Oxide single crystal thick film growth device, growth system and growth method

Abstract

The invention relates to the technical field of crystal growth, in particular to an oxide single crystal thick film growth device, a growth system and a growth method. The oxide single crystal thick film growth device comprises a pipe body, a metal source reactor, a bottom support, a conveying unit and a gas supply unit. The growth device is arranged on a furnace body, and forms an oxide single crystal thick film growth system together with a flange, a gas supply device, a vacuum pump system and a driver. In the growth system, an oxide single crystal thick film growth method is utilized, the oxide single crystal can grow at a high speed at a temperature far lower than the melting point of the oxide, and the raw material bearing device does not need to be made of a temperature-resistant and oxidation-resistant noble metal material and only utilizes a low-cost common material. The growth method is simple in step, the grown oxide single crystal thick film is good in crystallization quality and can adapt to large-scale production, and the production cost of an oxide single crystal growth system and the production cost of the oxide single crystal thick film are greatly reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of crystal growth, and in particular to an oxide single crystal thick film growth device, a growth system and a growth method. Background Art

[0002] With the rapid development of new energy, rail transit, smart grid and other fields, people are increasingly in need of semiconductor power devices that work at high voltage and high power. As a new type of ultra-wide bandgap semiconductor material, oxide single crystals such as gallium oxide and tin oxide have become a hot topic for researchers because of their large breakdown field strength and good thermal stability. They are very suitable for solar-blind ultraviolet detection, high-power electronic equipment and other fields.

[0003] The growth of oxide single crystal thick films is the basis for the development of oxide single crystal-based power devices and integrated circuits. Due to the high melting point of oxides and the particularity of oxide materials themselves, they are very easy to decompose into oxygen and low-valent metal oxides or even metal elements under high-temperature oxygen-deficient conditions. The growth of oxide single crystals using the melting method (CZ, EFG, VB) requires a high-temperature oxygen-rich environment, and the crucible selection is narrow. Only precious metals such as iridium and platinum-rhodium alloys can withstand corrosion in such a high-temperature oxygen-rich environment.

[0004] However, since iridium and rhodium are relatively rare, their costs are much higher than gold. The production cost of a 4-inch crucible can be as high as several million RMB, which makes the production cost of the crucible high, and in turn leads to high production costs for the crystal growth system. Summary of the invention

[0005] The purpose of the present invention is to overcome the above technical deficiencies, and to provide an oxide single crystal thick film growth device, a growth system and a growth method, so as to solve the technical problem of high production cost of oxide single crystal thick film growth system in the prior art.

[0006] In order to achieve the above technical objectives, the present invention adopts the following technical solutions: In a first aspect, the present invention provides an oxide single crystal thick film growth device, comprising: A tube body, wherein the tube body is provided with a metal source region and a growth region; A metal source reactor, which is disposed in the metal source region and is used for reacting metal oxide with metal element to generate metal source gas; A bottom support, the bottom support is arranged in the growth area and is provided with a substrate; a conveying unit, the conveying unit being connected to the metal source reactor and being used for conveying the metal source gas in the metal source reactor toward the substrate; A gas supply unit is provided on the tube body and is used to supply oxygen source gas to the substrate so as to grow an oxide single crystal thick film on the surface of the substrate through the reaction between the oxygen source gas and the metal source gas.

[0007] Preferably, the metal source reactor and the substrate are coaxially arranged, and the conveying unit includes an air supply pipe and an output pipe. The air supply pipe is fixed to a side of the metal source reactor away from the substrate and is coaxially arranged with the output pipe, and is used for blowing inert gas toward the direction of the output pipe. The output pipe is installed on a side of the metal source reactor close to the substrate, and is used for guiding the inert gas to carry the metal source gas in the metal source reactor and convey it toward the direction of the substrate.

[0008] Preferably, the distance between the outlet of the output pipe and the substrate is between 50 mm and 70 mm, the outer diameter of the air supply pipe is between 12 mm and 16 mm, and the outer diameter of the output pipe is between 18 mm and 22 mm.

[0009] Preferably, the gas supply unit includes an air inlet cavity and a compression channel, the air inlet cavity is located between the gas supply pipe and the tube body, and is used to introduce oxygen source gas, the compression channel is located between the metal source reactor and the tube body and is connected to the air inlet cavity, and is used to guide the oxygen source gas toward the substrate.

[0010] Preferably, the oxide single crystal thick film growth device further comprises a driving rod connected to the base, the substrate is placed on the side of the base close to the metal source reactor, and the driving rod is fixed to the side of the base away from the metal source reactor to drive the base to rotate.

[0011] Preferably, the inner diameter of the tube body is between 65 mm and 75 mm, the outer diameter of the metal source reactor is between 35 mm and 45 mm, and the diameter of the base is between 50 mm and 60 mm.

[0012] In a second aspect, the present invention further provides an oxide single crystal thick film growth system, comprising: Oxide single crystal thick film growth device; A first flange is installed on a side of the tube body close to the metal source area; A second flange is installed on a side of the tube body close to the growth area; A furnace body, carrying the oxide single crystal thick film growing device, and used for heating the oxide single crystal thick film growing device; A gas supply device, connected to the first flange, for supplying oxygen source gas and inert gas to the oxide single crystal thick film growth device; A vacuum pump system, comprising a vacuum pump and a gas pressure control device, for evacuating and controlling the gas pressure of the oxide single crystal thick film growth device; A driver is connected to the driving rod via a coupling.

[0013] Preferably, the first flange is provided with a first air inlet and a second air inlet, wherein the first air inlet is connected to the air supply pipe, the second air inlet is connected to the air inlet cavity, the second flange is provided with an air outlet, and the air outlet is connected to the tube body, the first flange and the second flange are respectively provided with a first circulating water cooling component and a second circulating water cooling component, and the first circulating water cooling component and the second circulating water cooling component are used to pass circulating water to cool the first flange and the second flange.

[0014] In a third aspect, the present invention further provides a method for growing an oxide single crystal thick film, which is performed by the oxide single crystal thick film growth system, and comprises the following steps: Filling metal oxide and metal element into the metal source reactor; The oxide single crystal thick film growth device is subjected to vacuum treatment and pressure control by the vacuum pump system so that the pressure inside the oxide single crystal thick film growth device reaches the limit pressure of the vacuum pump, and the oxide single crystal thick film growth device is heated by the furnace body so that the temperature is raised from room temperature to 150° C. to 200° C.; Filling the oxide single crystal thick film growth device with inert gas to make the oxide single crystal thick film growth device at near normal pressure, and continuing to heat the oxide single crystal thick film growth device through the furnace body to raise the temperature of the growth zone to 900° C. to 1400° C. and the temperature of the metal source zone to 1100° C. to 1500° C.; The temperatures of the metal source zone and the growth zone are kept unchanged, and an inert gas and an oxygen source gas are introduced into the oxide single crystal thick film growth device. The inert gas directionally transports the metal source gas formed by the reaction of the metal oxide and the metal element after heating to the surface of the substrate, fully mixes with the oxygen source gas, and reacts on the surface of the substrate to grow an oxide single crystal thick film.

[0015] Preferably, the gas flow rate into the first gas inlet is controlled to be 50-300 sccm, the gas flow rate into the second gas inlet is controlled to be 50-200 sccm, and the vacuum pump system is controlled to make the gas pressure in the oxide single crystal thick film growth device be 0.8×10 5 Pa-1.2×10 5 Pa.

[0016] Compared with the prior art, the oxide single crystal thick film growth device, growth system and growth method provided by the present invention have significant advantages. The oxide single crystal thick film growth device is provided with a tube body, a metal source reactor, a bottom support, a conveying unit and a gas supply unit. The tube body is provided with a metal source area and a growth area. The metal source reactor is provided in the metal source area. The metal source reactor can provide metal oxides and metal elements to react to generate metal source gas. The bottom support is provided in the growth area and is provided with a substrate. The substrate can be used for the growth of oxide single crystal thick films. The oxide single crystal thick film growth system includes the above-mentioned oxide single crystal thick film growth device, a first flange, a second flange, a furnace body, a gas supply device, a vacuum pump system and a driver. The growth system is provided with a first flange to construct a dual gas inlet; the second flange is provided to realize the exhaust function; the gas supply device is connected to the flow control device, and the gas is supplied to the oxide single crystal thick film growth device by connecting the first flange and regulating the gas flow; the vacuum pump is connected to the air pressure control device to form a vacuum pump system, and the air pressure in the oxide single crystal thick film growth device is regulated by connecting the second flange; the driver drives the coupling and finally drives the substrate to rotate, and the oxide single crystal thick film growth device is arranged in the furnace body to form the oxide single crystal thick film growth system structure. During the growth of the oxide single crystal thick film, the metal oxide and the metal element are filled into the metal source reactor, and the furnace body heats each section of the oxide single crystal thick film growth device. The metal oxide and the metal element in the metal source reactor react with each other under the heating of the furnace body to generate the metal source gas. The conveying unit is connected to the metal source reactor, and the metal source gas can be conveyed toward the substrate, and the gas supply unit is arranged in the pipe body, and the oxygen source gas can be conveyed toward the substrate. The metal source gas and the oxygen source gas are uniformly mixed on the surface of the substrate and react to grow the oxide single crystal thick film. Since the metal source gas is a gaseous metal suboxide or a metal suboxide vapor with a high saturated vapor pressure generated by the reaction of a metal oxide with a metal element, the reaction temperature of the metal oxide with the metal element is much lower than the melting point of the metal oxide, and its raw material carrier does not need to be made of heat-resistant and oxidation-resistant precious metal materials, but can be made of ordinary low-cost ceramic materials. The oxide single crystal growth equipment of the present invention is simple and inexpensive, and can be simply modified and built on the basis of an ordinary tubular furnace and crucible accessories. The oxide single crystal thick film growth system thus formed only costs about RMB 100,000, which greatly reduces the manufacturing cost of the oxide single crystal growth equipment. The steps for growing oxide single crystals using the equipment are simple, and the grown oxide single crystal thick film has good crystal quality and a fast growth rate, and can be adapted to large-scale production, further reducing the production cost of oxide single crystal thick films. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 is a schematic diagram of an oxide single crystal thick film growth device provided by an embodiment of the present invention; Figure 2 It is a schematic structural diagram of a metal source reactor and a conveying unit of an oxide single crystal thick film growth device provided in an embodiment of the present invention; Figure 3 This is a schematic structural diagram of a substrate, a bottom support and a driving rod of an oxide single crystal thick film growth device provided by an embodiment of the present invention; Figure 4 This is a flow field diagram of an oxide single crystal thick film growth device provided by an embodiment of the present invention with a channel gap of 5 mm (the metal source reactor is located on the upper side of the substrate); Figure 5 This is a flow field diagram of an oxide single crystal thick film growth device provided by an embodiment of the present invention with a channel gap of 10 mm (the metal source reactor is located on the upper side of the substrate); Figure 6 This is a flow field diagram of an oxide single crystal thick film growth device provided by an embodiment of the present invention with a channel gap of 15 mm (the metal source reactor is located on the upper side of the substrate); Figure 7 This is a flow field diagram of another oxide single crystal thick film growth device provided by an embodiment of the present invention (the metal source reactor is located at the lower side of the substrate); Figure 8 is a schematic diagram of an oxide single crystal thick film growth system provided by an embodiment of the present invention; Fig. 9 It is a structural schematic diagram of an oxide single crystal thick film growth device, a first flange, a second flange and a furnace body in an oxide single crystal thick film growth system provided by an embodiment of the present invention; Fig.10 is a schematic diagram of the structure of a first flange in an oxide single crystal thick film growth system provided by an embodiment of the present invention; Fig.11 It is a flow chart of the oxide single crystal thick film growth method provided in an embodiment of the present invention.

[0018] Description of reference numerals: 10—tube body 11—metal source area 12—growth area 20—metal source reactor 30—bottom support 31—substrate 32 - driving rod 40 - conveying unit 41 - output pipe 42—air delivery pipe 50—air supply unit 51—air intake chamber 52—compression channel 60—driver 70—first flange 71a—first air inlet 71b—second air inlet 72—first circulating water cooling element 73 - first sealing ring 74 - first metal ring 75 - second sealing ring 76 - second metal ring 77 - nested sealing structure 77a - metal ring 77b—Rubber sealing ring 78—Extrusion piece 79—Extrusion sealing ring 80—Second flange 81—Air outlet 82—Second circulating water cooling element 83 - coupling 90 - furnace body 91 - gas supply device 92 - flow control device 93 - vacuum pump 94 - air pressure control device 95—circulating water supply device 96—hose 10a—oxygen source gas flow field 20a—Metal source gas flow field DETAILED DESCRIPTION In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0019] Since the temperature required for the growth of existing oxide single crystals such as Ga2O3 and SnO2 is relatively high, a high-temperature and oxidation-resistant iridium or platinum-rhodium alloy carrier is required as a carrier for growth during the single crystal growth process, resulting in a relatively high manufacturing cost of the growth system. In order to solve the technical problem of high production cost of oxide single crystal growth systems, the present invention provides an oxide single crystal thick film growth device, a growth system and a growth method, which reduces the temperature required for oxide single crystal growth, avoids the use of a carrier made of precious metals, and solves the technical problem of high production cost of oxide single crystal growth systems in the prior art.

[0020] like Figure 1-7 As shown, an embodiment of the present invention provides an oxide single crystal thick film growth device, including a tube body 10, a metal source reactor 20, a bottom support 30, a conveying unit 40 and a gas supply unit 50, wherein the tube body 10 is provided with a metal source region 11 and a growth region 12; the metal source reactor 20 is arranged in the metal source region 11, and is used for supplying metal oxides and metal elements to react to generate gaseous suboxide metal sources or suboxide metal source vapor with a high saturated vapor pressure; the bottom support 30 is arranged in the growth region 12, and the bottom support 30 is provided with a substrate 31; the conveying unit 40 is connected to the metal source reactor 20, and is used for conveying the metal source gas in the metal source reactor 20 toward the substrate 31; the gas supply unit 50 is arranged in the tube body 10, and is used for supplying oxygen source gas to the substrate 31, so as to grow an oxide single crystal thick film on the surface of the substrate 31 through the reaction of the oxygen source gas and the metal source gas.

[0021] Preferably, the tube body 10, the metal source reactor 20, the base 30, the conveying unit 40 and the gas supply unit 50 are all made of a simple, inexpensive corundum material with high thermal stability.

[0022] Preferably, the metal oxide and the metal element are a uniform mixture of metal oxide powder and its corresponding metal element particles which are homogeneous with the oxide single crystal thick film to be grown.

[0023] Specifically, the oxide single crystal thick film growth device can be providedβ -Ga2O3 single crystal thick film, SnO2 single crystal thick film, In2O3 single crystal thick film and other oxide single crystal thick film growth. β When a Ga2O3 single crystal thick film is grown, a metal element Ga with a purity of more than 99.99% and a Ga2O3 powder with a purity of more than 99.99% are fully mixed and filled into a metal source reactor 20. The metal element Ga and the Ga2O3 powder react under a high temperature condition of 1100°C to 1500°C to generate a metal source gas Ga2O as a Ga source. The metal source gas Ga2O is transported toward the substrate 31 through a transport unit 40. The metal source gas Ga2O at the substrate 31 reacts with the oxygen source gas supplied by the gas supply unit 50 under a high temperature condition of 900°C to 1400°C to generate Ga2O3, thereby achieving β -Ga2O3 single crystal thick film growth; when growing SnO2 single crystal thick film, metal single substance Sn powder with a purity of more than 99.99% and SnO2 powder with a purity of more than 99.99% are filled into the metal source reactor 20 after being fully mixed, the metal single substance Sn powder and SnO2 powder react under high temperature conditions of 1100℃~1500℃ to generate SnO vapor with high saturated vapor pressure as Sn source, the metal source gas SnO is transported toward the substrate 31 through the transport unit 40, the metal source gas SnO at the substrate 31 reacts with the oxygen source gas supplied by the gas supply unit 50 under high temperature conditions of 900℃~1400℃ to generate SnO2, thereby realizing the growth of SnO2 single crystal thick film; the growth of In2O3 single crystal thick film is the same as the growth principle of β-Ga2O3 single crystal thick film and SnO2 single crystal thick film.

[0024] Among them, in the process of mixing the metal element Ga and Ga2O3 powder, a certain mass of Ga2O3 powder is weighed using weighing paper and an electronic balance; the Ga contained in the reagent bottle is slightly heated (the melting point of metal Ga is 29.76 degrees Celsius) to slightly melt the solid Ga, and the liquid Ga is sucked and transferred using a pipette; the mixture of Ga droplets and Ga2O3 powder is stirred using a ceramic rod until Ga is dispersed from large droplets into small droplets coated by Ga2O3 powder, ensuring sufficient contact between Ga and Ga2O3; in the process of mixing the metal element Sn and SnO2 powder, a certain mass of Sn powder with a particle size of less than 30μm and SnO2 powder with a particle size of less than 70nm are weighed using weighing paper and an electronic balance; the Sn powder and SnO2 powder are ground using a mortar until they are evenly mixed; the mixing process of the metal element In and In2O3 powder is the same as the mixing process of the metal element Sn and SnO2 powder.

[0025] Since the metal source gas is a gaseous metal suboxide or a metal suboxide vapor with a high saturated vapor pressure generated by the reaction of a metal oxide with a metal element, and the reaction temperature is much lower than the melting point of the metal oxide, its raw material carrier does not need to be made of heat-resistant and oxidation-resistant precious metal materials, but can be made of ordinary low-cost ceramic materials. This makes the oxide single crystal growth device provided in the embodiment of the present invention simple and inexpensive, and can be simply modified and built on the basis of an ordinary tubular furnace and crucible accessories. The oxide single crystal thick film growth system thus formed only costs about RMB 100,000, which greatly reduces the manufacturing cost of the oxide single crystal growth equipment. The steps for growing oxide single crystals using this equipment are simple, and the grown oxide single crystal thick film has good crystal quality and a fast growth rate. It can adapt to large-scale production, further reducing the production cost of oxide single crystal thick films.

[0026] For the convenience of description, the following β -Taking the growth of Ga2O3 single crystal thick film as an example: In this embodiment, the oxygen source gas may be a gas such as O2, CO2, H2O, NO2, SO2, etc. that can oxidize the metal source gas under high temperature conditions. The inert gas may be a gas such as Ar, N2, etc. that is inactive under high temperature conditions and cannot react with the metal source gas. Preferably, high-purity CO2 that is non-toxic, harmless, non-combustible, safe and inexpensive is used as the oxygen source gas.

[0027] Specifically, the gas supply unit 50 supplies CO2 as an oxygen source gas for the growth of a single crystal thick film to the substrate 31. CO2 has a strong oxidizing property relative to O2, and can exhibit both oxidizing and reducing properties at different temperature ranges. For example, in the growth zone 12 with a lower temperature, CO2 can oxidize Ga2O to Ga2O3 to grow β -Ga2O3 single crystal thick film, at this time CO2 shows oxidizing properties; in the metal source area 11 with higher temperature, since the Gibbs free energy of the reaction between CO2 and Ga2O to generate Ga2O3 increases positively with temperature, CO2 can hardly oxidize Ga2O. At this time, CO2 shows reducing properties, so that CO2 hardly reacts with Ga2O in the metal source area 11 and the metal source reactor 20, thereby ensuring the gas phase transport of Ga2O and improving the utilization rate of raw materials.

[0028] In this embodiment, the metal source reactor 20 is a crucible made of corundum material, and the two sides of the crucible are fixed to the air supply pipe 42 by thin corundum rods, the thin corundum rods are 50 mm long and 5 mm in diameter, and mounting holes with a diameter of 5 mm are provided on both sides of the crucible. The two ends of the thin corundum rods are blocked and fixed to the mounting holes, and the thin corundum rods are inserted and fixed to the inner wall of the air supply pipe 42. Preferably, the conveying unit 40 and the metal source reactor 20 are no longer connected and fixed using thin corundum rods, but are integrally sintered and formed by a mold to form a corundum ceramic part integrating the conveying unit 40 and the metal source reactor 20.

[0029] Preferably, if Figure 1-2 As shown in Figures 4-7, the metal source reactor 20 and the substrate 31 are coaxially arranged, and the conveying unit 40 includes a gas supply pipe 42 and an output pipe 41. The metal source reactor 20 and the substrate 31 are coaxially arranged. The gas supply pipe 42 is fixed to the side of the metal source reactor 20 away from the substrate 31 and is coaxially arranged with the output pipe 41, and is used to blow the inert gas toward the output pipe 41. The output pipe 41 is installed on the side of the metal source reactor 20 close to the substrate 31, and is used to guide the inert gas to carry the metal source gas in the metal source reactor 20 and transport it toward the substrate 31. Specifically, in a high temperature environment of 1100°C to 1500°C, Ga in the metal source reactor 20 is liquid, Ga2O3 is solid, and Ga2O generated by the reaction is gaseous. The gas supply pipe 42 blows inert gas toward the output pipe 41 , driving Ga2O in the metal source reactor 20 to enter the output pipe 41 , and further driven by the inert gas to flow toward the substrate 31 , thereby realizing the transportation of the metal source gas Ga2O toward the substrate 31 .

[0030] In this embodiment, the tube body 10 can be placed in any form such as vertical placement or tilted placement, and the growth region 12 can be located in any direction such as above, below or horizontally in the metal source region 11. Since the temperature required for the growth of the oxide single crystal thick film is relatively low, the tube body 10 can use a relatively low-cost corundum tube, thereby reducing the production cost of the growth system.

[0031] If the metal source region 11 is located on the upper side of the growth region 12, the metal source reactor 20 is located on the upper side of the substrate 31. Due to the law of natural convection, the density of high-temperature gas is lower than that of low-temperature gas, and it has an upward transport tendency. The high-temperature metal source region 11 is more likely to be formed on the upper side of the furnace body 90. Therefore, setting the metal source region 11 on the upper side of the growth region 12 is more conducive to forming the high-temperature metal source region 11 and the low-temperature growth region 12 in the tube body 10. Since the gas pressure distribution from the first gas inlet 71a or the second gas inlet 71b to the gas outlet 81 is from high to low, it is convenient for CO2 to flow to the substrate 31 with low gas pressure on the lower side, while reducing the flow to the output pipe 41, further avoiding the reflux of CO2 into the metal source reactor 20 to oxidize the metal element and reduce the raw material utilization rate.

[0032] If the metal source region 11 is located at the lower side of the growth region 12, the metal source reactor 20 is located at the lower side of the substrate 31. Due to the law of natural convection, the density of high-temperature gas is lower than that of low-temperature gas, and it has an upward transport tendency. The metal source region 11 is arranged at the lower side of the growth region 12, and the gas flow is introduced from bottom to top, which conforms to this tendency. Figure 7The flow field diagram of the oxide single crystal thick film growth device when the metal source reactor 20 is located at the lower side of the substrate 31 can show that the oxygen source gas flow field 10a and the metal source gas flow field 20a are more evenly distributed; and because the surface of the substrate 31 is facing downward, dust or small solid particles fall downward under the action of gravity instead of being adsorbed on the substrate 31. Therefore, the surface of the substrate 31 has higher cleanliness during the growth process, and the metal oxide single crystal thick film grown on the surface of the substrate 31 with higher cleanliness has fewer defects and higher crystallization quality.

[0033] Preferably, the distance between the mouth of the output tube 41 and the substrate 31 is between 50 mm and 70 mm. The outer diameter of the gas supply pipe 42 is between 12 mm and 16 mm, and the outer diameter of the output tube 41 is between 18 mm and 22 mm. Among them, the wall thickness of the output tube 41 and the gas supply pipe 42 are both 2-3 mm. Specifically, the upper end of the output tube 41 extends 30 mm into the interior of the metal source reactor 20 and forms a raw material groove with the inner wall of the metal source reactor 20, and the lower end of the output tube 41 extends 50 mm from the metal source reactor 20 as an output port for outputting the metal source gas Ga2O, which is convenient for guiding the metal source gas Ga2O. The distance between the outlet of the output tube 41 and the substrate 31 is between 50mm and 70mm. If the distance between the substrate 31 and the outlet of the output tube 41 is too close, it is easy to cause the oxygen source gas and the metal source gas to be unable to be fully mixed, and the growth rate is reduced. If it is too far, a large amount of metal source gas will react with the oxygen source gas on the inner wall of the tube body 10 and deposit, and the raw material utilization rate will be reduced. Therefore, the distance between the outlet of the output tube 41 and the substrate 31 is set between 50mm and 70mm, which can improve the raw material utilization rate while ensuring the high growth rate of the oxide single crystal thick film. The outer diameter of the air supply pipe 42 is between 12mm and 16mm, which not only ensures that the inert gas can be normally transported through the air supply pipe 42, but also reduces the space occupied, so that a larger volume of insulation material can be selectively set to enhance the insulation effect. By setting the outer diameter of the output tube 41 between 18mm and 22mm, it is convenient to load the single metal Ga and Ga2O3 powder into the metal source reactor 20 through the output tube 41. By setting the outer diameter of the output pipe 41 larger than the outer diameter of the air supply pipe 42, on the one hand, it is prevented that the inert gas transported by the air supply pipe 42 flows into the metal source reactor in large quantities and forms turbulence, which cannot effectively drive the metal source gas Ga2O to be output from the output pipe 41, but instead lifts up the filled Ga2O3 powder to be output from the output pipe 41, and falls on the surface of the substrate 31, resulting in a decrease in its cleanliness; on the other hand, it can prevent the output pipe 41 from growing too many metal oxide crystals at the mouth of the output pipe 41 to block the mouth, resulting in the inability of the metal source gas to be output through the output pipe 41. The transport unit 40 and the metal source reactor 20 are both bonded by high-temperature inorganic adhesive. While fixing the output pipe 41 and the air supply pipe 42, the metal source gas flow field 20a and the oxygen source gas flow field 10a can be completely separated, so as to prevent the oxygen source gas from penetrating into the metal source reactor 20 through the gap, oxidizing the metal element and reducing the raw material utilization rate. Preferably, the conveying unit 40 and the metal source reactor 20 are no longer bonded by high-temperature inorganic adhesive, but are formed by integrally sintering through a mold to form a seamless corundum ceramic part in which the conveying unit 40 and the metal source reactor 20 are integrated.

[0034] In this embodiment, the gas supply unit 50 may be any gas supply structure such as a gas supply pipe that can deliver the oxygen source gas to the substrate 31 .

[0035] Preferably, if Figure 1-2As shown in Figures 4-7, the gas supply unit 50 includes an air inlet cavity 51 and a compression channel 52. The air inlet cavity 51 is located between the air supply pipe 42 and the tube body 10 and is used to introduce oxygen source gas. The compression channel 52 is located between the metal source reactor 20 and the tube body 10 and is connected to the air inlet cavity 51 to guide the oxygen source gas toward the substrate 31. Specifically, during the growth of the oxide single crystal thick film, the oxygen source gas is introduced into the air inlet cavity 51, and then enters the compression channel 52 through the air inlet cavity 51. After passing through the compression channel 52, it flows toward the bottom support 30, and then reacts with the metal source gas on the substrate 31. Through the above structure, the metal source gas flow field 20a can be isolated from the oxygen source gas flow field 10a while simplifying the oxygen source gas delivery structure, so as to avoid a large amount of oxygen source gas from entering the metal source reactor 20 to oxidize the metal element, and to avoid a large amount of metal oxide crystals from being deposited and grown in non-target areas, thereby improving the utilization rate of raw materials.

[0036] Preferably, the oxide single crystal thick film growth device further includes a driving rod 32 connected to the base 30. Specifically, the driving rod 32 has a diameter of 16 mm and a length of 500 mm. The substrate 31 is placed on the side of the base 30 close to the metal source reactor 20; the driving rod 32 is fixed to the side of the base 30 away from the metal source reactor 20 to drive the base 30 to rotate, and finally drive the substrate 31 to rotate, so that the metal source gas and the oxygen source gas on the surface of the substrate 31 are fully mixed and evenly distributed, so as to improve the utilization rate of the raw materials and make the thickness of the grown oxide single crystal thick film more uniform.

[0037] In this embodiment, the inner diameter of the tube body 10, the outer diameter of the metal source reactor 20, the diameter of the base 30, the distance between the metal source reactor 20 and the base 30 and other dimensions can be adaptively set according to the volume of the thick film grown.

[0038] Preferably, the inner diameter of the tube body 10 is between 65mm and 75mm, the outer diameter of the metal source reactor 20 is between 35mm and 45mm, and the diameter of the base 30 is between 55mm and 65mm. The height of the metal source reactor 20 is 60mm-80mm. Specifically, through the above settings, the channel gap of the compression channel 52 between the metal source reactor 20 and the inner wall of the tube body 10 can be 15mm, and the spacing between the base 30 and the inner wall of the tube body 10 can be 5mm. By setting this spacing and controlling the gas flow rate of the output pipe 41 and the compression channel 52 at the same time, the oxygen source gas introduced through the compression channel 52 can be closer to the center of the base 30, thereby improving the uniformity of thick film growth. Figure 4-6 As shown, Figure 4-6The distribution of the oxygen source gas flow field 10a and the metal source gas flow field 20a when the channel gap of the compression channel 52 between the metal source reactor 20 and the inner wall of the tube body 10 is 5mm, 10mm and 15mm respectively. From the distribution of the oxygen source gas flow field 10a, it can be seen that in the process of the channel gap of the compression channel 52 gradually increasing from 5mm, 10mm to 15mm, the oxygen source gas flow field 10a flows from the inner wall of the tube body 10 downward and almost does not flow to the substrate 31, and gradually approaches the center of the bottom support 30, so that the oxygen source gas and the metal source gas are mixed more fully, the raw material utilization rate is higher, and the growth of the oxide single crystal thick film is more uniform. If the channel gap is further increased to 20mm, the outer diameter of the metal source reactor will be only 25mm-35mm, and the groove formed by the metal source reactor 20 and the output pipe 41 will hardly be able to accommodate metal oxides and metal elements, and the metal source gas cannot be effectively provided. Therefore, when the channel gap of the compression channel 52 is 15 mm, it can not only take into account the uniformity of the flow field, but also ensure that the metal source reactor 20 can accommodate enough raw materials.

[0039] like Figure 8-10 As shown, an embodiment of the present invention further provides an oxide single crystal thick film growth system, comprising the above-mentioned oxide single crystal thick film growth device, a driver 60, a first flange 70, a second flange 80 and a furnace body 90. The driver 60 is connected to the drive rod 32 through a coupling 83, and the driver 60 drives the coupling 83 and finally drives the substrate 31 to rotate. By setting the first flange 70, the growth system can construct a dual gas path intake; by setting the second flange 80, the exhaust function is realized. The oxide single crystal thick film growth device is arranged in the furnace body 90 to form an oxide single crystal thick film growth system structure. Through the setting of the oxide single crystal thick film growth system structure, the conditions required for the growth of oxide single crystal thick films can be provided.

[0040] In this embodiment, the driver 60 is located outside the second flange 80, and its shaft is connected to the coupling 83. The driving rod 32 is located inside the tube body 10 and connected to the coupling 83. The driver 60 can drive the coupling 83 to rotate, thereby driving the driving rod 32 to rotate, and finally driving the substrate 31 placed on the base 30 to rotate. During the growth of the single crystal thick film, the driver 60 can make the growth of the single crystal thick film more uniform by driving the substrate 31 to rotate, thereby improving the growth quality of the single crystal thick film. Preferably, the driver 60 is a motor.

[0041] In this embodiment, the first flange 70 is provided with a first air inlet 71a and a second air inlet 71b, wherein the first air inlet 71a is connected to the air supply pipe 42, and the second air inlet 71b is connected to the air inlet cavity 51, forming a dual air inlet. The second flange 80 is provided with an air outlet 81, and the air outlet 81 is connected to the tube body 10. The first flange 70 and the second flange 80 are respectively provided with a first circulating water cooling component 72 and a second circulating water cooling component 82, which can cool the first flange 70 and the second flange 80 through circulating water.

[0042] Specifically, Figure 8-10As shown, if the metal source reactor 20 is located on the upper side of the substrate 31, the first flange 70 and the second flange 80 are respectively installed at the upper and lower ends of the tube body 10. The first flange 70 is provided with a first air inlet 71a and a second air inlet 71b. The first air inlet 71a is connected to the air supply pipe 42 for supplying inert gas into the air supply pipe 42, and the second air inlet 71b is connected to the air inlet cavity 51 for supplying oxygen source gas into the air inlet cavity 51. The tube body 10 and the first flange 70 are sealed by two first sealing rings 73 and a first metal ring 74 located between the two first sealing rings 73. The first flange 70 is equipped with two sets of first circulating water cooling parts 72, and each first circulating water cooling part 72 is provided with a water inlet and a water outlet. The first sealing ring 73 is located on the inner side of the first circulating water cooling part 72 close to the tube body 10, and the first sealing ring 73 can be cooled to ensure the air tightness between the tube body 10 and the first flange 70. The air supply pipe 42 is sealed between one end away from the metal source reactor 20 and the first flange 70 by two second sealing rings 75 and a second metal ring 76 located between the two second sealing rings 75. The second sealing ring 75 is located inside the first circulating water-cooling component 72 to ensure the air tightness between the first air inlet 71a and the air supply pipe 42. The first circulating water-cooling component 72 can ensure the air tightness between the first air inlet 71a and the air supply pipe 42 by cooling the second sealing ring 75. The first circulating water-cooling component 72 is away from the pipe body. 10 is provided with a threaded structure at one end, and the connector of the first air inlet 71a is sleeved on one side of the threaded structure of the first circulating water-cooling component 72 and is connected to the first circulating water-cooling component 72 by threads; a nested sealing structure 77 is provided between the first circulating water-cooling component 72 and the air inlet connector provided with the second air inlet 71b, and the nested sealing structure 77 includes a metal ring 77a and a rubber sealing ring 77b sleeved on the metal ring 77a, so as to seal the gap between the first circulating water-cooling component 72 and the air inlet connector. An extrusion piece 78 is arranged between the second sealing ring 75 and the connecting head of the first air inlet 71a. The extrusion piece 78 is a metal sleeve. When the connecting head of the first air inlet 71a is threadedly connected to the first circulating water-cooling part 72, the extrusion piece 78 can squeeze the second sealing ring 75 and the second metal ring 76, thereby sealing the gap between the end of the air supply pipe 42 away from the metal source reactor 20 and the first circulating water-cooling part 72; an extrusion sealing ring 79 is arranged between the extrusion piece 78 and the connecting head of the first air inlet 71a. The extrusion sealing ring 79 is a rubber part. When the connecting head of the first air inlet 71a is tightened to the first circulating water-cooling part 72, the extrusion piece 78 can also squeeze the extrusion sealing ring 79, thereby sealing the gap between the end of the air supply pipe 42 away from the metal source reactor 20 and the connecting head of the first air inlet 71a. Through the above arrangement, the gas in the air supply pipe 42 is only the inert gas passed into the first air inlet 71a, the gas in the air inlet chamber 51 is only the oxygen source gas passed into the second air inlet 71b, and the inert gas passed into the air supply pipe 42 and the oxygen source gas passed into the air inlet chamber 51 are not connected to each other.

[0043] The second flange 80 is provided with an air outlet 81, which is connected to the interior of the tube body 10 and is used to discharge unreacted oxygen source gas and metal source gas out of the oxide single crystal thick film growth device. The second flange 80 is equipped with two sets of second circulating water cooling parts 82, each of which is provided with a water inlet and a water outlet. The second circulating water cooling parts 82 away from the tube body 10 cool the driver 60 through water circulation. The second circulating water cooling parts 82 close to the tube body 10 cool the sealing ring between the tube body 10 and the second flange 80 through water circulation to ensure the airtightness between the tube body 10 and the second flange 80.

[0044] The furnace body 90 includes a furnace chamber and a heating element, which is used to provide the temperature conditions required by the oxide single crystal thick film growth device. The oxide single crystal thick film growth device is installed in the furnace body 90 .

[0045] like Figure 8 As shown, the oxide single crystal thick film growth system also includes a gas supply device 91, a flow control device 92, a vacuum pump 93, an air pressure control device 94 and a hose 96. The vacuum pump 93 and the air pressure control device 94 are combined to form a vacuum pump system, which is used to evacuate and control the air pressure of the oxide single crystal thick film growth device. During use, the flow control device 92 is connected between the gas supply device 91 and the first flange 70 through the hose 96. The inert gas and the oxygen source gas are respectively provided by two independent gas supply ports of the gas supply device 91, and are respectively introduced into two independent control units of the flow control device 92 by two hoses 96. The inert gas with flow control is introduced into the first air inlet 71a through the hose 96, and the oxygen source gas with flow control is introduced into the second air inlet 71b through the hose 96. The air pressure control device 94 is connected between the vacuum pump 93 and the air outlet 81 of the second flange 80 through a hose 96. The air pressure control device 94 controls the air pressure in the oxide single crystal thick film growth device by limiting the pumping speed of the vacuum pump 93 and cooperating with the air intake flow controlled by the flow control device 92.

[0046] like Figure 8 As shown, the oxide single crystal thick film growth system further includes a circulating water supply device 95, which has a water inlet and a water outlet, and the circulating water temperature can be controlled by the circulating water supply device 95. The circulating water supply device 95 is connected to the first circulating water cooling component 72 and the second circulating water cooling component 82 through a hose 96 to form a loop.

[0047] like Fig.11 As shown, an embodiment of the present invention further provides an oxide single crystal thick film growth method, which is performed by an oxide single crystal thick film growth system, and includes the following steps: Fill the metal source reactor 20 with metal oxide and metal element, and place the substrate 31 on the base 30; The oxide single crystal thick film growth device is evacuated and pressure controlled by the vacuum pump system, so that the pressure in the oxide single crystal thick film growth device reaches the limit pressure of the vacuum pump 93, and the oxide single crystal thick film growth device is heated by the furnace body 90 from room temperature to 150° C. to 200° C.; The oxide single crystal thick film growth device is filled with inert gas to make the oxide single crystal thick film growth device at nearly normal pressure, and the oxide single crystal thick film growth device is continuously heated by the furnace body 90 to raise the temperature of the growth zone 12 to 900° C. to 1400° C. and the temperature of the metal source zone 11 to 1100° C. to 1500° C.; The temperatures of the metal source area 11 and the growth area 12 are kept unchanged, and an inert gas and an oxygen source gas are introduced into the oxide single crystal thick film growth device. The inert gas directs the metal source gas formed by the reaction of the metal oxide and the metal element after heating to the surface of the substrate 31, fully mixes with the oxygen source gas, and reacts on the surface of the substrate 31 to grow an oxide single crystal thick film.

[0048] Specifically, the metal oxide in the metal source reactor 20 reacts with the metal element under the heating of the furnace body 90 to generate the metal source gas. The gas supply device 91 is used to introduce the inert gas into the gas supply pipe 42 through the first gas inlet 71a. The inert gas carries the metal source gas in the metal source reactor 20 and transports it toward the surface of the substrate 31 through the output port. The gas supply device 91 is used to introduce the oxygen source gas into the gas inlet chamber 51 through the second gas inlet 71b, and the oxygen source gas is transported toward the surface of the substrate 31 under the guidance of the compression channel 52. The driver 60 drives the coupling 83 and finally drives the substrate 31 to rotate, so that the metal source gas and the oxygen source gas on the surface of the substrate 31 are fully mixed, and the oxide single crystal thick film is grown on the surface of the substrate 31 by reaction.

[0049] Preferably, the ratio of the air flow rate of the first air inlet 71a entering the air supply pipe 42 to the air flow rate of the second air inlet 71b entering the air inlet chamber 51 is 4:(1-5). Under the regulation of the flow control device 92, the flow rate of the inert gas entering the air supply pipe 42 through the first air inlet 71a is 50-300 sccm, and the flow rate of the oxygen source gas entering the air inlet chamber 51 through the second air inlet 71b is 50-200 sccm. Under this flow condition, the vacuum pump system is controlled, the air pressure control device 94 is used to limit the pumping speed of the vacuum pump 93, and the air flow rate is controlled in conjunction with the flow control device 92, so as to control the air pressure in the tube body 10 to 0.8×10 5 Pa-1.2×10 5Pa. Specifically, through the above air intake flow rate, combined with the size design and position relationship of the tube body 10, the metal source reactor 20, the bottom support 30, the air supply pipe 42, and the output pipe 41, the growth rate of the thick film can be as high as 251μm / h, which significantly improves the growth rate of the thick film and ensures the utilization rate of the raw materials. Through the above growth process, the temperature required for the growth of the oxide single crystal can be effectively reduced, so that the structures such as the tube body 10, the metal source reactor 20 and the bottom support 30 only need to be manufactured with low-cost corundum materials, thereby significantly reducing the manufacturing cost of the single crystal thick film growth system.

[0050] In order to better understand the present invention, the following Figures 1 to 11 The technical solution of the present invention is described in detail: in the process of growing an oxide single crystal thick film, first fill the metal oxide and the metal element into the metal source reactor 20, and place the substrate 31 on the bottom support 30. By installing the first flange 70 and the second flange 80, the metal source reactor 20 is respectively set in the metal source area 11, and the substrate 31 is set in the growth area 12, and the tube body 10 is sealed at the same time. Then the oxide single crystal thick film growth device is installed in the furnace body 90. Use the hose 96 to connect the various devices, turn on the circulating water supply device 95, set the circulating water temperature to 20°C, and heat the single crystal thick film growth device through the furnace body 90. Before the temperature of each temperature zone of the tube body 10 rises to 150°C, continue to evacuate the tube body 10 to keep the air pressure in the tube body 10 at the limit pressure of the current vacuum pump 93 and the sealing conditions. When the temperature of each temperature zone reaches 150°C, stop evacuating, and fill the tube body 10 with inert gas Ar to make the inside of the tube body 10 near normal pressure. The furnace body 90 continues to heat the oxide single crystal thick film growth device to raise the temperature of the growth zone 12 to 900°C~1400°C, and raise the temperature of the metal source zone 11 to 1100°C~1500°C. The metal oxide in the metal source reactor reacts with the metal element at 1100°C~1500°C to generate metal source gas. Under the control of the flow control device 92, an inert gas Ar with a flow rate of 50-300sccm is introduced into the gas supply pipe 42 through the first gas inlet 71a, and an oxygen source gas CO2 with a flow rate of 50-200sccm is introduced into the gas inlet chamber 51 through the second gas inlet 71b. Under this flow condition, the air pressure control device 94 is used to limit the pumping speed of the vacuum pump 93, and the intake flow rate controlled by the flow control device 92 is used to control the air pressure in the tube body 10 to 0.8×10 5 Pa-1.2×10 5Pa. The inert gas Ar introduced into the gas delivery pipe 42 carries the metal source gas in the metal source reactor and delivers it to the substrate 31 through the output port, and the oxygen source gas CO2 introduced into the gas inlet cavity 51 is delivered to the substrate 31 through the compression channel 52, and the metal source gas and the oxygen source gas CO2 are fully mixed and reacted on the surface of the substrate 31 to grow an oxide single crystal thick film. Through the above growth process, the temperature required for the growth of the oxide single crystal can be effectively reduced, so that the structures such as the tube body 10, the metal source reactor 20 and the bottom support 30 only need to be manufactured with relatively low-cost corundum materials, thereby significantly reducing the manufacturing cost of the single crystal growth system, and can significantly improve the growth rate of the thick film while ensuring the utilization rate of the raw materials.

[0051] Since the metal source gas is a gaseous metal suboxide or a metal suboxide vapor with a high saturated vapor pressure generated by the reaction of a metal element and its complete metal oxide, the reaction temperature is much lower than the melting point of the metal oxide, and its raw material carrier does not need to be made of heat-resistant and oxidation-resistant precious metal materials, but can be made of ordinary low-cost ceramic materials. The oxide single crystal growth equipment of the present invention is simple and inexpensive, and can be simply modified and built on the basis of an ordinary tubular furnace and crucible accessories. The oxide single crystal thick film growth system thus formed only requires a production cost of RMB 100,000, which greatly reduces the manufacturing cost of the oxide single crystal growth equipment. The steps for growing oxide single crystals using the oxide single crystal thick film growth system are simple, and the grown oxide single crystal thick film has good crystal quality and a fast growth rate, and can be adapted to large-scale production, further reducing the production cost of oxide single crystal thick films.

[0052] The above specific implementations of the present invention do not constitute a limitation on the protection scope of the present invention. Any other corresponding changes and modifications made based on the technical concept of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. An oxide single crystal thick film growth device, characterized in that: include: A tube body, wherein the tube body is provided with a metal source region and a growth region; A metal source reactor, which is disposed in the metal source region and is used for reacting metal oxide with metal element to generate metal source gas; A bottom support, the bottom support is arranged in the growth area and is provided with a substrate; a conveying unit, the conveying unit being connected to the metal source reactor and being used for conveying the metal source gas in the metal source reactor toward the substrate; A gas supply unit is provided on the tube body and is used to supply oxygen source gas to the substrate so as to grow an oxide single crystal thick film on the surface of the substrate through the reaction between the oxygen source gas and the metal source gas.

2. The oxide single crystal thick film growth device according to claim 1, characterized in that: The metal source reactor and the substrate are coaxially arranged, and the conveying unit includes an air supply pipe and an output pipe. The air supply pipe is fixed to a side of the metal source reactor away from the substrate and is coaxially arranged with the output pipe, and is used for blowing inert gas toward the direction of the output pipe. The output pipe is installed on a side of the metal source reactor close to the substrate, and is used for guiding the inert gas to carry the metal source gas in the metal source reactor and convey it toward the direction of the substrate.

3. The oxide single crystal thick film growth device according to claim 2, characterized in that: The distance between the pipe opening of the output pipe and the substrate is between 50 mm and 70 mm, the outer diameter of the air supply pipe is between 12 mm and 16 mm, and the outer diameter of the output pipe is between 18 mm and 22 mm.

4. The oxide single crystal thick film growth device according to any one of claims 1 to 3, characterized in that: The gas supply unit includes an air inlet cavity and a compression channel. The air inlet cavity is located between the gas supply pipe and the tube body and is used to introduce oxygen source gas. The compression channel is located between the metal source reactor and the tube body and is connected to the air inlet cavity and is used to guide the oxygen source gas toward the substrate.

5. The oxide single crystal thick film growth device according to any one of claims 1 to 3, characterized in that: The oxide single crystal thick film growth device also includes a driving rod connected to a base, the substrate is placed on a side of the base close to the metal source reactor, and the driving rod is fixed to a side of the base away from the metal source reactor to drive the base to rotate.

6. The oxide single crystal thick film growth device according to any one of claims 1 to 3, characterized in that: The inner diameter of the tube body is between 65 mm and 75 mm, the outer diameter of the metal source reactor is between 35 mm and 45 mm, and the diameter of the base is between 50 mm and 60 mm.

7. An oxide single crystal thick film growth system, characterized in that: include: The oxide single crystal thick film growth device according to any one of claims 1 to 6; A first flange is installed on a side of the tube body close to the metal source area; A second flange is installed on a side of the tube body close to the growth area; A furnace body, carrying the oxide single crystal thick film growing device, and used for heating the oxide single crystal thick film growing device; A gas supply device, connected to the first flange, for supplying oxygen source gas and inert gas to the oxide single crystal thick film growth device; A vacuum pump system, comprising a vacuum pump and a gas pressure control device, for evacuating and controlling the gas pressure of the oxide single crystal thick film growth device; A driver is connected to the driving rod via a coupling.

8. The oxide single crystal thick film growth system according to claim 7, characterized in that: The first flange is provided with a first air inlet and a second air inlet, wherein the first air inlet is connected to the air supply pipe, and the second air inlet is connected to the air inlet cavity, the second flange is provided with an air outlet, and the air outlet is connected to the tube body, the first flange and the second flange are respectively provided with a first circulating water cooling component and a second circulating water cooling component, and the first circulating water cooling component and the second circulating water cooling component are used to pass circulating water to cool the first flange and the second flange.

9. A method for growing an oxide single crystal thick film, characterized in that: The method is performed by the oxide single crystal thick film growth system according to claim 7, comprising the following steps: Filling metal oxide and metal element into the metal source reactor; The oxide single crystal thick film growth device is subjected to vacuum treatment and air pressure control by the vacuum pump system so that the air pressure in the oxide single crystal thick film growth device reaches the limit pressure of the vacuum pump, and the oxide single crystal thick film growth device is heated by the furnace body so that the temperature is raised from room temperature to 150° C. to 200° C.; Filling the oxide single crystal thick film growth device with inert gas to make the oxide single crystal thick film growth device at near normal pressure, and continuing to heat the oxide single crystal thick film growth device through the furnace body to raise the temperature of the growth zone to 900° C. to 1400° C. and the temperature of the metal source zone to 1100° C. to 1500° C.; The temperatures of the metal source zone and the growth zone are kept unchanged, and an inert gas and an oxygen source gas are introduced into the oxide single crystal thick film growth device. The inert gas directionally transports the metal source gas formed by the reaction of the metal oxide and the metal element after heating to the surface of the substrate, fully mixes with the oxygen source gas, and reacts on the surface of the substrate to grow an oxide single crystal thick film.

10. The method for growing an oxide single crystal thick film according to claim 9, characterized in that: The gas flow rate into the first gas inlet is controlled to be 50-300 sccm, the gas flow rate into the second gas inlet is controlled to be 50-200 sccm, and the vacuum pump system is controlled to make the gas pressure in the oxide single crystal thick film growth device be 0.8×10 5 Pa-1.2×10 5 Pa.

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