Junction temperature distribution measurement system and device of crimping type IGBT device, and storage medium
By designing a junction temperature distribution measurement system for crimped IGBT devices, using timing control signals and thermosensitive parameter methods, combined with timing calibration methods, the problem that the existing technology cannot accurately measure the junction temperature distribution of various chips in the IGBT devices is significantly Improves measurement accuracy and reliability.
Patent Information
- Application Number
- CN202411573747.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-06
- Publication Date
- 2025-02-18
AI Technical Summary
The existing junction temperature distribution measurement technology of IGBT devices cannot accurately obtain the junction temperature distribution of each chip inside the IGBT device, affecting the measurement accuracy and reliability.
A junction temperature distribution measurement system for crimped IGBT devices is designed, including a junction temperature distribution measurement device, isothermal heat dissipation device, crimp packaged IGBT device and timing PCB control device. By determining the timing control signal based on the preset timing, applying voltage and performing timing temperature measurement using the thermosensitive parameter method, combined with the timing calibration method, the calibration junction temperature distribution curve of the crimp-packaged IGBT device is obtained.
Accurate measurement of the junction temperature distribution of each chip inside the crimp package IGBT device is achieved, and measurement accuracy and reliability are improved.
Smart Images
Figure CN119471277A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of power electronic device detection, and in particular to a junction temperature distribution measurement system, equipment and storage medium of a press-fit IGBT device. Background Art
[0002] Insulated gate bipolar transistor (IGBT) is a composite fully controlled voltage-driven power semiconductor device composed of a bipolar transistor and an insulated gate field effect transistor. It has both the high input impedance and high-speed switching performance of metal oxide semiconductor field effect transistors and the low on-state voltage drop and high current density characteristics of power transistors. In recent years, with the rapid development of new energy vehicles, new energy power generation and other fields, the IGBT industry has continued to maintain a high level of prosperity, and the IGBT market size has continued to grow globally.
[0003] Temperature is the most important parameter of the insulated gate bipolar transistor (IGBT). It not only affects the electrical characteristics of the IGBT device, but also affects the reliability of the IGBT device. However, the existing IGBT device junction temperature distribution measurement technology can only obtain the on-resistance of the IGBT device under low current through the total current and saturation voltage drop, and obtain the average junction temperature of the IGBT device, but cannot obtain the on-resistance of each chip under low current and obtain the junction temperature distribution of each chip inside the IGBT device.
[0004] It can be seen that how to accurately obtain the junction temperature distribution of each chip inside the IGBT device has become a technical problem that needs to be urgently solved by those skilled in the art. Summary of the invention
[0005] The present invention provides a junction temperature distribution measurement system, equipment and storage medium for a press-fit IGBT device, so as to solve the technical problem that the existing IGBT device junction temperature distribution measurement technology cannot obtain the junction temperature distribution of each chip inside the IGBT device, thereby improving the accuracy and reliability of the IGBT device junction temperature distribution measurement.
[0006] In order to solve the above technical problems, an embodiment of the present invention provides a junction temperature distribution measurement system for a press-fit IGBT device, including a junction temperature distribution measurement device and an isothermal heat dissipation device, a press-fit packaged IGBT device, and a timing PCB control device, which are respectively controlled by the junction temperature distribution measurement device;
[0007] The isothermal heat dissipation device is used to make the temperature of the surface of the press-fit packaged IGBT device evenly distributed;
[0008] The press-fit packaged IGBT device includes a plurality of parallel-connected chips;
[0009] The timing PCB control device and the junction temperature distribution measurement device are both electrically connected to the press-fit package IGBT device;
[0010] The junction temperature distribution measuring device is configured as follows:
[0011] Determine a timing control signal of the timing PCB control device based on a preset timing, and apply a voltage to the gate terminal of each of the parallel chips based on the timing control signal;
[0012] Using a temperature-sensitive electrical parameter method to perform sequential temperature measurement on all the parallel-connected chips, to obtain a junction temperature time series of each of the parallel-connected chips;
[0013] A timing calibration method is used to calibrate the junction temperature time series of all the parallel chips to obtain a calibrated junction temperature distribution curve of the press-fit packaged IGBT device.
[0014] As one of the preferred solutions, the timing PCB control device includes a plurality of first control modules, a second control module and a multi-way relay module;
[0015] The output end of the first control module is connected to the multi-way relay module, and the output end of the multi-way relay module is connected to the second control module.
[0016] As one of the preferred solutions, the determining of the timing control signal of the timing PCB control device based on the preset timing includes:
[0017] A first multi-way selection signal and a second multi-way selection signal are determined based on a preset timing, the multi-way relay module is controlled based on the first multi-way selection signal, and the second control module is controlled based on the second multi-way selection signal.
[0018] As one of the preferred solutions, the isothermal heat dissipation device includes a vertical isothermal heat dissipation device and a horizontal isothermal heat dissipation device, the vertical isothermal heat dissipation device includes a first vertical isothermal heat dissipation device and a second vertical isothermal heat dissipation device, the first vertical isothermal heat dissipation device and the second vertical isothermal heat dissipation device are symmetrically arranged on the upper and lower sides of the press-fit packaged IGBT device;
[0019] The horizontal isothermal heat dissipation device is arranged between the vertical isothermal heat dissipation device and the press-fit packaged IGBT device.
[0020] As one of the preferred schemes, the multi-way relay module includes a plurality of relays, and under the control of the timing control signal, the operating stages of all the relays include a cooling stage and a heating stage. The relays perform corresponding state switching under the control of the timing control signal, and the state switching is completed in the cooling stage.
[0021] As one of the preferred solutions, the timing PCB control device further includes a plurality of leads, and the timing PCB control device and each of the parallel chips are individually connected via the leads.
[0022] As one of the preferred solutions, the method of using a temperature-sensitive electrical parameter method to perform sequential temperature measurement on all the parallel-connected chips to obtain a junction temperature time series of each parallel-connected chip includes:
[0023] The junction temperature of each parallel chip is collected by using a temperature-sensitive electrical parameter method in each cycle, and the junction temperature of each parallel chip at all collection moments is arranged in ascending order according to the collection time sequence as the junction temperature time series of each parallel chip.
[0024] As one of the preferred solutions, the timing calibration method is used to calibrate the junction temperature time series of all the parallel chips to obtain a calibrated junction temperature distribution curve of the press-fit packaged IGBT device, including:
[0025] Under the control of the multi-way relay module, the gate voltages of all the parallel chips are sequentially set to a preset heating voltage, so that each of the parallel chips is sequentially turned on, and the saturation voltage drop of each of the parallel chips and the temperature of the press-fit packaged IGBT device are recorded;
[0026] The temperature of the press-fit packaged IGBT device at each moment is used as the horizontal axis, and the saturation voltage drop of each of the parallel chips at each moment is used as the vertical axis to obtain a calibrated junction temperature distribution point diagram of the press-fit packaged IGBT device. All points in the calibrated junction temperature distribution point diagram are connected in chronological order as a calibrated junction temperature distribution curve of the press-fit packaged IGBT device.
[0027] Another embodiment of the present invention provides a junction temperature distribution measurement device for a press-fit IGBT device, which includes a processor, a memory, and a computer program stored in the memory and configured to be executed by the processor. When the processor executes the computer program, it implements a junction temperature distribution measurement system for a press-fit IGBT device as described above.
[0028] Another embodiment of the present invention provides a computer-readable storage medium, which stores a computer program. When the device where the computer-readable storage medium is located executes the computer program, a junction temperature distribution measurement system for a press-fit IGBT device as described above is implemented.
[0029] Compared with the prior art, the embodiments of the present invention have the following advantages:
[0030] (1) Determine the timing control signal of the timing PCB control device based on the preset timing, apply voltage to the gate terminal of each parallel chip based on the timing control signal, the timing PCB control device and each parallel chip are individually connected through leads and controlled by different gate signals respectively, and use the temperature-sensitive electrical parameter method to perform timing temperature measurement on all parallel chips to obtain the junction temperature time series of each parallel chip, thereby realizing the measurement of the junction temperature distribution of each chip in the press-fit packaged IGBT device and improving the accuracy of the measurement of the junction temperature distribution of the press-fit packaged IGBT device;
[0031] (2) The junction temperature time series of all parallel chips are corrected by using a timing calibration method to obtain a calibrated junction temperature distribution curve of the press-fit packaged IGBT device, thereby improving the reliability of the junction temperature distribution measurement of each chip inside the press-fit packaged IGBT device. BRIEF DESCRIPTION OF THE DRAWINGS
[0032] Figure 1 is a processing flow chart of a junction temperature distribution measuring device in one embodiment of the present invention;
[0033] Figure 2 is a schematic diagram of obtaining a calibrated junction temperature distribution curve in one embodiment of the present invention;
[0034] Figure 3 is a schematic diagram of a timing PCB control device in one embodiment of the present invention;
[0035] Figure 4 It is a schematic diagram of an isothermal heat dissipation device in one embodiment of the present invention. DETAILED DESCRIPTION
[0036] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. The purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0037] In the description of this application, the terms "first", "second", "third", etc. are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", "third", etc. may explicitly or implicitly include one or more of the feature. In the description of this application, unless otherwise specified, "plurality" means two or more.
[0038] In the description of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be a connection between the two elements. The terms "vertical", "horizontal", "left", "right", "upper", "lower" and similar expressions used herein are only for illustrative purposes, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0039] In the description of this application, it should be noted that, unless otherwise defined, all technical and scientific terms used in the present invention have the same meaning as those commonly understood by those skilled in the art. The terms used in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood by specific circumstances.
[0040] An embodiment of the present invention provides a junction temperature distribution measurement system for a press-fit IGBT device, comprising a junction temperature distribution measurement device and an isothermal heat dissipation device, a press-fit packaging IGBT device and a timing PCB control device respectively controlled by the junction temperature distribution measurement device.
[0041] Specifically, the press-fit packaged IGBT device includes a plurality of parallel-connected chips, and the timing PCB control device and the junction temperature distribution measurement device are both electrically connected to the press-fit packaged IGBT device.
[0042] Furthermore, the processing flow of the junction temperature distribution measuring device includes:
[0043] Step S1: determining a timing control signal of a timing PCB control device based on a preset timing, and applying a voltage to a gate terminal of each parallel chip based on the timing control signal;
[0044] Step S2: using a temperature-sensitive electrical parameter method to collect the junction temperature of each parallel chip in each cycle, and arranging the junction temperature of each parallel chip at all collection moments in ascending order according to the collection time sequence as the junction temperature time series of each parallel chip;
[0045] Step S3: under the control of the multi-way relay module, the gate voltages of all parallel chips are sequentially set to a preset heating voltage, so that each parallel chip is turned on in turn, and the saturation voltage drop of each parallel chip and the temperature of the crimped packaged IGBT device are recorded;
[0046] Step S4: Taking the temperature of the press-fit packaged IGBT device at each moment as the horizontal axis and the saturation voltage drop of each parallel chip at each moment as the vertical axis, a calibration junction temperature distribution point diagram of the press-fit packaged IGBT device is obtained, and all points in the calibration junction temperature distribution point diagram are connected in chronological order as a calibration junction temperature distribution curve of the press-fit packaged IGBT device.
[0047] For details, see Figure 1 , Figure 1 FIG. 1 is a process flow chart of a junction temperature distribution measurement device in one embodiment of the present invention. Figure 2 , Figure 2 FIG. 1 is a schematic diagram showing the acquisition of a calibrated junction temperature distribution curve in one embodiment of the present invention.
[0048] It should be noted that the timing PCB control device includes a plurality of first control modules, a second control module and a multi-way relay module, the output end of the first control module is connected to the multi-way relay module, and the output end of the multi-way relay module is connected to the second control module. The timing PCB control device also includes a plurality of leads, and the timing PCB control device and each parallel chip are individually connected through the leads.
[0049] Before measuring the junction temperature distribution of the press-fit packaged IGBT device, the first multi-way selection signal and the second multi-way selection signal are determined based on a preset timing, the multi-way relay module is controlled based on the first multi-way selection signal, and the second control module is controlled based on the second multi-way selection signal to achieve individual control of each parallel chip.
[0050] It should be further explained that the multi-channel relay module includes several relays. Under the control of the timing control signal, the operating stages of all relays include a cooling stage and a heating stage. The relays perform corresponding state switching under the control of the timing control signal, and the state switching is completed in the cooling stage.
[0051] It should be further explained that, since the junction temperature distribution of each chip is the same under periodic steady-state conditions, the junction temperature distribution of each chip in one cycle can be equivalently obtained by sequentially measuring the junction temperature of each chip in different cycles. It should be pointed out that in the timing of gate individual control, the gate of the parallel chip in the device under test may be turned on later or turned off earlier than the gate of the series device, which may cause the load current to flow through only some of the parallel chips. In this regard, a dead time of hundreds of μs is set in the gate control timing to avoid such a situation.
[0052] This embodiment designs and develops a timing PCB control device based on the timing coordination of multiple relays, which generates the required gate signals of each parallel chip through multiple selection of 2-way signals in different cycles. Figure 3 , Figure 3 A schematic diagram of a timing PCB control device in one embodiment of the present invention is shown.
[0053] Figure 3 In the control signal C 2 is the first multiplex selection signal, the control signal C 0 and C 1 is the second multiplex selection signal, the control signal C 0 It is 15V in the heating stage and 0V in the cooling stage, but the pulse width is slightly wider than the gate control signal of the series device to ensure the above-mentioned dead time. 1 The control signal C is a constant 15V voltage. 0 and C 1 They are connected to the normally open contacts and normally closed contacts of each relay respectively. Control signal C 2 It is used to control the switching of multiple relays between normally open and normally closed contacts. In the cooling stage of the i-th cycle, relay K i Switch to the normally open contact, and the rest of the relays remain in the normally closed contact. The relay has a millisecond response time. Switching the relay contacts during the heating stage may cause only part of the chip to conduct current. Therefore, the switching of the relay states in different cycles must be completed during the cooling stage, and the time point is generally selected at C 1 The signal falling edge delay is 0.1s. 2 The control can be used to change the signal C in different cycles. 0 and C 1 The above scheme can be easily integrated into the standard DC power cycle test, and only one control signal C is required. 0 and a multi-way relay system.
[0054] It should be noted that another key issue in multi-chip calibration is the need to ensure that the device is an isothermal body. The isothermal heat dissipation device is used to make the temperature of the surface of the press-fit packaged IGBT device evenly distributed.
[0055] Specifically, the isothermal heat dissipation device includes a vertical isothermal heat dissipation device and a horizontal isothermal heat dissipation device. The vertical isothermal heat dissipation device includes a first vertical isothermal heat dissipation device and a second vertical isothermal heat dissipation device. The first vertical isothermal heat dissipation device and the second vertical isothermal heat dissipation device are symmetrically arranged on the upper and lower sides of the press-fit packaged IGBT device.
[0056] The horizontal isothermal heat dissipation device is arranged between the vertical isothermal heat dissipation device and the press-fit packaged IGBT device.
[0057] As an embodiment of the present application, the first vertical isothermal heat sink and the second vertical isothermal heat sink constitute a double-sided heat dissipation calibration fixture, and two heating plates with equal heating power are placed on the upper and lower sides of the press-fit packaged IGBT device, and the temperature gradients on both sides are offset to ensure that the internal temperature of the press-fit packaged IGBT device is uniformly distributed in the longitudinal direction. Considering that the internal heat source of the heating plate is a rod-shaped structure, which may cause uneven distribution of the device temperature in the lateral direction, this embodiment adds an aluminum plate as a buffer layer between the press-fit packaged IGBT device and the heating plate to ensure that the internal temperature of the press-fit packaged IGBT device is uniformly distributed in the lateral direction.
[0058] For details, see Figure 4 , Figure 4 Shown is a schematic diagram of an isothermal heat dissipation device in one embodiment of the present invention.
[0059] Another embodiment of the present invention provides a junction temperature distribution measurement device for a press-fit IGBT device, which includes a processor, a memory, and a computer program stored in the memory and configured to be executed by the processor. When the processor executes the computer program, it implements a junction temperature distribution measurement system for a press-fit IGBT device as described above.
[0060] Another embodiment of the present invention provides a computer-readable storage medium, which stores a computer program. When the device where the computer-readable storage medium is located executes the computer program, a junction temperature distribution measurement system for a press-fit IGBT device as described above is implemented.
[0061] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the patent of the present invention. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.
Claims
1. A junction temperature distribution measurement system for a press-fit IGBT device, characterized in that: It includes a junction temperature distribution measuring device and an isothermal heat dissipation device, a press-fit packaging IGBT device and a timing PCB control device respectively controlled by the junction temperature distribution measuring device; The isothermal heat dissipation device is used to make the temperature of the surface of the press-fit packaged IGBT device evenly distributed; The press-fit packaged IGBT device includes a plurality of parallel-connected chips; The timing PCB control device and the junction temperature distribution measurement device are both electrically connected to the press-fit package IGBT device; The junction temperature distribution measuring device is configured as follows: Determine a timing control signal of the timing PCB control device based on a preset timing, and apply a voltage to the gate terminal of each of the parallel chips based on the timing control signal; Using a temperature-sensitive electrical parameter method to perform sequential temperature measurement on all the parallel-connected chips, to obtain a junction temperature time series of each of the parallel-connected chips; A timing calibration method is used to calibrate the junction temperature time series of all the parallel chips to obtain a calibrated junction temperature distribution curve of the press-fit packaged IGBT device.
2. The junction temperature distribution measurement system of a press-fit IGBT device according to claim 1, characterized in that: The timing PCB control device comprises a plurality of first control modules, a second control module and a multi-way relay module; The output end of the first control module is connected to the multi-way relay module, and the output end of the multi-way relay module is connected to the second control module.
3. The junction temperature distribution measurement system of a press-fit IGBT device according to claim 2, characterized in that: The method of determining the timing control signal of the timing PCB control device based on the preset timing includes: A first multi-way selection signal and a second multi-way selection signal are determined based on a preset timing, the multi-way relay module is controlled based on the first multi-way selection signal, and the second control module is controlled based on the second multi-way selection signal.
4. The junction temperature distribution measurement system of a press-fit IGBT device according to claim 1, characterized in that: The isothermal heat dissipation device comprises a vertical isothermal heat dissipation device and a horizontal isothermal heat dissipation device, the vertical isothermal heat dissipation device comprises a first vertical isothermal heat dissipation device and a second vertical isothermal heat dissipation device, the first vertical isothermal heat dissipation device and the second vertical isothermal heat dissipation device are symmetrically arranged on the upper and lower sides of the press-fit packaged IGBT device; The horizontal isothermal heat dissipation device is arranged between the vertical isothermal heat dissipation device and the press-fit packaged IGBT device.
5. The junction temperature distribution measurement system of a press-fit IGBT device according to claim 3, characterized in that: The multi-channel relay module includes a plurality of relays. Under the control of the timing control signal, the operation phases of all the relays include a cooling phase and a heating phase. The relays perform corresponding state switching under the control of the timing control signal, and the state switching is completed in the cooling phase.
6. The junction temperature distribution measurement system of a press-fit IGBT device according to claim 1, characterized in that: The timing PCB control device further comprises a plurality of leads, and the timing PCB control device and each of the parallel chips are individually connected via the leads.
7. The junction temperature distribution measurement system of a press-fit IGBT device according to claim 1, characterized in that: The method of using a temperature-sensitive electrical parameter method to perform sequential temperature measurement on all the parallel-connected chips to obtain a junction temperature time series of each parallel-connected chip includes: The junction temperature of each parallel chip is collected by using a temperature-sensitive electrical parameter method in each cycle, and the junction temperature of each parallel chip at all collection moments is arranged in ascending order according to the collection time sequence as the junction temperature time series of each parallel chip.
8. The junction temperature distribution measurement system of a press-fit IGBT device according to claim 3, characterized in that: The method of using a timing calibration method to correct the junction temperature time series of all the parallel chips to obtain a calibrated junction temperature distribution curve of the press-fit packaged IGBT device includes: Under the control of the multi-way relay module, the gate voltages of all the parallel chips are sequentially set to a preset heating voltage, so that each of the parallel chips is sequentially turned on, and the saturation voltage drop of each of the parallel chips and the temperature of the press-fit packaged IGBT device are recorded; The temperature of the press-fit packaged IGBT device at each moment is used as the horizontal axis, and the saturation voltage drop of each of the parallel chips at each moment is used as the vertical axis to obtain a calibrated junction temperature distribution point diagram of the press-fit packaged IGBT device. All points in the calibrated junction temperature distribution point diagram are connected in chronological order as a calibrated junction temperature distribution curve of the press-fit packaged IGBT device.
9. A junction temperature distribution measurement device for a press-fit IGBT device, characterized in that: The invention comprises a processor, a memory and a computer program stored in the memory and configured to be executed by the processor, wherein when the processor executes the computer program, a junction temperature distribution measurement system of a press-fit IGBT device as claimed in any one of claims 1 to 8 is implemented.
10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, wherein when the device where the computer-readable storage medium is located executes the computer program, a junction temperature distribution measurement system for a press-fit IGBT device as described in any one of claims 1 to 8 is implemented.