Lower electrode device, semiconductor process control method and semiconductor process equipment

Abstract

The invention provides a lower electrode device, a semiconductor process control method and semiconductor process equipment, the lower electrode device comprises a bearing part, a focusing ring and a control power supply, the bearing part is used for bearing a wafer and is used for being electrically connected with a radio frequency source, and the radio frequency source is used for loading radio frequency to the bearing part to enable the bearing part to generate self-bias voltage; the focusing ring is arranged around the bearing part and can surround the periphery of a wafer borne on the bearing part, the positive electrode of the control power source is electrically connected with the radio frequency source, the negative electrode of the control power source is electrically connected with the focusing ring, the control power source is used for loading control voltage to the focusing ring, and the control voltage comprises self-bias voltage and compensation voltage corresponding to the thickness of the focusing ring. According to the lower electrode device, the semiconductor process control method and the semiconductor process equipment provided by the invention, the accuracy of the control voltage can be improved, the measurement and calculation of the control voltage can be simple and convenient, and the real-time performance of the control voltage can be improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a lower electrode device, a semiconductor process control method and semiconductor process equipment. Background Art

[0002] In the plasma etching process, the wafer to be etched is adsorbed and carried on an electrostatic chuck (ESC). A focus ring (FR) is arranged around the electrostatic chuck. The electrostatic chuck is electrically connected to a radio frequency source (RF). The RF source is used to load radio frequency to the electrostatic chuck so that the electrostatic chuck generates self-bias to attract plasma to etch the wafer. The focus ring can surround the wafer to gather plasma, so as to increase the etching rate and uniformity of the etching morphology in the edge area of ​​the wafer and improve the plasma etching effect.

[0003] In the plasma etching process, both the wafer and the focus ring will be etched by the plasma. As the plasma etching process time increases, the thickness of the focus ring will gradually decrease, which will cause the shape of the plasma sheath above the wafer edge area to change, causing the incident direction of the plasma in the wafer edge area to tilt (such as Figure 1 As shown in FIG. 1 , the etching morphology of the wafer edge region is affected, and the plasma etching effect is affected. Therefore, in the prior art, when the thickness of the focus ring is reduced, a control voltage is applied to the focus ring to control the shape of the plasma sheath above the wafer edge region.

[0004] However, in the prior art, the accuracy of the control voltage is low, and the control over the shape of the plasma sheath above the edge region of the wafer is poor, which affects the plasma etching effect. In addition, the calculation of the voltage value of the control voltage is relatively complex and has poor real-time performance. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a lower electrode device, a semiconductor process control method and a semiconductor process equipment, which can improve the accuracy of the control voltage, simplify the measurement of the control voltage, and improve the real-time performance of the control voltage.

[0006] In order to achieve the purpose of the present invention, a lower electrode device is provided, including a carrying component, a focusing ring and a control power supply, wherein the carrying component is used to carry a wafer and is used to be electrically connected to a radio frequency source, the radio frequency source is used to load radio frequency to the carrying component so that the carrying component generates a self-bias voltage, the focusing ring is arranged around the carrying component and can surround the wafer carried on the carrying component, the positive electrode of the control power supply is electrically connected to the radio frequency source, the negative electrode of the control power supply is electrically connected to the focusing ring, the control power supply is used to load a control voltage to the focusing ring, and the control voltage includes the self-bias voltage and a compensation voltage corresponding to the thickness of the focusing ring.

[0007] Optionally, the lower electrode device also includes a feeding component, which is electrically connected to the bottom of the supporting component and to the RF source. The RF source is used to load RF to the supporting component through the feeding component, and the positive pole of the control power supply is electrically connected to the feeding component so as to be electrically connected to the RF source through the feeding component.

[0008] Optionally, the lower electrode device further includes an electrical connection component, wherein the electrical connection component is electrically connected to the focus ring and the negative electrode of the control power supply respectively, and the control power supply loads a control voltage to the focus ring through the electrical connection component.

[0009] Optionally, the lower electrode device further comprises a lower electrode component, wherein the lower electrode component is arranged at the bottom of the supporting component, the feeding component and the electrical connection component are respectively arranged to penetrate the lower electrode component, and the feeding component and the electrical connection component are insulated from each other.

[0010] Optionally, the lower electrode component includes a conductive part and an insulating part, the insulating part is ring-shaped and surrounds at least a portion of the conductive part, and is located below the focusing ring corresponding to the focusing ring, the feeding component is arranged through the conductive part, the electrical connection component is arranged through the conductive part and the insulating part, and is insulated from the conductive part.

[0011] Optionally, the electrical connection assembly includes an electrical plug-in component, a conductive component and an electrical connection component, the electrical plug-in component is used for plugging in the negative pole of the control power supply, the electrical connection component is electrically connected to the focusing ring, and is electrically connected to the electrical plug-in component through the conductive component.

[0012] Optionally, there are multiple electrical connection components, and there are multiple conductive components. The multiple electrical connection components are spaced apart along the circumference of the focusing ring, and the multiple electrical connection components are electrically connected to the electrical plug-in component through the multiple conductive components one by one.

[0013] Optionally, the lower electrode device also includes a pressure ring, which is arranged around the supporting component and is located between the focusing ring and the lower electrode component, and a portion of the pressure ring is pressed on a partial edge of the supporting component, and the electrical connection component is arranged through the pressure ring.

[0014] Optionally, the lower electrode device further includes a first filter component and / or a second filter component, the positive electrode of the control power supply is electrically connected to the RF source through the first filter component, and the negative electrode of the control power supply is electrically connected to the focusing ring through the second filter component.

[0015] Optionally, the control voltage is equal to the sum of the self-bias voltage and the compensation voltage.

[0016] The present invention also provides a semiconductor process control method, using the lower electrode device provided by the present invention, the semiconductor process control method comprises:

[0017] Controlling the radio frequency source to load radio frequency onto the bearing component;

[0018] The output voltage of the control power supply is set to the compensation voltage corresponding to the thickness of the focus ring.

[0019] The present invention also provides a semiconductor process equipment, including a process chamber, a radio frequency source and the lower electrode device provided by the present invention, wherein the lower electrode device is arranged in coordination with the process chamber, and the radio frequency source is electrically connected to the supporting component.

[0020] The present invention has the following beneficial effects:

[0021] The lower electrode device provided by the present invention can make the reference potential of the control power supply always equal to the self-bias voltage of the bearing component by electrically connecting the positive electrode of the control power supply to the radio frequency source. That is to say, the reference potential of the control power supply can change with the change of the self-bias voltage of the bearing component and is always equal to the self-bias voltage of the bearing component. In this way, when setting the control voltage loaded by the control power supply to the focusing ring, it is only necessary to set the compensation voltage corresponding to the thickness of the focusing ring, and there is no need to detect and set the self-bias voltage of the bearing component. That is to say, when loading the control voltage to the focusing ring through the control power supply, it is only necessary to control the radio frequency source to load the radio frequency to the bearing component, and set the output voltage of the control power supply to the compensation voltage corresponding to the thickness of the focusing ring, so that the voltage loaded by the control power supply to the focusing ring can be a control voltage including the self-bias voltage and the compensation voltage, thereby avoiding the problem of the control voltage caused by the detection error of the self-bias voltage or the fluctuation of the self-bias voltage itself, thereby improving the accuracy of the control voltage, making the measurement of the control voltage simple, and improving the real-time performance of the control voltage.

[0022] The semiconductor process control method provided by the present invention, with the help of the lower electrode device provided by the present invention, when the control voltage is loaded onto the focusing ring by the control power supply, it is only necessary to control the radio frequency source to load the radio frequency onto the bearing component, and set the output voltage of the control power supply to the compensation voltage corresponding to the thickness of the focusing ring, so that the voltage loaded onto the focusing ring by the control power supply can be a control voltage including the self-bias voltage and the compensation voltage, without the need to detect and set the self-bias voltage of the bearing component, thereby avoiding the problems caused by the detection error of the self-bias voltage or the fluctuation of the self-bias voltage itself, thereby improving the accuracy of the control voltage, making the measurement of the control voltage simple, and improving the real-time performance of the control voltage.

[0023] The semiconductor process equipment provided by the present invention can improve the accuracy of the control voltage by means of the lower electrode device provided by the present invention, can simplify the measurement of the control voltage, and can improve the real-time performance of the control voltage. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 Schematic diagram of the plasma sheath and the incident direction of the plasma when the thickness of the focusing ring is reduced;

[0025] Figure 2 A schematic structural diagram of a lower electrode device and a semiconductor process equipment provided by an embodiment of the present invention;

[0026] Figure 3 A partial front view structural diagram of a lower electrode device provided in an embodiment of the present invention;

[0027] Figure 4 A schematic diagram of a partial top view of the structure of a lower electrode device provided in an embodiment of the present invention;

[0028] Figure 5 Another structural schematic diagram of a lower electrode device and a semiconductor process equipment provided by an embodiment of the present invention;

[0029] Figure 6 A flowchart of a semiconductor process control method provided by an embodiment of the present invention;

[0030] Description of reference numerals:

[0031] 1-carrying component; 2-focusing ring; 3-RF source; 31-matching device; 4-control power supply; 5-feeding component; 6-electrical connection component; 61-electrical plug component; 62-conductive component; 63-electrical connection component; 7-lower electrode component; 71-conductive part; 72-insulating part; 8-pressure ring; 91-first filter component; 92-second filter component; 100-semiconductor process equipment; 101-process chamber; 200-wafer. DETAILED DESCRIPTION

[0032] In order to enable those skilled in the art to better understand the technical solution of the present invention, the lower electrode device, semiconductor process control method and semiconductor process equipment provided by the present invention are described in detail below with reference to the accompanying drawings.

[0033] like Figure 2-Figure 5 As shown, an embodiment of the present invention provides a lower electrode device, including a carrying component 1, a focusing ring 2 and a control power supply 4, the carrying component 1 is used to carry a wafer 200, and is used to be electrically connected to a radio frequency source 3, the radio frequency source 3 is used to load radio frequency to the carrying component 1, so that the carrying component 1 generates a self-bias, the focusing ring 2 is arranged around the carrying component 1, and can surround the wafer 200 carried on the carrying component 1, the positive electrode of the control power supply 4 is electrically connected to the radio frequency source 3, the negative electrode of the control power supply 4 is electrically connected to the focusing ring 2, the control power supply 4 is used to load a control voltage to the focusing ring 2, and the control voltage includes a self-bias and a compensation voltage corresponding to the thickness of the focusing ring 2.

[0034] The lower electrode device provided by the embodiment of the present invention can make the reference potential of the control power supply 4 always equal to the self-bias voltage of the supporting component 1 by electrically connecting the positive electrode of the control power supply 4 to the RF source 3. That is, the reference potential of the control power supply 4 can change with the change of the self-bias voltage of the supporting component 1 and is always equal to the self-bias voltage of the supporting component 1. In this way, when setting the control voltage loaded by the control power supply 4 to the focusing ring 2, it is only necessary to set the compensation voltage corresponding to the thickness of the focusing ring 2, and there is no need to detect and set the self-bias voltage of the supporting component 1. That is, when loading the control voltage to the focusing ring 2 through the control power supply 4, it is only necessary to control the RF source 3 to load the RF to the supporting component 1, and set the output voltage of the control power supply 4 to the compensation voltage corresponding to the thickness of the focusing ring 2, so that the voltage loaded by the control power supply 4 to the focusing ring 2 can be a control voltage including the self-bias voltage and the compensation voltage, thereby avoiding the problem of the control voltage caused by the detection error of the self-bias voltage or the fluctuation of the self-bias voltage itself, thereby improving the accuracy of the control voltage, making the measurement of the control voltage simple, and improving the real-time performance of the control voltage.

[0035] Specifically, when performing a plasma process, since a negative voltage needs to be loaded onto the focusing ring 2 to focus the plasma, the negative pole of the control power supply 4 is electrically connected to the focusing ring 2, and the positive pole of the control power supply 4 is used as a reference potential. The wafer 200 is carried on the carrying component 1, and the RF source 3 loads RF to the carrying component 1 to cause the carrying component 1 to generate a self-bias voltage to attract plasma to bombard the wafer 200. Since the positive pole of the control power supply 4 is electrically connected to the RF source 3, the reference potential of the control power supply 4 can change with the change of the self-bias voltage of the carrying component 1 and is always equal to the self-bias voltage of the carrying component 1. That is to say, the positive pole of the control power supply 4 can be loaded with the self-bias voltage generated by the RF on the carrying component 1. When the control voltage is loaded to the focusing ring 2 through the control power supply 4, the output voltage of the control power supply 4 needs to be set. Since the control power supply 4 has two output electrodes, namely the positive electrode and the negative electrode, the output voltage of the control power supply 4 is the voltage difference between the positive electrode and the negative electrode of the control power supply 4. For example, when the voltage of the positive electrode is V1 and the output voltage is set to V2, the voltage of the negative electrode is V1-V2, that is, the control voltage loaded to the focusing ring 2 is V1-V2.

[0036] In practical applications, the control voltage may optionally be -(|Vx|+ΔV), wherein Vx is the self-bias voltage generated by the carrier component 1, and ΔV is the compensation voltage. That is to say, the control voltage may optionally be equal to the sum of the self-bias voltage and the compensation voltage. In the prior art, since the positive electrode of the control power supply 4 is grounded, the voltage of the positive electrode of the control power supply 4 is 0V, and the output voltage of the control power supply 4 needs to be set to |Vx|+ΔV. In this way, it is necessary to set the compensation voltage and detect and set the self-bias voltage of the carrier component 1, so that the voltage of the negative electrode (i.e., the control voltage loaded to the focusing ring 2) can be -(|Vx|+ΔV). In the embodiment of the present invention, since the positive electrode of the control power supply 4 is electrically connected to the RF source 3, the reference voltage of the control power supply 4 can be made The reference potential of the control power supply 4 is always at the same potential as the self-bias voltage of the supporting component 1, that is, the reference potential of the control power supply 4 can change with the change of the self-bias voltage of the supporting component 1, and is always equal to the self-bias voltage of the supporting component 1. Therefore, the voltage of the positive electrode of the control power supply 4 is always Vx, and it is only necessary to set the output voltage of the control power supply 4 to ΔV, that is, it is only necessary to set the compensation voltage, and there is no need to detect and set the self-bias voltage of the supporting component 1, so that the voltage of the negative electrode (that is, the control voltage loaded to the focusing ring 2) can be -(|Vx|+ΔV).

[0037] Furthermore, in the prior art, when the self-bias voltage of the bearing component 1 is detected, the electrical connection between the negative electrode of the control power supply 4 and the focus ring 2 needs to be disconnected, and then when the output voltage of the control power supply 4 is set, the negative electrode of the control power supply 4 and the focus ring 2 are electrically connected again. However, in the embodiment of the present invention, since it is not necessary to detect and set the self-bias voltage of the bearing component 1, the negative electrode of the control power supply 4 can be always electrically connected to the focus ring 2, and it is not necessary to disconnect the electrical connection between the negative electrode of the control power supply 4 and the focus ring 2. Thus, the problem of the control voltage caused by the detection error of the self-bias voltage or the fluctuation of the self-bias voltage itself (for example, the fluctuation of the self-bias voltage caused by the change of the output waveform of the RF source 3 as a pulse source, or the fluctuation of the self-bias voltage caused by the switching of different RF sources 3 electrically connected to the same bearing component 1, or the fluctuation of the self-bias voltage caused by the interference of other devices, systems or environmental factors (for example, gas flow)) can be avoided, thereby improving the accuracy of the control voltage, making the measurement of the control voltage simple, and improving the real-time performance of the control voltage.

[0038] In actual applications, for the compensation voltage corresponding to the thickness of the focus ring 2, the actual thickness of the focus ring 2 can be measured by a measuring instrument such as a laser measurer or a camera measurer, and then a compensation voltage is preset. Thereafter, the process is carried out with the preset compensation voltage, and the process effect is observed. Then, the preset compensation voltage is adjusted so that the process effect meets the process requirements, thereby recording a compensation voltage corresponding to the thickness of the focus ring 2. Thereafter, when the thickness of the focus ring 2 is reduced to the point where the process effect does not meet the process requirements, the above operation can be repeated, thereby recording another compensation voltage corresponding to the thickness of the focus ring 2. Similarly, a relationship table between the thickness of the focus ring 2 and the compensation voltage can be obtained, thereby enabling the compensation voltage corresponding to the thickness of the focus ring 2 to be set.

[0039] In practical applications, when the focus ring 2 is new, that is, when the thickness of the focus ring 2 is in an initial state, the compensation power supply may not load a control voltage to the focus ring 2 .

[0040] Optionally, the bearing component 1 may be an electrostatic chuck.

[0041] Optionally, the control power supply 4 may be a DC power supply, and the control voltage may be a DC voltage.

[0042] In practical applications, the positive electrode of the control power supply 4 is insulated from the outer casing (for example, the positive electrode of the control power supply 4 and the outer casing can be suspended and not connected), and because the voltage of the positive electrode of the control power supply 4 is always equal to the self-bias voltage of the load-bearing component 1, which is Vx, which may be around -5000V, and the voltage of the outer casing of the control power supply 4 is 0V, the voltage difference between the voltage of the positive electrode of the control power supply 4 and the voltage of the outer casing of the control power supply 4 is large. In order to avoid sparking between the positive electrode of the control power supply 4 and the outer casing, it is necessary to make the insulation and voltage resistance level of the positive electrode of the control power supply 4 and the outer casing greater than |Vx|.

[0043] like Figure 3 and Figure 4 As shown, in one embodiment of the present invention, the lower electrode device may also include a feeding component 5, the feeding component 5 is electrically connected to the bottom of the supporting component 1, the RF source 3 is electrically connected to the feeding component 5, so as to load RF to the supporting component 1 through the feeding component 5, and the positive pole of the control power supply 4 is electrically connected to the feeding component 5, so as to be electrically connected to the RF source 3 through the feeding component 5.

[0044] Optionally, the feed-in component 5 may be electrically connected to an aluminum base at the bottom of the electrostatic chuck.

[0045] That is, the RF source 3 is electrically connected to the feeding component 5, the feeding component 5 is electrically connected to the bottom of the carrying component 1, the RF source 3 is connected to the carrying component 1 through the feeding component 5, and the RF source 3 loads RF to the carrying component 1 through the feeding component 5. The RF source 3 is electrically connected to the feeding component 5, the positive electrode of the control power supply 4 is electrically connected to the feeding component 5, and the positive electrode of the control power supply 4 is electrically connected to the RF source 3 through the feeding component 5.

[0046] However, the positive electrode of the control power supply 4 is not limited to being electrically connected to the RF source 3 through the feeding component 5 (eg Figure 2 As shown), for example, Figure 5 As shown, in actual application, a matcher 31 is provided on the electrical connection path between the RF source 3 and the feeding component 5, and the positive electrode of the control power supply 4 can be electrically connected to the RF source 3 through the matcher 31, or the positive electrode of the control power supply 4 can be electrically connected to the rear section of the matcher 31 on the electrical connection path between the RF source 3 and the feeding component 5 (such as Figure 5 As shown), the positive electrode of the control power supply 4 can also be electrically connected to the RF source 3. That is, the positive electrode of the control power supply 4 can be directly electrically connected to the feeding component 5 (as shown). Figure 2 As shown), it can also be directly electrically connected to the matcher 31, or it can be electrically connected to the rear section of the matcher 31 on the electrical connection path between the RF source 3 and the feeding component 5 (as shown Figure 5 shown).

[0047] like Figure 3 and Figure 4As shown, in one embodiment of the present invention, the lower electrode device may also include an electrical connection component 6, which is electrically connected to the focusing ring 2 and the negative electrode of the control power supply 4 respectively, and the control power supply 4 loads the control voltage to the focusing ring 2 through the electrical connection component 6.

[0048] That is to say, the negative electrode of the control power supply 4 is electrically connected to the focus ring 2 through the electrical connection component 6 , and the control power supply 4 applies the control voltage to the focus ring 2 through the electrical connection component 6 .

[0049] like Figure 2-Figure 5 As shown, in one embodiment of the present invention, the lower electrode device may also include a lower electrode component 7, which is arranged at the bottom of the supporting component 1, and the feeding component 5 and the electrical connection component 6 are respectively arranged to pass through the lower electrode component 7, and the feeding component 5 and the electrical connection component 6 are insulated.

[0050] The feeding component 5 can be fixed by means of the lower electrode component 7, that is, the feeding component 5 can be fixed in the lower electrode component 7. Since the lower electrode component 7 is arranged at the bottom of the bearing component 1, and the focusing ring 2 is arranged around the bearing component 1, it is necessary to set the electrical connection component 6 through the lower electrode component 7 so that the electrical connection component 6 can pass through the lower electrode component 7 and be electrically connected to the focusing ring 2. Since the feeding component 5 is fixed in the lower electrode component 7, it is necessary to insulate the feeding component 5 and the electrical connection component 6 so as to insulate the positive and negative electrodes of the control power supply 4 to avoid short circuit and sparking and damage to the control power supply 4 or other devices.

[0051] like Figure 2-Figure 5 As shown, in one embodiment of the present invention, the lower electrode component 7 may include a conductive portion 71 and an insulating portion 72, the insulating portion 72 is ring-shaped and surrounds at least a portion of the conductive portion 71, and is located below the focusing ring 2 corresponding to the focusing ring 2, the feeding component 5 is arranged through the conductive portion 71, and the electrical connection component 6 is arranged through the conductive portion 71 and the insulating portion 72, and is insulated from the conductive portion 71.

[0052] Specifically, the conductive part 71 may include a conductive base and a conductive protrusion disposed on the conductive base, the conductive base may be disc-shaped, the conductive protrusion may be cylindrical, and the radial dimension of the conductive protrusion may be smaller than the radial dimension of the conductive base, the insulating part 72 may be ring-shaped, and is disposed on the disc-shaped conductive base around the cylindrical conductive protrusion, so that the insulating part 72 surrounds part of the conductive part 71, the conductive protrusion may correspond to the wafer 200 carried by the carrying part 1, and the insulating part 72 corresponds to the focusing ring 2. By making the feeding component 5 pass through the conductive part 71, and making the electrical connection component 6 pass through the conductive part 71 and the insulating part 72, and insulated from the conductive part 71, the feeding component 5 and the electrical connection component 6 can be insulated. The conductive part 71 may be provided with a through hole through which the power supply connection component 6 passes, and by making the radial dimension of the through hole larger than the radial dimension of the electrical connection component 6, the electrical connection component 6 can be prevented from contacting with the conductive part 71, so that the electrical connection component 6 and the conductive part 71 can be insulated.

[0053] Optionally, the material of the conductive portion 71 may include metal.

[0054] Optionally, the material of the insulating portion 72 may include ceramics.

[0055] like Figure 3 and Figure 4 As shown, in one embodiment of the present invention, the electrical connection component 6 may include an electrical plug-in component 61, a conductive component 62 and an electrical connection component 63. The electrical plug-in component 61 is used to connect the negative pole of the control power supply 4. The electrical connection component 63 is electrically connected to the focusing ring 2 and is electrically connected to the electrical plug-in component 61 through the conductive component 62.

[0056] Specifically, the electrical plug-in component 61 can pass through the conductive part 71 and extend into the insulating part 72, the electrical connection component 63 can be electrically connected to the focusing ring 2, and electrically connected to the electrical plug-in component 61 through the conductive part 62. In actual applications, the negative pole of the control power supply 4 can be plugged into the electrical plug-in component 61, and the control voltage of the control power supply 4 can be loaded to the focusing ring 2 through the electrical plug-in component 61, the conductive part 62 and the electrical connection component 63 in sequence.

[0057] Optionally, the conductive component 62 may include a wire.

[0058] like Figure 4 As shown, in one embodiment of the present invention, the number of electrical connection components 63 can be multiple, the number of conductive components 62 can be multiple, the multiple electrical connection components 63 are arranged at intervals along the circumference of the focusing ring 2, and the multiple electrical connection components 63 are electrically connected to the electrical plug-in component 61 through the multiple conductive components 62 one by one.

[0059] For example, Figure 4As shown, the number of electrical plug-in components 61 is one, the number of electrical connection components 63 is six, and the number of conductive components 62 is six. The six electrical connection components 63 are electrically connected to one electrical plug-in component 61 through six conductive components 62 in a one-to-one correspondence, so that the control voltage of the control power supply 4 can be loaded to the focusing ring 2 through multiple electrical connection components 63, thereby improving the uniformity of the control voltage loaded to the focusing ring 2.

[0060] Optionally, a plurality of electrical connection components 63 may be evenly spaced along the circumference of the focus ring 2. This can further improve the uniformity of the control voltage applied to the focus ring 2.

[0061] like Figure 2 , Figure 3 and Figure 5 As shown, in one embodiment of the present invention, the lower electrode device may also include a pressure ring 8, which is arranged around the supporting component 1 and is located between the focusing ring 2 and the lower electrode component 7, and a portion of the pressure ring 8 is pressed on a portion of the edge of the supporting component 1, and the electrical connection component 6 is arranged through the pressure ring 8.

[0062] Specifically, the bearing component 1 may include a bearing base and a bearing protrusion disposed on the bearing base, the radial dimension of the bearing protrusion may be smaller than the radial dimension of the bearing base, that is, the edge of the bearing base may protrude relative to the edge of the bearing protrusion, the bearing protrusion may be used to bear the wafer 200, the pressure ring 8 may be located between the focus ring 2 and the lower electrode component 7, and disposed on the insulating portion 72, and a portion of the pressure ring 8 may be pressed on the edge portion of the bearing base protruding relative to the edge of the bearing protrusion, thereby achieving that a portion of the pressure ring 8 is pressed on a portion of the edge of the bearing component 1, and the bearing component 1 may be pressed on the lower electrode component 7 by means of the pressure ring 8. By disposing the pressure ring 8 on the insulating portion 72, the electrical connection component 6 disposed through the pressure ring 8 can be insulated from the lower electrode component 7 and the feeding component 5, specifically, the electrical connection component 63 can pass through the pressure ring 8 from the insulating portion 72 to be electrically connected to the insulating ring.

[0063] like Figure 2 and Figure 5 As shown, in one embodiment of the present invention, the lower electrode device may also include a first filter component 91 and / or a second filter component 92, the positive pole of the control power supply 4 is electrically connected to the RF source 3 through the first filter component 91, and the negative pole of the control power supply 4 is electrically connected to the focusing ring 2 through the second filter component 92.

[0064] That is to say, the first filter component 91 can be set on the path where the positive pole of the control power supply 4 is electrically connected to the RF source 3, and the second filter component 92 can be set on the path where the negative pole of the control power supply 4 is electrically connected to the focusing ring 2. With the help of the first filter component 91 and the second filter component 92, the radio frequency can be filtered out, so that the self-bias voltage generated by the radio frequency on the carrying component 1 is loaded onto the positive pole of the control power supply 4, and the self-bias voltage generated by the radio frequency on the carrying component 1 is loaded onto the focusing ring 2.

[0065] like Figure 6 As shown, an embodiment of the present invention further provides a semiconductor process control method. Using the lower electrode device provided by the embodiment of the present invention, the semiconductor process control method may include:

[0066] S1, controlling the radio frequency source 3 to load radio frequency to the bearing component 1;

[0067] S2 , setting the output voltage of the control power supply 4 to a compensation voltage corresponding to the thickness of the focus ring 2 .

[0068] The semiconductor process control method provided by the embodiment of the present invention, with the help of the lower electrode device provided by the embodiment of the present invention, when the control voltage is loaded to the focusing ring 2 by the control power supply 4, it is only necessary to control the RF source 3 to load the RF to the bearing component 1, and set the output voltage of the control power supply 4 to the compensation voltage corresponding to the thickness of the focusing ring 2, so that the voltage loaded by the control power supply 4 to the focusing ring 2 can be a control voltage including the self-bias voltage and the compensation voltage, without the need to detect and set the self-bias voltage of the bearing component 1, thereby avoiding the problems caused by the detection error of the self-bias voltage or the fluctuation of the self-bias voltage itself, thereby improving the accuracy of the control voltage, making the measurement of the control voltage simple, and improving the real-time performance of the control voltage.

[0069] Specifically, during a plasma process, when a control voltage is loaded onto the focusing ring 2 by controlling the power supply 4, a compensation voltage corresponding to the thickness of the focusing ring 2 can be selected first according to the thickness of the focusing ring 2. After that, the RF source 3 can be controlled to load RF onto the supporting component 1 so that the supporting component 1 generates a self-bias voltage. After that, the output voltage of the control power supply 4 can be set as the compensation voltage to load a control voltage including a self-bias voltage and a compensation voltage onto the focusing ring 2 through the negative electrode of the control power supply 4. After that, a plasma process can be performed. After the plasma process is completed, the RF source 3 can be turned off. After that, if the plasma process needs to be continued, the RF source 3 can be controlled to load RF onto the supporting component 1 to start.

[0070] like Figure 2 and Figure 5As shown, an embodiment of the present invention further provides a semiconductor process equipment 100, including a process chamber 101, a radio frequency source 3 and a lower electrode device as provided in an embodiment of the present invention, the lower electrode device is arranged in conjunction with the process chamber 101, and the radio frequency source 3 is electrically connected to the supporting component 1.

[0071] The semiconductor process equipment 100 provided by the embodiment of the present invention can improve the accuracy of the control voltage, simplify the measurement of the control voltage, and improve the real-time performance of the control voltage by means of the lower electrode device provided by the embodiment of the present invention.

[0072] Optionally, the RF source 3 , the control power supply 4 , the first filter component 91 and the second filter component 92 may all be arranged outside the process chamber 101 , and the lower electrode component 7 , the supporting component 1 , the pressure ring 8 and the focusing ring 2 may all be arranged inside the process chamber 101 .

[0073] In summary, the lower electrode device, semiconductor process control method and semiconductor process equipment 100 provided by the embodiments of the present invention can improve the accuracy of the control voltage, simplify the measurement of the control voltage, and improve the real-time performance of the control voltage.

[0074] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A lower electrode device, characterized in that: It includes a carrying component, a focusing ring and a control power supply. The carrying component is used to carry a wafer and is electrically connected to a radio frequency source. The radio frequency source is used to load radio frequency to the carrying component so that the carrying component generates a self-bias voltage. The focusing ring is arranged around the carrying component and can surround the wafer carried on the carrying component. The positive electrode of the control power supply is electrically connected to the radio frequency source, and the negative electrode of the control power supply is electrically connected to the focusing ring. The control power supply is used to load a control voltage to the focusing ring. The control voltage includes the self-bias voltage and a compensation voltage corresponding to the thickness of the focusing ring.

2. The lower electrode device according to claim 1, characterized in that: The lower electrode device also includes a feeding component, which is electrically connected to the bottom of the supporting component. The RF source is electrically connected to the feeding component so as to load RF to the supporting component through the feeding component. The positive pole of the control power supply is electrically connected to the feeding component so as to be electrically connected to the RF source through the feeding component.

3. The lower electrode device according to claim 2, characterized in that: The lower electrode device also includes an electrical connection component, which is electrically connected to the focus ring and the negative electrode of the control power supply respectively, and the control power supply applies a control voltage to the focus ring through the electrical connection component.

4. The lower electrode device according to claim 3, characterized in that: The lower electrode device also includes a lower electrode component, which is arranged at the bottom of the bearing component. The feeding component and the electrical connection component are respectively arranged to penetrate the lower electrode component, and the feeding component and the electrical connection component are insulated from each other.

5. The lower electrode device according to claim 4, characterized in that: The lower electrode component includes a conductive part and an insulating part, the insulating part is ring-shaped and surrounds at least part of the conductive part, and is located below the focusing ring corresponding to the focusing ring, the feeding component is arranged through the conductive part, the electrical connection component is arranged through the conductive part and the insulating part, and is insulated from the conductive part.

6. The lower electrode device according to claim 3, characterized in that: The electrical connection assembly includes an electrical plug-in component, a conductive component and an electrical connection component. The electrical plug-in component is used for plugging the negative pole of the control power supply. The electrical connection component is electrically connected to the focusing ring and is electrically connected to the electrical plug-in component through the conductive component.

7. The lower electrode device according to claim 6, characterized in that: There are multiple electrical connection components, and there are multiple conductive components. The multiple electrical connection components are spaced apart along the circumference of the focusing ring, and the multiple electrical connection components are electrically connected to the electrical plug-in component through the multiple conductive components in a one-to-one correspondence.

8. The lower electrode device according to claim 4, characterized in that: The lower electrode device also includes a pressure ring, which is arranged around the bearing component and is located between the focusing ring and the lower electrode component. Part of the pressure ring is pressed on a partial edge of the bearing component, and the electrical connection component is arranged through the pressure ring.

9. The lower electrode device according to claim 1, characterized in that: The lower electrode device also includes a first filter component and / or a second filter component. The positive electrode of the control power supply is electrically connected to the RF source through the first filter component, and the negative electrode of the control power supply is electrically connected to the focusing ring through the second filter component.

10. The lower electrode device according to claim 1, characterized in that: The control voltage is equal to the sum of the self-bias voltage and the compensation voltage.

11. A semiconductor process control method, characterized in that: Using the lower electrode device according to any one of claims 1 to 10, the semiconductor process control method comprises: Controlling the radio frequency source to load radio frequency onto the bearing component; The output voltage of the control power supply is set to the compensation voltage corresponding to the thickness of the focus ring.

12. A semiconductor process equipment, characterized in that: It comprises a process chamber, a radio frequency source and a lower electrode device as described in any one of claims 1 to 10, wherein the lower electrode device is arranged in cooperation with the process chamber, and the radio frequency source is electrically connected to the supporting component.

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