Organic electrical element including metal patterned layer and electronic device thereof

Abstract

The present invention provides an organic electric element and an electronic device thereof, the organic electric element including a metal patterned layer formed on an outer side of a metal electrode, making it easy to measure a thickness of the metal patterned layer by forming a patterned auxiliary photosensitive layer with a material having excellent photosensitivity on a lower portion of the metal patterned layer.

Description

Technical Field

[0001] The present invention relates to an organic electrical element including a metal patterned layer and an electronic device thereof, and more particularly, to an organic electrical element and an electronic device thereof, wherein a patterned auxiliary photosensitive layer is formed at the bottom of the metal patterned layer, so that the thickness of the metal patterned layer can be easily measured. Background Art

[0002] With the continuous development of display technology, users have higher and higher requirements for display devices, and terminal display devices are being developed in the direction of flexibility, full screen, high integration, etc.

[0003] In the case of smartphone displays, in order to increase the size of the screen, the bezel size is reduced or the bezel-less screen fingerprint is being developed. In this process, the physical button on the front of the smartphone is hidden in the screen or technologies such as UDC (Under Display Camera) or UPS (Under Panel Sensor) are developed.

[0004] UDC can only start the camera normally when the display has high light transmittance. Therefore, in the case of a smartphone or electronic device that uses a device like UDC, it is necessary to ensure high light transmittance, and Korean Authorization No. 10-2324529 applied by the present applicant discloses that such a purpose can be achieved by forming a metal patterned layer.

[0005] Also, Korean Patent Publication No. 10-2022-0006001 discloses a metal patterning method in which an organic patterning layer is formed by a vacuum deposition method and an organic thin film that selectively bounces off a metal substance is used.

[0006] In order to ensure light transmittance, it is particularly important to form such a metal patterned layer or organic patterned layer (hereinafter referred to as a metal patterned layer) with an appropriate thickness. If the thickness of the metal patterned layer is thick, the transmittance may be reduced due to the aggregation phenomenon, and it is difficult to perform additional thin film deposition on the thin film with aggregation due to the uneven surface.

[0007] Therefore, in order to realize a high-transmittance, high-quality transparent display, it is important to adjust the thickness of the metal patterned layer, and in order to adjust the thickness of the metal patterned layer, it is necessary to be able to easily and accurately measure the thickness of the metal patterned layer.

[0008] As a method for confirming the thickness of a thin film in a display manufacturing process, a method using photoluminescence (hereinafter also referred to as PL) characteristics among the optical characteristics of a compound forming the thin film is generally used.

[0009] However, in the case of a substance formed on a metal patterned layer, it is difficult to use an optical method, such as an ellipsometer, to measure the thickness of the metal patterned layer because the photoluminescence property in the visible light region is low. Therefore, in order to measure the thickness of the metal patterned layer, a scanning electron microscope (SEM) should be used, but in the display manufacturing process, it is actually very difficult to confirm the film thickness every time using a scanning electron microscope.

[0010] Therefore, there is a need for technical development of an organic electrical element including a metal patterned layer so that the thickness of the metal patterned layer can be easily measured using existing optical methods and a certain degree of accuracy can be guaranteed.

[0011] [Prior art literature]

[0012] 1. Korean authorized patent No. 10-2324529

[0013] 2. Korean Publication Patent No. 10-2022-0006001 Summary of the invention

[0014] Technical issues

[0015] Therefore, the object of the present invention is to provide an organic electrical element and an electronic device thereof, which can easily measure the thickness of the metal patterned layer by utilizing the photoluminescence properties, and can also meet the properties required in displays, especially transparent displays, by introducing a patterned auxiliary photosensitive layer formed by a material with excellent photoluminescence properties between the metal patterned layer and the organic layer.

[0016] Technical Solution

[0017] On the one hand, the present invention provides an organic electrical element, which includes a metal patterned layer formed on the outside of a metal electrode; and a patterned auxiliary photosensitive layer formed at the bottom of the metal patterned layer, wherein the patterned auxiliary photosensitive layer is formed of a photosensitive organic substance with a stronger photoluminescence intensity than that of the metal patterned layer.

[0018] In another aspect, the present invention provides an electronic device including a display device including the organic electric element and a control unit for driving the display device.

[0019] Effects of the Invention

[0020] According to the present invention, an organic electrical element and an electronic device thereof can be provided. By introducing a patterned auxiliary photosensitive layer formed by a material with excellent photoluminescent properties between the metal patterned layer and the organic layer, the thickness of the metal patterned layer can be easily and accurately measured to a certain extent, and the characteristics required in displays, especially transparent displays, can be met. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 FIG. 4 is an illustrative diagram of a stacked structure of an organic electrical device according to an embodiment of the present invention.

[0022] Figure 2 For along Figure 1 A cross-sectional view taken along the line A-A'.

[0023] Figure 3 FIG. 4 is an illustrative diagram of a stacked structure of an organic electrical element according to another embodiment of the present invention.

[0024] Figure 4 FIG. 4 is an illustrative diagram of a stacked structure of an organic electrical element according to yet another embodiment of the present invention.

[0025] Figure 5 FIG. 1 is a diagram for explaining a method for manufacturing an organic electrical device according to an embodiment of the present invention.

[0026] Figures 6 to 10 Graphs showing the intensity of photoluminescence measured according to wavelength for samples prepared according to Examples 1 to 5, respectively.

[0027] Figures 11 to 14 The surfaces of the samples according to Comparative Examples 1 to 4 were respectively photographed using an electron microscope.

[0028] Fig.15 This is the SEM cross-sectional image of the sample of Example 5.

[0029] Fig.16 This is a light transmittance measurement chart for the sample of Example 6.

[0030] Fig.17 This is a light transmittance measurement chart for the sample of Comparative Example 5.

[0031] Fig.18 This is a light transmittance measurement chart for the sample of Comparative Example 6.

[0032] Description of Reference Numerals

[0033] 100, 200, 300: organic electrical element 110: first electrode

[0034] 120: hole injection layer 130: hole transport layer

[0035] 140: Light-emitting layer 150: Electron transport layer

[0036] 180: Light efficiency improvement layer 210: Part 1

[0037] 212: metal patterned layer 214: patterned auxiliary photosensitive layer

[0038] 220: Second part 222: Second electrode

[0039] 224: electron injection layer 320: first hole injection layer

[0040] 330: first hole transport layer 340: first light emitting layer

[0041] 350: first electron transport layer 360: first charge generation layer

[0042] 361: second charge generation layer 420: second hole injection layer

[0043] 430: second hole transport layer 440: second light emitting layer

[0044] 450: Second electron transport layer CGL: Charge generation layer

[0045] ST1: First stack ST2: Second stack DETAILED DESCRIPTION

[0046] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0047] In the process of adding reference numerals to the structural elements of each drawing, it is noted that the same structural elements are given the same reference numerals as much as possible even if they are shown in different drawings. In addition, in the process of describing the present invention, if it is judged that the detailed description of the relevant known structure or function will obscure the gist of the present invention, the detailed description will be omitted.

[0048] In the process of describing the structural elements of the present invention, the terms such as first, second, A, B, (a), (b) etc. may be used. Such terms are only used to distinguish from other structural elements, and the nature, order or sequence of the related structural elements will not be limited by such terms. When a structural element is "connected", "bonded" or "coupled" to another structural element, the structural element can be directly connected or coupled to the other structural element, but it can also be understood that there are other structural elements "connected", "bonded" or "coupled" between the structural elements.

[0049] Furthermore, when a structural element such as a layer, film, region, or plate is located "on" or "above" another structural element, this should be understood not only as being "directly above" the other structural element, but also as being other structural elements in between. Conversely, when a structural element is located "directly above" another part, it should be understood as being without other parts in between.

[0050] Furthermore, when structural elements such as layers, films, regions and plates are located "on" or "upper" other structural elements, it should be understood that this can include situations where they are formed not only on the upper part or the entire upper surface of another structure, but also on at least a portion thereof.

[0051] Below, refer to Figure 1 and Figure 2 , an organic electrical element according to an embodiment of the present invention is described in detail.

[0052] Figure 1 and Figure 2 FIG. 2 is a diagram schematically showing a configuration of an organic electric device according to an embodiment of the present invention. Figure 2 For along Figure 1 A cross-sectional view taken along the line A-A'. Figure 3 This is a diagram schematically showing the structure of an organic electric device according to another embodiment of the present invention.

[0053] Reference Figures 1 to 3 According to an embodiment of the present invention, an organic electrical element includes a first electrode 110, an organic layer on the first electrode, and a first portion 210 and a second portion 220 on the organic layer in sequence on a substrate (not shown).

[0054] The first electrode 110 may be a negative electrode (anode), a reflective electrode, a semi-transmissive electrode or a transmissive electrode. As a typical material for forming a transmissive cathode, a transparent conductive oxide (TCO) may be selected, for example, indium tin oxide (ITO), zinc oxide (ZnO), tin oxide (SnO2) or indium zinc oxide (IZO) and a combination thereof, but is not limited thereto.

[0055] Materials for forming the semi-transmissive electrode or the reflective electrode may be selected from, for example, magnesium (Mg), silver (Ag), aluminum (Al), lithium (Li), calcium (Ca), indium (In), and combinations thereof, but are not limited thereto.

[0056] Furthermore, the first electrode 110 may also be used as a multi-layer cathode including two or more layers of TCO and / or metal films.

[0057] The organic layer may be formed of a plurality of layers including organic compounds, and may also include inorganic compounds.

[0058] The organic layer includes a hole transport region, a light emitting layer 140 and an electron transport region, the hole transport region may include a hole injection layer 120 and a hole transport layer 130, and the electron transport region may include an electron transport layer 150. The hole transport region may include a light emitting auxiliary layer, an electron blocking layer, etc., and the electron transport region may further include an electron transport auxiliary layer, a hole blocking layer, a buffer layer, etc.

[0059] The hole injection layer 120, the hole transport layer 130, the electron blocking layer and the light-emitting auxiliary layer can be formed of any substance commonly used as a hole injection / transport substance, such as an aromatic or heteroaromatic amine compound and a carbazole derivative. Specifically, they can be formed of NATA, 2T-NATA, NPNPB, and F4-TCNQ, PPDN, TPD (N,N'-bis-(3-methylphenyl)-N,N'-bis-(phenyl)-benzidine), PPD, TTBND, FFD, p-dmDPS, TAPC, TCTA, PTDATA, TDAPB, TDBA, 4-a, Spiro-TPD, Spiro-mTTB, Spiro-2, NPD (N,N-dinaphthyl-N,N'-diphenylbenzidine), The present invention can be formed by a substance selected from the group consisting of, but not limited to, benzidine), s-TAD, and MTDATA (4,4',4"-tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine).

[0060] The light-emitting layer 140 may include a host and a dopant. The host may be selected from any substance commonly used as a host, for example, it may be selected from aromatic or heteroaromatic amine compounds, azine compounds and condensed polycyclic aromatic compounds, but is not limited to these. The dopant may include any substance commonly used as a dopant, for example, it may include a fluorescent compound or a phosphorescent compound, for example, it may be selected from condensed polycyclic aromatic compounds, metal complexes of iridium (Ir), osmium (Os), platinum (Pt), etc., but is not limited to these.

[0061] The electron transport layer 150, the buffer layer, the electron transport auxiliary layer, etc. can be formed of any substance commonly used as an electron injection / transport substance. For example, in the case of the electron transport layer and the buffer layer, they can be formed of heteroaromatic compounds such as azine derivatives, carbazole derivatives, phenanthroline derivatives, imidazole derivatives, benzimidazole derivatives and benzoxazole derivatives, or a substance selected from metal complexes such as aluminum (Al) complexes and zinc (Zn) complexes, but are not limited to these.

[0062] A first portion 210 and a second portion 220 are formed on the organic layer, and the second portion 220 is formed on at least a portion of the upper portion of the organic layer where the first portion 210 is not formed. Figure 1 and Figure 2 The surface of the first portion and the surface of the second portion are shown to have the same height, but their heights may be the same or different. Figure 1 and Figure 2 These are diagrams schematically shown for explaining the stacked structure of the organic electric element, and therefore the height, area, position at which the first portion and the second portion are formed, etc. are not limited to these diagrams.

[0063] The first portion 210 as a non-light-emitting region includes a metal patterned layer 212 and a patterned auxiliary photosensitive layer 214, and the second portion 220 as a light-emitting region includes a second electrode as a metal electrode. Therefore, the first portion 210 may be a light-transmitting portion, and the second portion 220 may be a non-light-transmitting portion.

[0064] Since the second portion 220 including the second electrode is formed of a metal material, it is not possible to ensure the electroluminescence region or the light transmittance required in transparent displays or UDC / UPS, etc. In organic electrical elements suitable for these electronic devices, since the outer side of the second electrode on the upper part of the organic layer is not formed of a metal material, electroluminescence does not occur, but it is necessary to form a region that can have a high light transmittance. That is, in order to suppress the formation of the metal material, it is necessary to form a metal patterned layer.

[0065] The metal patterned layer 212 is disposed outside the metal electrode serving as the second electrode, and the patterned auxiliary photosensitive layer 214 is formed below the metal patterned layer 212. Preferably, the patterned auxiliary photosensitive layer 214 is also disposed outside the metal electrode.

[0066] The metal patterned layer 212 may be formed of an organic substance, which suppresses the formation of metal or the second electrode on the metal patterned layer, so that a very small amount or no metal or the second electrode is formed. For example, the metal patterned layer 212 may be formed of PBD (2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole), PBD2 (2-([1,1'-biphenyl]-4-yl)-5-phenyl-1,3,4-oxadiazole), mCP (1,3-bis(N-carbazolyl)benzene), TA Z (3-(4-Biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole), β-NPB (N,N'-Bis(naphthalen-2-yl)-N,N'-bis(phenyl)-benzidine), NTAZ (4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole), -1-yl)-3,5-diphenyl-4H-1,2,4-triazole), tBUP-TAZ (3,5-bis(4-(tert-butyl)phenyl)-4-phenyl-4H-1,2,4-triazole), BND (2,5-(binaphth-1-yl)-1,3,4-oxadiazole), TBADN (2-tert-butyl-9,10-di(naphthalen-2-yl)-1,3,4-oxadiazole), ) anthracene (2-tert-Butyl-9,10-di(naphth-2-yl) anthracene), CBP (4,4'-bis(carbazol-9-yl)biphenyl), BAlq (bis(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminium), m-BPC (9-([1,1'-biphenyl]-3-yl)-9H-carbazole (9-([1,The organic material may include inorganic materials such as metals. Preferably, the metal patterned layer 212 may be formed by a compound containing fluorine in the molecule. ,

[0067] At present, the materials suitable for the metal patterned layer 212 have no photoluminescence property or very weak photoluminescence property, so it is difficult to measure its thickness using the photoluminescence property. When the thickness of the metal patterned layer 212 is very thick, it is difficult to form a thin film with a uniform surface due to the aggregation phenomenon, so it is difficult to ensure uniform light transmittance, and it will cause problems when additionally forming a thin film such as a light efficiency improvement layer.

[0068] Therefore, in order to easily measure the thickness of the metal patterned layer 212 by utilizing optical characteristics, the present invention generally forms a patterned auxiliary photosensitive layer 214 having excellent photoluminescence characteristics under the metal patterned layer 212 . Figure 1 and Figure 2 The metal patterned layer 212 and the patterned auxiliary photosensitive layer 214 are roughly shown. Their formation positions, shapes, etc. will vary depending on the organic electrical components to which they are applied. Their respective thicknesses will also vary. The appearance, thickness, formation position, etc. of the metal patterned layer 212 and the patterned auxiliary photosensitive layer 214 are not limited by these figures.

[0069] The patterned auxiliary photosensitive layer 214 has a stronger photoluminescence intensity than the metal patterned layer 212, and is formed of a photosensitive organic material that exhibits optical properties sufficient to be measured by an optical method. Therefore, the material forming the patterned auxiliary photosensitive layer 214 is a material that has a stronger photoluminescence intensity than the metal patterned layer 212 in the visible light region, and can be a photosensitive organic material that exhibits photoluminescence properties sufficient to measure the thickness of the film using an ellipsometer.

[0070] Preferably, the patterning auxiliary photosensitive layer 214 may include a compound including at least one heterocyclic ring.

[0071] The heterocyclic ring may preferably be a C2-C4 ring containing at least one heteroatom selected from O, N, S, Si and P. 60 The heterocyclic ring is more preferably C2~C 30 The heterocyclic ring may be C2 to C 24The heterocycle may specifically be oxazole, thiazole, benzoxazole, benzothiazole, pyridine, pyrimidine, pyrazine, triazine, quinoline, quinazoline, quinoxaline, imidazole, triazole, benzimidazole, benzotriazole, furan, thiophene, benzofuran, benzothiophene, indole, dibenzofuran, dibenzothiophene, carbazole, benzofuranopyridine, benzothienopyridine, carboline, benzofuranopyrimidine, benzothienopyrimidine, benzofuranopyrazine and benzothienopyrazine, but is not limited thereto.

[0072] Preferably, the thickness of the patterned auxiliary photosensitive layer 214 is greater than 5 nm.

[0073] Moreover, preferably, the patterned auxiliary photosensitive layer 214 is formed by vacuum deposition. Therefore, in order to form the patterned auxiliary photosensitive layer 214, the molecular weight of the compound is 1500 g / mol or less, preferably 1300 g / mol or less, more preferably 1100 g / mol or less, and most preferably 1000 g / mol or less. This is because when the molecular weight of the compound forming the patterned auxiliary photosensitive layer 214 exceeds 1500 g / mol, it is difficult to form a thin film by vacuum deposition.

[0074] The first portion 210 including the metal patterned layer 212 and the patterned auxiliary photosensitive layer 214 serves as a non-luminescent region, and has a transmittance in the visible light region of more than 50%, preferably more than 70%, and more preferably more than 90%.

[0075] The second portion 220 formed on the organic layer is a light-emitting region formed of metal, including a second electrode as a metal electrode (positive electrode). In addition, the second portion 220 may also include an electron injection layer. The electron injection layer may be formed or excluded as required, and may be formed on the electron transport layer as required. Figure 1 and Figure 2 The figure shows a situation where the electron injection layer made of a metal material is not formed and the metal electrode corresponds to the second portion 220 .

[0076] The second electrode 222 can be formed of a highly conductive material, for example, it can be formed of a material selected from silver (Ag), magnesium (Mg), aluminum (Al), ytterbium (Yb), copper (Cu), zinc (Zn), cadmium (Cd), gold (Au), nickel (Ni), cobalt (Co), iron (Fe), molybdenum (Mo), niobium (Nb), palladium (Pd), platinum (Pt), lithium (Li), sodium (Na), calcium (Ca) and a combination thereof, but is not limited thereto.

[0077] According to another embodiment of the present invention, the organic electric element may further include at least one of an electron injection layer and a light efficiency improvement layer.

[0078] Figure 3FIG. 1 is a schematic diagram showing a stacked structure of an organic electrical element according to another embodiment of the present invention.

[0079] Reference Figure 3 The second portion 220 further includes an electron injection layer 224, and the light efficiency improvement layer 180 is formed on the first portion 210 and the second portion 220. Figure 2 The electron injection layer 224 and the light efficiency improvement layer 180 may be formed or excluded as required.

[0080] The electron injection layer 224 formed on the electron transport layer 150 is formed of metal. Therefore, after the metal patterned layer 212 is formed, when the electron injection layer 224 is deposited, the metal is hardly deposited on the metal patterned layer 212, so the electron injection layer 224 is formed on at least a portion of the organic layer where the metal patterned layer 212 is not formed.

[0081] The electron injection layer 224 can be formed of a highly conductive material, for example, it can be formed of a material selected from silver (Ag), magnesium (Mg), aluminum (Al), ytterbium (Yb), copper (Cu), zinc (Zn), cadmium (Cd), gold (Au), nickel (Ni), cobalt (Co), iron (Fe), molybdenum (Mo), niobium (Nb), palladium (Pd), platinum (Pt), lithium (Li), sodium (Na), calcium (Ca) and a combination thereof, but is not limited to these.

[0082] The light efficiency improvement layer 180 can be formed on one of the two surfaces of the first electrode 110 that does not contact the organic layer, that is, it can be formed on the surface between the substrate and the first electrode 110, or it can be formed on one of the two surfaces on the first part 210 and the second part 220 that does not contact the organic layer. More specifically, it can be formed on one of the two surfaces of the second electrode 222 and the metal patterned layer 212 that does not contact the organic layer. Figure 3 The case where the light efficiency improvement layer 180 is formed on the surface of the second electrode 222 that is not in contact with the organic layer is shown.

[0083] By forming a light efficiency improvement layer, in the case of an organic light-emitting element with top emission, the optical energy loss caused by SPPs (surface plasmon polaritons) in the second electrode can be reduced, and in the case of an organic light-emitting element with bottom emission, the light efficiency improvement layer can perform a buffering effect on the first part and the second part.

[0084] According to another embodiment of the present invention, the organic layer may also be in the form of a stack of a plurality of hole transport layers, a light emitting layer, and an electron transport layer. Figure 4 Provide explanation.

[0085] Figure 4 FIG. 4 is an illustrative diagram of a stacked structure of an organic electrical element according to yet another embodiment of the present invention.

[0086] Reference Figure 4 According to another embodiment of the present invention, the organic electrical element 300 may be formed with more than two groups of stacks ST1 and ST2 of organic layers formed in multiple layers between the first electrode 110 and the second electrode 170, and a charge generation layer CGL may be formed between the stacks of organic layers.

[0087] Specifically, the organic electrical device according to an embodiment of the present invention may include a first electrode 110 , a first stack ST1 , a charge generation layer CGL (Charge Generation Layer), a second stack ST2 , a second electrode 170 , and a light efficiency improvement layer 180 .

[0088] The first stack ST1 is an organic layer formed on the first electrode 110, which may include a first hole injection layer 320, a first hole transport layer 330, a first light-emitting layer 340 and a first electron transport layer 350. The second stack ST2 may include a second hole injection layer 420, a second hole transport layer 430, a second light-emitting layer 440 and a second electron transport layer 450. In this way, the first stack and the second stack may be organic layers having the same stacked structure or organic layers having different stacked structures.

[0089] A charge generation layer CGL may be formed between the first stack ST1 and the second stack ST2. The charge generation layer CGL may include a first charge generation layer 360 and a second charge generation layer 361. Such a charge generation layer CGL is formed between the first light emitting layer 340 and the second light emitting layer 440, and may increase the efficiency of current generated in each light emitting layer, thereby smoothly distributing charges.

[0090] The first light-emitting layer 340 may include a light-emitting material containing a blue fluorescent dopant in a blue main body, and the second light-emitting layer 440 may include a material in which a green main body is doped with a greenish yellow dopant and a red dopant, but the materials of the first light-emitting layer 340 and the second light-emitting layer 440 according to the embodiment of the present invention are not limited thereto.

[0091] exist Figure 4 In the embodiment, n may be an integer of 1 to 5. However, when n is 2, a charge generation layer CGL and a third stack may be further stacked on the second stack ST2.

[0092] In passing Figure 4When multiple light-emitting layers are formed by the multi-layer stacking structure shown, by virtue of the mixing effect of the light emitted by each light-emitting layer, not only an organic electrical light-emitting element emitting white light can be prepared, but also an organic electrical light-emitting element that can emit light of multiple colors can be prepared.

[0093] The charge generation layer may be formed of an n-doped layer and / or a p-doped layer for injecting electrons and holes. If the electrons and holes are supplied from the CGL and the electrode, for example, n and p conductive dopants may be selected, but not limited thereto.

[0094] Below, refer to Figure 5 , a method for preparing an organic electric element according to one aspect of the present invention is described. Figure 5 It is used to describe Figure 3 FIG. 1 is a diagram of a method for preparing an organic electrical element of a stacked structure.

[0095] Reference Figure 3 and Figure 5 , firstly, an organic layer is formed on the first electrode (S100).

[0096] The organic layer is formed by sequentially depositing a hole injection layer 120, a hole transport layer 130, a light emitting layer 140, an electron transport layer 150, etc. on the first electrode 110. As described above, at least one of these layers may be omitted, and a light emitting auxiliary layer, an electron transport auxiliary layer, etc. may be further formed.

[0097] Such an organic layer can be prepared by a variety of deposition methods. For example, the organic layer can be prepared by a deposition method such as PVD or CVD, and can be prepared into a smaller number of layers by a non-deposition solution process or solvent process, such as a spin coating process, a nozzle printing process, an inkjet printing process, a slit coating process, a dip coating process, a roll-to-roll process, a doctor blade process, a screen printing process, or a thermal transfer method.

[0098] Preferably, the organic layer can be formed by vacuum deposition. However, the organic layer according to the present invention can be formed by various methods, and thus the protection scope of the present invention is not limited by the formation method thereof.

[0099] Then, a patterned auxiliary photosensitive layer 214 is formed on the organic layer ( S110 ), and a substance that inhibits the deposition of metal substances is vacuum deposited on the patterned auxiliary photosensitive layer 214 to deposit a metal patterned layer 212 ( S120 ).

[0100] The patterned auxiliary photosensitive layer 214 and the metal patterned layer 212 are formed on a portion of the organic layer so that these layers can be vacuum deposited at a desired location using a mask in a deposition process.

[0101] After forming the first portion 210 including the patterned auxiliary photosensitive layer 214 and the metal patterned layer 212 , a metal substance is vacuum deposited to form an electron injection layer 224 ( S130 ), and a second electrode 222 is formed on the electron injection layer 224 ( S140 ).

[0102] The metal patterned layer 212 is formed of a substance that inhibits the deposition of metal substances, that is, a substance that bounces off metal substances, so that if the electron injection layer 224 and the second electrode 222 are deposited with metal substances, these metal substances will be bounced off on the metal patterned layer 212. Therefore, the electron injection layer 224 and the second electrode 222 as a metal electrode are formed on at least a portion of the portion where the first portion 210 is not formed on the organic layer, and these layers can be formed by vacuum deposition even without using a mask.

[0103] Finally, the light efficiency improvement layer 180 is formed on the first portion 210 and the second portion 220 ( S150 ).

[0104] The organic electrical device according to an embodiment of the present invention may be a front-side emission type, a back-side emission type, or a dual-side emission type, depending on the materials used.

[0105] Furthermore, the organic electrical element according to an embodiment of the present invention may be selected from the group consisting of an organic electrical light emitting element, an organic solar cell, an organic photoconductor, an organic transistor, an element for monochromatic lighting, and an element for quantum dot display.

[0106] According to another embodiment of the present invention, an electronic device may be included, the electronic device including a display device, the display device including the organic electrical element of the present invention described above; and a control unit, the control unit controlling the display device. In this case, the electronic device may be a current or future wired or wireless communication terminal, including all electronic devices such as mobile terminals such as mobile phones, navigation, game consoles, various televisions, various computers, etc. Preferably, the display device includes a transparent display, and the electronic device may include a UDC (Under Display Camera) or a UPS (Under Panel Sensor).

[0107] The following examples are used to illustrate the present invention, but the protection scope of the present invention is not limited by these examples.

[0108] <Thickness measurement of patterned auxiliary photosensitive layer and metal patterned layer>

[0109] [Comparative Example 1]

[0110] The samples were fabricated by depositing a 10 nm metal patterned layer on a glass substrate.

[0111] [Comparative Example 2]

[0112] The sample prepared in Comparative Example 1 was exposed to atmospheric pressure and 85° C. for 10 hours.

[0113] [Comparative Example 3]

[0114] The samples were fabricated by depositing a 50 nm metal patterned layer on a glass substrate.

[0115] [Comparative Example 4]

[0116] The sample prepared in Comparative Example 3 was exposed to atmospheric pressure and 85° C. for 10 hours.

[0117] [Example 1] to [Example 5]

[0118] After depositing a patterned auxiliary photosensitive layer on a glass substrate, a metal patterned layer was deposited to fabricate a sample.

[0119] The photoluminescence intensity of the samples prepared in Comparative Examples 1 to 4 and Examples 1 to 5 was measured using an RC2 XF ellipsometer manufactured by JA Woollam.

[0120] In the case of Comparative Examples 1 to 4, the thickness of the metal patterned layer was measured using SEM, and in the case of Examples 1 to 4, the thickness of the patterned auxiliary photosensitive layer and the metal patterned layer was measured using an RC2 XF Ellipsometer (Ellipsometer) of JA Woollam. The measurement results are shown in Table 1 below. The intensity of the photoluminescence according to the wavelength of each Example is shown in Table 1. Figures 6 to 10 As shown, based on Figures 6 to 10 The photoluminescence intensity is shown in Table 1.

[0121] [Table 1]

[0122]

[0123] As shown in Table 1, in the case of Comparative Examples 1 to 4 in which only a metal patterned layer was formed without forming a patterned auxiliary photosensitive layer, the photoluminescence intensity could not be measured. On the contrary, in Examples 1 to 5 in which a patterned auxiliary photosensitive layer was formed, the photoluminescence intensity could be measured.

[0124] Therefore, in the case of Comparative Examples 1 to 4, since the thickness of the metal patterned layer could not be measured using an ellipsometer, the thickness was measured using a SEM.

[0125] In the case of Examples 1 to 5, the intensity of the photoluminescence is as shown in Table 1, and therefore the thickness of the patterned auxiliary photosensitive layer and the metal patterned layer can be measured using the intensity of the photoluminescence.

[0126] In the case of Examples 1 to 4, it can be seen that although the thickness of the patterned auxiliary photosensitive layer is the same, the thickness of the metal patterned layer is different, and the intensity of photoluminescence is reduced. This is because the thicker the metal patterned layer, whose PL characteristics are very weak or the photoluminescence intensity is difficult to measure, the smaller the thickness of the patterned auxiliary photosensitive layer with excellent PL characteristics will be. Therefore, it can be seen that the intensity of photoluminescence may be different depending on the thickness of the patterned auxiliary photosensitive layer with excellent PL characteristics.

[0127] In addition, for the samples of Comparative Examples 1 to 4, the results of confirming the film at 100 times magnification using Nikon's Eclipse LV100ND are as follows: Figures 11 to 14 shown.

[0128] Reference Fig.11 and Fig.13 After preparing samples as in Comparative Examples 1 and 3, the results of the metal patterning layer were confirmed. No particular difference was shown between the two samples, but the reference Fig.12 and Fig.14 After preparing each sample as in Comparative Examples 2 and 4, the film was aged for 10 hours and measured. Fig.14 ) can be confirmed in Comparative Example 2 ( Fig.13 ) The metal patterning layer was formed relatively thick, resulting in aggregation of substances formed in the metal patterning layer, which was also confirmed in the optical microscope image.

[0129] The metal patterned layer is a layer suitable for realizing a transparent display, such as Fig.14 As shown, in the case where the aggregation phenomenon occurs, the transmittance may be reduced, so that the realization of a high-quality transparent display may be affected.

[0130] Furthermore, when aggregation occurs on a thin film, it is difficult to deposit an additional thin film on the thin film where aggregation occurs due to the uneven surface.

[0131] Therefore, it can be seen that in order to realize a transparent display with high transmittance, it is necessary to adjust the thickness of the metal patterned layer. In order to appropriately adjust the thickness of such a metal patterned layer, when a patterned auxiliary photosensitive layer formed of a photosensitive material is formed as in the present invention, the thickness of the metal patterned layer can be measured more easily.

[0132] <Confirmation of the accuracy of film thickness measured by ellipsometer>

[0133] In order to confirm whether the thickness of each thin film measured by an ellipsometer is accurate, an additional experiment was performed.

[0134] [Example 6] Thickness confirmation experiment of patterned auxiliary photosensitive layer and metal patterned layer by scanning electron microscope (SEM)

[0135] For the sample prepared in Example 5, the thickness of the patterning auxiliary photosensitive layer and the metal patterning layer was confirmed using JMS6701F of JEOL. The results are as follows: Fig.15 shown.

[0136] exist Fig.15 In the figure, (a) is a glass substrate, (b) is a patterned auxiliary photosensitive layer, and (c) is a metal patterned layer, and the thickness of the metal patterned layer is 90.9 nm. Therefore, it can be seen that by introducing a patterned auxiliary photosensitive layer, the thickness of a metal patterned layer with little photoluminescence characteristics can be measured with a high level of accuracy.

[0137] <Comparison experiment of light transmittance with and without patterned auxiliary photosensitive layer>

[0138] According to the present invention, a change in light transmittance is measured according to whether a patterned auxiliary photosensitive layer is introduced.

[0139] [Example 7]

[0140] After vacuum depositing a hole transport layer on a glass substrate to form a thickness of 100 nm, a patterned auxiliary photosensitive layer was vacuum deposited on the hole transport layer to form a thickness of 10 nm. Then, a metal patterned layer was vacuum deposited on the patterned auxiliary photosensitive layer to form an electron injection layer, and then Yb was vacuum deposited to form an electron injection layer, and then deposition was performed to make the weight ratio of Mg and Ag reach 1:9, thereby forming a cathode. Then, a light efficiency improvement layer with a thickness of 70 nm was formed on the cathode.

[0141] [Comparative Example 5]

[0142] A sample was prepared as described in Example 7 except that the patterned auxiliary photosensitive layer was not formed.

[0143] [Comparative Example 6]

[0144] A sample was produced as described in Example 7 except that the patterned auxiliary photosensitive layer was not formed and the thickness of the metal patterned layer was formed to be 50 nm.

[0145] The transmittance of the samples prepared according to Example 7, Comparative Example 2 and Comparative Example 3 was measured using a Lambda 365 UV / VIS spectrophotometer from PerkinElmer. The results of measuring the transmittance at 550 nm, which is the visible light region, are shown in Table 2 below. Figures 16 to 18 The transmittance chart of is used to obtain the transmittance in the following Table 2.

[0146] [Table 2]

[0147]

[0148] It can be confirmed from Table 2 that when the thickness of the metal patterned layer is 10 nm, even if the patterned auxiliary photosensitive layer is formed, the transmittance is 98.86%, which is very excellent. Therefore, even if the patterned auxiliary photosensitive layer is formed under the metal patterned layer according to the present invention, it does not cause any problem in realizing a transparent display.

[0149] In addition, it can be seen from Table 2 that when the thickness of the metal patterned layer is 50 nm, the light transmittance is low, which is caused by the aggregation phenomenon.

[0150] Therefore, it can be known that when preparing an organic electrical device, the thickness of the metal patterned layer needs to be adjusted. According to the present invention, the thickness of the metal patterned layer can be easily measured.

[0151] That is, according to the present invention, when a patterned auxiliary photosensitive layer having photoluminescent properties in the visible light region is used, in order to adjust the thickness of the metal patterned layer in the display manufacturing process, a scanning electron microscope (SEM) which is difficult to introduce in practice is not introduced. Instead, the photoluminescent properties of the patterned auxiliary photosensitive layer in the visible light region can be used to more easily adjust the thickness of the metal patterned layer, thereby realizing a transparent display with high light transmittance, and preventing in advance problems such as poor performance and additional formation of thin films due to deviations in the deposition thickness of the material of the metal patterned layer.

[0152] The above description is only for illustration, and any person skilled in the art to which the present invention belongs can make various modifications without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in this specification are not intended to limit the present invention, but to illustrate the present invention, and the idea and scope of the present invention will not be limited by such embodiments. The protection scope of the present invention should be interpreted according to the protection scope of the invention claims, and all technologies within the equivalent scope should be interpreted as included in the protection scope of the present invention.

Claims

1. An organic electrical element, comprising a metal patterned layer formed on the outside of a metal electrode; and a patterned auxiliary photosensitive layer formed under the metal patterned layer, wherein: The patterned auxiliary photosensitive layer is formed of a photosensitive organic substance having a stronger intensity of photoluminescence in a visible light region than that of the metal patterned layer.

2. The organic electric element according to claim 1, wherein The metal patterning layer includes an organic substance that inhibits deposition of metal substances.

3. The organic electric element according to claim 1, wherein The patterning auxiliary photosensitive layer includes a compound including at least one heterocyclic ring.

4. The organic electric element according to claim 3, wherein The heterocyclic ring is a C2-C4 ring including at least one heteroatom selected from O, N, S, Si and P. 60 of heterocyclic ring.

5. The organic electric element according to claim 3, wherein The compound forming the patterned auxiliary photosensitive layer has a molecular weight of 1,500 g / mol or less.

6. The organic electric element according to claim 1, wherein The patterned auxiliary photosensitive layer is formed to have a thickness of 5 nm or more.

7. The organic electric element according to claim 1, wherein The patterned auxiliary photosensitive layer is formed by vacuum deposition.

8. The organic electric element according to claim 1, wherein The metal patterned layer is formed of a compound containing fluorine (F).

9. The organic electric element according to claim 1, wherein The metal electrode is selected from the group consisting of Ag, Mg, Al, Yb, Cu, Zn, Cd, Au, Ni, Co, Fe, Mo, Nb, Pd, Pt, Li, Na, Ca and combinations thereof.

10. The organic electric element according to claim 1, wherein The organic electrical element includes an organic layer formed on an anode, and the patterned auxiliary photosensitive layer is formed on at least a portion of the organic layer.

11. The organic electric element according to claim 10, wherein The patterned auxiliary photosensitive layer is formed on the outer side of the metal electrode.

12. The organic electric element according to claim 1, wherein comprising a first portion and a second portion formed on an organic layer, The first portion includes the metal patterned layer and the patterned auxiliary photosensitive layer, and the second portion includes the metal electrode.

13. The organic electric element according to claim 12, wherein The second portion includes an electron injection layer formed at a lower portion of the metal electrode.

14. The organic electric element according to claim 12, wherein The first portion is a non-luminous area, and the second portion is a luminous area.

15. The organic electric element according to claim 12, wherein The first portion is a light-transmitting portion, and the second portion is a non-light-transmitting portion.

16. The organic electric element according to claim 13, wherein The electron injection layer is selected from the group consisting of Ag, Mg, Al, Yb, Cu, Zn, Cd, Au, Ni, Co, Fe, Mo, Nb, Pd, Pt, Li, Na, Ca and combinations thereof.

17. The organic electric element according to claim 10, wherein It also includes a light efficiency improvement layer, which is formed on one of the two sides of the metal electrode that is not in contact with the organic layer or on one of the two sides of the metal electrode and the metal patterned layer that is not in contact with the organic layer.

18. The organic electric element according to claim 10, wherein The organic layer includes a hole transport region, a light emitting layer and an electron transport region which are sequentially formed on the anode.

19. The organic electric element according to claim 18, wherein The organic layer includes two or more stacks, and the stack includes the hole transport region, the light emitting layer and the electron transport region.

20. The organic electric element according to claim 19, wherein The organic layer further includes a charge generation layer formed between the two or more stacks.

21. An electronic device, wherein: include: A display device comprising the organic electric element according to claim 1; as well as A control unit is used to drive the display device.

22. The electronic device according to claim 21, wherein: The organic electrical element is selected from the group consisting of an organic electrical light-emitting element, an organic transistor, an organic solar cell, an organic photoreceptor, an element for monochromatic lighting, and an element for quantum dot display.

23. The electronic device according to claim 21, wherein: The display device includes a transparent display.

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