Deposition chamber for EUV reflective film and film deposition equipment

Abstract

The invention discloses a deposition chamber for an EUV reflective film and film deposition equipment, relates to the field of semiconductor process equipment, and aims to solve the problem that coverage uniformity of a large-area sample wafer cannot be realized in film deposition work. According to the deposition chamber, a sample inlet is formed in a cavity body and used for placing a sample wafer to be processed into the cavity body; the sample table is arranged at the bottom in the cavity and is used for placing a sample wafer to be processed; the top cover is arranged at the top of the cavity; the infrared lamp set is arranged on the top cover and comprises a plurality of infrared lamps arranged in parallel, the projection area of the infrared lamp set on the sample table covers the bearing face of the sample table, and the infrared lamp set is used for heating the area where the bearing face of the sample table is located. A processing sample wafer is put into the cavity through the sample inlet, the top cover is closed, the cavity is vacuumized, the infrared lamp group is turned on to heat the sample wafer, the infrared lamp group is turned off after annealing treatment of a covering film on the surface of the sample wafer by a deposition source in the cavity is completed, and the process is repeated for many times, so that the covering uniformity of film deposition on the surface of the sample wafer is realized.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor process equipment, and in particular to a deposition chamber for EUV reflective film and a film deposition device. Background Art

[0002] Thin film deposition technology refers to an advanced semiconductor technology that deposits the required thin film material on a substrate by physical or chemical means. It can be divided into physical vapor deposition and chemical vapor deposition according to the technical principle. The present invention belongs to the category of chemical vapor deposition. The technologies closely related to the present invention are low-pressure chemical vapor deposition (LPCVD) technology and atomic layer deposition (ALD) technology. The two technologies are explained separately as follows: Low-pressure chemical vapor deposition (LPCVD) technology and atomic layer deposition (ALD) technology are both chemical vapor deposition technologies under specific equipment, and both need to be carried out in a vacuum chamber. The currently commonly used methods for EUV reflective films are LPCVD and ALD.

[0003] LPCVD selects the required reactants according to the material composition of the film to be prepared, and connects them to the air inlet of the chamber; the sample for growing the film is placed on the sample stage in the chamber, and the air pressure in the chamber is pumped to the vacuum condition required for the reaction using a mechanical pump and a molecular pump, and then the sample is heated to the required process temperature, and the reaction gas is introduced into the chamber, and the reactant molecules collide in the chamber to undergo a chemical reaction and are deposited on the surface of the sample. The LPCVD method can work normally at a high temperature of about 800°C, but due to the influence of the gas path in the tubular reactor structure of the chamber itself, the prepared film covers more near the center of the furnace and less at the edge of the furnace, and the uniformity and step coverage of the prepared film are poor.

[0004] ALD selects the required source according to the material composition of the film to be prepared, puts it into the source bottle and connects it to the source inlet of the chamber; puts the sample for growing the film on the sample stage in the chamber, uses a mechanical pump and a molecular pump to pump the air pressure in the chamber to the vacuum condition required for the reaction, heats the sample to the required process temperature, and performs source pulse, purge, source pulse, purge in sequence to deposit and form an atomic layer, repeats the cycle until the process requirements are met, and ends the reaction. ALD needs to limit a certain temperature during operation, and it is difficult to process at high temperatures of 450°C and above. When the temperature is high, it is easy to deform some structures in the working chamber, affecting the sealing performance of the vacuum chamber and reducing the uniformity of the prepared film. In addition, the working chamber of ALD is generally small, and thin films can be prepared for samples with a diameter of about 440mm. It is difficult to prepare large-area thin films in a high-temperature working environment.

[0005] In summary, both LPCVD and ALD cannot guarantee the uniformity of EUV reflective film covering a large area of ​​the processed sample in their working chamber under high-temperature working environment. Summary of the invention

[0006] The object of the present invention is to provide a deposition chamber and a thin film deposition device for EUV reflective film, which are used to improve the uniformity of the chamber covering a large area of ​​a sample to be processed with EUV reflective film at high temperature.

[0007] In order to achieve the above object, the present invention provides the following technical solutions:

[0008] In a first aspect, the present invention provides a deposition chamber for EUV reflective film, comprising:

[0009] The cavity is provided with an injection port, and the injection port is used to place the sample to be processed into the cavity;

[0010] A sample stage is arranged at the bottom of the cavity, and is used to place samples to be processed;

[0011] A top cover, arranged on the top of the cavity;

[0012] The infrared lamp group is arranged on the top cover. The infrared lamp group includes a plurality of infrared lamps arranged in parallel. The projection area of ​​the infrared lamp group on the sample stage covers the bearing surface of the sample stage. The infrared lamp group is used to heat the area where the bearing surface of the sample stage is located.

[0013] Optionally, in the above-mentioned deposition chamber for EUV reflective film, the distance between the supporting surface of the sample stage and the plane where the infrared lamp group is located is 1.2 to 1.8 times the distance between two adjacent infrared lamps; the distance between two adjacent infrared lamps is 5 cm to 15 cm.

[0014] Optionally, in the above-mentioned deposition chamber for EUV reflective film, the chamber is provided with one or more first through holes, and the first through holes are used to penetrate a temperature measuring component, and the temperature measuring component is used to measure the temperature of the surface of the sample to be processed.

[0015] Optionally, in the above deposition chamber for EUV reflective film, the chamber is provided with a second through hole and a third through hole, the second through hole is used to communicate with the mechanical pump, and the third through hole is used to communicate with the molecular pump.

[0016] Optionally, in the above-mentioned deposition chamber for EUV reflective film, the length of the infrared lamp is 50 cm to 90 cm; the sample stage is a circular platform surface, and the diameter of the circular platform surface is 67 cm to 75 cm.

[0017] Optionally, in the above-mentioned deposition chamber for EUV reflective film, the chamber is a cubic structure.

[0018] Optionally, in the above deposition chamber for EUV reflective film, the side wall of the chamber is provided with an air inlet group and an air outlet group, the air inlet group is used to communicate with the air intake and air homogenizing device, and the air outlet group is used to communicate with the exhaust and air homogenizing device.

[0019] Optionally, in the above-mentioned deposition chamber for EUV reflective film, the air inlet group and the air outlet group are respectively arranged on different side walls of the cavity, and the air inlet group is arranged at a distance of 18cm to 22cm from the bottom of the cavity; the air outlet group is arranged at a distance of 15cm to 18cm from the bottom of the cavity.

[0020] Optionally, the above deposition chamber for EUV reflective film further includes a support rod, the two ends of which are respectively arranged on the top cover and the cavity, the top cover is rotatably connected to the cavity, and the support rod is used to support the top cover to be flipped open relative to the cavity.

[0021] In the second aspect, the present invention also provides a thin film deposition device, including a mechanical pump, a molecular pump, an air intake and uniform gas device, an exhaust and uniform gas device and a chamber. The mechanical pump and the molecular pump are both connected to the cavity. The mechanical pump and the molecular pump are both used to evacuate the cavity to a vacuum environment. The air intake and uniform gas device and the exhaust and uniform gas device are both connected to the cavity. The air intake and uniform gas device are used to pass the deposition source into the cavity. The exhaust and uniform gas device is used to discharge the deposition source. The chamber is any one of the above-mentioned deposition chambers for EUV reflective film.

[0022] Compared with the prior art, when the above technical solution is adopted, the sample to be processed is placed into the cavity from the sample inlet and fixed on the sample table. Then the top cover on the top of the cavity is closed to form a closed space for the entire chamber. After the air pressure in the cavity is pumped to the vacuum condition required for the reaction, the deposition source connected to the cavity reacts in the cavity and covers the surface of the processed sample to form a layer of deposited film. At this time, the infrared lamp on the infrared lamp group is turned on to heat the area where the bearing surface of the sample table is located. After the annealing treatment of the deposited film on the surface of the sample to be processed on the sample table is completed, the infrared lamp on the infrared lamp group is turned off. This is repeated many times until the process requirements are met, and the thin film deposition on the surface of the sample to be processed is completed, thereby improving the uniformity of the cavity covering a large area of ​​the EUV reflective film on the sample to be processed. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0024] Figure 1 A three-dimensional diagram of a deposition chamber for EUV reflective film according to the present invention;

[0025] Figure 2 A front view of a deposition chamber for EUV reflective film according to the present invention;

[0026] Figure 3 A bottom view of a deposition chamber for EUV reflective film according to the present invention;

[0027] Figure 4 This is a schematic diagram of the bottom structure in a deposition chamber for EUV reflective film according to the present invention;

[0028] Figure 5 A top view of a deposition chamber for EUV reflective film according to the present invention;

[0029] Figure 6 It is a right side view of a deposition chamber for EUV reflective film of the present invention;

[0030] Figure 7 The figure is a schematic diagram of the structure inside a deposition chamber for EUV reflective film according to the present invention.

[0031] Reference numerals:

[0032] 1- cavity; 101- injection port; 102- first through hole; 103- second through hole; 104- third through hole; 105- air inlet group; 106- air outlet group; 107- support rod; 108- fourth through hole; 109- fifth through hole; 110- weight reduction hole; 2- sample table; 3- top cover; 4- infrared lamp group; 401- infrared lamp; 5- sample to be processed; 6- mechanical pump; 7- molecular pump; 8- air intake and uniform gas device. DETAILED DESCRIPTION

[0033] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0034] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0035] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined. The meaning of "several" is one or more, unless otherwise clearly and specifically defined.

[0036] In the description of the present invention, it is necessary to understand that the directions or positional relationships indicated by the terms "up", "down", "front", "back", "left", "right", etc. are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on the present invention.

[0037] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0038] like Figure 1-Figure 7 As shown, an embodiment of the present invention provides a deposition chamber for EUV reflective film, which includes: a chamber 1, a sample stage 2, a top cover 3 and an infrared lamp group 4.

[0039] Among them, the cavity 1 is provided with an injection port 101, which is used to place the sample 5 to be processed into the cavity 1; the sample table 2 is arranged at the bottom of the cavity 1, and the sample table 2 is used to place the sample 5 to be processed; the top cover 3 is arranged at the top of the cavity 1; the infrared lamp group 4 is arranged on the top cover 3, and the infrared lamp group 4 includes a plurality of infrared lamps 401 arranged in parallel. The projection area of ​​the infrared lamp group 4 on the sample table 2 covers the bearing surface of the sample table 2, and the infrared lamp group 4 is used to heat the area where the bearing surface of the sample table 2 is located.

[0040] When implementing it, Figure 1As shown, the sample 5 to be processed is placed into the chamber 1 through the sample inlet 101, and the sample 5 to be processed is fixedly placed on the sample stage 2, and then the top cover 3 on the top of the chamber 1 is closed to form a closed space in the entire chamber. After the air pressure in the chamber 1 is pumped to the vacuum condition required for the reaction, the deposition source connected to the chamber 1 reacts in the chamber 1, and covers the surface of the processed sample to form a layer of deposition film. At this time, the infrared lamp 401 on the infrared lamp group 4 is turned on, and only the area where the bearing surface of the sample stage 2 is located is heated to a high temperature. The heating effect on the area around the sample stage 2 in the chamber is not obvious, ensuring that the annealing treatment of the deposition film on the surface of the sample 5 to be processed on the sample stage 2 is carried out at a high temperature. After the annealing process is completed, the infrared lamp 401 on the infrared lamp group 4 is turned off to complete the processing of a layer of deposition film on the surface of the processed sample. After repeating this process multiple times until the process requirements are met, the film deposition on the surface of the sample 5 to be processed is completed, thereby improving the uniformity of the chamber covering a large area of ​​the EUV reflective film on the sample 5 to be processed.

[0041] Specifically, in this embodiment, the distance between the bearing surface of the sample stage 2 and the plane where the infrared lamp group 4 is located is 1.2 to 1.8 times the distance between two adjacent infrared lamps 401. When the sample 5 to be processed placed on the sample stage 2 is far away from the plane where the infrared lamp group 4 set at the top cover 3 is located, in order to ensure a certain heating temperature, it is necessary to reduce the distance between two adjacent infrared lamps 401, increase the density of the arrangement of the infrared lamps 401, and ensure the uniformity of heating coverage; when the sample 5 to be processed placed on the sample stage 2 is close to the plane where the infrared lamp group 4 set at the top cover 3 is located, in order to save the use cost, the distance between two adjacent infrared lamps 401 can be appropriately increased on the premise of ensuring the uniformity of heating coverage. Exemplarily, the distance between the supporting surface of the sample stage 2 and the plane where the infrared lamp group 4 is located can be 1.2 times, 1.3 times, 1.5 times, 1.7 times, 1.8 times, etc., of the distance between two adjacent infrared lamps 401. The length relationship between the distance between the supporting surface of the sample stage 2 and the plane where the infrared lamp group 4 is located and the distance between two adjacent infrared lamps 401 is not specifically limited. The length relationship between the two ensures the uniformity of the surface coverage of a large area of ​​the sample 5 to be processed by the deposition chamber for the EUV reflective film.

[0042] Further, in the present embodiment, the distance between two adjacent infrared lamps 401 is 5 cm to 15 cm. Exemplarily, the distance between two adjacent infrared lamps 401 can be 5 cm, 8 cm, 10 cm, 13 cm, 15 cm, etc. The distance between two adjacent infrared lamps 401 is not specifically limited here. The smaller the distance between two adjacent infrared lamps 401, the tighter the arrangement of the infrared lamp group 4, and the larger the range that the infrared lamp 401 can irradiate and cover, thereby improving the uniformity of the process treatment of the thin film deposited on the surface of the processed sample. When the sample 5 to be processed is far away from the infrared lamp 401, the distance between the two adjacent infrared lamps 401 is reduced; when the sample 5 to be processed is close to the infrared lamp 401, the distance between the two adjacent infrared lamps 401 can be appropriately increased. Among them, the number of infrared lamps 401 can be 1, 2, 5, 13, 16, etc., and there is no specific limitation on the number of infrared lamps 401. The more infrared lamps 401 are set, the better the heating effect on the surface of the sample 5 to be processed, and the larger the area that the infrared lamp group 4 can cover for irradiation and heating, thereby improving the uniformity of the surface coverage of a large area of ​​the sample 5 to be processed.

[0043] like Figure 3 and Figure 7 As shown, specifically, in this embodiment, the cavity 1 is provided with one or more first through holes 102, and the first through holes 102 are used to penetrate the temperature measuring component, and the temperature measuring component is used to measure the temperature of the surface of the sample 5 to be processed. The temperature measuring component passes through the first through hole 102 and is placed close to the sample 5 to be processed in the cavity 1, and measures the temperature of the surface of the sample 5 to be processed to ensure that the heating temperature during the process meets the requirements. Among them, the temperature measuring component can be a thermocouple, a thermistor or other components with a temperature measurement function, and the temperature measuring component is not specifically limited here. Exemplarily, the first through hole 102 can be provided with 1, 2, 5, etc., and the number of the first through holes 102 is not specifically limited here. The more the number of the first through holes 102 is set, the more the number of temperature measuring components that can be placed in the chamber, and the more sensitive and accurate the temperature measurement of the surface of the sample 5 to be processed is, ensuring that the heating temperature during the process in the chamber meets the requirements.

[0044] like Figure 7As shown, specifically, in this embodiment, the cavity 1 is provided with a second through hole 103 and a third through hole 104, the second through hole 103 is used to communicate with the mechanical pump 6, and the third through hole 104 is used to communicate with the molecular pump 7. Wherein, flanges are provided at the second through hole 103 and the third through hole 104 on the cavity 1, one end of one flange is connected and fixed to the second through hole 103, and the other end of the flange is communicated with the mechanical pump 6, that is, the second through hole 103 is communicated with the mechanical pump 6 through the flange; one end of the other flange is connected and fixed to the third through hole 104, and the other end of the flange is communicated with the molecular pump 7, that is, the third through hole 104 is communicated with the molecular pump 7 through the flange. Exemplarily, the flange can be a CF flange or other flanges that can work normally in a vacuum environment, and the flange is not specifically limited here. The CF flange has a high vacuum degree, good high temperature resistance and corrosion resistance, and is easy to clean and maintain, which can ensure the sealing inside the deposition chamber for EUV reflective film and reduce the use and maintenance cost of the deposition chamber for EUV reflective film.

[0045] Furthermore, in the present embodiment, the second through hole 103 and the third through hole 104 are respectively arranged on different side walls of the cavity 1, so that the mechanical pump 6 and the molecular pump 7 are placed at a farther distance, which is convenient for placement and installation. Moreover, the cavity 1 can be vacuumed in different areas at the same time by being arranged on different side walls, which increases the coverage angle of the mechanical pump 6 and the molecular pump 7 during vacuum operation, improves the efficiency of vacuuming the cavity 1, and saves working time.

[0046] Specifically, in this embodiment, the length of the infrared lamp 401 is 50cm to 90cm; the sample stage 2 is a circular platform surface, and the diameter of the circular platform surface is 67cm to 75cm. Exemplarily, the length of the infrared lamp 401 can be 50cm, 65cm, 78cm, 80cm, 90cm, etc., and the length of the infrared lamp 401 is not specifically limited here. The longer the length of the infrared lamp 401, the greater the width of the infrared lamp group 4 formed by the parallel arrangement, and the larger the area of ​​heating radiation, ensuring that the heating temperature during the process in the chamber meets the requirements and improving the uniformity of the coating on the surface of the sample 5 to be processed. Among them, the sample stage 2 is a circular platform surface or a platform surface of other shapes, and the shape of the sample stage 2 is not specifically limited here. Exemplarily, the diameter of the circular platform surface can be 67 cm, 70 cm, 71 cm, 74 cm, 75 cm, etc. There is no specific limitation on the diameter of the circular platform surface. The larger the diameter of the circular platform surface, the larger the size of the sample 5 to be processed that can be carried, thereby improving the bearing capacity and accommodating capacity of the cavity 1 for large-area samples 5 to be processed.

[0047] like Figure 7As shown, specifically, in this embodiment, a fourth through hole 108 is further provided at the bottom of the cavity 1, and the fourth through hole 108 is used to communicate with the cooling gas interface. Among them, the fourth through hole 108 is provided at the bottom area of ​​the sample stage 2, and the fourth through hole cools the sample stage 2 and the side of the sample 5 to be processed away from the infrared lamp group 4 by passing the cooling gas into the bottom area of ​​the sample stage 2, thereby reducing the temperature of the sample stage 2 and the side of the sample 5 to be processed away from the infrared lamp group 4 during high-temperature operation, and ensuring the normal operation of the deposition chamber for EUV reflective film when the process is carried out at high temperature. Exemplarily, the fourth through hole 108 can be provided with 1, 2, 4, etc., and the number of the fourth through holes 108 is not specifically limited here. The more the number of the fourth through holes 108 is provided, the more obvious the cooling effect on the sample stage 2 and the sample 5 to be processed is, and the normal operation of the deposition chamber for EUV reflective film when the process is carried out at high temperature can be ensured.

[0048] like Figure 4 As shown, further, in this embodiment, a fifth through hole 109 is provided at the bottom of the cavity 1, and the fifth through hole 109 is used to fix the sample stage 2. The sample stage 2 and the cavity 1 can be connected by threads or other fixed connection methods, and the connection method between the sample stage 2 and the cavity 1 is not specifically limited here. The sample stage 2 and the cavity 1 are connected by threads, which is convenient for installation and disassembly, and ensures the stability of the placement position of the sample stage 2. Exemplarily, the fifth through hole 109 can be provided with 1, 2, 4, 8, etc., and the number of the fifth through holes 109 is not specifically limited here. The more the number of the fifth through holes 109 is, the more connection and fixing points between the cavity 1 and the sample stage 2, the more stable the placement of the sample stage 2, and the risk of shaking of the sample stage 2 is reduced.

[0049] like Figure 1 As shown, specifically, in this embodiment, the cavity 1 is a cubic structure. Exemplarily, the cavity 1 can also be a cylindrical structure or other structures, and the shape structure of the cavity 1 is not specifically limited here. The outer wall surface of the cubic structure is flat, which is convenient for processing multiple through holes on the wall surface of the cavity 1, and it is convenient for operators to install other components on the cavity 1, thereby improving the installation efficiency of the thin film deposition equipment and the stability of the installation structure.

[0050] like Figure 7As shown, specifically, in this embodiment, the side wall of the cavity 1 is provided with an air inlet group 105 and an air outlet group 106, the air inlet group 105 is used to communicate with the air inlet uniformizing device 8, and the air outlet group 106 is used to communicate with the exhaust uniformizing device. The deposition source and the gas are both passed into the air inlet uniformizing device 8, and the air inlet uniformizing device 8 injects the deposition source and the gas into the cavity 1 through the air inlet group 105, and the deposition source and the gas react in the cavity 1. After a thin film deposition is formed on the surface of the sample 5 to be processed, the remaining deposition source and gas flow to the exhaust uniformizing device through the air outlet group 106, and are discharged by the exhaust uniformizing device. This is repeated many times to complete the deposition of the thin film on the surface of the sample 5 to be processed. Among them, the air inlet group 105 and the air outlet group 106 are both provided with a plurality of through holes. The more through holes are provided, the higher the coverage uniformity of the deposited film after the reaction in the cavity 1.

[0051] like Figure 7 As shown, specifically, in this embodiment, the inlet hole group 105 and the outlet hole group 106 are respectively arranged on different side walls of the chamber 1, and the inlet hole group 105 is arranged at a distance of 18 cm to 22 cm from the bottom of the chamber 1; the outlet hole group 106 is arranged at a distance of 15 cm to 18 cm from the bottom of the chamber 1. The inlet hole group 105 and the outlet hole group 106 are respectively arranged on different side walls of the chamber 1, which prolongs the time that the deposition source and the gas stay in the chamber 1 after the reaction. For example, when the air inlet group 105 is set at 18 cm from the bottom of the cavity 1, the air outlet group 106 can be set at 15 cm, 16 cm or 17 cm from the bottom of the cavity 1; when the air inlet group 105 is set at 20 cm from the bottom of the cavity 1, the air outlet group 106 can be set at 15 cm, 16 cm, 17 cm or 18 cm from the bottom of the cavity 1; when the air inlet group 105 is set at 22 cm from the bottom of the cavity 1, the air outlet group 106 can be set at 15 cm, 16 cm, 17 cm or 18 cm from the bottom of the cavity 1. Group 106 can be set at a distance of 15 cm, 16 cm, 17 cm or 18 cm from the bottom of the cavity 1. There is no specific limitation on the setting positions of the air inlet hole group 105 and the air outlet hole group. The average distribution height of the air inlet hole group 105 is higher than the average distribution height of the air outlet hole group 106, so that after the deposition source and the gas react in the cavity 1, they can be smoothly discharged from the air outlet hole group 106 on the side wall with a lower height due to the influence of gravity, thereby ensuring the uniformity of the surface coverage of the sample 5 to be processed.

[0052] like Figure 1 , Figure 2 and Figure 6As shown, specifically, in this embodiment, a support rod 107 is also included, and the two ends of the support rod 107 are respectively arranged on the top cover 3 and the cavity 1, the top cover 3 is rotatably connected to the cavity 1, and the support rod 107 is used to support the top cover 3 that is flipped open relative to the cavity 1. Exemplarily, the support rod 107 can be a gas support rod, a manual support rod, a hydraulic support rod or other support rods 107 with telescopic and supporting functions, and the support rod 107 is not specifically limited here. Both the hydraulic support rod and the gas support rod can be automatically lifted, and have the functions of shock absorption and buffering, reducing the wear between the top cover 3 and the cavity 1; the manual support rod has low cost, is easy to install, and is convenient for maintenance, reducing the production and manufacturing cost of the deposition chamber for EUV reflective film.

[0053] like Figure 1 As shown, specifically, in this embodiment, the outer wall of the chamber 1 is provided with a plurality of weight-reducing holes 110, which are used to reduce the weight of the deposition chamber for EUV reflective film itself, and reduce the pressure of the deposition chamber for EUV reflective film on the experimental table. The more weight-reducing holes 110 are provided, the lighter the weight of the deposition chamber for EUV reflective film itself is, and it is convenient to place the deposition chamber for EUV reflective film on the experimental table for work.

[0054] At the same time, the present invention provides a thin film deposition equipment, including a mechanical pump 6, a molecular pump 7, an air intake and uniform gas device 8, an exhaust and uniform gas device and a cavity 1. The mechanical pump 6 and the molecular pump 7 are both connected to the cavity 1. The mechanical pump 6 and the molecular pump 7 are both used to evacuate the cavity 1 to a vacuum environment. The air intake and uniform gas device 8 and the exhaust and uniform gas device are both connected to the cavity 1. The air intake and uniform gas device 8 is used to pass the deposition source into the cavity 1. The exhaust and uniform gas device is used to discharge the deposition source. The chamber is any one of the above-mentioned deposition chambers for EUV reflective film. When performing the thin film deposition process, the operator places the sample 5 to be processed into the deposition chamber for EUV reflective film. First, the vacuum environment inside the deposition chamber for EUV reflective film is continuously maintained by the mechanical pump 6 and the molecular pump 7. Then, the deposition source and gas required for the process are introduced into the air intake and exhaust system, and injected into the deposition chamber for EUV reflective film by the air intake and exhaust system and react in the chamber to perform thin film deposition. The deposition chamber for EUV reflective film performs multiple annealing treatments on the thin film on the surface of the sample 5 to be processed, and the reacted source and gas are discharged through the exhaust uniformization device. The deposition chamber for EUV reflective film improves the uniformity of the thin film covering the surface of the sample when processing large-area samples.

[0055] Since the thin film deposition equipment adopts the deposition chamber for EUV reflective film in the present application, it needs to be in a high-temperature environment when the sample 5 to be processed is processed, and the structure of the chamber itself cannot withstand high temperature. Therefore, the deposition chamber for EUV reflective film only heats the carrying surface area of ​​the sample table 2 through the infrared lamp group 4 to ensure that the heating temperature in the area covered by the infrared lamp group 4 is about 800°C, and completes the thin film deposition processing on the surface of the sample 5 to be processed by repeatedly starting and stopping the infrared lamp 401, thereby improving the large-area thin film deposition on the surface of the sample 5 to be processed.

[0056] In some embodiments, when the thin film deposition equipment performs a thin film deposition process, a silicon-molybdenum stacked film is used, and the required molybdenum source and hydrogen are introduced into the air intake uniformization device 8 together. After the two enter the cavity 1, they react to form a molybdenum layer on the surface of the sample 5 to be processed, and then argon is purged. The reacted gas and source are discharged through the exhaust uniformization device; then the required silicon source and oxygen are introduced into the air intake uniformization device 8 together. After the two enter the cavity 1, they react to form a silicon layer on the surface of the sample 5 to be processed, and then argon is purged. The infrared lamp group 4 anneals the surface of the sample 5 to be processed, and then the infrared lamp group 4 is turned off, and the reacted gas and source are discharged through the exhaust uniformization device; this is repeated many times until the process requirements are met, and a reflective film suitable for EUV is obtained after the reaction is completed.

[0057] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in a suitable manner in any one or more embodiments or examples.

[0058] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A deposition chamber for EUV reflective film, characterized in that: include: The cavity is provided with an injection port, and the injection port is used to place the sample to be processed into the cavity; A sample stage, arranged at the bottom of the cavity, and used for placing a sample to be processed; A top cover, arranged on the top of the cavity; An infrared lamp group is arranged on the top cover, the infrared lamp group includes a plurality of infrared lamps arranged in parallel, the projection area of ​​the infrared lamp group on the sample stage covers the bearing surface of the sample stage, and the infrared lamp group is used to heat the area where the bearing surface of the sample stage is located.

2. The deposition chamber for EUV reflective film according to claim 1, characterized in that: The distance between the carrying surface of the sample stage and the plane where the infrared lamp group is located is 1.2 to 1.8 times the distance between two adjacent infrared lamps; The distance between two adjacent infrared lamps is 5 cm to 15 cm.

3. The deposition chamber for EUV reflective film according to claim 1, characterized in that: The cavity is provided with one or more first through holes, and the first through holes are used to penetrate a temperature measuring component, and the temperature measuring component is used to measure the temperature of the surface of the sample to be processed.

4. The deposition chamber for EUV reflective film according to claim 1, characterized in that: The cavity is provided with a second through hole and a third through hole, the second through hole is used to communicate with the mechanical pump, and the third through hole is used to communicate with the molecular pump.

5. The deposition chamber for EUV reflective film according to claim 1, characterized in that: The length of the infrared lamp is 50cm to 90cm; The sample stage is a circular platform surface, and the diameter of the circular platform surface is 67 cm to 75 cm.

6. The deposition chamber for EUV reflective film according to claim 1, characterized in that: The cavity is a cubic structure.

7. The deposition chamber for EUV reflective film according to claim 6, characterized in that: The side wall of the cavity is provided with an air inlet hole group and an air outlet hole group, the air inlet hole group is used to communicate with the air intake and air homogenizing device, and the air outlet hole group is used to communicate with the air exhaust and air homogenizing device.

8. The deposition chamber for EUV reflective film according to claim 7, characterized in that: The air inlet group and the air outlet group are respectively arranged on different side walls of the cavity, and the air inlet group is arranged 18cm to 22cm away from the bottom of the cavity; the air outlet group is arranged 15cm to 18cm away from the bottom of the cavity.

9. The deposition chamber for EUV reflective film according to claim 1, characterized in that: It also includes a support rod, the two ends of which are respectively arranged on the top cover and the cavity, the top cover is rotatably connected to the cavity, and the support rod is used to support the top cover to be flipped open relative to the cavity.

10. A thin film deposition device, characterized in that: It includes a mechanical pump, a molecular pump, an air intake and uniform gas device, an exhaust and uniform gas device and a chamber, the mechanical pump and the molecular pump are both connected to the chamber, the mechanical pump and the molecular pump are both used to evacuate the chamber to a vacuum environment, the air intake and uniform gas device and the exhaust and uniform gas device are both connected to the chamber, the air intake and uniform gas device are used to pass a deposition source into the chamber, the exhaust and uniform gas device is used to discharge the deposition source, and the chamber is a deposition chamber for EUV reflective film as described in any one of claims 1 to 9.

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