Semiconductor surface processing method

Abstract

The invention discloses a semiconductor surface processing method, which comprises the steps that a semiconductor to be processed is placed on a workbench of a diamond ruling machine, the semiconductor is provided with a first surface and a second surface opposite to the first surface, the first surface is in contact with the workbench, and a diamond cutter is arranged on the diamond ruling machine; the diamond cutter is controlled to conduct first-direction lineation operation, second-direction lineation operation, third-direction lineation operation and fourth-direction lineation operation on the second surface, so that a first-direction radian, a second-direction radian, a third-direction radian and a fourth-direction radian of a protrusion are correspondingly formed on the first surface; wherein the first direction lineation line, the second direction lineation line, the third direction lineation line and the fourth direction lineation line intersect at the central symmetry point of the second surface. According to the invention, the processing purpose of forming arc deformation on the surface of the semiconductor can be achieved, and the processing precision and the processing efficiency are improved.

Description

Technical Field

[0001] The invention relates to the field of microelectronic technology, and in particular to a semiconductor surface processing method. Background Art

[0002] In the microelectronics industry, semiconductors often have a spherical or arc-shaped shape. In order to obtain this semiconductor shape, the usual processing method is to use a hemispherical grinding disc to make the semiconductor surface form a curved surface. However, the problem with this processing method is that the grinding disc has a high manufacturing cost, the grinding accuracy is not enough, and a true spherical surface cannot be formed. Another processing method is to use laser correction. Although the accuracy can be met, the processing efficiency is very low and cannot meet the needs of large-scale processing. Summary of the invention

[0003] The purpose of an embodiment of the present invention is to provide a method for processing the surface of a semiconductor, which can mark one surface of the semiconductor so that the semiconductor is deformed due to internal stress, thereby forming an arc surface on the other surface of the semiconductor, thereby achieving the processing purpose of forming an arc deformation on the surface of the semiconductor and improving the processing accuracy and processing efficiency.

[0004] In order to achieve the above object, an embodiment of the present invention provides a method for processing a semiconductor surface, comprising:

[0005] Placing a semiconductor to be processed on a workbench of a diamond scribing machine; wherein the semiconductor has a first surface and a second surface opposite to the first surface, the first surface is in contact with the workbench, and the diamond scribing machine is provided with a diamond knife;

[0006] Controlling the diamond knife to perform a scribing operation in a first direction on the second surface so as to form a convex arc in the first direction on the first surface;

[0007] Controlling the diamond knife to perform a scribing operation in a second direction on the second surface so as to form a convex arc in the second direction on the first surface;

[0008] Controlling the diamond knife to perform a scribing operation in the third direction on the second surface so as to form a raised arc in the third direction on the first surface;

[0009] Controlling the diamond knife to perform a scribing operation in a fourth direction on the second surface, so as to form a convex arc in the fourth direction on the first surface;

[0010] The first direction scribing line formed by the first direction scribing operation, the second direction scribing line formed by the second direction scribing operation, the third direction scribing line formed by the third direction scribing operation and the fourth direction scribing line formed by the fourth direction scribing operation intersect at the central symmetric point of the second surface.

[0011] Furthermore, the inclination angle of the diamond knife during the scribing operation is 40° to 45°.

[0012] Further, in a coordinate system established with the central symmetric point as the coordinate origin, the first direction line is a longitudinal line, the second direction line is a transverse line, the third direction line is a first oblique line, and the fourth direction line is a second oblique line.

[0013] Furthermore, the working parameters of the scribing operation in the first direction are: pneumatic pressure of 550-650 MPa, scribing depth of 0.15-0.20 mm, and scribing length of 1.0-1.2 mm.

[0014] Furthermore, the arc angle in the first direction is 10-30 nm.

[0015] Furthermore, the working parameters of the second direction scribing operation are: pneumatic air pressure of 115-150 MPa, scribing depth of 0.05-0.06 mm, and scribing length of 0.10-0.25 mm.

[0016] Furthermore, the arc of the second direction is 3-7 nm.

[0017] Furthermore, the working parameters of the scribing operation in the third direction are: pneumatic air pressure is 350-450 MPa, scribing depth is 0.15-0.20 mm, and scribing length is 0.45-0.50 mm.

[0018] Furthermore, the working parameters of the fourth direction scribing operation are: pneumatic air pressure is 350-450 MPa, scribing depth is 0.15-0.20 mm, and scribing length is 0.45-0.50 mm.

[0019] Furthermore, the curvature in the third direction is 4 to 16 nm, and the curvature in the fourth direction is 4 to 16 nm.

[0020] Compared with the prior art, an embodiment of the present invention provides a method for processing the surface of a semiconductor, wherein a semiconductor to be processed is first placed on a workbench of a diamond scribing machine, wherein the semiconductor has a first surface and a second surface opposite to the first surface, the first surface is in contact with the workbench, and a diamond knife is provided on the diamond scribing machine; then the diamond knife is controlled to perform a first-direction scribing operation on the second surface to form a raised first-direction curvature on the first surface, and the diamond knife is controlled to perform a second-direction scribing operation on the second surface to form a raised second-direction curvature on the first surface, and the diamond knife is controlled to perform a third-direction scribing operation on the second surface to form a raised third-direction curvature on the first surface, and the diamond knife is controlled to perform a fourth-direction scribing operation on the second surface to form a raised fourth-direction curvature on the first surface, wherein the first-direction scribing formed by the first-direction scribing operation, the second-direction scribing formed by the second-direction scribing operation, the third-direction scribing formed by the third-direction scribing operation, and the fourth-direction scribing formed by the fourth-direction scribing operation intersect at a central symmetric point of the second surface. By adopting the embodiment of the present invention, one surface of the semiconductor can be scribed so that the semiconductor is deformed due to internal stress, thereby forming an arc surface on the other surface of the semiconductor, thereby achieving the processing purpose of forming an arc deformation on the semiconductor surface and improving the processing accuracy and processing efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a flow chart of a preferred embodiment of a semiconductor surface processing method provided by the present invention;

[0022] Figure 2 It is a schematic diagram of a scribing operation on the back side of a semiconductor provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0023] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this technical field without creative work are within the scope of protection of the present invention.

[0024] The present invention provides a method for processing a semiconductor surface. Figure 1 FIG. 1 is a flow chart of a preferred embodiment of a semiconductor surface processing method provided by the present invention, wherein the method comprises steps S11 to S15:

[0025] Step S11, placing a semiconductor to be processed on a workbench of a diamond scribing machine; wherein the semiconductor has a first surface and a second surface opposite to the first surface, the first surface is in contact with the workbench, and the diamond scribing machine is provided with a diamond knife;

[0026] Step S12, controlling the diamond knife to perform a scribing operation in a first direction on the second surface, so as to form a convex arc in the first direction on the first surface;

[0027] Step S13, controlling the diamond knife to perform a scribing operation in a second direction on the second surface, so as to form a convex arc in the second direction on the first surface;

[0028] Step S14, controlling the diamond knife to perform a scribing operation in the third direction on the second surface, so as to form a raised arc in the third direction on the first surface;

[0029] Step S15, controlling the diamond knife to perform a scribing operation in a fourth direction on the second surface, so as to form a convex arc in the fourth direction on the first surface.

[0030] Among them, the first direction scribing line formed by the first direction scribing operation, the second direction scribing line formed by the second direction scribing operation, the third direction scribing line formed by the third direction scribing operation and the fourth direction scribing line formed by the fourth direction scribing operation intersect at the central symmetric point of the second surface.

[0031] In a specific implementation, first, a semiconductor to be processed has a first surface and a second surface opposite to the first surface, and the semiconductor to be processed is placed on a workbench of a diamond scribing machine in a manner that the first surface faces downward and the second surface faces upward. At this time, the first surface of the semiconductor is in contact with the surface of the workbench, and a diamond knife is also provided on the diamond scribing machine; then, the diamond knife is controlled to perform a first-direction scribing operation on the second surface of the semiconductor, so that the first surface of the semiconductor forms a convex first-direction curvature due to force; then, the diamond knife is controlled to perform a second-direction scribing operation on the second surface of the semiconductor, so that the first surface of the semiconductor forms a convex second-direction curvature due to force; then, the diamond knife is controlled to perform a third-direction scribing operation on the second surface of the semiconductor, so that the first surface of the semiconductor forms a convex third-direction curvature due to force; finally, the diamond knife is controlled to perform a fourth-direction scribing operation on the second surface of the semiconductor, so that the first surface of the semiconductor forms a convex fourth-direction curvature due to force.

[0032] It should be noted that the first direction scribing operation will form a first direction scribing line on the second surface of the semiconductor, the second direction scribing operation will form a second direction scribing line on the second surface of the semiconductor, the third direction scribing operation will form a third direction scribing line on the second surface of the semiconductor, and the fourth direction scribing operation will form a fourth direction scribing line on the second surface of the semiconductor. The first direction scribing line, the second direction scribing line, the third direction scribing line and the fourth direction scribing line are respectively in different directions, and the first direction scribing line, the second direction scribing line, the third direction scribing line and the fourth direction scribing line intersect at the central symmetric point of the second surface of the semiconductor.

[0033] It can be understood that based on the characteristics of the semiconductor itself, after the scribing operation is performed on the second surface of the semiconductor, the first surface of the semiconductor will produce an arc-shaped deformation due to the action of internal stress. Therefore, by placing the first surface of the semiconductor face down on the workbench and performing scribing operations in four directions on the second surface of the semiconductor, the first surface of the semiconductor can form a certain curvature due to the force. After the scribing operations in the four directions are completed, a circular arc surface can be formed on the first surface of the semiconductor.

[0034] It should be noted that the first surface can be the front side or the back side of the semiconductor, and correspondingly, the second surface can be the back side or the front side of the semiconductor. If the embodiment of the present invention is applied to a scenario where a circular arc surface needs to be formed on the front side of the semiconductor, the first surface is the front side of the semiconductor and the second surface is the back side of the semiconductor. If the embodiment of the present invention is applied to a scenario where a circular arc surface needs to be formed on the back side of the semiconductor, the first surface is the back side of the semiconductor and the second surface is the front side of the semiconductor.

[0035] In another preferred embodiment, the inclination angle of the diamond knife during the scribing operation is 40° to 45°.

[0036] Specifically, in combination with the above embodiments, when controlling the diamond knife to perform first direction scribing operation, second direction scribing operation, third direction scribing operation, and fourth direction scribing operation on the second surface of the semiconductor, the diamond knife performs the scribing operation at an inclined angle of 40° to 45°.

[0037] Exemplarily, the inclination angle of the diamond knife may be 40°, 41°, 42°, 43°, 44° or 45°, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0038] In another preferred embodiment, in a coordinate system established with the central symmetric point as the coordinate origin, the first direction line is a longitudinal line, the second direction line is a transverse line, the third direction line is a first oblique line, and the fourth direction line is a second oblique line.

[0039] Specifically, in combination with the above embodiments, for the specific directions of the first direction lines, the second direction lines, the third direction lines and the fourth direction lines, if a coordinate system is established with the central symmetric point of the second surface of the semiconductor as the coordinate origin, then, in this coordinate system, the first direction lines are longitudinal lines, the second direction lines are transverse lines, that is, the first direction lines and the second direction lines are perpendicular to each other, the third direction lines are first oblique lines, and the fourth direction lines are second oblique lines, that is, the third direction lines and the fourth direction lines are oblique lines in two different directions.

[0040] Combination Figure 2 As shown, it is a schematic diagram of a scribing operation on the back side of a semiconductor provided by an embodiment of the present invention. Assuming that the second surface of the semiconductor is the back side of the semiconductor, and the outline of the back side of the semiconductor is a rectangle, a plane rectangular coordinate system is established with the central symmetric point of the back side of the semiconductor as the coordinate origin O, the direction parallel to the long side of the semiconductor as the X-axis, and the direction parallel to the wide side of the semiconductor as the Y-axis. In the plane rectangular coordinate system, the first direction scribing operation is a longitudinal scribing operation, that is, a scribing operation along the direction of the Y-axis, the second direction scribing operation is a transverse scribing operation, that is, a scribing operation along the direction of the X-axis, the third direction scribing operation is a first oblique scribing operation, that is, a scribing operation along the direction of one diagonal line of the rectangle, and the fourth direction scribing operation is a second oblique scribing operation, that is, a scribing operation along the direction of another diagonal line of the rectangle, and the first direction scribing operation, the second direction scribing operation, the third direction scribing operation and the fourth direction scribing operation intersect at the coordinate origin O.

[0041] It can be understood that the embodiments of the present invention are preferably applicable to scenarios where the surface profile of the semiconductor is rectangular, and may also be applicable to scenarios where the surface profile of the semiconductor is circular or other shapes. If the embodiments of the present invention are applied to scenarios where the surface profile of the semiconductor is circular or other shapes, the first direction lines and the second direction lines are still perpendicular to each other, and the two different directions of the third direction lines and the fourth direction lines can be set according to actual needs, and the embodiments of the present invention are not specifically limited.

[0042] In yet another preferred embodiment, the working parameters of the scribing operation in the first direction are: pneumatic pressure of 550-650 MPa, scribing depth of 0.15-0.20 mm, and scribing length of 1.0-1.2 mm.

[0043] As a preferred solution, the arc angle in the first direction is 10-30 nm.

[0044] Specifically, in combination with the above embodiment, the diamond scribing machine also has a pneumatic system. When controlling the diamond knife to perform a first direction scribing operation on the second surface of the semiconductor, the working parameters corresponding to the first direction scribing operation include: the pneumatic air pressure of the pneumatic system is adjusted to 550MPa~650MPa, the scribing depth is 0.15mm~0.20mm, and the scribing length is 1.0mm~1.2mm. Accordingly, the size of the first direction arc formed on the first surface of the semiconductor is 20±10nm, that is, 10nm~30nm.

[0045] Exemplarily, the pneumatic pressure of the first direction marking operation can be 550MPa, 560MPa, 570MPa, 580MPa, 590MPa, 600MPa, 610MPa, 620MPa, 630MPa, 640MPa or 650MPa, and can also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0046] Exemplarily, the scribing depth of the scribing operation in the first direction may be 0.15 mm, 0.16 mm, 0.17 mm, 0.18 mm, 0.19 mm or 0.20 mm, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0047] Exemplarily, the length of the scribing operation in the first direction may be 1.0 mm, 1.1 mm or 1.2 mm, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0048] Exemplarily, the value of the curvature in the first direction can be 10nm, 11nm, 12nm, 13nm, 14nm, 15nm, 16nm, 17nm, 18nm, 19nm, 20nm, 21nm, 22nm, 23nm, 24nm, 25nm, 26nm, 27nm, 28nm, 29nm or 30nm, and can also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0049] In yet another preferred embodiment, the working parameters of the scribing operation in the second direction are: pneumatic pressure of 115-150 MPa, scribing depth of 0.05-0.06 mm, and scribing length of 0.10-0.25 mm.

[0050] As a preferred solution, the arc of the second direction is 3-7 nm.

[0051] Specifically, in combination with the above embodiment, the diamond scribing machine also has a pneumatic system. When controlling the diamond knife to perform a second direction scribing operation on the second surface of the semiconductor, the working parameters corresponding to the second direction scribing operation include: the pneumatic air pressure of the pneumatic system is adjusted to 115MPa~150MPa, the scribing depth is 0.05mm~0.06mm, and the scribing length is 0.10mm~0.25mm. Accordingly, the size of the second direction arc formed on the first surface of the semiconductor is 5±2nm, that is, 3nm~7nm.

[0052] Exemplarily, the pneumatic pressure of the second direction marking operation may be 115 MPa, 120 MPa, 125 MPa, 130 MPa, 135 MPa, 140 MPa, 145 MPa or 150 MPa, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0053] Exemplarily, the scribing depth of the scribing operation in the second direction may be 0.05 mm or 0.06 mm, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0054] Exemplarily, the length of the scribing operation in the second direction may be 0.10 mm, 0.15 mm, 0.20 mm or 0.25 mm, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0055] Exemplarily, the value of the arc in the second direction may be 3 nm, 4 nm, 5 nm, 6 nm or 7 nm, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0056] In yet another preferred embodiment, the working parameters of the scribing operation in the third direction are: pneumatic pressure of 350-450 MPa, scribing depth of 0.15-0.20 mm, and scribing length of 0.45-0.50 mm.

[0057] As a preferred solution, the curvature in the third direction is 4-16 nm.

[0058] Specifically, in combination with the above embodiment, the diamond scribing machine also has a pneumatic system. When controlling the diamond knife to perform a third-direction scribing operation on the second surface of the semiconductor, the working parameters corresponding to the third-direction scribing operation include: the pneumatic air pressure of the pneumatic system is adjusted to 350MPa~450MPa, the scribing depth is 0.15mm~0.20mm, and the scribing length is 0.45mm~0.50mm. Accordingly, the size of the third-direction arc formed on the first surface of the semiconductor is 10±6nm, that is, 4nm~16nm.

[0059] Exemplarily, the pneumatic air pressure of the third direction marking operation can be 350MPa, 360MPa, 370MPa, 380MPa, 390MPa, 400MPa, 410MPa, 420MPa, 430MPa, 440MPa or 450MPa, and can also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0060] Exemplarily, the value of the scribing depth of the scribing operation in the third direction may be 0.15 mm, 0.16 mm, 0.17 mm, 0.18 mm, 0.19 mm or 0.20 mm, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0061] Exemplarily, the value of the scribing length of the scribing operation in the third direction may be 0.45 mm, 0.46 mm, 0.47 mm, 0.48 mm, 0.49 mm or 0.50 mm, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0062] Exemplarily, the value of the curvature in the third direction may be 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 14nm, 15nm or 16nm, and may also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0063] In another preferred embodiment, the working parameters of the fourth direction scribing operation are: pneumatic pressure is 350-450 MPa, scribing depth is 0.15-0.20 mm, and scribing length is 0.45-0.50 mm.

[0064] As a preferred solution, the arc angle in the fourth direction is 4-16 nm.

[0065] Specifically, in combination with the above embodiments, the diamond scribing machine also has a pneumatic system. When controlling the diamond knife to perform a fourth direction scribing operation on the second surface of the semiconductor, the working parameters corresponding to the fourth direction scribing operation include: the pneumatic air pressure of the pneumatic system is adjusted to 350MPa~450MPa, the scribing depth is 0.15mm~0.20mm, and the scribing length is 0.45mm~0.50mm. Accordingly, the size of the fourth direction arc formed on the first surface of the semiconductor is 10±6nm, that is, 4nm~16nm.

[0066] Exemplarily, the pneumatic pressure of the fourth direction marking operation can be 350MPa, 360MPa, 370MPa, 380MPa, 390MPa, 400MPa, 410MPa, 420MPa, 430MPa, 440MPa or 450MPa, and can also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0067] Exemplarily, the scribing depth of the scribing operation in the fourth direction may be 0.15 mm, 0.16 mm, 0.17 mm, 0.18 mm, 0.19 mm or 0.20 mm, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0068] Exemplarily, the length of the marking line in the fourth direction marking operation may be 0.45 mm, 0.46 mm, 0.47 mm, 0.48 mm, 0.49 mm or 0.50 mm, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0069] Exemplarily, the value of the curvature in the fourth direction may be 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 14nm, 15nm or 16nm, and may also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0070] Understandable, combined Figure 2 As shown, since the third-direction marking operation and the fourth-direction marking operation are respectively marking operations in the two diagonal directions of the rectangle, the working parameters corresponding to the third-direction marking operation and the working parameters corresponding to the fourth-direction marking operation can be set to the same parameters, and accordingly, the magnitude of the third-direction curvature and the fourth-direction curvature formed on the first surface of the semiconductor are also the same.

[0071] It should be noted that the pneumatic pressure, the marking depth and the marking length will affect the size of the curvature formed on the first surface of the semiconductor. For example, the greater the marking depth of the marking operation performed on the second surface of the semiconductor, the greater the curvature formed on the first surface of the semiconductor. Therefore, the pneumatic pressure, marking depth and marking length corresponding to the first direction marking operation, the second direction marking operation, the third direction marking operation and the fourth direction marking operation can be set according to the actual need to form the curvature on the surface of the semiconductor, and the embodiment of the present invention does not make specific limitations.

[0072] In combination with all the above embodiments, the implementation process of the present scheme is described below through the first specific embodiment, including: (1) placing the semiconductor to be processed on the workbench of the diamond scribing machine with the first surface facing downward and the second surface facing upward; (2) controlling the diamond knife to perform a longitudinal scribing operation on the second surface of the semiconductor, and the pneumatic pressure of the longitudinal scribing operation is 550MPa, the scribing depth is 0.15mm, and the scribing length is 1.0mm, so that the first surface of the semiconductor forms a convex first direction curvature of 10nm due to the force; (3) controlling the diamond knife to perform a transverse scribing operation on the second surface of the semiconductor, and the pneumatic pressure of the transverse scribing operation is 115MPa, the scribing depth is 0.05mm, and the scribing length is 0.10mm, so that the first surface of the semiconductor forms a convex second direction curvature of 3nm due to the force; (4) controlling the diamond knife to perform a first oblique scribing operation on the second surface of the semiconductor, and the first oblique scribing operation The pneumatic pressure is 350 MPa, the scribing depth is 0.15 mm, and the scribing length is 0.45 mm, so that the first surface of the semiconductor forms a 4 nm raised arc in the third direction due to the force; (5) controlling the diamond knife to perform a second oblique scribing operation on the second surface of the semiconductor, and the pneumatic pressure of the second oblique scribing operation is 350 MPa, the scribing depth is 0.15 mm, and the scribing length is 0.45 mm, so that the first surface of the semiconductor forms a 4 nm raised arc in the fourth direction due to the force; wherein the inclination angle of the diamond knife during the scribing operation is 40°, and the longitudinal scribing line formed on the second surface of the semiconductor by the longitudinal scribing operation, the transverse scribing line formed on the second surface of the semiconductor by the transverse scribing operation, the first oblique scribing line formed on the second surface of the semiconductor by the first oblique scribing operation, and the second oblique scribing line formed on the second surface of the semiconductor by the second oblique scribing operation intersect at the central symmetric point of the second surface of the semiconductor.

[0073] In combination with all the above embodiments, the implementation process of the present scheme is described below through a second specific embodiment, including: (1) placing the semiconductor to be processed on the workbench of the diamond scribing machine with the first surface facing downward and the second surface facing upward; (2) controlling the diamond knife to perform a longitudinal scribing operation on the second surface of the semiconductor, and the pneumatic pressure of the longitudinal scribing operation is 600 MPa, the scribing depth is 0.17 mm, and the scribing length is 1.1 mm, so that the first surface of the semiconductor forms a 20 nm raised first direction arc due to the force; (3) controlling the diamond knife to perform a transverse scribing operation on the second surface of the semiconductor, and the pneumatic pressure of the transverse scribing operation is 135 MPa, the scribing depth is 0.05 mm, and the scribing length is 0.20 mm, so that the first surface of the semiconductor forms a 5 nm raised second direction arc due to the force; (4) controlling the diamond knife to perform a first oblique scribing operation on the second surface of the semiconductor, and the first oblique scribing operation is The pneumatic pressure is 400 MPa, the scribing depth is 0.17 mm, and the scribing length is 0.48 mm, so that the first surface of the semiconductor forms a convex curvature of 10 nm in the third direction due to the force; (5) controlling the diamond knife to perform a second oblique scribing operation on the second surface of the semiconductor, and the pneumatic pressure of the second oblique scribing operation is 400 MPa, the scribing depth is 0.17 mm, and the scribing length is 0.48 mm, so that the first surface of the semiconductor forms a convex curvature of 10 nm in the fourth direction due to the force; wherein the inclination angle of the diamond knife during the scribing operation is 42°, and the longitudinal scribing line formed on the second surface of the semiconductor by the longitudinal scribing operation, the transverse scribing line formed on the second surface of the semiconductor by the transverse scribing operation, the first oblique scribing line formed on the second surface of the semiconductor by the first oblique scribing operation, and the second oblique scribing line formed on the second surface of the semiconductor by the second oblique scribing operation intersect at the central symmetric point of the second surface of the semiconductor.

[0074] In combination with all the above embodiments, the implementation process of the present scheme is described below through the third specific embodiment, including: (1) placing the semiconductor to be processed on the workbench of the diamond scribing machine with the first surface facing downward and the second surface facing upward; (2) controlling the diamond knife to perform a longitudinal scribing operation on the second surface of the semiconductor, and the pneumatic pressure of the longitudinal scribing operation is 650MPa, the scribing depth is 0.20mm, and the scribing length is 1.2mm, so that the first surface of the semiconductor forms a 30nm first direction arc due to the force; (3) controlling the diamond knife to perform a transverse scribing operation on the second surface of the semiconductor, and the pneumatic pressure of the transverse scribing operation is 150MPa, the scribing depth is 0.06mm, and the scribing length is 0.25mm, so that the first surface of the semiconductor forms a 7nm second direction arc due to the force; (4) controlling the diamond knife to perform a first oblique scribing operation on the second surface of the semiconductor, and the first oblique scribing operation is The pneumatic pressure is 450 MPa, the scribing depth is 0.20 mm, and the scribing length is 0.50 mm, so that the first surface of the semiconductor forms a 16 nm raised curvature in the third direction due to the force; (5) controlling the diamond knife to perform a second oblique scribing operation on the second surface of the semiconductor, and the pneumatic pressure of the second oblique scribing operation is 450 MPa, the scribing depth is 0.20 mm, and the scribing length is 0.50 mm, so that the first surface of the semiconductor forms a 16 nm raised curvature in the fourth direction due to the force; wherein the inclination angle of the diamond knife during the scribing operation is 45°, and the longitudinal scribing line formed on the second surface of the semiconductor by the longitudinal scribing operation, the transverse scribing line formed on the second surface of the semiconductor by the transverse scribing operation, the first oblique scribing line formed on the second surface of the semiconductor by the first oblique scribing operation, and the second oblique scribing line formed on the second surface of the semiconductor by the second oblique scribing operation intersect at the central symmetric point of the second surface of the semiconductor.

[0075] In summary, a semiconductor surface processing method provided by an embodiment of the present invention first places a semiconductor to be processed on a workbench of a diamond scribing machine, wherein the semiconductor has a first surface and a second surface opposite to the first surface, the first surface is in contact with the workbench, and a diamond knife is provided on the diamond scribing machine; then the diamond knife is controlled to perform a first-direction scribing operation on the second surface to form a raised first-direction curvature on the first surface, and the diamond knife is controlled to perform a second-direction scribing operation on the second surface to form a raised second-direction curvature on the first surface, and the diamond knife is controlled to perform a third-direction scribing operation on the second surface to form a raised third-direction curvature on the first surface, and the diamond knife is controlled to perform a fourth-direction scribing operation on the second surface to form a raised fourth-direction curvature on the first surface, wherein the first-direction scribing formed by the first-direction scribing operation, the second-direction scribing formed by the second-direction scribing operation, the third-direction scribing formed by the third-direction scribing operation, and the fourth-direction scribing formed by the fourth-direction scribing operation intersect at the central symmetric point of the second surface. By adopting the embodiment of the present invention, one surface of the semiconductor can be scribed so that the semiconductor is deformed due to internal stress, thereby forming an arc surface on the other surface of the semiconductor, thereby achieving the processing purpose of forming an arc deformation on the semiconductor surface and improving the processing accuracy and processing efficiency.

[0076] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A method for processing a semiconductor surface, characterized in that: include: Placing a semiconductor to be processed on a workbench of a diamond scribing machine; wherein the semiconductor has a first surface and a second surface opposite to the first surface, the first surface is in contact with the workbench, and the diamond scribing machine is provided with a diamond knife; Controlling the diamond knife to perform a scribing operation in a first direction on the second surface so as to form a convex arc in the first direction on the first surface; Controlling the diamond knife to perform a scribing operation in a second direction on the second surface so as to form a convex arc in the second direction on the first surface; Controlling the diamond knife to perform a scribing operation in the third direction on the second surface so as to form a raised arc in the third direction on the first surface; Controlling the diamond knife to perform a scribing operation in a fourth direction on the second surface, so as to form a convex arc in the fourth direction on the first surface; The first direction scribing line formed by the first direction scribing operation, the second direction scribing line formed by the second direction scribing operation, the third direction scribing line formed by the third direction scribing operation and the fourth direction scribing line formed by the fourth direction scribing operation intersect at the central symmetric point of the second surface.

2. The method for processing a semiconductor surface according to claim 1, wherein: The inclination angle of the diamond knife during the scribing operation is 40° to 45°.

3. The method for processing a semiconductor surface according to claim 1, wherein: In a coordinate system established with the central symmetric point as the coordinate origin, the first direction line is a longitudinal line, the second direction line is a transverse line, the third direction line is a first oblique line, and the fourth direction line is a second oblique line.

4. The method for processing a semiconductor surface according to claim 1, wherein: The working parameters of the first direction scribing operation are: pneumatic air pressure of 550-650 MPa, scribing depth of 0.15-0.20 mm, and scribing length of 1.0-1.2 mm.

5. The method for processing a semiconductor surface as claimed in claim 4, characterized in that: The arc angle in the first direction is 10-30 nm.

6. The method for processing a semiconductor surface according to claim 1, wherein: The working parameters of the second direction scribing operation are: pneumatic air pressure of 115-150 MPa, scribing depth of 0.05-0.06 mm, and scribing length of 0.10-0.25 mm.

7. The method for processing a semiconductor surface as claimed in claim 6, characterized in that: The arc of the second direction is 3-7 nm.

8. The method for processing a semiconductor surface as claimed in claim 1, characterized in that: The working parameters of the third direction marking operation are: pneumatic air pressure is 350-450 MPa, marking depth is 0.15-0.20 mm, and marking length is 0.45-0.50 mm.

9. The method for processing a semiconductor surface as claimed in claim 8, characterized in that: The working parameters of the fourth direction scribing operation are: pneumatic air pressure of 350-450 MPa, scribing depth of 0.15-0.20 mm, and scribing length of 0.45-0.50 mm.

10. The method for processing a semiconductor surface according to claim 9, characterized in that: The arc angle in the third direction is 4-16 nm, and the arc angle in the fourth direction is 4-16 nm.

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