Staggered double-gate slow wave structure and traveling wave tube with same

Abstract

The invention provides a staggered double-gate slow wave structure and a traveling wave tube with the same. The staggered double-gate slow-wave structure comprises a first slow-wave structure which comprises a first gate body part and a second gate body part, a first electronic channel is arranged between the first gate body part and the second gate body part, and gates are arranged in a staggered manner; the second slow wave structure comprises a third gate body part and a fourth gate body part, a second electronic channel is arranged between the third gate body part and the fourth gate body part, and the gates are arranged in a staggered manner; one side of the connecting structure is connected with the first slow-wave structure, the other side of the connecting structure is connected with the second slow-wave structure, a coupling cavity is formed in the connecting structure, the coupling cavity is communicated with the first electronic channel and the second electronic channel, and the ratio of the resonant frequency of the coupling cavity to the central working frequency of the staggered double-gate slow-wave structure ranges from 0.95 to 1.05. Through the technical scheme provided by the invention, the technical problem that the output power of the staggered double-gate slow wave structure in the prior art is relatively low can be solved.

Description

Technical Field

[0001] The present invention relates to the technical field of vacuum electronic devices, and in particular to an interlaced double-grid slow-wave structure and a traveling wave tube having the same. Background Art

[0002] At present, in electric vacuum devices such as traveling wave tubes, microwaves and electrons exchange energy through injection wave interaction, thereby achieving microwave signal amplification. The slow-wave structure plays a particularly important role in traveling wave tubes. The performance of the slow-wave structure determines the efficiency of the injection wave interaction, which is where the energy transfer between the high-frequency electric field and the electron beam occurs. The appropriate slow-wave structure can enhance the effect of the injection wave interaction and significantly improve the working performance of the device.

[0003] However, the conventional rectangular staggered double-grid slow-wave structure has a low efficiency of wave injection interaction, resulting in insufficient output power. In order to improve the output power and efficiency of the staggered double-grid slow-wave structure, the prior art is to improve its coupling impedance and dispersion characteristics by using different deformation structures based on the rectangular grid structure. However, this improvement method makes the slow-wave structure complex, increases the difficulty of processing, and increases the manufacturing cost. Summary of the invention

[0004] The main purpose of the present invention is to provide a staggered double-grid slow-wave structure and a traveling wave tube having the same, so as to solve the technical problem of low output power of the staggered double-grid slow-wave structure in the prior art.

[0005] In order to achieve the above object, according to one aspect of the present invention, a staggered double-gate slow-wave structure is provided, comprising:

[0006] The first slow-wave structure comprises a first gate body portion and a second gate body portion located below the first gate body portion and spaced apart from the first gate body portion, wherein a first electron channel is provided in a gap between the first gate body portion and the second gate body portion; and a gate of the first gate body portion and a gate of the second gate body portion are staggered.

[0007] The second slow-wave structure comprises a third gate body portion and a fourth gate body portion located below the third gate body portion and spaced apart from the third gate body portion, wherein a second electron channel is provided in a gap between the third gate body portion and the fourth gate body portion; and a gate of the third gate body portion and a gate of the fourth gate body portion are arranged in a staggered manner;

[0008] A connecting structure, one side of the connecting structure is connected to the first slow-wave structure, and the other side of the connecting structure is connected to the second slow-wave structure; a coupling cavity is arranged on the connecting structure, and the first electron channel and the second electron channel are both connected to the coupling cavity;

[0009] Wherein, the ratio of the resonance frequency of the coupling cavity to the central operating frequency of the staggered double-gate slow-wave structure is greater than or equal to 0.95 and less than or equal to 1.05.

[0010] Furthermore, the connection structure includes:

[0011] A first connection structure and a second connection structure are spaced apart from each other, the first connection structure is located above the second connection structure, and a connecting electron channel is provided in the gap between the first connection structure and the second connection structure; one end of the connecting electron channel is connected to the first electron channel, and the other end of the connecting electron channel is connected to the second electron channel.

[0012] Furthermore, a first cavity segment is provided on the first connection structure, a second cavity segment arranged opposite to the first cavity segment is provided on the second connection structure, and the first cavity segment, the second cavity segment and the gap between the first cavity segment and the second cavity segment form a coupling cavity.

[0013] Further, along the first preset direction, the cross section of the coupling cavity is rectangular; and / or,

[0014] Along the second preset direction, the cross section of the coupling cavity is rectangular.

[0015] Further, the coupling cavity is a rectangular parallelepiped structure, a is the length of the coupling cavity, b is the height of the coupling cavity; t is the width of the coupling cavity;

[0016] in, μ is the magnetic permeability, ε is the dielectric constant, and f is the central operating frequency of the staggered double-grid slow-wave structure; and / or,

[0017] Along the direction from the first slow-wave structure to the second slow-wave structure, the distance between the middle of the gate of the first gate body portion and the middle of the gate of the second gate body portion is D; 0.1≤t / D≤1.5.

[0018] Further, the coupling cavity is a rectangular parallelepiped structure, a is the length of the coupling cavity, and b is the height of the coupling cavity;

[0019] Wherein, 0<a / A≤5, A is the length of the staggered double-gate slow-wave structure; and / or,

[0020] 0<b / B≤5, B is the height of the staggered double-gate slow-wave structure.

[0021] Furthermore, there are multiple coupling cavities, and the multiple coupling cavities are arranged at intervals along the direction from the first slow-wave structure to the second slow-wave structure;

[0022] Among them, along the direction from the first slow-wave structure to the second slow-wave structure, the distance between the middle parts of two adjacent coupling cavities is d, d=n×v / f; n is a positive integer, v is the movement speed of electrons in the staggered double-gate slow-wave structure, and f is the central operating frequency of the staggered double-gate slow-wave structure.

[0023] Further, the first slow-wave structure is made of a conductive material; and / or,

[0024] The second slow-wave structure is made of a conductive material; and / or,

[0025] The connecting structure is made of conductive material.

[0026] Furthermore, the staggered double-gate slow-wave structure also includes:

[0027] A waveguide input channel and a waveguide output channel, wherein the waveguide input channel is arranged on the first slow-wave structure, and the waveguide input channel is connected to the first electronic channel; the waveguide output channel is arranged on the second slow-wave structure, and the waveguide output channel is connected to the second electronic channel; and / or,

[0028] A first microwave lead-out channel is provided on the first slow-wave structure, and the first microwave lead-out channel is connected to the first electronic channel; the first microwave lead-out channel is located on a side of the first slow-wave structure close to the connection structure; and / or,

[0029] The second microwave lead-out channel is arranged on the second slow-wave structure, and the second microwave lead-out channel is connected with the second electronic channel; the second microwave lead-out channel is located on a side of the second slow-wave structure close to the connection structure.

[0030] According to another aspect of the present invention, there is provided a traveling wave tube, comprising: the above-mentioned staggered double-grid slow-wave structure.

[0031] By applying the technical solution of the present invention, by introducing a coupling cavity between the first slow-wave structure and the second slow-wave structure, an additional interaction space can be provided without changing the original staggered double-grid structure design. The resonant frequency of the coupling cavity is designed to be close to the central operating frequency of the staggered double-grid slow-wave structure, which makes the electron beams that pass through the slow-wave structure clustered, and can excite an axial electric field in the coupling cavity, and further interact with the electron beam. When the electron beam passes through the coupling cavity, it can effectively interact with the axial electric field in the coupling cavity, thereby enhancing the clustering effect of the electrons and significantly improving the efficiency of the beam-wave interaction. The enhanced efficiency of the beam-wave interaction directly leads to an increase in the output power of the traveling wave tube. The electron beam fully interacts with the electric field excited in the coupling cavity, making the process of transferring the energy of the electron beam to the microwave signal more efficient, thereby increasing the saturated output power of the traveling wave tube. The introduction of the coupling cavity can optimize the dispersion characteristics of the entire slow-wave structure by accurately adjusting its size and position, so that the phase velocity of the slow-wave structure is closer to the phase velocity of the electron beam, and the influence of frequency offset on the output performance is reduced. This not only improves the output power, but also enables the traveling wave tube to maintain high-efficiency output in a wider frequency range. In addition, under the premise of maintaining structural stability, this solution improves the output performance by adding a coupling cavity, avoiding the manufacturing difficulty and cost increase caused by complex structural design. Therefore, the technical solution of the present invention can solve the technical problem of low output power of the staggered double-grid slow-wave structure in the prior art. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The drawings constituting a part of the present application are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0033] Figure 1 A partial structural schematic diagram of a staggered double-gate slow-wave structure provided according to the first embodiment of the present invention is shown;

[0034] Figure 2 A cross-sectional schematic diagram of a staggered double-gate slow-wave structure provided according to the first embodiment of the present invention is shown;

[0035] Figure 3 A cross-sectional schematic diagram of the staggered double-gate slow-wave structure provided in Embodiment 1 of the present invention at another viewing angle is shown;

[0036] Figure 4 It shows a schematic structural diagram of a coupled cavity with an interlaced double-gate slow-wave structure according to the first embodiment of the present invention;

[0037] Figure 5 A schematic diagram showing the electric field distribution of the coupled cavity of the staggered double-gate slow-wave structure provided according to the first embodiment of the present invention is shown;

[0038] Figure 6 A schematic diagram showing the simulation results of the saturated output power of the staggered double-gate slow-wave structure provided according to the first embodiment of the present invention is shown;

[0039] Figure 7 A schematic diagram comparing the relationship between output power and frequency of the staggered double-gate slow-wave structure provided according to the first embodiment of the present invention and the staggered double-gate slow-wave structure in the prior art is shown.

[0040] The above drawings include the following reference numerals:

[0041] 10. The first slow wave structure;

[0042] 11. a first grid body;

[0043] 12. a second grid body;

[0044] 13. The first electron channel;

[0045] 20. Second slow wave structure;

[0046] 21. The third grid body;

[0047] 22. Fourth grid body;

[0048] 23. Second electron channel;

[0049] 30. Connection structure;

[0050] 31. Coupler cavity;

[0051] 32. A first connection structure;

[0052] 321, first cavity section;

[0053] 33. A second connection structure;

[0054] 331, second cavity section;

[0055] 34. Connect electronic channels;

[0056] 41. Waveguide input channel;

[0057] 42. Waveguide output channel;

[0058] 43. A first microwave derivation channel;

[0059] 44. The second microwave export channel. DETAILED DESCRIPTION

[0060] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0061] like Figures 1 to 7 As shown, the first embodiment of the present invention provides an interlaced double-gate slow-wave structure, and the interlaced double-gate slow-wave structure includes a first slow-wave structure 10, a second slow-wave structure 20 and a connecting structure 30. The first slow-wave structure 10 includes a first gate body portion 11 and a second gate body portion 12 located below the first gate body portion 11 and spaced apart from the first gate body portion 11, and a first electron channel 13 is provided in the gap between the first gate body portion 11 and the second gate body portion 12; the gate of the first gate body portion 11 is misaligned with the gate of the second gate body portion 12. The second slow-wave structure 20 includes a third gate body portion 21 and a fourth gate body portion 22 located below the third gate body portion 21 and spaced apart from the third gate body portion 21, and a second electron channel 23 is provided in the gap between the third gate body portion 21 and the fourth gate body portion 22; the gate of the third gate body portion 21 is misaligned with the gate of the fourth gate body portion 22. One side of the connection structure 30 is connected to the first slow-wave structure 10, and the other side is connected to the second slow-wave structure 20; a coupling cavity 31 is provided on the connection structure 30, and the first electron channel 13 and the second electron channel 23 are both connected to the coupling cavity 31. The ratio of the resonant frequency of the coupling cavity 31 to the central operating frequency of the staggered double-gate slow-wave structure is greater than or equal to 0.95 and less than or equal to 1.05.

[0062] By adopting the staggered double-grid slow-wave structure provided in the first embodiment of the present invention, by introducing the coupling cavity 31 between the first slow-wave structure 10 and the second slow-wave structure 20, an additional interaction space can be provided without changing the original staggered double-grid structure design. The resonant frequency of the coupling cavity 31 is designed to be close to the central operating frequency of the staggered double-grid slow-wave structure, which allows the electron beams that pass through the slow-wave structure to cluster, and can excite an axial electric field in the coupling cavity 31, and further interact with the electron beam. When passing through the coupling cavity 31, the electron beam can effectively interact with the axial electric field in the coupling cavity 31, thereby enhancing the clustering effect of the electrons and significantly improving the efficiency of the beam-wave interaction. The enhanced beam-wave interaction efficiency directly leads to an increase in the output power of the traveling wave tube. The electron beam fully interacts with the electric field excited in the coupling cavity 31, making the process of transferring the energy of the electron beam to the microwave signal more efficient, thereby increasing the saturated output power of the traveling wave tube. The introduction of the coupling cavity 31 can optimize the dispersion characteristics of the entire slow-wave structure by precisely adjusting its size and position, making the phase velocity of the slow-wave structure closer to the phase velocity of the electron beam, and reducing the impact of frequency offset on the output performance. This not only improves the output power, but also allows the traveling wave tube to maintain high-efficiency output over a wider frequency range. In addition, while maintaining structural stability, this solution improves the output performance by adding the coupling cavity 31, thereby avoiding the manufacturing difficulty and cost increase problems caused by complex structural design. Therefore, the staggered double-gate slow-wave structure provided in this embodiment can solve the technical problem of low output power of the staggered double-gate slow-wave structure in the prior art.

[0063] like Figure 6 As shown, when the operating voltage is 23.8 kV, the operating current is 50 mA, and the frequency is 220 GHz, the saturated output power of the staggered double-gate slow-wave structure in this scheme can reach 65 W, and the gain is 31.1 dB.

[0064] like Figure 7 As shown, compared with the staggered double-gate slow-wave structure in the prior art, within a certain frequency range, the output power of the staggered double-gate slow-wave structure of this solution is greater.

[0065] Specifically, the connection structure 30 includes a first connection structure 32 and a second connection structure 33 spaced apart from each other, the first connection structure 32 is located above the second connection structure 33, and a connection electron channel 34 is provided in the gap between the first connection structure 32 and the second connection structure 33; one end of the connection electron channel 34 is connected to the first electron channel 13, and the other end of the connection electron channel 34 is connected to the second electron channel 23. With such a structural arrangement, the connection electron channel 34 ensures the integrity of the electron injection path, avoids interruption of electron transmission, thereby maintaining the continuity of injection-wave interaction and improving energy conversion efficiency.

[0066] Specifically, a first cavity section 321 is provided on the first connection structure 32, and a second cavity section 331 is provided on the second connection structure 33, which is arranged opposite to the first cavity section 321. The first cavity section 321, the second cavity section 331, and the gap between the first cavity section 321 and the second cavity section 331 form a coupling cavity 31. With such a structural setting, the formation of the coupling cavity 31 provides an additional interaction space between the electron beam and the axial electric field, thereby enhancing the clustering effect of the electron beam. When the electron beam passes through the coupling cavity 31, it can effectively interact with the axial electric field excited in the cavity, thereby increasing the extraction efficiency of microwave energy and improving the output power and gain of the traveling wave tube. Integrating the design of the coupling cavity 31 into the connection structure 30 not only optimizes the spatial layout inside the traveling wave tube, making the structure more compact, but also realizes the effective residence and enhancement of microwave energy in the coupling cavity 31 through the relative positions of the first cavity section 321 and the second cavity section 331, further improving the beam-wave interaction. This design ensures that the performance indicators of the traveling wave tube are improved without increasing the complexity of the overall structure.

[0067] Specifically, the coupling cavity 31 is connected to the connecting electron channel 34. Specifically, the connecting electron channel 34 includes a first connecting electron channel and a second connecting electron channel. One side of the coupling cavity 31 is connected to the first connecting electron channel, and the other side is connected to the second connecting electron channel.

[0068] In this embodiment, along the first preset direction, the cross section of the coupling cavity 31 is rectangular. Compared with other shapes, such as circular or elliptical, the rectangular cross-sectional design can provide better mechanical stability and strength, and is easy to process. In the high-power working environment of vacuum electronic devices, mechanical stability is particularly important, which can reduce the deformation or resonance of the structure under high-frequency vibration, thereby ensuring the long-term stable operation of the device.

[0069] In this embodiment, along the second preset direction, the cross section of the coupling cavity 31 is rectangular. Compared with other shapes, such as circular or elliptical, the rectangular cross-sectional design can provide better mechanical stability and strength, and is easy to process. In the high-power working environment of vacuum electronic devices, mechanical stability is particularly important, which can reduce the deformation or resonance of the structure under high-frequency vibration, thereby ensuring the long-term stable operation of the device.

[0070] It should be noted that the first preset direction is the length direction of the staggered double-gate slow-wave structure, and the second preset direction is the height direction of the staggered double-gate slow-wave structure.

[0071] Specifically, the coupling cavity 31 is a rectangular parallelepiped structure, a is the length of the coupling cavity 31, b is the height of the coupling cavity 31, and t is the width of the coupling cavity 31; wherein, μ is the magnetic permeability, ε is the dielectric constant, and f is the central operating frequency of the staggered double-grid slow-wave structure. With such a structural setting, the resonant frequency of the coupling cavity 31 can be ensured to be consistent with the operating frequency of the staggered double-grid slow-wave structure by setting the length and height of the coupling cavity 31, thereby providing the best coupling conditions between microwaves and electron beams. The electron beam can interact efficiently with the axial electric field in the coupling cavity 31, enhance the clustering effect, improve the energy conversion efficiency, and thus make the output power and gain of the traveling wave tube reach the optimal state.

[0072] It should be noted that in a vacuum, the magnetic permeability is 4×10 -7 H / m. In a vacuum, the dielectric constant is 8.854187817×10 -7 F / m.

[0073] Specifically, the coupling cavity 31 is a rectangular parallelepiped structure, and t is the width of the coupling cavity 31. In the direction from the first slow-wave structure 10 to the second slow-wave structure 20, the spacing between the middle of the grid of the first grid body 11 and the middle of the grid of the second grid body 12 is D; 0.1≤t / D≤1.5. With such a structural setting, since the width of the coupling cavity 31 affects the coupling impedance of the coupling cavity 31, such a value can make the coupling cavity 31 have a higher coupling impedance.

[0074] Specifically, the coupling cavity 31 is a rectangular parallelepiped structure, and a is the length of the coupling cavity 31. Among them, 0<a / A≤5, A is the length of the staggered double-gate slow-wave structure. The use of such a structural setting ensures the reasonable distribution of the coupling cavity 31 in the slow-wave structure, and avoids the negative impact of the coupling cavity 31 that is too long or too short on the overall structure and performance. The appropriate ratio helps to form a good transition between the coupling cavity 31 and the slow-wave structure, ensuring the continuity and efficient transmission of the electron beam between different structures.

[0075] Specifically, the coupling cavity 31 is a rectangular parallelepiped structure, and b is the height of the coupling cavity 31. Among them, 0<b / B≤5, and B is the height of the staggered double-grid slow-wave structure. The use of such a structural setting ensures that the size of the coupling cavity 31 in the vertical direction matches the slow-wave structure, which not only ensures sufficient axial electric field strength to enhance the injection-wave interaction, but also avoids structural instability or microwave energy loss caused by the cavity being too high or too low. The appropriate ratio helps to optimize the field distribution of microwaves in the coupling cavity and improve the overall efficiency and stability of the device.

[0076] Specifically, Figure 4 As shown, a=1.28 mm, b=0.81 mm, t=0.24 mm, and the radius of the connecting electron channel 34 is r=0.1 mm.

[0077] Specifically, Figure 5As shown, the lowest oscillation mode of the coupling cavity 31 is TE 110 mode, and the resonant frequency is 220.75 GHz, which is close to the central operating frequency of the slow-wave structure. The electric field direction is a uniform field in the axial direction connecting the electron channel 34, and the field strength is strongest at the center, i.e., the connection point between the electron channel 34 and the coupling cavity 31, which can effectively interact with the electron beam and make the electron clustering state better.

[0078] In this embodiment, there are multiple coupling cavities 31, and multiple coupling cavities 31 are arranged at intervals along the direction from the first slow-wave structure 10 to the second slow-wave structure 20. Among them, along the direction from the first slow-wave structure 10 to the second slow-wave structure 20, the spacing between the middle parts of two adjacent coupling cavities 31 is d, d = n × v / f; n is a positive integer, v is the moving speed of the electrons in the staggered double-grid slow-wave structure, and f is the central operating frequency of the staggered double-grid slow-wave structure. With such a structural setting, this design ensures that the electron beam can reach the best clustering state when passing through each coupling cavity 31, thereby enhancing the interaction efficiency with the microwave signal. By adjusting the number of coupling cavities 31, it is also possible to adapt to traveling wave tubes with different electron speeds and operating frequencies, and achieve efficient operation in a wider bandwidth.

[0079] Specifically, the first slow-wave structure 10 is made of a conductive material. The second slow-wave structure 20 is made of a conductive material. The connecting structure 30 is made of a conductive material. Specifically, the first slow-wave structure 10 is made of a conductive metal material. The second slow-wave structure 20 is made of a conductive metal material. The connecting structure 30 is made of a conductive metal material. By adopting such a structural setting and selecting a conductive material as a structural material, the electrical loss inside the traveling wave tube can be effectively reduced and the signal transmission efficiency can be improved. The use of conductive materials, especially highly conductive metals, can also improve the heat dissipation performance and enhance the thermal stability of the device, thereby extending the service life of the traveling wave tube under high-power operating conditions. In addition, the all-metal structure is conducive to improving the mechanical strength of the structure, reducing vibration and deformation under high-frequency operation, and ensuring the stable operation of the traveling wave tube.

[0080] In this embodiment, the staggered double-grid slow-wave structure also includes a waveguide input channel 41 and a waveguide output channel 42. The waveguide input channel 41 is arranged on the first slow-wave structure 10, and the waveguide input channel 41 is connected to the first electronic channel 13; the waveguide output channel 42 is arranged on the second slow-wave structure 20, and the waveguide output channel 42 is connected to the second electronic channel 23. The use of such a structural setting ensures that the microwave signal can be introduced into the slow-wave structure from the outside with minimal loss, and at the same time, the amplified signal can be smoothly exported to the external system through the waveguide output channel 42. The use of the waveguide channel, especially the direct connection with the electronic channel, reduces reflection and leakage during signal transmission, improves the input and output matching of the traveling wave tube, and thus improves its working efficiency and output power.

[0081] Specifically, the waveguide input channel 41 and the waveguide output channel 42 both adopt the standard rectangular waveguide WR-4.

[0082] Specifically, the staggered double-grid slow-wave structure further includes a first microwave lead-out channel 43, which is disposed on the first slow-wave structure 10 and is connected to the first electronic channel 13; the first microwave lead-out channel 43 is located on one side of the first slow-wave structure 10 close to the connection structure 30. With such a structural arrangement, microwave signals can be quickly led out, unnecessary energy loss is reduced, and the output stability and efficiency of the traveling wave tube are improved.

[0083] Specifically, the staggered double-grid slow-wave structure further includes a second microwave lead-out channel 44, which is disposed on the second slow-wave structure 20 and is connected to the second electronic channel 23; the second microwave lead-out channel 44 is located on one side of the second slow-wave structure 20 close to the connection structure 30. With such a structural arrangement, microwave signals can be quickly led out, unnecessary energy loss is reduced, and the output stability and efficiency of the traveling wave tube are improved.

[0084] A second embodiment of the present invention provides a traveling wave tube, which includes the staggered double-grid slow-wave structure provided in the first embodiment.

[0085] The traveling wave tube provided by the second embodiment of the present invention can provide an additional interaction space without changing the original staggered double-grid structure design by introducing a coupling cavity 31 between the first slow-wave structure 10 and the second slow-wave structure 20. The resonant frequency of the coupling cavity 31 is designed to be close to the central operating frequency of the staggered double-grid slow-wave structure, so that the electron beam can effectively interact with the axial electric field in the coupling cavity 31 when passing through the coupling cavity, thereby enhancing the clustering effect of the electrons and significantly improving the efficiency of the beam-wave interaction. The enhanced beam-wave interaction efficiency directly leads to an increase in the output power of the traveling wave tube. The electron beam fully interacts with the electric field excited in the coupling cavity 31, making the process of transferring the energy of the electron beam to the microwave signal more efficient, thereby increasing the saturated output power of the traveling wave tube. The introduction of the coupling cavity 31 can optimize the dispersion characteristics of the entire slow-wave structure by precisely adjusting its size and position, so that the phase velocity of the slow-wave structure is closer to the phase velocity of the electron beam, and the influence of frequency offset on the output performance is reduced. This not only improves the output power, but also enables the traveling wave tube to maintain high-efficiency output in a wider frequency range. In addition, under the premise of maintaining structural stability, this solution improves output performance by adding a coupling cavity 31, thereby avoiding the manufacturing difficulty and cost increase caused by complex structural design. Therefore, the traveling wave tube provided by this embodiment can solve the technical problem of low output power of the staggered double-grid slow-wave structure in the prior art.

[0086] Specifically, the traveling wave tube is a truncated traveling wave tube.

[0087] From the above description, it can be seen that the above-mentioned embodiments of the present invention achieve the following technical effects: only a coupled cavity is added on the basis of the conventional rectangular staggered double-gate slow-wave structure, and the original structural parameters only need to be fine-tuned, and the coupled cavity structure is simple and easy to process, which can effectively improve the output power and efficiency of the traveling wave tube device.

[0088] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0089] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values ​​of the parts and steps set forth in these embodiments do not limit the scope of the application. Meanwhile, it should be understood that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to actual proportional relationships. The technology, methods and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but in appropriate cases, the technology, methods and equipment should be considered as a part of the specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, and therefore, once a certain item is defined in an accompanying drawing, it does not need to be further discussed in subsequent drawings.

[0090] In the description of the present application, it should be understood that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or element referred to must have a specific direction or be constructed and operated in a specific direction, and therefore cannot be understood as limiting the scope of protection of the present application; the directional words "inside and outside" refer to the inside and outside relative to the outline of each component itself.

[0091] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used here to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" may include both "above" and "below". The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0092] In addition, it should be noted that the use of terms such as "first" and "second" to limit components is only for the convenience of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore cannot be understood as limiting the scope of protection of this application.

[0093] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A staggered double-gate slow-wave structure, characterized in that: include: A first slow-wave structure (10) comprises a first gate body portion (11) and a second gate body portion (12) located below the first gate body portion (11) and spaced apart from the first gate body portion (11); a first electron channel (13) is provided in a gap between the first gate body portion (11) and the second gate body portion (12); a gate of the first gate body portion (11) and a gate of the second gate body portion (12) are staggered; The second slow-wave structure (20) comprises a third grid body portion (21) and a fourth grid body portion (22) located below the third grid body portion (21) and spaced apart from the third grid body portion (21), wherein a second electron channel (23) is provided in a gap between the third grid body portion (21) and the fourth grid body portion (22); and a gate of the third grid body portion (21) and a gate of the fourth grid body portion (22) are arranged in a staggered manner; a connecting structure (30), wherein one side of the connecting structure (30) is connected to the first slow-wave structure (10), and the other side of the connecting structure (30) is connected to the second slow-wave structure (20); a coupling cavity (31) is provided on the connecting structure (30), and the first electron channel (13) and the second electron channel (23) are both connected to the coupling cavity (31); Wherein, the ratio of the resonance frequency of the coupling cavity (31) to the central operating frequency of the staggered double-gate slow-wave structure is greater than or equal to 0.95 and less than or equal to 1.

05.

2. The staggered double-gate slow-wave structure according to claim 1, characterized in that: The connection structure (30) comprises: A first connecting structure (32) and a second connecting structure (33) are spaced apart from each other, wherein the first connecting structure (32) is located above the second connecting structure (33), and a connecting electron channel (34) is provided in the gap between the first connecting structure (32) and the second connecting structure (33); one end of the connecting electron channel (34) is connected to the first electron channel (13), and the other end of the connecting electron channel (34) is connected to the second electron channel (23).

3. The staggered double-gate slow-wave structure according to claim 2, characterized in that: The first connecting structure (32) is provided with a first cavity segment (321), the second connecting structure (33) is provided with a second cavity segment (331) arranged opposite to the first cavity segment (321), and the first cavity segment (321), the second cavity segment (331) and the gap between the first cavity segment (321) and the second cavity segment (331) form the coupling cavity (31).

4. The staggered double-gate slow-wave structure according to claim 1, characterized in that: Along the first preset direction, the cross section of the coupling cavity (31) is rectangular; and / or, Along the second preset direction, the cross section of the coupling cavity (31) is rectangular.

5. The staggered double-gate slow-wave structure according to claim 1, characterized in that: The coupling cavity (31) is a rectangular parallelepiped structure, a is the length of the coupling cavity (31), b is the height of the coupling cavity (31); and t is the width of the coupling cavity (31); in, μ is the magnetic permeability, ε is the dielectric constant, and f is the central operating frequency of the staggered double-grid slow-wave structure; and / or, Along the direction from the first slow-wave structure (10) to the second slow-wave structure (20), the distance between the middle of the gate of the first gate body (11) and the middle of the gate of the second gate body (12) is D; 0.1≤t / D≤1.

5.

6. The staggered double-gate slow-wave structure according to claim 1, characterized in that: The coupling cavity (31) is a rectangular parallelepiped structure, a is the length of the coupling cavity (31), and b is the height of the coupling cavity (31); Wherein, 0<a / A≤5, A is the length of the staggered double-gate slow-wave structure; and / or, 0<b / B≤5, B is the height of the staggered double-gate slow-wave structure.

7. The staggered double-gate slow-wave structure according to claim 1, characterized in that: There are a plurality of coupling cavities (31), and along the direction from the first slow-wave structure (10) to the second slow-wave structure (20), the plurality of coupling cavities (31) are arranged at intervals; Wherein, along the direction from the first slow-wave structure (10) to the second slow-wave structure (20), the spacing between the middle parts of two adjacent coupling cavities (31) is d, d=n×v / f; n is a positive integer, v is the moving speed of electrons in the staggered double-gate slow-wave structure, and f is the central operating frequency of the staggered double-gate slow-wave structure.

8. The staggered double-gate slow-wave structure according to claim 1, characterized in that: The first slow-wave structure (10) is made of a conductive material; and / or, The second slow-wave structure (20) is made of a conductive material; and / or, The connecting structure (30) is made of a conductive material.

9. The staggered double-gate slow-wave structure according to claim 1, characterized in that: The staggered double-gate slow-wave structure also includes: a waveguide input channel (41) and a waveguide output channel (42), wherein the waveguide input channel (41) is arranged on the first slow-wave structure (10), and the waveguide input channel (41) is connected to the first electronic channel (13); the waveguide output channel (42) is arranged on the second slow-wave structure (20), and the waveguide output channel (42) is connected to the second electronic channel (23); and / or, A first microwave lead-out channel (43) is provided on the first slow-wave structure (10), wherein the first microwave lead-out channel (43) is connected to the first electron channel (13); the first microwave lead-out channel (43) is located at the The first slow-wave structure (10) is close to one side of the connecting structure (30); and / or, A second microwave lead-out channel (44) is provided on the second slow-wave structure (20), and the second microwave lead-out channel (44) is connected to the second electron channel (23); the second microwave lead-out channel (44) is located in the The second slow-wave structure (20) is close to one side of the connecting structure (30).

10. A traveling wave tube, characterized in that: include: The staggered double-gate slow-wave structure according to any one of claims 1 to 9.

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