invention.

[0060] Fig.14 Schematic diagram of the structure of the module in the cover assembly according to the embodiment of the present invention.

[0061] Description of reference numerals:

[0062] 10. Shell; 11. Observation window; 20. Crucible; 30. Mould; 40. Isolation assembly; 41. Isolation plate; 411. Through hole; 412. Ear; 42. Isolation cover; 43. Support plate; 50. Insulation cover; 51. Avoidance space; 52. Exhaust passage; 53. Observation passage; 54. Cylinder; 55. First cover group; 56. Second cover group; 57. Cover group; 571. First cylindrical hole; 572. Second cylindrical hole; 60. Seed rod; 61. Lifter; 71. Three-way pipe; 72. First valve body; 73. Second valve body; 74. Second ventilation pipe; 75. Third ventilation pipe. DETAILED DESCRIPTION

[0063] In order to make the purpose, technical solution and advantages of the present invention clearer and more specific, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0064] Please also see Figure 1-Figure 14 , the present invention provides some embodiments of a crystal growth device.

[0065] like Figure 1-Figure 2 As shown, the crystal growth device of the present invention comprises:

[0066] Crucible 20;

[0067] A mold 30, located in the crucible 20;

[0068] An isolation assembly 40, arranged around the mold 30;

[0069] A heat-insulating cover 50, surrounding the crucible 20 and extending to the top of the isolation assembly 40, wherein a space 51 and at least one exhaust channel 52 are formed on the heat-insulating cover 50;

[0070] The avoidance space 51 is used to avoid the crystal grown on the mold 30;

[0071] The lower end of the avoidance space 51 is communicated with the interior of the isolation assembly 40 , and the lower end of the exhaust passage 52 is communicated with the exterior of the isolation assembly 40 .

[0072] Specifically, the crucible 20 is used to load the crystal raw material, which is in liquid state after melting and is located in the crucible 20. The material used for the crucible 20 is determined according to the crystal raw material. For example, when the crystal raw material is gallium oxide, the crucible 20 uses an iridium crucible or an iridium alloy crucible. The mold 30 refers to a mold 30 for growing crystals. The mold 30 has a gap. Under the action of capillary, the molten liquid in the crucible 20 rises from the gap to the upper end of the mold 30, and forms a thin layer of molten liquid at the upper end of the mold 30. The isolation component 40 is used to isolate volatiles, and the volatiles above the molten liquid in the crucible 20 are isolated outside the isolation component 40. The isolation component 40 has fewer volatiles, and the volatiles in contact with the growing crystal are also fewer, and the crystal quality is higher. The heat preservation cover 50 is used for heat preservation, which is conducive to forming a more stable temperature field in and near the crucible 20, which is conducive to crystal growth. The avoidance space 51 is used to avoid the growing crystal. In the early stage of crystal growth, the seed crystal contacts the molten liquid at the upper end of the mold 30, and the temperature of the molten liquid decreases. It cools at the lower end of the seed crystal to form a solid crystal. After the seed crystal is gradually pulled up, the crystal gradually grows. The growing crystal gradually increases and passes through the isolation component 40 to reach the avoidance space 51. The exhaust channel 52 is used to exhaust gas, and volatiles will also be exhausted. The avoidance space 51 is connected to the interior of the isolation component 40, and the exhaust channel 52 is connected to the outside of the isolation component 40. Most of the volatiles are located outside the isolation component 40 and in the exhaust channel 52. The growing crystal is located inside the isolation component 40 and in the avoidance space 51. The volatiles have less contact with the growing crystal, which improves the quality of the crystal.

[0073] In a preferred implementation of the embodiment of the present invention, Figure 1-Figure 2 As shown, the crystal growth device also includes:

[0074] A housing 10, wherein the crucible 20 is located inside the housing 10;

[0075] a first ventilation pipe, wherein a first end of the first ventilation pipe is communicated with an upper end of the exhaust passage 52, and a second end of the first ventilation pipe extends to the outside of the housing 10;

[0076] The seed rod 60 is disposed in the housing 10 and passes through the upper end of the avoidance space 51 .

[0077] Specifically, the shell 10 is conducive to maintaining the atmosphere and temperature for crystal growth. Crystal growth usually requires an inert atmosphere. Inert gas is introduced into the shell 10 to avoid oxidation of crystals and other structures. The crucible 20, the mold 30, the isolation assembly 40 and the heat preservation cover 50 are all located in the shell 10. In order to facilitate the discharge of volatiles, a first vent pipe is configured, and the volatiles are discharged from the shell 10 through the exhaust channel 52 and the first vent pipe. Specifically, the gas in the first vent pipe can be extracted by an exhaust device to discharge the volatiles. The seed crystal rod 60 is used to place the seed crystal, and the seed crystal rod 60 can pass through the avoidance space 51 to reach the upper end of the mold 30. The seed crystal rod 60 has a lifting function to achieve the lifting of the crystal.

[0078] In a preferred implementation of the embodiment of the present invention, the crystal growth device further includes: a heating device, which surrounds the crucible 20 and heats the crystal raw material in the crucible 20. For example, the heating device uses an induction coil, and a current is passed through the induction coil to form a changing magnetic field. The crucible 20 continuously cuts the magnetic field lines to generate an induced current and heat to heat the crystal raw material.

[0079] In a preferred implementation of an embodiment of the present invention, the crystal growth device also includes: a gas supply device and a vacuum pump, which are respectively connected to the shell 10, the gas supply device provides inert gas to the shell 10, and the vacuum pump is used to remove the gas in the shell 10 to form a vacuum environment, which is beneficial to reducing the oxygen content in the shell 10.

[0080] In a preferred implementation of the embodiment of the present invention, Figure 1 and Figure 4 As shown, the crystal growing device further includes: a lifter 61 connected to the seed crystal rod 60, and used to lift and lower the seed crystal rod 60, thereby lifting the growing crystal.

[0081] In a preferred implementation of the embodiment of the present invention, the crystal growth device further includes: a temperature sensor for detecting the temperature of the molten liquid, and the temperature sensor can be an infrared thermometer.

[0082] Specifically, the heating device is located inside the shell 10 , and the air supply device, the vacuum pump, the lifter 61 and the temperature sensor can be arranged outside the shell 10 .

[0083] In a preferred implementation of the embodiment of the present invention, Figure 4-Figure 5 As shown, the crystal growth device also includes:

[0084] A three-way pipe 71, a first end of the three-way pipe 71 is connected to the second end of the first ventilation pipe;

[0085] A first valve body 72, disposed at the second end of the three-way pipe 71;

[0086] A second valve body 73 is disposed at the third end of the three-way pipe 71;

[0087] The second ventilation pipe 74 has two ends connected to the first valve body 72 and the air extraction device respectively;

[0088] A third ventilation pipe 75 , a first end of which is connected to the second valve body 73 , and the third ventilation pipe 75 extends into the housing 10 .

[0089] Specifically, the heat preservation cover 50 has a certain degree of airtightness, and the isolation assembly 40 also has a certain degree of airtightness. After the gas in the crucible 20, the exhaust channel 52, and the first vent pipe is discharged, the air pressure is reduced, and the gas needs to be replenished in time. Specifically, the gas in the shell 10 can be replenished into the crucible 20. After the first valve body 72 is opened and the second valve body 73 is closed, the gas extraction device is started to extract the gas in the crucible 20, the exhaust channel 52, and the first vent pipe, and the volatiles are discharged. After the first valve body 72 is closed and the second valve body 73 is opened, the gas in the shell 10 enters the crucible 20 along the third vent pipe 75, the second valve body 73, the first vent pipe, and the exhaust pipe, and the exhaust pipe plays an air intake role, which is conducive to quickly restoring the air pressure in the crucible 20. The exhaust device and the vacuum pump can be used as a device; the exhaust device and the vacuum pump can also be two independent devices, used separately. The vacuum pump has higher requirements for the vacuum degree, while the exhaust device has lower requirements for the vacuum degree.

[0090] In a preferred implementation of the embodiment of the present invention, Figure 1-Figure 4 As shown, at least one observation window 11 is provided on the shell 10; at least one observation channel 53 is provided on the heat preservation cover 50, and the observation channel 53 is not connected with the exhaust channel 52; the two ends of the observation channel 53 point to the mold 30 and the observation window 11 respectively.

[0091] Specifically, in order to facilitate observation of crystal growth, an observation window 11 is provided on the housing 10, and an observation channel 53 is provided on the heat-insulating cover 50. The two ends of the observation channel 53 point to the mold 30 and the observation window 11, respectively. From the observation window 11, the upper end of the mold 30 can be seen through the observation channel 53, so that the crystal growth at the upper end of the mold 30 can be seen. The temperature sensor can also detect the temperature of the molten liquid at the upper end of the mold 30 through the observation channel 53.

[0092] In a preferred implementation of the embodiment of the present invention, Figure 2-Figure 3 As shown, the heat preservation cover 50 includes:

[0093] A cylinder 54 is located in the shell 10 and surrounds the crucible 20;

[0094] A first cover group 55, located on the cylinder 54;

[0095] At least one second cover group 56, located on the cylinder 54;

[0096] A cover assembly 57, located on the cover assembly;

[0097] Among them, the observation channel 53 is formed in the first cover group 55; the avoidance space 51 is formed in the first cover group 55, the second cover group 56 and the cover group 57; the exhaust channel 52 is formed in the first cover group 55, the second cover group 56 and the cover group 57.

[0098] Specifically, the heat preservation cover 50 has four structures, namely, a cylinder 54, a first cover group 55, a second cover group 56 and a cover group 57, which are stacked in sequence to form the heat preservation cover 50. The cylinder 54 is mainly used to insulate the surroundings of the crucible 20. The first cover group 55, the second cover group 56 and the cover group 57 are all located above the crucible 20, and are mainly used to insulate the space above the crucible 20, especially the growing crystals, to prevent the growing crystals from cooling down too quickly, which is beneficial to improving the quality of the crystals.

[0099] like Figure 2 , Figure 10-13 As shown, the difference between the first cover group 55 and the second cover group 56 is that the first cover group 55 forms an observation channel 53, while the second cover group 56 does not form an observation channel 53. The first cover group 55 and the second cover group 56 have in common that both form an avoidance space 51 and an exhaust channel 52. The avoidance space 51 forms a rectangular space on the first cover group 55 and the second cover group 56, which is conducive to avoiding rectangular crystals; the exhaust channel 52 forms a rectangular space on the first cover group 55 and the second cover group 56, forming a larger space that is conducive to accommodating more volatiles. Figure 2 and Fig.14 As shown, the cover group 57 is located at the top. In order to form a certain airtight avoidance space 51 and an exhaust channel 52, a first cylindrical hole 571 and at least one second cylindrical hole 572 are formed on the cover group 57. The first cylindrical hole 571 serves as the avoidance space 51. The aperture of the first cylindrical hole 571 is close to the diameter of the seed crystal rod 60, and its main function is to allow the seed crystal rod 60 to pass through. The second cylindrical hole 572 serves as the exhaust channel 52, and is mainly used to connect the first ventilation pipe. For example, the first end of the first ventilation pipe is inserted into the second cylindrical hole 572, and the outer diameter of the first ventilation pipe is close to the aperture of the second cylindrical hole 572. The first cover group 55, the second cover group 56 and the cover group 57 are all formed by splicing two identical modules. Fig.12 and Fig.13 Although the modules of the second cover body group 56 shown have different structures, the second cover body group 56 formed by splicing two identical modules is the same.

[0100] Since the observation channel 53 is connected to the interior of the housing 10 and the interior of the isolation assembly 40, even if a small amount of volatiles are generated in the isolation assembly 40, they will be dispersed into the interior of the housing 10 and will not hinder crystal growth and observation. The observation channel 53 is not connected to the exhaust channel 52, but is connected to the avoidance space 51.

[0101] In a preferred implementation of the embodiment of the present invention, Figure 3 , Figure 6-Figure 9 As shown, the isolation assembly 40 includes:

[0102] The isolation plate 41 is provided with a through hole 411, and the upper end of the mold 30 is located in the through hole 411;

[0103] The isolation cover 42 has its lower end pressed against the edge of the through hole 411 on the isolation plate 41 , and its upper end pressed against the edge of the lower end of the avoidance space 51 on the heat preservation cover 50 .

[0104] Specifically, the isolation plate 41 is horizontally arranged and used to isolate the inside and outside of the crucible 20. There is a gap between the isolation plate 41 and the edge of the crucible 20. The isolation plate 41 is conducive to maintaining the temperature in the crucible 20. When the volatiles are not extracted, a certain amount of volatiles remain in the crucible 20, which is conducive to preventing the diffusion of the volatiles. When the volatiles are extracted, the volatiles in the crucible 20 are extracted from the gap. The isolation cover 42 isolates the corresponding space of the mold 30 from the space above the crucible 20. The volatiles in the crucible 20 are first isolated by the isolation plate 41. After the volatiles diffuse out from the inside of the crucible 20, they are isolated by the isolation cover 42 and cannot enter the inside of the isolation cover 42 and the avoidance space 51. The isolation plate 41 is provided with a through hole 411 for the mold 30 to pass through, and the upper end of the mold 30 is penetrated by the through hole 411. The hole wall of the through hole 411 abuts against the mold 30. The mold 30 includes two plates, and a gap is formed between the two plates. The molten liquid flows upward from the gap to the upper end of the mold 30. Ears 412 are provided on both sides of the isolation plate 41. The ears 412 abut against the upper end of the crucible 20. The isolation plate 41 is supported by the crucible 20. The two ears 412 are located on both sides of the width direction of the mold 30.

[0105] The upper end of the isolation cover 42 is larger and the lower end is smaller, and is roughly in a trapezoidal shape. The upper end of the isolation cover 42 is a rectangular frame surrounding the edge of the lower end of the isolation space, and the lower end of the isolation cover 42 is a rectangular frame surrounding the edge of the through hole 411.

[0106] In a preferred implementation of the embodiment of the present invention, Figure 8-Figure 9 As shown, the isolation assembly 40 also includes:

[0107] The support plate 43 has an upper end connected to the lower surface of the isolation plate 41 , and a lower end of the support plate 43 abuts against the bottom of the crucible 20 .

[0108] Specifically, the support plate 43 is used to support the isolation plate 41 and the isolation cover 42 . There may be a plurality of support plates 43 , which are respectively located on both sides of the mold 30 .

[0109] In a preferred implementation of the embodiment of the present invention, the support plate 43 and the mold 30 are made of the same material.

[0110] Specifically, the support plate 43 may be an iridium support plate or an iridium alloy support plate.

[0111] Based on the crystal growth device described in any of the above embodiments, the present invention also provides a preferred embodiment of a crystal growth method:

[0112] The crystal growth method of the embodiment of the present invention comprises the following steps:

[0113] Step S100, during the crystal growth process, exhausting part of the gas in the crucible from the exhaust channel and the first ventilation pipe, and replenishing the gas;

[0114] Specifically, during the crystal growth process, multiple exhaust and gas replenishment are performed. The crystal growth process includes: heating, seeding, necking, shoulder expansion, equal diameter growth, tailing and cooling stages, and exhaust and gas replenishment can be performed at each stage. Especially in the seeding stage, it is necessary to exhaust and replenish gas to facilitate observation of the position of the melt and seed crystal and detection of the temperature of the melt.

[0115] Step S100 specifically includes:

[0116] Step S110, during the crystal growth process, controlling the first valve body to open and the second valve body to close, starting the exhaust device to discharge part of the gas in the crucible, and then closing the first valve body and the exhaust device;

[0117] Step S120, controlling the second valve body to open, replenishing the gas in the shell into the crucible, and then closing the second valve body.

[0118] Specifically, when it is necessary to exhaust gas, the first valve body is controlled to open, the second valve body is controlled to close, and the exhaust device is started to extract gas from the second vent pipe, the first vent pipe, the exhaust channel, and the crucible. After extracting for a first preset time, the first valve body and the exhaust device are closed.

[0119] After the gas is exhausted, the gas is supplemented, the second valve body is controlled to open, and after the gas is supplemented for a second preset time, the second valve body is closed.

[0120] It should be understood that the application of the present invention is not limited to the above examples. For ordinary technicians in this field, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.

Claims

1. A crystal growth device, characterized in that: include: Crucible; a mold, located in the crucible; an isolation assembly, disposed around the mold; A heat-insulating cover, surrounding the crucible and extending to the top of the isolation assembly, wherein a space for avoiding a position and at least one exhaust channel are formed on the heat-insulating cover; Wherein, the avoidance space avoids the crystal grown on the mold; The lower end of the avoidance space is communicated with the interior of the isolation assembly, and the lower end of the exhaust passage is communicated with the exterior of the isolation assembly.

2. The crystal growth device according to claim 1, characterized in that: The crystal growth apparatus further comprises: a shell, wherein the crucible is located in the shell; a first ventilation pipe, wherein a first end of the first ventilation pipe is communicated with an upper end of the exhaust passage, and a second end of the first ventilation pipe extends outside the housing; A seed crystal rod is arranged on the shell and passes through the upper end of the avoidance space.

3. The crystal growth device according to claim 2, characterized in that: The crystal growth apparatus further comprises: A three-way pipe, a first end of which is connected to the second end of the first ventilation pipe; A first valve body, disposed at the second end of the three-way pipe; A second valve body, disposed at the third end of the three-way pipe; A second ventilation pipe, two ends of which are respectively connected to the first valve body and the air extraction device; A third ventilation pipe, a first end of which is connected to the second valve body, and the third ventilation pipe extends into the shell.

4. The crystal growth device according to claim 2, characterized in that: At least one observation window is provided on the housing; At least one observation channel is provided on the heat preservation cover, and the observation channel is not connected with the exhaust channel; Wherein, two ends of the observation channel point to the mold and the observation window respectively.

5. The crystal growth device according to claim 4, characterized in that: The thermal insulation cover comprises: A cylinder, located in the shell and surrounding the crucible; A first cover body group, located on the cylinder body; At least one second cover group, located on the cylinder; A cover body group, located on the cover body group; Wherein, the observation channel is formed in the first cover group; The avoidance space is formed in the first cover body group, the second cover body group and the cover body group; The exhaust passage is formed in the first cover body group, the second cover body group, and the lid body group.

6. The crystal growth device according to claim 1, characterized in that The isolation assembly comprises: The isolation plate is provided with a through hole, and the upper end of the mold is located in the through hole; An isolation cover, wherein the lower end of the isolation cover abuts against the edge of the through hole on the isolation plate, and the upper end of the isolation cover abuts against the edge of the lower end of the avoidance space on the heat-insulating cover.

7. The crystal growth device according to claim 6, characterized in that: The isolation assembly further comprises: A support plate, wherein the upper end of the support plate is connected to the lower surface of the isolation plate, and the lower end of the support plate is against the bottom of the crucible.

8. The crystal growth device according to claim 7, characterized in that: The support plate and the mold are made of the same material.

9. A crystal growth method according to any one of claims 2 to 8, characterized in that: Includes steps: During the crystal growth process, part of the gas in the crucible is exhausted from the exhaust channel and the first ventilation pipe, and gas is replenished.

10. The crystal growth method according to claim 9, characterized in that: During the crystal growth process, part of the gas in the crucible is discharged from the exhaust channel and the first vent pipe, and the gas is replenished, which specifically includes: During the crystal growth process, the first valve body is controlled to be opened and the second valve body is controlled to be closed, and after the exhaust device is started to discharge part of the gas in the crucible, the first valve body and the exhaust device are closed; The second valve body is controlled to open, and after the gas in the shell is replenished into the crucible, the second valve body is closed.

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