High-power short-wave LDMOS solid-state power amplifier temperature characteristic test method

Abstract

The invention discloses a temperature characteristic testing method for a high-power short-wave LDMOS solid-state power amplifier. Comprising a high-power short-wave LDMOS solid-state power amplifier direct-current temperature characteristic test, a high-power short-wave LDMOS solid-state power amplifier RF large-signal temperature characteristic test, a high-power short-wave LDMOS solid-state power amplifier dual-tone power and intermodulation temperature characteristic test and a high-power short-wave LDMOS solid-state power amplifier second / third harmonic temperature characteristic test. According to the core of the invention, a signal generator, a direct-current power supply, an alternating-current power supply, a digital power meter, a frequency spectrograph, an attenuator, a load, a temperature box and the like are adopted to realize the temperature characteristic test of the high-power short-wave LDMOS solid-state power amplifier. These instruments have the ability to test drain-source current Ids, output power Pout, gain Gain, power added efficiency PAE, dual-tone power, intermodulation, and second and third harmonic temperature parameters. Compared with other traditional testing technologies, the technology has the advantages of being high in accuracy, high in operability and the like. According to the invention, the temperature characteristic of the high-power short-wave LDMOS solid-state power amplifier can be effectively tested, and important guidance can be provided for the reliability design of the short-wave LDMOS solid-state power amplifier.

Description

Technical Field

[0001] The present invention relates to the research field of circuit reliability and circuit design, and more specifically, to a temperature characteristic testing method of a high-power short-wave LDMOS solid-state power amplifier. Background Art

[0002] In recent years, with the rapid development of mobile communications, global positioning systems (GPS), radio astronomy, radar and electronic warfare systems, the market demand for electronic communication equipment has grown rapidly. In this context, wireless communication systems have undergone a series of major changes. As a key component of the front-end transmitter of wireless communication systems, power amplifiers (PAs) have also developed rapidly and play an important role in the fields of commercial and military communications. At the same time, people's requirements for the performance, reliability, bandwidth resources, etc. of power amplifiers are also increasing. However, with the increase in the power output and operating frequency of power amplifiers, their temperature reliability issues have become the focus of attention in the industry, and high temperature, high voltage and other application environments have posed huge challenges to their reliability. High temperature will accelerate the performance degradation and failure of power amplifiers, reduce their lifespan, and thus seriously threaten the reliability of the entire circuit. Therefore, it is necessary to study the performance and reliability of power amplifiers in different application scenarios. From the theory of semiconductor devices, it can be seen that the changes in carrier mobility, intrinsic carrier concentration and threshold voltage with temperature are the main factors that limit the operating temperature range of the circuit and affect its normal operation under high and low temperature conditions. Usually, circuits designed according to room temperature electrical characteristics cannot meet application requirements at high temperatures. Conversely, at low temperatures, the device will work in an oversaturated state, which will reduce the reliability of the device. Therefore, it is not enough to complete circuit testing at room temperature. Actual testing should also be carried out for different application environments of the circuit to verify the working conditions of the actual circuit at different temperatures.

[0003] In short, temperature directly affects the performance degradation of the circuit. However, considering the differences in circuit design structure, integration, device materials and experimental environment, there are relatively few studies on the temperature characteristics of high-power short-wave LDMOS solid-state power amplifiers. In summary, the study of temperature characteristics of high-power short-wave LDMOS solid-state power amplifiers is of great significance for their reliability design, which helps to further enhance the reliability of short-wave LDMOS solid-state power amplifiers and improve their core competitiveness in the field of electronic information. Summary of the invention

[0004] The purpose of the invention is to study the temperature characteristics of a high-power short-wave LDMOS solid-state power amplifier and propose a temperature characteristics testing method for a high-power short-wave LDMOS solid-state power amplifier, which can provide important guidance for the reliability design of the short-wave LDMOS solid-state power amplifier.

[0005] The technical method and solution of the present invention for solving the above-mentioned temperature behavior research are as follows: a high-power short-wave LDMOS solid-state power amplifier temperature characteristic test method, including a high-power short-wave LDMOS solid-state power amplifier DC temperature characteristic test, a high-power short-wave LDMOS solid-state power amplifier RF large signal temperature characteristic test, a high-power short-wave LDMOS solid-state power amplifier dual-tone power and intermodulation temperature characteristic test, and a high-power short-wave LDMOS solid-state power amplifier second / third harmonic temperature characteristic test;

[0006] The DC temperature characteristic test of the high-power short-wave LDMOS solid-state power amplifier uses a temperature test box, a digital power meter, a DC power supply, an attenuator and a load. During the test, the center frequency Frequency of the high-power short-wave LDMOS solid-state power amplifier is set to a preset value, and the operating voltage of the high-power short-wave LDMOS solid-state power amplifier is gradually increased until it reaches the preset value. The temperature of the high-power short-wave LDMOS solid-state power amplifier is controlled to rise within the maximum operating temperature range according to a certain gradient, and the drain-source current I of the high-power short-wave LDMOS solid-state power amplifier at different temperatures is recorded respectively. ds Mapping relationship with input power Pin;

[0007] The RF large signal temperature characteristic test of the high-power short-wave LDMOS solid-state power amplifier uses a temperature test box, an AC power supply, a power meter, an attenuator and a load. During the test, the operating voltage of the high-power short-wave LDMOS solid-state power amplifier is set to a preset value, and the temperature of the high-power short-wave LDMOS solid-state power amplifier is controlled to rise within the maximum operating temperature range according to a certain gradient. The mapping relationship between the output power Pout, gain Gain, power added efficiency PAE and input power Pin of the high-power short-wave LDMOS solid-state power amplifier at different temperatures, and the mapping relationship between the output power Pout, gain Gain, power added efficiency PAE and frequency Frequency are recorded;

[0008] The dual-tone power and intermodulation temperature characteristic test of the high-power short-wave LDMOS solid-state power amplifier uses a temperature test box, an AC power supply, a spectrum analyzer, a signal generator, an attenuator and a load. During the test, the operating voltage of the high-power short-wave LDMOS solid-state power amplifier is set to a preset value, the frequency of the high-power short-wave LDMOS solid-state power amplifier is set to a preset value, the temperature of the high-power short-wave LDMOS solid-state power amplifier is controlled to rise within the maximum operating temperature range according to a certain gradient, and the mapping relationship between the dual-tone power and intermodulation of the high-power short-wave LDMOS solid-state power amplifier and the input power Pin at different temperatures is recorded respectively;

[0009] The temperature characteristic test of the second / third harmonic of the high-power short-wave LDMOS solid-state power amplifier adopts a temperature experiment box, an AC power supply, a spectrum analyzer, a signal generator, an attenuator and a load. During the test, the operating voltage of the high-power short-wave LDMOS solid-state power amplifier is set to a preset value, the input power Pin of the high-power short-wave LDMOS solid-state power amplifier is set to a preset value, the temperature of the high-power short-wave LDMOS solid-state power amplifier is controlled to rise according to a certain gradient within the maximum operating temperature range, and the mapping relationship between the second / third harmonic and the frequency Frequency of the high-power short-wave LDMOS solid-state power amplifier at different temperatures is recorded respectively.

[0010] Compared with the prior art, the technical solution of the present invention has the following beneficial effects: the core of the present invention is to use a signal generator, a DC power supply, an AC power supply, a digital power meter, a spectrum analyzer, an attenuator, a load and a temperature box to realize the temperature characteristic test of a high-power short-wave LDMOS solid-state power amplifier. The core instrument has the function of testing the drain-source current I ds , output power Pout, gain Gain, power added efficiency PAE, two-tone power, intermodulation, second and third harmonic temperature parameters. Compared with other traditional testing technologies, this technology has the advantages of high accuracy and strong operability. The present invention can effectively test the temperature characteristics of high-power short-wave LDMOS solid-state power amplifiers, and can provide important guidance for the reliability design of short-wave LDMOS solid-state power amplifiers. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 The research method steps of the present invention;

[0012] Figure 2 Connected to the DC temperature characteristic test circuit of the high-power short-wave LDMOS solid-state power amplifier of the present invention;

[0013] Figure 3 This is a test flow for the DC temperature characteristics of a high-power short-wave LDMOS solid-state power amplifier of the present invention;

[0014] Figure 4 Connected to the high-power short-wave LDMOS solid-state power amplifier RF large signal temperature characteristic test circuit of the present invention;

[0015] Figure 5 The RF large signal temperature characteristic test process of the high-power short-wave LDMOS solid-state power amplifier of the present invention;

[0016] Figure 6 Connected to the dual-tone power and intermodulation temperature characteristic test circuit and the second / third harmonic temperature characteristic test circuit of the high-power short-wave LDMOS solid-state power amplifier of the present invention;

[0017] Figure 7 It is a process for testing the dual-tone power and intermodulation temperature characteristics and the second / third harmonic temperature characteristics of the high-power short-wave LDMOS solid-state power amplifier of the present invention;

[0018] Figure 8 The mapping relationship between the DC characteristics and temperature of the high-power short-wave LDMOS solid-state power amplifier of the present invention;

[0019] Fig. 9 The mapping relationship between the RF large signal and the temperature when the frequency is fixed at 2 MHz for the high-power short-wave LDMOS solid-state power amplifier of the present invention;

[0020] Fig.10 The mapping relationship between the RF large signal and the temperature when the frequency is fixed at 16 MHz for the high-power short-wave LDMOS solid-state power amplifier of the present invention;

[0021] Fig.11 The mapping relationship between the RF large signal and the temperature when the frequency is fixed at 30 MHz for the high-power short-wave LDMOS solid-state power amplifier of the present invention;

[0022] Fig.12 The mapping relationship between the RF large signal and the temperature when the input power of the high-power short-wave LDMOS solid-state power amplifier of the present invention is fixed;

[0023] Fig.13 The mapping relationship between the dual-tone power and temperature of the high-power short-wave LDMOS solid-state power amplifier of the present invention;

[0024] Fig.14 The mapping relationship between intermodulation and temperature of the high-power short-wave LDMOS solid-state power amplifier of the present invention;

[0025] Fig.15 The mapping relationship between the second harmonic and temperature of the high-power short-wave LDMOS solid-state power amplifier of the present invention;

[0026] Fig.16 The mapping relationship between the third harmonic and temperature of the high-power short-wave LDMOS solid-state power amplifier of the present invention; DETAILED DESCRIPTION

[0027] The principles and features of the present invention are described below in conjunction with the accompanying drawings. The examples given are only used to explain the present invention and are not used to limit the scope of the present invention.

[0028] like Figure 1As shown, a high-power short-wave LDMOS solid-state power amplifier temperature characteristic test method includes a high-power short-wave LDMOS solid-state power amplifier DC temperature characteristic test, a high-power short-wave LDMOS solid-state power amplifier RF large signal temperature characteristic test, a high-power short-wave LDMOS solid-state power amplifier dual-tone power and intermodulation temperature characteristic test, and a high-power short-wave LDMOS solid-state power amplifier second / third harmonic temperature characteristic test;

[0029] The DC temperature characteristic test of the high-power short-wave LDMOS solid-state power amplifier uses a temperature test box, a digital power meter, a DC power supply, an attenuator and a load. During the test, the center frequency Frequency of the high-power short-wave LDMOS solid-state power amplifier is set to a preset value, and the operating voltage of the high-power short-wave LDMOS solid-state power amplifier is gradually increased until it reaches the preset value. The temperature of the high-power short-wave LDMOS solid-state power amplifier is controlled to rise within the maximum operating temperature range according to a certain gradient, and the drain-source current I of the high-power short-wave LDMOS solid-state power amplifier at different temperatures is recorded respectively. ds Mapping relationship with input power Pin;

[0030] The RF large signal temperature characteristic test of the high-power short-wave LDMOS solid-state power amplifier uses a temperature test box, an AC power supply, a power meter, an attenuator and a load. During the test, the operating voltage of the high-power short-wave LDMOS solid-state power amplifier is set to a preset value, and the temperature of the high-power short-wave LDMOS solid-state power amplifier is controlled to rise within the maximum operating temperature range according to a certain gradient. The mapping relationship between the output power Pout, gain Gain, power added efficiency PAE and input power Pin of the high-power short-wave LDMOS solid-state power amplifier at different temperatures, and the mapping relationship between the output power Pout, gain Gain, power added efficiency PAE and frequency Frequency are recorded;

[0031] The dual-tone power and intermodulation temperature characteristic test of the high-power short-wave LDMOS solid-state power amplifier uses a temperature test box, an AC power supply, a spectrum analyzer, a signal generator, an attenuator and a load. During the test, the operating voltage of the high-power short-wave LDMOS solid-state power amplifier is set to a preset value, the frequency of the high-power short-wave LDMOS solid-state power amplifier is set to a preset value, the temperature of the high-power short-wave LDMOS solid-state power amplifier is controlled to rise within the maximum operating temperature range according to a certain gradient, and the mapping relationship between the dual-tone power and intermodulation of the high-power short-wave LDMOS solid-state power amplifier and the input power Pin at different temperatures is recorded respectively;

[0032] The temperature characteristic test of the second / third harmonic of the high-power short-wave LDMOS solid-state power amplifier adopts a temperature experiment box, an AC power supply, a spectrum analyzer, a signal generator, an attenuator and a load. During the test, the operating voltage of the high-power short-wave LDMOS solid-state power amplifier is set to a preset value, the input power Pin of the high-power short-wave LDMOS solid-state power amplifier is set to a preset value, the temperature of the high-power short-wave LDMOS solid-state power amplifier is controlled to rise according to a certain gradient within the maximum operating temperature range, and the mapping relationship between the second / third harmonic and the frequency Frequency of the high-power short-wave LDMOS solid-state power amplifier at different temperatures is recorded respectively.

[0033] Embodiments of the present invention.

[0034] Based on a 0-30MHz 1000W short-wave LDMOS solid-state power amplifier, its saturation Pout reaches 59.54dBm, Gain is 50.64dB, PAE is 2.1%, dual-tone power is 59.65dBm, intermodulation is -26.81dBm, second harmonic is -22.52dBm, and third harmonic is -12.8dBm at room temperature. A temperature characteristic testing method for a high-power short-wave LDMOS solid-state power amplifier proposed in the present invention is described in detail.

[0035] The DC temperature characteristic test of 1000W short-wave LDMOS solid-state power amplifier adopts temperature test box, digital power meter, DC power supply, attenuator 50dBm and 1000W large load. During the test, the center frequency Frequency of the high-power short-wave LDMOS solid-state power amplifier is set to 16MHz, and the working voltage of the 1000W short-wave LDMOS solid-state power amplifier is gradually increased until it reaches 48V. The temperature of the 1000W short-wave LDMOS solid-state power amplifier is controlled to rise within a certain gradient within -25℃~55℃, and the drain-source current I of the 1000W short-wave LDMOS solid-state power amplifier at different temperatures is recorded respectively. ds The mapping relationship with the input power Pin is as follows: Figure 8 As shown, it can be seen that the fixed frequency is 16MHz, and the drain-source current I corresponding to the change of input power Pin ds Both decrease with increasing temperature. When the temperature reaches 55°C, the drain-source current I ds Reduce 1.21A.

[0036] The 1000W short-wave LDMOS solid-state power amplifier RF large signal temperature characteristic test uses a temperature test box, AC power supply, power meter, attenuator and 1000W large load. During the test, the operating voltage of the high-power short-wave LDMOS solid-state power amplifier is set to 48V, and the temperature of the 1000W short-wave LDMOS solid-state power amplifier is controlled to rise within a certain gradient within -25℃~55℃. The mapping relationship between the output power Pout, gain Gain, power added efficiency PAE and frequency Frequency of the 1000W short-wave LDMOS solid-state power amplifier at different temperatures, and the mapping relationship between the output power Pout, gain Gain, power added efficiency PAE and input power Pin are recorded. The results are as follows Fig. 9 , 10 , 11 and 12, Fig. 9 It can be seen that when the frequency is 2MHz, the Pout, Gain and PAE corresponding to the change of input power Pin all show a certain downward trend with the increase of temperature, decreasing by 3.5dB, 2.4dB and 5% respectively; Fig.10 It can be seen that when the frequency is 16MHz, the Pout, Gain and PAE corresponding to the change of input power Pin all decrease with the increase of temperature, decreasing by 1.2dB, 0.2dB and 0.9% respectively; Fig.11 It can be seen that when the frequency is fixed at 30MHz and the input power Pin is changed, the Pout, Gain and PAE corresponding to the change all show a certain degradation trend with the increase of temperature, which degrade by 1.3dB, 1.3dB and 1.08% respectively; Fig.12 It can be seen that when the input power Pin is 8.9dBm, the Pout, Gain and PAE corresponding to the frequency change Frequency all decrease with the increase of temperature, decreasing by 1.91dB, 2dB and 0.96% respectively.

[0037] The dual-tone power and intermodulation temperature characteristics test of the 1000W short-wave LDMOS solid-state power amplifier uses a temperature test box, an AC power supply, a spectrum analyzer, a signal generator, an attenuator 50dB and a 1000W large load. During the test, the operating voltage of the 1000W short-wave LDMOS solid-state power amplifier is set to 48V, and the frequency is set to 2MHz, 16MHz, and 30MHz. The temperature of the 1000W short-wave LDMOS solid-state power amplifier is controlled to rise within a certain gradient within -25℃~55℃, and the mapping relationship between the dual-tone power and intermodulation and the input power Pin of the 1000W short-wave LDMOS solid-state power amplifier at different temperatures is recorded respectively. The results are as follows: Fig.13 and 14 As shown, Fig.13It can be seen that the dual-tone power corresponding to the change of input power Pin at frequencies of 2MHz, 16MHz and 30MHz decreases with the increase of temperature. The dual-tone power at 2MHz and 30MHz decreases more, about 2.4dB, and the dual-tone power at 16MHz decreases less, about 0.6dB; Fig.14 It can be seen that when the frequency is 2MHz, 16MHz and 30MHz, the intermodulation corresponding to changing the input power Pin shows an increasing trend with the increase of temperature, increasing by 7dB, 3dB and 4dB respectively.

[0038] The temperature characteristic test of the second / third harmonic of the 1000W short-wave LDMOS solid-state power amplifier uses a temperature test box, an AC power supply, a spectrum analyzer, a signal generator, an attenuator and a 1000W large load. During the test, the operating voltage of the 1000W short-wave LDMOS solid-state power amplifier is set to 48V, and the input power Pin of the 1000W short-wave LDMOS solid-state power amplifier is set to 8.9dBm. The temperature of the 1000W short-wave LDMOS solid-state power amplifier is controlled to rise within a certain gradient within -25℃~55℃, and the mapping relationship between the second / third harmonic and the frequency of the 1000W short-wave LDMOS solid-state power amplifier at different temperatures is recorded respectively. The results are as follows: Fig.15 and 16 As shown, Fig.15 It can be seen that when the input power Pin is 8.9dBm, the second harmonic corresponding to the frequency change Frequency increases with the increase of temperature, increasing by about 2.94dB; Fig.16 It can be seen that the input power Pin is 8.9dBm, and the third harmonic corresponding to the change in frequency Frequency increases with the increase in temperature, increasing by about 3dB.

[0039] In summary, the proposed temperature characteristic test method for a high-power short-wave LDMOS solid-state power amplifier can provide important guidance for the reliability design of short-wave LDMOS solid-state power amplifiers.

[0040] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A high-power short-wave LDMOS solid-state power amplifier temperature characteristic test method, including a high-power short-wave LDMOS solid-state power amplifier DC temperature characteristic test, a high-power short-wave LDMOS solid-state power amplifier RF large signal temperature characteristic test, a high-power short-wave LDMOS solid-state power amplifier dual-tone power and intermodulation temperature characteristic test, and a high-power short-wave LDMOS solid-state power amplifier second / third harmonic temperature characteristic test; The high-power short-wave LDMOS solid-state power amplifier DC temperature characteristic test mainly adopts a temperature test box, a digital power meter, a DC power supply, an attenuator and a load. During the test, the center frequency Frequency of the high-power short-wave LDMOS solid-state power amplifier is set to a preset value, and the working voltage of the high-power short-wave LDMOS solid-state power amplifier is gradually increased until it reaches the preset value. The temperature of the high-power short-wave LDMOS solid-state power amplifier in the environment is controlled to increase step by step within the maximum working temperature range according to a certain gradient, and the drain-source current I of the high-power short-wave LDMOS solid-state power amplifier at different temperatures is recorded respectively. ds Mapping relationship with input power Pin; The high-power short-wave LDMOS solid-state power amplifier RF large signal temperature characteristic test mainly adopts a temperature test box, an AC power supply, a digital power meter, an attenuator and a load. During the test, the operating voltage of the high-power short-wave LDMOS solid-state power amplifier is set to a preset value, and the temperature of the high-power short-wave LDMOS solid-state power amplifier in the environment is controlled to rise according to a certain gradient within the maximum operating temperature range, and the mapping relationship between the output power Pout, gain Gain, power added efficiency PAE and input power Pin of the high-power short-wave LDMOS solid-state power amplifier at different temperatures, and the mapping relationship between the output power Pout, gain Gain, power added efficiency PAE and frequency Frequency is recorded; The high-power short-wave LDMOS solid-state power amplifier dual-tone power and intermodulation temperature characteristic test mainly adopts a temperature experiment box, an AC power supply, a spectrum analyzer, a signal generator, an attenuator and a load. During the test, the operating voltage of the high-power short-wave LDMOS solid-state power amplifier is set to a preset value, the frequency of the high-power short-wave LDMOS solid-state power amplifier is set to a preset value, the temperature of the environmental high-power short-wave LDMOS solid-state power amplifier is controlled to rise within the maximum operating temperature range according to a certain gradient, and the mapping relationship between the dual-tone power and intermodulation of the high-power short-wave LDMOS solid-state power amplifier and the input power Pin at different temperatures is recorded respectively; The high-power short-wave LDMOS solid-state power amplifier second / third harmonic temperature characteristic test mainly adopts a temperature test box, an AC power supply, a spectrum analyzer, a signal generator, an attenuator and a load. During the test, the operating voltage and the input power Pin of the high-power short-wave LDMOS solid-state power amplifier are set to preset values, the temperature of the environmental high-power short-wave LDMOS solid-state power amplifier is controlled to rise according to a certain gradient within the maximum operating temperature range, and the mapping relationship between the second / third harmonic and the frequency Frequency of the high-power short-wave LDMOS solid-state power amplifier at different temperatures is recorded respectively.

2. A method for testing temperature characteristics of a high-power short-wave LDMOS solid-state power amplifier according to claim 1, characterized in that: The gain and power added efficiency PAE of the high-power short-wave LDMOS solid-state power amplifier RF large signal temperature characteristic test are as follows: When the unit of power is dBm, the Gain calculation formula is as follows: Gain=Pout-Pin The power added efficiency PAE calculation formula is as follows: Among them, P dc Indicates the DC power of the power supply of the high-power short-wave LDMOS solid-state power amplifier.

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